阅读说明：本技术 三银玻璃 (Three-silver glass ) 是由 吕宜超 刘莹 谭小安 于 2019-11-07 设计创作，主要内容包括：本发明实施例公开的一种三银玻璃,包括玻璃基底和依次形成于所述玻璃基底同一侧面上的第一介质层、第一种子层、第一功能层、第一保护层、第二介质层、第二种子层、第二功能层、第二保护层、第三介质层、第三种子层、第三功能层、第三保护层、第四介质层,其中,所述第三介质层包括第三下子介质层、第三上子介质层和位于所述第三下子介质层与所述第三上子介质层之间的第三中间层,所述第三下子介质层与所述第二保护层相邻,所述第三上子介质层与所述第三种子层相邻,且所述第三中间层包含铜合金。该三银玻璃可提升其光学性能。(The embodiment of the invention discloses a three-silver glass, which comprises a glass substrate, and a first dielectric layer, a first seed layer, a first functional layer, a first protective layer, a second dielectric layer, a second seed layer, a second functional layer, a second protective layer, a third dielectric layer, a third sublayer, a third functional layer, a third protective layer and a fourth dielectric layer which are sequentially formed on the same side surface of the glass substrate, wherein the third dielectric layer comprises a third lower sub-dielectric layer, a third upper sub-dielectric layer and a third intermediate layer positioned between the third lower sub-dielectric layer and the third upper sub-dielectric layer, the third lower sub-dielectric layer is adjacent to the second protective layer, the third upper sub-dielectric layer is adjacent to the third sublayer, and the third intermediate layer comprises a copper alloy. The three-silver glass can improve the optical performance.)

1. The third silver glass (500) is characterized by comprising a glass substrate (10), and a first dielectric layer (11), a first seed layer (12), a first functional layer (13), a first protective layer (14), a second dielectric layer (15), a second seed layer (16), a second functional layer (17), a second protective layer (18), a third dielectric layer (19), a third sublayer (20), a third functional layer (21), a third protective layer (22) and a fourth dielectric layer (23) which are sequentially formed on the same side of the glass substrate, wherein the third dielectric layer (19) comprises a third lower sub-dielectric layer (191), a third upper sub-dielectric layer (193) and a third intermediate layer (192) positioned between the third lower sub-dielectric layer (191) and the third upper sub-dielectric layer (193), and the third lower sub-dielectric layer (191) is adjacent to the second protective layer (18), the third upper sub-dielectric layer (193) is adjacent to the third sub-layer (20), and the third intermediate layer (192) comprises a copper alloy.

2. The trisilver glass (500) of claim 1, wherein the copper alloy has a mass percent of copper greater than 50%; the copper alloy comprises a silver copper alloy; the thickness of the third intermediate layer (192) is 0-30 nm.

3. The trisilver glass (500) of claim 1, wherein the third lower sub-dielectric layer (191), the third upper sub-dielectric layer (193) comprise a metal or a non-metal nitride, respectively; the thicknesses of the third lower sub-dielectric layer (191) and the third upper sub-dielectric layer (193) are 0-100 nm respectively.

4. The triple-silver glass (500) according to claim 1, wherein the triple-silver glass (500) further comprises a first thermal stabilizing dielectric layer (31) between the first protective layer (14) and the second dielectric layer (15), and/or a second thermal stabilizing dielectric layer (32) between the second protective layer (18) and the third dielectric layer (19), and/or a third thermal stabilizing dielectric layer (33) between the third protective layer (22) and the fourth dielectric layer (23); the first thermal stable medium layer (31), the second thermal stable medium layer (32) and the third thermal stable medium layer (33) respectively comprise metal oxides.

5. The trisilver glass (500) of claim 1, wherein the first dielectric layer (11) comprises a first lower dielectric layer (111), a first upper dielectric layer (113), and a first interlayer (112) between the first lower dielectric layer (111) and the second upper dielectric layer (113), the first lower dielectric layer (111) is adjacent to the glass substrate (10), the first upper dielectric layer (113) is adjacent to the first seed layer (12), the first interlayer comprises a simple substance or an alloy of niobium, iron, tantalum, nickel, chromium, or zirconium, and the thickness of the first interlayer (112) is 0-30 nm.

6. The trisilver glass (500) of claim 1, wherein the second dielectric layer (15) comprises a second lower sub-dielectric layer (151), a second upper sub-dielectric layer (153), and a second intermediate layer (152) between the second lower sub-dielectric layer (151) and the second upper sub-dielectric layer (153), the second lower sub-dielectric layer (151) is adjacent to the first protective layer (14), the second upper sub-dielectric layer (153) is adjacent to the second seed layer (16), the second intermediate layer (152) comprises a simple substance or an alloy of niobium, iron, tantalum, nickel, chromium, or zirconium, and the second intermediate layer (152) has a thickness of 0 to 30 nm.

7. The trisilver glass (500) of claim 1, wherein the second dielectric layer (15) comprises a second lower sub-dielectric layer (151), a second upper sub-dielectric layer (153), and a second interlayer (152) between the second lower sub-dielectric layer (151) and the second upper sub-dielectric layer (153), the second lower sub-dielectric layer (151) being adjacent to the first protective layer (14), the second upper sub-dielectric layer (153) being adjacent to the second seed layer (16), the second interlayer (152) comprising a copper alloy.

8. The trisilver glass (500) of claim 1, wherein the fourth dielectric layer (23) comprises a fourth lower sub-dielectric layer (231), a fourth upper sub-dielectric layer (233), and a fourth intermediate layer (232) between the fourth lower sub-dielectric layer (231) and the fourth upper sub-dielectric layer (233), the fourth lower sub-dielectric layer (231) is adjacent to the third protective layer (22), the fourth intermediate layer (232) comprises a simple substance or an alloy of niobium, iron, tantalum, nickel, chromium, or zirconium, and the thickness of the fourth intermediate layer (232) is 0 to 30 nm.

9. The trisilver glass (500) of claim 1, wherein the first protective layer (14), the second protective layer (18), and the third protective layer (22) each comprise a nickel-chromium alloy or a nickel-chromium oxide; the first seed layer (12), the second seed layer (16) and the third seed layer (20) each comprise zinc oxide, zinc aluminum oxide or zinc tin oxide; the thicknesses of the first seed layer (12), the first protective layer (14), the second seed layer (16), the second protective layer (18), the third seed layer (20) and the third protective layer (22) are respectively 0-20 nm; -the first functional layer (13), the second functional layer (17) and the third functional layer (21) comprise silver or a copper-silver alloy, respectively; the thicknesses of the first functional layer (13), the second functional layer (17) and the third functional layer (21) are 0-40 nm respectively.

10. The three-silver glass (500) is characterized by comprising a glass substrate (10), and a first dielectric layer (11), a first seed layer (12), a first functional layer (13), a first protective layer (14), a second dielectric layer (15), a second seed layer (16), a second functional layer (17), a second protective layer (18), a third dielectric layer (19), a third sublayer (20), a third functional layer (21), a third protective layer (22) and a fourth dielectric layer (23) which are sequentially formed on the same side of the glass substrate, wherein the second dielectric layer (15) comprises a second lower sub-dielectric layer (151), a second upper sub-dielectric layer (153) and a second intermediate layer (152) positioned between the second lower sub-dielectric layer (151) and the second upper sub-dielectric layer (153), and the second lower sub-dielectric layer (151) is adjacent to the first protective layer (14), the second upper sub-dielectric layer (153) is adjacent to the second seed layer (16), the second intermediate layer (152) comprises a copper alloy, the mass percentage of copper in the copper alloy is greater than 50%, the copper alloy comprises a silver-copper alloy, and the thickness of the third intermediate layer (152) is 0-30 nm.

Technical Field

The invention relates to the technical field of glass manufacturing, in particular to three-silver glass.

Background

Along with the increasing execution of national energy-saving and emission-reducing policies and the enhancement of low-carbon environmental awareness of people, energy-saving glass represented by low-emissivity glass is more and more widely applied to doors, windows and glass curtain walls. In the family of low-emissivity glass, double-silver low-emissivity glass with excellent energy-saving performance is widely applied. However, the optical performance of the existing double-silver low-emissivity glass has certain disadvantages, and therefore, the optical performance of the existing double-silver low-emissivity glass needs to be further improved to meet higher requirements.

Disclosure of Invention

In view of the above problems, embodiments of the present invention provide a three-silver glass to improve its optical performance.

On one hand, the third silver glass provided by the embodiment of the invention comprises a glass substrate, and a first dielectric layer, a first seed layer, a first functional layer, a first protective layer, a second dielectric layer, a second seed layer, a second functional layer, a second protective layer, a third dielectric layer, a third sublayer, a third functional layer, a third protective layer and a fourth dielectric layer which are sequentially formed on the same side surface of the glass substrate, wherein the third dielectric layer comprises a third lower sub-dielectric layer, a third upper sub-dielectric layer and a third intermediate layer positioned between the third lower sub-dielectric layer and the third upper sub-dielectric layer, the third lower sub-dielectric layer is adjacent to the second protective layer, the third upper sub-dielectric layer is adjacent to the third sublayer, and the third intermediate layer comprises a copper alloy.

In one embodiment of the invention, the copper alloy has a mass percent of copper greater than 50%; the copper alloy comprises a silver copper alloy; the thickness of the third middle layer is 0-30 nm.

In an embodiment of the present invention, the third lower sub-dielectric layer and the third upper sub-dielectric layer respectively comprise a metal nitride or a non-metal nitride; the thicknesses of the third lower sub-dielectric layer and the third upper sub-dielectric layer are 0-100 nm respectively.

In one embodiment of the present invention, the third silver glass further comprises a first thermal stable medium layer located between the first protective layer and the second medium layer, and/or a second thermal stable medium layer located between the second protective layer and the third medium layer, and/or a third thermal stable medium layer located between the third protective layer and the fourth medium layer; the first thermal stable medium layer, the second thermal stable medium layer and the third thermal stable medium layer respectively comprise metal oxides.

In an embodiment of the invention, the first dielectric layer includes a first lower dielectric layer, a first upper dielectric layer and a first intermediate layer located between the first lower dielectric layer and the second upper dielectric layer, the first lower dielectric layer is adjacent to the glass substrate, the first upper dielectric layer is adjacent to the first seed layer, the first intermediate layer includes a simple substance or an alloy of niobium, iron, tantalum, nickel, chromium or zirconium, and the thickness of the first intermediate layer is 0 to 30 nm.

In an embodiment of the invention, the second dielectric layer includes a second lower sub-dielectric layer, a second upper sub-dielectric layer, and a second intermediate layer located between the second lower sub-dielectric layer and the second upper sub-dielectric layer, the second lower sub-dielectric layer is adjacent to the first protective layer, the second upper sub-dielectric layer is adjacent to the second seed layer, the second intermediate layer includes a simple substance or an alloy of niobium, iron, tantalum, nickel, chromium, or zirconium, and a thickness of the second intermediate layer is 0 to 30 nm.

In one embodiment of the invention, the second dielectric layer (15) comprises a second lower sub-dielectric layer (151), a second upper sub-dielectric layer (153), and a second intermediate layer (152) located between the second lower sub-dielectric layer (151) and the second upper sub-dielectric layer (153), the second lower sub-dielectric layer (151) is adjacent to the first protective layer (14), the second upper sub-dielectric layer (153) is adjacent to the second seed layer (16), and the second intermediate layer (152) comprises a copper alloy.

In an embodiment of the invention, the fourth dielectric layer includes a fourth lower sub-dielectric layer, a fourth upper sub-dielectric layer, and a fourth intermediate layer located between the fourth lower sub-dielectric layer and the fourth upper sub-dielectric layer, the fourth lower sub-dielectric layer is adjacent to the third protective layer, the fourth intermediate layer includes a simple substance or an alloy of niobium, iron, tantalum, nickel, chromium, or zirconium, and a thickness of the fourth intermediate layer is 0 to 30 nm.

In one embodiment of the present invention, the first, second and third protective layers respectively comprise nichrome or nichrome oxide, and the first, second and third seed layers respectively comprise zinc oxide, zinc-aluminum oxide or zinc-tin oxide; the thicknesses of the first seed layer, the first protective layer, the second seed layer, the second protective layer, the third seed layer and the third protective layer are respectively 0-20 nm; the first functional layer, the second functional layer and the third functional layer comprise silver or a copper-silver alloy, respectively; the thicknesses of the first functional layer, the second functional layer and the third functional layer are respectively 0-40 nm.

On the other hand, the third silver glass provided by the embodiment of the invention comprises a glass substrate, and a first dielectric layer, a first seed layer, a first functional layer, a first protective layer, a second dielectric layer, a second seed layer, a second functional layer, a second protective layer, a third dielectric layer, a third sublayer, a third functional layer, a third protective layer and a fourth dielectric layer which are sequentially formed on the same side surface of the glass substrate, wherein the second dielectric layer comprises a second lower sub-dielectric layer, a second upper sub-dielectric layer and a second intermediate layer positioned between the second lower sub-dielectric layer and the second upper sub-dielectric layer, the second lower sub-dielectric layer is adjacent to the first protective layer, the second upper sub-dielectric layer is adjacent to the second seed layer, the second intermediate layer comprises a copper alloy, the mass percentage of copper in the copper alloy is greater than 50%, the copper alloy comprises a silver copper alloy, the thickness of the third middle layer is 0-30 nm.

The technical scheme has the following advantages: the three-silver glass provided by the embodiment of the invention adopts a unique film structure of the composite dielectric layer containing the copper alloy, so that the absorption intensity of each layer corresponding to different spectral bands can be adjusted, and the optical performance of the glass can be improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a three-silver glass provided in an embodiment of the present invention.

Fig. 2 is a schematic structural diagram of another three-silver glass provided in an embodiment of the present invention.

Fig. 3 is a schematic structural diagram of another three-silver glass according to an embodiment of the present invention.

Fig. 4 is a schematic structural diagram of another three-silver glass provided in the embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.

As shown in fig. 1, a third silver glass 500 provided in an embodiment of the present invention includes a glass substrate 10, and a first dielectric layer 11, a first seed layer 12, a first functional layer 13, a first protective layer 14, a second dielectric layer 15, a second seed layer 16, a second functional layer 17, a second protective layer 18, a third dielectric layer 19, a third seed layer 20, a third functional layer 21, a third protective layer 22, and a fourth dielectric layer 23 sequentially formed on the same side of the glass substrate 10. The first dielectric layer 11, the first seed layer 12, the first functional layer 13, the first protective layer 14, the second dielectric layer 15, the second seed layer 16, the second functional layer 17, the second protective layer 18, the third dielectric layer 19, the third seed layer 20, the third functional layer 21, the third protective layer 22, and the fourth dielectric layer 23 may all be made of solid materials.

The glass substrate 10 may be, for example, ordinary glass, colored glass, ultra-white glass, or other glass, and may have a thickness of, for example, 3 to 10 mm. Preferably, the thickness of the glass substrate is 6 mm.

Any of the first dielectric layer 11, the second dielectric layer 15, and the fourth dielectric layer 23 may comprise, for example, a metal or non-metal oxide or nitride, such as silicon nitride (Si)₃N₄) Zinc tin oxide (ZnSnO)_x) Zinc aluminum oxide (AZO), silicon oxide (SiO)₂) Titanium oxide (TiO)₂) Or niobium oxide (Nb)₂O₅) And the like. A first dielectric layer 11 and a second dielectric layerThe thicknesses of the first dielectric layer 15 and the fourth dielectric layer 23 are, for example, 0 to 100nm, respectively.

Any of first seed layer 12, second seed layer 16, and third seed layer 20, for example, comprise a metal, metal alloy, or metal alloy oxide, such as nickel chromium alloy (NiCr) or nickel chromium oxide (NiCrO), respectively_x) And the like. Further, any of the first seed layer 12, the second seed layer 16, and the third seed layer 20, for example, respectively contains zinc oxide (ZnO or ZnAlO)_x) Zinc aluminum oxide (AZO) or zinc tin oxide (ZnSnO)_x) And the like. The first seed layer 12, the second seed layer 16 and the third seed layer 20 have a thickness of 0-20 nm.

Any one of the first functional layer 13, the second functional layer 17, and the third functional layer 21 contains silver (Ag) or copper silver alloy (AgCu), for example. The thicknesses of the first functional layer 13, the second functional layer 17 and the third functional layer 21 are 0 to 40nm, respectively.

Any of the first, second, and third protective layers 14, 18, and 22, for example, respectively, comprise a metal, metal alloy, or metal alloy oxide, such as nickel-chromium alloy (NiCr) or nickel-chromium oxide (NiCrO)_x) And the like. The thicknesses of the first passivation layer 14, the second passivation layer 18, and the third passivation layer 22 are 0 to 20nm, respectively.

As shown in fig. 1, the third dielectric layer 19 is a composite dielectric layer, and for example, includes a third lower sub-dielectric layer 191, a third upper sub-dielectric layer 193, and a third middle layer 192 located between the third lower sub-dielectric layer 191 and the third upper sub-dielectric layer 193, which are sequentially arranged, the third lower sub-dielectric layer 191 is adjacent to the second protective layer 18, the third upper sub-dielectric layer 193 is adjacent to the third sub-layer 20, and the third middle layer 192 includes a copper alloy, for example, a mixture of copper alloys. Preferably, the copper alloy has a copper mass percentage of more than 50%. Further, the copper alloy is, for example, a copper silver alloy (AgCu). The thickness of the third intermediate layer 192 is 0 to 30 nm. In addition, the third lower sub-dielectric layer 191 and the third upper sub-dielectric layer 193 respectively comprise metal nitride or nonmetal nitride. The thicknesses of the third lower sub-dielectric layer 191 and the third upper sub-dielectric layer 193 are 0-100 nm respectively. Therefore, the unique film structure of the composite dielectric layer containing the copper alloy can enable the three-silver Low-E product to freely adjust the absorption strength of each layer, so as to improve the optical performance of the glass.

In another embodiment of the present invention, as shown in fig. 2, the third silver glass 500 further comprises, for example, a first thermal stabilizing medium layer 31 between the first protective layer 14 and the second medium layer 15, and/or a second thermal stabilizing medium layer 32 between the second protective layer 18 and the third medium layer 19, and/or a third thermal stabilizing medium layer 33 between the third protective layer 22 and the fourth medium layer 23. The first thermal stable medium layer 31, the second thermal stable medium layer 32, and the third thermal stable medium layer 33 each include a metal oxide. The first thermal stable medium layer 31, the second thermal stable medium layer 32 and the third thermal stable medium layer 33 can improve the thermal stability of the three-silver glass 500. Specifically, the first thermal dielectric layer 31, the second thermal dielectric layer 32, and the third thermal dielectric layer 33 are each obtained by sputtering a metal oxide ceramic target, and any one of the three layers includes, for example, zinc aluminum oxide (ZnAlOx), zinc tin oxide (ZnSnOx), and titanium oxide (TiOx). In the processing process, the thermal stability medium layer is beneficial to improving the thermal stability of the Low-E film layer and the product, so that the product film layer can better withstand the test of various severe environments in the processing process without being damaged. In addition, the thicknesses of the first thermal stable medium layer 31, the second thermal stable medium layer 32 and the third thermal stable medium layer 33 are 0 to 50nm, respectively. The use of the thermal stability medium layer can improve the thermal stability of the product and also can improve the optical performance of the product. Moreover, because oxygen is an important factor influencing the thermal stability of the product, in the preparation process of the film layer, when the thermal stability medium layer is sputtered by adopting a metal oxide ceramic target, no oxygen or little oxygen is added, so that the diffusion of oxygen to an adjacent target position can be reduced, and the thermal stability of the product is improved.

In another embodiment of the present invention, as shown in fig. 3, the first dielectric layer 11 is a composite dielectric layer, and for example, includes a first lower sub-dielectric layer 111, a first upper sub-dielectric layer 113, and a first intermediate layer 112 located between the first lower sub-dielectric layer 111 and the second upper sub-dielectric layer 113, where the first lower sub-dielectric layer 111 is adjacent to the glass substrate 10, and the first upper sub-dielectric layer 113 is adjacent to the first seed layer 12. The first intermediate layer 112 comprises niobium, iron,Simple substances or alloys of tantalum, nickel, chromium or zirconium. The thickness of the first intermediate layer 112 is, for example, 0 to 30 nm. Either of the first lower sub-dielectric layer 111 and the first upper sub-dielectric layer 113 may comprise, for example, metal or nonmetal oxides and nitrides, such as silicon nitride (Si)₃N₄) Zinc tin oxide (ZnSnO)_x) Zinc aluminum oxide (ZnAlOx), silicon oxide (SiO)₂) Titanium oxide (TiO)₂) Or niobium oxide (Nb)₂O₅) And the like. The thicknesses of the first lower sub-dielectric layer 111 and the first upper sub-dielectric layer 113 are, for example, 0 to 80nm, respectively.

In another embodiment of the present invention, as shown in fig. 3, the second dielectric layer 15 is a composite dielectric layer, and includes, for example, a second lower sub-dielectric layer 151, a second upper sub-dielectric layer 153, and a second intermediate layer 152 located between the second lower sub-dielectric layer 151 and the second upper sub-dielectric layer 153, where the second lower sub-dielectric layer 151 is adjacent to the first protective layer 14, the second upper sub-dielectric layer 153 is adjacent to the second seed layer 16, the second intermediate layer 152 includes a simple substance or an alloy of niobium, iron, tantalum, nickel, chromium, or zirconium, and a thickness of the second intermediate layer 152 is 0 to 30 nm. Any one of the second lower sub-dielectric layer 151 and the second upper sub-dielectric layer 153 may include, for example, metal or nonmetal oxides and nitrides, such as silicon nitride (Si)₃N₄) Zinc tin oxide (ZnSnO)_x) Zinc aluminum oxide (AZO), silicon oxide (SiO)₂) Titanium oxide (TiO)₂) Or niobium oxide (Nb)₂O₅) And the like. The thicknesses of the second lower sub-dielectric layer 151 and the second upper sub-dielectric layer 153 are, for example, 0 to 80nm, respectively.

It should be mentioned here that the structure of the second dielectric layer 15 may also be the same as the structure of the third dielectric layer 19, i.e. the second intermediate layer 152 comprises a copper alloy, for example a copper alloy mixture. Preferably, the copper alloy has a copper mass percentage of more than 50%. Further, the copper alloy is, for example, a copper silver alloy (AgCu). The thickness of the second intermediate layer 152 is 0 to 30 nm. In addition, the second lower sub-dielectric layer 151 and the second upper sub-dielectric layer 153 respectively include metal nitride or nonmetal nitride. The thicknesses of the second lower sub-dielectric layer 151 and the second upper sub-dielectric layer 153 are 0-100 nm respectively. Therefore, the unique film structure of the composite dielectric layer containing the copper alloy can enable the three-silver Low-E product to freely adjust the absorption strength of each layer, so as to improve the optical performance of the glass. In this case, the third dielectric layer may be a single dielectric layer or a composite dielectric layer. When the third dielectric layer is a composite dielectric layer, the layer structure thereof may be the film structure of the copper alloy composite dielectric layer, or may be the same film structure as the first composite dielectric layer. That is, the third silver glass provided by the embodiment of the present invention may be a composite dielectric layer structure in which the second composite dielectric layer is a copper alloy, or a composite dielectric layer structure in which the third composite dielectric layer is a copper alloy, or both the second composite dielectric layer and the third composite dielectric layer are a composite dielectric layer structure including a copper alloy.

In another embodiment of the present invention, as shown in fig. 3, the fourth dielectric layer 23 is a composite dielectric layer, and includes, for example, a fourth lower sub-dielectric layer 231, a fourth upper sub-dielectric layer 233, and a fourth intermediate layer 232 located between the fourth lower sub-dielectric layer 231 and the fourth upper sub-dielectric layer 233, the fourth lower sub-dielectric layer 231 is adjacent to the third protective layer 22, the fourth intermediate layer 232 includes a simple substance or an alloy of niobium, iron, tantalum, nickel, chromium, or zirconium, and the thickness of the second intermediate layer 152 is 0 to 30 nm. Either layer of the fourth lower sub-dielectric layer 231 and the fourth upper sub-dielectric layer 233, for example, comprises a metal or non-metal oxide and nitride, respectively, such as silicon nitride (Si)₃N₄) Zinc tin oxide (ZnSnO)_x) Zinc aluminum oxide (AZO), silicon oxide (SiO)₂) Titanium oxide (TiO)₂) Or niobium oxide (Nb)₂O₅) And the like. The thicknesses of the fourth lower sub-dielectric layer 231 and the fourth upper sub-dielectric layer 233 are, for example, 0 to 80nm, respectively.

In summary, all the film layers of the three-silver glass provided by the embodiment of the invention can be made of solid materials, and the optical performance of the three-silver glass is improved by adopting a unique film layer structure of the composite dielectric layer containing the copper alloy. Compared with the traditional double-silver Low-E (Low-Emissivity glass), the three-silver Low-E product adopting the film layer structure of the composite dielectric layer containing the copper alloy can freely adjust the absorption intensity of each layer, and the absorption of different areas corresponds to different spectral bands. According to the difference of appearance colors required by Low-E, the expected spectrum form can be flexibly adjusted, and under the condition that the appearance color of the glass is the mainstream appearance color in the market, better visible light transmission color can be obtained. Therefore, the three-silver Low-E color of the film layer structure of the composite dielectric layer containing the copper alloy provided by the embodiment of the invention is more neutral, natural and comfortable. In addition, the second dielectric layer and/or the third dielectric layer are/is a film structure of a composite dielectric layer comprising copper alloy, so that the optical performance of the three-silver glass can be further improved. In addition, the first functional layer 13, the second functional layer 17 and the third functional layer 21 are all silver layers, and can additionally reflect infrared heat and prevent the heat from passing through. In addition, each layer can be formed only by adopting a magnetron reactive sputtering deposition method during the production of the three-silver glass, so that the multiple entering and exiting of coating equipment in the production process can be avoided, the production process is simplified, the production cost can be reduced, and the production efficiency can be improved.

In addition, another embodiment of the present invention further provides a method for preparing the tri-silver glass 500. A glass substrate 10 is first provided. Typically, the glass substrate 10 needs to be cleaned, dried, and then transferred to a vacuum chamber coating area. Then, a first dielectric layer 11, a first seed layer 12, a first functional layer 13, a first protective layer 14, a second dielectric layer 15, a second seed layer 16, a second functional layer 17, a second protective layer 18, a third dielectric layer 19, a third sub-layer 20, a third functional layer 21, a third protective layer 22 and a fourth dielectric layer 23 are sequentially deposited on the glass substrate 10 in a magnetron sputtering coating mode. Each layer is formed by magnetron sputtering deposition at room temperature, but after each layer is deposited, post-treatment is required to be performed on the glass substrate 10 on which each layer is formed. The post-treatment method includes, for example, tempering the glass substrate 10 having the layers formed thereon, wherein the tempering temperature is 650 to 700 ℃, and the tempering time is about 1 to 10 minutes; or annealing the glass substrate 10 on which the respective layers are formed, wherein the annealing temperature is 400 to 650 ℃, and the annealing time is 20 minutes to 2 hours. The process for making the tri-silver glass 500 is described in detail below with reference to a specific example.

DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION

The three-silver glass has the film layer structure that from a glass substrate to the outside: si₃N₄(10nm)/NiCr(2nm)/Ag(10nm)/NiCr(0.8nm)/Si₃N₄(88nm)/NiCr(2nm)/Ag(16.7nm)/NiCr(2nm)/Si₃N₄(15nm)/AgCu(8nm)/Si₃N₄(15nm)/NiCr(2nm)/Ag(10nm)/NiCr(0.8nm)/Si₃N₄(10nm)。

The method for preparing the three-silver glass sequentially comprises the following steps:

(1) cleaning and drying the glass substrate, and placing the glass substrate in a vacuum sputtering area;

(2) depositing Si on a glass substrate by magnetron sputtering₃N₄The layer, the target material used is SiAl rotating target, the power supply is intermediate frequency power supply, the frequency is 2000-40000Hz, the power is 10-100 KW, the process gas is the mixed gas of argon and nitrogen, and the deposition is carried out at room temperature;

(3) in Si₃N₄Depositing a NiCr layer on the layer by adopting a magnetron sputtering mode, wherein the target material is a metal NiCr planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, the process gas is pure argon, and the deposition is carried out at room temperature;

(4) depositing an Ag layer on the NiCr layer in a magnetron sputtering mode, wherein the target material is an Ag planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, the process gas is pure argon, and the deposition is carried out at room temperature;

(5) depositing a NiCr layer on the Ag layer in a magnetron sputtering mode, wherein the target material is a metal NiCr planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, the process gas is pure argon, and the deposition is carried out at room temperature;

(6) depositing Si on the NiCr layer by adopting a magnetron sputtering mode₃N₄The layer is deposited at room temperature by using a SiAl rotating target as a target material, a medium-frequency power supply as a power supply, 10-100 KW of power and a mixed gas of argon and nitrogen as a process gas;

(7) in Si₃N₄Depositing a NiCr layer on the layer by adopting a magnetron sputtering mode, wherein the used target material is a metal NiCr planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, and the processThe gas is pure argon and is deposited at room temperature;

(8) depositing an Ag layer on the NiCr layer in a magnetron sputtering mode, wherein the target material is an Ag planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, the process gas is pure argon, and the deposition is carried out at room temperature;

(9) depositing a NiCr layer on the Ag layer in a magnetron sputtering mode, wherein the target material is a metal NiCr planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, the process gas is pure argon, and the deposition is carried out at room temperature;

(10) depositing Si on the NiCr layer by adopting a magnetron sputtering mode₃N₄The layer is deposited at room temperature by using a SiAl rotating target as a target material, a medium-frequency power supply as a power supply, 10-100 KW of power and a mixed gas of argon and nitrogen as a process gas;

(11) in Si₃N₄Depositing an AgCu layer on the layer by adopting a magnetron sputtering mode, wherein the target material is an AgCu planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, the process gas is pure argon, and the AgCu layer is deposited at room temperature;

(12) depositing Si on the AgCu layer by adopting a magnetron sputtering mode₃N₄The layer is deposited at room temperature by using a SiAl rotating target as a target material, a medium-frequency power supply as a power supply, 10-100 KW of power and a mixed gas of argon and nitrogen as a process gas;

(13) in Si₃N₄Depositing a NiCr layer on the layer by adopting a magnetron sputtering mode, wherein the target material is a metal NiCr planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, the process gas is pure argon, and the deposition is carried out at room temperature;

(14) depositing an Ag layer on the NiCr layer in a magnetron sputtering mode, wherein the target material is an Ag planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, the process gas is pure argon, and the deposition is carried out at room temperature;

(15) depositing a NiCr layer on the Ag layer in a magnetron sputtering mode, wherein the target material is a metal NiCr planar target, the power supply is a direct current plus pulse power supply, the power is 1-10 KW, the process gas is pure argon, and the deposition is carried out at room temperature;

(16)depositing Si on the NiCr layer by adopting a magnetron sputtering mode₃N₄The layer, used target are SiAl rotating target, the power is the intermediate frequency power, the power is 10 ~ 100KW, and process gas is the mist of argon gas and nitrogen gas, deposit at room temperature.

In addition, it is understood that the foregoing embodiments are merely exemplary illustrations of the present invention, and technical features are not conflicting, structures are not inconsistent, and the object of the present invention is not violated, and the technical solutions of the embodiments can be arbitrarily combined and used in combination, such as the first thermal stabilizing medium layer 31, the second thermal stabilizing medium layer 32, and the third thermal stabilizing medium layer 33, and the first medium layer 11, the second medium layer 15, and the fourth medium layer 23, and can be arbitrarily combined and used in combination, so as to obtain various glass products, such as one combination form shown in fig. 4, which is not limited by the present invention.

Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.