High-gain direct-current boost converter
阅读说明：本技术 一种高增益直流升压变换器 (High-gain direct-current boost converter ) 是由 卢嘉豪 徐梦然 陈思哲 于 2020-12-02 设计创作，主要内容包括：本发明涉及一种高增益直流升压变换器,所述变换器的输入电源为U_(in)、负载R,所述变换器包括：开关管S_1、开关管S_2,电容C_1、电容C_2、电容C_3、电感L_1、电感L_2、二极管D_1、二极管D_2、二极管D_3、二极管D_4；本发明为克服现有技术中电压增益有限、器件电压应力大、体积较大的缺陷,在变换器器件数量不变、体积减小的情况下可实现更高的电压增益和更小的器件电压应力,满足特定场合的升压、安全和小体积要求。本发明所述高增益直流升压变换器可实现更高的电压增益,满足特定场合的升压需求；还减小了变换器器件的电压应力,直流升压变换器更加安全。(The invention relates to a high-gain direct-current boost converter, wherein an input power supply of the converter is U in A load R, the converter comprising: switch tube S 1 Switch tube S 2 Capacitor C 1 Capacitor C 2 Capacitor C 3 Inductor L 1 Inductor L 2 Diode D 1 Diode D 2 Diode D 3 Diode D 4 (ii) a The invention overcomes the defects of limited voltage gain, large device voltage stress and large volume in the prior art, can realize higher voltage gain and smaller device voltage stress under the condition of unchanged number of converter devices and reduced volume, and meets the requirements of boosting, safety and small volume in specific occasions. The high-gain direct-current boost converter can realize higher voltage gain and meet the boost requirement of a specific occasion; and the voltage stress of converter devices is also reduced, and the direct-current boost converter is safer.)
1. A high-gain DC boost converter with U input power supplyinAnd a load R, wherein the converter comprises: switch tube S1Switch tube S2Capacitor and method for manufacturing the sameC1Capacitor C2Capacitor C3Inductor L1Inductor L2Diode D1Diode D2Diode D3Diode D4；
Wherein the inductance L1First terminal and input power source UinThe positive electrode of (1) is connected; inductor L1Second terminal and switching tube S1Is connected with the drain electrode of the transistor; switch tube S1Source and input power source UinThe negative electrode of (1) is connected;
diode D3Cathode and input power UinIs connected to the cathode of a diode D3Is connected to a first end of a load R;
capacitor C1First terminal of and diode D1Is connected to the cathode, a capacitor C1Second terminal and input power source UinThe negative electrode of (1) is connected;
diode D1Anode and inductor L1Is connected with the second end of the first end;
capacitor C2First end inductor L1Is connected to the second terminal of the capacitor C2Second terminal of and diode D2The anode of (2) is connected; diode D2Cathode and input power UinThe negative electrode of (1) is connected;
switch tube S2Source and diode D2Is connected with the anode of the switching tube S2Drain electrode and capacitor C3Is connected to a first terminal of a capacitor C3Second terminal of and diode D3The anode of (2) is connected;
inductor L2First terminal of and diode D1Is connected to the cathode of the inductor L2Second terminal and switching tube S2Is connected with the drain electrode of the transistor;
diode D4Anode of (2) and diode D1Is connected to the cathode of a diode D4Is connected to a second terminal of the load R.
2. The high gain dc boost converter according to claim 1, wherein said converter further comprises a capacitor C4Said capacitor C4First terminal of and diode D4Cathode of (2), capacitor C4Second terminal of and diode D3Is connected with the anode of (2).
3. The high-gain DC boost converter according to claim 2, wherein said switch tube S1And a switching tube S2While being turned on or off.
4. A high gain dc boost converter according to any of claims 2-3, wherein said inductor L1And an inductance L2Are equal.
5. The high-gain DC boost converter according to claim 4, wherein the inductor L1Inductor L2Is a patch type power inductor.
6. The high gain DC boost converter according to claim 4, wherein said capacitor C1Capacitor C2Capacitor C3And a capacitor C4Are equal.
7. The high gain DC boost converter according to claim 6, wherein the capacitor C1Capacitor C2Capacitor C3Capacitor C4Is an aluminum electrolytic capacitor.
8. The high-gain DC boost converter according to any of claims 5-7, wherein said switch tube S1Switch tube S2Is an N-channel MOSFET.
9. The high gain dc boost converter according to claim 8, wherein diode D1Diode D2Diode D3Diode D4Is a patch type diode.
10. The high gain dc boost converter according to claim 9, wherein said MOSFET is of the type IRF 540.
Technical Field
The invention relates to the technical field of power electronic converters, in particular to a high-gain direct-current boost converter.
Background
The dc boost converter is a power electronic converter that converts a dc power with a relatively low voltage into a dc power with a relatively high voltage, and is widely applied to the fields of photovoltaic energy storage boost grid connection, motor driving, electric vehicles, consumer electronics, power amplifiers, and the like. However, dc boost converters are limited in voltage stress, number and volume of converter devices, and have limited voltage gain. In the face of higher and higher boost and small volume requirements for applications, it has become increasingly urgent to research high-gain dc boost converters with higher gain and smaller volume.
Referring to fig. 1, fig. 1 is a schematic circuit diagram of a dc boost converter of the prior art, including an input power source UinTwo switching tubes S1、S2Four capacitors C1、C2、C3、C4Three inductors L1、L2、L3Three diodes D1、D2、D3And a load R, the voltage gain of the DC boost converter is 3/(1-D), wherein D is the duty ratio. The voltage gain of the dc boost converter is limited.
Disclosure of Invention
The invention provides a high-gain direct-current boost converter to overcome the defect that the voltage gain of the direct-current boost converter in the prior art is limited.
The input power supply of the converter is UinThe load is R, the converter comprises: switch tube S1Switch tube S2Capacitor C1Capacitor C2Capacitor C3Inductor L1Inductor L2Diode D1Diode D2Diode D3Diode D4；
Wherein the inductance L1First terminal and input power source UinThe positive electrode of (1) is connected; inductor L1Second terminal and switching tube S1Is connected with the drain electrode of the transistor; switch tube S1Source and input power source UinThe negative electrode of (1) is connected;
diode D3Cathode and input power UinIs connected to the cathode of a diode D3Is connected to a first end of a load R;
capacitor C1First terminal of and diode D1Is connected to the cathode, a capacitor C1Second terminal and input power source UinThe negative electrode of (1) is connected;
diode D1Anode and inductor L1Is connected with the second end of the first end;
capacitor C2First end inductor L1Is connected to the second terminal of the capacitor C2Second terminal of and diode D2The anode of (2) is connected; diode D2Cathode and input power UinThe negative electrode of (1) is connected;
switch tube S2Source and diode D2Is connected with the anode of the switching tube S2Drain electrode and capacitor C3Is connected to a first terminal of a capacitor C3Second terminal of and diode D3The anode of (2) is connected;
inductor L2First terminal of and diode D1Is connected to the cathode of the inductor L2Second terminal and switching tube S2Is connected with the drain electrode of the transistor;
diode D4Anode of (2) and diode D1Is connected to the cathode of a diode D4Is connected to a second terminal of the load R.
Preferably, the converter further comprises a capacitor C4Said capacitor C4First terminal of and diode D4Cathode of (2), capacitor C4Second terminal of and diode D3Is connected with the anode of (2).
Preferably, the switching tube S1And a switching tube S2While being turned on or off.
Preferably, the inductance L1And an inductance L2Are equal.
Preferably, the capacitance C1Capacitor C2Capacitor C3And a capacitor C4Are equal.
Preferably, the switching tube S1Switch tube S2Is an N-channel MOSFET.
Preferably, the capacitance C1Capacitor C2Capacitor C3Capacitor C4Is an aluminum electrolytic capacitor.
Preferably, the inductance L1Inductor L2Is a patch type power inductor.
Preferably, a diode D1Diode D2Diode D3Diode D4Is a patch type diode.
Preferably, the model of the MOSFET is IRF 540.
Compared with the prior art, the technical scheme of the invention has the beneficial effects that: the high-gain direct-current boost converter can realize higher voltage gain and meet the boost requirement of a specific occasion; and the voltage stress of converter devices is also reduced, and the direct-current boost converter is safer.
Drawings
Fig. 1 is a schematic circuit diagram of a dc boost converter according to the prior art.
Fig. 2 is a schematic circuit diagram of the high-gain dc boost converter according to embodiment 1.
Fig. 3 is a schematic circuit diagram of the high-gain dc boost converter according to embodiment 1 in the operating mode 1.
Fig. 4 is a schematic circuit diagram of the high-gain dc boost converter according to embodiment 1 in the operating mode 2.
Fig. 5 is a graph comparing the voltage gain of two dc boost converters provided in prior art and example 1.
Fig. 6 is an experimental waveform diagram of the high-gain dc boost converter described in embodiment 1.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent;
for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product;
it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
Example 1:
this embodiment provides a high-gain DC boost converter, as shown in FIG. 2, with an input power UinThe load is R;
the converter comprises two switching tubes: switch tube S1Switch tube S2Four capacitors: capacitor C1Capacitor C2Capacitor C3Capacitor C4Two inductors: inductor L1Inductor L2Four diodes: diode D1Diode D2Diode D3Diode D4。
Input power supply UinPositive electrode and inductor L1Is connected with the first end of the first connecting pipe;
input power supply UinNegative electrode of (1) and capacitor C1Is connected with the second end of the switch tube S, and the common end of the switch tube S is connected with the common end of the switch tube S1Source electrode of (2), diode D2Cathode of (2), diode D3The cathode of (a) is connected;
inductor L1Second terminal and switching tube S1Is connected with the common terminal of the diode D1Anode and capacitor C2Is connected with the first end of the first connecting pipe;
capacitor C2Second terminal of and diode D2Is connected with the anode of the switching tube S at the common end2Is connected to the source of (a);
switch tube S2Drain electrode and capacitor C3Is connected with the first terminal of the inductor L, and the common terminal of the inductor L is connected with the second terminal of the inductor L2Is connected with the second end of the first end;
capacitor C1First terminal of and diode D1The common terminal of which is connected to the inductor L2First terminal of (1), diode D4The anode of (2) is connected;
diode D4Cathode and capacitor C4A common terminal of which is connected to a first terminal of a load R;
diode D3Anode and capacitor C3Is connected with the second terminal of the capacitor C, and the common terminal of the capacitor C is connected with the common terminal of the capacitor C4Is connected to the second end of the load R;
inductor L1And an inductance L2The inductance values of (a) are equal;
capacitor C1Capacitor C2Capacitor C3And a capacitor C4Are equal;
switch tube S in this embodiment1Switch tube S2N-channel MOSFET and capacitor C are selected1Capacitor C2Capacitor C3Capacitor C4Selecting an aluminum electrolytic capacitor and an inductor L1Inductor L2Selecting paster type power inductor, diode D1Diode D2Diode D3Diode D4And selecting a patch type diode.
The operation principle of the high-gain dc boost converter according to the present embodiment will be described in detail below.
Referring to fig. 3 and 4, fig. 3 is a schematic circuit diagram of the converter of the present embodiment in an operating mode 1, fig. 4 is a schematic circuit diagram of the converter of the present embodiment in an operating mode 2, in which a dark solid line indicates a portion of the converter through which current flows, a light solid line indicates a portion of the converter through which no current flows, and a solid line with arrows indicates a path of the converter for charging an inductor and a capacitor and supplying power to a load.
Fig. 3 and 4 show 2 operation modes of the high-gain dc boost converter provided in this embodiment in one switching cycle.
Wherein: the working mode 1 is a switching tube S1And a switching tube S2Conducting at the same time, wherein the conducting time is DT; working mode 2 is a switching tube S1And a switching tube S2And simultaneously turning off for (1-D) T. Wherein D is the duty cycle and T is the switching period.
Referring to fig. 3, fig. 3 is a schematic circuit diagram of the converter according to the present embodiment in the operating mode 1. Switch tube S1And a switching tube S2Are simultaneously conducted, diode D1Diode D2Diode D3Turn-off, diode D4And conducting. Input power supply UinThrough Uin→L1→S1Is directed to the inductor L1Charging, inductance L1The current of (2) increases linearly. Simultaneous capacitor C1And a capacitor C2Through C1→L2→S2→C2→S1Road ofRadial inductance L2Charging, inductance L2The current of (2) increases linearly.
Capacitor C1Capacitor C2And a capacitor C3Through C1→D4→R→C3→S2→C2→S1To a load R, a capacitor C4The load R is supplied with power alone.
In the working mode 1, an equation is written for each current loop according to Kirchhoff Voltage Law (KVL)
UL1＝Uin(1)
UL2＝UC1+UC2 (2)
Uout＝UC1+UC2+UC3 (3)
Wherein, UinFor inputting the voltage of the power supply, UoutTo output a voltage, UL1、UL2Are respectively an inductance L1And an inductance L2Voltage of UC1、UC2、UC3Are respectively a capacitor C1Capacitor C2And a capacitor C3The voltage of (c).
And (3) working mode 2:
referring to fig. 4, fig. 4 is a schematic circuit diagram of the converter according to the present embodiment in the operating mode 2. Switch tube S1And a switching tube S2Simultaneously turn off, diode D1Diode D2Diode D3Conducting, diode D4And (6) turning off. Input power supply UinThrough Uin→L1→D1→C1Is directed to a capacitor C1Charging and input power supply UinAnd an inductance L1Through Uin→L1→C2→D2Is directed to a capacitor C2Charging and input power supply UinThrough Uin→L1→D1→L2→C3→D3Is directed to a capacitor C3And (6) charging.
In the working mode 2, an equation is written for each current loop according to Kirchhoff Voltage Law (KVL)
UL1＝Uin-UC2(4)
UC1＝UC2 (5)
UL2＝UC2-UC3 (6)
In a switching period T, the time of the working mode 1 is DT, and the time of the working mode 2 is (1-D) T.
To the inductance L1From the volt-second equilibrium principle, we can obtain:
DUin+(1-D)(Uin-UC2)＝0 (7)
to the inductance L2From the volt-second equilibrium principle, we can obtain:
D(UC1+UC2)+(1-D)(UC2-UC3)＝0 (8)
the voltage gain obtained by the joint type (3), the formula (5), the formula (7) and the formula (8) is as follows:
where G is the voltage gain.
The voltage stress of each device of the converter in the embodiment is as follows:
capacitor C1And a capacitor C2Voltage stress U ofC1、UC2Can be obtained from formula (5), formula (7) and formula (9)
Capacitor C3Voltage stress U ofC3Can be obtained from the formulas (3) and (10)
Diode D1And a diode D2Voltage stress U ofD1、UD2And a capacitor C1And a capacitor C2Is the same as that of
Diode D3Voltage stress U ofD3Can be expressed as
Diode D4Voltage stress U ofD4Can be expressed as
Switch tube S1Voltage stress U ofS1Can be expressed as
Switch tube S2Voltage stress U ofS2Can be expressed as
The following compares the voltage gain of the converter described in the prior art with that of the converter described in this embodiment to the dc boost converter:
referring to fig. 5, fig. 5 is a comparison of voltage gains of two dc boost converters provided by the prior art and the present invention. It can be seen from fig. 5 that the voltage gain of the converter described in this embodiment is significantly higher than that of the converter described in the prior art for the same duty cycle.
In order to verify the feasibility and the effectiveness of the high-gain direct-current boost converter provided by the invention, an experimental prototype with the input voltage of 10V and the output voltage of 100V is set up for experimental verification. The main circuit parameters of the high-gain direct-current boost converter are as follows: capacitor with a capacitor elementC1＝C2＝C3＝C4470 muf, inductance L1＝L2220 muh, diode model SR5100, MOSFET model IRF540, switching frequency fs50kHz, duty ratio D0.5, input voltage Uin10V, the load resistance R is 500 Ω.
Referring to fig. 6, fig. 6 shows experimental waveforms of the high-gain dc boost converter according to the present invention, in which the output voltage is 97.9V, which substantially matches the theoretical value of 100V, and the inductance L1And an inductance L2The current of the switch tube linearly rises during the conduction period of the switch tube and linearly falls during the turn-off period of the switch tube, which is consistent with theoretical analysis. Experimental results show that the high-gain direct-current boost converter provided by the invention has an effective boost function.
The embodiment can realize higher voltage gain and meet the boosting requirement of a specific occasion; meanwhile, the voltage stress of the converter device is reduced, and the direct-current boost converter is safer; compared with the direct current boost converter in the prior art, the high-gain direct current boost converter provided by the embodiment has the advantages that one diode is added, one inductor is reduced, and the size of the converter can be reduced.
The terms describing positional relationships in the drawings are for illustrative purposes only and are not to be construed as limiting the patent;
it should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
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