阅读说明：本技术 一种高性能封装辐射吸收结构 (High-performance packaging radiation absorption structure ) 是由 李尔平 樊宇迪 李天武 于 2021-07-14 设计创作，主要内容包括：本发明公开了一种高性能封装辐射吸收结构。包含多个紧密排列的周期单元结构,每个周期单元结构主要由一个谐振单元、一层有耗介质层和一层金属背板依次层叠构成,谐振层与金属背板分别位于有耗介质层的两侧；所述周期单元结构包括顶层谐振单元、有耗介质层和底层金属背板；谐振单元主要由一层介质层和两层金属层以及连接两层金属层之间的金属过孔组成,其中两层金属层分别贴于介质层两表面；金属过孔穿过介质层将两层金属层电连接。本发明适用于抑制封装器件在特定频点辐射的吸收,具有极佳的角度稳定性,在设计频点具有良好的辐射吸收能力,从而增加反射损耗,提升封装器件EMI收益。(The invention discloses a high-performance packaging radiation absorption structure. The device comprises a plurality of closely arranged periodic unit structures, wherein each periodic unit structure is mainly formed by sequentially laminating a resonance unit, a layer of lossy dielectric layer and a layer of metal back plate, and the resonance layer and the metal back plate are respectively positioned at two sides of the lossy dielectric layer; the periodic unit structure comprises a top layer resonance unit, a lossy medium layer and a bottom layer metal back plate; the resonance unit mainly comprises a dielectric layer, two metal layers and a metal via hole for connecting the two metal layers, wherein the two metal layers are respectively attached to the two surfaces of the dielectric layer; the metal via hole penetrates through the dielectric layer to electrically connect the two metal layers. The invention is suitable for inhibiting the radiation absorption of the packaging device at a specific frequency point, has excellent angle stability, and has good radiation absorption capacity at a designed frequency point, thereby increasing the reflection loss and promoting the EMI (electro-magnetic interference) benefit of the packaging device.)

1. A high-performance packaging radiation absorption structure comprises a plurality of closely-arranged periodic unit structures, wherein each periodic unit structure is mainly formed by sequentially laminating a resonance unit, a lossy dielectric layer and a metal back plate, and the resonance layer and the metal back plate are respectively positioned on two sides of the lossy dielectric layer; the periodic unit structure comprises a top layer resonance unit P₁A layer D of a lossy dielectric₂And a bottom metal backsheet G; top layer resonance unit P₁Is adhered to the lossy medium layer D₂The upper surface and the bottom layer of metal back plate G are stuck on a lossy medium layer D₂A lower surface; the method is characterized in that:

the resonance unit P₁Comprising a top metal patch M₁Dielectric plate D₁And a bottom metal patch M₂And connecting the top metal patch M₁And a bottom metal patch M₂Metal via hole V therebetween₁Composition is carried out; top metal patch M₁Is adhered to a medium plate D₁Upper surface, bottom metal patch M₂Is adhered to a medium plate D₁A lower surface; the metal via hole V₁At the resonance unit P₁The geometric center of (a);

the top metal patch M₁Comprises four top layer semi-circle metal patches A₁、A₂、A₃、A₄And connecting the metal via V₁And two top layer semi-circle metal pastesTablet A₁、A₂Top layer metal strip L of₁₁、L₁₂(ii) a Four top layer semi-circle metal paster A₁、A₂、A₃、A₄Respectively located on the top metal patch M₁Four sides, and four top half-round metal patches A₁、A₂、A₃、A₄The centers of the circles are respectively positioned on the top metal patch M₁The middle points of the four sides, four top half-round metal patches A₁、A₂、A₃、A₄Respectively with the top metal patch M₁Four sides are overlapped; four top layer semi-circle metal paster A₁、A₂、A₃、A₄Two adjacent metal strips L passing through the top layer respectively₁₁、L₁₂Is connected to the metal via V₁Each metal strip is connected with the metal via hole V along the circle center of the top semicircular metal patch connected with the metal strip₁Two top layer metal strips L₁₁、L₁₂Width and metal via hole V₁The diameters are the same; two top layer metal strips L₁₁And L₁₂The middle parts of the resistor plates are all cut off, and the cut-off parts are all covered with resistor plates R₁、R₂The two parts of each top layer metal strip after being cut off are electrically connected through a respective resistor disc;

the bottom metal patch M₂Comprises a bottom layer semi-circle metal patch B₁、B₂、B3、B₄And connecting the metal via V₁And two bottom semicircular metal patches B₃、B₄Metal strip king₂₁、L₂₂(ii) a Four bottom layer semi-circle metal paster B₁、B₂、B₃、B₄Respectively located at the bottom metal patch M₂Four sides, and four bottom semi-circle metal patches B₁、B₂、B₃、B₄The centers of the circles are respectively positioned on the bottom metal patch M₂The middle points of the four sides, four bottom semi-circle metal patches B₁、B₂、B₃、B₄Respectively with the bottom metal patch M₂Four sides are overlapped; four bottom layer semi-circle metal paster B₁、B₂、B₃、B₄Wherein two adjacent metal strips L are respectively passed through the bottom layer₂₁、L₂₂Is connected to the metal via V₁Each metal strip is connected with the metal via hole V along the circle center of the bottom semicircular metal patch connected with the metal strip₁Two bottom metal strips L₂₁、L₂₂Width and metal via hole V₁The diameters are the same; bottom metal patch M₂In which a bottom metal strip L is arranged₂₁、L₂₂Two bottom layer semi-circle metal patches B₃、B₄Via metal V₁Axially projected to top metal patch M₁Two bottom layer semi-circle metal paster A corresponding to the upper part₁、A₂Without top layer of metal strips L₂₁、L₂₂。

2. A high performance encapsulated radiation absorbing structure as set forth in claim 1, wherein:

the top layer semi-circle metal patch A₁、A₂、A₃、A₄And a bottom layer semicircular metal patch B₁、B₂、B₃、B₄Are all semicircular and have the same size.

3. A high performance encapsulated radiation absorbing structure as set forth in claim 1, wherein:

in the high-performance packaging radiation absorption structure, each resonant unit P in the periodic unit structures in the same column₁Are connected so that two adjacent resonance units P in the same column₁In one resonant cell P₁Top layer semi-circle metal patch A₃Bottom layer semi-circle metal paster B₃Respectively with another resonant cell P₁Top layer semi-circle metal patch A₁Bottom layer semi-circle metal paster B₁Respectively butt-jointed to form two complete circular patches;

each resonant cell P in periodic cell structure of the same row₁Are connected so that two adjacent resonance units P in the same row₁In, one resonanceUnit P₁Top layer semi-circle metal patch A₄Bottom layer semi-circle metal paster B₄Respectively with another resonant cell P₁Top layer semi-circle metal patch A₂Bottom layer semi-circle metal paster B₂The two circular patches are jointed into a whole.

4. A high performance encapsulated radiation absorbing structure as set forth in claim 1, wherein:

the dielectric plate D₁、D₂Fr-4 plate with dielectric constant of 4.3 and dielectric loss tangent of 0.025 is used.

5. A high performance encapsulated radiation absorbing structure as set forth in claim 1, wherein:

the resistance chip R₁、R₂Is a resistive film.

6. A high performance encapsulated radiation absorbing structure as set forth in claim 1, wherein:

the frequency of the electromagnetic waves incident to the high-performance packaging radiation absorption structure is 5GHz-15 GHz.

7. Use of a high performance all angle insensitive encapsulated radiation absorber as claimed in any of claims 1 to 6, wherein: the method is applied to radiation suppression of devices on chip and off chip of modern commercial communication and packaging products or chips.

Technical Field

The invention relates to an electromagnetic wave radiation structure in the technical field of metamaterial absorbers, in particular to a high-performance full-angle insensitive packaging radiation absorption structure which can be applied to radiation suppression of devices on and off a chip of modern commercial communication and packaging products or chips.

Background

The metamaterial absorber is an electromagnetic wave absorber material applying a metamaterial structure, and converts electromagnetic energy into energy in other forms such as heat energy by means of absorption of electromagnetic waves instead of reflection or transmission, so that the loss of the electromagnetic waves is realized. The property is mostly applied to the military field, and the radar scattering cross section of the aircraft is reduced.

The research on the absorber originates from a Salisbury screen, the structure of the Salisbury screen is that a thin resistance layer is arranged on a metal back plate at a distance of 1/4 wavelengths, the structure of the Salisbury screen is simple, perfect matching can be realized at a target frequency point, and strong electromagnetic wave absorption capacity can be generated, but the structure has a series of problems of narrow bandwidth, thick thickness, heavy weight, poor angle stability and the like. In the past research, a large number of experts and scholars have conducted intensive research on absorbers and have made various technological breakthroughs to solve a series of problems of conventional absorbers by introducing a metamaterial structure including a frequency selective Surface (fss), an Artificial Impedance Surface (AIS), or a High Impedance Surface (HIS). However, most studies are focused on the ideal perpendicular incidence of electromagnetic waves, and many absorbers have the problem of resonance frequency shift under the non-ideal incidence of electromagnetic waves. When the absorber is applied to a chip package and other scenes, due to the complexity of field distribution, the performance of the metamaterial absorber is often seriously deteriorated, so that how to improve the angular performance of the absorber becomes a great challenge.

With the progress of technology and the continuous exploration of the application scene of the absorber, especially the development of communication towards high frequency and high speed, chip packaging and other functional devices towards high integration degree, the application of the absorber in chip packaging and other narrow spaces makes it another challenge how to reduce the size and thickness of the absorber to meet the requirement of system miniaturization.

Disclosure of Invention

In order to overcome the defects of the prior art, the invention provides a high-performance packaging radiation absorption structure, which makes full use of structural interlayer electric coupling, realizes extremely high miniaturization degree of the structure, and realizes that the structural resonance frequency is not sensitive to incident electromagnetic waves completely. The invention is suitable for the radiation inhibition design of devices on and off the chip of modern commercial communication and packaging products or chips, the unit size and the thickness are extremely small, and the resonant frequency is stable and unchanged within the incident angle range of 0-80 degrees.

The technical scheme adopted by the invention for solving the technical problems is as follows:

the absorber comprises a plurality of closely arranged periodic unit structures, each periodic unit structure is mainly formed by sequentially laminating a resonance unit, a layer of lossy dielectric layer and a layer of metal back plate, and the resonance layer and the metal back plate are respectively positioned on two sides of the lossy dielectric layer; the periodic unit structure comprises a top layer resonance unit P₁A layer D of a lossy dielectric₂And a bottom metal backsheet G; top layer resonance unit P₁Is adhered to the lossy medium layer D₂The upper surface and the bottom layer of metal back plate G are stuck on a lossy medium layer D₂A lower surface.

The resonance unit P₁Comprising a top metal patch M₁Dielectric plate D₁And a bottom metal patch M₂And connecting the top metal patch M₁And a bottom metal patch M₂Metal via hole V therebetween₁Composition is carried out; top metal patch M₁Is adhered to a medium plate D₁Upper surface, bottom metal patch M₂Is adhered to a medium plate D₁A lower surface; the metal via hole V₁At the resonance unit P₁The geometric center of (a).

The top metal patch M₁Comprises four top layer semi-circle metal patches A₁、A₂、A₃、A₄And connecting the metal via V₁And two top layer semicircular metal patches A₁、A₂Top layer metal strip L of₁₁、L₁₂(ii) a Four top layer semi-circle metal paster A₁、A₂、A₃、A₄Respectively located on the top metal patch M₁Four sides, and four top half-round metal patches A₁、A₂、A₃、A₄The centers of the circles are respectively positioned on the top metal patch M₁The middle points of the four sides, four top half-round metal patches A₁、A₂、A₃、A₄Respectively with the top layer of goldBelongs to the paster M₁Four sides are overlapped; four top layer semi-circle metal paster A₁、A₂、A₃、A₄Two adjacent metal strips L passing through the top layer respectively₁₁、L₁₂Is connected to the metal via V₁Each metal strip is connected with the metal via hole V along the circle center of the top semicircular metal patch connected with the metal strip₁Two top layer metal strips L₁₁、L₁₂Width and metal via hole V₁The diameters are the same; two top layer metal strips L₁₁And L₁₂Are all cut and respectively covered with resistor sheets R₁、R₂And the two cut parts of the middle part of the top layer metal strip are connected through the resistor disc.

The bottom metal patch M₂Comprises a bottom layer semi-circle metal patch B₁、B₂、B₃、B₄And connecting the metal via V₁And two bottom semicircular metal patches B₃、B₄Metal strip L of₂₁、L₂₂(ii) a Four bottom layer semi-circle metal paster B₁、B₂、B₃、B₄Respectively located at the bottom metal patch M₂Four sides, and four bottom semi-circle metal patches B₁、B₂、B₃、B₄The centers of the circles are respectively positioned on the bottom metal patch M₂The middle points of the four sides, four bottom semi-circle metal patches B₁、B₂、B₃、B₄Respectively with the bottom metal patch M₂Four sides are overlapped; four bottom layer semi-circle metal paster B₁、B₂、B₃、B₄Wherein two adjacent metal strips L are respectively passed through the bottom layer₂₁、L₂₂Is connected to the metal via V₁Each metal strip is connected with the metal via hole V along the circle center of the bottom semicircular metal patch connected with the metal strip₁Two bottom metal strips L₂₁、L₂₂Width and metal via hole V₁The diameters are the same; bottom metal patch M₂In which a bottom metal strip L is arranged₂₁、L₂₂Two bottom layer semi-circle metal patches B₃、B₄Via metal V₁Axially projected to top metal patch M₁Two bottom layer semi-circle metal paster A corresponding to the upper part₁、A₂Without top layer of metal strips L₂₁、L₂₂So that the underlying metal strip L₂₁、L₂₂And a top layer metal strip L₂₁、L₂₂Are arranged in a staggered manner.

The top layer semi-circle metal patch A₁、A₂、A₃、A₄And a bottom layer semicircular metal patch B₁、B₂、B₃、B₄Are all semicircular and have the same size.

In the high-performance packaging radiation absorption structure, each resonant unit P in the periodic unit structures in the same column₁Connected, each resonant cell P in the periodic cell structure of the same column₁Middle top semi-circle metal patch A₁、A₃Middle connecting line and bottom circular patch B₁、B₃The connecting lines are all arranged in parallel, so that two adjacent resonant units P in the same column₁In one resonant cell P₁Top layer semi-circle metal patch A₃Bottom layer semi-circle metal paster B₃Respectively with another resonant cell P₁Top layer semi-circle metal patch A₁Bottom layer semi-circle metal paster B₁Respectively butt-jointed to form two complete circular patches; each resonant cell P in periodic cell structure of the same row₁Connected, a plurality of resonant cells P of the same row₁Middle top semi-circle metal patch A₂、A₄Middle connecting line and bottom circular patch B₂、B₄The connecting lines are arranged in parallel, so that two adjacent resonant units P in the same row₁In one resonant cell P₁Top layer semi-circle metal patch A₄Bottom layer semi-circle metal paster B₄Respectively with another resonant cell P₁Top layer semi-circle metal patch A₂Bottom layer semi-circle metal paster B₂The two circular patches are jointed into a whole.

The dielectric plate D₁、D₂Fr-4 plate with dielectric constant of 4.3 is usedThe dielectric loss tangent was 0.025.

The resistance chip R₁、R₂Is a resistive film.

The frequency of the electromagnetic waves incident to the high-performance packaging radiation absorption structure is 5GHz-15 GHz.

According to the technical scheme, when the electromagnetic wave incident into the free space of the packaging radiation absorber changes in the full-angle range, selectivity is generated on the electromagnetic wave with specific incident frequency, and the absorption frequency point is always kept unchanged at 10GHz, so that the stray signals of a chip system are restrained.

The invention can be applied to the radiation suppression of devices on chip and off chip of modern commercial communication and packaging products or chips.

The invention is an absorber integrated with meta-material, when electromagnetic wave in free space is incident to a resonance unit of the absorber, selectivity is generated on the electromagnetic wave with specific incident frequency, so that a working frequency band signal excites current at the resonance unit, and the electromagnetic wave cannot pass through the structure due to the metal back plate on the back of the structure; because the resistive film is arranged on the metal strip on the surface of the resonance unit, the loss is generated when the excitation current of the working frequency band passes through, and the absorption of electromagnetic waves is realized.

In specific implementation, the resistive film on the top layer of the invention has larger loss capacity on excitation current, thereby reducing the reflection of electromagnetic waves at resonance frequency, and the out-of-band electromagnetic waves are completely reflected on the structure. A very large capacitor is introduced through the metal wafer on the resonant unit, so that the structure has a better miniaturization degree compared with the traditional metamaterial absorber. The high-performance mobile communication antenna housing can be applied to radiation suppression of devices on chip and off chip of 5G and other modern commercial communication, packaging products or chips.

The working principle of the absorber of the invention is as follows:

when electromagnetic waves in space reach the surface of the structure at different angles, different modes can be excited structurally, so that equivalent parameters of the structure are changed due to the change of an incident angle, the performance of the structure is changed, particularly the resonant frequency is changed, in order to overcome the problem of the incident angle, the metamaterial resonant structure on the surface of the absorber is designed by using the design concept of a strong coupling frequency selection surface, and the angle stability of the structure is improved;

the strong coupling design concept of the resonant unit is that a metal via hole V is arranged at the geometric center of a unit structure₁The semicircular patches are respectively arranged by taking the centers of four sides of the unit as the circle center, metal wafers can be combined between unit structures which are arranged in parallel from left to right or from top to bottom, and a very thin dielectric layer is adopted in the design, so that a very strong coupling effect exists between the circular metals corresponding to the top layer and the bottom layer, an electric field is always bound between the two wafers, and a strong coupling capacitor is formed.

For a resonant cell, it can be divided into an x-polarized subcell and a y-polarized subcell according to the field polarization case for which it is intended. The y-polarized subunit comprises a metal top circular patch A₁、A₃And a bottom circular patch B₁、B₃Metal via hole V₁Metal strip L₁₁、L₁₂Resistance chip R₁(ii) a The x-polarized subunit comprises a metal top circular patch A₂、A₄And a bottom circular patch B₂、B₄Metal via hole V₁Metal strip L₁₁、L₁₂Resistance chip R₂(ii) a The two subunits are related in that the y-polarized subunit is a metal via hole V₁The axis of (a) is rotated 90 degrees counterclockwise to obtain the x-polarized subunit. The two polarization modes respectively aim at x and y polarization and do not influence the other polarization mode.

The structural equivalent circuit is analyzed by taking the y-polarization as an example, as shown in fig. 4. At a resonance frequency of 10GHz, the electric field is completely confined to the semicircular patches A of the periodic cell structure on the upper side₃、B₃And a semicircular patch A of a periodic unit structure on the lower side₁、B₁From the perspective of an equivalent circuit, the butt-jointed complete circular patch can be equivalent to a large capacitor Cs. The current being concentrated mainly in the metal strip L₁₁And L₁₂And a metal via V₁In each case, L ', L ' may be equivalent to inductance '_v. Due to the introduction of the resistive film, the resistive film can be equivalent to a resistor R, so that an equivalent series RLC resonance circuit is formed, and the resonance frequency is increasedLarge current is generated nearby, so that incident electromagnetic waves in the frequency band are reflected, and meanwhile, the electromagnetic waves are absorbed due to the existence of R, and the energy reflected by the electromagnetic waves is reduced.

When an electromagnetic wave is incident on a frequency selective surface, from an energy point of view, it can be divided into three parts: transmitted energy T (w), reflected energy R (w), and absorbed energy A (w). Thus, an absorbed energy can be obtained: a (w) ═ 1-r (w) — t (w) ═ 1-S₁₁|²-|S₂₁|². Due to the existence of the metal back plate, the transmission coefficient S of the metal back plate₂₁When it is 0, the reflection coefficient S₁₁The absorption properties of the structure are determined. And to achieve complete absorption, it is necessary to have S₁₁When the frequency band signal is equal to 0, the complete absorption of the corresponding frequency band signal by the model can be realized. For the absorber using the metamaterial, the thickness of the medium is far smaller than the wavelength, and the absorber can be generally used as a parallel lumped parameter inductor on a transmission line, so that the structure has better wave-absorbing capability as long as the designed metamaterial resonance unit is connected with the medium in parallel to realize impedance matching of the structure. From the viewpoint of an equivalent circuit, the equivalent circuit has larger current at the resonance frequency point, and because the resistive film is equivalent to a series resistor, the current passes through the resistor to generate heat energy, so that energy loss is realized.

The invention has the beneficial effects that:

the high-performance packaging radiation absorber adopts an interlayer strong coupling mechanism to realize the microminiaturization design of the metamaterial resonance unit, the final unit size is about 0.07 lambda, so that a large number of units can be arranged in a narrow space to realize an approximately infinite periodic structure, in addition, the structure is extremely thin, the whole thickness of the absorber is 0.02 lambda, the arrangement is favorable for the miniaturization and integration design scene with strict limitation on the structure thickness, and meanwhile, the miniaturization degree is still suitable for the processing production of the traditional PCB process, and the production cost of the invention is reduced.

The structure of the invention can be equivalent to an LC series resonance circuit, resonance is generated near the resonance frequency of 10GHz, so that the metal on the surface of the resonance unit generates induction current, a strong induction electric field is generated on the metal coupling sheet, the suppression angle of minus 10dB reaches 50 degrees, the stability of the resonance frequency is also kept by increasing the continuous increase of the incidence angle through the conductance loss of a film resistor and the dielectric loss of a lossy medium, and the insensitivity to the full angle of the incident electromagnetic wave is realized.

The method has great breakthrough in design structure, and has great application value in the fields of radiation suppression of devices on chip and off chip of modern commercial communication and packaging products or chips.

In summary, the invention is suitable for the design of a subminiaturized and ultrathin high-performance packaging radiation absorber with a stable wide incidence angle, the resonance frequency of the radiation absorber can be kept unchanged within a full-angle range of 0-90 degrees, the limitation of the traditional metamaterial absorber structure on the sensitivity of the incidence angle is broken through, and a design scheme and theoretical guidance are provided for the design of a high-performance absorber device. The method has great application value in the fields of radiation suppression of devices on chip and off chip of modern commercial communication and packaging products or chips and the like.

Drawings

FIG. 1 is a three-dimensional structural view of an absorbent body of an embodiment of the present invention;

FIG. 2 is a front view of the cell structure of the present invention;

FIG. 3 is a three-dimensional block diagram of a resonant cell of the cell structure of the present invention;

FIG. 4 is a schematic diagram of an equivalent circuit model of a resonant cell of the cell structure of the present invention;

FIG. 5 is a top metal structure view of a resonant cell of the cell structure of the present invention;

FIG. 6 is a view of the bottom metal structure of the resonant cells of the cell structure of the present invention;

FIG. 7 is a cross-sectional view zox of the cell structure of the present invention;

fig. 8 is a transmission performance graph of the radome of the present invention for a normal incidence horizontal, vertical polarization mode;

fig. 9 is a graph of the absorption rate of the radome of the present invention when an electromagnetic wave is incident in the TE mode in the forward direction.

Detailed Description

The invention is further described below with reference to the accompanying drawings.

As shown in fig. 1, the absorber includes a plurality of closely arranged periodic unit structures, each periodic unit structure is mainly formed by sequentially stacking a resonant unit, a lossy dielectric layer, and a metal back plate, and the resonant layer and the metal back plate are respectively located on two sides of the lossy dielectric layer.

As shown in FIG. 2, the periodic cell structure includes a top-level resonant cell P₁A layer D of a lossy dielectric₂And a bottom metal backsheet G; top layer resonance unit P₁Is adhered to the lossy medium layer D₂The upper surface and the bottom layer of metal back plate G are stuck on a lossy medium layer D₂A lower surface; resonant cell P₁The metal via hole structure mainly comprises a dielectric layer, two metal layers and a metal via hole for connecting the two metal layers, wherein the two metal layers are respectively attached to the two surfaces of the dielectric layer; the metal via hole penetrates through the dielectric layer to electrically connect the two metal layers.

As shown in fig. 3, a resonance unit P₁Comprising a top metal patch M₁Dielectric plate D₁And a bottom metal patch M₂And connecting the top metal patch M₁And a bottom metal patch M₂Metal via hole V therebetween₁Composition is carried out; top metal patch M₁Is adhered to a medium plate D₁Upper surface, bottom metal patch M₂Is adhered to a medium plate D₁A lower surface; metal via hole V₁At the resonance unit P₁The geometric center of (a);

as shown in fig. 5, the top metal patch M₁Comprises four top layer semi-circle metal patches A₁、A₂、A₃、A₄And connecting the metal via V₁And two top layer semi-circle metal pastesTablet A₁、A₂Top layer metal strip L of₁₁、L₁₂(ii) a Four top layer semi-circle metal paster A₁、A₂、A₃、A₄Respectively located on the top metal patch M₁Four sides, and four top half-round metal patches A₁、A₂、A₃、A₄The centers of the circles are respectively positioned on the top metal patch M₁The middle points of the four sides, four top half-round metal patches A₁、A₂、A₃、A₄Respectively with the top metal patch M₁Four sides are overlapped; four top layer semi-circle metal paster A₁、A₂、A₃、A₄Two adjacent metal strips L passing through the top layer respectively₁₁、L₁₂Is connected to the metal via V₁Each metal strip is connected with the metal via hole V along the circle center of the top semicircular metal patch connected with the metal strip₁In a connecting line between them, so that two top layer metal strips L are arranged₁₁、L₁₂Perpendicular to each other, one end of each top layer metal strip is positioned at the metal via hole V₁The other end of each top layer metal strip is connected with the metal semicircular sheet; two top layer metal strips L₁₁、L₁₂Width and metal via hole V₁The diameters are the same; two top layer metal strips L₁₁And L₁₂Are all cut and respectively covered with resistor sheets R₁、R₂And the two cut parts of the middle part of the top layer metal strip are connected through the resistor disc.

As shown in fig. 6, the bottom metal patch M₂Comprises a bottom layer semi-circle metal patch B₁、B₂、B₃、B₄And connecting the metal via V₁And a metal strip L in which two bottom half-round metal patches B1, B2 are arranged₂₁、L₂₂(ii) a Four bottom layer semi-circle metal paster B₁、B₂、B₃、B₄Respectively located at the bottom metal patch M₂Four sides, and four bottom semi-circle metal patches B₁、B₂、B₃、B₄The centers of the circles are respectively positioned on the bottom metal patch M₂Middle point of four sides, four bottom half round metalPaster B₁、B₂、B₃、B₄Respectively with the bottom metal patch M₂Four sides are overlapped; four bottom layer semi-circle metal paster B₁、B₂、B₃、B₄Wherein two adjacent metal strips L are respectively passed through the bottom layer₂₁、L₂₂Is connected to the metal via V₁Each metal strip is connected with the metal via hole V along the circle center of the bottom semicircular metal patch connected with the metal strip₁Are wired such that the two bottom metal strips L₂₁、L₂₂Perpendicular to each other, one end of each bottom metal strip is positioned at the metal via hole V₁The other end of each bottom layer metal strip is connected with the metal semicircular sheet; two bottom metal strips L₂₁、L₂₂Width and metal via hole V₁The diameters are the same; bottom metal patch M₂In which a bottom metal strip L is arranged₂₁、L₂₂The two bottom layer semicircular metal patches B3 and B4 pass through the metal via hole V₁Axially projected to top metal patch M₁The two top layer semicircular metal patches A3 and A4 corresponding to the upper layer are not provided with the top layer metal strips L₁₁、L₁₂Namely the top metal patch M₁Middle arranged top layer metal strip L₁₁、L₁₂The two top semi-circle metal patches A1 and A2 and the bottom metal patch M₂In which a bottom metal strip L is arranged₂₁、L₂₂The two bottom semi-circular metal patches B3 and B4 are in different positions. Two bottom metal strips L₂₁、L₂₂Is not cut, but is a complete strip, without the resistive patch.

Top layer semi-circle metal patch A₁、A₂、A₃、A₄And a bottom layer semicircular metal patch B₁、B₂、B₃、B₄Are all semicircular and have the same size.

As shown in FIGS. 1 and 4, in the high performance package radiation absorbing structure, a plurality of resonant cells P are arranged in the same column₁A plurality of resonant cells P connected in the same column₁The top circular patch A₁、A₃And a bottom circular patch B₁、B₃Average outArranged in a row such that two resonance units P adjacent to each other up and down₁Middle, upper resonance unit P₁Top layer semi-circle metal patch A at lower part₃Bottom layer semi-circle metal paster B₃Respectively and resonance units P located at the lower side₁Top layer semi-circle metal patch A on the upper part₁Bottom layer semi-circle metal paster B₁Butt-jointing and splicing into a complete circular patch;

multiple resonant cells P in the same row₁Connected, a plurality of resonant cells P of the same row₁The top circular patch A₂、A₄And a bottom circular patch B₂、B₄Are all arranged in parallel, so that two adjacent resonance units P are arranged at the left and the right₁Middle, left resonance unit P₁Top layer semi-circle metal paster A on right part₄Bottom layer semi-circle metal paster B₄Respectively and the resonance units P on the right side₁Top layer semi-circle metal paster A of left part₂Bottom layer semi-circle metal paster B₂And butt-jointing to form a complete circular patch.

In the embodiment, the dielectric plate D₁、D₂Fr-4 plate with dielectric constant of 4.3 and dielectric loss tangent of 0.025 is used. Resistance card R₁、R₂A resistive film is used.

The dimensions of the structures used in the examples of the invention are shown in table 1. In practical application, the corresponding size can be selected according to specific design targets. The relative area of the metal patches can be changed by modifying the radius R of the metal semicircular patches, and because the circular metal patches control the size of the strong coupling capacitor, when the relative area of the top circular metal patch and the bottom circular metal patch is increased, the corresponding capacitor C_sIncreasing will shift the resonant frequency in the direction of the lower frequency. In addition, the dielectric constant and the dielectric thickness of the dielectric also affect the capacitance C_sThe size of (2). The capacitance C is increased when the dielectric constant is increased, or when the dielectric thickness is decreased_sIncreasing the resonant frequency towards lower frequencies.

Table 1 dimensions of the various parts of the structure of the invention

P	r	R	w
				2.1mm	0.1mm	0.605mm	0.2mm
d1	d2
				0.3mm	0.4mm

Compared with the traditional metamaterial absorber, the metamaterial absorber provided by the embodiment of the invention innovatively introduces the concept of interlayer coupling. Besides considering the coupling of the same layer, the coupling strength of the interlayer structure is influenced by the relative area of the structure and parameters such as dielectric constant and thickness, and the adjustability of the structure is improved. In addition, the interlayer coupling structure is beneficial to reducing the structure size, and the coupling mode is insensitive to the incident angle of electromagnetic waves so as to realize the structural design with stable full angle.

This embodiment is as followsS at different angles₁₁And absorption rate as shown in fig. 8 and 9, respectively, it can be found that the present invention realizes that the resonance frequency is maintained at 10GHz over the full angle range, and realizes an unstable design of the full incident angle.

Therefore, the invention realizes the structural design of the high-performance full-angle insensitive packaging radiation absorber.

The invention is suitable for the design of absorbers for inhibiting the radiation of the packaging device at a specific frequency point, has excellent angle stability and good radiation absorption capacity at the designed frequency point, thereby increasing the reflection loss, improving the EMI (electro-magnetic interference) benefit of the packaging device and having great application value in the aspects of modern commercial communication, device radiation inhibition and the like.