阅读说明：本技术 一种可切换式的可重构双工器/带通滤波器 (Switchable reconfigurable duplexer/band-pass filter ) 是由 张巧利 王秉中 于 2020-12-25 设计创作，主要内容包括：本发明公开了一种可切换式的可重构双工器/带通滤波器,属于微波毫米波领域。本发明基于SIW可重构双模谐振器,采用多层结构实现了可重构双工器、不同端口输出的双频带可重构带通滤波器、不同端口输出的单频带可重构带通滤波器等多种工作模式的切换。本发明通过在基片集成波导谐振腔中加载可调电容来实现连续调节各个谐振腔的工作频率和带宽,在输入输出馈线上加载可调电容来实现外部品质因数的调节,并且采用在匹配网络设置PIN二极管作为可切换器件,实现独立地控制各种工作模式。本发明采用多层结构实现双工器和滤波器的设计不仅可以减小器件的平面面积,还可以提高集成化和便携性,应用场景极为广泛。(The invention discloses a switchable reconfigurable duplexer/band-pass filter, and belongs to the field of microwave and millimeter waves. The invention is based on the SIW reconfigurable dual-mode resonator, and adopts a multilayer structure to realize the switching of multiple working modes such as a reconfigurable duplexer, a dual-band reconfigurable band-pass filter output by different ports, a single-band reconfigurable band-pass filter output by different ports and the like. The invention realizes the continuous adjustment of the working frequency and the bandwidth of each resonant cavity by loading the adjustable capacitor in the substrate integrated waveguide resonant cavity, realizes the adjustment of the external quality factor by loading the adjustable capacitor on the input/output feeder line, and realizes the independent control of various working modes by arranging the PIN diode as a switchable device in the matching network. The invention adopts a multilayer structure to realize the design of the duplexer and the filter, not only can reduce the plane area of the device, but also can improve the integration and the portability, and has wide application scenes.)

1. A reconfigurable duplexer/filter with switchable multiple working modes comprises a first metal layer (1), a first dielectric substrate (2), a second metal layer (3), a second dielectric substrate (4) and a third metal layer (5) which are stacked from bottom to top; a first-level metalized through hole array (11) is arranged on the first dielectric substrate (2), the first metal layer (1) is connected with the second metal layer (3) through the first-level metalized through hole array (11), and the first-level metalized through hole array (11) and the first-level metalized through hole array form a first double-mode resonant cavity together; a second-level metalized through hole array (20) is arranged on the second dielectric substrate (4), the second metal layer (3) is connected with the third metal layer (5) through the second-level metalized through hole array (20), and the second-level metalized through hole array and the third metal layer form a second double-mode resonant cavity together;

the primary metalized through hole array (11) and the secondary metalized through hole array (20) are both rectangular arrays, and openings are formed in the two sides of each rectangular array;

four first annular grooves (6) are formed in the middle of the first metal layer (1), and a first variable capacitor (7) is arranged on each first annular groove (6); the two ends of the first variable capacitor (7) are respectively connected with the first metal layers (1) inside and outside the first annular groove (6), and the first metal layer (1) inside the first annular groove (6) is connected to the second metal layer (3) through a first metalized through hole (12) penetrating through the first dielectric substrate (2);

the first metal layer (1) is further provided with a first coplanar waveguide (8), the first coplanar waveguide (8) is an L-shaped coplanar waveguide, a transverse branch of the L-shaped coplanar waveguide penetrates through a left opening of the first-stage metalized through hole array (11) and extends into the L-shaped coplanar waveguide, the tail end of the transverse branch is of a T-shaped structure, two first slot lines (9) are arranged on the longitudinal branch of the T-shaped structure and divide the longitudinal branch of the T-shaped structure into three sections, the longitudinal branches of the T-shaped structure at the two ends are connected with the longitudinal branch of the T-shaped structure at the middle section through second variable capacitors (10), and the longitudinal branches of the T-shaped structure at the two ends are connected with the second metal layer (3) through second metalized through holes (14) penetrating through the first dielectric substrate (2); the tail end of the longitudinal branch of the first coplanar waveguide (8) is connected with a fifth coplanar waveguide (28) through a third metallized through hole (13) which penetrates through the first dielectric substrate (2), the second metal layer (3) and the second dielectric substrate (4);

a second coplanar waveguide (18) and a slot (17) are arranged on the second metal layer (3); the left side of the second coplanar waveguide (18) penetrates through the right openings of the first-level metalized through hole array (11) and the second-level metalized through hole array (20) and extends into the second coplanar waveguide, and the right side of the second coplanar waveguide (18) is smoothly connected with a strip line (19); the other end of the strip line (19) is connected with a third coplanar waveguide (27) through a fourth metallized through hole (24) penetrating through the second dielectric substrate (4); the slot (17) is used for enabling the third metalized through hole (13) to penetrate through and not to be in contact with the second metal layer (3);

four second annular grooves (25) are formed in the middle of the third metal layer (5), and a third variable capacitor (26) is arranged on each second annular groove (25); two ends of the third variable capacitor (26) are respectively connected with the third metal layers (5) inside and outside the second annular groove (25), and the third metal layer (5) inside the second annular groove (25) is connected to the second metal layer (3) through a fifth metallized through hole (21) penetrating through the second dielectric substrate (4);

the third metal layer (5) is also provided with a third coplanar waveguide (27), a fourth coplanar waveguide (31), a fifth coplanar waveguide (28) and a sixth coplanar waveguide (36); the right end of the third coplanar waveguide (27) is provided with an input/output port P1, and the left end is connected with the stripline (19) through a fourth metallized through hole (24);

the fourth coplanar waveguide (31) is of a T-shaped structure, the left end of a transverse branch of the fourth coplanar waveguide is provided with an input/output port P3, and the right side of the transverse branch provided with a longitudinal branch penetrates through an opening of the second-level metallized through hole array (20) and extends into the fourth coplanar waveguide; two second slot lines (32) are arranged on the longitudinal branch of the fourth coplanar waveguide (31), the longitudinal branch of the fourth coplanar waveguide (31) is divided into three sections, and the longitudinal branches at the two ends are respectively connected with the longitudinal branch of the middle section through a fourth variable capacitor (33); the left side of the fourth coplanar waveguide (31) is provided with a third slot line (34) which divides the fourth coplanar waveguide into two sections, and the two sections are connected through a first switchable device (35;

the fifth coplanar waveguide (28) is arranged below the fourth coplanar waveguide (31) in parallel, the left end of the fifth coplanar waveguide is provided with an input/output port P2, the right side of the fifth coplanar waveguide is provided with a fourth slot line (29) which divides the fifth coplanar waveguide into two sections, and the two sections are connected through a second switchable device (30);

the sixth coplanar waveguide (36) is used for connecting the fifth coplanar waveguide (28) and the fourth coplanar waveguide (31), a fifth slot line (37) which divides the sixth coplanar waveguide into two sections is arranged on the sixth coplanar waveguide (36), and the two sections are connected through a third switchable device (38).

2. The reconfigurable duplexer/filter as claimed in claim 1, wherein the first coplanar waveguide (8) is provided with a first metalized via array (15) penetrating through the first dielectric substrate (2) and communicating the first metal layer (1) and the second metal layer (3) at the left side periphery of the longitudinal branch;

second metallized through hole arrays (16) are arranged on the upper side and the lower side of the third coplanar waveguide (27), and the second metallized through hole arrays (16) penetrate through the first dielectric substrate (2) and the second dielectric substrate (4) and are connected with the first metal layer (1) and the third metal layer (5);

and third metalized through hole arrays (23) which penetrate through the second dielectric substrate (4) and are communicated with the third metal layer (5) and the second metal layer (3) are arranged on the upper side and the lower side of the fifth coplanar waveguide (28) and the fourth coplanar waveguide (31).

3. The reconfigurable duplexer/filter as claimed in claim 1 or 2, wherein the first dual-mode resonator and the second dual-mode resonator are both rectangular substrate integrated waveguide resonators.

4. The reconfigurable duplexer/filter as claimed in claim 3, wherein the first dual-mode cavity and the second dual-mode cavity use two modes TE₁₀₂And TE₂₀₁And (5) molding.

5. The reconfigurable duplexer/filter as claimed in claim 1 or 2, wherein the first annular groove (6) and the second annular groove (25) are circular, square or rectangular annular grooves.

6. The reconfigurable duplexer/filter as claimed in claim 1 or 2, wherein the variable capacitance (7, 10, 26, 33) is a varactor or an RF MEMS variable capacitance.

7. The reconfigurable duplexer/filter as claimed in claim 1 or 2, wherein the switchable devices (30, 35, 38) are PIN diodes or MEMS switches.

Technical Field

The invention belongs to the field of microwave and millimeter waves, and particularly relates to a switchable reconfigurable duplexer and a band-pass filter.

Background

The duplexer is an essential component in a radio frequency front-end receiving and transmitting system, and is used as an isolation component to be connected with the receiving and transmitting system and provide a filtering function. With the rapid development of mobile communication systems, the importance of duplexers to dual-band and even multi-band communication systems is increasingly prominent, and multifunctional communication also makes the problems of band congestion, electromagnetic interference and the like increasingly prominent, and brings great difficulty to the separation work of signals. The reconfigurable duplexer can realize the rapid separation of multi-band signals, effectively utilize frequency spectrum and reduce the size area of a circuit, greatly promotes the miniaturization and integration of a radio frequency front-end circuit, and has wide development prospect.

The duplexer generally includes a matching network and two filter units, and thus, the implementation of the reconfigurable duplexer may be divided into a reconfigurable design of the matching network and a reconfigurable design of the filter units. The research difficulty of the reconfigurable duplexer mainly lies in the selection of the channel filtering unit and the matching design of the common connection port. In a conventional fixed-frequency duplexer, two filtering units with different center frequencies are generally implemented by a common matching network, which is usually implemented by a T-branch or a common resonator, but in a tuning process of the reconfigurable duplexer, an input impedance of each channel to a common port changes along with a change of a center frequency of the channel, which may cause mismatch and further deteriorate performance. Therefore, it is difficult to design such a matching network or common resonator for a tunable duplexer with respect to a reconfigurable filter so that the performance thereof satisfies all channels during tuning. In terms of characteristics, the reconfigurable duplexer mainly has frequency reconfigurable, bandwidth reconfigurable or a combination of the two. The main methods for realizing frequency reconfiguration are the technologies of resonator loading varactor, PIN diode, MEMS device adjustment and the like, while bandwidth reconfiguration means that the bandwidth of each channel of the duplexer can be adjusted in a certain range, and is mainly realized by adopting a multimode resonator and the varactor. Up to now, many researches on reconfigurable duplexers at home and abroad are not available, and the performance of the existing reconfigurable duplexer design needs to be improved.

At present, most reconfigurable duplexers can adjust the center frequency and the bandwidth within a specific frequency range, and with the development of Wireless communication technology, some switchable technologies have been applied to switch the working state of the duplexer, such as "Compact switched band filter and application to switched duplexer design" and "a micro switched filter with switching operation models" published in IEEE Microwave Wireless Component Letter journal (vol.26, No.1, pp:13-15, vol.26, No.2, pp: 101) in 2016. But compared with the reconfigurable duplexer, the research on the switchable reconfigurable duplexer and the filter is less.

Disclosure of Invention

Aiming at the problems and the defects in the prior art, the invention provides a switchable reconfigurable duplexer and a filter, which can realize the switching of various working modes such as a reconfigurable duplexer, a dual-band reconfigurable band-pass filter output by different ports, a single-band reconfigurable band-pass filter output by different ports and the like by adopting a multilayer structure based on a SIW (substrate integrated waveguide) reconfigurable dual-mode resonator. The invention realizes the continuous adjustment of the working frequency and the bandwidth of each resonant cavity by loading the adjustable capacitor in the substrate integrated waveguide resonant cavity, realizes the adjustment of the external quality factor by loading the adjustable capacitor on the input/output feeder line, and realizes the independent control of various working modes by arranging the PIN diode as a switchable device in the matching network.

The invention specifically adopts the following technical scheme:

a reconfigurable duplexer/filter with switchable multiple working modes comprises a first metal layer (1), a first dielectric substrate (2), a second metal layer (3), a second dielectric substrate (4) and a third metal layer (5) which are stacked from bottom to top; a first-level metalized through hole array (11) is arranged on the first dielectric substrate (2), the first metal layer (1) is connected with the second metal layer (3) through the first-level metalized through hole array (11), and the first-level metalized through hole array (11) and the first-level metalized through hole array form a first double-mode resonant cavity together; and a second-level metalized through hole array (20) is arranged on the second dielectric substrate (4), the second metal layer (3) is connected with the third metal layer (5) through the second-level metalized through hole array (20), and the second-level metalized through hole array and the third metal layer form a second double-mode resonant cavity together.

The first-stage metalized through hole array (11) and the second-stage metalized through hole array (20) are both rectangular arrays, and openings are formed in the two sides of each rectangular array.

Four first annular grooves (6) are formed in the middle of the first metal layer (1), and a first variable capacitor (7) is arranged on each first annular groove (6); the two ends of the first variable capacitor (7) are respectively connected with the first metal layers (1) inside and outside the first annular groove (6), and the first metal layer (1) inside the first annular groove (6) is connected with the second metal layer (3) through a first metalized through hole (12) penetrating through the first dielectric substrate (2).

The first metal layer (1) is further provided with a first coplanar waveguide (8), the first coplanar waveguide (8) is an L-shaped coplanar waveguide, a transverse branch of the L-shaped coplanar waveguide penetrates through a left opening of the first-stage metalized through hole array (11) and extends into the L-shaped coplanar waveguide, the tail end of the transverse branch is of a T-shaped structure, two first slot lines (9) are arranged on the longitudinal branch of the T-shaped structure and divide the longitudinal branch of the T-shaped structure into three sections, the longitudinal branches of the T-shaped structure at the two ends are connected with the longitudinal branch of the T-shaped structure at the middle section through second variable capacitors (10), and the longitudinal branches of the T-shaped structure at the two ends are connected with the second metal layer (3) through second metalized through holes (14) penetrating through the first dielectric substrate (2); the tail end of the longitudinal branch of the first coplanar waveguide (8) is connected with the fifth coplanar waveguide (28) through a third metallized through hole (13) which penetrates through the first dielectric substrate (2), the second metal layer (3) and the second dielectric substrate (4).

Furthermore, a first metalized through hole array (15) penetrating through the first dielectric substrate (2) and communicating the first metal layer (1) and the second metal layer (3) is arranged on the left periphery of the longitudinal branch of the first coplanar waveguide (8).

A second coplanar waveguide (18) and a slot (17) are arranged on the second metal layer (3); the left side of the second coplanar waveguide (18) penetrates through the right openings of the first-level metalized through hole array (11) and the second-level metalized through hole array (20) and extends into the second coplanar waveguide, and the right side of the second coplanar waveguide (18) is smoothly connected with a strip line (19); the other end of the strip line (19) is connected with a third coplanar waveguide (27) through a fourth metallized through hole (24) penetrating through the second dielectric substrate (4); the slot (17) is used for enabling the third metalized through hole (13) to penetrate through and not to be in contact with the second metal layer (3).

Four second annular grooves (25) are formed in the middle of the third metal layer (5), and a third variable capacitor (26) is arranged on each second annular groove (25); and two ends of the third variable capacitor (26) are respectively connected with the inner and outer third metal layers (5) of the second annular groove (25), and the third metal layer (5) in the second annular groove (25) is connected to the second metal layer (3) through a fifth metallized through hole (21) penetrating through the second dielectric substrate (4).

The third metal layer (5) is also provided with a third coplanar waveguide (27), a fourth coplanar waveguide (31), a fifth coplanar waveguide (28) and a sixth coplanar waveguide (36); and the right end of the third coplanar waveguide (27) is provided with an input/output port P1, and the left end is connected with the stripline (19) through a fourth metallized through hole (24).

Furthermore, second metalized through hole arrays (16) are further arranged on the upper side and the lower side of the third coplanar waveguide (27), and the second metalized through hole arrays (16) penetrate through the first dielectric substrate (2) and the second dielectric substrate (4) and are connected with the first metal layer (1) and the third metal layer (5).

The fourth coplanar waveguide (31) is of a T-shaped structure, the left end of a transverse branch of the fourth coplanar waveguide is provided with an input/output port P3, and the right side of the transverse branch provided with a longitudinal branch penetrates through an opening of the second-level metallized through hole array (20) and extends into the fourth coplanar waveguide; two second slot lines (32) are arranged on the longitudinal branch of the fourth coplanar waveguide (31), the longitudinal branch of the fourth coplanar waveguide (31) is divided into three sections, and the longitudinal branches at the two ends are respectively connected with the longitudinal branch of the middle section through a fourth variable capacitor (33); the left side of the fourth coplanar waveguide (31) is provided with a third slot line (34) dividing the fourth coplanar waveguide into two sections, and the two sections are connected through a first switchable device (35).

The fifth coplanar waveguide (28) is arranged below the fourth coplanar waveguide (31) in parallel, the left end of the fifth coplanar waveguide is provided with an input/output port P2, the right side of the fifth coplanar waveguide is provided with a fourth slot line (29) which divides the fifth coplanar waveguide into two sections, and the two sections are connected through a second switchable device (30).

The sixth coplanar waveguide (36) is used for connecting the fifth coplanar waveguide (28) and the fourth coplanar waveguide (31), a fifth slot line (37) which divides the sixth coplanar waveguide into two sections is arranged on the sixth coplanar waveguide (36), and the two sections are connected through a third switchable device (38).

Furthermore, a third metalized through hole array (23) which penetrates through the second medium substrate (4) and is communicated with the third metal layer (5) and the second metal layer (3) is arranged on the upper side and the lower side of the fifth coplanar waveguide (28) and the fourth coplanar waveguide (31).

Further, the first dual-mode resonant cavity and the second dual-mode resonant cavity are both rectangular substrate integrated waveguide resonant cavities.

Further, the two modes adopted by the first dual-mode resonant cavity and the second dual-mode resonant cavity are TE₁₀₂And TE₂₀₁And (5) molding.

Further, the first annular groove (6) and the second annular groove (25) are circular, square or rectangular annular grooves.

Further, the variable capacitance (7, 10, 26, 33) is a varactor or an RF MEMS variable capacitance.

Further, the switchable device (30, 35, 38) is a PIN diode or a MEMS switch.

The two channels of the reconfigurable duplexer are respectively realized by two reconfigurable band-pass filters working at different central frequencies. The center frequency of the reconfigurable filter of the first channel is determined by the length and the width of the first double-mode resonant cavity, and the center frequency is continuously adjusted by four first variable capacitors (7) arranged on the first metal layer (1). The center frequency of the reconfigurable filter of the second channel is determined by the length and width of the second double-mode resonant cavity, and the center frequency is continuously adjusted by four third variable capacitors (26) arranged on the third metal layer (5). The first channel center frequency and the second channel center frequency can be independently adjusted without mutual influence; because the first channel and the second channel are both realized by the dual-mode resonant cavity, two transmission zeros are respectively arranged at two sides of the passband of each channel, the out-of-band rejection characteristic of the filter and the isolation of the duplexer are effectively improved.

The switching of the work modes of the reconfigurable filter and the reconfigurable duplexer can be realized by changing the work states of the switchable devices (30, 35, 38), and the specific work mode is as follows:

1. when the switchable devices (30 and 35) are in an on state and 38 is in an off state, the working ports are the input/output ports P1, P2 and P3, and the working mode is the reconfigurable duplexer; continuous adjustment of the passband frequency and bandwidth of the first channel is achieved by varying the capacitance value of the variable capacitance (7, 10), and continuous adjustment of the passband frequency and bandwidth of the second channel is achieved by varying the capacitance value of the variable capacitance (26, 33).

2. When the switchable device (35) is in an off state and the switchable devices (30 and 38) are in on states, the working ports are the input/output ports P1 and P2, and the working mode is a reconfigurable device dual-frequency band-pass filter; continuous adjustment of the first passband frequency and bandwidth is achieved by varying the capacitance value of the variable capacitance (7, 10) and continuous adjustment of the second passband frequency and bandwidth is achieved by varying the capacitance value of the variable capacitance (26, 33).

3. When the switchable device (30) is in an on state and the switchable devices (35, 38) are in an off state, the working ports are the input/output ports P1 and P2, and the working mode is the reconfigurable single-frequency band-pass filter. The center frequency of the single-frequency band-pass filter is determined by the size of the first double-mode resonant cavity, and continuous adjustment of the passband frequency and the bandwidth is realized by changing the capacitance value of the variable capacitors (7 and 10).

4. When the switchable device (38) is in an on state and the switchable devices (30, 35) are in an off state, the working ports are the input/output ports P1 and P2, and the working mode is the reconfigurable single-frequency band-pass filter. The center frequency of the single-frequency band-pass filter is determined by the size of the second double-mode resonant cavity, and continuous adjustment of the pass-band frequency and the bandwidth is realized by changing the capacitance value of the variable capacitors (26, 33).

5. When the switchable device (35) is in an on state and the switchable devices (30, 38) are in an off state, the working ports are the input/output ports P1 and P3, and the working mode is the reconfigurable single-frequency band-pass filter. The center frequency of the single-frequency band-pass filter is determined by the size of the second double-mode resonant cavity, and continuous adjustment of the pass-band frequency and bandwidth is achieved by changing the capacitance values of the variable capacitors (26 and 33).

6. Continuous adjustment of the passband frequency and bandwidth over a wide frequency band is achieved by combining the modes of operation (3) and (4).

Compared with the prior art, the invention has the advantages and beneficial effects that:

1. compared with the single-mode filter, the double-mode filter realized by the double-mode resonant cavity reduces the number of required resonators by half, thereby reducing the circuit area of the filter. And also has the advantages of low insertion loss, good selectivity, good harmonic suppression property and the like. The dual-mode resonator is adjustable, the circuit size is reduced, and simultaneously the coupling strength of the filter is changed by respectively adjusting the resonant frequency of each mode, so that the bandwidth of the filter is adjusted, and the loading of a coupling strength adjusting element is saved.

2. The design of adopting multilayer structure to realize duplexer and wave filter not only can reduce the planar area of device, can also improve and integrate and portability, satisfy people to the requirement of higher and higher portability and integration of electronic product especially communication product.

3. The invention can realize the switching among a plurality of working modes such as a duplexer, a double-frequency band-pass filter, a single-frequency band-pass filter and the like, and has wide application scenes. The passband of each channel of the reconfigurable duplexer working mode can independently adjust the frequency and the bandwidth without mutual influence. The reconfigurable dual-frequency band-pass filter can realize various application combinations such as fixing of the first passband and adjustment of the second passband, or fixing of the second passband and adjustment of the first passband, or synchronous or asynchronous adjustment of the first passband and the second passband, or combination of the first passband and the second passband into an adjustable passband. The reconfigurable single-frequency band-pass filter can realize independent output of each port and can realize independent adjustment of frequency and bandwidth.

Drawings

Figure 1 is a three-dimensional schematic diagram of a switchable reconfigurable duplexer/filter;

figure 2(a) is a schematic diagram of a first metal layer of a switchable reconfigurable duplexer/filter;

figure 2(b) is a schematic diagram of a switchable reconfigurable duplexer/filter first dielectric substrate layer;

figure 2(c) is a schematic diagram of a second metal layer of a switchable reconfigurable duplexer/filter;

figure 2(d) is a schematic diagram of a second dielectric substrate layer of a switchable reconfigurable duplexer/filter;

figure 2(e) is a schematic diagram of a third metal layer of a switchable reconfigurable duplexer/filter;

figure 3(a) is a transmission curve with center frequency adjusted separately for the first channel of the reconfigurable duplexer mode;

fig. 3(b) is a transmission characteristic curve when the center frequency is adjusted solely for the second channel of the reconfigurable duplexer mode;

FIG. 4 is a transmission curve when two channels of a reconfigurable duplexer mode independently adjust bandwidth;

FIG. 5 is a graph of transmission characteristics for two passbands of a reconfigurable dual band bandpass filter mode with center frequency adjusted independently;

FIG. 6 is a transmission curve with center frequency adjusted individually for a first pass band of a reconfigurable single frequency bandpass filter mode;

fig. 7 is a transmission characteristic curve when the center frequency is adjusted independently for the second passband of the reconfigurable single frequency bandpass filter mode.

Description of reference numerals: 1 a first metal layer; 2 a first dielectric substrate; 3 a second metal layer; 4 a second dielectric substrate; 5 a third metal layer; 6 a first annular groove; 7 a first variable capacitance; 8 a first coplanar waveguide; 9 a first slot line; 10 a second variable capacitance; 11 a first level metallized via array; 12 a first metallized via; 13 a third metallized via; 14 a second metallized via; 15 a first array of metallized vias; 16 a second array of metallized vias; 17, grooving; 18 a second coplanar waveguide; 19 a strip line; 20 a second level metallized via array; 21 a fifth metallized via; 22 sixth metallized via; 23 a third array of metallized vias; 24 a fourth metallized via; 25 a second annular groove; 26 a third variable capacitance; 27 a third coplanar waveguide; 28 a fifth coplanar waveguide; 29 a fourth slotline; 30 a second switchable device; 31 a fourth coplanar waveguide; 32 a second slot line; 33 a fourth variable capacitance; 34 a third slot line; 35 a first switchable device; 36 a sixth coplanar waveguide; 37 a fifth slotline; 38 a third switchable device.

Detailed Description

The technical solution of the present invention is described in detail below with reference to the accompanying drawings and examples.

Examples

In the present embodiment, a structure of a switchable reconfigurable duplexer/filter is shown in fig. 1, in which the first dielectric substrate (2) and the second dielectric substrate (4) both adopt Rogers Duroid 6002 substrates with a thickness of 0.508mm, and a relative dielectric constant ∈ thereof_r2.9, loss tangent tan δ is 0.0012.

Specifically, in this embodiment, the first dual-mode resonator and the second dual-mode resonator are both rectangular substrate integrated waveguide resonators; the primary metalized through hole array (11) and the secondary metalized through hole array (20) are composed of cuboid metalized through holes, the length and the width of each through hole of each cuboid metalized through hole are respectively 1mm and 0.3mm, and the distance between the centers of the adjacent through holes is 1.8 mm; a length L of the first dual-mode resonant cavity₁19.7mm, width W₁19mm, TE thereof₁₀₂And TE₂₀₁The resonant frequency of the mode is 10 GHz; a length L of the second dual-mode resonant cavity₂17.8mm, width W₁17.3mm, TE thereof₁₀₂And TE₂₀₁The resonant frequency of the mode is 11 GHz; the metalized through holes (12, 21) are cylindrical metalized through holes; the first annular groove (6) and the second annular groove (25) are square; the slot (17) is a circular slot; the metalized through holes (13, 14, 22 and 24) are all cylindrical metalized through holes; the metallized through hole arrays (15, 16, 23) are all composed of cylindrical metallized through holes; the input and output ports P1-P3 are all realized by adopting a coplanar waveguide structure; the second coplanar waveguide (18) is connected with the third coplanar waveguide (27) through a strip line (19) and a fourth metallized through hole (24) to be used as a feed line of an input/output port P1, and the first dual-mode resonant cavity and the second dual-mode resonant cavity can be fed respectively or simultaneously; the fifth coplanar waveguide (28) is used as a feed line of the input/output port P2 and can feed the first dual-mode resonant cavity; the fourth coplanar waveguide (31) is used as a feed line of the input/output port P3 and can feed the second double-mode resonant cavity; the variable capacitors (7, 10, 26, 33) are all varactor diodesTubes with capacitance values of C1, C2, Cout1 and Cout2, respectively; the switchable devices (30, 35, 38) are all PIN diodes numbered PIN1, PIN2 and PIN3 respectively.

The working mode of the switchable reconfigurable duplexer/filter is as follows: the switching among various working modes can be realized by combining the on-off states of the three PIN diodes, the resonant frequencies of the first dual-mode resonant cavity and the second dual-mode resonant cavity can be respectively controlled by adjusting the capacitance values of the variable capacitance diodes (7 and 26), and when the capacitance values C1 and C2 of the variable capacitance diodes (7 and 26) are respectively increased, the resonant frequencies of the first dual-mode resonant cavity and the second dual-mode resonant cavity respectively and independently move towards the low-frequency direction. The external quality factors of the two filters can be respectively changed by adjusting the capacitance values Cout1 and Cout2 of the varactors (10, 33), and the return loss and the transmission characteristic of the filters are adjusted to ensure the stability of the performance of the filters. In addition, by properly adjusting the capacitance values C1, C2, Cout1 and Cout2, adjustment of the bandwidths of the two passbands can also be achieved.

With the above-mentioned relevant parameters determined, the transmission characteristics of the switchable reconfigurable duplexer/filter are shown in fig. 3-7 through electromagnetic simulation.

Fig. 3(a) and (b) show transmission characteristic curves of two channels respectively and independently adjusting center frequencies when the switchable devices PIN1 and PIN2 are on, PIN3 is off, the working ports are input/output ports P1, P2 and P3, and the working mode is the reconfigurable duplexer mode. As can be seen from the figure, when C2 is fixed to be 0pF, and C1 is adjusted from 0.5pF to 0pF, the continuously adjustable range of the center frequency of the first channel of the duplexer is 8GHz-10GHz, the frequency adjustment range reaches 25%, and the variation range of the insertion loss is 2.0dB to 2.5 dB; when C1 is fixed to be 0pF, and C2 is adjusted from 0.15pF to 0pF, the continuously adjustable range of the center frequency of the second channel of the duplexer is 10.4GHz-11GHz, the frequency adjusting range reaches 5.8%, and the variation range of the insertion loss is 2.2dB to 2.5 dB. Fig. 4 shows transmission characteristic curves of two channels for individually adjusting the bandwidth in the reconfigurable duplexer mode, and it can be seen from the graph that when the center frequencies of the two channels are respectively kept constant at 10GH and 11GHz, the continuous adjustment ranges of the relative bandwidths are respectively 1.6% to 2.9%, 1.2% to 2.6%, and the variation range of the insertion loss is 1.2dB to 2.5 dB.

Fig. 5 is a transmission characteristic curve when the PIN2 is off, the PINs 1 and 3 are on, the working ports are input/output ports P1 and P2, and the center frequency of two pass bands is adjusted when the working mode is a reconfigurable dual-band bandpass filter. As can be seen, when the variable capacitor C1 is adjusted from 0.2pF to 0pF, the continuous adjustment range of the center frequency of the first passband is 9.36GHz-10GHz, and when the variable capacitor C2 is adjusted from 0.1pF to 0pF, the continuous adjustment range of the center frequency of the second passband is 10.61GHz-11GHz, and the insertion loss is less than 2.6 dB.

Fig. 6 shows that when PIN1 is on and PINs 2 and 3 are off, the working ports are input/output ports P1 and P2, and the working mode is a reconfigurable single-frequency band-pass filter, as can be seen from the figure, when variable capacitor C1 is adjusted from 0.5pF to 0pF, the continuous adjustment range of the center frequency of the output passband is 8.03GHz-10GHz, and the insertion loss variation range is 1.5dB to 2.4 dB.

Fig. 7 shows transmission characteristic curves when the PIN3 is on and the PINs 1 and 2 are off, the working ports are the input/output ports P1 and P2, and the working mode is a reconfigurable single-frequency band-pass filter, and it can be seen from the graph that when the variable capacitor C2 is adjusted from 0.15pF to 0pF, the continuous adjustment range of the center frequency of the output pass band is 10.3GHz-11GHz, and the insertion loss is less than 2.5 dB.

In addition, by setting the PIN2 to be on and the PIN1 and PIN3 to be off, the working mode of the reconfigurable band-pass filter with the working ports of the input/output ports P1 and P3 can be realized, at the moment, the continuous adjusting range of the central frequency of the output pass band is between 10.0GHz and 11GHz, and meanwhile, the bandwidth of the pass band can also be continuously adjusted; by setting the working ports as the input/output ports P1 and P2, setting the PIN2 to be OFF, then setting the PIN1 to be OFF, the PIN3 to be ON, then setting the PIN1 to be ON, and setting the PIN3 to be OFF, the continuous adjustment of the center frequencies of the two pass bands can be combined to realize the adjustment of the frequency and the bandwidth in the wide frequency band range of 8GHz-11 GHz.

The switchable reconfigurable duplexer and the band-pass filter can be switched among various working modes such as the duplexer and the band-pass filter, the center frequency of a pass band can be tuned in a wider frequency range, the bandwidth can be adjusted, and the switchable reconfigurable duplexer and the band-pass filter have the advantages of stable filtering performance, controllable pass band performance, low insertion loss and the like.