阅读说明：本技术 切割道标记及光刻掩膜版版图的设计方法、设计装置 (Method and device for designing cutting path mark and photoetching mask layout ) 是由 章艳 于 2021-01-08 设计创作，主要内容包括：一种切割道标记及光刻掩膜版版图的设计方法、设计装置,其中所述切割道标记的设计方法,提供第一切割道标记,所述第一切割道标记包括透光的第一部分和不透光的第二部分；对所述第一切割道标记进行反相处理,形成第二切割道标记,所述反相处理包括将所述第一切割道标记中至少部分透光的第一部分转化为不透光的第三部分,将所述第一切割道标记中至少部分不透光的第二部分转化为透光的第四部分。本发明在设计新的切割道标记时,对已有的第一切割道标记进行反相处理既可获得,无需进行繁琐的构图设计和尺寸设计等,极大的简化的设计流程,提高了设计的效率,并且形成的第二切割道标记可以直接用于掩膜板的设计中。(A method and a device for designing a cutting channel mark and a photoetching mask layout are provided, wherein the method for designing the cutting channel mark comprises the steps of providing a first cutting channel mark, wherein the first cutting channel mark comprises a first light-transmitting part and a second light-tight part; and performing phase reversal processing on the first cutting channel mark to form a second cutting channel mark, wherein the phase reversal processing comprises converting at least a part of a light-transmitting first part in the first cutting channel mark into a light-tight third part, and converting at least a part of a light-tight second part in the first cutting channel mark into a light-transmitting fourth part. When a new cutting path mark is designed, the invention can obtain the existing first cutting path mark by carrying out reverse phase processing without carrying out complicated composition design, size design and the like, greatly simplifies the design flow, improves the design efficiency, and can directly use the formed second cutting path mark in the design of a mask plate.)

1. A method for designing a scribe line mark, comprising:

providing a first cut lane marker comprising a first portion that is optically transparent and a second portion that is optically opaque;

and performing phase reversal processing on the first cutting channel mark to form a second cutting channel mark, wherein the phase reversal processing comprises converting at least a part of a light-transmitting first part in the first cutting channel mark into a light-tight third part, and converting at least a part of a light-tight second part in the first cutting channel mark into a light-transmitting fourth part.

2. The method for designing a scribe lane mark according to claim 1, wherein the inversion process: taking the first cutting path mark as a first image layer; covering a second layer on the first layer, wherein the second layer corresponds to the size range of the first cutting path mark which needs to be subjected to phase reversal processing; and carrying out layer operation on the first layer and the second layer of the overlapping part, converting the light-transmitting first part in the overlapping part into a light-transmitting third part, and converting the light-transmitting second part in the overlapping part into a light-transmitting fourth part.

3. The method for designing a scribe lane mark as claimed in claim 2, wherein said overlay operation comprises a boolean operation.

4. The method of claim 3, wherein the Boolean operation comprises a NOT operation.

5. The method for designing a scribe lane mark according to claim 1, wherein the inversion process: selecting the size range of the first cutting path mark needing to be subjected to reverse phase processing; and carrying out non-operation on the first cutting path mark in the selected size range, and converting a light-transmitting first part in the selected first cutting path mark into a light-tight third part, and converting a light-tight second part into a light-transmitting fourth part.

6. The method of claim 1, wherein the first scribe line mark is subjected to an enlarging process before the phase inversion process.

7. The method of claim 2 or 5, wherein all of the first scribe line marks are subjected to a reverse phase process to form second scribe line marks.

8. The method of claim 2 or 5, wherein a portion of the first scribe line marks are processed in reverse phase to form second scribe line marks.

9. The method of claim 1, wherein the first street sign and the second street sign have the same or different functions.

10. A scribe lane marker designed by the method of any one of claims 1 to 9.

11. A design method of a photoetching mask layout is characterized by comprising the following steps:

providing a photoetching mask layout, wherein the photoetching mask layout comprises a plurality of chip areas and cutting street areas positioned between the chip areas, a plurality of first cutting street marks are arranged in the cutting street areas, and the first cutting street marks comprise a light-transmitting first part and a light-tight second part;

and performing phase reversal processing on the plurality of first cutting path marks, and correspondingly forming a plurality of second cutting path marks at the positions where the plurality of first cutting path marks are located, wherein the phase reversal processing comprises converting at least part of light-tight first parts in the first cutting path marks into light-tight third parts, and converting at least part of light-tight second parts in the first cutting path marks into light-tight fourth parts.

12. The method for designing the lithographic reticle layout according to claim 11, wherein the plurality of first street marks are processed in reverse phase together, and a plurality of second street marks are correspondingly formed at positions where the plurality of first street marks are located.

13. The method of designing a lithographic reticle layout of claim 11, wherein the first streets are marked with streets having different roles and/or different sizes.

14. The method for designing the lithographic reticle layout according to claim 11, wherein the scribe lane regions further have a plurality of third scribe lane marks, and the third scribe lane marks are scribe lane marks that do not require inversion processing.

15. The method of claim 12, wherein the chip region and the third scribe lane marks are covered by a mask layer to expose the first scribe lane marks, and the exposed first scribe lane marks are processed in reverse phase.

16. A device for designing a scribe line mark, comprising:

a cutting-street-mark providing unit for providing a first cutting-street mark including a light-transmissive first portion and a light-opaque second portion;

and the reverse-phase processing unit is used for performing reverse-phase processing on the first cutting channel mark to form a second cutting channel mark, and the reverse-phase processing comprises converting at least a part of light-transmitting first part in the first cutting channel mark into a light-transmitting third part and converting at least a part of light-transmitting second part in the first cutting channel mark into a light-transmitting fourth part.

17. The device for designing a street sign according to claim 16, wherein the inversion processing unit performs the inversion processing by: taking the first cutting path mark as a first image layer; covering a second layer on the first layer, wherein the second layer corresponds to the size range of the first cutting path mark which needs to be subjected to phase reversal processing; and carrying out layer operation on the first layer and the second layer of the overlapping part, converting the light-transmitting first part in the overlapping part into a light-transmitting third part, and converting the light-transmitting second part in the overlapping part into a light-transmitting fourth part.

18. The device of claim 17, wherein the overlay operation comprises a boolean operation, and wherein the boolean operation comprises a non-operation.

19. The device for designing a street sign according to claim 16, wherein the inversion processing unit performs the inversion processing by: selecting the size range of the first cutting path mark needing to be subjected to reverse phase processing; and carrying out non-operation on the first cutting path mark in the selected size range, and converting a light-transmitting first part in the selected first cutting path mark into a light-tight third part, and converting a light-tight second part into a light-transmitting fourth part.

20. The device for designing a street sign according to claim 17 or 19, wherein the phase inversion processing unit performs a phase inversion process on a part or all of the first street sign to form a second street sign.

Technical Field

The invention relates to the field of semiconductors, in particular to a method and a device for designing a cutting path mark and a photoetching mask layout.

Background

In semiconductor manufacturing, the photolithography process is the central process step in the production of integrated circuits. The fabrication of semiconductor chips is generally divided into multiple layers, and each layer is patterned to form specific structures, such as contact holes or metal interconnects. The pattern definition of these specific structures is usually performed by a photolithography process, which is a process of transferring the designed structure pattern onto a wafer using a photolithography mask.

Before the chip is manufactured, one or more photoetching masks are designed and manufactured according to the layout of devices, metal wires, connections and the like of each layer on the chip, and then the patterns on the photoetching masks are transferred to a wafer by utilizing a photoetching process. Among them, how to accurately reflect the designed pattern on the photolithography mask and transfer the pattern to the semiconductor wafer is one of the key issues in semiconductor manufacturing.

A photo mask (mask), also called a reticle or a reticle, is a flat plate having a light transmittance for exposure light and having at least one geometric figure thereon having a light-shielding property for exposure light, and is capable of selectively shielding light irradiated onto a photoresist on a wafer surface and finally forming a corresponding pattern on the photoresist on the wafer surface.

The mask is also manufactured by a certain manufacturing process, the design of the mask layout needs to be performed before the mask is manufactured, various cutting path marks need to be designed during the design of the mask layout, but the existing design process of individual cutting path marks is complex.

Disclosure of Invention

The invention aims to solve the technical problem of how to improve the design efficiency of the cutting path mark.

The invention provides a method for designing a cutting path mark, which comprises the following steps:

providing a first cut lane marker comprising a first portion that is optically transparent and a second portion that is optically opaque;

and performing phase reversal processing on the first cutting channel mark to form a second cutting channel mark, wherein the phase reversal processing comprises converting at least a part of a light-transmitting first part in the first cutting channel mark into a light-tight third part, and converting at least a part of a light-tight second part in the first cutting channel mark into a light-transmitting fourth part.

Optionally, the inverting process: taking the first cutting path mark as a first image layer; covering a second layer on the first layer, wherein the second layer corresponds to the size range of the first cutting path mark which needs to be subjected to phase reversal processing; and carrying out layer operation on the first layer and the second layer of the overlapping part, converting the light-transmitting first part in the overlapping part into a light-transmitting third part, and converting the light-transmitting second part in the overlapping part into a light-transmitting fourth part.

Optionally, the layer operation includes boolean operation.

Optionally, the boolean operation comprises a not operation.

Optionally, the inverting process: selecting the size range of the first cutting path mark needing to be subjected to reverse phase processing; and carrying out non-operation on the first cutting path mark in the selected size range, and converting a light-transmitting first part in the selected first cutting path mark into a light-tight third part, and converting a light-tight second part into a light-transmitting fourth part.

Optionally, all the first scribe line marks are subjected to reverse phase processing to form second scribe line marks.

Optionally, a part of the first scribe line marks is processed in reverse phase to form second scribe line marks.

Optionally, the first cutting path mark and the second cutting path mark have the same or different functions.

The invention also provides a design method of the photoetching mask layout, which comprises the following steps:

providing a photoetching mask layout, wherein the photoetching mask layout comprises a plurality of chip areas and cutting street areas positioned between the chip areas, a plurality of first cutting street marks are arranged in the cutting street areas, and the first cutting street marks comprise a light-transmitting first part and a light-tight second part;

and performing phase reversal processing on the plurality of first cutting path marks, and correspondingly forming a plurality of second cutting path marks at the positions where the plurality of first cutting path marks are located, wherein the phase reversal processing comprises converting at least part of light-tight first parts in the first cutting path marks into light-tight third parts, and converting at least part of light-tight second parts in the first cutting path marks into light-tight fourth parts.

Optionally, the first scribe line marks are processed in a reversed phase manner, and a plurality of second scribe line marks are correspondingly formed at positions where the first scribe line marks are located.

Optionally, the first cutting street marks are cutting street marks with different functions and/or different sizes.

Optionally, the scribe lane area further has a plurality of third scribe lane marks, and the third scribe lane marks are scribe lane marks that do not need to be subjected to inversion processing.

Optionally, the chip region and the third scribe line marks are covered by a shielding layer, the first scribe line marks are exposed, and the exposed first scribe line marks are subjected to phase reversal processing.

Compared with the prior art, the technical scheme of the invention has the following advantages:

the invention provides a design method of a cutting channel mark, which comprises a first cutting channel mark and a second cutting channel mark, wherein the first cutting channel mark comprises a first part which is light-transmitting and a second part which is not light-transmitting; and performing phase reversal processing on the first cutting channel mark to form a second cutting channel mark, wherein the phase reversal processing comprises converting at least a part of a light-transmitting first part in the first cutting channel mark into a light-tight third part, and converting at least a part of a light-tight second part in the first cutting channel mark into a light-transmitting fourth part. When a new cutting path mark is designed, the invention can obtain the existing first cutting path mark by carrying out reverse phase processing without carrying out complicated composition design, size design and the like, greatly simplifies the design flow, improves the design efficiency, and can directly use the formed second cutting path mark in the design of a mask plate.

Further, since all the first street marks can be inverted to form the second street marks when the inversion process is performed, the sizes of the second street marks having the same function as the sizes of the first street marks can be easily formed.

Further, when the reverse processing is performed, the second scribe line mark can be formed by performing the reverse processing on a part of the first scribe line mark, and thus the size of the second scribe line mark having the same function as the size of the first scribe line mark can be formed easily, or the size of the second scribe line mark having the same function as the first scribe line mark can be formed.

The invention provides a design method of a photoetching mask layout, which comprises a plurality of chip regions and cutting path regions positioned between the chip regions, wherein the cutting path regions are provided with a plurality of first cutting path marks, and the first cutting path marks comprise a light-transmitting first part and a light-tight second part; and performing phase reversal processing on the plurality of first cutting path marks, and correspondingly forming a plurality of second cutting path marks at the positions where the plurality of first cutting path marks are located, wherein the phase reversal processing comprises converting at least part of light-tight first parts in the first cutting path marks into light-tight third parts, and converting at least part of light-tight second parts in the first cutting path marks into light-tight fourth parts. When carrying out the design of photoetching mask version territory in this application, carry out reverse phase processing to the first cutting way mark of the channel region on having photoetching mask version territory the position correspondence at first cutting way mark place forms new second cutting way mark, the second cutting way mark is as the cutting way mark of the channel region of new photoetching mask version territory, therefore when carrying out the design of mask plate, need not to carry out complicated design (need not to carry out the redesign of figure and need not to carry out the redesign of position and overall arrangement) to the cutting way mark in cutting way region again, therefore very big simplification the design flow of photoetching mask version territory, improved the efficiency of design.

Drawings

FIGS. 1-7 are schematic structural diagrams illustrating a design process of scribe line marks according to an embodiment of the present invention;

FIGS. 8-10 are schematic structural diagrams illustrating a design process of a lithographic reticle layout according to another embodiment of the present invention;

FIG. 11 is a schematic structural diagram of a device for designing scribe line marks according to an embodiment of the present invention.

Detailed Description

As a background, the design process of the existing individual scribe line mark is complicated.

Research shows that when the photoetching mask layout is designed, each cutting channel mark needs to be designed independently, and because a plurality of cutting channel marks are designed in the cutting channel and the types of the cutting channel marks are also many, the design process is complex, and a large amount of time is consumed.

The invention provides a method and a device for designing a cutting channel mark and a photoetching mask plate layout, wherein the method for designing the cutting channel mark comprises the steps of providing a first cutting channel mark, wherein the first cutting channel mark comprises a first light-transmitting part and a second light-tight part; and performing phase reversal processing on the first cutting channel mark to form a second cutting channel mark, wherein the phase reversal processing comprises converting at least a part of a light-transmitting first part in the first cutting channel mark into a light-tight third part, and converting at least a part of a light-tight second part in the first cutting channel mark into a light-transmitting fourth part. When a new cutting path mark is designed, the invention can obtain the existing first cutting path mark by carrying out reverse phase processing without carrying out complicated composition design, size design and the like, greatly simplifies the design flow, improves the design efficiency, and can directly use the formed second cutting path mark in the design of a mask plate.

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In describing the embodiments of the present invention in detail, the drawings are not to be considered as being enlarged partially in accordance with the general scale, and the drawings are only examples, which should not be construed as limiting the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.

Fig. 1-7 are schematic structural diagrams illustrating a design process of scribe line marks according to an embodiment of the present invention.

Referring to fig. 1, a first cutting lane marker 203 is provided, the first cutting lane marker 203 including a first portion 201 that is light transmissive and a second portion 202 that is light opaque.

The first cutting path mark 203 is a mark which needs to be placed in a cutting path area of the photoetching mask layout in the design process of the photoetching mask layout, after the photoetching mask layout is designed, the photoetching mask is manufactured according to the photoetching mask layout, then the manufactured photoetching mask is used for carrying out photoetching technology, and the first cutting path mark on the photoetching mask is transferred to a cutting path of a wafer to form a corresponding cutting path mark. It should be noted that both the design process of the scribe line mark in this embodiment and the design process of the lithographic reticle layout in the subsequent embodiments are performed on EDA design software for integrated circuit fabrication, where the EDA design includes Virtuoso software.

The first scribe line mark 203 is an existing or designed mark. The first scribe line mark 203 may be a mark having different functions or specific functions in the integrated circuit manufacturing, and in a specific embodiment, the first scribe line mark 203 may be an overlay mark for overlay measurement, an alignment mark for alignment, or a measurement mark for electrical measurement. In other embodiments, the first scribe line mark may also be a mark used for other functions in the integrated circuit fabrication. In this embodiment and the following embodiments, the first scribe lane mark 203 is taken as an overlay mark for overlay measurement as an example for explanation.

The first scribe line mark 203 comprises a transparent first portion 201 and a non-transparent second portion 202, the transparent first portion 201 indicates that after the first scribe line mark 203 is manufactured on a photolithographic mask plate, light emitted by an exposure light source can penetrate through the first portion 201 of the first scribe line mark 203 on the photolithographic mask plate to irradiate into a photoresist on the surface of a wafer, and the non-transparent second portion 202 indicates that after the first scribe line mark 203 is manufactured on the photolithographic mask plate, the light emitted by the exposure light source cannot penetrate through the second portion 202 of the first scribe line mark 203 on the photolithographic mask plate, that is, light is shielded.

The specific shape and/or size of the first transparent portion 201 and the second opaque portion 202 of the first street sign 203 are different according to the kind and process requirements of the street sign. In this embodiment, the first scribe line mark 203 includes four light-transmissive first portions 201, the four light-transmissive first portions 201 are not connected to each other and are arranged in a square, and a light-opaque second portion 202 is disposed in the middle and around the four light-transmissive first portions 201.

In specific design, in an embodiment, to facilitate subsequent layer calculation, the first scribe lane mark 203 is represented by or used as a first layer, a first transparent portion 201 and a second opaque portion 202 in the first layer are represented by different filling patterns (for example, in fig. 1, a white strip represents the first transparent portion 201, and a diagonal filling represents the second opaque portion 202), the first transparent portion 201 is marked as a transparent property, and the second opaque portion 202 is marked as an opaque property. In a specific example, the light transmission property is represented by "1" or "light transmission", i.e. the first portion 201 is marked with a light transmission property, e.g. by "1" or "light transmission", and the light non-transmission property can be represented by "0" or "light non-transmission", i.e. the second portion 202 is marked with a light non-transmission property by "0" or "light non-transmission". In other embodiments, the light transmission property and the light non-transmission property can be expressed in other ways.

Referring to fig. 2 and 3, the first scribe lane mark 203 is subjected to a reverse phase process to form a second scribe lane mark 207, and the reverse phase process includes converting the at least partially light-transmissive first portion 201 of the first scribe lane mark 203 into a light-opaque third portion 205, and converting the at least partially light-opaque second portion 202 of the first scribe lane mark 203 into a light-transmissive fourth portion 206.

When designing new cutting street mark in this application, carry out the phase reversal to existing first cutting street mark 203 and both can obtain, need not to carry out loaded down with trivial details composition design and size design etc. very big simplified design flow has improved the efficiency of design to the second cutting street mark 207 that forms can directly be used for in the design of mask plate.

In this embodiment, when performing the inversion process, the second scribe lane 207 can be formed by performing the inversion process on all the first scribe lane marks 203, and thus the sizes of the second scribe lane 207 having the same function as the size of the first scribe lane mark 203 (for example, all the sizes are used for overlay measurement) can be easily formed.

In one embodiment, the inversion process: taking the first cutting path mark 203 as a first image layer; covering a second layer 204 on the first layer, where the second layer 204 corresponds to a size range of the first cut-off mark that needs to be subjected to the inversion processing, in this embodiment, the second layer 204 completely covers the first cut-off mark 203; and performing layer operation on the first layer and the second layer of the overlapped part, converting the light-transmitting first part in the overlapped part into a light-tight third part 205, and converting the light-tight second part in the overlapped part into a light-transmitting fourth part 206 to form a second cutting channel mark 207. The above process makes the inversion process simple.

The second layer 204 is completely opaque or completely transparent, and the second layer 204 is completely marked with an opaque attribute or a transparent attribute (for example, "1" or "transparent" is used to mark the second layer with a transparent attribute, and "0" or "opaque" is used to mark the second layer with a opaque attribute), and is associated with a layer operation rule for performing layer operation (when the second layer 204 covers the first layer, layer operation is performed, and a corresponding layer operation rule is invoked).

The layer operation includes a boolean operation, which in an embodiment includes a non-operation, that is, the mark attribute corresponding to the overlapping portion of the first layer and the second layer is a non-operation, for example, the overlapping portion is a light transmission attribute and a light transmission attribute, the output is opaque, if the overlapping portion is an opaque attribute and a light transmission attribute, the output is light transmission, that is, the light transmission first portion in the overlapping portion of the first layer and the second layer is converted into an opaque third portion 205, and the light transmission second portion in the overlapping portion of the first layer and the second layer is converted into a light transmission fourth portion 206, as shown in fig. 2 and 3, the light transmission first portion 201 in the first scribe line mark 203 in fig. 2 is converted into the opaque third portion 205 in fig. 3, and the light transmission second portion 202 in the first scribe line mark 203 in fig. 2 is converted into the light transmission fourth portion 206 in fig. 3, the opaque third portion 205 and the clear fourth portion 206 constitute a new second street sign 207.

In another embodiment, the inversion process: selecting the size range of the first cutting path mark needing to be subjected to reverse phase processing; and carrying out non-operation on the first cutting path mark in the selected size range, converting a light-transmitting first part in the selected first cutting path mark into a light-tight third part, converting a light-tight second part into a light-transmitting fourth part, and specifically and directly marking the selected first cutting path. The above process makes the inversion process simple.

In other embodiments, a part of the first scribe line marks are processed in reverse phase to form second scribe line marks. In an embodiment, referring to fig. 4 and 5, the second layer 204 only covers part of the first scribe lane mark 203, and when performing the inversion process, only the part of the first scribe lane mark 203 covered by the second layer is subjected to the inversion process (for a specific process of the inversion process, please refer to the description of the corresponding part, which is not described herein), so as to form the second scribe lane mark 207. In a specific embodiment, the second layer 204 covers only the middle portion of the first street mark 203, and exposes the edge portion of the first street mark 203, and the middle portion of the first street mark 203 is processed in reverse phase to form the second street mark 207 shown in fig. 5, where the second street mark 207 in fig. 5 is different from the first street mark 203 in fig. 4 in that the second street mark 207 in fig. 5 is smaller in size than the first street mark 203 in fig. 4, that is, the second street mark 207 different in size from the first street mark 203 can be formed by the reverse phase processing, and the first street mark 203 and the second street mark 207 can have the same function (for example, both are used for overlay measurement).

In another embodiment, referring to fig. 6 and 7, the second layer 204 only covers a part of the first scribe lane mark 203, and the difference from the previous embodiment is that the position of the second layer 204 covering the first scribe lane mark 203 is different, in this embodiment, the second layer 204 only covers the upper part of the first scribe lane mark 203 (refer to fig. 6), and the other part of the first scribe lane mark 203 is not covered, when performing the inversion process, only performing the inversion process on the part of the first scribe lane mark 203 covered by the second layer (the process of the inversion process is described with reference to the corresponding part, which is not repeated here), forming a second scribe lane mark 207 (refer to fig. 7), that is, a second scribe lane mark 207 with a size different from that of the first scribe lane mark 203 can be formed by the inversion process, and the roles of the first scribe lane mark 203 and the second scribe lane mark 207 are also different (for example, the first scribe lane mark 203 is used for overlay measurement, the second scribe lane mark 207 is for alignment or electrical measurement). It should be noted that, in other embodiments, the second layer 204 may also cover only a lower portion, a left portion, a right portion, or other covering manners (for example, cover an upper portion and a lower portion, but expose a middle portion) of the first scribe lane mark 203.

In an embodiment, before the reverse-phase processing, the range of the first street sign is expanded, and after the expansion processing, the expanded first street sign is subjected to the reverse-phase processing to form the second street sign, so that the second street sign 207 with a size larger than that of the first street sign 203 can be formed, and the role of the formed second street sign 207 can be the same as or identical to that of the first street sign 203. The enlarging process includes enlarging a size of the first street sign.

The invention also provides a cutting channel mark formed by the cutting channel mark design method.

Another embodiment of the present invention further provides a method for designing a layout of a lithography reticle, please refer to fig. 8-10.

First, referring to fig. 8, a lithographic reticle layout 100 is provided, where the lithographic reticle layout 100 includes a plurality of chip regions 102 and scribe line regions 101 located between the chip regions 102, the scribe line regions 101 have a plurality of first scribe line marks 203 therein, and the first scribe line marks 103 include a light-transmissive first portion and a light-opaque second portion.

The photoetching mask plate layout is used for manufacturing the photoetching mask plate. The chip region 102 of the lithographic reticle layout 100 corresponds to a chip region on a wafer, the scribe line region 101 corresponds to a scribe line region on the wafer, the chip region is a region for forming a chip or an integrated circuit, and the scribe line region is used for cutting the chip after the integrated circuit is manufactured. The provided photoetching mask layout 100 is an existing or initial photoetching mask layout, a plurality of first cutting channel marks 203 are arranged in a cutting channel area 101 of the photoetching mask layout 100, and the plurality of first cutting channel marks 203 are cutting channel marks which need to be subjected to phase reversal processing.

In one embodiment, the first plurality of street markings 207 are street markings of different roles and/or different sizes.

In an embodiment, the scribe lane area 101 further has a plurality of third scribe lane marks 210, where the third scribe lane marks 210 are scribe lane marks that do not need to be processed in reverse.

Referring to fig. 9 and 10, the first scribe lane marks 203 are subjected to phase inversion processing, and second scribe lane marks 207 are correspondingly formed at positions where the first scribe lane marks 203 are located, where the phase inversion processing includes converting at least a part of light-transmitting first portions of the first scribe lane marks into light-transmitting third portions, and converting at least a part of light-transmitting second portions of the first scribe lane marks into light-transmitting fourth portions.

When carrying out the design of photoetching mask version territory in this application, carry out the antiphase to the first cutting way mark 203 of the channel region on the existing photoetching mask version territory the position correspondence at first cutting way mark 203 forms new second cutting way mark 207, second cutting way mark 207 is as the cutting way mark of the channel region of new photoetching mask version territory, therefore when carrying out the design of mask plate, need not to carry out complicated design (need not to carry out the redesign of figure and need not to carry out the redesign of position and overall arrangement) to the cutting way mark in the cutting way region again, therefore very big simplification the design flow of photoetching mask version territory, improved the efficiency of design.

In an embodiment, the first scribe line marks 203 are processed in a reverse phase manner, and second scribe line marks are correspondingly formed at positions where the first scribe line marks are located, so as to further improve design efficiency. The specific process comprises the following steps: covering the chip region 102 and the third scribe line marks 210 by the shielding layer 211, exposing the first scribe line marks 103, and performing inversion processing on the exposed first scribe line marks 103 (for a specific inversion processing, please refer to the description of the corresponding parts, which is not described herein again).

Another embodiment of the present invention further provides a device for designing a scribe line mark, referring to fig. 11, including:

a cutting street sign providing unit 301 for providing a first cutting street sign comprising a light-transmissive first portion and a light-opaque second portion;

and the reverse-phase processing unit 302 is configured to perform reverse-phase processing on the first scribe line mark to form a second scribe line mark, where the reverse-phase processing includes converting a first portion, which is at least partially transparent, of the first scribe line mark into a third portion, which is not transparent, and converting a second portion, which is at least partially opaque, of the first scribe line mark into a fourth portion, which is transparent.

In an embodiment, the inverting unit 302 performs an inverting process including: taking the first cutting path mark as a first image layer; covering a second layer on the first layer, wherein the second layer corresponds to the size range of the first cutting path mark which needs to be subjected to phase reversal processing; and carrying out layer operation on the first layer and the second layer of the overlapping part, converting the light-transmitting first part in the overlapping part into a light-transmitting third part, and converting the light-transmitting second part in the overlapping part into a light-transmitting fourth part.

In an embodiment, the layer operation includes a boolean operation, and the boolean operation includes a non-operation.

In another embodiment, the process of performing the inversion process by the inversion processing unit 302 includes: selecting the size range of the first cutting path mark needing to be subjected to reverse phase processing; and carrying out non-operation on the first cutting path mark in the selected size range, and converting a light-transmitting first part in the selected first cutting path mark into a light-tight third part, and converting a light-tight second part into a light-transmitting fourth part.

In an embodiment, the reverse-phase processing unit performs reverse-phase processing on part or all of the first scribe line marks to form second scribe line marks.

Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.