阅读说明：本技术 一种可用于光电子器件散热的高耐热结构及其制备方法 (High heat-resistant structure for heat dissipation of photoelectronic device and preparation method thereof ) 是由 周殿力 杨根杰 吴梦鸽 于军胜 于 2020-12-14 设计创作，主要内容包括：本发明公开了一种可用于光电子器件散热的高耐热结构及其制备方法,属于耐热材料领域,高耐热结构,其特征在于,从下到上依次为附着面和薄膜结构,所述薄膜结构从下到上依次为吸热剂、中间连接剂、耐热剂和保护剂；所述薄膜结构以质量成分计,分别为,吸热剂35～45％、中间连接剂10～20％、耐热剂30～50％、保护剂5％；其制备方法是先对散热器或基底表面进行清洗,然后依次喷涂吸热剂,中间连接剂,烘干后再依次喷涂耐热剂和保护剂,最后烘干即可,通过本发明可以解决高温环境下工作的设备,由于外界温度本身高于设备温度,普通散热的方法对此类设备并不管用的问题。(The invention discloses a high heat-resistant structure capable of being used for heat dissipation of an optoelectronic device and a preparation method thereof, belonging to the field of heat-resistant materials, and the high heat-resistant structure is characterized in that an attachment surface and a film structure are sequentially arranged from bottom to top, and the film structure is sequentially provided with a heat absorbing agent, an intermediate connecting agent, a heat-resistant agent and a protective agent from bottom to top; the film structure comprises, by mass, 35-45% of a heat absorbing agent, 10-20% of an intermediate connecting agent, 30-50% of a heat resisting agent and 5% of a protective agent; the preparation method comprises the steps of cleaning the surface of a radiator or a substrate, spraying a heat absorbent, an intermediate connecting agent, drying, spraying a heat-resistant agent and a protective agent in sequence, and drying.)

1. A high heat-resistant structure for heat dissipation of an optoelectronic device is characterized in that an attachment surface and a film structure are sequentially arranged from bottom to top, and the attachment surface is a substrate or the surface of a radiator; the substrate is a rigid substrate or a flexible substrate;

the total thickness of the thin film structure is not more than 25 um;

the film structure sequentially comprises a heat absorbing agent, an intermediate connecting agent, a heat resisting agent and a protective agent from bottom to top;

the film structure comprises, by mass, 35-45% of a heat absorbing agent, 10-20% of an intermediate connecting agent, 30-50% of a heat resisting agent and 5% of a protective agent.

2. A high thermal resistance structure for dissipating heat of an optoelectronic device as claimed in claim 1, wherein the rigid substrate is glass or sapphire.

3. A high thermal resistance structure for dissipating heat of an optoelectronic device as claimed in claim 1, wherein the flexible substrate is one of metal foil, polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride acetate or polyacrylic film.

4. The high heat-resistant structure for heat dissipation of optoelectronic devices as claimed in claim 1, wherein the heat absorbing agent is one or more of metal nanospheres or oxide nanospheres with three-dimensional structure and good thermal conductivity and heat absorption.

5. The structure of claim 4, wherein the heat absorbing agent is silver nanospheres.

6. The structure of claim 1, wherein the intermediate bonding agent is a water-dispersed solution of boron nitride prepared by one of roll coating, LB film method, knife coating, spin coating, drop coating, spray coating, Czochralski method, casting, dip coating, ink-jet printing, self-assembly, and screen printing.

7. A high heat-resistant structure for dissipating heat of an optoelectronic device according to claim 1, wherein the heat-resistant agent is one or more of metal alloy nanowires or metal nanowires.

8. The structure of claim 7, wherein the heat-resistant agent is selected from the group consisting of Cu-Fe alloy nanowires, Ag-Fe alloy nanowires, Au-Fe alloy nanowires, Al-Fe alloy nanowires, Ni-Fe alloy nanowires, Co-Fe alloy nanowires, Mn-Fe alloy nanowires, Cd-Fe alloy nanowires, in-Fe alloy nanowires, Sn-Fe alloy nanowires, W-Fe alloy nanowires, Pt-Fe alloy nanowires, Ag-Cu alloy nanowires, Au-Cu alloy nanowires, Al-Cu alloy nanowires, Ni-Cu alloy nanowires, Co-Cu alloy nanowires, Mn-Cu alloy nanowires, Cd-Cu alloy nanowires, Sn-Cu alloy nanowires, W-Cu alloy nanowires, Pt-Cu alloy nanowires, Au-Ag alloy nanowires, Al-Ag alloy nanowires, Ni-Ag alloy nanowires, Co-Ag alloy nanowires, Mn-Ag alloy nanowires, Cu-Cu alloy nanowires, Cu-Fe alloy nanowires, Cu alloy nanowires, Cadmium-silver alloy nanowire, indium-silver alloy nanowire, tin-silver alloy nanowire, tungsten-silver alloy nanowire, platinum-silver alloy nanowire, aluminum-gold alloy nanowire, nickel-gold alloy nanowire, cobalt-gold alloy nanowire, manganese-gold alloy nanowire, cadmium-gold alloy nanowire, indium-gold alloy nanowire, tin-gold alloy nanowire, tungsten-gold alloy nanowire, cobalt-nickel alloy nanowire, manganese-nickel alloy nanowire, cadmium-nickel alloy nanowire, indium-nickel alloy nanowire, tin-nickel alloy nanowire, tungsten-nickel alloy nanowire, platinum-nickel alloy nanowire, cadmium-manganese alloy nanowire, indium-manganese alloy nanowire, tin-manganese alloy nanowire, tungsten-manganese alloy nanowire, platinum-manganese alloy nanowire, indium-cadmium alloy nanowire, tin-cadmium alloy nanowire, platinum-cadmium alloy nanowire, tin-indium alloy nanowire, platinum-indium alloy nanowire, tungsten-tin alloy nanowire, One or more of platinum-tin alloy nanowires and platinum-tungsten alloy nanowires.

9. The high heat-resistant structure for heat dissipation of optoelectronic devices as claimed in claim 1, wherein said protective agent is an extract of the trunk of Pinus sylvestris containing polyether-modified polysiloxane in an amount of 10% by volume.

10. A preparation method of a high heat-resistant structure for heat dissipation of an optoelectronic device is characterized by comprising the following steps:

step S1: firstly, cleaning the surface of a radiator or the surface of a substrate, comprising the following steps:

step S1-1: respectively carrying out ultrasonic cleaning on the surface of the radiator or the surface of the substrate by using a detergent, acetone, deionized water and isopropanol;

step S1-2: drying the cleaned surface of the radiator or the surface of the substrate by using dry nitrogen;

step S1-3: then bombarding the surface of the radiator or the surface of the substrate by oxygen ions;

step S2: spraying the heat absorbing agent with the concentration of 0.02mg/ml on the surface of the radiator or the surface of the substrate processed in the step S1 by adopting a spraying method, wherein the spraying speed is 70-520 mu L/min;

step S3: spraying the intermediate connecting agent with the concentration of 1mg/ml on the surface of the radiator or the surface of the substrate treated in the step S2 by adopting a spraying method, wherein the spraying speed is 30-90 mu L/min;

step S4: drying the surface of the radiator or the surface of the substrate obtained in the step S3 at 80 ℃ for 5 min;

step S5: spraying heat-resistant agent with the concentration of 0.5% on the surface of the radiator or the surface of the substrate obtained in the step S4 by adopting a spraying method, wherein the spraying speed is 100-;

step S6: spraying a protective agent, namely a dried sea pine trunk extracting solution containing 10% of polyether modified polysiloxane by volume fraction, on the surface of the radiator or the surface of the substrate obtained in the step S5 by adopting a spraying method, wherein the spraying speed is 100 mu L/min;

step S7: drying the surface of the radiator or the surface of the substrate obtained in the step S6 at 50 ℃ for 3min to obtain a heat-resistant structure;

step S8: the heat-resistant structure obtained in step S7 was subjected to a heat resistance test.

Technical Field

The invention belongs to the field of heat-resistant materials, and particularly relates to a high heat-resistant structure for heat dissipation of an optoelectronic device and a preparation method thereof.

Background

Along with the trend that electronic products are developed towards thinness, lightness and smallness to adapt to the trend of the modern society that the requirements of light weight, convenient carrying and flexible transparency and higher integration degree are increased, the surface temperature of the electronic products is continuously increased, the service life of electronic elements is suddenly reduced under the condition that the placed environment is also more and more severe, and the problems of poor heat resistance and poor adaptability to high-temperature working environment of the electronic products are more and more severe; the performance of electronic components is reduced due to the overhigh temperature, and the aging of optical components in electronic devices is caused, so that the overall performance of equipment is seriously influenced, and the popularization of the equipment in the whole industry is not facilitated; therefore, the heat resistance problem is an important problem to be solved in designing and constructing various types of electronic devices.

Most of the existing methods for solving the thermal problem of the electronic equipment in practical use are from the heat dissipation angle, and excess heat in the equipment is led out by increasing the heat dissipation capacity, so that the aim of ensuring the normal operation of the equipment is fulfilled, and the heat dissipation problem of part of the equipment can be solved; in practice, however, a part of the equipment is increasingly working in extreme environments, such as extremely cold, desert or sea, forest and other places which are rarely reached by people; the equipment working in high-temperature environment has the advantage that the external temperature is higher than the equipment temperature, so that the heat dissipation method is not used for the equipment.

Therefore, the heat dissipation design must be designed for such situations by adopting a completely new idea.

Disclosure of Invention

In view of the problems in the background art, the present invention is directed to: the high heat-resistant structure for heat dissipation of the optoelectronic device and the preparation method thereof are provided, and the problem that the equipment working in a high-temperature environment is not used by a common heat dissipation method because the external temperature is higher than the equipment temperature is solved.

The purpose of the invention is realized by the following technical scheme: the invention comprises a high heat-resistant structure for heat dissipation of an optoelectronic device and a preparation method thereof, wherein the high heat-resistant structure for heat dissipation of the optoelectronic device comprises an attachment surface and a film structure from bottom to top in sequence, and the attachment surface is a substrate or the surface of a radiator; the substrate is a rigid substrate or a flexible substrate; the total thickness of the thin film structure is not more than 25 um; the film structure sequentially comprises a heat absorbing agent, an intermediate connecting agent, a heat resisting agent and a protective agent from bottom to top; the film structure comprises, by mass, 35-45% of a heat absorbing agent, 10-20% of an intermediate connecting agent, 30-50% of a heat resisting agent and 5% of a protective agent;

preferably, the rigid substrate is glass or sapphire;

preferably, the flexible substrate is one of metal foil, polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate resin or polyacrylic acid film;

further, the heat absorbing agent is one or more of metal nanospheres or oxide nanospheres with three-dimensional space structures and good heat conductivity and heat absorption;

preferably, the heat absorbing agent is silver nanospheres.

Further, the intermediate connecting agent is a boron nitride water dispersion solution which adopts one treatment method of roller coating, an LB film method, blade coating, spin coating, drip coating, spray coating, a Czochralski method, a tape casting method, dip coating, ink-jet printing, self-assembly or screen printing;

further, the heat-resistant agent is one or more of a metal alloy nanowire or a metal nanowire;

preferably, the heat-resistant agent is a copper-iron alloy nanowire, a silver-iron alloy nanowire, a gold-iron alloy nanowire, an aluminum-iron alloy nanowire, a nickel-iron alloy nanowire, a cobalt-iron alloy nanowire, a manganese-iron alloy nanowire, a cadmium-iron alloy nanowire, an indium-iron alloy nanowire, a tin-iron alloy nanowire, a tungsten-iron alloy nanowire, a platinum-iron alloy nanowire, a silver-copper alloy nanowire, a gold-copper alloy nanowire, an aluminum-copper alloy nanowire, a nickel-copper alloy nanowire, a cobalt-copper alloy nanowire, a manganese-copper alloy nanowire, a cadmium-copper alloy nanowire, a tin-copper alloy nanowire, a tungsten-copper alloy nanowire, a platinum-copper alloy nanowire, a gold-silver alloy nanowire, an aluminum-silver alloy nanowire, a nickel-silver alloy nanowire, a cobalt-silver alloy nanowire, a manganese-silver alloy nanowire, a cadmium-silver alloy nanowire, an indium-silver alloy nanowire, a tin-, One or more of platinum-silver alloy nanowires, aluminum-gold alloy nanowires, nickel-gold alloy nanowires, cobalt-gold alloy nanowires, manganese-gold alloy nanowires, cadmium-gold alloy nanowires, indium-gold alloy nanowires, tin-gold alloy nanowires, tungsten-gold alloy nanowires, cobalt-nickel alloy nanowires, manganese-nickel alloy nanowires, cadmium-nickel alloy nanowires, indium-nickel alloy nanowires, tin-nickel alloy nanowires, tungsten-nickel alloy nanowires, platinum-nickel alloy nanowires, cadmium-manganese alloy nanowires, indium-manganese alloy nanowires, tin-manganese alloy nanowires, tungsten-manganese alloy nanowires, platinum-manganese alloy nanowires, indium-cadmium alloy nanowires, tin-cadmium alloy nanowires, tungsten-cadmium alloy nanowires, platinum-cadmium alloy nanowires, tin-indium alloy nanowires, tungsten-indium alloy nanowires, platinum-indium alloy nanowires, tungsten-tin alloy nanowires, platinum-tin alloy nanowires, and platinum-tungsten alloy nanowires;

further, the protective agent is a dried sea pine trunk extract containing polyether modified polysiloxane with the volume fraction of 10%;

a preparation method of a high heat-resistant structure for heat dissipation of an optoelectronic device comprises the following steps:

step S1: firstly, cleaning the surface of a radiator or the surface of a substrate, comprising the following steps:

step S1-1: respectively carrying out ultrasonic cleaning on the surface of the radiator or the surface of the substrate by using a detergent, acetone, deionized water and isopropanol;

step S1-2: drying the cleaned surface of the radiator or the surface of the substrate by using dry nitrogen;

step S1-3: then bombarding the surface of the radiator or the surface of the substrate by oxygen ions;

step S2: spraying the heat absorbing agent with the concentration of 0.02mg/ml on the surface of the radiator or the surface of the substrate processed in the step S1 by adopting a spraying method, wherein the spraying speed is 70-520 mu L/min;

step S3: spraying the intermediate connecting agent with the concentration of 1mg/ml on the surface of the radiator or the surface of the substrate treated in the step S2 by adopting a spraying method, wherein the spraying speed is 30-90 mu L/min;

step S4: drying the surface of the radiator or the surface of the substrate obtained in the step S3 at 80 ℃ for 5 min;

step S5: spraying heat-resistant agent with the concentration of 0.5% on the surface of the radiator or the surface of the substrate obtained in the step S4 by adopting a spraying method, wherein the spraying speed is 100-;

step S6: spraying a protective agent, namely a dried sea pine trunk extracting solution containing 10% of polyether modified polysiloxane by volume fraction, on the surface of the radiator or the surface of the substrate obtained in the step S5 by adopting a spraying method, wherein the spraying speed is 100 mu L/min;

step S7: drying the surface of the radiator or the surface of the substrate obtained in the step S6 at 50 ℃ for 3min to obtain a heat-resistant structure;

step S8: the heat-resistant structure obtained in step S7 was subjected to a heat resistance test.

In summary, due to the adoption of the technical scheme, the invention has the following positive technical effects:

1. the selected dried sea pine trunk extracting solution added with the polyether modified polysiloxane has the characteristics of environmental protection, flexibility and wrinkle generation after spraying and drying treatment with the metal nanowires or the metal alloy nanowires, can effectively increase the heat dissipation area, and has the antistatic effect and a good dust removal effect; the metal nanowire or the metal alloy nanowire has larger specific surface area and higher thermal conductivity, and can effectively improve the heat-resisting efficiency.

2. Meanwhile, the dried sea pine trunk extracting solution has a unique heat insulation function, can effectively reduce damage to equipment caused by high temperature in the external environment, and also has the characteristics of compactness and corrosion resistance, so that the service life of the equipment is prolonged.

3. The boron nitride water dispersion solution as the intermediate connecting agent between the nanospheres and the nanowires has a unique stable structure and strong thermal conductivity, and simultaneously has the functions of fixing the nanospheres, providing attachment points for the nanowires and increasing the contact between the heat absorbing agent and the heat resisting agent.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:

FIG. 1 is a schematic view of the structure of the high heat-resistant film of the present invention;

FIG. 2 is a schematic diagram of a method for preparing a high heat resistant thin film structure according to the present invention;

the labels in the figure are: 1-an attachment surface; 2-an endothermic agent; 3-a protective agent; 4-a heat-resistant agent; 5-an intermediate linking agent.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.

The features and properties of the present invention are described in further detail below with reference to examples.

Example one

As shown in figure 1, the total thickness of the strong heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride water dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane. The components are as follows:

35% of heat absorbing agent, 10% of intermediate connecting agent, 50% of heat-resistant agent and 5% of protective agent;

the preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of the substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 520 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 30 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resistant agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 120 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

Example two

As shown in fig. 1, the total thickness of the high heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride aqueous dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane. The components are as follows:

35 percent of heat absorbing agent, 15 percent of intermediate connecting agent, 45 percent of heat-resistant agent and 5 percent of protective agent

The preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of the substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 420 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 40 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resistant agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 120 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

EXAMPLE III

As shown in fig. 1, the total thickness of the high heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride aqueous dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane; the components are as follows:

35% of heat absorbing agent, 20% of intermediate connecting agent, 40% of heat-resistant agent and 5% of protective agent;

the preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of a substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 220 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 70 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resistant agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 220 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

Example four

As shown in fig. 1, the total thickness of the high heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride aqueous dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane. The components are as follows:

40% of heat absorbing agent, 20% of intermediate connecting agent, 35% of heat-resistant agent and 5% of protective agent;

the preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of a substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 120 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 80 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resistant agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 320 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

EXAMPLE five

As shown in fig. 1, the total thickness of the high heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride aqueous dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane. The components are as follows:

40% of heat absorbing agent, 15% of intermediate connecting agent, 40% of heat resisting agent and 5% of protective agent;

the preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of a substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 320 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 30 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resisting and protecting agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 320 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

EXAMPLE six

As shown in fig. 1, the total thickness of the high heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride aqueous dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane. The components are as follows:

45% of heat absorbent, 15% of intermediate connecting agent, 35% of heat-resistant agent and 5% of protective agent;

the preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of the substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 420 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 30 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resistant agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 220 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

EXAMPLE seven

As shown in fig. 1, the total thickness of the high heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride aqueous dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane. The components are as follows:

45% of heat absorbent, 20% of intermediate connecting agent, 30% of heat-resistant agent and 5% of protective agent;

the preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of a substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 70 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 80 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resistant agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 420 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

Example eight

As shown in fig. 1, the total thickness of the high heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride aqueous dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane. The components are as follows:

37% of heat absorbing agent, 20% of intermediate connecting agent, 38% of heat resisting agent and 5% of protective agent;

the preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of a substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 170 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 40 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resistant agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 520 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

Example nine

As shown in fig. 1, the total thickness of the high heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride aqueous dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane. The components are as follows:

43% of heat absorbing agent, 15% of intermediate connecting agent, 37% of heat-resistant agent and 5% of protective agent;

the preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of a substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 70 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 90 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resistant agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 320 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

Example ten

As shown in fig. 1, the total thickness of the high heat-resistant film is 25um, the heat absorbing agent is silver nanospheres, the intermediate connecting agent is a boron nitride aqueous dispersion solution, the heat-resistant agent is silver nanowires, and the protective agent is a dried sea pine trunk extract containing 10% polyether modified polysiloxane. The components are as follows:

45% of heat absorbent, 20% of intermediate connecting agent, 30% of heat-resistant agent and 5% of protective agent;

the preparation method comprises the following steps:

1. firstly, cleaning the surface of a radiator or the surface of a substrate to be sprayed, respectively carrying out ultrasonic cleaning by using a detergent, acetone, deionized water and isopropanol, drying by using dry nitrogen after cleaning, and then carrying out oxygen plasma bombardment treatment to ensure that the radiator and the substrate have good adhesiveness;

2. spraying the surface of the radiator treated in the step (1) or the surface of a substrate to be sprayed with the heat absorbent silver nanosphere water-soluble dispersion liquid with the concentration of 0.02mg/ml by adopting a spraying method, wherein the spraying speed is 70 uL/min;

3. spraying an intermediate connecting agent boron nitride water dispersion solution with the concentration of 1mg/ml on the surface of the heat absorption layer by adopting a spraying method, wherein the spraying speed is 90 uL/min;

4. drying the film structure obtained in the step (3) for 5min at 80 ℃;

5. spraying a heat-resistant agent silver nanowire isopropanol solution with the concentration of 0.5% on the surface of the film structure obtained in the step 4 by adopting a spraying method, wherein the spraying speed is 420 uL/min;

6. spraying a protective agent containing 10% polyether modified polysiloxane dried sea pine trunk extract on the surface of the film structure obtained in the step 5 by adopting a spraying method, wherein the spraying speed is 100 uL/min;

7. drying the film structure obtained in the step 6 at 50 ℃ for 3min to obtain a high heat-resistant film for a photoelectronic device;

8. and (4) carrying out a heat resistance test on the film structure obtained in the step (7).

Table 1 shows the temperature (in degrees C.) of the pure radiator and the radiator coated with the heat-resistant film of examples 1 to 10 at the same starting temperature of 90 degrees C for different time intervals.

Time (h)	0	2	4	6	8	10
							Pure radiator	90	83	77	70	65	58
Example 1	90	82	75	68	61	47
							Example 2	90	80	73	66	56	50
Example 3	90	79	67	59	50	39
							Example 4	90	83	71	63	55	48
Example 5	90	81	74	65	58	45
							Example 6	90	79	71	63	55	47
Example 7	90	81	69	61	52	42
							Example 8	90	80	70	59	53	44
Example 9	90	82	71	62	54	43
							Example 10	90	79	70	62	52	43

TABLE 1

In the foregoing, various embodiments of the invention have been described with reference to specific examples; however, it should be understood that: the description of the various embodiments of the invention is not intended to be limiting; the above description is intended to be exemplary of the invention and not to limit the scope of the invention, which is defined by the claims.