阅读说明：本技术 Tsv转接板结构及其制造方法 (TSV adapter plate structure and manufacturing method thereof ) 是由 戴风伟 曹立强 于 2020-12-15 设计创作，主要内容包括：本发明提供了一种TSV转接板结构及其制造方法,包括：制作基板,所述基板包括依次堆叠的底层基板层、中间基板层及顶层基板层；在顶层基板层上形成TSV结构,通过所述TSV结构暴露出部分中间基板层；去除底层基板层；在中间基板层上的TSV结构中形成电性引出结构。实现了所有TSV通孔一遇到中间基板层即可停止打孔,打孔深度一致,且打孔深度可控,可以解决现有技术方案中TSV刻蚀深度不能精确控制的问题,其次通过去除底层基板层,可以暴露出中间基板层,在中间基板层上直接形成电性引出结构,作为TSV结构的露头将所述TSV结构的电性引出,同时实现了背面露头工艺的简单可控。(The invention provides a TSV adapter plate structure and a manufacturing method thereof, wherein the TSV adapter plate structure comprises: manufacturing a substrate, wherein the substrate comprises a bottom substrate layer, a middle substrate layer and a top substrate layer which are sequentially stacked; forming a TSV structure on the top substrate layer, through which a portion of the middle substrate layer is exposed; removing the bottom substrate layer; an electrical lead-out structure is formed in the TSV structure on the intermediate substrate layer. The TSV structure is characterized in that the TSV structure is provided with a plurality of through holes, the through holes are formed in the middle substrate layer, the through holes are formed in the.)

1. A manufacturing method of a TSV adapter plate structure is characterized by comprising the following steps:

manufacturing a substrate, wherein the substrate comprises a bottom substrate layer, a middle substrate layer and a top substrate layer which are sequentially stacked;

forming a TSV structure on the top substrate layer, through which a portion of the middle substrate layer is exposed;

removing the bottom substrate layer;

an electrical lead-out structure is formed in the TSV structure on the intermediate substrate layer.

2. The method of claim 1, wherein the bottom substrate layer is made of silicon, the middle substrate layer is made of silicon dioxide, and the top substrate layer is made of silicon.

3. The method of manufacturing a TSV adapter plate structure of claim 1, further comprising:

before forming the TSV structure on the top layer substrate layer, a thinning process is carried out on the top layer substrate layer, so that the height of the top layer substrate layer is equal to the design depth of the TSV structure.

4. The method of manufacturing a TSV interposer structure of claim 1, wherein forming the TSV structure on the top substrate layer comprises:

the TSV structure forms a first through hole through a deep reactive ion etching process, and the etching process is carried out until the first through hole exposes the middle substrate layer.

5. The method for manufacturing the TSV adapter plate structure of claim 4, wherein a TSV insulating layer, a TSV barrier layer and a TSV seed layer are sequentially formed in the first through hole, and the first through hole is filled with electroplating to form the TSV metal connection column.

6. The method of manufacturing a TSV adapter plate structure of claim 5, further comprising:

and manufacturing a first RDL metal interconnection layer and/or a micro bump at the opening of the first through hole, wherein the first RDL metal interconnection layer and/or the micro bump are electrically connected with the TSV metal connecting column.

7. The method of manufacturing a TSV interposer structure of claim 1, wherein after removing the bottom substrate layer, the middle substrate layer is completely exposed.

8. The method of fabricating the TSV interposer structure of claim 5, wherein forming the electrical lead-out structure on the intermediate substrate layer comprises:

and forming a second through hole by the electrical leading-out structure through photoetching and etching processes until the TSV metal connecting column is exposed out of the second through hole.

9. The method of fabricating a TSV interposer structure of claim 8, wherein forming the electrical lead-out structure on the intermediate substrate layer further comprises:

and manufacturing a second RDL metal interconnection layer and/or a micro bump at the opening of the second through hole, wherein the second RDL metal interconnection layer and/or the micro bump are electrically connected with the TSV metal connecting column.

10. A TSV interposer structure, wherein the TSV interposer structure is formed by the manufacturing method of claim 1.

Technical Field

The invention relates to the technical field of integrated circuit packaging, in particular to a TSV adapter plate structure and a manufacturing method thereof.

Background

The microwave millimeter wave radio frequency integrated circuit technology is the basis of modern national defense weaponry and internet industry, and along with the rapid rise of the economy of internet plus such as intelligent communication, intelligent home, intelligent logistics, intelligent transportation and the like, the microwave millimeter wave radio frequency integrated circuit which bears the functions of data access and transmission also has huge practical requirements and potential markets.

In the background of the era of post moore's law, it has become more difficult to increase the degree of integration by means of conventional shrinking transistor dimensions. The existing electronic system is developing towards miniaturization, diversification and intellectualization, and finally a high-integration-level low-cost integrated electronic system with integration of multiple functions such as perception, communication, processing, transmission and the like is formed. The core technology of the multifunctional integrated electronic system is integration, and the multifunctional integrated electronic system is developing from plane integration to three-dimensional integration and from chip level to system level integration with higher integration level and complexity. The three-dimensional integrated system-in-package can solve the problem of integrating more transistors in the same area, and is a development direction in the future.

The structure of making the support plate or the cover plate to make the system-in-package through the adapter plate can change the plane layout of a chip into a stacked layout on the framework, and can integrate systems such as passive devices or discrete elements and the like to construct, so that the precision and the density are increased, the performance is greatly improved, the development trend of the future radio frequency integrated circuit technology is represented, and great advantageous characteristics exist in multiple aspects: a) the three-dimensional heterogeneous integrated system-in-package adopts a chip shell to complete all interconnection of a system, so that the total welding spots are greatly reduced, the connecting line distance of elements is shortened, and the electrical property is improved. b) Two or more chips are stacked in the same adapter plate chip in the three-dimensional heterogeneous integrated system-in-package (SIP) mode, the space in the Z direction is also utilized, package pins do not need to be added, the area ratio of the two chips stacked in the same shell to the chips is larger than 100%, and the stacking of the three chips can be increased to 250%; c) small physical size and light weight. For example, the most advanced technology can realize the ultrathin thickness of 4-layer stacked chips with the thickness of only 1mm, and the weight of three-layer stacked chips is reduced by 35%;

different technologies (such as MEMS technology, SiGe HBT, SiGe BiCMOS, Si CMOS, III-V (InP, GaN, GaAs) MMIC technology and the like) and chips (such as radio frequency, biological, micro-electro-mechanical and photoelectric chips and the like) made of different materials (such as Si, GaAs and InP) and having different functions are assembled to form a system, so that the system has good compatibility and can be combined with integrated passive elements. There is data showing that passive components currently used in radio and portable electronic machines can be embedded at least 30-50%.

In practical application, however, the application of the adapter plate is not widely popularized, mainly because the process for manufacturing the adapter plate is too complicated, the TSV etching depth is not controllable, the etching uniformity is generally 5% -10%, and the etching precision causes great difficulty to the TSV exposure process; in addition, the passivation process after the exposure of the TSV back surface has certain difficulty and reliability no matter the dielectric layer scheme or the SiO2 scheme is adopted, and the exposure height is difficult to control, so that the manufacturing difficulty of the passivation layer is increased.

Disclosure of Invention

The invention aims to provide a TSV adapter plate structure and a manufacturing method thereof, and aims to solve the problem that the etching precision of the conventional TSV is difficult to control.

In order to solve the above technical problems, the present invention provides a method for manufacturing a TSV interposer structure, including:

manufacturing a substrate, wherein the substrate comprises a bottom substrate layer, a middle substrate layer and a top substrate layer which are sequentially stacked;

forming a TSV structure on the top substrate layer, through which a portion of the middle substrate layer is exposed;

removing the bottom substrate layer;

an electrical lead-out structure is formed in the TSV structure on the intermediate substrate layer.

Optionally, in the manufacturing method of the TSV interposer structure, the bottom substrate layer is made of silicon, the middle substrate layer is made of silicon dioxide, and the top substrate layer is made of silicon.

Optionally, in the method for manufacturing a TSV adapter plate structure, the method further includes:

before forming the TSV structure on the top layer substrate layer, a thinning process is carried out on the top layer substrate layer, so that the height of the top layer substrate layer is equal to the design depth of the TSV structure.

Optionally, in the method for manufacturing the TSV interposer structure, forming the TSV structure on the top substrate layer includes:

the TSV structure forms a first through hole through a deep reactive ion etching process, and the etching process is carried out until the first through hole exposes the middle substrate layer.

Optionally, in the manufacturing method of the TSV adapter plate structure, a TSV insulating layer, a TSV barrier layer, and a TSV seed layer are sequentially formed in the first through hole, and the first through hole is filled with an electroplating solution to form a TSV metal connection column.

Optionally, in the method for manufacturing a TSV adapter plate structure, the method further includes:

and manufacturing a first RDL metal interconnection layer and/or a micro bump at the opening of the first through hole, wherein the first RDL metal interconnection layer and/or the micro bump are electrically connected with the TSV metal connecting column.

Optionally, in the method for manufacturing the TSV interposer structure, after removing the bottom substrate layer, the middle substrate layer is completely exposed.

Optionally, in the method for manufacturing the TSV interposer structure, the forming of the electrical lead-out structure on the middle substrate layer includes:

and forming a second through hole by the electrical leading-out structure through photoetching and etching processes until the TSV metal connecting column is exposed out of the second through hole.

Optionally, in the method for manufacturing the TSV interposer structure, the forming of the electrical lead-out structure on the middle substrate layer further includes:

and manufacturing a second RDL metal interconnection layer and/or a micro bump at the opening of the second through hole, wherein the second RDL metal interconnection layer and/or the micro bump are electrically connected with the TSV metal connecting column.

The invention also provides a TSV adapter plate structure which is formed by the manufacturing method.

In the TSV adapter plate structure and the manufacturing method thereof provided by the invention, the TSV structure is formed on the top substrate layer by manufacturing the structure that the bottom substrate layer, the middle substrate layer and the top substrate layer are sequentially stacked, so that the situation that drilling can be stopped as soon as all TSV through holes meet the middle substrate layer is realized, the drilling depth is consistent, and the drilling depth is controllable, the problem that the TSV etching depth cannot be accurately controlled in the prior art can be solved, then the middle substrate layer can be exposed by removing the bottom substrate layer, an electrical leading-out structure is directly formed on the middle substrate layer and is used as an exposing head of the TSV structure to lead out the electrical property of the TSV structure, and meanwhile, the simple controllability of a back exposing head process is realized.

The bottom substrate layer is made of silicon, the middle substrate layer is made of silicon dioxide, and the top substrate layer is made of silicon, namely, an SOI wafer is used as a TSV adapter plate to manufacture a wafer, so that the whole process flow is compatible with a wafer-level process, and the method has good realizability. According to the invention, the buried oxide layer (middle substrate layer) of the SOI wafer is used as an etching stop layer of the TSV structure to control the etching depth of the TSV structure and ensure the depth consistency and precision of the TSV structure; the bottom substrate layer is removed until the middle substrate layer is completely exposed, namely, the buried oxide layer of the SOI wafer is used as a stop layer of the back thinning process of the TSV structure, so that the thinning thickness of the TSV structure can be accurately controlled; after thinning, the buried oxide layer is directly etched and windowed, so that the back exposure process of the TSV structure can be realized, and the process is simple and controllable.

Drawings

FIG. 1 is a schematic diagram of a substrate manufactured by the method for manufacturing a TSV adapter plate structure according to an embodiment of the present invention;

FIG. 2 is a schematic diagram illustrating a top substrate layer thinning process of a method for manufacturing a TSV adapter plate structure according to an embodiment of the present invention;

FIG. 3 is a schematic view illustrating a first through hole formed by the method for manufacturing a TSV adapter plate structure according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of a TSV structure formed by the method for manufacturing the TSV adapter structure according to the embodiment of the present invention;

FIG. 5 is a schematic view of a method for manufacturing a TSV adapter plate structure according to an embodiment of the present invention, wherein a bottom substrate layer is removed;

FIG. 6 is a schematic diagram illustrating a second via hole formed by the method for manufacturing a TSV adapter plate structure according to an embodiment of the present invention;

FIG. 7 is a schematic diagram of an electrical lead-out structure formed by the method for manufacturing a TSV adapter plate structure according to an embodiment of the present invention;

shown in the figure: 1-an underlying substrate layer; 2-an intermediate substrate layer; 3-top substrate layer; 4-a first via; 5-TSV insulating layers; 6-TSV metal connecting columns; 7-a second via; 8-electrical lead-out structure/second RDL metal interconnect layer and/or micro bump; 9-TSV structure.

Detailed Description

The TSV adapter structure and the method for manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.

Furthermore, features from different embodiments of the invention may be combined with each other, unless otherwise indicated. For example, a feature of the second embodiment may be substituted for a corresponding or functionally equivalent or similar feature of the first embodiment, and the resulting embodiments are likewise within the scope of the disclosure or recitation of the present application.

The core idea of the invention is to provide a TSV adapter plate structure and a manufacturing method thereof, so as to solve the problem that the etching precision of the conventional TSV is difficult to control.

In order to realize the idea, the invention provides a TSV adapter plate structure and a manufacturing method thereof, wherein the TSV adapter plate structure comprises: manufacturing a substrate, wherein the substrate comprises a bottom substrate layer, a middle substrate layer and a top substrate layer which are sequentially stacked; forming a TSV structure on the top substrate layer, through which a portion of the middle substrate layer is exposed; removing the bottom substrate layer; an electrical lead-out structure is formed in the TSV structure on the intermediate substrate layer.

The embodiment provides a manufacturing method of a TSV adapter plate structure, which comprises the following steps: manufacturing a substrate, wherein the substrate comprises a bottom substrate layer 1, a middle substrate layer 2 and a top substrate layer 3 which are sequentially stacked; forming a TSV structure 9 on the top substrate layer 3; removing the bottom substrate layer 1; forming an electrical lead-out structure 8 on the middle substrate layer 2; the electrical leading-out structure 8 leads out the electrical property of the TSV structure 9. That is, the TSV structures 9 are formed on the top substrate layer 3, and a portion of the middle substrate layer 2 is exposed through the TSV structures 9; removing the bottom substrate layer 1; an electrical lead-out structure 8 is formed in the TSV structure 9 on the intermediate substrate layer 2.

In an embodiment of the present invention, in the method for manufacturing the TSV interposer structure, the material of the bottom substrate layer 1 is silicon, the material of the middle substrate layer 2 is silicon dioxide, and the material of the top substrate layer 3 is silicon.

In an embodiment of the present invention, in the method for manufacturing a TSV adapter structure, the method further includes: before forming the TSV structure 9 on the top layer substrate layer 3, a thinning process is performed on the top layer substrate layer 3, so that the height of the top layer substrate layer 3 is equal to the design depth of the TSV structure 9.

In an embodiment of the present invention, in the method for manufacturing the TSV interposer structure, the forming of the TSV structure 9 on the top substrate layer 3 includes: the TSV structure 9 forms the first through hole 4 through a deep reactive ion etching process, and the etching process is performed until the first through hole 4 exposes the middle substrate layer 2.

In an embodiment of the present invention, in the method for manufacturing the TSV interposer structure, the TSV insulating layer 5, the TSV barrier layer (not shown) and the TSV seed layer (not shown) are sequentially formed in the first via 4, and the first via 4 is filled with an electroplating solution to form the TSV metal connection pillar 6.

In an embodiment of the present invention, in the method for manufacturing a TSV adapter structure, the method further includes: at the opening of the first through hole 4, a first RDL metal interconnection layer and/or a micro bump (not shown in the figure) is fabricated, and the first RDL metal interconnection layer and/or the micro bump are electrically connected with the TSV metal connection column 6.

In an embodiment of the present invention, in the method for manufacturing the TSV interposer structure, after removing the bottom substrate layer 1, the middle substrate layer 2 is completely exposed.

In an embodiment of the present invention, in the method for manufacturing the TSV interposer structure, the forming of the electrical lead-out structure 8 on the middle substrate layer 2 includes: the electrical leading-out structure 8 forms a second through hole 7 through photoetching and etching processes, and the etching process is carried out until the second through hole 7 exposes the TSV metal connecting column 6.

In an embodiment of the present invention, in the method for manufacturing a TSV interposer structure, the forming of the electrical lead-out structure 8 on the middle substrate layer 2 further includes: and manufacturing a second RDL metal interconnection layer and/or a micro bump 8 at the opening of the second through hole 7, wherein the second RDL metal interconnection layer and/or the micro bump 8 is electrically connected with the TSV metal connecting column 6.

The embodiment also provides a TSV adapter plate structure which is formed through the manufacturing method.

In the TSV adapter plate structure and the manufacturing method thereof provided by the invention, by manufacturing a structure in which a bottom substrate layer 1, a middle substrate layer 2 and a top substrate layer 3 are stacked in sequence, the TSV structure 9 is formed on the top substrate layer 3, so that the punching can be stopped as soon as all TSV through holes meet the middle substrate layer 2, the punching depth is consistent, and the punching depth is controllable, the problem that the TSV etching depth cannot be accurately controlled in the prior art can be solved, secondly, the middle substrate layer 2 can be exposed by removing the bottom substrate layer 1, an electrical leading-out structure 8 is directly formed on the middle substrate layer 2 and used as an outcrop of the TSV structure 9 to lead out the electrical property of the TSV structure 9, in addition, the TSV adapter plate structure and the manufacturing method thereof provided by the invention have the advantages that the whole process flow is compatible with a wafer level process, and the realization is very good.

According to the invention, the bottom substrate layer 1 is made of silicon, the middle substrate layer 2 is made of silicon dioxide, and the top substrate layer 3 is made of silicon, namely, an SOI wafer is used as a TSV adapter plate to manufacture a wafer, so that the whole process flow is compatible with a wafer-level process, and the wafer-level process has good realizability. According to the invention, the buried oxide layer (middle substrate layer 2) of the SOI wafer is used as an etching stop layer of the TSV structure 9 to control the etching depth of the TSV structure 9, so that the depth consistency and precision of the TSV structure 9 are ensured; the invention removes the bottom substrate layer 1 until the middle substrate layer 2 is completely exposed, namely, the buried oxide layer of the SOI wafer is used as a cut-off layer of the back thinning process of the TSV structure 9, so that the thinning thickness of the TSV structure 9 can be accurately controlled; after thinning, the buried oxide layer is directly etched and windowed, so that the back exposure process of the TSV structure 9 can be realized, and the process is simple and controllable.

In particular, Deep Reactive Ion Etching (DRIE), a microelectronic dry Etching process. High aspect ratio silicon etching techniques based on fluorine-based gases. Etching is performed by chemical action and physical action, as in the reactive ion etching principle. The difference lies in that: two radio frequency sources: the generation of plasma is separated from the generation of self-bias voltage, so that the contradiction between radio frequency power and plasma density in RIE etching is effectively avoided; bosch process with alternating etching and passivation: the protection of the side wall is realized, the controllable lateral etching can be realized, and the side wall with a steep or other inclined angles can be manufactured. DRIE process step (Bosch process): passivation-etching-passivation-etching; passivation: C4F8 gas is introduced into the reaction chamber, and a polymer film is formed through chemical reaction; etching: SF6 gas is introduced into the reaction chamber to carry out physical and chemical etching.

In summary, the embodiments described above describe the TSV adapter structure and the manufacturing method thereof in detail, but the invention includes but is not limited to the configurations listed in the above embodiments, and any modifications based on the configurations provided by the above embodiments are within the scope of the invention. One skilled in the art can take the contents of the above embodiments to take a counter-measure.

The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.

The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.