阅读说明：本技术 一种基于半导体器件的电场强度测量方法 (Electric field strength measuring method based on semiconductor device ) 是由 尹芳辉 王黎明 刘子琛 杨代铭 梅红伟 曹彬 于 2021-05-31 设计创作，主要内容包括：本发明公开了基于半导体器件的电场强度测量方法,包括：S1、从已测得击穿场强的多个不同型号的半导体器件中选择两种不同型号的半导体器件,编号S-(low)、S-(high),对应的击穿场强D-(low)、D-(high)；其中,S-(low)能被待测位置处的场强击穿,S-(high)不能被待测位置处的场强击穿；S2、判断S-(low)与S-(high)之间的击穿场强之差是否小于测量允许误差,若小于,则待测位置处的场强为(D-(high)+D-(low))/2；若不小于,则进入步骤S3；S3、从已测得击穿场强的多个不同型号的半导体器件中选择击穿场强为半导体器件S-(low)与S-(high)的击穿场强均值的半导体器件S-(mid),并放置在待测位置处；S4、判断S-(mid)是否被击穿：若被击穿,则将S-(mid)作为更新的半导体器件S-(low)并返回步骤S2；若未被击穿,则将S-(mid)作为更新的半导体器件S-(high)并返回步骤S2。(The invention discloses an electric field intensity measuring method based on a semiconductor device, which comprises the following steps: s1, selecting two different types of semiconductor devices from the multiple different types of semiconductor devices with the measured breakdown field strength, and numbering S low 、S high Corresponding breakdown field strength D low 、D high (ii) a Wherein S is low Can be broken down by the field strength at the position to be measured, S high Can not be broken down by the field intensity at the position to be measured; s2, judgment S low And S high Whether the difference of breakdown field strengths between the two is less than the measurement allowable error or not, if so, the field strength at the position to be measured is (D) high +D low ) 2; if not, go to step S3; s3, selecting the breakdown field strength as the semiconductor device S from a plurality of different types of semiconductor devices with the measured breakdown field strength low And S high Semiconductor device S of breakdown field intensity mean value mid And is placed at the position to be measuredAt least one of (1) and (b); s4, judgment S mid Whether or not to break down: if broken down, then S mid As a renewed semiconductor device S low And returns to step S2; if not punctured, will S mid As a renewed semiconductor device S high And returns to step S2.)

1. A method for measuring electric field intensity based on a semiconductor device is characterized by comprising the following steps:

s1, selecting two different types of semiconductor devices from the plurality of different types of semiconductor devices with the measured breakdown field intensity, wherein the numbers of the two different types of semiconductor devices are S_low、S_highCorresponding breakdown field strengths of D_low、D_high(ii) a Wherein the semiconductor device S_lowCan be broken down by the field strength at the position to be measured, semiconductor device S_highCan not be broken down by the field intensity at the position to be measured;

s2, judging semiconductor device S_lowAnd a semiconductor device S_highWhether the difference of breakdown field strengths between the two is smaller than the measurement allowable error or not, if so, the field strength at the position to be measured is (D)_high+D_low) 2; if not, go to step S3;

s3, selecting the breakdown field strength as the semiconductor device S from the plurality of semiconductor devices with different models of the measured breakdown field strength_lowAnd a semiconductor device S_highSemiconductor device S of breakdown field intensity mean value_midAnd is placed at the position to be measured;

s4, judging semiconductor device S_midWhether or not to break down: if it is broken down, the semiconductor device S is connected_midAs a renewed semiconductor device S_lowAnd returns to step S2; if not broken down, the semiconductor device S is connected_midAs a renewed semiconductor device S_highAnd returns to step S2.

2. The method of claim 1, wherein the semiconductor device is placed in the electric field by an insulating support member during the whole measurement process.

3. The method of measuring an electric field strength based on a semiconductor device according to claim 1, further comprising: and respectively measuring the field strengths in the directions of the x axis, the y axis and the z axis at the position to be measured according to the methods of the steps S1 to S4, and calculating the three-dimensional field strength at the position to be measured by using the field strengths in the three directions.

4. The method of claim 3, wherein the three-dimensional field strength E-E (E) at the location to be measured_x ²+E_y ²+E_z ²)^0.5Wherein E is_x、E_y、E_zRespectively the field intensity in the x-axis, y-axis and z-axis directions of the position to be measured.

5. The method of measuring electric field strength based on semiconductor device according to claim 3, wherein, when measuring the field strengths in the x-axis, y-axis and z-axis directions at the position to be measured, respectively, in accordance with the method of steps S1 to S4, an insulating support member comprising three mutually perpendicular placing tables extending in the x-axis, y-axis and z-axis directions of a three-axis coordinate system, respectively, is placed at the position to be measured;

when the steps S1 to S4 are performed to measure the field strength in the x-axis direction at the position to be measured, the semiconductor device is placed on the placing stage in the x-axis direction;

when the steps S1 to S4 are performed to measure the y-axis direction field intensity at the position to be measured, the semiconductor device is placed on the placing stage in the y-axis direction;

when the steps S1 to S4 are performed to measure the z-axis direction field strength at the position to be measured, the semiconductor device is placed on the placing stage in the z-axis direction.

6. The method for measuring electric field strength based on a semiconductor device according to claim 1, wherein the step S1 specifically includes:

selecting a semiconductor device S from the semiconductor devices with the measured breakdown field strength₀Starting a test whether the field intensity at the position to be measured can be punctured:

semiconductor device S₀Placing the film at a position to be detected, and judging whether the film is broken down:

if it is broken down, using the semiconductor device S₀As a semiconductor device S_lowThen continue to selectPerforming breakdown test on the semiconductor device with higher breakdown field strength until the semiconductor device which is not broken down by the field strength at the position to be detected is found and used as the initial semiconductor device S_high；

If not broken down, using the semiconductor device S₀As a semiconductor device S_highThen, the semiconductor device with lower breakdown field intensity is continuously selected to carry out the breakdown test until the semiconductor device which can be broken down by the field intensity at the position to be tested is found and is used as the semiconductor device S_low。

7. The method of measuring electric field strength based on a semiconductor device according to claim 1, further comprising, before step S1, the step of measuring breakdown field strengths of a plurality of different types of semiconductor devices:

s01, placing a semiconductor device of a certain model in a uniform electric field along the direction of the electric field in the axial direction, and measuring the breakdown field intensity of the semiconductor device of the model;

and S02, repeating the step S01 to measure the breakdown field strengths of the semiconductor devices of different models.

8. The method of measuring an electric field strength based on a semiconductor device according to claim 7, wherein the uniform electric field in step S01 is constructed by:

establishing a three-dimensional simulation model of the parallel plate capacitor by using finite element analysis software, applying an excitation voltage U to a polar plate at one side of the three-dimensional simulation model, and grounding the polar plate at the other side of the three-dimensional simulation model to perform simulation calculation;

the field intensity E of a certain point in the space between the two polar plates of the three-dimensional simulation model is obtained through simulation calculation₁And defining the deviation coefficient of the point as k, k | (E)₁-E₀)/E₀L, wherein E₀U/H is the theoretical field intensity of the uniform electric field, and H is the distance between two polar plates of the three-dimensional simulation model;

defining the field area with the deviation coefficient k less than or equal to 1 percent as a uniform electric field area.

9. The method of measuring electric field strength based on a semiconductor device according to claim 8, wherein the step of measuring breakdown field strength of a certain type of semiconductor device in step S01 is as follows:

1) looking up a data manual of the semiconductor device of the model to obtain the breakdown field intensity range of the semiconductor device of the model;

2) defining two field strengths E_minAnd E_maxAnd initializing the two field strengths according to the breakdown field strength range, wherein the semiconductor device is in E type_minLower no breakdown, at E_maxA lower breakdown;

3) placing the semiconductor device of the type between two polar plates of a real parallel plate capacitor which is completely the same as the three-dimensional simulation model of the parallel plate capacitor;

4) applying a voltage between the two plates of the real parallel plate capacitor to make the intensity of the uniform electric field be E_mid＝(E_min+E_max) And/2, judging whether the semiconductor device of the model is broken down: if not punctured, updating E_minHas a value of E_midAnd E is_maxThe value of (d) is unchanged; if breakdown, update E_maxHas a value of E_midAnd E is_minThe value of (d) is unchanged;

5) constantly updating E_maxOr E_minUp to E_maxAnd E_minEqual, critical breakdown of the semiconductor device of the type, at which E_midNamely the breakdown field strength of the semiconductor device of the model.

10. The method of measuring an electric field strength based on a semiconductor device according to claim 9, wherein in the step 3), the semiconductor device of the type is placed in a central region of the uniform electric field.

Technical Field

The invention relates to an electric field intensity measuring method, in particular to an electric field intensity measuring method based on a semiconductor device.

Background

The electric field strength is a physical quantity used for representing the strength of an electric field, and the electric field strength is often required to be measured in the field of electric power, such as electric field measurement of a direct current transmission line, surface electric field measurement of electric equipment and the like. The current common electric field measurement methods include photoelectric measurement, ground reference method and suspended conductor method. The main problem of the ground reference method is that the measurement speed is high, only transient signals can be measured, and the measurement error is large. The main problem of the suspended conductor method is that when the suspended conductor is placed in an electric field to be measured, electric field generated by the electric charge induced by the conductor itself is superposed with the original electric field to be measured, so that the electric field is distorted, and the transmission medium also can increase signal distortion, so that the measurement accuracy is poor. The photoelectric measurement method utilizes the Pockels electro-optic effect, transmits optical signals through optical fiber coupling, has good isolation effect, but still does not solve the problem of original electric field distortion caused by a probe.

In actual electric field measurement, because the size of the probe cannot be ignored compared with the size of the electric field, the electric field distortion caused by the probe may be very serious, and the distorted electric field strength measured by the probe may have a huge difference from the actual original electric field strength without introducing the probe.

Disclosure of Invention

In view of this, the invention provides an electric field strength measurement method based on a semiconductor device, so as to solve the problems of low field strength measurement accuracy and large measurement error caused by electric field distortion in the existing measurement method.

A method for measuring electric field intensity based on a semiconductor device comprises the following steps:

s1, selecting two different types of semiconductor devices from the plurality of different types of semiconductor devices with the measured breakdown field intensity, wherein the numbers of the two different types of semiconductor devices are S_low、S_highCorresponding breakdown field strengths of D_low、D_high(ii) a Wherein the semiconductor device S_lowCan be broken down by the field strength at the position to be measured, semiconductor device S_highCan not be broken down by the field intensity at the position to be measured;

s2, judging semiconductor device S_lowAnd a semiconductor device S_highWhether the difference of breakdown field strengths between the two is smaller than the measurement allowable error or not, if so, the field strength at the position to be measured is (D)_high+D_low) 2; if not, go to step S3;

s3, selecting the breakdown field strength as the semiconductor device S from the plurality of semiconductor devices with different models of the measured breakdown field strength_lowAnd a semiconductor device S_highSemiconductor device S of breakdown field intensity mean value_midAnd is placed at the position to be measured;

s4, judging semiconductor device S_midWhether or not to break down: if it is broken down, the semiconductor device S is connected_midAs a renewed semiconductor device S_lowAnd returns to step S2; if not broken down, the semiconductor device S is connected_midAs a renewed semiconductor device S_highAnd returns to step S2.

Compared with the prior art, the technical scheme of the invention has the beneficial effects that:

1) the method of the invention can measure the electric field intensity in a wide range. Because the semiconductor device is characterized in that breakdown occurs under certain reverse voltage to cause functional failure, the breakdown voltage and the breakdown field strength have one-to-one correspondence, and the breakdown voltage of the semiconductor device ranges from several volts to thousands of volts, the corresponding breakdown field strength is wide, and the electric field strength which can be measured by the invention is wide in range;

2) the semiconductor device is low in price, and the semiconductor device is placed at a measuring point during measurement, so that an expensive sensor and other equipment are not needed, and the measurement cost is low;

3) the semiconductor device has small space size which is negligibly small relative to the space size of the electric field to be measured, so that the semiconductor device does not cause the distortion of the electric field and can accurately measure the electric field strength;

4) the method of the invention measures the breakdown field intensity of a series of semiconductor devices in advance, and then can establish the corresponding relation between the model of the semiconductor device and the breakdown field intensity, when measuring the actual electric field intensity, the range of the model of the semiconductor device placed at the measuring point is reduced only by bisection, and then the corresponding breakdown field intensity is found according to the model, so that the actual electric field intensity can be obtained, and the operation is convenient.

Drawings

Fig. 1 is a flowchart of an electric field strength measuring method based on a semiconductor device according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of an insulating support member for placing a semiconductor device according to an embodiment of the present invention.

Detailed Description

The invention is further described with reference to the following figures and detailed description of embodiments.

Fig. 1 is a flowchart of a method for measuring an electric field strength based on a semiconductor device according to an embodiment of the present invention, and referring to fig. 1, the method includes the following steps S1 to S4:

step S1, selecting two different types of semiconductor devices from the plurality of different types of semiconductor devices with the measured breakdown field strength, wherein the numbers of the two different types of semiconductor devices are S_low、S_highCorresponding breakdown field strengths of D_low、D_high(ii) a Wherein the semiconductor device S_lowCan be broken down by the field strength at the position to be measured, semiconductor device S_highCannot be broken down by the field strength at the location to be measured. The following method can be used to select two initial semiconductor devices S having breakdown field strengths satisfying the above conditions_low、S_high：

After the measuring device starts to work, the applied voltage is kept unchanged. A semiconductor device S may be selected in advance from among semiconductor devices whose breakdown field strengths have been measured₀To start to proceed with the position to be measuredTest of field intensity breakdown:

semiconductor device S₀Placing the film at a position to be detected, and judging whether the film is broken down:

if it is broken down, the semiconductor device S is connected₀As a starting semiconductor device S_lowThen, the semiconductor device with higher breakdown field strength is continuously selected to carry out the breakdown test until the semiconductor device which is not broken down by the field strength at the position to be tested is found out and is used as the initial semiconductor device S_high；

If not broken down, the semiconductor device S is connected₀As a starting semiconductor device S_highThen, the semiconductor device with lower breakdown field intensity is continuously selected to carry out the breakdown test until the semiconductor device which can be broken down is found out and is used as the initial semiconductor device S_low。

Thus, the initial semiconductor device S which can be broken down by the field strength at the position to be measured can be selected_lowAnd a semiconductor device S that cannot be broken down_high。

Step S2, judging the semiconductor device S_lowAnd a semiconductor device S_highWhether the difference of breakdown field strengths between the two is smaller than the measurement allowable error or not, if so, the field strength at the position to be measured is (D)_high+D_low) 2; if not, the process proceeds to step S3.

The measurement tolerance is set according to specific field strength measurement requirements. If the difference (absolute value) between the breakdown field strengths of the initially selected two semiconductor devices is smaller than the measurement tolerance, the initial two semiconductor devices S can be directly connected_lowAnd S_highThe mean value of the breakdown field strength is taken as the field strength at the position to be measured. Otherwise, the range is narrowed by bisection, and the semiconductor device continues to be selected, i.e., the process proceeds to step S3.

Step S3, selecting the breakdown field strength as the semiconductor device S from a plurality of different types of semiconductor devices with the measured breakdown field strength_lowAnd a semiconductor device S_highSemiconductor device S of breakdown field intensity mean value_midAnd placed at the location to be measured.

Step (ii) ofS4, judging semiconductor device S_midWhether or not to break down: if it is broken down, the semiconductor device S is connected_midAs a renewed semiconductor device S_lowAnd returns to step S2; if not broken down, the semiconductor device S is connected_midAs a renewed semiconductor device S_highAnd returns to step S2.

By adopting the method, the field intensity of any direction at any position in the electric field can be measured. By using the method, the field intensities in three directions of the three-dimensional coordinate system at a certain point are respectively measured, and the three-dimensional field intensity of the point can be synthesized. Specifically, the field strengths in the x-axis, y-axis and z-axis directions at the position to be measured are measured respectively according to the methods of steps S1 to S4, and the three-dimensional field strength at the position to be measured is calculated by using the field strengths in the three directions. For example, in order to obtain the three-dimensional field intensity of the point to be measured, a three-axis coordinate system may be established with the point to be measured as an origin, the field intensities in the three directions are measured according to the methods of steps S1 to S4, and the field intensities in the three directions are three-dimensionally synthesized to obtain the electric field intensity of the point to be measured. Three-dimensional field intensity E ═ E (E) at the position to be measured_x ²+E_y ²+E_z ²)0.5 of, wherein E_x、E_y、E_zRespectively the field intensity in the x-axis, y-axis and z-axis directions of the position to be measured. When the field strengths in the x-axis direction, the y-axis direction and the z-axis direction at the position to be measured are measured according to the methods of steps S1 to S4, respectively, an insulating support member is placed at the position to be measured, as shown in fig. 2, the insulating support member includes three mutually perpendicular placing tables extending in the x-axis direction, the y-axis direction and the z-axis direction of a three-axis coordinate system, respectively, and when steps S1 to S4 are performed to measure the field strength in the x-axis direction at the position to be measured, the semiconductor device is placed on the placing table in the x-axis direction; when the steps S1 to S4 are performed to measure the y-axis direction field intensity at the position to be measured, the semiconductor device is placed on the placing stage in the y-axis direction; when the steps S1 to S4 are performed to measure the z-axis direction field strength at the position to be measured, the semiconductor device is placed on the placing stage in the z-axis direction. The method can measure the electric field intensity at any position without judging the electric field direction in advance. By arranging a semiconductor device insulating bracket with three channels vertical to each other, any measurement can be performedAnd then three-dimensionally synthesizing to obtain the actual electric field intensity of the position.

In some embodiments, the measuring method further includes steps S01 and S02 of measuring breakdown field strengths of a plurality of different models of semiconductor devices in advance:

s01, placing a certain type of semiconductor device in a uniform electric field along the direction of the electric field in the axial direction, and measuring the breakdown field intensity of the semiconductor device of the type.

And S02, repeating the step S01 to measure the breakdown field strengths of the semiconductor devices of different models.

The uniform electric field can be constructed in the following way:

establishing a three-dimensional simulation model of the parallel plate capacitor by using finite element analysis software, applying an excitation voltage U to a polar plate at one side of the three-dimensional simulation model, and grounding the polar plate at the other side of the three-dimensional simulation model to perform simulation calculation; the field intensity E of a certain point in the space between the two polar plates of the three-dimensional simulation model is obtained through simulation calculation₁And defining the deviation coefficient of the point as k, k | (E)₁-E₀)/E₀L, wherein E₀U/H is the theoretical field intensity of the uniform electric field, and H is the distance between two polar plates of the three-dimensional simulation model; defining the field area with the deviation coefficient k less than or equal to 1 percent as a uniform electric field area.

And manufacturing a real parallel plate capacitor which is identical to the three-dimensional simulation model of the parallel plate capacitor.

The steps of measuring the breakdown field strength of a semiconductor device of a certain model are as follows:

1) looking up a data manual of the semiconductor device of the model to obtain an approximate range of breakdown field intensity of the semiconductor device of the model;

2) defining two field strengths E_minAnd E_maxAnd according to the breakdown field intensity range, giving initial values to the two field intensities, and giving values according to the following steps: semiconductor device of this type is in_minLower no breakdown, at E_maxA lower breakdown;

3) placing the semiconductor device of this type between the two plates of the real parallel plate capacitor, especially in the central region between the two plates, since the central region electric field uniformity will be better;

4) applying a voltage between the two plates of the real parallel plate capacitor to make the intensity of the uniform electric field be E_mid＝(E_min+E_max) And/2, judging whether the semiconductor device of the model is broken down: if not punctured, updating E_minHas a value of E_midAnd E is_maxThe value of (d) is unchanged; if breakdown, update E_maxHas a value of E_midAnd E is_minThe value of (d) is unchanged;

5) constantly updating E_maxOr E_minUp to E_maxAnd E_minEqual, critical breakdown of the semiconductor device of the type, at which E_midNamely the breakdown field strength of the semiconductor device of the model.

The method establishes a relatively ideal uniform electric field area, and arranges a bracket for placing the semiconductor device, wherein the bracket adopts insulating materials without influencing the electric field distribution, and the breakdown field intensity of the semiconductor device can be accurately obtained by a dichotomy.

In a word, the measuring method of the embodiment of the invention adopts the semiconductor device with very small size as a means to measure the electric field intensity, on one hand, the size of the semiconductor device is small enough to not cause electric field distortion, thereby ensuring that the measured electric field intensity is not distorted and providing a premise for accurate measurement; on the basis, as the breakdown voltage and the breakdown field strength have one-to-one correspondence, when the actual electric field strength is measured, the model range of the semiconductor device placed at the measuring point is reduced only by bisection, and the corresponding breakdown field strength is searched according to the model to obtain the actual electric field strength, so that the operation is convenient.

The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several equivalent substitutions or obvious modifications can be made without departing from the spirit of the invention, and all the properties or uses are considered to be within the scope of the invention.