阅读说明：本技术 一种基于相变材料的开关式的光波导器件及制作方法 (Switch type optical waveguide device based on phase change material and manufacturing method ) 是由 郑分刚 张桂菊 王锐 吕元帅 于 2020-12-28 设计创作，主要内容包括：本发明公开了一种基于相变材料的开关式的光波导器件,包括光栅结构、光学薄膜增强层、脊结构、薄膜结构与衬底结构,所述衬底结构上设置有薄膜结构,所述薄膜结构上面中部设置有脊结构,所述脊结构设置有光学薄膜增强层,所述光学薄膜增强层上设置有光栅结构,所述光波导器件的一端面由模式波入射,经过波导后,在光波导器件的另一端面出射波。通过上述方式,本发明能够通过将该材料覆盖至硅波导上形成复合波导结构,切换相变材料的相态就可以切换不同状态的光信号传播,即实现了利用一种结构同时具有时分和波分复用的功能。(The invention discloses a switch type optical waveguide device based on a phase change material, which comprises a grating structure, an optical film enhancement layer, a ridge structure, a film structure and a substrate structure, wherein the substrate structure is provided with the film structure, the ridge structure is arranged in the middle of the upper surface of the film structure, the ridge structure is provided with the optical film enhancement layer, the optical film enhancement layer is provided with the grating structure, one end surface of the optical waveguide device is incident from a mode wave, and the wave is emitted from the other end surface of the optical waveguide device after passing through a waveguide. Through the mode, the composite waveguide structure can be formed by covering the material on the silicon waveguide, and the optical signal propagation in different states can be switched by switching the phase state of the phase change material, namely, the optical signal propagation with time division and wavelength division multiplexing functions can be realized by utilizing one structure.)

1. The utility model provides an optical waveguide device of on-off based on phase change material, its characterized in that includes grating structure, optical film enhancement layer, spine structure, film structure and substrate structure, the structural film structure that is provided with of substrate, the middle part is provided with spine structure above the film structure, spine structure is provided with the optical film enhancement layer, be provided with the grating structure on the optical film enhancement layer, an terminal surface of optical waveguide device is incided by the mode wave, behind the waveguide, at another terminal surface outgoing wave of optical waveguide device.

2. A phase change material based switched optical waveguide device according to claim 1 wherein: the optical film enhancement layer constitutes a grating structure transition enhancement layer.

3. A phase change material based switched optical waveguide device according to claim 2 wherein: the optical film enhancement layer is made of optical coating materials such as MgF2, Al2O3, ZnO and the like.

4. A phase change material based switched optical waveguide device according to claim 1 wherein: the ridge structure is made of silicon material, and the width of the ridge structure is the same as that of the grating structure.

5. A phase change material based switched optical waveguide device according to claim 1 wherein: the thin film structure material is a permeable material such as silicon.

6. A phase change material based switched optical waveguide device according to claim 1 wherein: the substrate material may be a silicon dioxide material.

7. A phase change material based switched optical waveguide device according to claim 1 wherein: the incident wavelength of the mode wave is 0.8-1.68 mu m.

8. A manufacturing method of a switch type optical waveguide device based on a phase-change material is characterized by comprising the following steps:

(1) determining a spectrally selected wavelength for time division multiplexing;

(2) selecting a medium and a phase change material for a waveguide layer structure of the spectral selector;

(3) calculating and designing the height, duty ratio and period of a grating layer, the thickness of an enhanced transition layer, the width and thickness of a ridge structure and a thin film structure layer under the crystalline state and the amorphous state of the phase-change material according to the required central wavelength and bandwidth of the spectrum selector;

(4) evaporating a corresponding film layer on the substrate according to the material and thickness parameters of each waveguide layer obtained in the steps (2) and (3);

(5) and etching the ridge waveguide thin film layer and the enhancement layer according to the set film layer width and the duty ratio and thickness of the grating layer, and preparing the phase-change material grating strip.

9. The method of claim 8, wherein the phase change material based optical waveguide device comprises: the method adopted in the step (5) can be ultraviolet lithography, nano imprinting, inductively coupled plasma etching, focused ion beam etching or electron beam exposure and the like.

Technical Field

The invention relates to the field of design of micro-nano optical devices, in particular to a switch type optical waveguide device based on a phase change material.

Background

With the rapid development of optical communication technology, big data processing technology and micro-nano photonics technology and the urgent need of people for miniaturization of optical elements and integration of optical systems, the research design and preparation of multifunctional micro-nano optical devices become the focus of wide attention in academic and industrial fields, and optical components with various complex functions are emerging continuously. The spectrum selector selects a light source with a specific wavelength in an operating waveband and cuts off incident light with other wavelengths. A traditional optical filter mainly structurally achieves a filtering effect by evaporating a plurality of layers of high-refractive-index and low-refractive-index interphase dielectric layers on one side of an optical lens, and is single in function and application range.

Disclosure of Invention

The invention aims to provide a switch type optical waveguide device based on a phase change material, which can form a composite waveguide structure by covering the material on a silicon waveguide, and can switch optical signal propagation in different states by switching the phase state of the phase change material, namely, the device has the functions of time division and wavelength division multiplexing by utilizing one structure.

In order to solve the technical problems, the invention adopts a technical scheme that: the utility model provides an optical waveguide device of switch mode based on phase change material, includes grating structure, optical film enhancement layer, spine structure, film structure and substrate structure, the structural film structure that is provided with of substrate, the middle part is provided with spine structure above the film structure, spine structure is provided with the optical film enhancement layer, be provided with the grating structure on the optical film enhancement layer, an terminal surface of optical waveguide device is incided by the mode wave, behind the waveguide, at another terminal surface outgoing wave of optical waveguide device.

Further, the optical film enhancement layer forms a grating structure transition enhancement layer.

Furthermore, the optical film enhancement layer is an optical coating material such as MgF2, A l2O3, ZnO and the like.

Further, the ridge structure is made of silicon material, and the width of the ridge structure is the same as that of the grating structure.

Furthermore, the thin film structure material is a permeable material such as silicon.

Further, the substrate material may be a silicon dioxide material.

Furthermore, the incident wavelength of the mode wave is 0.8-1.68 μm.

A manufacturing method of a switch type optical waveguide device based on a phase change material comprises the following steps:

(1) determining a spectrally selected wavelength for time division multiplexing;

(2) selecting a medium and a phase change material for a waveguide layer structure of the spectral selector;

(3) calculating and designing the height, duty ratio and period of a grating layer, the thickness of an enhanced transition layer, the width and thickness of a ridge structure and a thin film structure layer under the crystalline state and the amorphous state of the phase-change material according to the required central wavelength and bandwidth of the spectrum selector;

(4) evaporating a corresponding film layer on the substrate according to the material and thickness parameters of each waveguide layer obtained in the steps (2) and (3);

(5) and etching the ridge waveguide thin film layer and the enhancement layer according to the set film layer width and the duty ratio and thickness of the grating layer, and preparing the phase-change material grating strip.

Further, the method adopted in the step (5) may be ultraviolet lithography, nanoimprint lithography, inductively coupled plasma etching, focused ion beam etching, electron beam exposure, or the like.

The invention has the beneficial effects that: the invention relates to a switch type optical waveguide device based on a phase-change material, which adopts a novel optical phase-change material to manufacture a grating structure and utilizes two states of the phase-change material: crystalline and amorphous. When the phase-change material is in a crystalline state, the refractive index is large, the extinction coefficient is large, when the phase-change material is in an amorphous state, the refractive index is small, the extinction coefficient is small, the difference between the phase change of the material before and after phase change is large, and the amorphous state and the crystalline state are transformed to have non-volatility.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic diagram of a phase change material-based switch-mode optical spectrum selector according to the present invention.

Fig. 2 is a side view in plane of YOZ of the structure of the present invention.

FIG. 3 is a graph showing the transmittance of the grating layer in the amorphous phase of the phase-change material as a function of wavelength.

FIG. 4 is a graphical representation of the extinction ratio of the present invention as a function of wavelength of light.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.

It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.

Also, in the description of the present invention, the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

Referring to fig. 1 to 4, an embodiment of the present invention includes: the utility model provides an optical waveguide device of switch mode based on phase change material, includes grating structure, optical film enhancement layer, spine structure, film structure and substrate structure, the structural film structure that is provided with of substrate, the middle part is provided with spine structure above the film structure, spine structure is provided with the optical film enhancement layer, be provided with the grating structure on the optical film enhancement layer, an terminal surface of optical waveguide device is incident by the mode wave, behind the waveguide, at another terminal surface outgoing wave of optical waveguide device.

Further, the optical film enhancement layer forms a grating structure transition enhancement layer.

Furthermore, the optical film enhancement layer is an optical coating material such as MgF2, Al2O3, ZnO and the like.

Further, the ridge structure is made of silicon material, and the width of the ridge structure is the same as that of the grating structure.

Furthermore, the thin film structure material is a permeable material such as silicon.

Further, the substrate material may be a silicon dioxide material.

Furthermore, the incident wavelength of the mode wave is 0.8-1.68 μm.

A manufacturing method of a switch type optical waveguide device based on a phase change material comprises the following steps:

(1) determining a spectrally selected wavelength for time division multiplexing;

(2) selecting a medium and a phase change material for a waveguide layer structure of the spectral selector;

(3) calculating and designing the height, duty ratio and period of a grating layer, the thickness of an enhanced transition layer, the width and thickness of a ridge structure and a thin film structure layer under the crystalline state and the amorphous state of the phase-change material according to the required central wavelength and bandwidth of the spectrum selector;

(4) evaporating a corresponding film layer on the substrate according to the material and thickness parameters of each waveguide layer obtained in the steps (2) and (3);

(5) and etching the ridge waveguide thin film layer and the enhancement layer according to the set film layer width and the duty ratio and thickness of the grating layer, and preparing the phase-change material grating strip.

Further, the method adopted in the step (5) may be ultraviolet lithography, nanoimprint lithography, inductively coupled plasma etching, focused ion beam etching, electron beam exposure, or the like.

The invention has the beneficial effects that: the invention relates to a switch type optical waveguide device based on a phase-change material, which adopts a novel optical phase-change material to manufacture a grating structure and utilizes two states of the phase-change material: crystalline and amorphous. When the phase-change material is in a crystalline state, the refractive index is large, the extinction coefficient is large, when the phase-change material is in an amorphous state, the refractive index is small, the extinction coefficient is small, the difference between the phase change of the material before and after phase change is large, and the amorphous state and the crystalline state are transformed to have non-volatility.

Referring to FIG. 3, the transmittance of incident light (wavelength 0.8-1.68 μm) in the amorphous phase of the grating phase-change material is shown. As can be seen from curve 2, in the selection of the parameters of the grating structure: the grating period is 0.332 microns, the duty cycle is 0.618, the grating thickness is 0.09 microns, and the width is 0.5 microns; the number of gratings is 10 in total in the light transmission direction. At this time, when the grating optical phase change material is in an amorphous state, the incident light transmittance gradually increases as a whole, and minimum values appear at individual wavelengths (850nm, 940nm, and 1440 nm). The grating structure is finely adjusted, and the extreme point on the grating structure is moved leftwards (short wave direction) and rightwards (long wave direction) by comparing the curve 1 with the curve 3, so that the function of regulating and selecting corresponding wavelengths is realized. The period, duty cycle, grating thickness and width corresponding to curve 1 are respectively: 0.300 microns, 0.618, 0.09 microns, 0.5 microns; the parameters corresponding to curve 3 are: 0.332 microns, 0.618, 0.09 microns, 0.8 microns. The selection of any position of the experimental spectrum can be realized by changing the period, duty ratio, thickness and width of the grating; and the phase change state of the phase change material grating is changed to realize the time division multiplexing of wavelength division multiplexing.

Referring to fig. 4, when the grating material is amorphous, the extinction ratio of the optical waveguide device is calculated, taking the range of the optical communication C band + L band (1530-1565 nm) as an example, and the graph shows that the extinction ratio is at a relatively high level and has a maximum value of 23.36dB at 1550 nm. The extinction ratio in the L-band (165-1625 nm) is reduced, but the total is higher than 17 dB.

Furthermore, it should be noted that in the present specification, "include" or any other variation thereof is intended to cover a non-exclusive inclusion, so that a process, a method, an article or an apparatus including a series of elements includes not only those elements but also other elements not explicitly listed, or further includes elements inherent to such process, method, article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should take the description as a whole, and the technical solutions in the embodiments may be appropriately combined to form other embodiments understood by those skilled in the art.