阅读说明：本技术 用于氮化硅和其他基底的导电厚膜浆料 (Conductive thick film pastes for silicon nitride and other substrates ) 是由 U·库马尔 约翰·J·马洛尼 布拉德福德·J·史密斯 庞萨米·帕拉尼萨姆 斯里尼瓦桑·斯里德 于 2019-09-06 设计创作，主要内容包括：用于微电子电路应用的与氮化铝、氧化铝和氮化硅基底兼容的导电厚膜组合物。该导电厚膜组合物包括第一铜粉、第二铜粉和玻璃组分。导电厚膜组合物还包括Cu-2O、Ag和至少一种选自Ti、V、Zr、Mn、Cr、Co和Sn的金属元素。在烧制之后,导电厚膜组合物呈现出改进的薄层电阻率和改进的与下面的基底的粘附力。(Conductive thick film compositions compatible with aluminum nitride, aluminum oxide, and silicon nitride substrates for microelectronic circuit applications. The conductive thick film composition includes a first copper powder, a second copper powder, and a glass component. The conductive thick film composition further comprises Cu 2 O, Ag and at least one metal element selected from Ti, V, Zr, Mn, Cr, Co and Sn. After firing, the conductive thick film composition exhibits improved sheet resistivity and improved adhesion to the underlying substrate.)