阅读说明：本技术 电子装置 (Electronic device ) 是由 崔斗硕 金荣敏 李齐营 尹大荣 李宣旴 于 2020-08-07 设计创作，主要内容包括：公开了一种电子装置。所述电子装置包括：调制解调器,被配置为处理基带信号；中频(IF)收发器,被配置为将从调制解调器提供的基带信号转换为IF频带信号；和射频(RF)收发器,被配置为将从IF收发器提供的IF频带信号转换为RF频带信号,其中,RF收发器包括功率放大器和温度传感器单元,功率放大器被配置为放大RF频带信号,温度传感器单元用于检测功率放大器的温度,并且其中,调制解调器包括控制器,控制器被配置为基于由温度传感器单元检测的功率放大器的温度来控制输入到RF收发器的输入功率。(An electronic device is disclosed. The electronic device includes: a modem configured to process a baseband signal; an Intermediate Frequency (IF) transceiver configured to convert a baseband signal provided from the modem into an IF band signal; and a Radio Frequency (RF) transceiver configured to convert an IF band signal provided from the IF transceiver into an RF band signal, wherein the RF transceiver includes a power amplifier configured to amplify the RF band signal and a temperature sensor unit for detecting a temperature of the power amplifier, and wherein the modem includes a controller configured to control an input power input to the RF transceiver based on the temperature of the power amplifier detected by the temperature sensor unit.)

1. An electronic device, comprising:

a modem configured to process a baseband signal;

a medium frequency transceiver configured to: converting a baseband signal provided from a modem into an intermediate frequency band signal; and

a radio frequency transceiver configured to: converts an if band signal provided from the if transceiver into an rf band signal,

wherein the radio frequency transceiver includes a power amplifier configured to amplify a radio frequency band signal and a temperature sensor unit for detecting a temperature of the power amplifier, and

wherein the modem includes a controller configured to: the input power to the radio frequency transceiver is controlled based on the temperature of the power amplifier detected by the temperature sensor unit.

2. The electronic device of claim 1, wherein the modem further comprises a memory storing a lookup table including the first temperature of the power amplifier and a gain drop of the radio frequency transceiver corresponding to the first temperature of the power amplifier.

3. The electronic device of claim 1, wherein the controller increases the power of the if band signal when a gain of the rf transceiver corresponding to the temperature of the power amplifier detected by the temperature sensor unit drops by more than a first set value.

4. The electronic device of claim 1, wherein the controller increases the power of the baseband signal when a gain of the radio frequency transceiver corresponding to the temperature of the power amplifier detected by the temperature sensor unit drops by more than a first set value.

5. The electronic device of claim 1, wherein the radio frequency transceiver further comprises a power detector for detecting an output power of the amplified radio frequency band signal, and

wherein the controller calculates a power difference between the target power and the output power detected by the power detector to control the input power to the radio frequency transceiver.

6. The electronic device according to claim 5, wherein the controller determines whether the power difference is within the set value range based on a gain drop of the radio frequency transceiver corresponding to the temperature of the power amplifier detected by the temperature sensor unit.

7. The electronic device according to claim 6, wherein the controller controls the input power to the radio frequency transceiver based on the power difference when the power difference is within the set value range.

8. The electronic device according to claim 6, wherein the controller controls the input power to the radio frequency transceiver based on a gain drop of the radio frequency transceiver when the power difference is not within the set value range.

9. The electronic device of any one of claims 1-4, wherein the power amplifier comprises a first power amplifier and a second power amplifier,

wherein the temperature sensor unit is connected to the first power amplifier to detect a first temperature of the first power amplifier,

wherein the radio frequency transceiver further comprises a power detector connected to the second power amplifier for detecting an output power of the amplified radio frequency band signal, and

wherein the controller controls the input power to the radio frequency transceiver based on a first temperature of the first power amplifier detected by the temperature sensor unit or a result of calculating a power difference between the target power and the output power detected by the power detector.

10. The electronic device of claim 9, wherein the radio frequency transceiver includes a first radio frequency transceiver including a first power amplifier and a second radio frequency transceiver including a second power amplifier, and

wherein the controller includes a first controller configured to control an input power to the first radio frequency transceiver based on a first temperature of the first power amplifier, and a second controller configured to control an input power to the second radio frequency transceiver based on an output power of the amplified radio frequency band signal.

11. An electronic device, comprising:

a modem configured to process a baseband signal;

a medium frequency transceiver configured to: converting a baseband signal provided from a modem into an intermediate frequency band signal; and

a radio frequency transceiver configured to: converts an if band signal provided from the if transceiver into an rf band signal,

wherein the radio frequency transceiver comprises a power amplifier configured to amplify a radio frequency band signal and a power detector for detecting an output power of the amplified radio frequency band signal, and

wherein the modem includes a controller configured to: the input power to the radio frequency transceiver is controlled based on the output power of the radio frequency band signal detected by the power detector.

12. The electronic device of claim 11, wherein the controller calculates a difference between the target power and an output power of the radio frequency band signal detected by the power detector, and

when the difference between the target power and the output power is greater than a set value, the controller increases the input power input to the radio frequency transceiver by the difference between the target power and the output power.

13. The electronic device of claim 11, wherein the controller calculates a difference between the target power and an output power of the radio frequency band signal detected by the power detector, and

the controller increases the power of the baseband signal when a difference between the target power and the output power is greater than a set value.

14. The electronic device of claim 11, wherein multiple paths are provided between the modem and the intermediate frequency transceiver, and

wherein the controller calculates a difference between the target power and an output power of the radio frequency band signal detected by the power detector, and selects one of the plurality of paths based on the difference between the target power and the output power.

15. The electronic device of claim 14, wherein the radio frequency transceiver includes a temperature sensor unit connected to the power amplifier to detect a temperature of the power amplifier, and

wherein the controller selects one of the plurality of paths based on a temperature of the power amplifier detected by the temperature sensor unit or an output power of the radio frequency band signal detected by the power detector.

16. The electronic device of claim 11, wherein multiple paths are provided between the intermediate frequency transceiver and the radio frequency transceiver, and

wherein the controller calculates a difference between the target power and an output power of the radio frequency band signal detected by the power detector, and selects one of the plurality of paths based on the difference between the target power and the output power.

17. The electronic device of claim 16, wherein the radio frequency transceiver includes a temperature sensor unit connected to the power amplifier to detect a temperature of the power amplifier, and

wherein the controller selects one of the plurality of paths based on a temperature of the power amplifier detected by the temperature sensor unit or an output power of the radio frequency band signal detected by the power detector.

18. The electronic device of any one of claims 11-13, wherein the radio frequency transceiver includes a temperature sensor unit connected to the power amplifier to detect a temperature of the power amplifier,

wherein the modem further comprises a memory storing a look-up table including temperatures of the power amplifier and gain drops of the radio frequency transceiver respectively corresponding to the temperatures of the power amplifier, and

wherein the controller receives the temperature of the power amplifier detected by the temperature sensor unit and receives a gain drop of the radio frequency transceiver corresponding to the temperature of the power amplifier detected by the temperature sensor unit from the lookup table, and controls the input power to the radio frequency transceiver according to the received gain drop.

19. An electronic device, comprising:

a modem configured to process a baseband signal;

a medium frequency transceiver configured to: up-converting a baseband signal output from the modem and outputting an intermediate frequency band signal; and

a radio frequency transceiver configured to: up-converts the if band signal output from the if transceiver, and outputs a rf band signal,

wherein the radio frequency transceiver includes a power amplifier configured to amplify a radio frequency band signal, a temperature sensor unit connected to the power amplifier to detect a temperature of the power amplifier, and a power detector connected to the power amplifier to detect an output power of the amplified radio frequency band signal, and

wherein the modem comprises a controller and a memory, the controller configured to: the memory stores a look-up table including temperatures of the power amplifiers and gain drops of the radio transceivers corresponding to the temperatures of the power amplifiers, respectively, based on the temperatures of the power amplifiers detected by the temperature sensor units or output powers detected by the power detectors.

20. The electronic device of claim 19, wherein the first path is disposed between the modem and the intermediate-frequency transceiver,

wherein the second path is provided between the intermediate frequency transceiver and the radio frequency transceiver, and

wherein the controller selects the first path or the second path based on the output power detected by the power detector.

Technical Field

The present inventive concept relates to an electronic device.

Background

In order to meet the increasing demand for wireless data traffic after the commercialization of the fourth generation (4G) communication system, efforts have been made to develop a fifth generation (5G) communication system or a pre-5G communication system. The 5G communication system or the pre-5G communication system may be referred to as a beyond 4G network (beyond 4G network) communication system or a post long term evolution (post LTE) system. In order to achieve a high data transfer rate, a 5G communication system is implemented in an ultra high frequency millimeter wave (mmWave) band (e.g., 60GHz band).

In the ultra high frequency band, high channel loss may occur due to frequency characteristics. Accordingly, a Radio Frequency Integrated Circuit (RFIC) generating high output power is employed to secure a stable communication distance, and an antenna having high gain is additionally employed to compensate for the high output power of the RFIC.

In the high gain antenna, since a beam having a physically narrow width is formed, a beam forming technique is employed to secure a wide communication area. In addition, a plurality of phase shifters and transceivers are provided in the RFIC to drive the antenna. In this case, the heat generated by using a plurality of power amplifiers in the high frequency band may affect the performance of the 5G communication system.

Disclosure of Invention

According to an exemplary embodiment of the inventive concept, there is provided an electronic apparatus including: a modem configured to process a baseband signal; an Intermediate Frequency (IF) transceiver configured to convert a baseband signal provided from the modem into an IF band signal; and a Radio Frequency (RF) transceiver configured to convert an IF band signal provided from the IF transceiver into an RF band signal, wherein the RF transceiver includes: a power amplifier configured to amplify an RF band signal and a temperature sensor unit for detecting a temperature of the power amplifier, and wherein the modem comprises: a controller configured to control input power to the RF transceiver based on the temperature of the power amplifier detected by the temperature sensor unit.

According to an exemplary embodiment of the inventive concept, there is provided an electronic apparatus including: a modem configured to process a baseband signal; an IF transceiver configured to convert a baseband signal provided from the modem into an IF band signal; and an RF transceiver configured to convert the IF band signal provided from the IF transceiver into an RF band signal, wherein the RF transceiver includes: a power amplifier configured to amplify an RF band signal and a power detector for detecting an output power of the amplified RF band signal, and wherein the modem comprises: a controller configured to control an input power to the RF transceiver based on an output power of the RF band signal detected by the power detector.

According to an exemplary embodiment of the inventive concept, there is provided an electronic apparatus including: a modem configured to process a baseband signal; an IF transceiver configured to up-convert a baseband signal output from the modem and output an IF band signal; and an RF transceiver configured to up-convert the IF band signal output from the IF transceiver and output an RF band signal, wherein the RF transceiver includes: a power amplifier configured to amplify an RF band signal, a temperature sensor unit connected to the power amplifier to detect a temperature of the power amplifier, and a power detector connected to the power amplifier to detect an output power of the amplified RF band signal, and wherein the modem includes a controller configured to control an input power input to the RF transceiver based on the temperature of the power amplifier detected by the temperature sensor unit or the output power detected by the power detector, and a memory storing a lookup table including the temperature of the power amplifier and a gain drop of the RF transceiver corresponding to the temperature of the power amplifier, respectively.

Drawings

The above and other features of the present inventive concept will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings, in which:

fig. 1 is a system diagram of an electronic device according to an exemplary embodiment of the inventive concept.

Fig. 2 is a block diagram of an Intermediate Frequency (IF) transceiver of the electronic device of fig. 1.

Fig. 3 is a block diagram of a Radio Frequency (RF) transceiver of the electronic device of fig. 1.

Fig. 4 is a block diagram of an electronic device according to an exemplary embodiment of the inventive concept.

Fig. 5 is a graph illustrating an Equivalent Isotropic Radiated Power (EIRP) of an electronic device according to a gain value of an RF transceiver.

Fig. 6 is a graph illustrating a temperature of a power amplifier included in the RF transceiver according to a gain value of the RF transceiver of fig. 5.

Fig. 7 illustrates a lookup table included in a memory of a modem of an electronic device according to an exemplary embodiment of the inventive concept.

Fig. 8 is a flowchart illustrating an operation of an electronic device according to an exemplary embodiment of the inventive concept.

Fig. 9 is a block diagram of an electronic device according to other exemplary embodiments of the inventive concept.

Fig. 10 is a graph showing output power detected by a power detector connected to a power amplifier and an EIRP value radiated from an actual antenna module.

Fig. 11 is a flowchart illustrating an operation of an electronic device according to an exemplary embodiment of the inventive concept.

Fig. 12 is a block diagram of an electronic device according to other exemplary embodiments of the inventive concept.

Fig. 13 is a flowchart illustrating an operation of an electronic device according to other exemplary embodiments of the inventive concept.

Fig. 14 is a block diagram of an electronic device according to other exemplary embodiments of the inventive concept.

Fig. 15 is a flowchart illustrating an operation of an electronic device according to an exemplary embodiment of the inventive concept.

Fig. 16 is a block diagram of an electronic device according to other exemplary embodiments of the inventive concept.

Fig. 17a is a graph illustrating an Equivalent Isotropic Radiated Power (EIRP) of an electronic device according to an exemplary embodiment of the inventive concept.

Fig. 17b is a graph illustrating an output power P of an electronic device according to an exemplary embodiment of the inventive concept_dcA graph of (a).

Detailed Description

Fig. 1 is a system diagram of an electronic device according to an exemplary embodiment of the inventive concept.

Referring to fig. 1, an electronic device according to an exemplary embodiment of the inventive concept may include a modem 100, an Intermediate Frequency (IF) transceiver 200, and a Radio Frequency (RF) module 300.

The modem 100 may process baseband signals. IF transceiver 200 may convert baseband signal BB received from modem 100 to IF band signal IF.

The RF module 300 may include an RF transceiver 400 and an antenna module 500.

RF transceiver 400 may convert IF band signals IF received from IF transceiver 200 to RF band signals RF.

The antenna module 500 may be connected to the RF transceiver 400 to receive or transmit RF band signals RF. The antenna module 500 may include a plurality of antennas 510 and 520. Although two antennas 510 and 520 are illustrated in fig. 1, the inventive concept is not limited thereto and the electronic device may include more than two antennas. The electronic device may transmit and/or receive signals in the ultra-high frequency millimeter wave (mmWave) band through the antennas 510 and 520.

Fig. 2 is a block diagram of IF transceiver 200 of the electronic device of fig. 1.

Referring to fig. 2, the IF transceiver 200 may include a Low Pass Filter (LPF)220, a mixer 240, and a power amplifier 260.

The low pass filter 220 may filter the frequency of the baseband signal BB provided from the modem 100. The mixer 240 may up-convert the frequency filtered by the low pass filter 220 into an IF band signal. The power amplifier 260 may output the amplified IF band signal IF.

Fig. 3 is a block diagram of RF transceiver 400 of the electronic device of fig. 1.

Referring to fig. 3, the RF transceiver 400 may include a mixer 420, a switch 440, a phase shifter 460, and a power amplifier 480.

The mixer 420 may up-convert the IF band signal IF into an RF band signal. The transmission/reception mode of the electronic device may be selected according to the switch 440. The phase shifter 460 may convert the phase of the RF band signal output from the mixer 420 into a set phase. The power amplifier 480 may amplify the RF band signal received from the phase shifter 460 and output the amplified RF band signal RF.

A Temperature Sensor Unit (TSU)482 and a Power Detector (PD)484 may be connected to the power amplifier 480. These components will be described with reference to fig. 4.

Fig. 4 is a block diagram of an electronic device according to an exemplary embodiment of the inventive concept.

Referring to fig. 4, the RF transceiver 400 may include a power amplifier 480 and a temperature sensor unit 482. For simplicity of description, although only the power amplifier 480 is shown in the RF transceiver 400 of fig. 4, it will be understood that the RF transceiver 400 of fig. 4 may include the same configuration as the RF transceiver 400 of fig. 3.

The temperature sensor unit 482 may be connected to the power amplifier 480. The temperature sensor unit 482 may detect the temperature of the power amplifier 480. Temperature T of power amplifier 480 detected by temperature sensor unit 482_PAMay be provided to the controller 120 of the modem 100. The temperature sensor unit 482 may include circuitry for sensing temperature in degrees celsius.

The modem 100 may include a controller 120 and a memory 140.

The memory 140 may store a look-up table including the temperature of the power amplifier 480 and the gain drop of the RF transceiver 400 corresponding to the temperature of the power amplifier 480. In other words, the amount of gain that is reduced according to a specific temperature is stored in the memory 140. Hereinafter, a description will be given of these components with reference to fig. 5 to 7.

The controller 120 may read a gain drop of the RF transceiver 400 corresponding to the temperature of the power amplifier 480 detected by the temperature sensor unit 482 from a lookup table stored in the memory 140. The controller 120 may control the input power P of the signal input to the RF transceiver 400 according to the gain drop of the RF transceiver 400_in。

The controller 120 according to an exemplary embodiment of the inventive concept may control the power P of the IF band signal IF according to, for example, a gain drop of the RF transceiver 400_IF. Alternatively, the controller 120 according to other exemplary embodiments of the inventive concept may control the power P of the baseband signal BB according to, for example, a gain drop of the RF transceiver 400_BB. Hereinafter, a description will be given of these control functions with reference to fig. 5 to 8.

Fig. 5 is a graph illustrating an Equivalent Isotropic Radiated Power (EIRP) of an electronic device according to a gain value of an RF transceiver.

In fig. 5, the X-axis represents time and the Y-axis represents Equivalent Isotropic Radiated Power (EIRP). Equivalent Isotropic Radiated Power (EIRP) may represent power radiated into the atmosphere through a plurality of antennas.

The Gain value (Gain) may represent a Gain value of the RF transceiver. The Gain value Gain _0 of the RF transceiver may represent a maximum Gain value of the RF transceiver, and the Gain value Gain _5 of the RF transceiver may represent a minimum Gain value of the RF transceiver. The RF transceiver may have a smaller Gain value when going from the Gain value Gain _0 to the Gain value Gain _ 5.

Referring to fig. 5, as time increases, an Equivalent Isotropic Radiated Power (EIRP) of the electronic device may decrease. Furthermore, as the Gain value (Gain) of the RF transceiver increases, the Equivalent Isotropic Radiated Power (EIRP) of the electronic device may decrease more significantly over time. In other words, higher gain values may drop more than lower gain values over time.

In wireless communication in the mmWave band, an antenna having a high gain and an RF transceiver generating high output power are used to ensure a sufficient communication distance. In other words, since mmWave band wireless communication uses an RF transceiver that generates high output power, the Equivalent Isotropic Radiated Power (EIRP) of an electronic device may be significantly reduced over time.

Fig. 6 is a graph illustrating a temperature of a power amplifier included in the RF transceiver according to a gain value of the RF transceiver of fig. 5.

In fig. 6, an X-axis represents time, and a Y-axis represents a temperature (PAtemp feedback) of a power amplifier included in the RF transceiver. The Gain values Gain _0 to Gain _5 of the RF transceiver are the same as the Gain values Gain _0 to Gain _5 of the RF transceiver of fig. 5.

Referring to fig. 6, as time increases, the temperature (PAtemp readback) may increase. Furthermore, as the Gain value (Gain) of the RF transceiver increases, the temperature (PAtemp feedback) of the power amplifier may increase more significantly as time increases.

Referring to fig. 5 and 6, in the electronic device, as a Gain value (Gain) of the RF transceiver increases, a temperature (PAtemp feedback) of a power amplifier included in the RF transceiver significantly increases over time. Accordingly, an Equivalent Isotropic Radiated Power (EIRP) of the electronic device may be greatly reduced. In other words, the power amplifier included in the RF transceiver may have a large temperature change in the transmission mode and the reception mode of the electronic device. In addition, an Equivalent Isotropic Radiated Power (EIRP) of the electronic device may be sensitive to a temperature (PA temp feedback) of a power amplifier included in the RF transceiver.

Therefore, referring to fig. 4, the electronic device according to the exemplary embodiment of the inventive concept detects the temperature T of the power amplifier 480 from the temperature sensor unit 482 connected to the RF transceiver 400_PAThereby controlling an Equivalent Isotropic Radiated Power (EIRP) of the electronic device. In addition, since the electronic device according to the exemplary embodiment of the inventive concept directly detects the temperature T of the power amplifier 480_PAAnd controls an Equivalent Isotropic Radiated Power (EIRP) of the electronic device, so precise control is possible.

Fig. 7 illustrates a lookup table included in a memory of an RF transceiver of an electronic device according to an exemplary embodiment of the inventive concept.

Referring to fig. 5 and 6, as the temperature (PA temp feedback) of a power amplifier included in the RF transceiver increases, it can be seen that the gain drop of the RF transceiver increases. Thus, as shown in fig. 7, the look-up table may comprise, for example, the temperature T of the power amplifier_PAAnd a gain drop of the RF transceiver corresponding to the temperature of the power amplifier. For example, at a temperature of 70 ℃, the gain drop may be 0.5dB, and at a temperature of 110 ℃, the gain drop may be 4.5 dB.

Fig. 8 is a flowchart illustrating an operation of an electronic device according to an exemplary embodiment of the inventive concept.

Referring to fig. 4, 7 and 8, an electronic device according to an exemplary embodiment of the inventive concept may be in a transmission mode (T)_XMode) is operated (operation S110).

When the transmission mode is performed, the temperature sensor unit 482 connected to the power amplifier 480 may detect the temperature of the power amplifier 480 (operation S130). The temperature of the power amplifier 480 detected by the temperature sensor unit 482 may be provided to the controller 120 of the modem 100. For example, temperature sensor unit 482 may measure temperature T_PAThe signal is provided to the modem 100.

Then, the controller 120 may read the temperature T of the power amplifier 480 detected by the temperature sensor unit 482 from the lookup table stored in the memory 140_PAThe gain of the corresponding RF transceiver 400 is lowered (operation S150). In other words, the controller 120 can identify the temperature T in the lookup table_PAThe corresponding gain of the signal decreases.

Controller 120 may then determine whether the gain drop of RF transceiver 400 is greater than a gain setting value G_th(operation S170). Gain setting value G_thMay be differently set according to the electronic device. Gain setting value G_thMay be a predetermined threshold. Gain setting value G_thFor exampleMay be 0.5dB, but is not limited thereto.

Then, if it is determined that the gain drop of the RF transceiver 400 is greater than the gain setting value G_thThe controller 120 may increase the input power P to the RF transceiver 400 by the gain reduction of the RF transceiver 400_in(to P)_in') (i.e., P_in'＝P_inThe + gain decreases) (operation S190). The controller 120 may reduce the gain of the RF transceiver 400 and input power P to the RF transceiver 400, for example, by_inInput power P obtained by addition_in' input to the RF transceiver 400.

For example, the controller 120 may increase the power P of the baseband signal BB_BBTo increase the input power P to the RF transceiver 400_in. Alternatively, for example, the controller 120 may increase the power P of the IF band signal IF_IFTo increase the input power P to the RF transceiver 400_in。

In operation S170, when the controller 120 determines that the gain of the RF transceiver 400 drops less than or equal to the gain setting value G_thWhen so, the electronic device may return to operation S130.

The electronic device according to an exemplary embodiment of the inventive concept may increase the input power P to the RF transceiver 400 according to the temperature of the power amplifier 480 by increasing the input power P to the RF transceiver 400_inTo compensate for the gain drop of the RF transceiver 400. Accordingly, the electronic device according to the exemplary embodiments of the inventive concept may increase or enlarge the Equivalent Isotropic Radiated Power (EIRP) according to the transmission mode of the electronic device. In addition, since the electronic device according to the exemplary embodiment of the inventive concept detects the temperature of the temperature-sensitive power amplifier 480 using the temperature sensor unit 482 directly connected to the power amplifier 480, the input power P is input_inIs possible.

If it is determined that the gain drop of the power amplifier 480 is greater than the power setting value P_thThen the controller 120 may increase the power P of the baseband signal BB_BBOr power P of IF band signal IF_IF. Accordingly, the controller 120 may control the input power P of the signal provided to the RF transceiver 400_inAnd control the passing dayThe line module 500 and the plurality of antennas 510 and 520 radiate power of signals.

Fig. 9 is a block diagram of an electronic device according to other exemplary embodiments of the inventive concept.

Referring to fig. 9, the RF transceiver 400 may include a power amplifier 480 and a power detector 484.

The power detector 484 may be connected to an output terminal of the power amplifier 480 to detect the output power P of the RF band signal amplified by the power amplifier 480_RF. Output power P detected by power detector 484_RFMay be provided to the controller 120. The power detector 484 may include an output power P for detecting the RF band signal amplified by the power amplifier 480_RFThe circuit of (1). For example, power detector 484 may be an RF power detector.

The controller 120 may be based on the output power P detected by the power detector 484_RFTo control the input power P of the signal provided to the RF transceiver 400_in。

For example, controller 120 may control the input power P of the signal provided to RF transceiver 400 by adjusting the baseband signal BB provided to IF transceiver 200_in. Alternatively, for example, controller 120 may control the input power P of the signal provided to RF transceiver 400 by adjusting the IF band signal IF provided to RF transceiver 400_in. Hereinafter, a description will be given of these functions with reference to fig. 10 to 11.

Fig. 10 is a graph showing output power detected by a power detector connected to a power amplifier and an EIRP value radiated from an actual antenna module.

Referring to fig. 10, the output power P of the RF band signal amplified by the power amplifier 480 detected by the power detector 484_RFSimilar to the EIRP (P) radiated from a real antenna module_OUT) The value is obtained. In other words, an increase or decrease in EIRP radiated from an actual antenna module can be predicted based on the output power detected by the power detector.

Thus, the output power P detected by the power detector 484 may be based_RFTo determine an increase or decrease in the output power of the electronic device.

Fig. 11 is a flowchart illustrating an operation of an electronic device according to an exemplary embodiment of the inventive concept.

Referring to fig. 9 and 11, an electronic device according to an exemplary embodiment of the inventive concept may be in a transmission mode (T)_XMode) is operated (operation S210).

Subsequently, when the transmission mode is performed, the power detector 484 connected to the power amplifier 480 may detect the output power P of the RF band signal amplified by the power amplifier 480_RF. Output power P detected by power detector 484_RFMay be provided to the controller 120 of the modem 100. The controller 120 can read the output power P_RF(operation S230).

Subsequently, the controller 120 may calculate the output power P_RFAnd the target power (operation S250). For example, the target power may represent the power of a signal to be output to the outside through the antenna module in the electronic device according to the exemplary embodiment of the inventive concept.

The controller 120 may determine the output power P_RFWhether the difference with the target power is greater than the power set value P_th(operation S270). Power set value P_thMay be differently set according to the electronic device. Power set value P_thMay be a predetermined threshold. Power set value P_thMay be, for example, 0.5dB, but is not limited thereto.

If the output power P is determined_RFThe difference from the target power is greater than the power set value P_thThen the controller 120 may increase the input power P to the RF transceiver 400_in(operation S290). For example, the controller 120 may input the output power P to be output_RFDifference with target power and input power P to RF transceiver 400_inInput power P obtained by addition_in' (i.e., P)_in'＝P_in+ power difference).

The controller 120 may increase the power P of, for example, the baseband signal BB_BBTo increase the input power P to the RF transceiver 400_in. Alternatively, controller 120 may increase IF band signal IF, for example, input to RF transceiver 400Input power P_IF。

Fig. 12 is a block diagram of an electronic device according to other exemplary embodiments of the inventive concept.

Referring to fig. 12, at least one first PATH1 may be formed between the modem 100 and the IF transceiver 200. At least one second PATH2 may be formed between IF transceiver 200 and RF transceiver 400. The at least one first PATH1 and/or the second PATH2 may include PATHs having different PATH losses (e.g., 5dB, 7dB, etc.). For example, the at least one first PATH1 may include a PATH with a 5dB loss and another PATH with a 7dB loss.

The controller 120 may output power P based on the amplified RF signal detected by the power detector 484_RFOne of the at least one first PATH1 and/or one of the at least one second PATH2 is selected. Hereinafter, this process is described with reference to fig. 13.

Fig. 13 is a flowchart illustrating an operation of an electronic device according to other exemplary embodiments of the inventive concept.

Referring to fig. 12 and 13, an electronic device according to an exemplary embodiment of the inventive concept may be in a transmission mode (T)_XMode) is operated (operation S310).

When the transmission mode is performed, the controller 120 may read the temperature T of the power amplifier 480 detected from the temperature sensor unit 482_PAAnd the output power P of the amplified RF signal detected from the power detector 484_RF(operation S330). Subsequently, the controller 120 may read the temperature T of the power amplifier 480 from a lookup table stored in the memory 140_PAThe corresponding gain of the RF transceiver 400 is decreased and the output power P is calculated_RFAnd the target power (operation S350). For example, the target power may represent the power of a signal to be output to the outside through the antenna module in the electronic device according to the exemplary embodiment of the inventive concept.

Subsequently, the controller 120 may determine the output power P_RFAnd the target power is the same as the gain drop of the RF transceiver 400 (operation S360).

Subsequently, if it is determined that the gain of the RF transceiver 400 is down and the output power P is high_RFIs not the same as the difference between the target powers, the controller 120 may determine the output power P based on the gain drop of the RF transceiver 400_RFWhether the difference with the target power is at the second power setting value P_th1And P_th2Within (i.e., P)_th1< Power Difference < P_th2) (operation S370). Referring to FIG. 7, for example, the second power setting P_th1And P_th2May represent a value obtained by adding the increase in gain drop of the RF transceiver 400 to the gain drop of the RF transceiver 400 in the lookup table, or subtracting the increase in gain drop of the RF transceiver 400 from the gain drop of the RF transceiver 400. In other words, when the gain drop of the RF transceiver 400 is 1dB, the second power setting value P as the lower limit_th1May be 0.5dB obtained by subtracting 0.5dB from 1dB, and the second power setting value P as an upper limit_th2May be 1.5dB obtained by adding 0.5dB to 1 dB.

Then, if the output power P is determined based on the gain drop of the RF transceiver 400_RFThe difference with the target power is at a second power setting P_th1And P_th2Based on the output power P calculated in operation S350_RFFrom the difference between the target powers, the controller 120 may select one of the at least one first PATH1 and/or one of the at least one second PATH2 (operation S390).

On the other hand, if it is determined that the gain of the RF transceiver 400 is lowered and the output power P is in operation S360_RFAnd the difference between the target powers, the controller 120 may select one of the at least one first PATH1 and/or one of the at least one second PATH2 based on the gain drop of the RF transceiver 400 (operation S395).

Also, in operation S370, if the output power P is determined based on the gain drop of the RF transceiver 400_RFThe difference with the target power is not at the second power setting value P_th1And P_th2Then the controller 120 may select at least one first path based on the gain drop of the RF transceiver 400One of the PATHs 1 and/or one of the at least one second PATH PATHs 2 (operation S395).

Accordingly, the electronic device according to the exemplary embodiment of the inventive concept may select the first PATH1 or the second PATH2 according to a strong electric field or a weak electric field. In addition, the electronic device may select the first PATH1 or the second PATH2 according to whether the electronic device affects the human body.

The electronic device according to the exemplary embodiment of the inventive concept shown and described with reference to fig. 12 and 13 detects the temperature T of the power amplifier 480 from the temperature sensor unit 482_PAThe output power P of the amplified RF signal is detected from the power detector 484_RFAnd is based on the temperature T_PAAnd the output power P_RFThe first PATH1 or the second PATH2 is selected, but the inventive concept is not limited thereto. For example, the electronic device according to an exemplary embodiment of the inventive concept may detect the temperature T of the power amplifier 480 from the temperature sensor unit 482_PAAnd is based on the temperature T_PATo select either the first PATH1 or the second PATH 2. Alternatively, the electronic device according to an exemplary embodiment of the inventive concept may detect the output power P of the amplified RF signal from the power detector 484_RFAnd based on the output power P_RFTo select either the first PATH1 or the second PATH 2.

Fig. 14 is a block diagram of an electronic device according to other exemplary embodiments of the inventive concept.

Referring to fig. 14, the RF transceiver 400 may include a power amplifier 480, a temperature sensor unit 482, and a power detector 484. Fig. 15 is a flowchart illustrating an operation of an electronic device according to an exemplary embodiment of the inventive concept.

Referring to fig. 14 and 15, an electronic device according to an exemplary embodiment of the inventive concept may be in a transmission mode (T)_XMode) is operated (operation S410).

When the transmission mode is performed, the controller 120 may receive the temperature T of the power amplifier 480 from the temperature sensor unit 482_PAAnd receives the output power P of the amplified RF band signal from the power detector 484_RF(operation ofS430)。

Subsequently, the controller 120 may read the temperature T of the power amplifier 480 from a lookup table stored in the memory 140_PAThe corresponding gain of the RF transceiver 400 is decreased and the output power P is calculated_RFAnd the target power (operation S450).

Subsequently, the controller 120 may determine the output power P_RFAnd the target power is the same as the gain drop of the RF transceiver 400 (operation S460). In other words, the controller 120 determines whether the power difference is equal to the gain drop.

Subsequently, if it is determined that the gain of the RF transceiver 400 is down and the output power P is high_RFIs not the same as the difference between the target powers, the controller 120 may determine the output power P based on the gain drop of the RF transceiver 400_RFWhether the difference with the target power is at the second power setting value P_th1And P_th2Is detected (operation S470).

Then, if the output power P is determined based on the gain drop of the RF transceiver 400_RFThe difference with the target power is at a second power setting P_th1And P_th2Then the controller 120 may input the output power P_RFDifference with target power and input power P to RF transceiver 400_inInput power P obtained by addition_in' (operation S490).

As described above with reference to FIG. 7, for example, the second power setting P_th1And P_th2May represent a value obtained by adding the increase of the gain drop of the RF transceiver 400 in the lookup table to the gain drop of the RF transceiver 400 or subtracting the increase of the gain drop of the RF transceiver 400 in the lookup table from the gain drop of the RF transceiver 400. In this case, for example, assume that the output power P_RFThe difference from the target power is 1.2dB due to the output power P_RFThe difference from the target power is between 1dB and 1.5dB, so the controller 120 can input the output power P_RFDifference with target power and input power P to RF transceiver 400_inInput power P obtained by addition_in'。

On the other hand, if it is determined that the gain of the RF transceiver 400 is lowered and the output power P is high in operation S460_RFThe same as the difference between the target powers, the controller 120 may input the target power by lowering the gain of the RF transceiver 400 and the input power P to the RF transceiver 400_inInput power P obtained by addition_in' (operation S495).

Also, in operation S470, if the output power P is determined based on the gain drop of the RF transceiver 400_RFThe difference with the target power is not at the second power setting value P_th1And P_th2Then the controller 120 may input the gain of the RF transceiver 400 by dropping and inputting the input power P to the RF transceiver 400_inInput power P obtained by addition_in' (operation S495). Referring to fig. 10, the output power P detected by the power detector 484_RFMay have a power based on actual output power P_OUTA change in (c). Therefore, if the gain based on the RF transceiver 400 is lowered, the output power P detected by the power detector 484_RFThe difference with the target power is not at the second power setting value P_th1And P_th2Within the range of (1), the output power P can be adjusted_RFAs the error caused by the variation. In other words, the input power P may be controlled according to the temperature measured by the temperature sensor unit 482_in。

Fig. 16 is a block diagram of an electronic device according to other exemplary embodiments of the inventive concept.

Referring to fig. 16, the RF transceiver 400 may include a first RF transceiver 400_1 and a second RF transceiver 400_ 2.

The first RF transceiver 400_1 may include a first power amplifier 480_1 and a temperature sensor unit 482 connected to the first power amplifier 480_ 1.

The second RF transceiver 400_2 may include a second power amplifier 480_2 and a power detector 484 connected to an output terminal of the second power amplifier 480_ 2.

The controller 120 may include a first controller 122 and a second controller 124.

The first controller 122 may be based on the first work measured by the temperature sensor unit 482Temperature T of rate amplifier 480_1_PATo control the input power P provided to the first RF transceiver 400_1_in. The first controller 122 controls the input power P provided to the first RF transceiver 400_1 in the same manner as the controller 120 shown in fig. 4 and 8_inTherefore, a detailed description thereof will be omitted.

The second controller 124 may be based on the output power P of the amplified RF band signal of the second power amplifier 480_2 measured by the power detector 484_RFTo control the input power P provided to the second RF transceiver 400_2_in. The second controller 124 controls the input power P provided to the second RF transceiver 400_2 in the same manner as the controller 120 shown in fig. 9 and 11_inTherefore, a detailed description thereof will be omitted.

Although fig. 16 illustrates the first and second controllers 122 and 124 and the first and second power amplifiers 480_1 and 480_2, more than two controllers and more than two power amplifiers may be provided in the electronic device. In addition, a single controller may be employed to control the input power P provided to the first and second RF transceivers 400_1 and 400_2_in. Further, the first and second power amplifiers 480_1 and 480_2 may be configured to include only a power detector and only a temperature sensor unit.

Fig. 17a is a graph illustrating an Equivalent Isotropic Radiated Power (EIRP) of an electronic device according to an exemplary embodiment of the inventive concept. Fig. 17b is a graph illustrating an output power P of an electronic device according to an exemplary embodiment of the inventive concept_dcA graph of (a).

Referring to fig. 17a and 17b, graphs represent a stable state in which there is no power compensation for the output power of the electronic device, a state in which the output power of the electronic device is power compensated by the bias of the power amplifier (gain compensation), and a state in which the output power of the electronic device is power compensated by the input power input to the RF transceiver (P) according to an exemplary embodiment of the inventive concept_inCompensation).

Equivalent full of electronic devices in a state where there is no power compensation (steady state)Output power P to radiated power (EIRP) and electronic device_dcMay decrease over time.

In a state (gain compensation) in which the output power of the electronic device is power-compensated by the bias of the power amplifier, a large amount of current may be consumed since this state increases the bias of the power amplifier. In other words, an additional current is used. As a result, the electronic device consumes more power, which may result in the electronic device generating more heat.

In a state (P) in which the output power of the electronic device is power-compensated by the input power to the RF transceiver_inCompensation), the Equivalent Isotropic Radiated Power (EIRP) of the electronic device and the output power P of the electronic device_dcRespectively having an equivalent isotropic radiated power (EIRP at 0 sec) and a target output power (P at 0 sec) to the target_dc) Similar values. Accordingly, the electronic device according to the exemplary embodiments of the inventive concept can match the change of the output power by the input power input to the RF transceiver. In addition, since the electronic device according to the exemplary embodiment of the inventive concept consumes relatively less power than a state of increasing the bias of the power amplifier, energy efficiency may be improved or enhanced.

Accordingly, exemplary embodiments of the inventive concept provide an electronic device that controls an input power of an RF transceiver to compensate for an output power of the RF transceiver. In addition, exemplary embodiments of the inventive concept provide an electronic device that controls an input power of an RF transceiver to reduce power consumption of the RF transceiver while maintaining an output power of the RF transceiver.

While the present inventive concept has been described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present inventive concept as set forth in the following claims.