阅读说明：本技术 一种双极化共口径阵列天线 (Dual-polarized common-aperture array antenna ) 是由 杨清凌 高式昌 文乐虎 任晓飞 于 2020-11-27 设计创作，主要内容包括：本发明公开了一种双极化共口径阵列天线,包括从上到下依次层叠设置的第一金属层、第一介质层,第二金属层,第二介质层,第三金属层,第三介质层,第四金属层,第四介质层,第五金属层,第五介质层和第六金属层。本发明所公开的双极化共口径阵列天线,采用串馈和并馈并用的方式,其中串馈网络已集成于天线单元的设计中,因此阵列天线的馈电网络将大大简化,这使得天线的整体损耗和性能得到了较大提升。(The invention discloses a dual-polarized common-aperture array antenna which comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer, a fourth metal layer, a fourth dielectric layer, a fifth metal layer, a fifth dielectric layer and a sixth metal layer which are sequentially stacked from top to bottom. The dual-polarization common-aperture array antenna disclosed by the invention adopts a mode of combining series feed and parallel feed, wherein a series feed network is integrated in the design of the antenna unit, so that the feed network of the array antenna is greatly simplified, and the integral loss and the performance of the antenna are greatly improved.)

1. A dual-polarized common-aperture array antenna is characterized in that: the metal-clad laminate comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer, a fourth metal layer, a fourth dielectric layer, a fifth metal layer, a fifth dielectric layer and a sixth metal layer which are sequentially stacked from top to bottom; etching the antenna radiation aperture on the first metal layer, arranging a metallized through hole structure corresponding to the antenna radiation aperture on the first metal layer in the first dielectric layer, etching and exciting a cross slot array of each antenna unit in the antenna radiation aperture of the first metal layer on the second metal layer, arranging a metallized through hole structure corresponding to the cross slot array on the second metal layer in the second dielectric layer, etching and exciting a cross coupling slot array of the metallized through hole structure in the second dielectric layer on the third metal layer, arranging a metallized through hole structure corresponding to the cross coupling slot array on the third metal layer in the third dielectric layer, etching a cross slot structure array on the fourth metal layer as a coupling channel of signals from the fourth dielectric layer to the third dielectric layer, and respectively arranging two four-in-one power divider which are arranged in reverse direction in the transverse direction and the longitudinal direction of the fourth dielectric layer, the center position is an upper layer structure of the orthogonal mode converter, four output ports of the upper layer structure are respectively connected with input ports of the four power dividers, a cross gap and a substrate integrated waveguide-to-microstrip structure are etched on a fifth metal layer, a fifth dielectric layer is provided with a substrate integrated waveguide and a lower layer structure of the orthogonal mode converter, the lower layer structure is provided with two input ports, signal transmission between the upper layer structure and the lower layer structure of the orthogonal mode converter is realized through the cross gap on the fifth metal layer, and a sixth metal layer is a floor layer.

2. The dual polarized common aperture array antenna of claim 1, wherein: the antenna radiation aperture on the first metal layer is composed of an antenna subarray array, each antenna subarray is composed of four antenna units, each antenna unit is composed of a cylindrical metalized cavity located on the first dielectric layer and a patch unit, each antenna unit is provided with four ports which are arranged up, down, left and right, and connected with the antenna units which are adjacent up, down, left and right through the ports.

3. The dual polarized common aperture array antenna of claim 2, wherein: a small short slot is cut around each antenna element.

4. The dual polarized common aperture array antenna of claim 2, wherein: each cross slot in the cross slot array on the second metal layer is the same as the number and opposite to the position of the excited antenna unit, the metallized through hole in the second medium layer is composed of square cavity arrays which are the same as the number and opposite to the position of the antenna subarrays on the first metal layer, and every four cross slots on the second metal layer share one square cavity.

5. The dual polarized common aperture array antenna of claim 4, wherein: all the square cavities in the second dielectric layer have the same size and the mode is TE₄₁₀And TE₁₄₀And the space between the square cavities is twice of the space between the cross-shaped gaps on the second metal layer.

6. The dual polarized common aperture array antenna of claim 4, wherein: the metallized through hole structure in the third medium layer comprises a plurality of transverse substrate integrated waveguides and longitudinal substrate integrated waveguides, each cross coupling gap on the third metal layer is respectively positioned at the central position of each intersection of the transverse substrate integrated waveguides and the longitudinal substrate integrated waveguides, and in addition, each periphery of each intersection of the transverse substrate integrated waveguides and the longitudinal substrate integrated waveguides is respectively provided with a metallized through hole, so that the TE is formed at the intersection₂₁₀And TE₁₂₀A patterned metal cavity.

7. The dual polarized common aperture array antenna of claim 6, wherein: in the transverse gap structure array on the fourth metal layer, every two transverse gaps form a group.

8. The dual polarized common aperture array antenna of claim 1, wherein: a cross slit etched in the fifth metal layer below the TE of the orthogonal mode converter₁₂₀And TE₂₁₀Center of mode cavity, orthogonal mode transducer lower layer TE₁₂₀And TE₂₁₀The center of the mode cavity is a semi-open cavity, two adjacent edges are provided with excitation windows, and the two excitation windows are respectively connected with one input port.

9. The dual polarized common aperture array antenna of claim 1, wherein: the dielectric plates of all the dielectric layers are Rogers RO4003C, the dielectric constant is 3.55, the loss tangent is 0.0027, and the thickness is 0.813 mm; all metal layers were 1 ounce thick, and the cross-sectional height of the entire antenna was 0.27 free-space wavelengths.

10. The dual polarized common aperture array antenna of claim 7, wherein: the diameter of the cylindrical metalized cavity on the first dielectric layer is 6 mm; the length of the cross gap on the second metal layer is 2.7mm, and the width of the cross gap on the second metal layer is 0.3 mm; the square cavity in the second dielectric layer is a substrate integrated waveguide square cavity with the size of 16mm multiplied by 16 mm; the length of the cross coupling gap on the third metal layer is 2.3mm, and the width of the cross coupling gap on the third metal layer is 0.3 mm; the width of the transverse substrate integrated waveguide and the width of the longitudinal substrate integrated waveguide in the third dielectric layer are 6.4mm, the diameter of the metalized through hole at the periphery of each intersection of the transverse substrate integrated waveguide and the longitudinal substrate integrated waveguide in the third dielectric layer is 0.3mm, and the diameter is 3.5mm relative to the center of the intersection; the length of the transverse gap on the fourth metal layer is 3.3mm, the width of the transverse gap on the fourth metal layer is 0.3mm, and the distance between two transverse gaps in the same group is 2.2 mm.

Technical Field

The invention belongs to the technical field of microwave and millimeter wave antennas, and particularly relates to a dual-polarized common-caliber microwave and millimeter wave array antenna in the field.

Background

In wireless communication systems, antennas are key components for signal reception and transmission. With the rapid development of mobile communication technology, antenna systems are required to realize dual polarization and stable radiation gain within an operating frequency band, and to have characteristics of miniaturization, low profile, and low cost.

In the microwave and millimeter wave frequency band, there are many ways to implement dual-polarized array antennas. The methods can be mainly divided into two categories: 1) the non-common-aperture dual-polarized antenna array, i.e. the linear arrays with different polarizations are arranged in a staggered manner, has the advantages of simple design and the defects of high cross polarization level, large size and low aperture efficiency. 2) A common-aperture dual-polarized antenna array, i.e. each antenna unit can simultaneously operate in dual-polarization state, so that its advantages are many, such as compact structure, high aperture efficiency, low cross-polarization level, etc., and in many mobile communication devices, a common-aperture scheme is generally adopted to design and implement a dual-polarized antenna array based on the consideration of miniaturization and low cross-polarization.

The common-caliber dual-polarized antenna can be roughly divided into the following types: a) a micro-strip patch antenna and a Vivaldi antenna based on probe feed; b) microstrip antenna based on center feed and corner feed; c) slot and cavity backed antennas based on metal waveguide structures; d) a slot and cavity-backed antenna based on a substrate integrated waveguide structure. a) The quasi-antenna has the advantages of easy realization of very wide bandwidth and simple structure, but has the disadvantages of high profile and difficult integrated design. b) The quasi-antenna has the advantages of being capable of being realized by adopting a one-layer structure or a few-layer structure, low in cost, low in section and simple in structure, and has the defect that stray radiation from the microstrip line is not easy to inhibit. c) The advantage of the quasi-antenna is high power capacity, but the disadvantage is that it is not easy to process and integrate. d) The quasi-antenna has the advantages of easy processing and integration of a two-dimensional antenna and high power capacity of a three-dimensional metal waveguide structure. However, for the antennas of c) and d), the feeding networks are designed at different layers to prevent the feeding networks from crossing each other. This results in an extremely complex overall structure of the antenna, and the profile increases as the number of layers increases. From the existing reports, although the metal waveguide structure and the substrate integrated waveguide have advantages in antenna design, the problem of complex dual-polarized array antenna feed network is not well solved. The requirements of low loss, simple feed network, low cross polarization level, low profile, high gain, miniaturization and the like are difficult to meet at the same time.

Disclosure of Invention

The invention aims to solve the technical problem of providing a dual-polarized common-aperture microwave millimeter wave planar array antenna which has low cross polarization level, high aperture efficiency, low profile and simple feed network.

The invention adopts the following technical scheme:

the improvement of a dual-polarized common-aperture array antenna is as follows: the metal-clad laminate comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer, a fourth metal layer, a fourth dielectric layer, a fifth metal layer, a fifth dielectric layer and a sixth metal layer which are sequentially stacked from top to bottom; etching the antenna radiation aperture on the first metal layer, arranging a metallized through hole structure corresponding to the antenna radiation aperture on the first metal layer in the first dielectric layer, etching and exciting a cross slot array of each antenna unit in the antenna radiation aperture of the first metal layer on the second metal layer, arranging a metallized through hole structure corresponding to the cross slot array on the second metal layer in the second dielectric layer, etching and exciting a cross coupling slot array of the metallized through hole structure in the second dielectric layer on the third metal layer, arranging a metallized through hole structure corresponding to the cross coupling slot array on the third metal layer in the third dielectric layer, etching a cross slot structure array on the fourth metal layer as a coupling channel of signals from the fourth dielectric layer to the third dielectric layer, and respectively arranging two four-in-one power divider which are arranged in reverse direction in the transverse direction and the longitudinal direction of the fourth dielectric layer, the center position is an upper layer structure of the orthogonal mode converter, four output ports of the upper layer structure are respectively connected with input ports of the four power dividers, a cross gap and a substrate integrated waveguide-to-microstrip structure are etched on a fifth metal layer, a fifth dielectric layer is provided with a substrate integrated waveguide and a lower layer structure of the orthogonal mode converter, the lower layer structure is provided with two input ports, signal transmission between the upper layer structure and the lower layer structure of the orthogonal mode converter is realized through the cross gap on the fifth metal layer, and a sixth metal layer is a floor layer.

Furthermore, the antenna radiation aperture on the first metal layer is formed by an antenna subarray array, each antenna subarray is formed by four antenna units, each antenna unit is formed by a cylindrical metalized cavity and a patch unit which are located on the first dielectric layer, each antenna unit is provided with four ports which are arranged up, down, left and right, and is connected with the antenna unit which is adjacent to the antenna unit up, down, left and right through the ports.

Further, a small short slot is cut around each antenna element.

Furthermore, each cross slot in the cross slot array on the second metal layer is the same as the number and opposite to the position of the excited antenna unit, the metallized through hole in the second dielectric layer is composed of square cavity arrays which are the same as the number and opposite to the position of the antenna subarrays on the first metal layer, and every four cross slots on the second metal layer share one square cavity.

Further, all the square cavities in the second dielectric layer have the same size, and the mode is TE₄₁₀And TE₁₄₀And the space between the square cavities is twice of the space between the cross-shaped gaps on the second metal layer.

Furthermore, the metallized through hole structure in the third medium layer comprises a plurality of transverse substrate integrated waveguides and longitudinal substrate integrated waveguides, each cross coupling gap on the third metal layer is respectively positioned at the central position of each intersection of the transverse substrate integrated waveguides and the longitudinal substrate integrated waveguides, and in addition, each metallized through hole is arranged at the periphery of each intersection of the transverse substrate integrated waveguides and the longitudinal substrate integrated waveguides, so that the TE is formed at the intersection₂₁₀And TE₁₂₀A patterned metal cavity.

Furthermore, in the transverse gap structure array on the fourth metal layer, every two transverse gaps form a group.

Further, a cross-shaped slit etched in the fifth metal layer is positioned below the TE layer of the orthogonal mode converter₁₂₀And TE₂₁₀Center of mode cavity, orthogonal mode transducer lower layer TE₁₂₀And TE₂₁₀The center of the mode cavity is a semi-open cavity, two adjacent edges are provided with excitation windows, and the two excitation windows are respectively connected with one input port.

Furthermore, the dielectric plates of all the dielectric layers are Rogers RO4003C, the dielectric constant is 3.55, the loss tangent is 0.0027, and the thickness is 0.813 mm; all metal layers were 1 ounce thick, and the cross-sectional height of the entire antenna was 0.27 free-space wavelengths.

Further, the diameter of the cylindrical metalized cavity on the first dielectric layer is 6 mm; the length of the cross gap on the second metal layer is 2.7mm, and the width of the cross gap on the second metal layer is 0.3 mm; the square cavity in the second dielectric layer is a substrate integrated waveguide square cavity with the size of 16mm multiplied by 16 mm; the length of the cross coupling gap on the third metal layer is 2.3mm, and the width of the cross coupling gap on the third metal layer is 0.3 mm; the width of the transverse substrate integrated waveguide and the width of the longitudinal substrate integrated waveguide in the third dielectric layer are 6.4mm, the diameter of the metalized through hole at the periphery of each intersection of the transverse substrate integrated waveguide and the longitudinal substrate integrated waveguide in the third dielectric layer is 0.3mm, and the diameter is 3.5mm relative to the center of the intersection; the length of the transverse gap on the fourth metal layer is 3.3mm, the width of the transverse gap on the fourth metal layer is 0.3mm, and the distance between two transverse gaps in the same group is 2.2 mm.

The invention has the beneficial effects that:

the dual-polarization common-aperture array antenna disclosed by the invention adopts a mode of combining series feed and parallel feed, wherein a series feed network is integrated in the design of the antenna unit, so that the feed network of the array antenna is greatly simplified, and the integral loss and the performance of the antenna are greatly improved. Meanwhile, due to the introduction of the orthogonal mode converter, the antenna array is excited differentially, so that a very low cross polarization level is obtained. The antenna unit adopts a structure of a microstrip antenna, a slot coupling excitation and a back cavity, and improves the working bandwidth of the antenna.

The dual-polarized common-aperture array antenna disclosed by the invention has the advantages that the relative impedance bandwidth can reach 5.7%, the peak gain is 22.8dBi, the port isolation is more than 20dB in the whole impedance bandwidth, and the cross polarization discrimination rate is 43 dB. Compared with the reported dual-polarization microwave millimeter wave planar array, the array antenna provided by the invention can simplify the design of the feed network on the premise of low section and high integration level, obtain extremely low cross polarization level and high gain, and has the advantages of simple structure, small size, high aperture efficiency, high cross polarization discrimination rate and the like.

Drawings

Fig. 1 is an external view of a dual-polarized common aperture array antenna disclosed in embodiment 1 of the present invention;

fig. 2 is a stacked view of the dual polarized common aperture array antenna disclosed in embodiment 1 of the present invention;

fig. 3 is a schematic view of the overall structure of the dual-polarized common-aperture array antenna disclosed in embodiment 1 of the present invention;

fig. 4 is an array aperture schematic diagram of the dual-polarized common-aperture array antenna disclosed in embodiment 1 of the present invention;

fig. 5 is a diagram of the port positions of the antenna units in the dual-polarized common-aperture array antenna disclosed in embodiment 1 of the present invention;

FIG. 6 shows TE in the dual-polarized common-aperture array antenna disclosed in embodiment 1 of the present invention₄₁₀And TE₁₄₀Schematic diagrams of a mode cavity and a cross slit;

fig. 7 is a schematic diagram of the integrated waveguides and cross coupling slots on the horizontal and vertical substrates in the dual-polarized common-aperture array antenna disclosed in embodiment 1 of the present invention;

fig. 8 is a schematic diagram of a one-to-four power divider, a transverse slot structure and an upper layer structure of an orthogonal mode transformer in the dual-polarized common-aperture array antenna disclosed in embodiment 1 of the present invention;

fig. 9 is a schematic view of the lower layer structure and the feed structure of the orthogonal mode transformer in the dual-polarized common-aperture array antenna disclosed in embodiment 1 of the present invention;

fig. 10 is a schematic view of the overall structure of an orthogonal mode transformer in the dual-polarized common aperture array antenna disclosed in embodiment 1 of the present invention;

fig. 11a is a schematic top view of an upper layer structure of an orthogonal mode transformer in the dual-polarized common aperture array antenna disclosed in embodiment 1 of the present invention

Fig. 11b is a schematic top view of the lower layer structure of the orthogonal mode transformer in the dual-polarized common aperture array antenna disclosed in embodiment 1 of the present invention;

fig. 12 is a schematic structural diagram of a 180 ° substrate integrated waveguide elbow of the dual-polarized common-aperture array antenna disclosed in embodiment 1 of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Embodiment 1, as shown in fig. 1 to 3, this embodiment discloses a dual-polarized common-aperture array antenna, which includes, sequentially stacked from top to bottom, a first metal layer 11, a first dielectric layer 17, a second metal layer 12, a second dielectric layer 18, a third metal layer 13, a third dielectric layer 19, a fourth metal layer 14, a fourth dielectric layer 110, a fifth metal layer 15, a fifth dielectric layer 111, and a sixth metal layer 16; etching an antenna radiation aperture 21 on a first metal layer, arranging a metalized through hole structure corresponding to the antenna radiation aperture on the first metal layer in a first dielectric layer, etching and exciting a cross slot array of each antenna unit in the antenna radiation aperture of the first metal layer on a second metal layer, arranging a metalized through hole structure corresponding to the cross slot array on the second metal layer in a second dielectric layer, etching and exciting a cross coupling slot array of the metalized through hole structure in the second dielectric layer on a third metal layer, arranging a metalized through hole structure corresponding to the cross coupling slot array on the third metal layer in a third dielectric layer, etching a transverse slot structure array on a fourth metal layer as a coupling channel of a signal from the fourth dielectric layer to the third dielectric layer, and respectively arranging two one-to-four power dividers 61 which are reversely arranged in the transverse direction and the longitudinal direction of the fourth dielectric layer, the central position is an upper layer structure 81 of the orthogonal mode converter, four output ports of the upper layer structure are respectively connected with input ports of the four power dividers, a cross gap 71 and a substrate integrated waveguide microstrip-to-microstrip structure 73 are etched on a fifth metal layer, a fifth dielectric layer is provided with a substrate integrated waveguide 72 and a lower layer structure 82 of the orthogonal mode converter, the lower layer structure is provided with two input ports, signal transmission between the upper layer structure and the lower layer structure of the orthogonal mode converter is realized through the cross gap 71 on the fifth metal layer, and a sixth metal layer is a floor layer.

In this embodiment, as shown in fig. 4, the antenna radiation aperture on the first metal layer is formed by an antenna subarray array, each antenna subarray 32 is formed by four antenna units 33, each antenna unit is formed by a cylindrical metalized cavity 332 and a patch unit 331, which are located on the first dielectric layer, and the cylindrical metalized cavity can suppress surface waves and generate new resonant frequencies, as shown in fig. 5, each antenna unit has four ports, i.e., an upper port, a lower port, a left port, a right port, and a left port, and is connected to the adjacent antenna unit. The antenna unit is a microstrip antenna unit. A small short slot is cut around each antenna element to adjust the antenna operating frequency.

As shown in fig. 6, each cross slot 42 in the cross slot array on the second metal layer has the same number and opposite position as the excited antenna unit, the metallized through hole in the second dielectric layer is formed by an array of square cavities 41 having the same number and opposite position as the antenna subarray on the first metal layer, and every four cross slots on the second metal layer share one square cavity.

All the square cavities in the second dielectric layer have the same size and the mode is TE₄₁₀And TE₁₄₀And the space between the square cavities is twice of the space between the cross-shaped gaps on the second metal layer.

As shown in fig. 7, the metallized via structure in the third dielectric layer includes a plurality of transverse substrate integrated waveguides 51 and longitudinal substrate integrated waveguides 52, each cross coupling slot 54 on the third metal layer is respectively located at the central position of each intersection of the transverse substrate integrated waveguides and the longitudinal substrate integrated waveguides, and a metallized via 53 is further respectively disposed around each intersection of the transverse substrate integrated waveguides and the longitudinal substrate integrated waveguides, so that the intersection forms TE₂₁₀And TE₁₂₀A metal cavity is patterned, thereby improving port isolation.

As shown in fig. 8 and 12, in the array of transverse slit structures on the fourth metal layer, two transverse slits 63 and 64 are grouped. The double-gap structure is beneficial to impedance matching adjustment and wide working bandwidth realization.

A cross slit etched in the fifth metal layer below the TE of the orthogonal mode converter₁₂₀And TE₂₁₀Center of mode cavity, orthogonal mode transducer lower layer TE₁₂₀And TE₂₁₀The center of the mode cavity is a semi-open cavity, two adjacent edges are provided with excitation windows, and the two excitation windows are respectively connected with one input port. Orthogonal modeThe dual-polarized antenna is excited differentially by the transformer, so that high cross polarization discrimination is obtained.

The dielectric plates of all the dielectric layers are Rogers RO4003C, the dielectric constant is 3.55, the loss tangent is 0.0027, and the thickness is 0.813 mm; all metal layers were 1 ounce thick, and the cross-sectional height of the entire antenna was 0.27 free-space wavelengths.

The diameter of the cylindrical metalized cavity on the first dielectric layer is 6 mm; the length of the cross gap on the second metal layer is 2.7mm, and the width of the cross gap on the second metal layer is 0.3 mm; the square cavity in the second dielectric layer is a substrate integrated waveguide square cavity with the size of 16mm multiplied by 16 mm; the length of the cross coupling gap on the third metal layer is 2.3mm, and the width of the cross coupling gap on the third metal layer is 0.3 mm; the width of the transverse substrate integrated waveguide and the width of the longitudinal substrate integrated waveguide in the third dielectric layer are 6.4mm, the diameter of the metalized through hole at the periphery of each intersection of the transverse substrate integrated waveguide and the longitudinal substrate integrated waveguide in the third dielectric layer is 0.3mm, and the diameter is 3.5mm relative to the center of the intersection; the length of the transverse gap on the fourth metal layer is 3.3mm, the width of the transverse gap on the fourth metal layer is 0.3mm, and the distance between two transverse gaps in the same group is 2.2 mm.

Taking an array antenna containing 8 multiplied by 8 antenna units as an example, the center frequency of the array antenna is designed to be 20GHz, full-wave electromagnetic simulation is carried out on the array antenna in HFSS, and a simulation result shows that the isolation between two ports is more than 30dB in the whole frequency bandwidth range, the cross polarization discrimination rate is 58dB, the working bandwidth is 19.2-20.5GHz, and the gain value in the range is 10.8-12.2 dBi. The simulation result after the feed network is added shows that the impedance bandwidth of the antenna array is 19.2-20.7 GHz, the peak gain is 22.8dBi, the gain of the whole working bandwidth is larger than 22.2dBi, and the cross polarization discrimination is larger than 43 dB.

In conclusion, the invention discloses a microwave millimeter wave dual-polarization planar array antenna which is simple in structure, high in cross polarization discrimination, high in caliber efficiency, low in section, easy to process and low in cost. The dual-polarized array antenna adopts novel substrate integrated waveguide cross-coupled antenna units, and the whole antenna array can be excited differentially from the periphery to obtain high cross polarization discrimination. Due to the presence of the cross-coupling structure, signals in the horizontal and vertical feed networks can be transmitted independently without crosstalk. The antenna unit adopts a 2 x 2 sub-array design. To extend the operating bandwidth, three resonances are excited per subarray. The invention is suitable for the field of microwave and millimeter waves and solves the technical problems of complex dual-polarized array feed network, high cross polarization level and the like in the design of a high-frequency antenna.