阅读说明：本技术 低voc的半导体芯片清洗剂及其制备方法 (Low-VOC semiconductor chip cleaning agent and preparation method thereof ) 是由 陈成勋 种光耀 黄继承 于 2020-12-22 设计创作，主要内容包括：本发明揭示了一种低VOC的半导体芯片清洗剂及其制备方法,所述清洗剂的pH值为7.2-8.5,所述清洗剂的VOC≤100g/L,其组成和重量份数为,醇醚溶剂3-80份,N-羟乙基-2-吡咯烷酮2-10份,非离子表面活性剂0.6-5份,缓蚀剂0.1-0.8份,去离子水30-100份。本发明的有益效果为：能够有效去除多种半导体电子器件上的焊锡膏、助焊剂、锡膏残留,对于倒装芯片、PCBA也有显著的清洗效果。适用于超声波清洗和喷淋清洗及浸泡清洗等多种清洗工艺,超声波适用精细的物件清洗,能得到非常理想的效果；喷淋清洗工艺则适用于大批量清洗PCBA。清洗后的表面离子残留物少、可靠性高,不含固体物质,被清洗件和清洗设备上无残留,无发白现象。(The invention discloses a low-VOC semiconductor chip cleaning agent and a preparation method thereof, wherein the pH value of the cleaning agent is 7.2-8.5, the VOC of the cleaning agent is less than or equal to 100g/L, and the cleaning agent comprises, by weight, 3-80 parts of an alcohol ether solvent, 2-10 parts of N-hydroxyethyl-2-pyrrolidone, 0.6-5 parts of a nonionic surfactant, 0.1-0.8 part of a corrosion inhibitor and 30-100 parts of deionized water. The invention has the beneficial effects that: the cleaning agent can effectively remove solder paste, soldering flux and solder paste residues on various semiconductor electronic devices, and has a remarkable cleaning effect on flip chips and PCBAs. The ultrasonic cleaning device is suitable for various cleaning processes such as ultrasonic cleaning, spray cleaning, soaking cleaning and the like, and the ultrasonic cleaning device is suitable for cleaning fine objects and can obtain very ideal effects; the spray cleaning process is suitable for cleaning PCBA in large batch. The cleaned surface has less ionic residues, high reliability, no solid matter, no residue on the cleaned part and the cleaning equipment and no whitening phenomenon.)

1. Low VOC's semiconductor chip cleaner, its characterized in that: the pH value of the cleaning agent is 7.2-8.5, the VOC of the cleaning agent is less than or equal to 100g/L, and the composition and the weight portion are as follows,

2. the low VOC semiconductor chip cleaner of claim 1 wherein: the cleaning agent comprises the following components in parts by weight,

3. the low VOC semiconductor chip cleaner of claim 2 wherein: the alcohol ether solvent is one or more of propylene glycol monomethyl ether, propylene glycol butyl ether and tripropylene glycol monobutyl ether.

4. The low VOC semiconductor chip cleaner of claim 2 wherein: the alcohol ether solvent is a mixed solvent of 0-5 parts by weight of propylene glycol monomethyl ether, 1-5 parts by weight of propylene glycol butyl ether and 0-3 parts by weight of tripropylene glycol monobutyl ether.

5. The low VOC semiconductor chip cleaner of claim 2 wherein: the corrosion inhibitor is one or more of acetone oxime, polyaspartic acid, EDTA, benzotriazole and sodium citrate.

6. The low VOC semiconductor chip cleaner of claim 5 wherein: the corrosion inhibitor is a mixture of acetone oxime and polyaspartic acid, and the weight part ratio of the acetone oxime to the polyaspartic acid is 0.2-0.8.

7. The low VOC semiconductor chip cleaner of claim 2 wherein: the nonionic surfactant is one or a combination of more than one of isomeric tridecanol polyoxyethylene ether, and the molecular formula of the isomeric tridecanol polyoxyethylene ether is C₁₃H₂₇O(CH₂CH₂O) nH, wherein n is 5-10.

8. The method for preparing a low VOC semiconductor chip cleaner as claimed in any one of claims 1 to 7, wherein: the cleaning agent comprises the following steps of adding deionized water and a nonionic surfactant into a reaction kettle, uniformly stirring at the rotating speed of 700 r/m-1000 r/m, then adding an alcohol ether solvent and N-hydroxyethyl-2-pyrrolidone, slowly adding a corrosion inhibitor after the mixed solution is stirred to be a clear and uniform solution, and stirring to be a clear and stable solution to obtain the required cleaning agent.

Technical Field

The invention relates to a cleaning agent, in particular to a low-VOC semiconductor chip cleaning agent and a preparation method thereof.

Background

With the rapid development of the electronic information industry, electronic products have been developed to be miniaturized, intelligent, multifunctional, and highly integrated. Under the conditions that the size of an integrated circuit chip is gradually reduced and the integration level is continuously improved, the electronic industry puts higher and higher requirements on the integrated circuit packaging technology, and the quality of a bonding area of a semiconductor chip directly influences the reliability of an integrated circuit device. A semiconductor chip is a semiconductor device that can perform a certain function by performing etching-wiring on a semiconductor wafer. In the manufacturing process, a layer of aluminum is needed to be electroplated on the surface of a semiconductor chip as an active area metal layer to participate in electrochemical reaction, and tin-lead solder is usually adopted for welding in the step of bonding the semiconductor chip and a frame, so that a large amount of soldering flux pollutants are remained on the surface and the periphery of the chip after vacuum reflow soldering; the residual soldering flux can cause the color change of the aluminum layer on the surface of the chip, the surface tension is reduced, if the chip is not cleaned, the bonding failure of the subsequent gold wire and the aluminum layer is directly influenced, and the reliability of the subsequent packaging process is reduced.

Therefore, the semiconductor chip cleaning agent comes from the beginning, solvent type cleaning agents are generally adopted for cleaning the semiconductor chip in the prior art, and the patent application CN107611008A discloses that bromopropane is used for removing the residual soldering flux on the surface of the chip by adopting a gas phase cleaning technology; however, bromopropane is a halogen-containing alkane reagent that poses a potential carcinogenic risk to operators on prolonged contact, and has an ODP value of 0.02, which is damaging to the ozone layer. Chinese patent CN201510593289.7 discloses a semiconductor surface cleaning agent. The semiconductor surface cleaning agent contains fluorine substituted compounds, does not contain chlorofluorocarbon compounds which destroy the environment, has good dissolving and cleaning performance to the semiconductor surface soldering flux, but contains pungent solvents, and easily causes adverse reactions of dizziness, eye irritation and the like caused by cleaning of users. That is, the existing cleaning agent products are designed according to the product functions, and the environmental protection factors are rarely considered. However, with the release of national standards of GB38508-2020 'cleaning agent volatile organic compound restriction', the low VOC cleaning agent will become the mainstream development direction.

Disclosure of Invention

In view of the above-mentioned defects of the prior art, the present invention aims to provide a low-VOC semiconductor chip cleaning agent and a preparation method thereof.

The purpose of the invention is realized by the following technical scheme:

the low-VOC semiconductor chip cleaning agent has a pH value of 7.2-8.5, a VOC of less than or equal to 100g/L and comprises the following components in parts by weight,

preferably, the cleaning agent comprises the following components in parts by weight,

preferably, the alcohol ether solvent is one or more of propylene glycol monomethyl ether, propylene glycol butyl ether and tripropylene glycol monobutyl ether.

Preferably, the alcohol ether solvent is a mixed solvent of 0-5 parts by weight of propylene glycol monomethyl ether, 1-5 parts by weight of propylene glycol butyl ether and 0-3 parts by weight of tripropylene glycol monobutyl ether.

Preferably, the corrosion inhibitor is one or more of acetoxime, polyaspartic acid, EDTA, benzotriazole and sodium citrate.

Preferably, the corrosion inhibitor is a mixture of acetoxime and polyaspartic acid, and the weight part ratio of the acetoxime to the polyaspartic acid is 0.2-0.8.

Preferably, the nonionic surfactant is one or a combination of more than one of isomeric tridecanol polyoxyethylene ether, and the molecular formula of the isomeric tridecanol polyoxyethylene ether is C₁₃H₂₇O(CH₂CH₂O) nH, wherein n is 5-10.

Preferably, the preparation method of the low-VOC semiconductor chip cleaning agent comprises the following steps of adding deionized water and a nonionic surfactant into a reaction kettle, uniformly stirring at the rotating speed of 700 r/m-1000 r/m, then adding an alcohol ether solvent and N-hydroxyethyl-2-pyrrolidone, slowly adding a corrosion inhibitor after the mixed solution is stirred to be a clarified uniform solution, and stirring to be a clarified stable solution to obtain the required cleaning agent.

The invention has the beneficial effects that: the cleaning agent can effectively remove solder paste, soldering flux and solder paste residues on various semiconductor electronic devices, and has a remarkable cleaning effect on flip chips and PCBAs. The ultrasonic cleaning device is suitable for various cleaning processes such as ultrasonic cleaning, spray cleaning, soaking cleaning and the like, and the ultrasonic cleaning device is suitable for cleaning fine objects and can obtain very ideal effects; the spray cleaning process is suitable for cleaning PCBA in large batch. The cleaned surface has less ionic residues, high reliability, no solid matter, no residue on the cleaned part and the cleaning equipment and no whitening phenomenon.

Detailed Description

The following detailed description of the embodiments of the present invention is provided in connection with the examples to facilitate understanding and understanding of the technical solutions of the present invention.

Example 1

A low VOC semiconductor chip cleaning agent comprises the following components:

the preparation method comprises the following steps:

adding deionized water and a nonionic surfactant into a reaction kettle, uniformly stirring at the rotating speed of 700 r/m-1000 r/m, then adding an alcohol ether solvent and N-hydroxyethyl-2-pyrrolidone, slowly adding a corrosion inhibitor after the mixed solution is stirred to be a clear and uniform solution, and stirring to be a clear and stable solution to obtain the required cleaning agent.

Example 2

A low VOC semiconductor chip cleaning agent comprises the following components:

the preparation is as in example 1.

Example 3

A low VOC semiconductor chip cleaning agent comprises the following components:

deionized water	75.7 parts by weight
		C13H27O(CH2CH2O)7H	2 parts by weight of
Acetone oxime	0.3 part by weight
		N-hydroxyethyl-2-pyrrolidone	4 parts by weight of
Propylene glycol butyl ether	8 parts by weight

The preparation is as in example 1.

Example 4

A low VOC semiconductor chip cleaning agent comprises the following components:

deionized water	80 parts by weight
		C13H27O(CH2CH2O)8H	0.9 part by weight
Acetone oxime	0.3 part by weight
		N-hydroxyethyl-2-pyrrolidone	4 parts by weight of
Tripropylene glycol monobutyl ether	7.5 parts by weight

The preparation is as in example 1.

The cleaning agents of examples 1 to 4 of the present invention were subjected to ultrasonic cleaning of a semiconductor and effect observation by a microscope, and the test results are shown in table 1.

Table 1: cleaning effect test table for each embodiment

In conclusion, the composition proportion of the invention ensures the cleanness of rinsing and does not influence the volatilization capability of the product on the premise of reducing the surface tension. Specifically, because the boiling point of the alcohol ether solvent in the cleaning agent is high, the addition amount determines the volatilization speed after cleaning, if the content is too high, the speed of the subsequent process after cleaning the product can be influenced in practical application, and if the content is too low, the product cannot be well dissolved. The content of the deionized water and the alcohol ether can effectively reduce the cost, the cleaning force is easy to be insufficient if the content is too much, and the cost can be effectively controlled under the condition of ensuring the cleaning force. The nonionic surfactant can effectively reduce the surface tension of a product and improve the cleaning capability, but too much surfactant addition easily causes the foam height of the cleaning agent to exceed the standard, and can cause the incomplete subsequent rinsing to form surface residues, thereby having great influence on the cleaned semiconductor workpiece.

The invention has various embodiments, and all technical solutions formed by adopting equivalent transformation or equivalent transformation are within the protection scope of the invention.