阅读说明：本技术 溅射装置、沉积设备以及操作溅射装置的方法 (Sputtering device, deposition apparatus and method of operating a sputtering device ) 是由 托马斯·沃纳·兹巴于尔 托拜西·伯格曼 丹尼尔·谢弗-科皮托 丹尼尔·塞韦林 于 2018-08-08 设计创作，主要内容包括：描述了一种溅射装置。所述溅射装置包括：阴极布置,所述阴极布置为悬臂式的并且包括靶管,所述阴极布置沿轴向方向延伸并且具有第一侧和第二侧,所述第一侧为被支撑侧,所述第二侧为非被支撑侧；以及暗空间屏蔽件,所述暗空间屏蔽件设置在所述第二侧处并且至少部分地覆盖所述阴极布置,所述暗空间屏蔽件提供重叠区域,在所述重叠区域处所述暗空间屏蔽件与所述靶管沿着所述轴向方向重叠。(A sputtering apparatus is described. The sputtering apparatus includes: a cathode arrangement cantilevered and comprising a target tube, the cathode arrangement extending in an axial direction and having a first side and a second side, the first side being a supported side and the second side being a non-supported side; and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region where the dark space shield overlaps the target tube along the axial direction.)

1. A sputtering apparatus, comprising:

a cathode arrangement cantilevered and comprising a target tube, the cathode arrangement extending along an axial direction and having a first side and a second side, the first side being a supported side and the second side being a non-supported side; and

a dark space shield disposed at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region where the dark space shield overlaps the target tube along the axial direction.

2. The sputtering apparatus of claim 1, wherein said cathode is arranged vertically, or wherein said first side is below said second side.

3. The sputtering apparatus according to any one of claims 1 to 2, wherein said dark space shield is arranged to be electrically floating with respect to said cathode.

4. The sputtering apparatus of any one of claims 1 to 3, wherein an outer surface of the dark space shield is structured to increase material adhesion.

5. The sputtering apparatus according to any one of claims 1 to 4, wherein the dark space shield comprises:

a first annular portion and a second annular portion surrounding the first annular portion, the first and second annular portions being electrically floating relative to each other.

6. The sputtering apparatus of claim 5, wherein said first annular portion and said second annular portion are movable relative to each other along said axial direction to adjust a length of said overlap region.

7. The sputtering apparatus of claim 6, wherein said first annular portion and said second annular portion are movable by one or more insulating spacers.

8. Sputtering apparatus according to any one of claims 1 to 7, said cathode arrangement further comprising:

a magnet assembly within the target tube for confining a plasma during sputtering.

9. A deposition apparatus, comprising:

a vacuum chamber; and

a support disposed at least partially in the vacuum chamber and configured to support the sputtering apparatus of any one of claims 1 to 8 at a first side.

10. The deposition apparatus of claim 9, the support comprising:

a cathode drive unit for rotating the target tube.

11. A method of operating a sputtering apparatus, the method comprising:

the overlap area of the dark space shield overlapping the target tube is adjusted along the axial direction of the cathode arrangement comprising the target tube.

12. The method of operating a sputtering apparatus according to claim 11, wherein the overlap region is adjusted relative to a magnet assembly within the target tube, the magnet assembly being used to confine plasma during sputtering.

13. The method of operating a sputtering apparatus according to any one of claims 11 to 12, the method further comprising

A material is sputtered on the substrate with a sputtering apparatus.

Technical Field

The present disclosure relates to vacuum deposition, and in particular to sputtering. Further, the present disclosure relates to reducing nodule (nodule) formation at sputtering targets, particularly rotating sputtering targets. In particular, the present disclosure relates to a sputtering apparatus, a deposition device (such as a vacuum sputtering device), and a method of operating a sputtering apparatus.

Background

In many applications, it is desirable to deposit a thin layer on a substrate. Known techniques for depositing thin layers are in particular evaporation, chemical vapor deposition and sputter deposition. For example, sputtering may be used to deposit thin layers, such as thin layers of metal (e.g., aluminum or ceramic). During the sputtering process, coating material is transported from a sputtering target consisting of the material to be coated by bombarding the surface of the target with ions of a usually inert process gas at low pressure. Ions are generated by electron bombardment ionization of the process gas and accelerated by a large voltage difference between the target serving as a sputtering cathode and the anode. The bombardment of the target results in the ejection of atoms or molecules of coating material, which accumulate as a deposited film on the substrate arranged opposite the sputtering cathode, for example below the sputtering cathode.

Segmented flat, generally flat, and segmented or generally rotatable targets may be used for sputtering. Due to the geometry and design of the cathode, rotatable targets generally have higher utilization and increased operating time compared to flat targets. Thus, the use of rotatable targets generally increases service life and reduces costs.

The rotating cathode is typically supported by a cathode drive unit of the sputtering installation. During sputtering, the cathode drive unit rotates the rotating cathode. Sputtering is typically performed under low pressure or vacuum conditions, i.e., in a vacuum chamber.

Several components may add particles in the processing region. For example, particles and/or dust from redeposited regions on the edges of the target surface can lead to enhanced nodule formation and spreading. The nodules can enhance particle generation during the sputtering process. Enhanced particle generation can reduce yield and thereby increase product maintenance frequency. This can reduce system productivity due to longer system downtime.

Accordingly, there is a continuing need for improved sputtering apparatus and methods of operating sputtering apparatus.

Disclosure of Invention

In view of the above, a sputtering apparatus, a deposition apparatus (such as a vacuum sputtering apparatus), and a method of operating a sputtering apparatus are provided.

According to one aspect, a sputtering apparatus is provided. The sputtering apparatus includes: a cathode arrangement cantilevered and comprising a target tube, the cathode arrangement extending in an axial direction and having a first side and a second side, the first side being a supported side and the second side being a non-supported side; and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region where the dark space shield overlaps the target tube along the axial direction.

According to another aspect, a deposition apparatus is provided. The deposition apparatus includes a vacuum chamber; and a support disposed at least partially in the vacuum chamber and configured to support a sputtering apparatus according to any of the embodiments described herein. For example, the sputtering apparatus includes: a cathode arrangement cantilevered and comprising a target tube, the cathode arrangement extending in an axial direction and having a first side and a second side, the first side being a supported side and the second side being a non-supported side; and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region where the dark space shield overlaps the target tube along the axial direction.

According to another aspect, a method of operating a sputtering apparatus is provided. The method comprises adjusting an overlap region of a dark space shield overlapping the target tube along an axial direction of a cathode arrangement comprising the target tube.

Other aspects, advantages and features are apparent from the dependent claims, the description and the accompanying drawings.

Drawings

Some of the above-described embodiments will be described in more detail in the following description of the embodiments, with reference to the following drawings, in which:

FIG. 1 schematically shows a cross-sectional side view of an apparatus for supporting a rotatable target of a deposition device for sputtering material on a substrate according to an embodiment of the present disclosure;

fig. 2 shows a schematic cross-sectional side view of a cathode arrangement and a part of a dark space shield (i.e. an overlapping dark space shield) according to an embodiment of the present disclosure;

fig. 3A and 3B show schematic side views of a cathode arrangement and a portion of a dark space shield according to an embodiment of the present disclosure, and illustrate adjustment of an overlap area.

FIG. 4 shows a flow chart illustrating an embodiment of a method of operating a sputtering apparatus according to an embodiment of the present disclosure; and is

Fig. 5 schematically illustrates a deposition apparatus according to embodiments described herein.

Detailed Description

Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in each figure. Each example is provided by way of explanation, not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. The present disclosure is intended to encompass such modifications and variations.

In order to protect parts of the cathode arrangement, for example parts other than the target to be sputtered, from gas discharges and the resulting ion bombardment, dark space shields may be provided to protect such parts. The dark space shield may be mounted concentrically with the cathode, at a fixed distance from the cathode surface. The dark space shield may prevent the process gas discharge from contacting the cathode arrangement. The dark space shield is typically electrically floating. For example, the dark space shield may be mounted to the cathode arrangement using an insulating member.

According to embodiments of the present disclosure, the target edge may be further protected from material redeposition. The dark space shield can overlap the target edge to reduce or avoid redeposition of material at the target edge and subsequent nodule formation and diffusion.

According to some embodiments, a sputtering apparatus is provided. The sputtering apparatus includes: a cathode arrangement cantilevered and comprising a target tube, the cathode arrangement extending in an axial direction and having a first side and a second side, the first side being a supported side and the second side being a non-supported side; and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region, wherein the dark space shield overlaps the target tube along the axial direction.

Fig. 1 shows a sputtering apparatus. The sputtering apparatus comprises a cathode arrangement 100. The cathode arrangement may include a backing tube 102. The backing tube may support the target tube 104. The cathode arrangement has a first side 107, e.g. a supported side. As shown in fig. 1, the cathode arrangement 100 may be supported on the first side 107. Further, the cathode arrangement has a second side 109. The second side is opposite the first side and is a non-supported side. Accordingly, embodiments of the present disclosure relate to cantilevered cathode arrangements.

According to some embodiments, which can be combined with other embodiments described herein, the cathode arrangement can be configured for vertical substrate processing. The first side 107 may be a lower side and the second side 109 may be an upper side. The first and second sides are generally sides opposite to each other along the axial direction of the cathode arrangement 100. The axial direction can also be considered as the length direction, or in view of a rotating cathode, wherein the target tube rotates during sputtering, the axial direction can also be considered as being parallel to the axis of rotation of the target tube.

Fig. 1 shows a dark space shield 200 provided at a second side of the cathode arrangement 100. The dark space shield 200 includes a shield body 210 and an annular portion 212. The annular portion 212 may surround or at least partially surround portions of the cathode arrangement. Parts of the cathode arrangement are covered by dark space shields, for example to protect the parts of the cathode arrangement.

As shown in fig. 1, the dark space shield 200 extends from the second side in the axial direction, e.g. towards the first side 107. The dark space shield, in particular the annular portion 212, extends from the second side towards the first side and/or in the axial direction to provide an overlap region 230. The annular portion 212 covers the target tube 104 in the overlap region.

Fig. 1 also shows a support 110 of the deposition apparatus. The support 110 supports a sputtering apparatus, such as the cathode arrangement 100, at a first side 107 of the cathode arrangement. The support 110 may include a cathode drive unit (not shown) to rotate the target tube. For example, the target tube is rotated or rotated during sputtering to improve uniform material utilization.

Sputtering is the process by which atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The term "coating" and the term "depositing" are used interchangeably herein. The terms "sputtering apparatus" and "deposition apparatus" will refer to an apparatus that uses sputtering to deposit a target, typically a thin film, on a substrate.

Targets include, but are not limited to, pure metals such as aluminum (Al), copper (Cu), molybdenum (Mo), silver (Ag), and gold (Au); metal alloys such as aluminum niobium (AlNb) alloy, aluminum nickel (AlNi) alloy, or titanium tungsten alloy (TiW); semiconductor materials such as silicon (Si); and dielectric materials such as nitrides, carbides, titanates, silicates, aluminates and oxides, e.g. silicon oxide (SiO)_x) And Transparent Conductive Oxides (TCOs) such as impurity-doped ZnO, e.g., ZnO Al, AlZnO, In₂O₃、SnO₂And CdO, and Sn-doped In₂O₃(ITO), Indium Gallium Zinc Oxide (IGZO) and F-doped SnO₂. According to some embodiments, embodiments of the invention may be applied to Si, SiO_x、Ti、TiO_xTiW and ITO are particularly useful.

The term "substrate" as used herein shall refer to both non-flexible substrates (e.g., wafers or glass sheets) and flexible substrates (e.g., webs and foils or thin glass). Representative examples include (but are not limited to) applications involving: semiconductors and dielectric materials and devices; a silicon-based wafer; flat panel displays (such as TFTs) and Touch Screen Panels (TSPs); a mask and a filter; energy conversion and storage devices (such as photovoltaic cells, fuel cells, and batteries); solid state lighting devices (such as LEDs and OLEDs); magnetic and optical storage devices; micro-electro-mechanical systems (MEMS) and nano-electro-mechanical systems (NEMS); micro-optical and opto-electromechanical systems (NEMS), micro-optical and opto-electronic devices; a transparent substrate; architectural and automotive glazing; metallization systems for metal and polymer foils and packaging; and micro-molding and nano-molding.

As used herein, the term "rotatable target" or "target tube" shall refer to any cathode arrangement suitable to be rotatably mounted to a sputtering installation. Generally, a "rotatable target" or "target tube" includes a target structure suitable for being sputtered. As used herein, the term "rotatable target" or "target tube" shall particularly refer to a magnetically enhanced cathode assembly in which a magnet assembly (e.g., an internal magnetic unit, such as a permanent magnet) is disposed to achieve improved sputtering.

The rotatable target, hereinafter also referred to as rotatable sputter cathode or rotatable cathode, can be made of a hollow cylinder of target material, i.e. a target tube. These rotary targets are also referred to as monolithic targets and can be manufactured by casting or sintering these targets from a target material.

Non-monolithic rotatable targets typically comprise a cylindrical rotatable tube, such as a backing tube, having a layer of target material applied to its outer surface. In the manufacture of such rotatable sputter cathodes, the target material may be applied, for example, by powder spraying or casting or isostatic pressing onto the outer surface of the backing tube. Alternatively, a hollow cylinder of target material (which may also be referred to as a target tube) may be arranged on a backing tube and bonded to the backing tube, for example using indium, to form a rotating cathode.

In order to obtain increased deposition rates, it has been proposed to use magnetically enhanced cathodes. This may also be referred to as magnetron sputtering. The magnetic unit (which may include an array of magnets) may be disposed inside the sputtering cathode, for example inside the backing tube or inside the monolithic target, and provide a magnetic field for magnetically enhanced sputtering. The cathode arrangement or the target tube is typically rotatable about a longitudinal axis of the cathode arrangement such that the target tube is rotatable relative to the magnet unit. At one of the sides of the cathode arrangement, e.g. the first side 107 in fig. 1, an annular part adapted for attaching the cathode to the drive unit is mounted to the support. The terms "side", "end" or "edge" as used herein in the context of a rotatable target or cathode shall refer to a side, end or edge in the axial direction of the cathode arrangement or target. Typically, the outer cross-section of the target or cathode arrangement is circular, having a diameter of for example between 8cm and 30cm, whereas the length of the target or cathode arrangement may be in the range of several meters, such as 1m or more, and/or 3m or less, or even up to 4 m.

During operation, the unshielded type of electric cathode assembly may suffer from gas discharge (and arcing) at the cathode arrangement edge due to electric field build-up. In addition, during operation, the area of the unshielded photocathode beyond the target area (e.g., the backing tube) may be exposed to the dark plasma space (also referred to as cathode fall, defining a dark area in the gas discharge volume where ions are accelerated from the plasma to the cathode. This can lead to accidental sputtering of non-deposition materials, resulting in film deposition with contamination of the non-deposition materials. To avoid sputtering in such areas, the geometry of the potential discharge area is limited to be below the characteristic dark space width to prevent electrons from accelerating to energies sufficient for plasma ignition in the limited space. Such confinement can be achieved by electrically floating the shield near the cathode surface that is not intended to be exposed to sputtering. The distance between the cathode and the shield depends on the plasma pressure (paschen curve) and is typically a few millimeters.

To avoid gas discharges and sputtering on the unsupported side (i.e. the upper side) of the cathode arrangement and, in addition, to reduce particle generation by, for example, non-double formation, a dark space shield is provided to shield this region of the target tube, which would otherwise be, for example, directly exposed to sputtering. However, dust accumulation from material redeposition near the normal sputtering area on the target surface (e.g., at the edge of the target end and also at the surface of the target end, commonly referred to as redeposition area) will result in yield loss due to the transfer of ever-increasing particles to the substrate during the film deposition process. Furthermore, when particles from the edge of the target are distributed onto the target surface, the particles can become seeds for nodule growth, causing further arcing and accelerated particle and nodule generation: this will increase the frequency of required maintenance on the deposition system, resulting in a loss of both throughput and productivity. The additional overlap of the dark space shield with the target tube helps to avoid dust accumulation at the target edge and redeposition within the redeposition area of the target edge and thereby reduces particle generation. The shield may comprise or be made of an insulator or metal alloy at a floating potential, e.g. isolated from the cathode potential. During the sputtering process, the target tube shielded by means of the non-rotating dark space shield may be subjected to material deposition on only one side of the dark space shield. The resulting film formed on the dark space shield surface may crack and the thin sheet of material may fall off or may be transported onto the substrate, masking the deposition of sputtered material onto the substrate and causing defects in the product. In addition, the flakes may fall off or may be transported onto the target surface, initiating further nodule growth and nodule-induced particle generation. According to embodiments of the present disclosure, a dark space shield may be provided at the cathode arrangement to rotate with the target tube.

By means of the rotation of the dark space shield together with the target tube, the entire surface of the dark space shield is exposed to the material deposition. The material layer is uniformly deposited over the entire surface of the dark space shield. A longer deposition of material may be provided before the material breaks and falls onto the substrate. Thus, the risk of substrate contamination and maintenance time and costs are reduced compared to non-rotating dark space shields.

Fig. 2 shows a part of a cathode arrangement. The cathode arrangement may include a backing tube 102 and a target tube 104. The dark space shield 200 is mounted at the upper side of the cathode arrangement. According to some embodiments of the present disclosure, which may be combined with other embodiments described herein, the cathode arrangement may be substantially vertical. Vertical or substantially vertical allows a deviation of ± 10 ° from the direction of gravity. A slight inclination to face the substrate surface upwards during processing may result in an improved stability of the substrate in or at the substrate carrier. Tilting slightly to face the substrate down during processing may result in reduced particle adhesion on the substrate.

As shown in fig. 2, the dark space shield 200 includes a shield body 210 and a ring portion 212. The dark space shield 200 may be mounted to the cathode arrangement to electrically float relative to the cathode arrangement. For example, the dark space shield may be mounted with a fixture 242, such as a screw. An insulating member 220 may be provided to electrically insulate the dark space shield 200 from the cathode arrangement.

According to some embodiments, which can be combined with other embodiments described herein, the dark space shield 200, including the shield body 210 and the annular portion 212, can have a cup-like shape. The outer surface 214 of the dark space shield can be structured to increase the material adhesion of the deposited material. Thus, the frequency of servicing to replace the dark space shield before deposited material that has accumulated on the dark space shield can flake off and contaminate the processing region can be reduced. For example, the outer surface 214 may include the cylindrical outer surface of the annular portion 212 and the outer surface of the shield body 210. As shown in fig. 2, the structure provided at the outer surface may comprise a plurality of protrusions and/or depressions, e.g. horizontally oriented rims.

According to still further embodiments, which can be combined with other embodiments described herein, the outer surface and/or structures on the outer surface can have surface roughness or additional surface treatments to maximize adhesion of redeposited material. Therefore, the peeling of the accumulated material can be further reduced. According to some embodiments, which can be combined with other embodiments described herein, the structures on the outer surface can include first structures having a first length dimension (e.g., in the millimeter range). Further, the structures on the outer surface may include second structures having a second length dimension (e.g., surface roughening). The second length scale may be at least five to one fifth of the first length scale. Different length scales may improve adhesion of accumulated material. For example, the length dimension may refer to the distance between two adjacent protrusions or two adjacent recesses. The length scale may be provided specifically for a repeating structural pattern.

Fig. 2 shows a dark space shield 200, in particular an annular portion 212 of the dark space shield having a recess 213. The recess 213 extends along the axial direction of the cathode arrangement and provides an overlap region 230, wherein the dark space shield 200 overlaps the target tube 104. A gap 215 is provided between the target tube 104 and the dark space shield 200. According to some embodiments, which can be combined with other embodiments described herein, the gap is selected to be small enough to ensure that plasma ignition in the confined area is avoided. The gap size may vary depending on the operating pressure and the gas (paschen curve) applied for the sputtering process. The gap may be between 0.5mm and 5 mm. In the absence of plasma in the gap, the part of the cathode arrangement covered by the dark space shield is protected. For example, nodule generation in the overlap region may be reduced or avoided.

Typically, when sputtering material from the target tube, hot ring erosion structures at the target tube may be found at the edge of the target tube (e.g., the second side disposed adjacent the cathode). In view of the upper part of the cathode arrangement, i.e. the second side as described herein, nodule generation may occur between the hot ring erosion structure and the upper end of the cathode arrangement. Particles and/or dust may accumulate at the upper end and may cause additional nodule formation. With embodiments of the present disclosure that include overlapping regions, nodule formation and diffusion may be reduced. Thus, particle generation and down time of the system may be reduced.

According to some embodiments, which may be combined with other embodiments described herein and as exemplarily shown in fig. 2, a spacer 222 may be provided between the cathode arrangement and the dark space shield 200. The spacers may be beneficial to provide a more stable gap width. Control of the gap width may improve the turn-off of the plasma in the gap region.

Fig. 2 shows a spacer 222. For electrically floating dark space shields, the spacers are typically made of or include an insulating material. Further, two or more spacers may be provided. For example, three spacers may be provided at an angular coordinate of the cathode assembly at a distance of 120 °.

Fig. 3A and 3B illustrate yet another embodiment of a dark space shield and sputtering apparatus according to embodiments of the present disclosure. The dark space shield is altered and/or adjusted to cover the overlapping area of the target tube. Fig. 3B has a smaller overlap area than fig. 3A. The cathode arrangement may include a backing tube 102 and a target tube 104. The dark space shield includes two or more components. For example, as shown in fig. 3A and 3B, two components may be provided. A first of the two parts may have a cup-like shape and a second of the two parts may have a cup-like shape. The first component may be an external component and may, for example, correspond to the dark space shield described with respect to fig. 2. The first component may include a first shield body 210 and a first annular portion 212. The second component may include a second shield body 310 and a second annular portion 312.

According to some embodiments, which can be combined with other embodiments described herein, the dark space shield can comprise a first annular portion and a second annular portion surrounding the first annular portion. The first annular portion and the second annular portion may be electrically floating with respect to each other. For example, an insulating spacer 320 may be disposed between the first member and the second member. According to some embodiments, which can be combined with other embodiments described herein, the size of the overlap region can be adjusted by the length of the insulating spacer along the axial direction of the cathode arrangement.

According to yet another optional modification, one or more spacers 322 may be provided between the first part of the dark space shield and the second part of the dark space shield. For electrically floating dark space shields, the spacers 322 are typically made of or include an insulating material. Further, two or more spacers may be provided. For example, three spacers may be provided at an angular coordinate of the cathode assembly at a distance of 120 °.

The first annular section 212 and the second annular section 312 may be moved relative to each other in the axial direction by removing the insulating spacers 320, replacing the insulating spacers 320 with spacers of different sizes, or adjusting the size of the insulating spacers. The length of the overlap region can be adjusted. For example, according to some embodiments, which can be combined with other embodiments described herein, the insulating spacer 320 and/or the spacers 222 and 232, respectively, can comprise or consist of a ceramic material. For example, AlO may be used_xAIN, etc. According to embodiments, which can be combined with other embodiments disclosed herein, the dark space shield is electrically isolated from the target by means of spacers mounted on the ring shaped portion. The insulating spacer 320 and/or the spacers 222 and 232 may be insulating units, the purpose of which is to electrically isolate the cathode arrangement from the dark space shield. The insulating unit may comprise or consist of an insulating material; suitable insulating materials may be any ceramic or heat resistant plastic, such asPEEK, and the like.

According to some embodiments, which can be combined with other embodiments described herein, the dark space shield can comprise a first part and a second part. Two concentric parts may be provided. A reduction of the overlap area may be provided, for example, by adding an insulating spacer material and adapting. Such an adaptation is beneficial for adjusting the deposition uniformity of the sputtering apparatus and/or improving the reduction of particle generation. For example, the position of the magnet assembly within a sputtering apparatus can vary from one sputtering apparatus to another. The position of the magnet assembly affects the position of the confined plasma. Thus, an adaptation of the overlap area may be provided to compensate for position variations of the magnet assembly in the sputtering apparatus. Additionally or alternatively, adaptation may be provided for different types of target tubes (e.g. dog-bone targets).

The inventors of the present application may show that overlapping dark space shields may meet compliance with the uniformity requirements for material deposition on large area substrates. Compliance with uniformity requirements can be achieved even more easily using adjustable overlapping dark space shields, where the size of the overlapping area where the dark space shields cover the target tube can be adapted. This can be shown, for example, for performing titanium nitride deposition and evaluating sheet resistance non-uniformity and the adherence of overlapping dark space shields to high pressure deposition conditions. It can also be shown that the overlapping dark space shields comply with typical arc discharge requirements and that the difference in arc discharge characteristics of the overlapping dark space shields is below the statistically relevant area when compared to the non-overlapping dark space shields.

Fig. 4 shows a flow chart illustrating a method of operating a sputtering apparatus. As described above, according to some embodiments, the overlap region of the dark space shield that overlaps the target tube along the axial direction of the cathode arrangement including the target tube may be adjusted, as shown in block 402. According to some optional modifications, the overlap region may be adjusted relative to the magnet assembly within the target tube, as shown in block 404. The magnet assembly confines the plasma during sputtering. Sputtering may be provided by having an overlapping area of a predetermined size (see block 406). Particle generation can be reduced while at the same time sufficient layer uniformity in terms of the size of the substrate, in particular a large area substrate, can be provided.

Embodiments of the present disclosure may be particularly useful for material deposition on large area substrates, for example, for display fabrication. In the present disclosure, a "sputtering apparatus" or "material deposition apparatus" may be configured for material deposition on a substrate, particularly on a large area substrate, as described herein. For example, a "large area substrate" may have an area of 0.5m²Or more, in particular 1m²Or a larger major surface. In some embodiments, the large area substrate may be GEN 4.5, which corresponds to about0.67m²The substrate (0.73 × 0.92 m); GEN 5, which corresponds to about 1.4m²The substrate (1.1m × 1.3 m); GEN 7.5, which corresponds to about 4.29m²The substrate (1.95m × 2.2 m); GEN 8.5, which corresponds to about 5.7m²A substrate (2.2m × 2.5 m); or even GEN 10, which corresponds to about 8.7m²The substrate (2.85 m.times.3.05 m). Even larger generations, such as GEN 11 and GEN 12, and corresponding substrate areas may be similarly implemented.

Fig. 5 shows a schematic view of a deposition apparatus 500 having a sputtering device disposed in a vacuum chamber 510. During substrate processing within the vacuum chamber, material is deposited on the substrate 520 by a sputtering apparatus. The cathode arrangement 100 may comprise a magnet assembly 550 disposed in the target tube of the cathode arrangement 100. The sputtering apparatus can be any sputtering apparatus according to embodiments described herein, and can include various details, features, modifications, and aspects described in the present disclosure. The support 110 is at least partially disposed within the vacuum chamber 510. The support 110 supports the sputtering apparatus at a lower side (i.e., a first side as described herein) of the sputtering apparatus. The support 110 may include a cathode drive unit for rotating the target tube during sputter deposition.

The embodiment shown in fig. 5 shows a so-called "drop-in drive", in which the support for the cathode arrangement is set or reaches into the vacuum chamber from the side. The support may be mounted to a wall of the vacuum chamber. The cathode arrangement is supported at a lower side of the cathode arrangement in a cantilever manner.

This written description uses examples to disclose the invention, including the best mode, and also to enable any person skilled in the art to practice the described subject matter, including making and using any devices or systems and performing any incorporated methods. While various specific embodiments have been disclosed in the foregoing, those skilled in the art will recognize that the spirit and scope of the claims allows for equally effective modifications. In particular, mutually non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and may include such modifications and other examples as would occur to one skilled in the art. Such other examples are intended to be within the scope of the claims if the claims have structural elements that do not differ from the literal language of the claims, or if the claims include equivalent structural elements with insubstantial differences from the literal languages of the claims.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.