阅读说明：本技术 一种脑电极器件的制备方法及脑电极器件 (Preparation method of brain electrode device and brain electrode device ) 是由 陶虎 周志涛 于 2021-09-13 设计创作，主要内容包括：本申请实施例所公开的一种脑电极器件的制备方法及脑电极器件,制备方法包括：对第一焊接区域进行植球处理,得到第一植球；第一植球的尺寸与第一待连接区域的尺寸匹配；将第一植球与第一焊接区域接触,使得转接板与脑电信号采集器件连接；对第二待连接区域进行植球处理,得到第二植球；第二植球的尺寸与第二待连接区域的尺寸匹配,且第二植球的熔点低于第一植球的熔点；将第二植球与第二焊接区域接触,使得转接板与柔性电路板连接,得到脑电极器件。基于本申请实施例可以在不损坏脑电极器件性能的前提下,实现千量级的脑电信号的连接。(The embodiment of the application discloses a preparation method of a brain electrode device and the brain electrode device, and the preparation method comprises the following steps: carrying out ball mounting treatment on the first welding area to obtain a first mounted ball; the size of the first planting ball is matched with that of the first area to be connected; contacting the first ball with the first welding area to connect the adapter plate with the electroencephalogram signal acquisition device; carrying out ball planting treatment on the second area to be connected to obtain second planting balls; the size of the second planting balls is matched with that of the second to-be-connected area, and the melting point of the second planting balls is lower than that of the first planting balls; and contacting the second planting ball with the second welding area, so that the adapter plate is connected with the flexible circuit board, and the brain electrode device is obtained. On the premise of not damaging the performance of a brain electrode device, thousands of orders of magnitude of brain electrical signals can be connected based on the embodiment of the application.)

1. The preparation method of the brain electrode device is characterized in that the brain electrode device comprises a brain electrical signal acquisition device, an adapter plate and a flexible circuit board, wherein the adapter plate comprises a first area to be connected and a second area to be connected, the brain electrical signal acquisition device comprises a first welding area, and the flexible circuit board comprises a second welding area;

the preparation method comprises the following steps:

carrying out ball planting treatment on the first welding area to obtain a first planted ball; the size of the first planting ball is matched with that of the first welding area;

contacting the first planting ball with the first area to be connected, so that the adapter plate is connected with the electroencephalogram signal acquisition device;

carrying out ball planting treatment on the second area to be connected to obtain second planted balls; the size of the second planting ball is matched with that of the second region to be connected, and the melting point of the second planting ball is lower than that of the first planting ball;

and contacting the second implanted ball with the second welding area, so that the adapter plate is connected with the flexible circuit board to obtain the brain electrode device.

2. The preparation method of claim 1, wherein the contacting the first ball-planting with the first area to be connected to connect the adapter plate with the electroencephalogram signal acquisition device comprises:

and reversely buckling the electroencephalogram signal acquisition device, and contacting the first implanted ball with the first area to be connected so that the adapter plate is connected with the electroencephalogram signal acquisition device.

3. The method for preparing a brain electrode device according to claim 1, wherein the step of contacting the second stud ball with the second soldering region to connect the interposer with the flexible circuit board to obtain a brain electrode device comprises:

and reversely buckling the adapter plate, and contacting the second implanted ball with the second welding area, so that the adapter plate is connected with the flexible circuit board to obtain the brain electrode device.

4. The method of claim 1, further comprising:

preparing the interposer, comprising:

obtaining a substrate; the substrate has a surface to be lithographed;

carrying out photoetching treatment on the substrate to divide the surface to be subjected to photoetching into a plurality of areas to be wired;

preparing a metal layer and a welding layer on the plurality of areas to be wired; the welding layer comprises a plurality of areas to be prepared and a plurality of areas to be connected, the areas to be prepared are connected with the metal layer, the areas to be prepared are connected with the areas to be connected, and the areas to be connected comprise the first areas to be connected and the second areas to be connected;

and preparing an insulating layer on the metal layer and the to-be-prepared area of the welding layer, so that the to-be-connected area is exposed to air, and obtaining the adapter plate.

5. The method according to claim 1, wherein the first solder balls are solder balls having a melting point of 217 ℃ and a model of SAC 305.

6. The method as claimed in claim 1, wherein the second solder balls are solder balls having a melting point of 138 ℃ and a model of Sn42Bi 58.

7. The method for preparing the solder ball according to claim 1, wherein the ball mounting process for the first soldering area to obtain the first ball mounting process comprises:

and carrying out ball planting treatment on the first welding area by utilizing laser ball planting to obtain the first ball planting.

8. The method of claim 4, wherein the substrate comprises Schottky glass and silicon wafer.

9. The method according to claim 4, wherein a material of the metal layer includes chromium, nickel, and gold.

10. A brain electrode device, characterized in that it is a device obtained based on the manufacturing method of any one of claims 1 to 9;

the brain electrode device includes: the device comprises an electroencephalogram signal acquisition device, an adapter plate and a flexible circuit board;

the adapter plate comprises a first area to be connected and a second area to be connected;

the electroencephalogram signal acquisition device comprises a first welding area;

the flexible circuit board comprises a second welding area;

the first region to be connected is connected with the first welding region, and the second region to be connected is connected with the second welding region.

Technical Field

The invention relates to the technical field of microelectronic packaging interconnection, in particular to a method for preparing a brain electrode device and the brain electrode device.

Background

With the development of brain science and technology, the acquisition of high-quality and high-density electroencephalogram signals becomes an indispensable condition for precisely reading brain science. In recent years, the number of electroencephalogram channels is developed from single digit to thousands of orders, because a mouse, a rat or a monkey is generally selected as an experimental object in the early development of an electroencephalogram device, and the back end circuit of the electroencephalogram device needs to be miniaturized, the requirement on connection between an electroencephalogram signal acquisition device and the back end circuit is strict, the high-channel connection needs to be realized, and meanwhile, the small volume needs to be achieved, namely, the increase of the number of channels and the reduction of the distance need to be considered. Fig. 1 is a first schematic diagram of a connection between a conventional electroencephalogram signal acquisition device and a back-end circuit, fig. 2 is a second schematic diagram of a connection between a conventional electroencephalogram signal acquisition device and a back-end circuit, and fig. 3 is a partial enlarged view of a in fig. 2. Fig. 4 is a schematic plan view of a conventional electroencephalograph, and fig. 5 is an enlarged view of a portion B of fig. 4. As shown in FIG. 5, the spacing between the solder holes in the back-end circuit has reached 250 μm, and the conventional printed circuit board has been unable to meet the connection requirements of the electroencephalogram signal acquisition device. This need is in keeping with the need for the development of microelectronic package interconnect technology, and in the lead of moore's law, the feature size of integrated circuits is gradually decreasing, the number of transistors is gradually increasing, and with the increasing number of pins, the requirements for package interconnect technology are gradually increasing.

Fig. 6 is a schematic structural diagram of a prior art electroencephalograph device, in which micro-wires insulated from each other can be used as a front-end electroencephalogram signal acquisition device, and a CMOS chip can be used as a back-end circuit. The grid of the CMOS chip is used as a bonding connection point of the micro-wire bundle, the extremely high integration level of the CMOS chip can be matched with the micron-scale distance between the micro-wire bundles, and the CMOS chip can be used for realizing signal connection and simultaneously carrying out subsequent processing of signals, such as amplification, filtering and the like. However, the brain electrode device needs to consume a large amount of manpower and financial resources to design and process a CMOS chip, and the CMOS chip is only applicable to a front-end brain electrical signal acquisition device of a micro-wire harness, is difficult to be applied to other brain electrical signal acquisition devices, and does not have universality.

Fig. 7 is a schematic structural diagram of another conventional electroencephalogram device in the prior art, in which a is an electroencephalogram signal acquisition device, b is a flexible connection cable made of polyimide, c is a printed circuit board, and the connection cable is used as a connection plate of the front-end electroencephalogram signal acquisition device and the printed circuit board, so that the problem that the printed circuit board cannot reach the high-density connection of the pressure welding point of the front-end electroencephalogram signal acquisition device can be solved, and great convenience can be provided for subsequent animal experiments. However, the number of the channels which can be connected out of a single flexible connecting cable is 256, if the requirements of thousands of brain electrode channels are required, a plurality of brain signal acquisition devices, a plurality of flexible connecting cables and a plurality of printed circuit boards are required to be assembled, and the assembly mode is low in integration level, large in size and heavy in weight, and can greatly affect the experiment.

Disclosure of Invention

The embodiment of the application provides a preparation method of a brain electrode device and the brain electrode device, which can be used for connecting a high-density brain signal acquisition device and an adapter plate with a flexible circuit board at a lower welding temperature, can ensure that the performance of the brain electrode device is not damaged, can improve the connection stability of the brain electrode device, and can realize the connection of thousand-magnitude brain electrode signals under the processing capacity of the flexible circuit board.

The embodiment of the application provides a preparation method of a brain electrode device, wherein the brain electrode device comprises a brain electrical signal acquisition device, an adapter plate and a flexible circuit board, the adapter plate comprises a first area to be connected and a second area to be connected, the brain electrical signal acquisition device comprises a first welding area, and the flexible circuit board comprises a second welding area;

the preparation method comprises the following steps:

carrying out ball mounting treatment on the first welding area to obtain a first mounted ball; the size of the first planting ball is matched with that of the first welding area;

contacting the first ball planting with a first area to be connected so that the adapter plate is connected with the electroencephalogram signal acquisition device;

carrying out ball planting treatment on the second area to be connected to obtain second planting balls; the size of the second planting balls is matched with that of the second to-be-connected area, and the melting point of the second planting balls is lower than that of the first planting balls;

and contacting the second planting ball with the second welding area, so that the adapter plate is connected with the flexible circuit board, and the brain electrode device is obtained.

Further, with first ball of planting and the first region contact of waiting to connect for the keysets is connected with the EEG signal acquisition device, includes:

and (3) reversely buckling the electroencephalogram signal acquisition device, and contacting the first ball planting with the first to-be-connected area to enable the adapter plate to be connected with the electroencephalogram signal acquisition device.

Further, a second ball-planting is contacted with the second welding area, so that the adapter plate is connected with the flexible circuit board, and the brain electrode device is obtained, and the brain electrode device comprises:

and the second implanted ball is contacted with the second welding area by reversely buckling the adapter plate, so that the adapter plate is connected with the flexible circuit board to obtain the brain electrode device.

Further, still include:

preparing an interposer, comprising:

obtaining a substrate; the substrate has a surface to be photoetched;

carrying out photoetching treatment on the substrate to divide the surface to be subjected to photoetching into a plurality of areas to be wired;

preparing a metal layer and a welding layer on a plurality of areas to be wired; the welding layer comprises a plurality of areas to be prepared and a plurality of areas to be connected, the areas to be prepared are connected with the metal layer, the areas to be prepared are connected with the areas to be connected, and the areas to be connected comprise a first area to be connected and a second area to be connected;

and preparing an insulating layer on the metal layer and the area to be prepared of the welding layer, so that the area to be connected is exposed to the air, and obtaining the adapter plate.

Further, the first solder balls are solder balls having a melting point of 217 ℃ and a model of SAC 305.

Furthermore, the second planting ball is a solder ball with the melting point of 138 ℃ and the model of Sn42Bi 58.

Further, the ball mounting processing is performed on the first welding area to obtain a first ball mounting, and the ball mounting processing method includes:

and carrying out ball planting treatment on the first welding area by utilizing laser ball planting to obtain a first ball planting.

Further, the substrate includes schottky glass and a silicon wafer.

Further, the material of the metal layer includes chromium, nickel, and gold.

Correspondingly, the embodiment of the application also provides a brain electrode device which is obtained based on any one of the preparation methods;

the brain electrode device includes: the device comprises an electroencephalogram signal acquisition device, an adapter plate and a flexible circuit board;

the adapter plate comprises a first area to be connected and a second area to be connected;

the electroencephalogram signal acquisition device comprises a first welding area;

the flexible circuit board comprises a second welding area;

the first area to be connected is connected with the first welding area, and the second area to be connected is connected with the second welding area.

The embodiment of the application has the following beneficial effects:

the brain electrode device comprises a brain electrical signal acquisition device, an adapter plate and a flexible circuit board, wherein the adapter plate comprises a first area to be connected and a second area to be connected, the brain electrical signal acquisition device comprises a first welding area, and the flexible circuit board comprises a second welding area. The preparation method comprises the following steps: carrying out ball mounting treatment on the first welding area to obtain a first mounted ball; the size of the first planting ball is matched with that of the first welding area; contacting the first ball with the first welding area to connect the adapter plate with the electroencephalogram signal acquisition device; carrying out ball planting treatment on the second area to be connected to obtain second planting balls; the size of the second planting balls is matched with that of the second to-be-connected area, and the melting point of the second planting balls is lower than that of the first planting balls; and contacting the second planting ball with the second welding area, so that the adapter plate is connected with the flexible circuit board, and the brain electrode device is obtained. Based on this application embodiment adopts laser balling technique and back-off welding technique, can be connected high-density brain electrical signal collection device, keysets and flexible circuit board under lower welding temperature, can guarantee that the performance of brain electrode device is not damaged, and can improve the connection stability of brain electrode device, can also realize the connection of the brain electrode signal of thousand orders of magnitude under flexible circuit board's processing ability in addition.

Drawings

In order to more clearly illustrate the technical solutions and advantages of the embodiments of the present application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a first schematic diagram of a connection between a conventional electroencephalogram signal acquisition device and a back-end circuit;

FIG. 2 is a schematic diagram of a connection between a conventional electroencephalogram signal acquisition device and a back-end circuit;

FIG. 3 is an enlarged view of a portion of FIG. 2;

fig. 4 is a schematic plan view of a prior art electroencephalograph device;

FIG. 5 is a partial enlarged view of B in FIG. 4;

fig. 6 is a schematic view showing the structure of a prior art electroencephalograph device;

fig. 7 is a schematic diagram of the structure of another prior art electroencephalograph device of the prior art;

FIG. 8 is a schematic flow chart of a method for manufacturing an electroencephalogram device according to an embodiment of the present application;

fig. 9 is a schematic view illustrating a method for manufacturing an electroencephalogram device according to an embodiment of the present application;

fig. 10 is a schematic flow chart illustrating a method for manufacturing an interposer according to an embodiment of the present disclosure;

fig. 11 is a schematic view illustrating a method for manufacturing an interposer according to an embodiment of the present disclosure;

fig. 12 is a first schematic structural diagram of an interposer provided in an embodiment of the present application;

fig. 13 is a first schematic structural diagram of an electroencephalograph device provided in an embodiment of the present application;

fig. 14 is a schematic structural diagram ii of an electroencephalograph according to an embodiment of the present application;

fig. 15 is a schematic structural diagram of a second interposer according to an embodiment of the present application.

Detailed Description

To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings. It should be apparent that the described embodiment is only one embodiment of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

An "embodiment" as referred to herein relates to a particular feature, structure, or characteristic that may be included in at least one implementation of the present application. In the description of the embodiments of the present application, it should be understood that the terms "upper", "lower", "top", "bottom", and the like refer to orientations or positional relationships based on those shown in the drawings, and are used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the device/system or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present application. The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in other sequences than described or illustrated herein. Furthermore, the terms "comprising" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions.

Next, a specific example of a method for manufacturing an electroencephalogram device according to the present application will be described, fig. 8 is a schematic flow chart of the method for manufacturing an electroencephalogram device according to the present application, and fig. 9 is a schematic view of the method for manufacturing an electroencephalogram device according to the present application. The present specification provides method steps as illustrated in the examples or flowcharts, but may include more or fewer steps based on routine or non-inventive labor. The sequence of steps recited in the embodiments is only one of many execution sequences, and does not represent the only execution sequence, and in the actual execution, the steps can be executed in the sequence of the method shown in the embodiment or the drawings or executed in parallel.

In the embodiment of the application, the electroencephalogram electrode device can comprise an electroencephalogram signal acquisition device, an adapter plate and a flexible circuit board, wherein the adapter plate can comprise a first area to be connected and a second area to be connected, the electroencephalogram signal acquisition device can comprise a first welding area, and the flexible circuit board can comprise a second welding area.

Specifically, as shown in fig. 8 and 9, the preparation method may include:

s801: carrying out ball mounting treatment on the first welding area to obtain a first mounted ball; the size of the first planting ball is matched with that of the first welding area.

In the embodiment of the application, the laser ball planting can be used for carrying out ball planting treatment on the first welding area to obtain the first ball planting. In the selection of the solder for laser ball mounting, the first solder ball may be a solder ball with a melting point of 217 ℃ and a model of SAC 305. That is, a SAC305 solder ball matched with the size of the first welding area can be selected, and the laser ball-planting technology is used for ball-planting on the first welding area of the electroencephalogram signal acquisition device. A in fig. 9 illustrates a schematic view of a process of ball-mounting the first bonding area.

S803: and contacting the first planting ball with a first region to be connected, so that the adapter plate is connected with the electroencephalogram signal acquisition device.

In recent years, Flip Chip technology (FC) for bump bonding has been developed more and more. The flip chip technology is a technology for directly bonding a bonding surface of a semiconductor bare chip downwards with a packaging substrate or a chip carrier, can shorten the length of an interconnection line, further reduces generated interconnection resistance, inductance and stray capacitance, and is suitable for high-frequency and high-speed electronic products. For the collection of high-density brain electrode signals, the action potential amplitude detected by the electrodes is generally in the magnitude of mu V, and the reduction of the resistance value is beneficial to reducing noise. Moreover, because the solder is directly soldered on the soldering surface, the area of the packaging substrate or the chip carrier occupied by the mounting interconnection is approximately equal to the size of a bare chip, and the soldering surface has small size, small interval and very high packaging density, is suitable for the chip packaging interconnection with high-density pin count, and is suitable for the packaging interconnection of thousands of current brain electrodes and even ten thousands of subsequently developed brain electrodes.

In this application embodiment, can back-off EEG signal acquisition device, with first planting ball with first the contact of treating the connection area for the keysets is connected with EEG signal acquisition device. That is, the adapter plate and the electroencephalogram signal acquisition device can be subjected to hot-press welding by adopting a back-off welding machine. Fig. 9 b is a schematic diagram illustrating the connection of the adapter plate and the electroencephalogram signal acquisition device.

S805: carrying out ball planting treatment on the second area to be connected to obtain second planting balls; the size of the second planting ball is matched with that of the second to-be-connected area, and the melting point of the second planting ball is lower than that of the first planting ball.

In the embodiment of the application, the second to-be-connected region can be subjected to ball planting treatment by utilizing laser ball planting to obtain the second ball planting. In the selection of the solder for laser ball mounting, the second solder ball can be a solder ball with a melting point of 138 ℃ and a model of Sn42Bi 58. That is, the Sn42Bi58 solder balls with the size matching with the second area to be connected can be selected and used for ball mounting on the second area to be connected of the interposer by using the laser ball mounting technology. Fig. 9 c is a schematic view illustrating a ball mounting process performed on the second region to be connected.

In an optional implementation manner, the second solder ball may select another solder ball having a melting point far lower than that of the first solder ball, so that the temperature of the second soldering is far lower than that of the first soldering, and further, the stability of the solder joint formed by the first soldering can be ensured, that is, the stability of the connection between the electroencephalogram signal acquisition device and the adapter plate can be ensured.

S807: and contacting the second planting ball with the second welding area, so that the adapter plate is connected with the flexible circuit board, and the brain electrode device is obtained.

In the embodiment of the application, the adapter plate can be reversely buckled, and the second implanted ball is contacted with the second welding area, so that the adapter plate is connected with the flexible circuit board to obtain the brain electrode device. That is, the electroencephalogram signal acquisition device, the adapter plate and the electroencephalogram signal acquisition device which are subjected to hot-press welding can be subjected to hot-press welding by adopting a back-off welding machine. A schematic diagram of connecting the interposer to the flexible circuit board is illustrated as d in fig. 9.

In the embodiment of the application, the sequence of the two times of welding can be changed. The back-off welding of the brain electrical signal acquisition device and the adapter plate can be carried out firstly, and then the back-off welding of the flexible circuit board and the adapter plate is carried out. For example, if the temperature born by the flexible circuit board is limited, the back-off welding of the electroencephalogram signal acquisition device and the adapter plate can be performed firstly, and then the back-off welding of the flexible circuit board and the adapter plate can be performed, so that the performance of the electroencephalogram electrode device can be prevented from being damaged. The flexible circuit board and the adapter plate can be welded in an inverted manner, and then the electroencephalogram signal acquisition device and the adapter plate can be welded in an inverted manner.

The embodiment of the application adopts the laser ball-planting technology and the inverted buckle welding technology, can connect the high-density electroencephalogram signal acquisition device, the adapter plate and the flexible circuit board at a lower welding temperature, can ensure that the performance of the electroencephalogram electrode device is not damaged, can improve the connection stability of the electroencephalogram electrode device, and can realize the connection of the electroencephalogram electrode signals of thousands of orders of magnitude under the processing capacity of the flexible circuit board.

In an embodiment of the present application, a method for manufacturing an electroencephalogram device may include manufacturing an interposer, fig. 10 is a schematic flow chart of a method for manufacturing an interposer according to an embodiment of the present application, and fig. 11 is a schematic view of a method for manufacturing an interposer according to an embodiment of the present application. In an alternative embodiment, the interposer may be prepared using the method steps shown in fig. 10 and 11, as follows:

s1001: obtaining a substrate; the substrate has a surface to be lithographed.

In the embodiment of the present application, the substrate may include schottky glass and a silicon wafer, and the upper surface of the substrate may be a surface to be subjected to photolithography. A in fig. 11 illustrates a schematic view of the structure of a substrate.

S1003: and carrying out photoetching treatment on the substrate, so that the surface to be subjected to photoetching is divided into a plurality of areas to be wired.

In the embodiment of the application, the substrate may be subjected to a photolithography process, so that the surface to be subjected to photolithography is divided into a plurality of areas to be wired, that is, a metal wiring pattern and a solder wiring pattern are formed on the surface to be subjected to photolithography.

S1005: preparing a metal layer and a welding layer on a plurality of areas to be wired; the welding layer comprises a plurality of to-be-prepared areas and a plurality of to-be-connected areas, the to-be-prepared areas are connected with the metal layer, the to-be-prepared areas are connected with the to-be-connected areas, and the to-be-connected areas comprise a first to-be-connected area and a second to-be-connected area.

In the embodiment of the application, a metal layer and a welding layer can be prepared on a plurality of areas to be wired, wherein the welding layer can comprise a plurality of areas to be prepared and a plurality of areas to be connected, the areas to be prepared are connected with the metal layer, and the areas to be prepared are connected with the areas to be connected. Namely, two areas to be prepared are respectively connected with two metal layers, and the two areas to be prepared are respectively connected with one area to be connected. That is, the metal layer, the region to be prepared, the region to be connected, the region to be prepared, and the metal layer are connected in sequence. In this manner, the first region to be connected and the second region to be connected can be formed. A schematic structure of preparing a metal layer and a solder layer on a plurality of regions to be wired is illustrated in b of fig. 11.

In the embodiment of the present application, the material of the metal layer may include chromium Cr, nickel Ni, and gold Au. The thickness of the metal layer may be 5nm when the metal layer is Cr, 100nm when the metal layer is Ni, and 100nm when the metal layer is Au.

S1007: and preparing an insulating layer on the metal layer and the area to be prepared of the welding layer, so that the area to be connected is exposed to the air, and obtaining the adapter plate.

In the embodiment of the application, the insulating layer can be prepared on the to-be-prepared areas of the metal layer and the welding layer, so that the to-be-connected areas are exposed to air, that is, the first to-be-connected area and the second to-be-connected area are exposed to air, and the adapter plate is obtained. A schematic structural diagram of the preparation of the insulating layer on the metal layer and the area to be prepared of the solder layer is illustrated in c of fig. 11. In the embodiment of the present application, the material of the insulating layer may be a photoresist with a model number SU 8. Fig. 12 is a first structural schematic diagram of an interposer provided in an embodiment of the present application.

Next, a specific embodiment of a method for manufacturing an electroencephalograph device according to the present application is described, fig. 13 is a first schematic structural diagram of an electroencephalograph device according to the present application, and fig. 14 is a second schematic structural diagram of an electroencephalograph device according to the present application. The present description provides the constituent structures as shown in the examples or schematic drawings, but more or the constituent structures may be included based on conventional or non-inventive labor. The constituent structures listed in the embodiments are only one of many execution orders, and do not represent unique constituent structures, and when the execution is actually performed, the constituent structures can be executed according to the embodiments or the constituent structures shown in the drawings.

In the embodiment of the application, the electroencephalogram device is a device obtained based on the preparation method.

In the embodiment of the present application, the electroencephalogram device may include an electroencephalogram signal acquisition device 1301, an adapter board 1303, and a flexible circuit board 1305.

Fig. 15 is a schematic structural diagram of an interposer provided in an embodiment of the present application, which includes a first region to be connected 1501 and a second region to be connected 1503, where a pitch between solder holes in the first region to be connected 1501 is 400 μm, and a pitch between solder holes in the second region to be connected 1503 is 850 μm. The brain electrical signal acquisition device may include a first soldering region, and the flexible circuit board may include a second soldering region.

In an alternative embodiment, the first region to be connected can be connected to the first welding region and the second region to be connected can be connected to the second welding region.

In an alternative embodiment, the pitch of the welding holes in the first welding area of the electroencephalogram signal acquisition device can be 400 μm, and the number of channels can be 720.

By adopting the brain electrode device provided by the embodiment of the application, the laser ball-planting technology and the inverted buckle welding technology are adopted, the high-density brain signal acquisition device and the adapter plate can be connected with the flexible circuit board at a lower welding temperature, the performance of the brain electrode device can be guaranteed not to be damaged, the connection stability of the brain electrode device can be improved, and the connection of the brain electrode signals of thousands of orders of magnitude can be realized under the processing capacity of the flexible circuit board.

According to the preparation method of the brain electrode device or the embodiment of the brain electrode device, the brain electrode device comprises the brain signal acquisition device, the adapter plate and the flexible circuit board, the adapter plate comprises a first area to be connected and a second area to be connected, the brain signal acquisition device comprises a first welding area, and the flexible circuit board comprises a second welding area. The preparation method comprises the following steps: carrying out ball mounting treatment on the first welding area to obtain a first mounted ball; the size of the first planting ball is matched with that of the first welding area; contacting the first ball with the first welding area to connect the adapter plate with the electroencephalogram signal acquisition device; carrying out ball planting treatment on the second area to be connected to obtain second planting balls; the size of the second planting balls is matched with that of the second to-be-connected area, and the melting point of the second planting balls is lower than that of the first planting balls; and contacting the second planting ball with the second welding area, so that the adapter plate is connected with the flexible circuit board, and the brain electrode device is obtained. Based on this application embodiment adopts laser balling technique and back-off welding technique, can be connected high-density brain electrical signal collection device, keysets and flexible circuit board under lower welding temperature, can guarantee that the performance of brain electrode device is not damaged, and can improve the connection stability of brain electrode device, can also realize the connection of the brain electrode signal of thousand orders of magnitude under flexible circuit board's processing ability in addition.

In the present invention, unless otherwise expressly stated or limited, the terms "connected" and "connected" are to be construed broadly, e.g., as meaning either a fixed connection or a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

It should be noted that: the foregoing sequence of the embodiments of the present application is for description only and does not represent the superiority and inferiority of the embodiments, and the specific embodiments are described in the specification, and other embodiments are also within the scope of the appended claims. In some cases, the actions or steps recited in the claims can be performed in the order of execution in different embodiments and achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown or connected to enable the desired results to be achieved, and in some embodiments, multitasking and parallel processing may also be possible or may be advantageous.

All the embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment is described with emphasis on differences from other embodiments. In particular, for the structural embodiment, since it is based on the method embodiment, the description is simple, and the relevant points can be referred to the partial description of the method embodiment.

While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.