阅读说明：本技术 提高半导体部件与中心电极配合度的半导体釉层烧结方法 (Semiconductor glaze layer sintering method for improving matching degree of semiconductor component and central electrode ) 是由 范博全 牟孙攀 任洋 于 2020-12-30 设计创作，主要内容包括：本发明涉及烧结技术领域,具体公开了提高半导体部件与中心电极配合度的半导体釉层烧结方法,用于在瓷管上烧结半导体釉层,其特征在于：先按中心电极形状尺寸制作中心电极蜡模,然后将瓷管与中心电极蜡模适配,在中心电极外锥面与瓷管内锥面的相互接触的空隙部位注入事先配置好的半导体釉质,待半导体釉质自然冷却后,入炉进行加热烧结。所述半导体釉层烧结方法烧结的半导体釉层可以提高半导体部件与中心电极的配合度,从而规避因中心电极与半导体部件配合度不良好造成中心电极与半导体部件间的绝缘电阻增大,提高电嘴的发火性能。(The invention relates to the technical field of sintering, and particularly discloses a semiconductor glaze layer sintering method for improving the matching degree of a semiconductor component and a central electrode, which is used for sintering a semiconductor glaze layer on a porcelain tube and is characterized in that: firstly, manufacturing a central electrode wax mould according to the shape and size of a central electrode, then matching a ceramic tube with the central electrode wax mould, injecting prepared semiconductor enamel into a gap part of an outer conical surface of the central electrode and an inner conical surface of the ceramic tube, and after the semiconductor enamel is naturally cooled, putting the semiconductor enamel into a furnace for heating and sintering. The semiconductor glaze layer sintered by the semiconductor glaze layer sintering method can improve the matching degree of the semiconductor component and the central electrode, so that the phenomenon that the insulation resistance between the central electrode and the semiconductor component is increased due to poor matching degree of the central electrode and the semiconductor component is avoided, and the ignition performance of the electric nozzle is improved.)

1. A method for sintering a semiconductor glaze layer to improve the compatibility of a semiconductor component with a center electrode, which is used for sintering the semiconductor glaze layer (300) on a porcelain tube (100), and is characterized in that: firstly, a central electrode wax mould (200) is manufactured according to the shape and the size of a central electrode, then the ceramic tube (100) is matched with the central electrode wax mould (200), the prepared semiconductor enamel is injected into the mutually contacted gap part of the outer conical surface of the central electrode and the inner conical surface of the ceramic tube (100), and after the semiconductor enamel is naturally cooled, the semiconductor enamel is put into a furnace for heating and sintering.

2. The method for sintering a semiconductor glaze layer for improving the fitting degree of a semiconductor component to a center electrode as claimed in claim 1, wherein: the prepared semiconductor enamel consists of potassium feldspar, quartz, kaolin, magnesium carbonate and calcium carbonate.

3. The method for sintering a semiconductor glaze layer for improving the compatibility of a semiconductor component with a center electrode as set forth in claim 2, wherein: weighing 38-40 parts of potassium feldspar, 42-44 parts of quartz, 7-8 parts of kaolin, 3-4 parts of magnesium carbonate and 5-7 parts of calcium carbonate according to the mass ratio, ball-milling, sieving, drying, cleaning, and then filling into a clean bottle or a sealed plastic bag to obtain the prepared semiconductor enamel.

4. The method for sintering a semiconductor glaze layer for improving the compatibility of a semiconductor component with a center electrode as set forth in claim 3, wherein: after the semiconductor enamel is naturally cooled, the semiconductor enamel is placed on a high-alumina ceramic tile, and the high-alumina ceramic tile with the ceramic tube (100) is placed into a high-temperature furnace for sintering at the speed of one high-alumina ceramic tile every 15 min.

5. The method for sintering a semiconductor glaze layer to improve the fitting degree of a semiconductor component to a center electrode as claimed in claim 4, wherein: in the sintering process, the front section temperature of the high-temperature furnace is controlled to be 950-fold-type 1000 ℃, the middle section temperature is controlled to be 1200-fold-type 1240 ℃, and the rear section temperature is controlled to be 850-fold-type 950 ℃.

Technical Field

The invention relates to the technical field of sintering, in particular to a semiconductor glaze layer sintering method for improving the matching degree of a semiconductor component and a central electrode.

Background

The aircraft engine ignition system is characterized in that high-energy pulsating voltage emitted from an ignition device is transmitted to a central electrode of an ignition electric nozzle through an ignition cable, the central electrode of the ignition electric nozzle discharges to a side electrode through a semiconductor component to break down surrounding air to generate high-energy electric sparks, and an oil-gas mixture in an engine is ignited, so that the aircraft engine is started.

The matching degree of the central electrode and the semiconductor component is an important factor influencing the discharge performance of the electric nozzle, under the condition of good matching degree of the central electrode and the semiconductor component, the insulation resistance between the central electrode and the side electrode conforms to the design rule, and the effective discharge ignition from the central electrode to the side electrode at the ignition end of the electric nozzle can be realized under the design given ignition voltage.

The existing semiconductor part processing method in factory is to sinter the semiconductor glaze layer on the conical surface part and the firing end surface of the porcelain tube, the sintering method is to soak and dip the prepared semiconductor glaze fluid material manually on the part needing to sinter the glaze layer, after the enamel is cooled naturally, the enamel layer is sintered on the porcelain tube at high temperature to form the semiconductor part. In the sintering process, the glaze layer is easy to flow before being solidified, irregular glazes are formed, the glaze layer is uneven, the fired semiconductor glaze layer is high in hardness and brittle and is difficult to eliminate in a polishing mode, and therefore the semiconductor component and the center electrode are not matched tightly. When the fit between the center electrode and the semiconductor element is not tight, there are some slight "gaps" at the contact portions of the semiconductor element and the center electrode, and the presence of these "gaps" increases the insulation resistance from the center electrode to the side electrodes, and as a result of the increase in insulation resistance, a greater breakdown voltage is required, resulting in inefficient ignition when a pulse of a given voltage from the ignition device is electrically transmitted to the discharge end of the ignition nozzle.

Disclosure of Invention

The invention provides a semiconductor glaze layer sintering method different from the prior art, which greatly improves the matching degree of a semiconductor component and a central electrode.

The invention is realized by the following technical scheme:

a method for sintering the enamel layer of semiconductor to increase the match between semiconductor part and central electrode includes such steps as preparing the wax pattern of central electrode, matching the ceramic tube with the wax pattern of central electrode, filling the prepared enamel layer in the gap between the external conic surface of central electrode and the internal conic surface of ceramic tube, natural cooling, and heating in furnace.

By the semiconductor glaze layer sintering method, the semiconductor glaze layer is sintered on the porcelain tube to form the semiconductor component, and the matching degree of the semiconductor component and the central electrode is improved by ensuring the sintering quality of the semiconductor glaze layer.

Further, in order to better implement the present invention, the semiconductor enamel prepared in advance is composed of potassium feldspar, quartz, kaolin, magnesium carbonate, and calcium carbonate.

Furthermore, in order to better realize the invention, 38-40 parts of potassium feldspar, 42-44 parts of quartz, 7-8 parts of kaolin, 3-4 parts of magnesium carbonate and 5-7 parts of calcium carbonate are weighed according to the mass ratio, and are put into a clean bottle or a sealed plastic bag after being ball-milled, sieved, dried and cleaned, so as to obtain the prepared semiconductor enamel.

Further, in order to better implement the invention, the semiconductor enamel is placed on the high-alumina ceramic tile after being naturally cooled, and the high-alumina ceramic tile with the ceramic tube is sent into a high-temperature furnace for sintering at the speed of one high-alumina ceramic tile every 15 min.

Further, in order to better implement the present invention, during the sintering process, the front-stage temperature of the high temperature furnace is controlled at 950-.

Compared with the prior art, the invention has the following advantages and beneficial effects:

(1) according to the semiconductor glaze layer sintering method for improving the matching degree of the semiconductor component and the central electrode, the matching degree of the semiconductor component and the central electrode can be improved by the sintered semiconductor glaze layer, so that the phenomenon that the insulation resistance between the central electrode and the semiconductor component is increased due to poor matching degree of the central electrode and the semiconductor component is avoided, and the ignition performance of the electric nozzle is improved;

(2) the semiconductor glaze layer sintering method for improving the matching degree of the semiconductor component and the central electrode is low in operation difficulty and beneficial to quality control.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

Fig. 1 is a partial cross-sectional schematic view of a fitting structure of a porcelain tube and a center electrode.

FIG. 2 is a schematic view of a partial structure of a semiconductor glaze layer sintered in a fitting gap between a ceramic tube and a central electrode conical surface.

Wherein: 100. a porcelain tube; 200. a central electrode wax mold; 300. a semiconductor glaze layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. The components of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

Example 1:

a method for sintering a semiconductor glaze layer 300 for improving the matching degree of a semiconductor component and a central electrode comprises the steps of firstly manufacturing a central electrode wax pattern 200 according to the shape and the size of the central electrode, then matching a ceramic tube 100 with the central electrode wax pattern 200, injecting semiconductor enamel which is prepared in advance into a gap part of an outer conical surface of the central electrode and an inner conical surface of the ceramic tube 100, placing the semiconductor enamel on a high-alumina ceramic tile after the semiconductor enamel is naturally cooled, and feeding the high-alumina ceramic tile on which the ceramic tube 100 is placed into a high-temperature furnace at the speed of one high-alumina ceramic tile every 15min for sintering.

Wherein, 38-40 parts of potassium feldspar, 42-44 parts of quartz, 7-8 parts of kaolin, 3-4 parts of magnesium carbonate and 5-7 parts of calcium carbonate are weighed according to the mass ratio, and are put into a clean bottle or a sealed plastic bag after ball milling, sieving, drying and cleaning to obtain the prepared semiconductor enamel.

In the sintering process, the front section temperature of the high-temperature furnace is controlled to be 950-fold-type 1000 ℃, the middle section temperature is controlled to be 1200-fold-type 1240 ℃, and the rear section temperature is controlled to be 850-fold-type 950 ℃. With the rise of the temperature in the furnace, the semiconductor glaze layer 300 is gradually solidified and sintered on the porcelain tube 100, the central electrode wax mold 200 is removed by heating and evaporation, and a semiconductor component is formed, and the condition that the semiconductor glaze layer 300 is uneven due to the fact that the semiconductor glaze flows to form a glaze nodule before solidification is avoided due to the effect of the central electrode wax mold 200; and the semiconductor component and the central electrode wax mold 200 are matched for processing, so that the phenomenon that the sintered semiconductor component is not matched with the central electrode in the original semiconductor processing method is avoided. Therefore, the semiconductor component sintered by the sintering method of the semiconductor glaze layer 300 according to the embodiment can be tightly matched with the center electrode, and the ignition performance of the ignition electric nozzle is improved.

The semiconductor component after sintering needs to be subjected to the following quality tests:

1) the position of the semiconductor glaze layer 300 of the part is checked to be correct and the thickness is uniform by 100 percent visual inspection; the surface of the semiconductor glaze layer 300 has no phenomena of scratch, bruise, unfilled corner, crack and the like; the surface of the semiconductor glaze layer 300 has no bulge, bulge and pinhole, and a slight pit is allowed;

2) 100% of the semiconductor parts are inspected by a central electrode of the ignition detection clamp to form a central phi 3 hole, and the semiconductor parts can pass freely to be qualified;

3) extracting 5% of parts from each batch, putting the parts into an ignition detection clamp, and detecting the insulation resistance between the central electrode and the shell by using a 500V digital megohmmeter, wherein the resistance is qualified when the resistance is 0.01M omega-0.1M omega;

4) extracting 5% of parts from each batch, loading the parts into an ignition detection clamp, and determining that the minimum ignition voltage meets 300-1500V on an ignition voltage test bench under the condition of testing the capacitance of 3 muF;

5) and (3) extracting 5% of parts from each batch, loading the parts into an ignition detection clamp, and testing the minimum oil drop ignition voltage to meet 300-1600V on an ignition voltage test bench under the condition of testing the capacitance to be 3 mu F.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are included in the scope of the present invention.