阅读说明：本技术 电子器件及电子器件的制造方法 (Electronic device and method for manufacturing electronic device ) 是由 山田一幸 于 2021-06-22 设计创作，主要内容包括：提供设计及制造工序的自由度高的电子器件。电子器件具有：阵列基板,具备第1电极及第2电极；第1连接部件,设在上述第1电极之上；第1LED芯片,安装在上述第1连接部件之上；第2连接部件,设在上述第2电极之上,比上述第1连接部件厚；以及第2LED芯片,安装在上述第2连接部件之上。从上述阵列基板的基准面到上述第2连接部件的上表面的距离大于从上述基准面到上述第1连接部件的上表面的距离。(Provided is an electronic device having a high degree of freedom in design and manufacturing processes. The electronic device has: an array substrate provided with a 1 st electrode and a 2 nd electrode; a 1 st connecting member provided on the 1 st electrode; a 1 st LED chip mounted on the 1 st connecting member; a 2 nd connecting member provided on the 2 nd electrode and thicker than the 1 st connecting member; and a 2 nd LED chip mounted on the 2 nd connecting member. A distance from a reference surface of the array substrate to an upper surface of the 2 nd connecting member is greater than a distance from the reference surface to an upper surface of the 1 st connecting member.)

1. An electronic device, characterized in that,

comprising:

an array substrate provided with a 1 st electrode and a 2 nd electrode;

a 1 st connecting member provided on the 1 st electrode;

a 1 st LED chip mounted on the 1 st connecting member;

a 2 nd connecting member provided on the 2 nd electrode and thicker than the 1 st connecting member; and

a 2 nd LED chip mounted on the 2 nd connecting member;

a distance from a reference surface of the array substrate to an upper surface of the 2 nd connecting member is greater than a distance from the reference surface to an upper surface of the 1 st connecting member.

2. The electronic device of claim 1,

the 1 st LED chip emits light in a color different from that of the 2 nd LED chip.

3. The electronic device of claim 2,

further comprising:

a 3 rd connecting member thicker than both the 1 st connecting member and the 2 nd connecting member; and

a 3 rd LED chip mounted on the 3 rd connecting member, for emitting light in a color different from that of both the 1 st LED chip and the 2 nd LED chip;

the array substrate is also provided with a 3 rd electrode;

the 3 rd connecting member is provided on the 3 rd electrode.

4. The electronic device of claim 1,

the 2 nd connecting member is thicker than the 1 st connecting member by 1 μm or more.

5. The electronic device of claim 3,

the 3 rd connecting member is thicker than the 2 nd connecting member by 1 μm or more.

6. The electronic device according to any one of claims 1 to 5,

the 1 st link member and the 2 nd link member include organic matter.

7. The electronic device according to any one of claims 1 to 5,

the amount of organic material contained in the 1 st connecting member and the 2 nd connecting member is greater than the amount of organic material contained in the 1 st electrode and the 2 nd electrode.

8. The electronic device of claim 1,

the array substrate is also provided with an insulating layer;

the 1 st electrode and the 2 nd electrode are respectively in contact with the insulating layer.

9. The electronic device of claim 3,

the array substrate is also provided with an insulating layer;

the 1 st electrode, the 2 nd electrode, and the 3 rd electrode are in contact with the insulating layer, respectively.

10. A method of manufacturing an electronic device, characterized in that,

forming an array substrate comprising a 1 st electrode and a 2 nd electrode;

forming a 1 st connecting member on the 1 st electrode;

forming a 2 nd connecting member thicker than the 1 st connecting member on the 2 nd electrode such that a distance from a reference surface of the array substrate to an upper surface of the 2 nd connecting member is greater than a distance from the reference surface to the upper surface of the 1 st connecting member;

mounting a 1 st LED chip on the 1 st connecting member;

and a 2 nd LED chip is mounted on the 2 nd connecting part.

11. A method of manufacturing an electronic device, characterized in that,

forming an array substrate comprising a 1 st electrode and a 2 nd electrode;

forming a 1 st connecting member on the 1 st electrode;

forming a 2 nd connecting member on the 2 nd electrode;

mounting a 1 st LED chip on the 1 st connecting member;

mounting a 2 nd LED chip on the 2 nd connecting member;

detaching the 2 nd LED chip from the 2 nd electrode;

forming a repair connection member thicker than the 1 st connection member on the 2 nd electrode such that a distance from a reference surface of the array substrate to an upper surface of the repair connection member is greater than a distance from the reference surface to the upper surface of the 1 st connection member;

and a repair LED chip emitting light in the same color as the No. 2LED chip is formed on the repair connection member.

12. An electronic device, characterized in that,

comprising:

an array substrate provided with a 1 st electrode and a 2 nd electrode;

a 1 st connecting member provided on the 1 st electrode;

a 1 st electronic component mounted on the 1 st connecting member;

a 2 nd connecting member provided on the 2 nd electrode and thicker than the 1 st connecting member; and

a 2 nd electronic component mounted on the 2 nd connecting member;

a distance from a reference surface of the array substrate to an upper surface of the 2 nd connecting member is greater than a distance from the reference surface to an upper surface of the 1 st connecting member.

13. The electronic device of claim 12,

further comprising:

a 3 rd connecting member thicker than both the 1 st connecting member and the 2 nd connecting member; and

a 3 rd electronic component mounted on the 3 rd connecting member;

the array substrate is also provided with a 3 rd electrode;

the 3 rd connecting member is provided on the 3 rd electrode.

14. The electronic device of claim 13,

further comprising:

a 4 th connection member thicker than the 1 st connection member, the 2 nd connection member, and the 3 rd connection member; and

a 4 th electronic component mounted on the 4 th connecting member;

the array substrate further includes a 4 th electrode, and the 4 th connecting member is provided on the 4 th electrode.

15. The electronic device of claim 14,

the 1 st electronic component, the 2 nd electronic component and the 3 rd electronic component are LED chips emitting different colors, respectively;

the 4 th electronic component is an LED chip emitting the same color as any one of the 1 st to 3 rd electronic components.

16. The electronic device of claim 14,

the 1 st electronic component, the 2 nd electronic component and the 3 rd electronic component are LED chips emitting different colors, respectively;

the 4 th electronic component is an optical sensor.

Technical Field

One embodiment of the present invention relates to an electronic device and a method for manufacturing the electronic device. In particular, one embodiment of the present invention relates to a display device as an electronic device on which an electronic component including an LED chip is mounted, and a method for manufacturing the display device.

Background

In small and medium-sized display devices such as smart phones, display devices using liquid crystal or oled (organic Light Emitting diode) have been commercialized. In particular, an OLED display device using an OLED as a self-light-emitting element has advantages of high contrast and no need for a backlight, as compared with a liquid crystal display device. However, since the OLED is composed of an organic compound, it is difficult to secure high reliability of the OLED display device due to deterioration of the organic compound.

In recent years, as a next-generation display device, development of a so-called micro LED display device (or mini LED display device) in which a micro LED chip is mounted in a pixel circuit of a circuit board has been advanced (for example, japanese unexamined patent publication No. 2018-508972). The LED is a self-luminous element similar to the OLED, but is composed of an inorganic compound containing gallium (Ga), indium (In), and the like, unlike the OLED. Thus, the micro LED display device easily ensures high reliability as compared with the OLED display device. Further, the LED chip has higher luminous efficiency and luminance than the OLED display device. Therefore, the micro LED display device is expected as a next generation display device with high reliability, high luminance, and high contrast.

Unlike the method of manufacturing the OLED display device, the method of manufacturing the micro LED display device includes a step of mounting an LED chip. In the pixel, a connection member for mounting an LED chip is provided on the pixel electrode. The LED chip is electrically connected to the pixel electrode via a connecting member and fixed to the pixel electrode. In the micro LED display device, LED chips emitting light in the same color are mounted. That is, for example, first, a red LED chip is mounted in the pixel region, and then a green LED chip is mounted in the region. The distance between the red LED chip and the green LED chip in the adjoining pixel is very short. Therefore, for example, in the case where a green LED chip is mounted in an area beside a red LED chip after the red LED chip is mounted, there is a case where a component for mounting the green LED chip interferes with the red LED chip already mounted. To avoid this interference, japanese patent application laid-open No. 2018-508972 discloses a technique of adjusting the step shape of a backplane substrate (array substrate) or the thickness of a connection pad to which a conductive adhesive structure is connected, in accordance with a pixel.

However, in the technique disclosed in japanese patent application laid-open No. 2018-508972, the step shape or the thickness of the connection pad can be adjusted only in a predetermined pixel. That is, the step shape or the thickness of the connection pad needs to be adjusted at the design stage of the display device or the manufacturing stage of the array substrate. Therefore, there is a problem that the degree of freedom in the manufacturing process after the formation of the array substrate is small.

For example, when a defect such as a bright spot or a dark spot is confirmed after the production of the micro LED display device, the defect can be repaired (repaired) by replacing the LED chip provided in the pixel in which the defect is confirmed. When a new LED chip is mounted on a pixel to be repaired, it is necessary to avoid interference with the LED chips arranged in the surrounding pixels. According to japanese patent application laid-open No. 2018-508972, the degree of freedom in the manufacturing process after the formation of the array substrate is small, and thus such a situation cannot be dealt with.

Disclosure of Invention

In view of the above problems, an object of the present invention is to provide an electronic device having a high degree of freedom in design and manufacturing method.

Means for solving the problems

An electronic device according to an embodiment of the present invention includes: an array substrate provided with a 1 st electrode and a 2 nd electrode; a 1 st connecting member provided on the 1 st electrode; a 1 st LED chip mounted on the 1 st connecting member; a 2 nd connecting member provided on the 2 nd electrode and thicker than the 1 st connecting member; and a 2 nd LED chip mounted on the 2 nd connecting member. A distance from a reference surface of the array substrate to an upper surface of the 2 nd connecting member is greater than a distance from the reference surface to an upper surface of the 1 st connecting member.

In a method for manufacturing an electronic device according to an embodiment of the present invention, an array substrate including a 1 st electrode and a 2 nd electrode is formed, a 1 st connection member is formed on the 1 st electrode, a 2 nd connection member thicker than the 1 st connection member is formed on the 2 nd electrode such that a distance from a reference surface of the array substrate to an upper surface of the 2 nd connection member is greater than a distance from the reference surface to the upper surface of the 1 st connection member, a 1 st LED chip is mounted on the 1 st connection member, and a 2 nd LED chip is mounted on the 2 nd connection member.

In a method of manufacturing an electronic device according to an embodiment of the present invention, an array substrate including a 1 st electrode and a 2 nd electrode is formed, a 1 st connection member is formed on the 1 st electrode, a 2 nd connection member is formed on the 2 nd electrode, a 1 st LED chip is mounted on the 1 st connection member, a 2 nd LED chip is mounted on the 2 nd connection member, the 2 nd LED chip is detached from the 2 nd electrode, a repair connection member thicker than the 1 st connection member is formed on the 2 nd electrode such that a distance from a reference surface of the array substrate to an upper surface of the repair connection member is larger than a distance from the reference surface to the upper surface of the 1 st connection member, and a repair LED chip emitting light in the same color as the 2 nd LED chip is formed on the repair connection member.

An electronic device according to an embodiment of the present invention includes: an array substrate provided with a 1 st electrode and a 2 nd electrode; a 1 st connecting member provided on the 1 st electrode; a 1 st electronic component mounted on the 1 st connecting member; a 2 nd connecting member provided on the 2 nd electrode and thicker than the 1 st connecting member; and a 2 nd electronic component mounted on the 2 nd connecting member. A distance from a reference surface of the array substrate to an upper surface of the 2 nd connecting member is greater than a distance from the reference surface to an upper surface of the 1 st connecting member.

Drawings

Fig. 1 is a schematic cross-sectional view showing a display device according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view showing a method of manufacturing a display device according to an embodiment of the present invention.

Fig. 3 is a cross-sectional view showing a method of manufacturing a display device according to an embodiment of the present invention.

Fig. 4 is a cross-sectional view showing a method of manufacturing a display device according to an embodiment of the present invention.

Fig. 5 is a sectional view showing a method of manufacturing a display device according to an embodiment of the present invention.

Fig. 6 is a cross-sectional view showing a method of manufacturing a display device according to an embodiment of the present invention.

Fig. 7 is a sectional view showing a repairing method of a display device according to an embodiment of the present invention.

Fig. 8 is a sectional view showing a repairing method of a display device according to an embodiment of the present invention.

Fig. 9 is a sectional view showing a repairing method of a display device according to an embodiment of the present invention.

Fig. 10A is a sectional view showing a repairing method of a display device according to an embodiment of the present invention.

Fig. 10B is a schematic cross-sectional view of a display device to which repair has been applied according to an embodiment of the present invention.

Fig. 11 is a plan view showing the entire structure of a display device according to an embodiment of the present invention.

Fig. 12 is a block diagram showing a circuit configuration of a display device according to an embodiment of the present invention.

Fig. 13 is a circuit diagram showing a pixel circuit of a display device according to an embodiment of the present invention.

Fig. 14 is a sectional view of a display device according to an embodiment of the present invention.

Description of the reference numerals

10: a display device; 22B: a display area; 24B: a peripheral region; 26B: a terminal area; 100: an array substrate; 101: the 1 st surface; 103: the 2 nd surface; 105B: the 3 rd surface; 109: a reference plane; 110B: a pixel circuit; 120: an insulating layer; 190: a pixel electrode; 191: a 1 st pixel electrode; 193: a 2 nd pixel electrode; 195: a 3 rd pixel electrode; 200: an LED chip; 201: 1 st LED chip; 203: a 2 nd LED chip; 205: a 3 rd LED chip; 207A: repairing the LED chip; 250: a connecting member; 251: 1 st connecting member; 253: a 2 nd connecting member; 255: a 3 rd connecting member; 260A: a connecting member; 261A: 1 st connecting member; 263A: a 2 nd connecting member; 265A: a 3 rd connecting member; 270A: repairing the connecting part; 300B: a transistor; 305B: an insulating substrate; 310B: a base layer; 320B: a semiconductor layer; 330B: a gate insulating layer; 340B: a gate electrode; 350B: an insulating layer; 400B: a wiring section; 402B, 403B, 406B, 410B, 411B, 414B, 416B, 420B: a conductive layer; 404B, 418B: a planarization layer; 408B: an insulating layer; 422B, 424B, 426B, 428B, 430B: an opening; 480B: region 1; 490B: a 2 nd region; 520B: a source driver circuit; 521B: a source wiring; 530B: a gate drive circuit; 531B: a gate wiring; 533B: a terminal portion; 541B: connecting wiring; 600B: a flexible printed circuit substrate; 700B: an IC chip; 960B: a drive transistor; 961B: an anode power supply line; 963B: a cathode power supply line; 970B: a selection transistor; 971B: a signal line; 973B: a gate line; 980B: a holding capacitance.

Detailed Description

Embodiments of the present invention will be described below with reference to the drawings. The following disclosure is merely an example. It is needless to say that a structure which can be easily conceived by those skilled in the art by appropriately changing the structure of the embodiment while maintaining the gist of the invention is included in the scope of the invention. In order to clarify the description, the drawings may schematically show the width, thickness, shape, and the like of each part as compared with the actual form. However, the illustrated shape is merely an example, and does not limit the explanation of the present invention. In the present specification and the drawings, the same elements as those described with respect to the preceding drawings are denoted by the same reference numerals and letters, and detailed description thereof may be omitted as appropriate.

In each embodiment of the present invention, a direction from the array substrate toward the LED chip is referred to as up or above. In contrast, a direction from the LED chip toward the array substrate is referred to as downward or below. As described above, the description is made using the terms upper or lower for the convenience of description, but for example, the array substrate and the LED chip may be arranged in a manner such that the vertical relationship therebetween is reversed from that shown in the drawings. In the following description, for example, the expression of the LED chip on the array substrate is merely that the vertical relationship between the array substrate and the LED chip is described as described above, and other members may be arranged between the array substrate and the LED chip. The upper or lower portion refers to a stacking order in a structure in which a plurality of layers are stacked, and when a pixel electrode above a transistor is represented, the transistor and the pixel electrode may not overlap in a plan view. On the other hand, the pixel electrode vertically above the transistor is a positional relationship in which the transistor and the pixel electrode overlap each other in a plan view.

In the present specification, expressions such as "α includes A, B or C", "α includes either A, B or C", and "α includes one selected from the group consisting of A, B and C" do not exclude a case where a plurality of combinations of a to C are included in α unless otherwise specified. Further, these expressions do not exclude the case where α includes other elements.

The following embodiments can be combined with each other as long as no technical contradiction occurs.

In the following embodiments, a display device having LED chips mounted thereon is described as an example, but the embodiments of the present invention are not limited to the display device. For example, the embodiment of the present invention can be applied to an electronic device provided with other electronic components such as an optical sensor instead of or in addition to the LED chip. In the following description, the 1 st LED chip, the 2 nd LED chip, and the 3 rd LED chip are examples of the 1 st electronic component, the 2 nd electronic component, and the 3 rd electronic component to which the present embodiment can be applied. The 1 st to 3 rd electronic components may be light sensors for sensing different colors, may be sensors having different functions, or may be electronic components other than the sensors.

< embodiment 1 >

[ Structure of display device 10 ]

A display device 10 according to an embodiment of the present invention will be described with reference to fig. 1. In fig. 1, a part of a pixel structure of a display device 10 is illustrated. Fig. 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. As shown in fig. 1, the display device 10 includes an array substrate 100, a connection member 250, and an LED chip 200. The array substrate 100 includes a 1 st surface 101 and a 2 nd surface 103. The 1 st surface 101 and the 2 nd surface 103 are opposite surfaces. The array substrate 100 has a reference surface 109. In the present embodiment, the reference surface 109 is a surface (upper surface) of an insulating substrate (e.g., an insulating substrate 305B in fig. 14) included in the array substrate 100. However, the reference surface 109 may be a back surface (lower surface) of the insulating substrate. The reference surface 109 may be not only an actually existing flat surface such as the upper surface or the lower surface of the insulating substrate described above, but also a flat virtual plane defined in the array substrate 100.

The array substrate 100 includes an insulating layer 120 and a pixel electrode 190 on the 1 st surface 101 side. The pixel electrode 190 is in contact with the insulating layer 120. The pixel electrode 190 is a part of a wiring provided in a pixel circuit (corresponding to the pixel circuit 110B in fig. 11), and will be described in detail later. That is, although not shown in fig. 1, the array substrate 100 includes transistors and wirings provided on an insulating substrate. The pixel electrode 190 includes a 1 st pixel electrode 191, a 2 nd pixel electrode 193, and a 3 rd pixel electrode 195. The 1 st pixel electrode 191, the 2 nd pixel electrode 193, and the 3 rd pixel electrode 195 are in contact with the same insulating layer 120 and have the same thickness. That is, the 1 st pixel electrode 191, the 2 nd pixel electrode 193, and the 3 rd pixel electrode 195 are the same layer. The same layer means that a plurality of components are formed by patterning 1 layer. That is, the expression that the 1 st pixel electrode 191, the 2 nd pixel electrode 193, and the 3 rd pixel electrode 195 have the same thickness means that the thicknesses of these pixel electrodes are within the range of variation in film thickness in the substrate surface of the layer that is the base of these pixel electrodes. That is, the appearance that the thicknesses of the pixel electrodes are the same does not require that the thicknesses of the pixel electrodes are necessarily exactly the same. These pixel electrodes are collectively referred to as a pixel electrode 190 without particularly distinguishing them.

A connection member 250 is disposed over the pixel electrode 190. The connection member 250 connects the pixel electrode 190 with the LED chip 200. The connection member 250 includes a 1 st connection member 251, a 2 nd connection member 253, and a 3 rd connection member 255. The 1 st connecting member 251 is disposed on the 1 st pixel electrode 191. The 2 nd connecting part 253 is disposed over the 2 nd pixel electrode 193. The 3 rd connection part 255 is disposed on the 3 rd pixel electrode 195. In the case where it is not necessary to particularly distinguish the above-mentioned 3 connection members, they are collectively referred to as a connection member 250.

The 2 nd connecting part 253 is thicker than the 1 st connecting part 251. The 3 rd connecting member 255 is thicker than both the 1 st connecting member 251 and the 2 nd connecting member 253. The difference between the thickness of the 2 nd connecting member 253 and the thickness of the 1 st connecting member 251 exceeds the range of thickness deviation of each connecting member. For example, a standard deviation of thicknesses of the plurality of 2 nd connecting members 253 provided on the array substrate 100 is defined as σ₂The standard deviation of the thicknesses of the plurality of 1 st connecting members 251 is set as σ₁In the case of (1), from + -3 sigma₂The sum of the ranges indicated by. + -. 3. sigma₁The indicated ranges do not overlap. Specifically, the 2 nd connecting member 253 is thicker than the 1 st connecting member 251 by 300nm or more and 500nmAbove, 1 μm or above, or 2 μm or above. Similarly, the difference between the thickness of the 3 rd link 255 and the thickness of the 2 nd link 253 exceeds the range of the respective thickness deviations. For example, the standard deviation of the thicknesses of the plurality of 3 rd connecting members 255 is σ₃In the case of (1), from + -3 sigma₃The sum of the ranges indicated by. + -. 3. sigma₂The indicated ranges do not overlap. Specifically, the 3 rd connecting member 255 is thicker than the 2 nd connecting member 253 by 300nm or more, 500nm or more, 1 μm or more, or 2 μm or more.

A distance from the reference surface 109 to the upper surface of the 2 nd connecting part 253 is greater than a distance from the reference surface 109 to the upper surface of the 1 st connecting part 251. In other words, the upper surface of the 2 nd connecting member 253 is positioned above the upper surface of the 1 st connecting member 251 in the vertical direction (or the vertical direction). A distance from the reference surface 109 to the upper surface of the 3 rd connecting part 255 is greater than a distance from the reference surface 109 to the upper surface of the 2 nd connecting part 253. In other words, the upper surface of the 3 rd link 255 is located above the upper surface of the 2 nd link 253 in the vertical direction.

The LED chip 200 is mounted on the connection member 250. The LED chip 200 includes a 1 st LED chip 201, a 2 nd LED chip 203, and a 3 rd LED chip 205. The 1 st LED chip 201 is mounted on the 1 st connection member 251. The 2 nd LED chip 203 is mounted on the 2 nd connecting member 253. The 3 rd LED chip 205 is mounted on the 3 rd connecting member 255. The 3LED chips emit light in different colors. However, the LED chips may emit light in the same color. In the case where it is not necessary to particularly distinguish the above-described 3LED chips, they are collectively referred to as an LED chip 200.

A distance from the reference surface 109 to a contact surface (or a contact point) between the 2 nd connecting member 253 and the 2 nd LED chip 203 is greater than a distance from the reference surface 109 to a contact surface (or a contact point) between the 1 st connecting member 251 and the 1 st LED chip 201. In other words, the distance from the reference surface 109 to the lower surface of the 2 nd LED chip 203 is larger than the distance from the reference surface 109 to the lower surface of the 1 st LED chip 201.

In the present embodiment, an anode electrode is provided at the lower portion of the LED chip 200, and a cathode electrode is provided at the upper portion of the LED chip 200. The anode electrode of the LED chip 200 is connected to the connection member 250. Although not shown in fig. 1, the cathode electrode of the LED chip 200 is connected to a conductive layer (e.g., a conductive layer 420B (see fig. 14) described later) provided above the cathode electrode. The LED chip 200 emits light by a current flowing in the LED chip 200 from the anode electrode toward the cathode electrode. In this embodiment, the LED chip 200 emits light upward. A reflective member is provided on a side wall of the LED chip 200. The reflecting member is inclined so that the inclined surface faces upward, and reflects light emitted laterally from the light emitting portion of the LED chip 200 upward. The pixel electrode 190 functions as a reflecting member, and reflects light emitted from the LED chip 200 toward the array substrate 100 upward. The LED chip 200 is not limited to the above-described structure, and may have a structure in which a reflective member is not formed on a side wall. The LED chip 200 may be a flip-chip type LED chip having an anode electrode and a cathode electrode provided on the lower portion thereof.

[ Material of Components of display device 10 ]

As the insulating substrate (for example, the insulating substrate 305B in fig. 14) of the array substrate 100, a substrate having light transmittance such as a glass substrate, a quartz substrate, or a plastic substrate (resin substrate) can be used. As the plastic substrate, a substrate having flexibility such as a polyimide substrate, an acrylic substrate, a silicone substrate, or a fluororesin substrate can be used. When a conductive substrate is used for the array substrate 100, a metal substrate such as a stainless steel substrate or an aluminum substrate can be used as the conductive substrate. When a conductive substrate is used for the array substrate 100, an insulating layer may be formed on the surface of the conductive substrate. In addition to the insulating substrate and the conductive substrate, a semiconductor substrate such as a silicon substrate, a silicon carbide substrate, or a compound semiconductor substrate may be used for the array substrate 100.

The pixel electrode 190 functions as a pad for forming the connection member 250 for mounting the LED chip 200. As the pixel electrode 190, for example, aluminum (Al), titanium (Ti), tin (Sn), chromium (Cr), cobalt (Co), nickel (Ni), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten (W), bismuth (Bi), silver (Ag), copper (Cu), platinum (Pt), gold (Au), and an alloy or a compound thereof are used. As the pixel electrode 190, the above materials may be used in a single layer or stacked layers. When the LED chip 200 emits light downward, a transparent conductive film may be used as the pixel electrode 190. Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO) can be used as the transparent conductive film.

The connection member 250 functions as a connection member for mounting the LED chip 200 to the pixel electrode 190. As the connection member 250, for example, silver paste, solder (Sn), paste containing metal nanoparticles, or Anisotropic Conductive Film (ACF) may be used. For example, when a paste containing metal nanoparticles is used as the connecting member 250, the connecting member 250 after firing contains an organic substance as well as after coating. On the other hand, the pixel electrode 190 does not contain an organic substance. Even if an organic matter is contained as an impurity in the pixel electrode 190, the amount of the organic matter contained in the connection member 250 is larger than the amount of the organic matter contained in the pixel electrode 190. However, the amount of organic material included in the pixel electrode 190 may be the same as the amount of organic material included in the connection member 250.

As the insulating layer 120, an organic insulating material such as polyimide resin, acrylic resin, epoxy resin, silicone resin, fluorine resin, or siloxane resin can be used. As the insulating layer 120, not only an organic insulating material but also an inorganic insulating material may be used. As the inorganic insulating material, silicon oxide (SiO) can be used_x) Silicon nitride oxide (SiO)_xN_y) Silicon nitride (SiN)_x) Silicon nitride oxide (SiN)_xO_y) Aluminum oxide (AlO)_x) Aluminum oxide nitride (AlO)_xN_y) Aluminum nitride oxide (AlN)_xO_y) Or aluminum nitride (AlN)_x) And the like inorganic insulating materials. SiO 2_xN_yAnd AlO_xN_yAre silicon compounds and aluminum compounds containing nitrogen (N) in a smaller amount than oxygen (O). SiN_xO_yAnd AlN_xO_yAre silicon compounds and aluminum compounds containing oxygen in a smaller amount than nitrogen. As the insulating layer 120, an inorganic insulating layer material and an organic insulating material may be used separately, or they may be stacked.

[ method for manufacturing display device 10 ]

A method for manufacturing the display device 10 will be described with reference to fig. 2 to 6. Fig. 2 to 6 are cross-sectional views showing a method of manufacturing a display device according to an embodiment of the present invention.

As shown in fig. 2, a 1 st pixel electrode 191, a 2 nd pixel electrode 193, and a 3 rd pixel electrode 195 are formed on the 1 st surface 101 side of the array substrate 100 so as to contact the insulating layer 120. A conductive layer which is a base of the pixel electrode 190 is formed on the entire surface of an effective region (a region where a functional element or a wiring is formed) of the array substrate 100, and the conductive layer is patterned by a photolithography step to form the pixel electrode 190. As described above, the 1 st pixel electrode 191, the 2 nd pixel electrode 193, and the 3 rd pixel electrode 195 are formed by patterning the same conductive layer. Therefore, the film thickness of each pixel electrode is substantially the same within the range of in-plane variation of the conductive layer formed on the entire surface.

As a method for forming a conductive layer which forms the basis of the pixel electrode 190, a Physical Vapor Deposition (PVD) method is used. However, as the film forming method, a Chemical Vapor Deposition method (Chemical Vapor Deposition: CVD method) may be used. As the PVD method, a sputtering method, a vacuum deposition method, an electron beam deposition method, or the like is used. As the CVD method, a thermal CVD method, a plasma CVD method, a catalytic CVD method (cat (catalytic) -CVD method, a hot-wire CVD method), or the like is used.

As shown in fig. 3, the 1 st connection part 251 is formed on the 1 st pixel electrode 191, the 2 nd connection part 253 is formed on the 2 nd pixel electrode 193, and the 3 rd connection part 255 is formed on the 3 rd pixel electrode 195. The 1 st link member 251, the 2 nd link member 253, and the 3 rd link member 255 are formed to have different thicknesses. Specifically, the 2 nd connection member 253 is formed thicker than the 1 st connection member 251, and the 3 rd connection member 255 is formed thicker than the 2 nd connection member 253. The 1 st link 251, the 2 nd link 253, and the 3 rd link 255 are formed as follows. A distance from the reference surface 109 to the upper surface of the 2 nd connecting part 253 is greater than a distance from the reference surface 109 to the upper surface of the 1 st connecting part 251. A distance from the reference surface 109 to the upper surface of the 3 rd connecting part 255 is greater than a distance from the reference surface 109 to the upper surface of the 2 nd connecting part 253. These connection members 250 can be formed by a micro dispensing method, an ink jet method, a pin transfer method, a mask vapor deposition method, a mask sputtering method, an acf (anisotropic Conductive Film)/NCF (Non-Conductive Film) bonding method, a plating method, or a printing method.

As shown in fig. 4, the 1 st LED chip 201 is mounted over the 1 st connecting member 251. For example, when the 1 st LED chip 201 is a red LED chip, the 1 st LED chip 201 is mounted on a plurality of red pixels disposed on the entire surface of the array substrate 100.

Next, as shown in fig. 5, the 2 nd LED chip 203 is mounted on the 2 nd connecting member 253. For example, when the 2 nd LED chip 203 is a green LED chip, the 2 nd LED chip 203 is mounted on a plurality of green pixels disposed on the entire surface of the array substrate 100. In this case, since the 2 nd connecting member 253 is thicker than the 1 st connecting member 251, the upper surface of the 2 nd LED chip 203 is located above the upper surface of the 1 st LED chip 201 in a state where the 2 nd LED chip 203 is in contact with the 2 nd connecting member 253. Thus, interference with the 1 st LED chip 201 can be avoided when the 2 nd LED chip 203 is mounted.

Next, as shown in fig. 6, the 3 rd LED chip 205 is mounted on the 3 rd connecting member 255. For example, when the 3 rd LED chip 205 is a blue LED chip, the 3 rd LED chip 205 is mounted on a plurality of blue pixels disposed on the entire surface of the array substrate 100. In this case, since the 3 rd connecting member 255 is thicker than both the 1 st connecting member 251 and the 2 nd connecting member 253, the upper surface of the 3 rd LED chip 205 is located above the upper surfaces of the 1 st LED chip 201 and the 2 nd LED chip 203 in a state where the 3 rd LED chip 205 is in contact with the 3 rd connecting member 255. Therefore, interference with the 1 st LED chip 201 and the 2 nd LED chip 203 can be avoided when the 3 rd LED chip 205 is mounted.

As described above, according to the display device 10 of the present embodiment, the thickness of the connecting member is different, so that when the LED chip is mounted, interference with another LED chip already mounted in the periphery can be avoided. Since the thickness of the connection member 250 can be adjusted in the process of forming the connection member 250 after the array substrate 100 is formed, the degree of freedom in the design and manufacturing method of the process after the array substrate 100 is formed is improved.

< embodiment 2 >

A display device 10A and a method for manufacturing the same according to an embodiment of the present invention will be described with reference to fig. 7 to 10B. In this embodiment, a method of repairing an LED chip of a pixel in which a defect has occurred when the defect of the pixel is confirmed after the display device 10A is manufactured will be described. Fig. 7 to 7 are sectional views showing a repairing method of a display device according to an embodiment of the present invention. In the following description of the display device 10A, the same features as those of the display device 10 of embodiment 1 described with reference to fig. 1 to 6 will be omitted, and the differences from the display device 10 will be mainly described.

[ method for manufacturing display device 10A ]

As shown in fig. 7, the 1 st LED chip 201A is mounted on the 1 st pixel electrode 191A via the 1 st connecting member 261A. The 2 nd LED chip 203A is mounted on the 2 nd pixel electrode 193A via the 2 nd connecting member 263A. The 3 rd LED chip 205A is mounted on the 3 rd pixel electrode 195A via the 3 rd connection member 265A. In the case where it is not necessary to particularly distinguish the above-mentioned 3 connection members, they are collectively referred to as a connection member 260A. In the present embodiment, the thickness of each of the 1 st link 261A, the 2 nd link 263A, and the 3 rd link 265A is the same. In this embodiment, a case where the 2 nd LED chip 203A does not emit light and needs to be repaired will be described.

As shown in fig. 8, the 2 nd LED chip 203A is pulled upward, and the 2 nd LED chip 203A is detached from the 2 nd pixel electrode 193A. In the example of fig. 8, the 2 nd connecting member 263A is peeled off from the 2 nd pixel electrode 193A together with the 2 nd LED chip 203A. However, this is merely an example, and the 2 nd connecting member 263A may be left on the 2 nd pixel electrode 193A.

As shown in fig. 9, a repair connection member 270A is formed on the 2 nd pixel electrode 193A after the 2 nd LED chip 203A is detached. The repair link 270A is thicker than the 1 st link 261A, the 2 nd link 263A, and the 3 rd link 265A. The repair connection member 270A is formed such that the distance from the reference surface 109A to the upper surface of the repair connection member 270A is greater than the distance from the reference surface 109A to the upper surface of the 1 st connection member 261A (or the 3 rd connection member 265A). Further, a repair LED chip 207A is mounted on the repair connection member 270A. The repair LED chip 207A is an LED chip that emits light in a color that should be obtained when the 2 nd LED chip 203A normally emits light.

By performing the repair work as described above, the 2 nd LED chip 203A having the light emission defect is replaced with the repair LED chip 207A, and the display device 10A shown in fig. 10A is completed.

As described above, according to the display device 10A of the present embodiment, the repair connection member 270A is thicker than the connection members around it, and thus, when the repair LED chip 207A is mounted, interference with other LED chips already mounted around it can be avoided.

In the present embodiment, the structure in which the thickness of the plurality of connection members 260A before repair is the same is exemplified, but the structure is not limited to this. For example, as in embodiment 1, the thicknesses of the plurality of connection members before repair may be different. In this case, the thickness of the repair LED chip 207A is preferably thicker than the difference between the thickest connecting member and the thinnest connecting member. Instead of forming the repair connection member 270A above the 2 nd pixel electrode 193A, the repair LED chip 207A may be formed above the 2 nd pixel electrode 193A in a state where a member corresponding to the repair connection member 270A is formed on the lower surface of the repair LED chip 207A.

The following description deals with the case where the above-described repair is performed on the display device 10 provided with the 1 st LED chip 201 as a red LED chip, the 2 nd LED chip 203 as a green LED chip, and the 3 rd LED chip 205 as a blue LED chip, as in the 1 st embodiment shown in fig. 1. In this case, the thickness of the connecting members 251, 253, 255 differs according to the emission color of each LED. In the case of repairing such a display device 10, the thickness of the repair connection member 270A is larger than the thickest connection member (the connection member 255 in the example of fig. 10B) of the connection members 251, 253, and 255. An example of this is shown in FIG. 10B, namely: in a certain pixel, the 1 st LED chip 201 is repaired, and a repair LED chip 207A is arranged via a repair connection member 270A instead of the 1 st LED chip 201. The repair LED chip 207A in fig. 10B is sometimes referred to as a 4 th LED chip (or a 4 th electronic part). The repair connection member 270A is sometimes referred to as a 4 th connection member.

The repaired LED chip 207A in fig. 10B is red. As described above, when the display device 10 provided with the 3 connection members 251, 253, and 255 having different thicknesses is repaired, as shown in fig. 10B, the display device is configured to be provided with the 4 connection members (the connection members 251, 253, and 255 and the repair connection member 270A) having different thicknesses. When the repair is performed for each color of the LED, 3 repair connection members (a red repair connection member, a green repair connection member, and a blue repair connection member) having different thicknesses may be provided. In this case, in the display device 10, 6 connection members (connection members 251, 253, 255, red repair connection member, green repair connection member, and blue repair connection member) having different thicknesses are provided. That is, a structure in which connecting members having different heights are provided for the same color LED is obtained.

< embodiment 3 >

The overall configuration of a display device according to an embodiment of the present invention will be described with reference to fig. 11 to 14. The display device 20B described in the following embodiment can be manufactured by applying the method for manufacturing the display device 10 according to embodiment 1 and the method for repairing the display device 10A according to embodiment 2.

[ outline of display device 20B ]

Fig. 11 is a plan view showing the entire structure of a display device according to an embodiment of the present invention. As shown in fig. 11, the display device 20B includes an array substrate 100B, a flexible printed circuit board 600B (FPC600B), and an IC chip 700B. The display device 20B is divided into a display region 22B, a peripheral region 24B, and a terminal region 26B. The display region 22B is a region where the pixel circuits 110B including the LED chips 200B are arranged in a matrix, and displays an image. The peripheral region 24B is a region around the display region 22B, and is a region where a driver circuit for controlling the pixel circuit 110B is provided. The terminal region 26B is a region where the FPC600B is provided. The side surface of the array substrate 100B at the outer edges of the peripheral region 24B and the terminal region 26B is the 3 rd surface 105B. The IC chip 700B is provided on the FPC 600B. The IC chip 700B supplies signals for driving the pixel circuits 110B. Not limited to the above example, the IC chip 700B may be a cog (chip on glass) structure mounted on the array substrate 100B.

[ Circuit Structure of display device 20B ]

Fig. 12 is a block diagram showing a circuit configuration of a display device according to an embodiment of the present invention. As shown in fig. 12, a source driver circuit 520B is provided at a position adjacent to the display region 22B in the 2 nd direction D2 (column direction) in which the pixel circuit 110B is disposed. The gate driver circuit 530B is provided at a position adjacent to the display region 22B in the 1 st direction D1 (row direction). The source driving circuit 520B and the gate driving circuit 530B are disposed in the peripheral region 24B. However, the region where the source driver circuit 520B and the gate driver circuit 530B are provided is not limited to the peripheral region 24B, and may be any region outside the region where the pixel circuit 110B is provided.

The source wiring 521B extends from the source driver circuit 520B in the 2 nd direction D2, and is connected to the plurality of pixel circuits 110B arranged in the 2 nd direction D2. The gate wiring 531B extends from the gate driver circuit 530B in the 1 st direction D1, and is connected to the plurality of pixel circuits 110B arranged in the 1 st direction D1.

Terminal portion 533B is provided in terminal region 26B. The terminal portion 533B and the source driver circuit 520B are connected by a connection wiring 541B. Similarly, the terminal portion 533B and the gate driver circuit 530B are connected by a connection wiring 541B. The FPC600B is connected to the terminal portion 533B, and an external device connected to the FPC600B is connected to the display device 20B. As a result, each pixel circuit 110B provided in the display device 20B is driven by a signal from an external device.

The display devices 10 and 10A according to embodiments 1 and 2 correspond to a part of the pixel circuit 110B of the display device 20B according to embodiment 3.

[ Pixel Circuit 110B of display device 20B ]

Fig. 13 is a circuit diagram showing a pixel circuit of a display device according to an embodiment of the present invention. As shown in fig. 13, the pixel circuit 110B includes elements such as a driving transistor 960B, a selection transistor 970B, a holding capacitor 980B, and an LED chip 200B. A source electrode of the selection transistor 970B is connected to the signal line 971B. The gate electrode of select transistor 970B is connected to gate line 973B. The source electrode of the driving transistor 960B is connected to an anode power supply line 961B. The drain electrode of the driving transistor 960B is connected to the anode of the LED chip 200B. The cathode of the LED chip 200B is connected to a cathode power supply line 963B. The gate electrode of the driving transistor 960B is connected to the drain electrode of the selection transistor 970B. The holding capacitor 980B is connected to the gate electrode and the drain electrode of the driving transistor 960B. The signal line 971B is supplied with a gradation signal that determines the light emission intensity of the LED chip 200B. The gate line 973B is supplied with a signal for selecting a pixel row to which the gradation signal is written.

[ Cross-sectional Structure of display device 20B ]

Fig. 14 is a cross-sectional view of a pixel circuit 110B of a display device 20B according to an embodiment of the present invention. As shown in fig. 14, the display device 20B includes a transistor 300B and a wiring portion 400B. The transistor 300B and the wiring portion 400B constitute a pixel circuit 110B.

The transistor 300B is provided on the insulating substrate 305B and the base layer 310B. In the present embodiment, the reference surface 109B is the upper surface of the insulating substrate 305B. The transistor 300B has a semiconductor layer 320B, a gate insulating layer 330B, a gate electrode 340B, an insulating layer 350B, and a conductive layer 402B (source and drain electrodes). The semiconductor layer 320B is disposed on the base layer 310B. The gate electrode 340B is disposed over the semiconductor layer 320B. The gate insulating layer 330B is disposed between the semiconductor layer 320B and the gate electrode 340B. An insulating layer 350B is disposed over the gate insulating layer 330B and the gate electrode 340B. The conductive layer 402B is disposed over the insulating layer 350B and is connected to the semiconductor layer 320B through an opening disposed in the insulating layer 350B.

The wiring portion 400B includes a conductive layer 402B, a conductive layer 403B, a planarization layer 404B, a conductive layer 406B, an insulating layer 408B, a conductive layer 410B, a conductive layer 411B, an insulating layer 120B, a conductive layer 414B, a conductive layer 416B, a pixel electrode 190B, and a connection member 250B. In the following description, a region where a wiring (connection member 250B) connected to the anode of the LED chip 200B is provided is referred to as a 1 st region 480B. A region where a wiring (the conductive layer 416B) connected to the cathode of the LED chip 200B is provided is referred to as a 2 nd region 490B.

A planarization layer 404B is disposed over the conductive layer 402B. In the planarization layer 404B, an opening 422B for exposing a part of the conductive layer 402B is provided in the 1 st region 480B, and an opening 424B for exposing a part of the conductive layer 403B is provided in the 2 nd region 490B. Conductive layer 406B is disposed over planarization layer 404B and is connected to conductive layer 403B through opening 424B. Insulating layer 408B is disposed over conductive layer 406B. In the insulating layer 408B, an opening is provided at a position corresponding to the opening 422B. The conductive layer 406B is supplied with, for example, a common power supply voltage PVDD.

The conductive layer 410B and the conductive layer 411B are provided over the insulating layer 408B. The conductive layer 410B is connected to the conductive layer 402B through the opening 422B. Conductive layer 411B is insulated from conductive layer 406B by insulating layer 408B. The conductive layer 411B is supplied with, for example, a common power supply voltage PVSS (for example, ground voltage GND).

An insulating layer 120B is provided over each of the conductive layer 410B and the conductive layer 411B. In the insulating layer 120B, an opening 426B for exposing the conductive layer 410B and an opening 428B for exposing the conductive layer 411B are provided. The pixel electrode 190B and the conductive layer 414B are provided in contact with the insulating layer 120B. As the insulating layer 120B, a planarization layer is used. The pixel electrode 190B is connected to the conductive layer 410B through the opening 426B. The conductive layer 414B is connected to the conductive layer 411B through the opening 428B.

The connection member 250B is disposed over the pixel electrode 190B. Conductive layer 416B is disposed over conductive layer 414B. The connection member 250B is used to mount the LED chip 200B to the wiring portion 400B. That is, the connection member 250B has a function of bonding the LED chip 200B and the pixel electrode 190B and electrically connecting them. The Conductive layer 416B is formed by a micro dispensing method, an ink jet method, a pin transfer method, a mask vapor deposition method, a mask sputtering method, an acf (anisotropic Conductive Film)/NCF (Non-Conductive Film) bonding method, or a printing method, in the same manner as the connecting member 250B.

A planarization layer 418B is provided on each of the connection member 250B and the conductive layer 416B so as to embed the LED chip 200B. In the planarization layer 418B, an opening 430B for exposing the conductive layer 416B is provided. The upper surface of the planarization layer 418B coincides with the upper surface of the LED chip 200B. The upper surface of the LED chip 200B may be exposed from the planarization layer 418B, and the upper surface of the planarization layer 418B may not coincide with the upper surface of the LED chip 200B. Over the planarization layer 418B is a conductive layer 420B. The conductive layer 420B is connected to the LED chip 200B. Conductive layer 420B is connected to conductive layer 416B through opening 430B.

The connection member 250B is connected to the anode of the LED chip 200B. The conductive layer 420B is connected to the cathode of the LED chip 200B. When an ON voltage for turning ON (ON) the transistor 300B is supplied to the gate electrode 340B, a voltage supplied to a signal line (not shown) is supplied to the anode of the LED chip 200B via the transistor 300B, the conductive layer 410B, the pixel electrode 190B, and the connection member 250B. The cathode of the LED chip 200B is connected to the conductive layer 411B via the conductive layers 420B, 416B, and 414B.

[ Material of Components of display device 20B ]

As each of the conductive layers constituting the transistor 300B and the wiring portion 400B and the gate electrode 340B, Al, Ti, Cr, Co, Ni, Mo, Hf, Ta, W, Bi, Ag, Cu, and alloys or compounds thereof are used. The conductive layer and the gate electrode may be formed using the above materials in a single layer or stacked layers. As each conductive layer constituting the wiring portion 400B, for example, a transparent conductive material such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO) may be used. In particular, a transparent conductive material is used as the conductive layer 420B. The pixel electrode 190B has a function of reflecting light emitted from the LED chip 200B toward the wiring portion 400B upward. Therefore, a material having a higher reflectance than the other conductive layers is used for the pixel electrode 190B.

Silicon oxide (SiO) is used as each of the insulating layer, the gate insulating layer 330B, and the base layer 310B constituting the transistor 300B and the wiring portion 400B_x) Silicon nitride oxide (SiO)_xN_y) Silicon nitride (SiN)_x) Silicon nitride oxide (SiN)_xO_y) Aluminum oxide (AlO)_x) Aluminum oxide nitride (AlO)_xN_y) Aluminum nitride oxide (AlN)_xO_y) Or aluminum nitride (AlN)_x) Iso-inorganicAn insulating material. As the insulating layer, not only an inorganic insulating material but also an organic insulating material may be used. As the organic insulating material, for example, polyimide resin, acrylic resin, epoxy resin, silicone resin, fluorine resin, siloxane resin, or the like is used. The insulating layer may be formed using an inorganic insulating layer material and an organic insulating layer material separately or stacked.

The planarization layers constituting the wiring portion 400B can alleviate the step of the unevenness formed by the structures located below the respective layers. As a material of the planarization layer, for example, an organic resin such as a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, a fluorine resin, or a siloxane resin is used. The organic resin may be used alone or in a stacked state as the planarization layer.

The embodiments described as embodiments of the present invention can be combined and implemented as appropriate as long as they are not contradictory to each other. The display device according to each embodiment is provided with a configuration in which a person skilled in the art appropriately performs addition, deletion, or design change of a component, or addition, deletion, or condition change of a process, and is included in the scope of the present invention as long as the person is in the spirit of the present invention. In the above-described embodiments, the LED chip is used as an example of the electronic component, but the electronic component is not limited to the LED chip. The LED chip may be replaced with other electronic components such as a photosensor. That is, the present invention is not limited to the display device, and can be applied to an electronic device in which other electronic components are mounted instead of or in addition to LEDs. Further, the present invention can be applied to an electronic device in which the repair LED207A is replaced with an electronic component such as a photosensor, or another electronic component is combined with a display device using an LED. In other words, in this case, the electronic component such as the optical sensor can be referred to as a 4 th electronic component.

It is needless to say that the present invention is not limited to the above embodiments, and various modifications and variations can be made without departing from the scope of the present invention.