阅读说明：本技术 红外线热能传感器 (Infrared heat energy sensor ) 是由 严振洪 吕胤嘉 于 2020-03-18 设计创作，主要内容包括：本发明提供一种红外线热能传感器,其包括堆叠的一基板、一高阻抗层、一导电层及一保护层,于导电层上更设有一引线端,其为钒金属材质,从引线端输入一输入电压,当导电层接收到一热能时,会使导电层的阻抗改变,进而使输入电压经过导电层后所输出的一输出电压改变。因此本发明的红外线热能传感器为简单的堆叠式结构,只要靠近或接触热源,红外线热能传感器便可侦测到热能。(The invention provides an infrared heat energy sensor, which comprises a substrate, a high-impedance layer, a conductive layer and a protective layer which are stacked, wherein a lead end is arranged on the conductive layer and is made of vanadium metal, an input voltage is input from the lead end, when the conductive layer receives heat energy, the impedance of the conductive layer is changed, and then an output voltage output after the input voltage passes through the conductive layer is changed. Therefore, the infrared thermal sensor of the invention is a simple stacked structure, and the infrared thermal sensor can detect the thermal energy as long as the infrared thermal sensor is close to or contacted with a heat source.)

1. An infrared thermal energy sensor, comprising:

a substrate;

a high-impedance layer arranged on the substrate;

a conductive layer disposed on the high-impedance layer; and

and the lead end is made of vanadium metal, is arranged on the conductive layer and is electrically connected with the conductive layer, an input voltage is input from the lead end, when the conductive layer receives heat energy, the impedance of the conductive layer is changed, and then an output voltage output by the input voltage after passing through the conductive layer is changed.

2. The infrared thermal energy sensor of claim 1, wherein the substrate is a silicon substrate.

3. The infrared thermal energy sensor of claim 1, wherein the conductive layer is made of vanadium oxide.

4. The infrared thermal sensor of claim 1, wherein the high-resistance layer is made of silicon nitride.

5. The infrared thermal energy sensor of claim 1, further comprising a protective layer on the conductive layer.

6. The infrared thermal energy sensor as recited in claim 5, wherein the material of the passivation layer is silicon dioxide.

7. The infrared thermal energy sensor of claim 1, wherein the conductive layer further has a ground terminal.

8. The infrared thermal energy sensor as defined in claim 1, further comprising an output terminal for transmitting the output voltage to a microprocessor for calculating the temperature of the thermal energy from the change of the resistance or the output voltage.

9. The infrared thermal energy sensor as claimed in claim 8, wherein the microprocessor stores a look-up table for finding out a corresponding temperature value according to the variation of the resistance or the output voltage.

10. The infrared thermal energy sensor of claim 1, wherein the thermal energy comprises thermal radiation energy, thermal conduction energy, and thermal convection energy.

Technical Field

The present invention relates to a heat energy detecting technology, and more particularly to an infrared heat energy sensor.

Background

Due to the increasing development of science and technology, modern people increasingly attach importance to and demand for living or working environments, and thus various detection devices aiming at environmental quality or facilitating life are continuously developed in the market.

There are various heat conduction methods, generally, the heat conduction method can be divided into three types, i.e. thermal convection, thermal radiation and heat conduction, wherein the thermal convection and the thermal radiation do not need to contact with the heat source, and the heat conduction needs to contact with the heat source; the device for detecting heat energy developed by the three heat energy conduction modes has multiple purposes, such as an induction lamp which can be used for starting illumination when a heat source is detected; a fire detector installed on the ceiling and capable of emitting warning sound or automatically spraying water when detecting a heat source; when a hand of a person approaches the heat energy sensor, the induction type faucet can automatically discharge water after detecting the temperature of the hand, and the like. How to obtain a thermal sensor with simple structure, simple process, low cost and small volume is an important issue.

Disclosure of Invention

The present invention is directed to an infrared thermal sensor, which utilizes a stacked semiconductor structure in combination with the special properties of vanadium metal to construct a sensor capable of detecting thermal energy.

Another objective of the present invention is to provide an infrared thermal sensor, which utilizes vanadium metal as a lead input voltage, and the lead end is disposed above the conductive layer, so that when external thermal energy is detected, the input voltage can be changed, thereby achieving the purpose of detecting thermal energy.

To achieve the above object, the present invention provides an infrared thermal energy sensor, including: a substrate; a high-impedance layer arranged on the substrate; a conductive layer disposed on the high-impedance layer for electrical conduction; and a lead terminal, it is vanadium metal material, locate on the conducting layer, with the electrical connection of the conducting layer, input an input voltage from the lead terminal, when the conducting layer receives a heat energy, make the impedance of the conducting layer change, and then make an output voltage that the input voltage outputs after the conducting layer change.

According to an embodiment of the present invention, the substrate is a silicon substrate.

According to an embodiment of the invention, the material of the conductive layer is vanadium oxide (VOx).

According to an embodiment of the present invention, the material of the high-resistance layer is silicon nitride (Si)₃N₄)。

According to an embodiment of the present invention, the conductive layer further includes a protective layer thereon. The protective layer is made of silicon dioxide.

According to an embodiment of the present invention, a ground terminal is further disposed on the conductive layer.

According to an embodiment of the present invention, the infrared thermal energy sensor further includes an output terminal for transmitting the output voltage to a microprocessor to calculate the temperature of the thermal energy through the change of the resistance or the output voltage.

According to the embodiment of the invention, the microprocessor is stored with a comparison table, and the corresponding temperature value can be found out according to the variation of the resistance or the output voltage.

According to an embodiment of the present invention, the thermal energy includes thermal radiation energy, thermal conduction energy and thermal convection energy.

Drawings

Fig. 1 is a schematic view of an infrared thermal energy sensor according to an embodiment of the present invention.

FIG. 2 is a flow chart of an application of the infrared thermal energy sensor of the present invention.

Description of reference numerals: 10-infrared thermal energy sensor; 12-a substrate; 14-a high-impedance layer; 16-a conductive layer; 18-a protective layer; 20-a lead terminal; 22-ground; 24-heat energy.

Detailed Description

Referring to fig. 1, a schematic diagram of an infrared thermal sensor according to the present invention is shown. The infrared thermal sensor 10 of the present invention comprises a substrate 12, a high impedance layer 14, a conductive layer 16, a protective layer 18, a lead terminal 20 and a ground terminal 22, wherein the high impedance layer 14 is disposed on the substrate 12, which has the effects of reducing leakage current and improving breakdown voltage tolerance; the conductive layer 16 is disposed on the high resistance layer 14 for conducting electricity, the passivation layer 18 is disposed above the conductive layer 16 to prevent damage caused by foreign objects directly contacting the conductive layer 16, and the heat energy 24 is close to or in contact with the passivation layer 18; the lead terminal 20 is made of vanadium metal and is disposed on the conductive layer 16, and particularly, the lead terminal 20 and the ground terminal 22 are respectively disposed on one side of the conductive layer 16 and electrically connected to the conductive layer 16.

In the embodiment of the present invention, the material of the lead terminal 20 is one of the main features, and the material may be vanadium metal (V), which is a rare metal with a high melting point, and can be used as a stabilizer and a strengthening agent in a titanium alloy, so that the titanium alloy has good ductility and plasticity. Vanadium has also been used to produce rechargeable hydrogen or vanadium redox batteries, but is liquid when applied to batteries. Around 85% of the metal vanadium is added to steel production in the form of ferrovanadium and vanadium-nitrogen alloys to improve the strength, toughness, ductility and heat resistance of the steel. The application of the invention aims at that the passivation layer of the vanadium and the vanadium oxide top layer has good molecular bonding and strength, and the capacitance effect is not easy to cause in the vanadium plating process at the high temperature of 300 ℃.

The substrate 12 may be any material, for example, the material of the hard substrate may be silicon, glass, tempered glass, sapphire glass, ceramic, or other suitable materials; the high-resistance layer 14 may be silicon nitride (Si)₃N₄) The material is characterized in that silicon nitride is a high-strength hard ceramic with certain thermal conductivity, low thermal expansion coefficient and high elastic modulus in a wide temperature range, and different from common ceramics, the silicon nitride has high fracture toughness, and the properties are combined to ensure that the silicon nitride has excellent thermal shock resistance, can bear high structural load at high temperature and has excellent wear resistance; the conductive layer 16 is made of a conductive material and has a high Temperature Coefficient (TCR), and the vanadium metal corresponding to the lead terminal 20 can obtain the best sensing effect, so the material of the conductive layer 16 is vanadium oxide (VOx) in a preferred embodiment. The protection layer 18 only serves to protect the conductive layer 16 from being damaged by direct touch, and thus the material of the protection layer is not limited to glass (e.g., alkali-free glass, soda lime glass, tempered glass, Gorilla glass, dragontail aluminosilicate glass), sapphire, HC protection Film, decoration Film (Deco Film), functional Film (AG, AS, AR, LR, etc.), plastic cover plate (PC, PMMA/PC/PMMA, etc.), and in one embodiment, the material of the protection layer 18 may be silicon dioxide. The materials of the above layers are only examples and are not limited.

Please refer to fig. 2, which is a flowchart illustrating an application of the infrared thermal sensor according to the present invention. First, as shown in step S10, an input voltage is input from the lead terminal, and further, if the infrared thermal sensor is disposed on a device, the device may include a switch, which is turned on to start inputting the input voltage to the lead terminal; next, in step S12, it is detected whether there is heat energy emitted from the heat source in a short distance, such as heat convection, heat conduction or heat radiation energy, when the conductive layer receives a heat energy, the impedance of the conductive layer is changed, and the input voltage is changed by the influence of the impedance change when passing through the conductive layer, as described in step S14, and finally, the changed input voltage is output as an output voltage in step S16.

In one embodiment, the output voltage can be transmitted to a microprocessor to calculate the temperature of the thermal energy through the variation of the resistance or the output voltage. In another embodiment, the output voltage may be transmitted to a signal converter, converted to a digital signal, and then calculated. In another embodiment, the output voltage can be further transmitted to an image processor to generate a temperature map according to the variation of the resistance or the output voltage, such as displaying red at high temperature, yellow at medium temperature, green at low temperature, etc. The infrared thermal sensor of the present invention can be applied in many other applications, and the above embodiments do not limit the application scope of the present invention, and the technology of detecting thermal energy by using the resistance and voltage variation is within the scope of the present invention.

In addition, in the embodiment of calculating the temperature of the heat energy through the variation of the resistance or the output voltage, the method of calculating the temperature further includes several methods, for example, a comparison table including the temperature value corresponding to the variation of the resistance or the voltage may be stored in the microprocessor, so that when the microprocessor receives the output voltage, the microprocessor may look up the comparison table according to the variation of the resistance or the output voltage to find the corresponding temperature value.

In summary, the infrared thermal sensor provided by the present invention utilizes a simple stacking structure to detect thermal energy, wherein the substrate, the high impedance layer, the conductive layer and the protective layer are stacked one on top of another, and then the conductive layer is electrically connected to the lead terminal made of vanadium metal material to input an input voltage, so that the thermal energy can be detected by using the stacking structure.

The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, all equivalent changes or modifications according to the features and the spirit of the present invention should be included in the protection scope of the present invention.