阅读说明：本技术 玻璃光罩及其制造方法 (Glass photomask and method for manufacturing the same ) 是由 王明波 于 2021-06-18 设计创作，主要内容包括：本发明公开了一种玻璃光罩及其制造方法,该玻璃光罩的制造方法可包括：提供匀胶铬板,匀胶铬板包括依次层叠设置的玻璃基板、铬层、氧化铬层以及光刻胶层,玻璃基板具有第一区域和与第一区域连接的第二区域；去除覆盖在第一区域上的光刻胶层；蚀刻去除覆盖在第一区域上的氧化铬层与铬层；去除覆盖在第二区域上的光刻胶层；蚀刻去除覆盖在第二区域上的氧化铬层,得到玻璃光罩。从而铬层形成玻璃光罩的遮光区域的表面,以使玻璃光罩的遮光区域的表面对光的反射性高。本发明提供的玻璃光罩的制造方法通过对匀胶铬板进行两次蚀刻,实现了使用具有低反射性的氧化铬膜层的匀胶铬板,生产遮光区域的表面具有高反射性的玻璃光罩,生产成本低。(The invention discloses a glass photomask and a manufacturing method thereof, and the manufacturing method of the glass photomask can comprise the following steps: providing a uniform glue chromium plate, wherein the uniform glue chromium plate comprises a glass substrate, a chromium layer, a chromium oxide layer and a photoresist layer which are sequentially stacked, and the glass substrate is provided with a first area and a second area connected with the first area; removing the photoresist layer covering the first region; etching to remove the chromium oxide layer and the chromium layer covering the first region; removing the photoresist layer covering the second region; and etching to remove the chromium oxide layer covering the second region to obtain the glass photomask. The chromium layer forms the surface of the light shielding area of the glass photomask, so that the surface of the light shielding area of the glass photomask has high reflectivity to light. The method for manufacturing the glass photomask provided by the invention realizes the use of the uniform-glue chromium plate with the chromium oxide film layer with low reflectivity by etching the uniform-glue chromium plate twice, produces the glass photomask with the surface of the shading area with high reflectivity, and has low production cost.)

1. A method for manufacturing a glass photomask is characterized by comprising the following steps:

providing a uniform glue chromium plate, wherein the uniform glue chromium plate comprises a glass substrate, a chromium layer, a chromium oxide layer and a photoresist layer which are sequentially stacked, and the glass substrate is provided with a first area and a second area connected with the first area;

removing the photoresist layer covering the first region to expose the chromium oxide layer covering the first region;

etching to remove the chromium oxide layer and the chromium layer covering the first area so as to expose the first area;

removing the photoresist layer covering the second region to expose the chromium oxide layer covering the second region;

and etching to remove the chromium oxide layer covering the second area so as to expose the chromium layer covering the second area, thereby obtaining the glass photomask.

2. The method of claim 1, wherein the removing the photoresist layer covering the first region to expose the chromium oxide layer covering the first region comprises:

providing a photoetching machine, and irradiating the photoresist layer covered on the first area or the second area through the photoetching machine;

and developing to remove the photoresist layer covering the first region so as to expose the chromium oxide layer covering the first region.

3. The method of claim 1, wherein the etching to remove the chrome oxide layer and the chrome layer covering the first region to expose the first region comprises:

providing an etching solution, and performing first soaking on the uniform glue chromium plate by using the etching solution to dissolve and remove the chromium oxide layer and the chromium layer covering the first area so as to expose the first area;

taking the uniform glue chromium plate out of the etching solution, and cleaning to remove the etching solution attached to the surface of the uniform glue chromium plate;

wherein the time length of the first soaking is t1, t1 is more than or equal to 43s and is less than or equal to 53 s.

4. The method of claim 1, wherein after the removing the photoresist layer covering the second region to expose the chrome oxide layer covering the second region, the method further comprises:

and cleaning to remove impurities attached to the surface of the photoresist uniformizing chromium plate and the residual photoresist layer.

5. The method for manufacturing a reticle according to claim 1, wherein the etching removes the chromium oxide layer covering the second region to expose the chromium layer covering the second region, and the method for manufacturing a reticle comprises:

providing an etching solution, and soaking the uniform chromium plate for the second time by using the etching solution to dissolve and remove the chromium oxide layer covering the second area so as to expose the chromium layer covering the second area;

and taking the uniform glue chromium plate out of the etching solution, and cleaning to remove the etching solution attached to the surface of the uniform glue chromium plate to obtain the glass photomask.

6. The method for manufacturing a glass photomask of claim 5, wherein the time length of the second soaking is t2, 10s ≦ t2 ≦ 13 s.

7. The method for manufacturing a reticle set according to any one of claims 1 to 6, wherein after the etching removes the chromium oxide layer covering the second region to expose the chromium layer covering the second region, the method for manufacturing a reticle set further comprises:

measuring the chromium layer to obtain the contact ratio of the chromium layer and the second area;

and judging whether the contact ratio of the chromium layer and the second area reaches a preset requirement, if so, carrying out defect inspection on the surface of the glass photomask.

8. The method of manufacturing a glass optical cover according to claim 7, wherein after the inspecting the surface of the glass optical cover for defects, the method further comprises:

and judging whether the surface of the glass photomask has defects or not, and if so, determining whether the surface of the glass photomask is repaired or not according to the defects.

9. The method of manufacturing a glass optical cover according to claim 8, wherein after determining whether the defect exists on the surface of the glass optical cover, the method of manufacturing a glass substrate further comprises:

cleaning the glass photomask;

and packaging the glass light shield.

10. A glass optical mask, comprising:

a glass substrate having a first region and a second region connected to the first region; and the number of the first and second groups,

and the chromium layer covers the second area.

Technical Field

The invention relates to the technical field of manufacturing of glass photomasks, in particular to a glass photomask and a manufacturing method thereof.

Background

The light-shielding region on the surface of the glass photomask in the market at present often has low reflection characteristic. Therefore, the materials (such as the chromium plate) commonly used in the industry for producing the glass photomask have a film layer (such as a chromium oxide film layer) with low reflectivity on the surface. However, in the process of photolithography of a semiconductor, when a partial region of the semiconductor is shielded by a light-shielding region of a glass mask, a charge-coupled device (CCD) of a device is required to automatically capture an alignment mark through a surface of the glass mask to automatically align the glass mask, thereby improving the automation degree of semiconductor production. However, the glass mask with a film layer having low reflection characteristics cannot reflect sufficient light to the ccd due to its weak light reflection capability, so that the device cannot automatically align the glass mask through the ccd.

Disclosure of Invention

The embodiment of the invention discloses a glass photomask and a manufacturing method thereof, which can manufacture the glass photomask with high reflection performance on the surface by using the existing production raw materials of the glass photomask with low reflection performance on the surface.

In order to achieve the above object, in a first aspect, the present invention discloses a method for manufacturing a glass photomask, comprising the steps of: providing a uniform glue chromium plate, wherein the uniform glue chromium plate comprises a glass substrate, a chromium layer, a chromium oxide layer and a photoresist layer which are sequentially stacked, and the glass substrate is provided with a first area and a second area connected with the first area;

removing the photoresist layer covering the first region to expose the chromium oxide layer covering the first region;

etching to remove the chromium oxide layer and the chromium layer covering the first area so as to expose the first area;

removing the photoresist layer covering the second region to expose the chromium oxide layer covering the second region;

and etching to remove the chromium oxide layer covering the second area so as to expose the chromium layer covering the second area, thereby obtaining the glass photomask.

As an optional implementation manner, in an embodiment of the first aspect of the present application, the removing the photoresist layer covering the first region to expose the chromium oxide layer covering the first region includes:

providing a photoetching machine, and irradiating the photoresist layer covered on the first area or the second area through the photoetching machine;

and developing to remove the photoresist layer covering the first region so as to expose the chromium oxide layer covering the first region.

As an optional implementation manner, in an embodiment of the first aspect of the present application, the etching to remove the chromium oxide layer and the chromium layer covering the first region to expose the first region includes:

providing an etching solution, and performing first soaking on the uniform glue chromium plate by using the etching solution to dissolve and remove the chromium oxide layer and the chromium layer covering the first area so as to expose the first area;

taking the uniform glue chromium plate out of the etching solution, and cleaning to remove the etching solution attached to the surface of the uniform glue chromium plate;

wherein the time length of the first soaking is t1, t1 is more than or equal to 43s and is less than or equal to 53 s.

As an optional implementation manner, in an embodiment of the first aspect of the present application, after the removing the photoresist layer covering the second region to expose the chromium oxide layer covering the second region, the method for manufacturing a glass photomask further includes:

and cleaning to remove impurities attached to the surface of the photoresist uniformizing chromium plate and the residual photoresist layer.

As an optional implementation manner, in an embodiment of the first aspect of the present application, the etching removes the chromium oxide layer covering the second region to expose the chromium layer covering the second region, so as to obtain the glass photomask, including:

providing an etching solution, and soaking the uniform chromium plate for the second time by using the etching solution to dissolve and remove the chromium oxide layer covering the second area so as to expose the chromium layer covering the second area;

and taking the uniform glue chromium plate out of the etching solution, and cleaning to remove the etching solution attached to the surface of the uniform glue chromium plate to obtain the glass photomask.

As an alternative implementation, in the embodiment of the first aspect of the present application, the duration of the second soaking is t2, and t2 is less than or equal to 10s and less than or equal to 13 s.

As an optional implementation manner, in an embodiment of the first aspect of the present application, after the etching removes the chromium oxide layer covering the second region to expose the chromium layer covering the second region, so as to obtain the reticle, the method for manufacturing the reticle further includes:

measuring the chromium layer to obtain the contact ratio of the chromium layer and the second area;

and judging whether the contact ratio of the chromium layer and the second area reaches a preset requirement, if so, carrying out defect inspection on the surface of the glass photomask.

As an optional implementation manner, in an embodiment of the first aspect of the present application, after the inspecting the surface of the glass reticle for the defect, the method for manufacturing the glass reticle further includes:

and judging whether the surface of the glass photomask has defects or not, and if so, determining whether the surface of the glass photomask is repaired or not according to the defects.

As an optional implementation manner, in an embodiment of the first aspect of the present application, after determining whether the defect exists on the surface of the glass reticle, the method for manufacturing a glass substrate further includes:

cleaning the glass photomask;

and packaging the glass light shield.

In a second aspect, the present invention also discloses a glass photomask, comprising:

a glass substrate having a first region and a second region connected to the first region; and the number of the first and second groups,

and the chromium layer covers the second area.

Compared with the prior art, the invention has the beneficial effects that:

the glass photomask and the manufacturing method thereof provided by the embodiment of the invention have the advantages that the uniform glue chromium plate is etched twice, the chromium oxide layer and the chromium layer which are covered on the first area are removed during the first etching, the chromium oxide layer which is covered on the second area is removed during the second etching to expose the chromium layer which is covered on the second area, so that the chromium layer which is covered on the second area of the glass substrate is formed into the surface of the shading area of the glass photomask, the high-reflectivity property of the chromium layer to light is utilized, the use of the uniform glue chromium plate with the low-reflectivity chromium oxide film layer is realized, the glass photomask with the high-reflectivity surface in the shading area is produced, and the production cost of the high-reflectivity glass photomask is reduced.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic flow chart illustrating a method for fabricating a glass photomask according to an embodiment of the present disclosure;

FIG. 2 is a schematic structural diagram of a homogenized chromium plate disclosed in an embodiment of the present application;

FIG. 3 is a schematic structural diagram of a photoresist uniformizing chrome plate obtained after removing a photoresist layer covering a first region according to an embodiment of the disclosure;

FIG. 4 is a schematic flowchart illustrating a process of removing the photoresist layer covering the first region to expose the chrome oxide layer covering the first region according to an embodiment of the disclosure;

FIG. 5 is a schematic structural diagram of a uniform chromium plate obtained after removing a chromium oxide layer and a chromium layer covering a first region according to an embodiment of the present disclosure;

FIG. 6 is a schematic flow chart illustrating an etching process for removing a chromium oxide layer and a chromium layer covering a first region to expose the first region according to an embodiment of the present disclosure;

FIG. 7 is a structural diagram of a uniform chrome plate obtained after removing the photoresist layer covering the second region according to an embodiment of the disclosure;

FIG. 8 is a schematic view of a glass mask according to an embodiment of the present disclosure;

FIG. 9 is a schematic flow chart illustrating a process of etching away the chrome oxide layer covering the second region to expose the chrome layer covering the second region to obtain a glass photo-mask according to an embodiment of the present disclosure;

FIG. 10 is a schematic flow chart illustrating a method for fabricating a glass mask according to an embodiment of the present disclosure.

Icon: 1. homogenizing the glue chromium plate; 10. a glass substrate; 100. a first region; 101. a second region; 11. a chromium layer; 12. a chromium oxide layer; 13. a photoresist layer; 2. a glass mask; 20. a light-transmitting region; 21. a light-shielding region.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the present invention, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "center", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate an orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These terms are used primarily to better describe the invention and its embodiments and are not intended to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.

Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meanings of these terms in the present invention can be understood by those skilled in the art as appropriate.

Furthermore, the terms "mounted," "disposed," "provided," "connected," and "connected" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meanings of the above terms in the present invention can be understood by those of ordinary skill in the art according to specific situations.

Furthermore, the terms "first," "second," and the like, are used primarily to distinguish one device, element, or component from another (the specific nature and configuration may be the same or different), and are not used to indicate or imply the relative importance or number of the indicated devices, elements, or components. "plurality" means two or more unless otherwise specified.

The surface of the light-shielding region of the glass photomask in the market at present often has low reflection characteristic. Therefore, the materials (such as the chromium plate) commonly used in the industry for producing the glass photomask have a film layer (such as a chromium oxide film layer) with low reflectivity on the surface. The uniform glue chromium plate comprises a glass substrate, a chromium layer, a chromium oxide layer and a photoresist layer which are sequentially stacked, and the surface of the uniform glue chromium plate used for producing a shading area is a glass photomask with a chromium oxide film layer with low reflectivity for light.

However, in the process of photolithography of a semiconductor, when a partial region of the semiconductor is shielded by a light-shielding region of a glass mask, a charge-coupled device (CCD) of a device is required to automatically capture an alignment mark through a surface of the glass mask to automatically align the glass mask, thereby improving the automation degree of semiconductor production. However, the glass mask with a layer with low reflection characteristics (such as a chromium oxide layer) cannot reflect enough light to the ccd due to its weak light reflection capability, so that the device cannot automatically align the glass mask through the ccd.

It can be understood that, in order to meet the production requirement of the commonly used glass photo-mask on the market, the uniform glue chrome plate with the film layer with low reflectivity (chrome oxide film layer) has large production scale and low purchase cost, while the production cost and purchase cost of the raw material for producing the glass photo-mask with the film layer with high reflectivity are very high. Therefore, how to effectively reduce the production cost and the purchase cost to produce the glass photomask with a highly reflective film layer is an urgent problem to be solved.

The technical solution of the present invention will be further described with reference to the following embodiments and the accompanying drawings.

Referring to fig. 1 and fig. 2, a first aspect of the present invention discloses a method for manufacturing a glass photomask, comprising the following steps:

and S1, providing a uniform glue chromium plate.

The glue leveling chromium plate 1 comprises a glass substrate 10, a chromium layer 11, a chromium oxide layer 12 and a photoresist layer 13 which are sequentially stacked, wherein the glass substrate 10 has a first region 100 and a second region 101 connected with the first region 100, as shown in fig. 2, and a dotted line in fig. 2 shows a boundary between the first region 100 and the second region 101.

In the production process of the integrated circuit, the glass photomask can be used as a negative film after similar exposure for projection positioning of the integrated circuit, and the circuit projected by the glass photomask is subjected to photoetching by the integrated circuit photoetching machine. Based on this, optionally, the light-transmitting area and the light-shielding area of the glass photomask are connected, and the light-transmitting area or the light-shielding area can be formed into a circuit pattern to realize the function of the glass photomask as a negative film in the process of manufacturing an integrated circuit by photoetching. Alternatively, the first region 100 of the glass substrate 10 may be used to form a light-transmitting region of a glass mask, and the second region 101 of the glass substrate 10 may be used to form a light-blocking region of the glass mask.

Alternatively, the first regions 100 and the second regions 101 may be arranged in a staggered manner, for example, the first regions 100 and the second regions 101 on the glass substrate 10 may be divided into a plurality of regions, and one second region 101 may be located between two adjacent first regions 100. For convenience of observation and explanation, fig. 2 schematically shows an example of the distribution of the first regions 100 and the second regions 101, taking the shape of the first regions 100 and the second regions 101 alternating with each other as an example. It is understood that the distribution of the first and second regions 100 and 101 may be set according to the shape of the circuit actually formed, and this embodiment is not particularly limited thereto. For example, the first region 100 may be formed in the shape of a plurality of electrically connecting traces in the same or different circuits, and the plurality of circuits are arranged in an array at intervals, and the second region 101 is connected to the first region 100 and formed as a vacant portion of each circuit without traces and a spacing portion between a plurality of circuits.

In some embodiments, the glass substrate 10 may be a circular, rectangular or other quartz glass plate, so that the glass mask has a certain tensile and compressive strength through the glass substrate 10 and can maintain a fixed shape, and at the same time, by using the high light transmittance of the quartz glass, light radiation can pass through the light transmittance region of the glass substrate 10 to irradiate onto the chip during the photolithography process, thereby achieving the effect of projecting a circuit for performing photo etching by using the glass mask as a negative plate.

Optionally, the glass substrate 10 may have a certain thickness, so that the glass mask has a certain tensile strength and can maintain a fixed shape, and meanwhile, the thickness of the glass substrate 10 may not be too thick, so as to shorten the optical path length of the optical radiation in the photolithography process, so as to reduce the offset amplitude of the position of the optical radiation when reaching the chip surface, and achieve the effect of improving the precision of the glass mask, and therefore, the thickness d1 of the glass substrate 10 may satisfy 1.6mm ≦ d1 ≦ 8mm, for example, the thickness d1 of the glass substrate 10 may be: 1.6mm, 1.8mm, 2.0mm, 2.2mm, 2.4mm, 2.6mm, 2.8mm, 3.0mm, 3.2mm, 3.4mm, 3.6mm, 3.8mm, 4.0mm, 4.2mm, 4.4mm, 4.6mm, 4.8mm, 5.0mm, 5.2mm, 5.4mm, 5.6mm, 5.8mm, 6.0mm, 6.2mm, 6.4mm, 6.6mm, 6.8mm, 7.0mm, 7.2mm, 7.4mm, 7.6mm, 7.8mm, 8.0mm, or the like.

And S2, removing the photoresist layer covering the first area to expose the chromium oxide layer covering the first area.

The purpose of this step is to facilitate the removal of the chromium oxide layer 12 overlying the first region 100 in a subsequent step. Specifically, please refer to fig. 1 to 4 together, wherein fig. 2 shows the structure of the chrome plate 1 before step S2, and fig. 3 shows the structure of the chrome plate 1 after step S2.

Specifically, step S2 may include the steps of:

and S20, providing a photoetching machine, and irradiating the photoresist layer covered on the first area or the second area through the photoetching machine. The solubility of the photoresist layer 13 in the developing solution, which is coated on the first region 100 or the second region 101, can be changed by irradiating the photoresist layer 13 through a photolithography machine.

And S21, developing to remove the photoresist layer covering the first area so as to expose the chromium oxide layer covering the first area. In this way, it is possible to facilitate the removal operation directly of the chromium oxide layer 12 covering the first area 100 in a subsequent step.

The photoresist layer 13 is mainly composed of photosensitive resin, sensitizer and solvent, and has a characteristic that solubility in a developing solution changes after exposure to ultraviolet light, electron beams, ion beams or X-rays (roentgen rays). The photoresist layer 13 may be a positive photoresist or a negative photoresist according to the course of a photolithography process. In an alternative example, the photoresist layer 13 is a positive photoresist, the main component of the photoresist layer 13 can be an o-diazoquinone compound, and in step S20, the photolithography machine can irradiate the photoresist layer 13 covering the first region 100, so that the solubility of the photoresist layer 13 covering the first region 100 in the developing solution is increased. In another alternative example, the photoresist layer 13 is a negative photoresist, the main component of the photoresist layer 13 may be a bisazide organic compound or cinnamate, etc., and in step S20, the photolithography machine may irradiate the photoresist layer 13 covering the second region 101, so that the solubility of the photoresist layer 13 covering the second region 101 in the developing solution is reduced.

Alternatively, in step S21, the photoresist leveling chrome plate 1 may be placed in a developing solution for developing, and since the solubility of the photoresist layer 13 covered on the first region 100 in the developing solution is greater than the solubility of the photoresist layer 13 covered on the second region 101 in the developing solution, the photoresist layer 13 covered on the first region 100 can be completely dissolved by the developing solution, and at the same time, the photoresist layer 13 covered on the second region 101 is not completely dissolved, so as to expose the chrome oxide layer 12 covered on the first region 100.

And S3, etching to remove the chromium oxide layer and the chromium layer covering the first region to expose the first region.

The purpose of this step is to form the first region 100 of the glass substrate 10 as the light-transmissive region 20 of the glass mask 2. Specifically, referring to fig. 1, fig. 3, fig. 5 and fig. 6 together, fig. 3 shows the structure of the chrome plate 1 before step S3, and fig. 5 shows the structure of the chrome plate 1 after step S3.

In some embodiments, step S3 may include:

and S30, providing an etching solution, and performing first soaking on the uniform chromium plate by using the etching solution to dissolve and remove the chromium oxide layer and the chromium layer covering the first area so as to expose the first area.

Alternatively, the time t1 for the first soaking is long enough to completely remove the chromium oxide layer 12 and the chromium layer 11 covering the first region 100. Meanwhile, in order to avoid over-etching, which causes the chromium oxide layer 12 and the chromium layer 11 covering the second region 101 to be also etched away, the time period t1 should not be too long, so the time period t1 of the first soaking may satisfy 43s ≦ t1 ≦ 53s, for example, the time period t1 may be 43s, 45s, 47s, 49s, 51s, 53s, and so on.

S31, taking the uniform glue chromium plate out of the etching solution, and cleaning to remove the etching solution attached to the surface of the uniform glue chromium plate. Therefore, it is possible to avoid the situation that the etching solution adhering to the surface of the glue leveling chromium plate 1 continues to etch the chromium oxide layer 12 and the chromium layer 11 covering the second region 101 after the etching is finished, so that the shape accuracy of the light-shielding region of the obtained glass photomask is low, and the yield of the glass photomask is reduced.

And S4, removing the photoresist layer covering the second area to expose the chromium oxide layer covering the second area.

The purpose of this step is to facilitate the direct removal of the chromium oxide layer 12 in the subsequent steps, wherein the photoresist layer 13 covering the second region 101 can be removed by plasma bombardment or immersion dissolution of a cleaning solution. Specifically, referring to fig. 1, 5 and 7 together, fig. 5 shows the structure of the chrome plate 1 before step S4, and fig. 7 shows the structure of the chrome plate 1 after step S4.

In some embodiments, after step S4, the method for manufacturing a glass photomask may further include:

and S41, cleaning to remove impurities attached to the surface of the photoresist uniformizing chromium plate and the residual photoresist layer. Therefore, impurities attached to the surface of the glue homogenizing chromium plate 1 in the operation process can be removed, and the impurities are prevented from entering the etching solution in the subsequent step and influencing the etching rate of the etching solution. Meanwhile, the photoresist layer 13 covering the second region 101 can be completely removed, and the situation that the chromium oxide layer 12 covering the second region 101 cannot be completely removed in the subsequent steps and the precision of the manufactured glass photomask is reduced due to incomplete exposure of the chromium oxide layer 12 caused by the residual photoresist layer 13 is avoided.

And S5, etching to remove the chromium oxide layer covering the second region to expose the chromium layer covering the second region, thereby obtaining the glass photomask.

The purpose of this step is to form the surface of the chrome layer 11 having high reflectivity to light as the surface of the light-shielding region of the photomask glass. Specifically, referring to fig. 1, 7 and 8 together, fig. 7 shows the structure of the photoresist mask 1 before step S5, and fig. 8 shows the structure of the glass mask 2 obtained after step S5.

In some embodiments, the chromium layer 11 may function as a light-blocking region 21 for blocking the transmission of light radiation through the reticle 2The thickness d2 of 11 may suffice,for example, the thickness d2 of the chromium layer 11 may be: orAnd the like.

Further, in order to achieve the effect of automatically capturing the alignment mark on the surface of the reticle 2 by the ccd device when the integrated circuit is produced by using the reticle 2, the reflectance ρ of the surface of the chrome layer 11 may satisfy: 70% ≦ ρ ≦ 90%, for example, the reflectance ρ may be: 70%, 71%, 72%, 73%, 74%, 75%, 76%, 77%, 78%, 79%, 80%, 81%, 82%, 83%, 84%, 85%, 86%, 87%, 88%, 89%, or 90%, etc.

Referring to fig. 7 to 9, in some embodiments, the step S5 may include:

and S50, providing an etching solution, and performing second soaking on the uniform chromium plate by using the etching solution to dissolve and remove the chromium oxide layer covering the second area so as to expose the chromium layer covering the second area.

It can be understood that, during the second soaking of the uniform glue chrome plate 1, the chromium oxide layer 12 covering the second region 101 should be completely removed to avoid that the chromium oxide layer 12 with low reflectivity to light remains on the surface of the light-shielding region 21 of the glass photo-mask 2, which results in a decrease in reflectivity to light of the surface of the light-shielding region 21 of the glass photo-mask 2 and thus a decrease in accuracy of the ccd automatically capturing the alignment mark on the surface of the glass photo-mask 2. Since the chromium oxide is green or brown, and the chromium is steel gray and has metallic luster, in the process of performing the second soaking on the uniform chromium plate 1, in one mode, the operator can judge whether the chromium oxide layer 12 is completely removed through the change of the surface color of the uniform chromium plate 1, that is, when the operator observes that the surface of the uniform chromium plate 1 is changed from green or brown to steel gray with metallic luster, the operator can judge that the chromium oxide layer 12 is completely removed, so that the step S50 can be ended.

Alternatively, whether the chromium oxide layer 12 is completely removed may be determined by controlling the duration of the second soaking. Specifically, in order to completely remove the chromium oxide layer 12 covering the second region 101, so as to avoid affecting the light reflection accuracy of the surface of the light shielding region 21 of the glass photomask 2, and thus affecting the accuracy of the automatic alignment of the glass photomask 2 by the ccd, the time duration t2 of the second soaking should be long enough, and at the same time, in order to avoid over-etching, the chromium layer 11 covering the second region 101 is also etched away, so that the chromium layer 11 cannot achieve the light shielding function of the light shielding region 21 of the glass photomask 2, and the time duration t2 of the second soaking should not be too long, so that, for example, when the thickness d3 of the chromium oxide layer 12 is about 0.015um, the time duration t2 of the second soaking may satisfy that t2 is not greater than 10s and not greater than 13s, for example, the time duration t2 may be 10s, 10.8s, 11.6s, 12.4s, or 13s, and the like.

S51, taking the uniform glue chromium plate out of the etching solution, and cleaning to remove the etching solution attached to the surface of the uniform glue chromium plate to obtain the glass photomask. Therefore, it is possible to avoid the situation that the etching solution attached to the surface of the glue spreading chromium plate 1 continues to etch the chromium layer 11 covering the second region 101 after the etching is finished, and the light shielding effect of the light shielding region 21 of the obtained glass photomask 2 is reduced, thereby reducing the yield of the glass photomask 2.

Referring to fig. 8 and 10, in some embodiments, after step S5, the method for manufacturing the glass mask 2 may further include:

s520, measuring the chromium layer to obtain the contact ratio of the chromium layer and the second area. Thus, the accuracy of the glass mask 2 can be checked. Specifically, the shape data of the corresponding second region 101 may be compared by measuring the total length h1 of the shape formed by the chromium layer 11 on the glass substrate 10 along the direction parallel to the plate surface of the glass substrate 10 and the width h2 of the interval between the two parts of the chromium layer 11 at intervals, so as to obtain the error magnitude T of the shapes of the chromium layer 11 and the second region 101, and show the coincidence degree of the chromium layer 11 and the second region 101 through the error magnitude T. Taking the shape of the first area 100 that can be formed into a plurality of same or different electrical connection traces in the circuit as an example, along the direction parallel to the plate surface of the glass substrate 10, the total length h1 of the shape formed by the chromium layer 11 on the glass substrate 10 can be the length of each circuit structure, so as to obtain the error of each circuit in the total structure dimension by measurement, and the width h2 of the interval between two parts of the chromium layer 11 at intervals can be the distance between two adjacent electrical connection traces included in the circuit, so as to obtain the error of each circuit in the microstructure dimension by measurement.

S521, judging whether the contact ratio of the chromium layer and the second region meets a preset requirement, if so, executing a step S521a, namely, performing defect inspection on the surface of the glass photomask. In some embodiments, the preset requirement may be that the error magnitude T is satisfied: t is smaller than or equal to-100 um and smaller than or equal to 100um, for example, when the error T is-100 um, -50um, 50um or 100um, the contact ratio between the chromium layer 11 and the second region 101 reaches the predetermined requirement, and when the error T is-200 um, -150um, 150um or 200um, the contact ratio between the chromium layer 11 and the second region 101 does not reach the predetermined requirement.

It is understood that if the contact ratio does not meet the predetermined requirement, step S60 may be executed to discard the glass mask 2 directly, so as to remove the defective products in time. If the contact ratio meets the predetermined requirement, step S521a may be executed, i.e., it is determined whether the surface of the glass mask has a defect, and if so, step S522a may be executed, i.e., it is determined whether to repair the surface of the glass mask according to the defect, so as to avoid directly scrapping a portion of the glass mask 2 having a slight defect, and reduce the scrap rate, thereby reducing the production cost of the glass mask 2.

Alternatively, the defect may include, but is not limited to, a foreign substance attached to the surface of the glass optical cover 2, a flaw on the surface of the glass optical cover 2, or an excess shape or a defect formed at the edge of the chrome layer 11. Further, when all the defects are smaller than or equal to 100um in size and the number of the defects is less than or equal toAt 0.003pc/cm²When the defects have a small influence on the accuracy of the glass photomask 2, it can be determined that the surface of the glass photomask 2 has no defects, for example, when the sizes of the defects are all smaller than 100um and the number of the defects is 0.003pc/cm²、0.002pc/cm²、0.001pc/cm²、0.0005pc/cm²Or 0.0002pc/cm²In this case, it can be judged that no defect exists on the surface of the glass photomask 2. When the number of the defects is more than 0.003pc/cm²When the size of at least one defect is larger than 100um, the defect has a large influence on the accuracy of the glass photomask 2, and thus it can be judged that the surface of the glass photomask 2 has a defect, for example, when the number of defects is 0.0031pc/cm²、0.0038pc/cm²、0.004pc/cm²、0.005pc/cm²Or 0.01pc/cm²When the defect exists, or when the size of the defect is 100.1um, 120um, 150um, 200um or 500um, it can be determined that the surface of the glass mask 2 has the defect, and at this time, the glass mask 2 should be scrapped.

Optionally, if the defect is an excess shape or a missing shape formed at the edge of the chromium layer 11, the defect may be repaired by a repairing method, so that step S61 may be performed, that is, the surface of the glass photomask is repaired to eliminate the defect, so as to repair the glass photomask 2 with slight defect into a qualified product meeting the requirement range of the use precision. Specifically, when the defect is an excessive shape formed at the edge of the chromium layer 11, the defect may be repaired by cutting off an excessive portion of the chromium layer 11, and when the defect is a defect formed at the edge of the chromium layer 11, the defect may be repaired by filling up the missing portion of the chromium layer 11.

It can be understood that if the defect can not be compensated by repairing, the glass photomask 2 can be scrapped, so as to remove the defective product which can not be repaired in time.

In some embodiments, for the good-quality reticle 2 obtained, that is, the reticle 2 in which the contact ratio of the chromium layer 11 and the second region 101 meets the predetermined requirement and no defect exists, and the reticle 2 in which the contact ratio of the chromium layer 11 and the second region 101 meets the predetermined requirement and the defect is repaired and then eliminated, the method for manufacturing the reticle 2 further includes:

s70, cleaning the glass mask. Thus, impurities attached to the surface of the glass photomask 2 in the operation process can be removed, and the influence of the impurities on the precision of the glass photomask 2 is avoided.

S71, packaging the glass light shield. Therefore, the glass light shield 2 can be prevented from being polluted and stained with impurities in the transportation process or being damaged by collision.

It can be seen that, by using the manufacturing method of the glass photomask 2 provided by the first aspect of the embodiment of the present invention, the uniform-glue chromium plate 1 is subjected to two times of etching, the chromium oxide layer 12 and the chromium layer 11 covering the first area 100 are removed during the first etching, the chromium oxide layer 12 covering the second area 101 is removed during the second etching, so as to expose the chromium layer 11 covering the second area 101, so that the chromium layer 11 covering the second area 101 of the glass substrate 10 is formed as the surface of the light-shielding area 21 of the glass photomask 2, and by using the property of the chromium layer 11 that the light has high reflectivity, the use of the uniform-glue chromium plate 1 with the low-reflectivity chromium oxide layer is realized, the glass photomask 2 with the high reflectivity on the surface of the light-shielding area 21 is produced, and the production cost of the high-reflectivity glass photomask 2 is reduced.

Referring to fig. 8, fig. 8 is a schematic structural diagram of a glass photomask 2 disclosed in the present embodiment, and a second aspect of the present invention discloses a glass photomask 2, including: a glass substrate 10 and a chromium layer 11. The glass substrate 10 has a first region 100 and a second region 101 connected to the first region 100, as shown in fig. 8, and a thick dotted line in fig. 8 shows a boundary between the first region 100 and the second region 101. The chrome layer 11 covers the second area 101, so that the first area 100 of the glass substrate 10 is formed as a light-transmitting area 20 of the glass photomask 2, the second area 101 of the glass substrate 10 and the chrome layer 11 covering the second area 101 are formed as a light-shielding area 21 of the glass photomask 2, and the characteristics of low light transmittance and high reflectivity of the chrome layer 11 to light are utilized to realize the light-shielding effect of the light-shielding area 21 of the glass photomask 2 and the high reflectivity of the surface of the light-shielding area 21 to enable a charge-coupled device (CCD) to automatically capture the alignment mark through the surface light of the glass photomask 2 to automatically align the glass photomask 2, thereby improving the automation degree of the production of the semiconductor.

Alternatively, the transparent region 20 or the opaque region 21 of the glass mask 2 can be formed as a circuit pattern, and the glass mask 2 can be used as a negative film after similar exposure in the production process of the integrated circuit for projection positioning of the integrated circuit, and the circuit projected by the glass mask 2 can be photo-etched by an integrated circuit lithography machine.

In the photomask 2 disclosed in the second aspect of the embodiment of the present invention, the second region 101 of the glass substrate 10 and the chromium layer 11 covering the second region 101 are formed as the light-shielding region 21 of the photomask 2, and the characteristics of low light transmittance and high reflectivity to light of the chromium layer 11 are utilized to realize the light-shielding effect of the light-shielding region 21 of the photomask 2 and the high reflectivity to light of the surface of the light-shielding region 21, so that the ccd can automatically capture the alignment mark through the surface of the photomask 2, thereby realizing the automatic alignment of the photomask 2 and improving the automation degree of the semiconductor production.

The above detailed description of the glass photomask and the manufacturing method thereof disclosed by the embodiments of the present invention is provided, and the principle and the embodiments of the present invention are explained by applying specific examples, and the above description of the embodiments is only used to help understanding the glass photomask and the manufacturing method thereof and the core concept thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.