阅读说明：本技术 一种中心对称的igbt多模块并联装置 (Centrosymmetric IGBT multi-module parallel device ) 是由 黄先进 刘宜鑫 王风川 高冠刚 陈澄 孙湖 于 2020-12-28 设计创作，主要内容包括：本发明涉及一种中心对称的IGBT多模块并联装置,包括多IGBT模块,叠层母排、散热板及支撑板,所述IGBT模块,叠层母排、散热板及支撑板构成紧凑STACK布局,实现了模块化设计,使大功率变流器的设计变得更加简单,所述叠层母排、散热板及支撑板的中心镂空设计优化了STACK散热性能,整体功率连接布局呈中心对称,降低了IGBT模块开关时产生的电磁耦合,另外通过叠层排的端子布局,不仅平衡了各电流支路的寄生阻抗,提高了各并联IGBT模块间的电流均衡度而且实现了可扩展性,使得STACK间的串并联更容易实现。(The invention relates to a centrosymmetric IGBT multi-module parallel device, which comprises a plurality of IGBT modules, a laminated busbar, a heat dissipation plate and a support plate, wherein the IGBT modules, the laminated busbar, the heat dissipation plate and the support plate form a compact STACK layout, so that a modular design is realized, the design of a high-power converter is simpler, the central hollow design of the laminated busbar, the heat dissipation plate and the support plate optimizes the STACK heat dissipation performance, the overall power connection layout is centrosymmetric, the electromagnetic coupling generated during the switching of the IGBT modules is reduced, in addition, the parasitic impedance of each current branch is balanced, the current balance among the parallel IGBT modules is improved, the expandability is realized, and the series-parallel connection among the STACK modules is easier to realize through the terminal layout of the laminated busbar.)

1. A centrosymmetric IGBT multi-module parallel device is characterized by comprising N IGBT modules (1), wherein N is more than 2;

when N IGBT modules (1) are horizontally placed, the centrosymmetric IGBT multi-module parallel device further comprises: the device comprises a laminated busbar (2) and an absorption capacitor bank (5);

the absorption capacitor bank (5) comprises N absorption capacitors;

the laminated busbar (2) comprises: the laminated top insulating plate, the positive plate, the middle insulating plate, the negative plate and the bottom insulating plate; the positions of the positive plate and the negative plate can be interchanged;

the N IGBT modules (1) and the absorption capacitor bank (5) are arranged on the laminated busbar (2);

at least N groups of interfaces are arranged on the laminated busbar (2), each group of interfaces comprises a plurality of first interfaces (3), and one pair of interfaces in the plurality of first interfaces (3) is used as a second interface (4);

the plurality of first interfaces (3) are used for connecting the laminated busbar (2) and the IGBT module (1), one half of the first interfaces (3) in each group connect the positive plate of the laminated busbar (2) with the power collector of the IGBT module (1), and the other half of the first interfaces (3) in each group connect the negative plate of the laminated busbar (2) with the power emitter of the IGBT module (1);

the second interfaces (4) are used for connecting the laminated busbar (2) and the absorption capacitor bank (5), one second interface (4) connects a positive plate of the laminated busbar (2) with a positive electrode of the absorption capacitor, and the other second interface (4) connects a negative plate of the laminated busbar (2) with a negative electrode of the absorption capacitor and is used for absorbing overvoltage generated by the IGBT module (1) in the switching process;

the laminated busbar (2) leads out a positive plate terminal (6) and a negative plate terminal (7);

when N IGBT modules (1) are vertically placed, the centrosymmetric IGBT multi-module parallel device further comprises: an absorption capacitor bank (5), N laminated branches (9), a bus bar (10) and a support plate (11);

the absorption capacitor bank (5) comprises N absorption capacitors;

the laminated branch bar (9) and the bus bar (10) comprise: the laminated top insulating plate, the positive plate, the middle insulating plate, the negative plate and the bottom insulating plate; the positions of the positive plate and the negative plate can be interchanged;

the N IGBT modules (1) are arranged on the N laminated branch bars (9), and the upper ends of the laminated branch bars (9) are bent to form bus bars (10) for bus;

at least N groups of interfaces are arranged on the laminated branch row (9), each group of interfaces comprises a plurality of first interfaces (3), and one pair of interfaces in the plurality of first interfaces (3) is used as a second interface (4);

the plurality of first interfaces (3) are used for connecting the laminated branch row (9) and the IGBT module (1), one half of the first interfaces (3) in each group connect the positive plate of the laminated branch row (9) with the power collector of the IGBT module (1), and the other half of the first interfaces (3) in each group connect the negative plate of the laminated branch row (9) with the power emitter of the IGBT module (1);

the second interfaces (4) are used for connecting the bus bar (10) and the absorption capacitor bank (5), one second interface (4) connects a positive plate of the bus bar (10) with a positive electrode of the absorption capacitor, and the other second interface (4) connects a negative plate of the bus bar (10) with a negative electrode of the absorption capacitor and is used for absorbing overvoltage generated by the IGBT module (1) in the switching process;

the busbar (10) leads out a positive plate terminal (6) and a negative plate terminal (7);

the lower ends of the N laminated branch rows (9) are arranged on the supporting plate (11).

2. The centrosymmetric IGBT multi-module parallel arrangement according to claim 1, characterized in that the N IGBT modules (1) are arranged in a ring shape with centrosymmetry.

3. The centrosymmetric IGBT multi-module shunt device according to claim 1, characterized in that the IGBT module (1) comprises: the IGBT module comprises IGBT modules with six terminals and two rows, IGBT modules with three terminals linearly arranged, IGBT modules with four terminals distributed on two sides, IGBT modules with four terminals distributed in the middle, IGBT modules with multiple terminals linearly arranged and IGBT modules with multiple terminals combined and arranged.

4. The centrally-symmetrical IGBT multi-module parallel device as claimed in claim 4, wherein when N IGBT modules (1) are horizontally arranged, the center of the laminated busbar (2) is hollow, positive plate terminals (6) are led out from positive plates of the laminated busbar (2), negative plate terminals (7) are led out from negative plates of the laminated busbar (2), the space leading-out positions of the positive plate terminals (6) and the negative plate terminals (7) are 180 degrees different, and the laminated busbar (2) is centrally symmetrical as a whole.

5. The centrosymmetric IGBT multi-module parallel device as claimed in claim 4, characterized in that when N IGBT modules (1) are vertically arranged, positive plate terminals (6) are led out from positive plates of the bus bar (10), negative plate terminals (7) are led out from negative plates of the bus bar (10), the space leading-out positions of the positive plate terminals (6) and the negative plate terminals (7) are different by 180 degrees, and the N laminated branches (9) are centrosymmetric with the bus bar (10) as a whole.

6. The centrosymmetric IGBT multi-module parallel arrangement according to claim 1, characterized in that the busbars (10) are "L" shaped.

7. The centrosymmetric IGBT multi-module parallel device according to claim 6, characterized in that the busbars (10) are hollow in the center.

8. The centrosymmetric IGBT multi-module parallel device as claimed in claim 1, wherein the bottom of the N IGBT modules (1) is further provided with a heat dissipation plate (8), and the heat dissipation plate (8) is hollow in the center and is centrosymmetric.

9. The centrosymmetric IGBT multi-module parallel arrangement according to claim 1, characterized in that the absorption capacitor bank (5) is laid out in a ring shape with centrosymmetry.

10. The centrosymmetric IGBT multi-module parallel device as claimed in claim 1, characterized in that the support plate (11) is hollow in the center and is centrosymmetric.

Technical Field

The invention relates to the field of high-power converters, in particular to a centrosymmetric IGBT multi-module parallel device.

Background

The important part of a modern power electronic system is a semiconductor device, wherein an insulated gate bipolar transistor IGBT integrates the advantages of a field effect transistor MOSFET and a power transistor GTR, and is widely applied to occasions such as a high-power converter, an electrified railway converter, an industrial motor driving system, an offshore wind power converter and the like. With the continuous improvement of power level, on one hand, although existing products of IGBT modules with higher withstand voltage and higher power are available, the driving circuit design in use is simpler, but a series of problems such as high price, inconvenient maintenance, low reliability and the like are also attached. Therefore, the parallel connection of the IGBT multiple modules is widely applied to the occasions. In the design of a high-power converter, a power connection structure between parallel IGBT modules is very important, and more factors need to be considered, such as the symmetry of the whole layout, the heat dissipation of the modules, the modularization and the expansibility design and the like. The most important thing is to ensure the uniform distribution of the current of the parallel modules and reduce the electromagnetic influence among the modules, thereby ensuring the safe and high-efficiency operation of the converter.

Disclosure of Invention

Aiming at the defects in the prior art, the invention aims to provide:

(1) the centrosymmetric parallel multi-IGBT module power connection structure improves the current balance of the parallel modules, reduces the electromagnetic influence among the parallel modules and improves the heat dissipation conditions of the modules;

(2) the IGBT multi-module parallel structure with central symmetry forms a STACK, the application occasions with higher voltage and higher power level can be met through series-parallel connection among the STACKs, the design of modularization and expandability is realized, and guidance is provided for the design of a high-power converter.

In order to achieve the above purposes, the technical scheme adopted by the invention is as follows:

a centrosymmetric IGBT multi-module parallel device comprises N IGBT modules 1, wherein N is more than 2,

when N IGBT modules 1 are horizontally placed, the centrosymmetric IGBT multi-module parallel device further comprises: the laminated busbar 2 and the absorption capacitor bank 5;

the absorption capacitor bank 5 comprises N absorption capacitors;

the laminated busbar 2 includes: the laminated top insulating plate, the positive plate, the middle insulating plate, the negative plate and the bottom insulating plate; the positions of the positive plate and the negative plate can be interchanged;

the N IGBT modules 1 and the absorption capacitor group 5 are arranged on the laminated busbar 2;

the laminated busbar 2 is provided with at least N groups of interfaces, each group of interfaces comprises a plurality of first interfaces 3, and one pair of interfaces in the plurality of first interfaces 3 is used as a second interface 4;

the plurality of first interfaces 3 are used for connecting the laminated busbar 2 and the IGBT module 1, one half of the first interfaces 3 in each group connect the positive plate of the laminated busbar 2 with the power collector of the IGBT module 1, and the other half of the first interfaces 3 in each group connect the negative plate of the laminated busbar 2 with the power emitter of the IGBT module 1;

the second interface 4 is used for connecting the laminated busbar 2 and the absorption capacitor bank 5, one second interface 4 connects the laminated busbar positive plate with the absorption capacitor positive electrode, and the other second interface 4 connects the laminated busbar negative plate with the absorption capacitor negative electrode and is used for absorbing overvoltage generated by the IGBT module 1 in the switching process.

The laminated busbar 2 leads out a positive plate terminal 6 and a negative plate terminal 7.

The layout balances parasitic impedance on current paths of the N parallel IGBT modules, is beneficial to module current equalization, inhibits electromagnetic influence caused by transient asymmetry of a switch, and realizes series-parallel connection and expansibility by connecting positive and negative plate terminals of the formed modular STACK. The bottom of the N IGBT modules is provided with a heat dissipation plate 8, the center of the heat dissipation plate 8 is hollowed and is matched with a hollowed laminated busbar arranged at the top of the IGBT module, so that the thermal resistance is favorably reduced, the heat dissipation efficiency is improved, and the symmetry of the whole device is kept.

When the N IGBT modules 1 are vertically placed, the centrosymmetric IGBT multi-module parallel device further comprises: an absorption capacitor bank 5, N laminated branches 9, a bus bar 10, and a support plate 11;

the absorption capacitor bank 5 comprises N absorption capacitors;

the laminated branch bar 9 and the bus bar 10 include: the laminated top insulating plate, the positive plate, the middle insulating plate, the negative plate and the bottom insulating plate; the positions of the positive plate and the negative plate can be interchanged;

the N IGBT modules 1 are arranged on the N laminated branches 9, and the upper ends of the laminated branches 9 are bent to form a bus bar 10 for bus;

at least N groups of interfaces are arranged on the laminated branch line 9, each group of interfaces comprises a plurality of first interfaces 3, and one pair of interfaces in the plurality of first interfaces 3 is used as a second interface 4;

the plurality of first interfaces 3 are used for connecting the laminated branch 9 and the IGBT module 1, one half of the first interfaces 3 in each group connect the positive plates of the laminated branch 9 with the power collector of the IGBT module 1, and the other half of the first interfaces 3 in each group connect the negative plates of the laminated branch 9 with the power emitter of the IGBT module 1;

the second interfaces 4 are used for connecting the bus bar 10 and the absorption capacitor bank 5, one second interface 4 connects a positive plate of the bus bar 10 with a positive electrode of the absorption capacitor, and the other second interface 4 connects a negative plate of the bus bar 10 with a negative electrode of the absorption capacitor and is used for absorbing overvoltage generated by the IGBT module 1 in the switching process;

a positive electrode plate terminal 6 is led out from one side of the bus bar 10, and a negative electrode plate terminal 7 is led out from the other side of the bus bar 10;

the lower ends of the N laminated branches 9 are disposed on the support plate 11.

The layout balances parasitic impedance on current paths of N parallel IGBT modules, is beneficial to module current equalization, inhibits electromagnetic influence of transient asymmetry of a switch, and realizes series-parallel connection and expansibility by connecting positive and negative plate terminals of the formed modular STACK. The bottom of the parallel IGBT module 1 is provided with a heat dissipation plate 8, and the heat dissipation plate 8 is hollow in the center and is centrosymmetric. The IGBT module 1 is free of the bus bar 10 and covers the side installation supporting plate 11, the center of the supporting plate 11 is hollow and is centrosymmetric, and the hollow bus bar is installed on the other side of the IGBT module 1 and the hollow heat dissipation plate 8 installed at the bottom of the IGBT module 1 are matched, so that the thermal resistance is favorably reduced, the heat dissipation efficiency is improved, and the integral centrosymmetry is kept.

On the basis of the scheme, the N IGBT modules 1 are arranged in a ring shape and are in central symmetry.

On the basis of the above scheme, the IGBT module 1 includes: the IGBT module comprises IGBT modules with six terminals and two rows, IGBT modules with three terminals linearly arranged, IGBT modules with four terminals distributed on two sides, IGBT modules with four terminals distributed in the middle, IGBT modules with multiple terminals linearly arranged and IGBT modules with multiple terminals combined and arranged.

On the basis of the scheme, when N IGBT modules 1 are horizontally placed, the center of the laminated busbar 2 is hollowed, a positive plate terminal 6 is led out from a positive plate of the laminated busbar 2, a negative plate terminal 7 is led out from a negative plate of the laminated busbar 2, the space leading-out positions of the positive plate terminal 6 and the negative plate terminal 7 are different by 180 degrees, and the laminated busbar 2 is integrally in central symmetry.

On the basis of the scheme, when the N IGBT modules 1 are connected in parallel and each IGBT module 1 is vertically arranged, the positive plate terminal 6 is led out from the positive plate of the busbar 10, the negative plate terminal 7 is led out from the negative plate of the busbar 10, the space leading-out positions of the positive plate terminal 6 and the negative plate terminal 7 are different by 180 degrees, and the N laminated branches 9 and the busbar 10 are integrally in central symmetry.

On the basis of the scheme, the bus bar 10 is in an L shape; the bus bar 10 is hollow in the center.

On the basis of the scheme, the bottom parts of the N IGBT modules 1 are also provided with heat dissipation plates 8, and the heat dissipation plates 8 are hollow in the centers and are centrosymmetric;

on the basis of the scheme, the absorption capacitor bank 5 is arranged in a ring shape and is centrosymmetric.

On the basis of the scheme, the center of the supporting plate 11 is hollow and is centrosymmetric.

The technical scheme of the invention has the following beneficial effects:

(1) the power connection structure design of the centrosymmetric parallel IGBT module comprises the layout and the structure optimization of the laminated busbar, the heat dissipation plate and the support plate, so that each power connection part is convenient and fast to install, the current sharing characteristic of the parallel IGBT module is improved, the unbalanced electromagnetic influence among switching transient modules is inhibited, and the heat dissipation efficiency of the module is improved;

(2) according to the invention, the STACK formed by the IGBT multi-module parallel devices with symmetrical centers is modularly designed, and the leading-out terminals of the positive plate and the negative plate of the laminated busbar are arranged, so that not only is the overall arrangement parasitic parameter distribution balanced, but also the expansibility is realized, and guidance is provided for the design of a high-power converter.

List of abbreviations, english and key term definitions:

1. an Insulated Gate Bipolar Transistor (IGBT);

2. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET);

3. giant Transistor (GTR), power Transistor;

4. and the STACK is a modularized STACK formed by a centrosymmetric IGBT multi-module parallel structure.

References (e.g. patents/papers/standards)

[1]Buchholz,Sven S,Matthias,etc.Electrical performance of a low inductive 3.3kV half bridge IGBT module[C].PCIM Europe,International Exhibition&Conference for Power Electronics.VDE,2015.

[2] Product specification FZ1200R33HE3, british flying science ltd, 2019.

[3]Nobuya Nishida.ELECTRIC-POWER CONVERTING DEVICE,SOLAR POWER CONDITIONER SYSTEM,ELECTRICITY STORAGE SYSTEM,UNINTERRUPTIBLE POWER SOURCE SYSTEM,WIND POWER GENERATION SYSTEM,AND MOTOR DRIVE SYSTEM，US20180233918[P].2018.

[4] A parallel structure of IGBT modules is CN203787403U [ P ].2014.

[5] Zhang Sheng Mn, a composite bus bar with flow equalizing structure, CN205160386U [ P ] 2016.

Drawings

The invention has the following drawings:

FIG. 1 is a schematic diagram of a centrosymmetric IGBT multi-module parallel device with modules horizontally arranged;

FIG. 2 is a schematic diagram of the vertical placement of centrosymmetric IGBT multi-module parallel device modules;

FIG. 3 is a schematic diagram of an IGBT module with three terminals arranged in a line;

FIG. 4 is a schematic diagram I of IGBT modules with four terminals distributed on two sides;

FIG. 5 is a schematic diagram II of IGBT modules with four terminals distributed on two sides;

FIG. 6 is a schematic diagram of an IGBT module with four terminals distributed in the middle;

FIG. 7 is a schematic diagram of an IGBT module with multiple terminals arranged in a straight line;

fig. 8 is a schematic diagram of an IGBT module in which multiple terminals are arranged in combination.

Reference numerals

1IGBT module 2 laminated busbar

3 interface one 4 interface two

5 positive plate terminal of absorption capacitor bank 6

7 negative plate terminal 8 heat radiation plate

9 laminated branch 10 bus

11 support plate

Detailed Description

The application provides a centrosymmetric IGBT multi-module parallel device, the specific implementation modes are divided into two types, and the invention is further described in detail by combining the drawings and the specific embodiments as follows:

when N (N >2) IGBT modules 1 are connected in parallel and each IGBT module 1 is horizontally disposed, the following description will be given taking the example of 8 IGBT modules 1 connected in parallel, as shown in fig. 1,

8 parallelly connected IGBT module 1 pendulum into the ring-type, are central symmetry, adopt female row 2 of stromatolite to link together 8 IGBT modules 1, female row 2 of stromatolite still includes 8 group interface one 3 at least, and a set of 6 interfaces, every group interface 3 divide into two, 3 interfaces on a line are used for female positive plate of arranging 2 with the stromatolite to be connected with IGBT module 1's power collecting electrode, and 3 interfaces on another are used for female negative plate of arranging 2 with the stromatolite to be connected with IGBT module 1's power emitter.

The laminated busbar 2 further comprises at least 8 pairs of interfaces II 4 and 2 pairs of interfaces, wherein one interface II 4 is used for connecting a positive plate of the laminated busbar 2 with the positive electrode of the absorption capacitor, and the other interface II 4 is used for connecting a negative plate of the laminated busbar 2 with the negative electrode of the absorption capacitor;

the absorption capacitor bank 5 is arranged on the laminated busbar 2 through the interface II 4, and the absorption capacitor bank 5 is arranged in a ring shape and is in central symmetry.

Female 2 central fretworks of stromatolite are female, and female 2 of stromatolite includes: the laminated top insulating plate, the positive plate, the middle insulating plate, the negative plate and the bottom insulating plate; the positions of the positive plate and the negative plate can be interchanged,

positive plate terminal 6 is drawn forth from female positive plate of arranging 2 of stromatolite, and negative plate terminal is drawn forth from female negative plate of arranging 2 of stromatolite, positive plate terminal 6 and negative plate terminal space draw-out position are poor 180 each other, make the parasitic impedance balance on the parallelly connected IGBT module 1 current path, are favorable to the module to flow equalize, wholly are central symmetry, have restrained asymmetric electromagnetic influence.

The heating panel 8 is installed to parallelly connected IGBT module 1 bottom, 8 central fretworks of heating panel are central symmetry, cooperate with female row 2 of the fretwork stromatolite of installing at parallelly connected IGBT module 1 top, are favorable to reducing the thermal resistance, improve the radiating efficiency.

When N (N >2) IGBT modules 1 are connected in parallel and each IGBT module 1 is placed vertically, the following description will be given by taking as an example that 8 IGBT modules 1 are connected in parallel, as shown in fig. 2, 8 IGBT modules 1 connected in parallel are placed in a ring shape and are centrosymmetric, the laminated branch 9 is centrosymmetric, one end of each branch is bent to form a busbar 10 which is L-shaped and is converged, and the whole is centrosymmetric.

The device is used for absorbing overvoltage generated by the parallel IGBT module 1 in the switching process;

the absorption capacitor group 5 is arranged in a ring shape and is centrosymmetric. The center of the busbar 10 is hollow;

the laminated branch bar 9 and the bus bar 10 each include: the laminated top insulating plate, the positive plate, the middle insulating plate, the negative plate and the bottom insulating plate; the positions of the positive plate and the negative plate can be interchanged, the positive plate terminal 6 is led out from the positive plate of the busbar 10, the negative plate terminal is led out from the negative plate of the busbar 10, and the spatial leading positions of the positive plate terminal 6 and the negative plate terminal are different by 180 degrees;

the laminated branch row 9 is provided with at least 8 groups of first interfaces 3 and 6 groups of interfaces, each group of interfaces 3 is divided into two rows and one row of 3 interfaces, one row of the first interfaces 3 is used for connecting the positive plates of the laminated branch row 9 with the power collector of the IGBT module, and the other row of the first interfaces 3 is used for connecting the negative plates of the laminated branch row 9 with the power emitter of the IGBT module.

The laminated branch row 9 is provided with at least 8 pairs of interfaces II 4 and 2 pairs of interfaces, one interface II 4 is used for connecting the positive plate of the laminated branch row 9 with the positive electrode of the absorption capacitor, and the other interface II 4 is used for connecting the negative plate of the laminated branch row 9 with the negative electrode of the absorption capacitor;

the layout balances the parasitic impedance on the current path of the parallel IGBT module 1, is favorable for equalizing the current of the modules and inhibits the electromagnetic influence during the switching transient state. The bottom of the parallel IGBT module 1 is provided with a heat dissipation plate 8, and the heat dissipation plate 8 is hollow in the center and is centrosymmetric. Parallelly connected IGBT module 1 and busbar 10 parallel side erection bracing board 11, backup pad 11 center fretwork is central symmetry, cooperatees with busbar 10 of installing at IGBT module 1 top and the fretwork heating panel 8 of installing at IGBT module 1 bottom, is favorable to reducing the thermal resistance, improves the radiating efficiency.

In the above embodiment, the six-terminal and two-column arranged IGBT module is taken as an example, but the centrosymmetric multi-IGBT module parallel device is applicable to a plurality of IGBT module types shown in fig. 3 to 8, including the IGBT module type with three terminals arranged linearly fig. 3, the IGBT module type with four terminals distributed on both sides fig. 4 and fig. 5, the IGBT module type with four terminals distributed in the middle fig. 6, the IGBT module type with multiple terminals arranged linearly fig. 7, and the IGBT module type with multiple terminals arranged in combination fig. 8.

Details not described in the present invention are well known to those skilled in the art.

The above description is only exemplary of the present invention and should not be construed as limiting the present invention, and any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Those not described in detail in this specification are within the skill of the art.