阅读说明：本技术 一种产生准正弦波脉冲电子束的方法、系统和可读介质 (Method, system and readable medium for generating quasi-sine wave pulse electron beam ) 是由 马晓明 杨晓东 冒立军 于 2020-12-07 设计创作，主要内容包括：本发明涉及一种产生准正弦波脉冲电子束的方法、系统和可读介质,包括以下步骤：S1根据离子储存环中离子束的回旋频率计算对电子冷却装置中的电子束进行调制的正弦波电压的频率；S2采用步骤S1中获得的频率对应的正弦波电压对电子束进行调整,产生准正弦波脉冲电子束团；S3获取离子储存环中的离子束的波形图；S4判断准正弦波脉冲电子束团的波形与离子束的波形是否匹配,若否,则对正弦波电压的频率进行调整,重复上述步骤,直至获得与离子束的波形匹配的准正弦波脉冲电子束团,并输出。改变电子冷却装置中的电子束与储存环中的离子束相互作用方式,从而解决了离子束损失、离子束存储寿命短的技术问题。(The invention relates to a method, a system and a readable medium for generating a quasi-sine wave pulsed electron beam, comprising the following steps: s1, calculating the frequency of sine wave voltage for modulating the electron beam in the electron cooling device according to the cyclotron frequency of the ion beam in the ion storage ring; s2, adjusting the electron beam by adopting the sine wave voltage corresponding to the frequency obtained in the step S1 to generate a quasi-sine wave pulse electron beam bunch; s3, acquiring a waveform diagram of the ion beam in the ion storage ring; s4, judging whether the waveform of the quasi sine wave pulse electron bunch is matched with the waveform of the ion beam, if not, adjusting the frequency of the sine wave voltage, repeating the steps until the quasi sine wave pulse electron bunch matched with the waveform of the ion beam is obtained and output. The interaction mode of the electron beam in the electron cooling device and the ion beam in the storage ring is changed, so that the technical problems of ion beam loss and short storage life of the ion beam are solved.)

1. A method of generating a quasi-sinusoidal pulsed electron beam, comprising the steps of:

s1, calculating the frequency of sine wave voltage for modulating the electron beam in the electron cooling device according to the cyclotron frequency of the ion beam in the ion storage ring;

s2, adjusting the electron beam by adopting the sine wave voltage corresponding to the frequency obtained in the step S1 to generate a quasi-sine wave pulse electron beam bunch;

s3, acquiring a waveform diagram of the ion beam in the ion storage ring;

s4, judging whether the waveform of the quasi-sine wave pulse electron bunch is matched with the waveform of the ion beam, if so, outputting the current quasi-sine wave pulse electron bunch, otherwise, returning to the step S1, adjusting the frequency of the sine wave voltage, repeating the steps S1-S4 until the quasi-sine wave pulse electron bunch matched with the waveform of the ion beam is obtained and output.

2. The method of claim 1, wherein the cyclotron frequency f of the ion beam in the ion storage ring in S1 is adjusted_iObtained using the formula:

wherein beta is a relativistic factor, and C is a light velocity of 3 × 10⁸m/s, L is the storage ring perimeter.

3. The method for generating a quasi-sine wave pulsed electron beam according to claim 1, wherein the step of generating the quasi-sine wave pulsed electron beam group in S2 comprises: and triggering a sine wave generating circuit corresponding to the frequency obtained in the step S1, and applying sine wave voltage of the frequency to a control electrode of an electron gun of the electronic cooling device to generate quasi-sine wave pulse electron bunches.

4. The method of generating a quasi-sinusoidal pulsed electron beam according to claim 3, wherein the length and current intensity of the quasi-sinusoidal pulsed electron beam bunch are adjusted by setting a threshold value of the sinusoidal voltage, and the quasi-sinusoidal pulsed electron beam bunch is output when the frequency of the sinusoidal voltage exceeds a preset threshold value.

5. The method of generating a quasi-sinusoidal pulsed electron beam of claim 4, wherein the lower the threshold, the longer the length of the electron beam bunch, the higher the current intensity; the higher the threshold, the shorter the length of the electron bunch, and the lower the current intensity.

6. A system for generating a quasi-sinusoidal pulsed electron beam, comprising:

the frequency calculation module is used for calculating the frequency of sine wave voltage for modulating the electron beam in the electron cooling device according to the cyclotron frequency of the ion beam in the ion storage ring;

the electron beam group generating module is used for adjusting the electron beam according to the sine wave voltage corresponding to the frequency obtained in the frequency calculating module to generate a quasi-sine wave pulse electron beam group;

the ion beam waveform acquisition module is used for acquiring a waveform diagram of the ion beam in the ion storage ring;

and the matching adjustment module is used for judging whether the waveform of the quasi sine wave pulse electron beam group is matched with the waveform of the ion beam, outputting the current quasi sine wave pulse electron beam group if the waveform of the quasi sine wave pulse electron beam group is matched with the waveform of the ion beam, returning to the frequency calculation module if the waveform of the quasi sine wave pulse electron beam group is not matched with the waveform of the ion beam, adjusting the frequency of the sine wave voltage until the quasi sine wave pulse electron beam group matched with the waveform of the ion beam is obtained, and outputting the quasi sine.

7. The system for generating a quasi-sinusoidal pulsed electron beam according to claim 6, wherein the electron beam cloud generating module generates the quasi-sinusoidal pulsed electron beam cloud by: and triggering a sine wave generating circuit corresponding to the frequency obtained in the frequency calculation module, and applying sine wave voltage of the frequency to a control electrode of an electron gun of the electronic cooling device to generate quasi-sine wave pulse electron bunches.

8. The system for generating a quasi-sinusoidal pulsed electron beam according to claim 7, wherein the length and current intensity of the quasi-sinusoidal pulsed electron beam bunch are adjusted by setting a threshold value of the sinusoidal voltage, and the quasi-sinusoidal pulsed electron beam bunch is output when the frequency of the sinusoidal voltage exceeds a preset threshold value.

9. The system for generating a quasi-sine wave pulsed electron beam of claim 8, wherein the lower said threshold, the longer the length of said electron beam bunch, the higher the current intensity; the higher the threshold, the shorter the length of the electron bunch, and the lower the current intensity.

10. A computer-readable storage medium, having stored thereon a computer program for execution by a processor for performing the method of generating a quasi-sinusoidal pulsed electron beam according to any one of claims 1-5.

Technical Field

The invention relates to a method, a system and a readable medium for generating a quasi-sine wave pulse electron beam, belonging to the technical field of accelerator ion beam emission.

Background

The ion storage ring is an accelerator device which can improve the ion beam intensity, energy and beam quality and store the ion beam for a long time. The electron cooling device is a key device for improving the beam current quality of the ion beam in the ion storage ring. The electronic cooling device can reduce the transverse emittance of the ion beam in the storage ring and reduce the transverse size and the divergence angle of the ion beam; meanwhile, the longitudinal momentum dispersion of the ion beam in the storage ring can be reduced, and the speed difference between ions in the ion beam in the storage ring is reduced, so that the longitudinal beam cluster length of the ion beam is reduced. However, when the electron cooling device interacts with the ion storage ring, the phenomenon of unstable beam current is generated, and in the prior art, the method of modulating the direct current electron beam by using asymmetric pulse voltage is mainly adopted for suppression.

The asymmetric pulse voltage waveform is shown in FIG. 1, and positive pulse p in the pulse voltage sequence₁，p₂……p_nTurning on the electron cooling device, emitting electron beam, negative pulse n₁，n₂……n_nThe electronic cooling device is turned off. In the pulsed electron beam emitted by the electron cooling device, the pulsed electron beam is uniformly distributed, and the amplitude of each pulse voltage generating the pulsed electron beam is constant at each moment in the time domain length of the pulse, i.e. from tp in the time domain₀、tp₁.._nIs equal to + Vp at every moment of time₁Since the electron beam intensity is positively correlated with the pulse voltage amplitude, the electron beam intensity generated at each moment is equal, and the impact force of the electron beam group on the ion beam at each moment is also equal. Because the ion beam in the ion storage ring has a Gaussian distribution form, the influence of ion loss at the edge of an ion beam cluster on the service life of the ion beam cannot be overcome when the uniformly distributed pulse electron beam interacts with the Gaussian distribution ion beam.

Disclosure of Invention

In view of the above problems, it is an object of the present invention to provide a method, system and readable medium for generating a quasi-sinusoidal pulsed electron beam, which analyze the influence of an electron beam on the storage life of an ion beam in an ion storage ring by using the characteristic that the impact force of the electron beam on the ion beam changes monotonically at each moment.

In order to achieve the purpose, the invention adopts the following technical scheme: a method of generating a quasi-sinusoidal pulsed electron beam, comprising the steps of: s1, calculating the frequency of sine wave voltage for modulating the electron beam in the electron cooling device according to the cyclotron frequency of the ion beam in the ion storage ring; s2, adjusting the electron beam by adopting the sine wave voltage corresponding to the frequency obtained in the step S1 to generate a quasi-sine wave pulse electron beam bunch; s3, acquiring a waveform diagram of the ion beam in the ion storage ring; s4 judges whether the waveform of the quasi-sine wave pulse electron bunch is matched with the waveform of the ion beam, if yes, the current quasi-sine wave pulse electron bunch is output, if not, the step S1 is returned, the frequency of the sine wave voltage is adjusted, and the steps S1-S4 are repeated until the quasi-sine wave pulse electron bunch matched with the waveform of the ion beam is obtained and output.

Further, for the cyclotron frequency f of the ion beam in the ion storage ring in S1_iObtained using the formula:

beta is a relativistic factor, C is the speed of light 3X 10⁸m/s, L is the storage ring perimeter.

Further, the specific process of generating the quasi-sine wave pulse electron beam bunch in S2 is as follows: the sine wave generating circuit corresponding to the frequency obtained in step S1 is triggered, and a sine wave voltage of the frequency is applied to the control electrode of the electron gun of the electron cooling device, thereby generating a quasi-sine wave pulse electron bunch.

Further, the length and the current intensity of the sine wave pulse electron beam group are adjusted by setting a threshold value of sine wave voltage, and when the frequency of the sine wave voltage exceeds a preset threshold value, the quasi-sine wave pulse electron beam group is output.

Further, the lower the threshold, the longer the electron beam cluster length, the lower the current intensity; the higher the threshold, the shorter the length of the electron bunch, the higher the current intensity.

The invention discloses a system for generating quasi-sine wave pulse electron beam, comprising: the frequency calculation module is used for calculating the frequency of sine wave voltage for modulating the electron beam in the electron cooling device according to the cyclotron frequency of the ion beam in the ion storage ring; the electron beam group generating module is used for adjusting the electron beam according to the sine wave voltage corresponding to the frequency obtained in the frequency calculating module to generate a quasi-sine wave pulse electron beam group; the ion beam waveform acquisition module is used for acquiring a waveform diagram of the ion beam in the ion storage ring; and the matching adjustment module is used for judging whether the waveform of the quasi sine wave pulse electron beam group is matched with the waveform of the ion beam, outputting the current quasi sine wave pulse electron beam group if the waveform of the quasi sine wave pulse electron beam group is matched with the waveform of the ion beam, returning to the frequency calculation module if the waveform of the quasi sine wave pulse electron beam group is not matched with the waveform of the ion beam, adjusting the frequency of the sine wave voltage until the quasi sine wave pulse electron beam group matched with the waveform of the ion beam is obtained, and.

Further, the specific process of generating the quasi-sine wave pulse electron beam cluster in the electron beam cluster generation module is as follows: and triggering a sine wave generating circuit corresponding to the frequency obtained in the frequency calculation module, and applying sine wave voltage of the frequency to a control electrode of an electron gun of the electronic cooling device to generate quasi-sine wave pulse electron bunches.

Further, the length and the current intensity of the sine wave pulse electron beam group are adjusted by setting a threshold value of sine wave voltage, and when the frequency of the sine wave voltage exceeds a preset threshold value, the quasi-sine wave pulse electron beam group is output.

Further, the lower the threshold, the longer the length of the electron bunch, the higher the current intensity; the higher the threshold, the shorter the length of the electron bunch, and the lower the current intensity.

The invention also discloses a computer readable storage medium having a computer program stored thereon, the computer program being executable by a processor to implement any of the above methods for generating a quasi-sinusoidal pulsed electron beam.

Due to the adoption of the technical scheme, the invention has the following advantages:

1. the invention modulates the direct current electron beam generated by an electron cooling device through high-frequency high-voltage sine wave voltage, modulates continuous direct current electron beam into a series of pulse electron beam groups distributed in a quasi sine wave manner, changes the shape distribution and the current intensity of the extracted electron beam, and when the electron beam and the ion beam in an ion storage ring act, because the current of the electron beam generated by the sine wave voltage changes according to a sine wave curve, the impact acting force of each electron beam group on the ion beam also changes according to the shape of the sine wave curve, the electron beam groups act on the ion beam with different impact forces at any time in a time domain, and the influence of the electron beam on the storage life of the ion beam in the storage ring is researched and analyzed by utilizing the characteristic that the electron beam groups have monotonous change on the impact acting force of.

2. The invention enables the quasi-sine wave distributed pulse electron beam form generated by the high-frequency high-voltage sine wave voltage to be closely matched with the Gaussian distributed ion beam form, changes the interaction mode of the electron beam in the electron cooling device and the ion beam in the storage ring, and explores the motion rule of ion beam groups in the storage ring, thereby solving the technical problems of ion beam loss and short ion beam storage life.

Drawings

FIG. 1 is a waveform diagram of an asymmetric pulse voltage in the prior art;

FIG. 2 is a waveform diagram of the sine wave voltage as a whole in one embodiment of the present invention;

FIG. 3 is a waveform diagram of a sine wave voltage in the range of 0-2 π in accordance with an embodiment of the present invention;

FIG. 4 is a diagram illustrating a relationship between a sine wave voltage threshold and an electron beam current according to an embodiment of the present invention, wherein FIG. 4(a) is a waveform diagram of the sine wave voltage, in which a line segment CD is the sine wave voltage threshold; FIG. 4(b) is the intensity of the corresponding electron beam current;

FIG. 5 is a graph showing the relationship between the threshold value of sine wave voltage and the electron beam current in another embodiment of the present invention, wherein FIG. 5(a) is a waveform diagram of sine wave voltage, in which a line segment CD is the threshold value of sine wave voltage; FIG. 5(b) is the intensity of the corresponding electron beam current;

FIG. 6 is a time domain waveform diagram of a quasi-sinusoidal pulsed electron beam generated in one embodiment of the present invention;

FIG. 7 is a graph comparing a quasi-sinusoidal distributed pulsed electron beam waveform with an ion beam waveform in accordance with an embodiment of the present invention;

fig. 8 is a graph comparing a quasi-sinusoidal distributed pulsed electron beam waveform with an ion beam waveform after adjustment of sinusoidal voltage parameters in accordance with an embodiment of the present invention.

Detailed Description

The present invention is described in detail by way of specific embodiments in order to better understand the technical direction of the present invention for those skilled in the art. It should be understood, however, that the detailed description is provided for a better understanding of the invention only and that they should not be taken as limiting the invention. In describing the present invention, it is to be understood that the terminology used is for the purpose of description only and is not intended to be indicative or implied of relative importance.

The invention adopts high-frequency high-voltage sine wave voltage to modulate a direct current electron beam into a quasi sine wave pulse electron beam group, compares the waveform of the generated quasi sine wave distributed pulse electron beam group with the waveform of an ion beam, and adjusts the parameter of the sine wave voltage according to the comparison result, thereby obtaining the quasi sine wave pulse electron beam group which is matched with the ion beam waveform. The method is characterized in that the effect of an electron beam on an ion beam is researched by applying a weak impact action on the edge of ion beam distribution by an electron beam cluster and applying a strong impact action on the center of the ion beam distribution, and the internal mechanism of ion beam cluster loss is explored, so that the effects of reducing ion beam loss and prolonging the service life of the ion beam in an ion storage ring are achieved.

The invention designs the high-frequency high-voltage sine wave modulation generator according to the ion beam current with different energy and different convolution frequency in the ion storage ring, can realize the output of high-voltage sine wave voltage with different frequency and amplitude by adjusting the frequency or amplitude of the trigger driving signal of the high-frequency high-voltage sine wave generator, and the sine wave voltage is applied to the control electrode of the electron gun to modulate the direct current electron beam into a series of discontinuous pulse electron beam groups distributed in quasi-sine wave.

Example one

The embodiment discloses a method for generating a quasi-sine wave pulse electron beam, which comprises the following steps:

s1 calculates a frequency of the sine wave voltage modulating the electron beam in the electron cooling device according to a cyclotron frequency of the ion beam in the ion storage ring.

Cyclotron frequency f of ion beam in ion storage ring_iObtained using the formula:

wherein beta is a relativistic factor, and C is a light velocity of 3 × 10⁸m/s, L is the storage ring perimeter.

For example, if an ion storage ring has a storage ring circumference of 161 meters, the ion beam cyclotron frequency of 7MeV/u energy is 0.227 MHz. Because the energy of the injected ions in the ion storage ring is different, the convolution frequency also has a distribution interval, and the quasi-sine wave distributed electron beams can form effective longitudinal impact on the ion beams with the convolution frequency of 0.2 MHz-1.6 MHz.

S2 adjusts the electron beam using the sine wave voltage corresponding to the frequency obtained in step S1, and generates a quasi-sine wave pulse electron bunch.

The specific process of generating the quasi-sine wave pulse electron beam cluster comprises the following steps: the sine wave generating circuit corresponding to the frequency obtained in step S1 is triggered, and a sine wave voltage of the frequency is applied to the control electrode of the electron gun of the electron cooling device, thereby generating a quasi-sine wave pulse electron bunch.

FIG. 2 is a waveform diagram of the sine wave voltage as a whole in one embodiment of the present invention; FIG. 3 is a waveform diagram of a sine wave voltage in the range of 0-2 π in accordance with an embodiment of the present invention. As shown in FIG. 2, the sine wave voltage corresponding to the sine wave phase from 0 to pi increases from 0 to the maximum value and then decreases from the maximum value to 0, and the sine wave voltage positive half-axis waveform p₁，p₂……p_nStarting the electron gun, negative half-axis waveform n₁，n₂……n_nThe electron gun is turned off. As shown in FIG. 3, when the voltage waveform of the corresponding sine wave is from 0 to pi, the maximum value of the time when the voltage of the sine wave rises from 0 to pi/2 is + vp at the positive half axis_nThen from the maximum value + vp_n0 when reduced to pi, for turning on the electron gunA period; when pi-2 pi, the corresponding sine wave voltage waveform is at the negative half axis, which is the period of closing the electron gun.

In one period T of the sine wave voltage being 1/f:

(1) 0-pi/2 is a sine wave voltage rising stage:

from tp, as shown in FIG. 3₀.._nAt each moment in time, the sinusoidal voltage rises from 0 to a maximum value + vp according to a sinusoidal curve_nThe beam intensity generated by the sine wave voltage also rises from 0 to the maximum according to the sine wave curve, and the impact acting force of the electron beam on the ion beam also rises from 0 to the maximum according to the sine wave curve.

(2) Pi/2-pi is a sine wave voltage reduction stage:

from tp, as shown in FIG. 3_n.._mAt each moment of time, the sinusoidal voltage falls according to a sinusoidal curve from a maximum value + vp_nAnd when the voltage is reduced to 0, the electron beam intensity generated by the sine wave voltage is reduced from the maximum value to 0 according to the sine wave curve, and the impact acting force of the electron beam on the ion beam is reduced from the maximum value to 0 according to the sine wave curve.

(3) Pi-2 pi, the sine wave voltage closes the electron gun at the negative half axis.

Because the impact acting force of each electron beam group on the ion beam also changes according to the shape of the sine wave, the electron beam has impact action on the ion beam in a flow intensity gradual change mode, when the quasi sine wave pulse electron beam is matched with the Gaussian distribution form presented longitudinally by the ion beam, a weak action is produced at the edge of the ion beam distribution, a strong action is produced at the center of the ion beam distribution, and uniform, symmetrical and concentrated impact effect is produced on the ion beam. The loss condition and the storage life problem of the ion beam in the storage ring are researched by utilizing the characteristic that the impact action of the quasi-sine wave distributed pulse electron beam cluster generated by the high-frequency high-voltage sine wave voltage on the ions at each moment is changed along with the time.

The length of the pulse electron bunch and the current intensity of the extracted quasi-sinusoidal wave distribution are related to the threshold value of the sinusoidal wave voltage, so that the length and the current intensity of the pulse electron bunch can be adjusted by adjusting the threshold value of the sinusoidal wave voltage. And outputting the quasi-sine wave pulse electron beam group when the frequency of the sine wave voltage exceeds a preset threshold value.

FIG. 4 is a diagram illustrating a relationship between a sine wave voltage threshold and an electron beam current according to an embodiment of the present invention, wherein FIG. 4(a) is a waveform diagram of the sine wave voltage, in which a line segment CD is the sine wave voltage threshold; fig. 4(b) shows the intensity of the corresponding beam current. Wherein, when the sine wave voltage threshold is U_t1When the sine wave voltage is at A point, the electron gun is turned on, and when the sine wave voltage continuously rises and passes C point, the sine wave voltage is greater than the threshold voltage U_t1Then electron beams are generated, and the electron beams rise to the maximum value along the sine wave curve and then fall to the point D, and are less than the threshold voltage U_t1Stopping the electron beam, and closing the electron gun when the electron beam is continuously reduced to a point B; the length of the extracted pulse electron beam group is delta t1, and the maximum value of the pulse electron beam intensity is I_t1。

FIG. 5 is a graph showing the relationship between the threshold value of sine wave voltage and the electron beam current in another embodiment of the present invention, wherein FIG. 5(a) is a waveform diagram of sine wave voltage, in which a line segment CD is the threshold value of sine wave voltage; fig. 5(b) shows the intensity of the corresponding beam current. Wherein, when the sine wave voltage threshold is U_t2When the voltage of the high-frequency sine wave is at the point A, the electron gun is started, and continuously rises to pass through the point C and is greater than the threshold voltage U_t2The electron beam is led out, rises to the maximum value along the sine wave curve and then falls to the point D, and is less than the threshold voltage U_t2Stopping the electron beam, and continuing to reduce to a point B to close the electron gun; the length of the extracted pulse electron beam group is delta t2, and the maximum value of the pulse electron beam intensity is I_t2。

Is provided with a U_t1<U_t2，U_t1The electron beam cluster length generated is Deltat 1, and the beam current is I_t1；U_t2The electron beam cluster generated has a length Δ t2 and a current I_t2Low threshold voltage U_t1When the electron beam is in use, the length of each electron beam group is long, and the electron beam generated by sine wave voltage is strong; high threshold voltage U_t2Meanwhile, the length of each electron beam group is short, and the intensity of the electron beam generated by the sine wave voltage is small. I.e. the lower the threshold, the longer the length of the electron beam cluster, the higher the current intensity; threshold(s)The higher the value, the shorter the length of the electron bunch, the lower the current intensity. The length and the current intensity of the electron beam bunch can be changed along with the change of the threshold value when the sine wave voltage threshold value is adjusted.

As shown in fig. 6, a time domain waveform diagram of a series of discrete quasi-sinusoidal pulsed electron bunches modulated by sinusoidal voltages with a dc electron beam is shown.

S3 obtains a waveform of the ion beam in the ion storage ring.

S4 judges whether the waveform of the quasi-sine wave pulse electron bunch is matched with the waveform of the ion beam, if yes, the current quasi-sine wave pulse electron bunch is output, if not, the step S1 is returned, the frequency of the sine wave voltage is adjusted, and the steps S1-S4 are repeated until the quasi-sine wave pulse electron bunch matched with the waveform of the ion beam is obtained and output.

Changing the sine wave voltage frequency and amplitude parameter in the step S1 by scanning mode to make the quasi-sine wave distribution form of the electron beam closely match with the Gaussian distribution form of the ion beam, so as to achieve the effect that the quasi-sine wave distribution pulse electron beam led out by the electron gun in the electron cooling device can generate uniform, symmetrical and concentrated impact on the Gaussian distribution ion beam in the storage ring.

The ion beam with specific energy is set to be FWHM-i in full width at half maximum, the ion storage ring is distributed in a certain mode, the sine wave voltage waveform has the characteristic similar to a Gaussian distribution mode, the direct current electron beam is modulated into a quasi sine wave pulse electron beam group by adopting high-frequency high-voltage sine waves, and the voltage parameters of the high-frequency high-voltage sine waves are changed to enable the distribution mode of the electron beam to be closely matched with the distribution mode of the ion beam, so that the ion beam has the uniform, symmetrical and concentrated effect.

As shown in fig. 7, the envelope of the quasi-sinusoidal wave electron beam with the full width at half maximum FWHM-e is larger than the envelope of the ion beam with the gaussian distribution, that is, the full width at half maximum of the electron beam is larger than the full width at half maximum of the ion beam, FWHM-e > FWHM-i, the waveform of the quasi-sinusoidal wave pulsed electron beam is in a non-matching state with the waveform of the ion beam with the gaussian distribution, then the process returns to step S1, the parameter of the sinusoidal wave voltage is adjusted, so that the quasi-sinusoidal wave pulsed electron beam is distributed to the ion beam with the gaussian distribution continuously, and the waveform diagram of the quasi-sinusoidal wave pulsed electron beam finally obtained is shown in fig. 8, as can be seen from fig. 8, the waveform of the quasi-sinusoidal wave pulsed electron beam is substantially matched with the.

The above embodiments describe the characteristics of the waveform of the sine wave output by the high-frequency high-voltage sine wave generator circuit and the waveform of the pulse electron beam signal output by the electron gun, and the parameters of the listed examples can be changed correspondingly according to the experimental test requirements.

Example two

Based on the same inventive concept, the present embodiment discloses a system for generating a quasi-sine wave pulsed electron beam, comprising:

the frequency calculation module is used for calculating the frequency of sine wave voltage for modulating the electron beam in the electron cooling device according to the cyclotron frequency of the ion beam in the ion storage ring;

the electron beam group generating module is used for adjusting the electron beam according to the sine wave voltage corresponding to the frequency obtained in the frequency calculating module to generate a quasi-sine wave pulse electron beam group;

the ion beam waveform acquisition module is used for acquiring a waveform diagram of the ion beam in the ion storage ring;

and the matching adjustment module is used for judging whether the waveform of the quasi sine wave pulse electron beam group is matched with the waveform of the ion beam, outputting the current quasi sine wave pulse electron beam group if the waveform of the quasi sine wave pulse electron beam group is matched with the waveform of the ion beam, returning to the frequency calculation module if the waveform of the quasi sine wave pulse electron beam group is not matched with the waveform of the ion beam, adjusting the frequency of the sine wave voltage until the quasi sine wave pulse electron beam group matched with the waveform of the ion beam is obtained, and.

The specific process of generating the quasi-sine wave pulse electron beam cluster in the electron beam cluster generating module is as follows: and triggering a sine wave generating circuit corresponding to the frequency obtained in the frequency calculation module, and applying sine wave voltage of the frequency to a control electrode of an electron gun of the electronic cooling device to generate quasi-sine wave pulse electron bunches.

The length and the current intensity of the sine wave pulse electron beam group can be adjusted by setting a threshold value of sine wave voltage, and the quasi sine wave pulse electron beam group is output when the frequency of the sine wave voltage exceeds a preset threshold value. The lower the threshold value, the longer the length of the electron beam cluster, the higher the current intensity; the higher the threshold, the shorter the length of the electron bunch, and the lower the current intensity.

EXAMPLE III

Based on the same inventive concept, the present embodiment discloses a computer-readable storage medium having a computer program stored thereon, the computer program being executed by a processor to implement the method of generating a quasi-sinusoidal pulsed electron beam according to any one of the first to the second embodiments.

The electron beam cluster acts on the ion beam at any time in a time domain with different impact forces, and the influence of the electron beam on the storage life of the ion beam in the storage ring is researched and analyzed by utilizing the characteristic that the electron beam cluster has monotonous change on the impact force of the ion beam at each time. In addition, the invention closely matches the pulse electron beam form with quasi-sine wave distribution with the ion beam form with Gaussian distribution, changes the interaction mode of the electron beam in the electron cooling device and the ion beam in the storage ring, and explores the motion rule of the ion beam group in the storage ring, thereby realizing the effects of reducing the ion beam loss and prolonging the storage life of the ion beam.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the embodiments of the invention without departing from the spirit and scope of the invention, which is to be covered by the claims. The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application should be defined by the claims.