Process method for eliminating micro short circuit in production of functional chip by using megohmmeter

文档序号:953407 发布日期:2020-10-30 浏览:2次 中文

阅读说明:本技术 一种利用兆欧表消除功能片生产出现的微短路的工艺方法 (Process method for eliminating micro short circuit in production of functional chip by using megohmmeter ) 是由 丁振宇 于 2020-07-07 设计创作,主要内容包括:本发明提供一种利用兆欧表消除功能片生产出现的微短路的工艺方法,涉及消除功能片微短路技术领域,包括以下步骤:S1、准备治具,S2、使用万用表测量,S3、选择兆欧表的电压值,S4、将兆欧表两个指针接触绑定pad,S5、消除微短路的杂质,S6、使用高清视频显微镜观察,S7、做功能测试,S8、选好兆欧表电压,S9、消除短路不良。本发明中,微短路会影响触摸准确性和线性度,程序调试中也是NG项,功能片出现微短路是不良品,如果不能修补,是需要报废处理的,该工艺可以消除微短路,极大提高功能片生产直通率,减少报废率,相对旧工艺,利用兆欧表烧蚀微短路的杂质简单快捷、准确性高、不易造成二次不良,比如切割短路的位置的时候切断了线路。(The invention provides a process method for eliminating micro short circuit generated in functional chip production by utilizing a megger, which relates to the technical field of eliminating the micro short circuit of the functional chip and comprises the following steps: s1, preparing a jig, S2, measuring by using a universal meter, S3, selecting a voltage value of the megger, S4, binding two pointers of the megger with a pad in a contact manner, S5, eliminating impurities of micro short circuit, S6, observing by using a high-definition video microscope, S7, performing work performance test, S8, selecting the voltage of the megger, S9, and eliminating poor short circuit. In the invention, the micro short circuit can influence the touch accuracy and linearity, the NG item is also used in program debugging, the functional chip is a defective product when the micro short circuit occurs, if the functional chip can not be repaired, the functional chip needs to be scrapped, the process can eliminate the micro short circuit, the production through rate of the functional chip is greatly improved, the scrappage rate is reduced, compared with the old process, the process has the advantages that the impurities of the micro short circuit are ablated by using a megohmmeter, the process is simple and quick, the accuracy is high, secondary defects are not easily caused, and for example, a circuit is cut off when the position of the short.)

1. A process method for eliminating micro short circuit in functional chip production by using a megohmmeter is characterized by comprising the following steps:

S1, preparing a jig: a universal meter, a megohmmeter and a high-definition video microscope with an M ohm grade;

s2, after silver paste laser etching, using a universal meter to measure and check the micro short circuit of the silver paste circuit, adjusting the universal meter to 200M omega level for measurement, contacting two pointers with two adjacent ITO channels, and displaying that the universal meter is larger than 0.1M omega, namely the micro short circuit;

s3, selecting a voltage value of the megger according to the laser line distance of the silver paste;

s4, placing two pointers of the megger on the two short-circuited silver paste binding pads;

s5, the current generated between the megger voltage and the silver paste circuit resistance can ablate and eliminate the impurity causing micro short circuit;

s6, observing by using a high-definition video microscope;

s7, connecting a control card after the FPC is bonded to perform work performance test;

s8, displaying the short circuit by the control card test software, and selecting megameter voltage according to the laser line distance of the silver paste;

s9, placing two pointers of the megger on pin pins of two short-circuit channels corresponding to the FPC, and ablating and eliminating impurities causing micro short circuit;

and S10, measuring by using a multimeter.

2. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation step in S1, the model of the multimeter is: VICTOR VC9807A +, megohmmeter model number: VICTOR VC60B +, model number for high definition video microscope: TTL, HK, 15-45 times.

3. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation step in S2, the ITO channel, i.e., the test channel, has an impedance greater than 0.1M Ω and is a micro short between 0 and several tens M Ω.

4. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation step in S3, the voltage values are: 250/500/1000 VDC.

5. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation procedure in S4, the megger voltage is adjusted to 500VDC and the contact time is not more than 2S.

6. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation procedure in S6, if there is any impurity, the operation procedures of S2-S6 are repeated until there is no impurity, and the next step can be proceeded.

7. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation step in S7, the supplier of the control card is: dada gaco or EETI.

8. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation steps in S10, if the repair is successful when the multimeter measurement value is 0, the multimeter measures between 0 and dozens of M omega, and the operation steps from S7 to S9 are repeated until the multimeter measurement value is 0.

Technical Field

The invention relates to the technical field of eliminating micro short circuit of a functional chip, in particular to a process method for eliminating micro short circuit in the production of the functional chip by utilizing a megohmmeter.

Background

The position of short circuit is confirmed at first to the little short circuit that function piece production appears using high definition video microscope inspection, and then the staff cuts off the place of short circuit with sharp blade under high definition video microscope, because the line spacing linewidth of silver thick liquid circuit is bigger, and the cutting is still easy.

The process is difficult to find the position of the short circuit, and because the micro short circuit is generally caused by connecting two or more silver paste lines by impurities such as dust, impurities, silver paste impurities, fiber impurities during production, employee hair and flocks and the like in the air, the micro short circuit is difficult to observe under a microscope or to detect by other technical means. Therefore, the production of the functional chip has micro short circuit, basically cannot be repaired, and only the functional chip can be scrapped.

Disclosure of Invention

The invention aims to provide a process method for eliminating micro short circuit in functional chip production by using a megohmmeter, which does not need to confirm the position of the micro short circuit any more and can solve the problems that the micro short circuit of a silver paste line with the line width and the line distance of below 130um cannot be cut by a sharp blade.

In order to achieve the purpose, the invention is realized by the following technical scheme: a process method for eliminating micro short circuit in functional chip production by using a megohmmeter comprises the following steps:

s1, preparing a jig: multimeters, megohmmeters and high-definition video microscopes with M ohm-rating.

S2, after silver paste laser etching, using a universal meter to measure and check the micro short circuit of the silver paste circuit, adjusting the universal meter to 200M omega level for measurement, contacting two pointers with two adjacent ITO channels, and displaying that the universal meter is larger than 0.1M omega, namely, the micro short circuit.

And S3, selecting the voltage value of the megger according to the laser line distance of the silver paste.

And S4, placing two pointers of the megger on the two short-circuited silver paste binding pads.

And S5, the current generated between the megger voltage and the silver paste circuit resistance can ablate and eliminate the impurities causing the micro short circuit.

And S6, observing by using a high-definition video microscope.

And S7, connecting a control card after the FPC is bonded to perform work performance test.

And S8, displaying the short circuit by the control card test software, and selecting the megameter voltage according to the laser line distance of the silver paste.

S9, two pointers of the megger are placed on pin pins of two short-circuit channels corresponding to the FPC, and therefore micro short-circuit defects can be eliminated.

And S10, measuring by using a multimeter.

Preferably, the method comprises the following steps: according to the operation step in S1, the model of the multimeter is: VICTORVC9807A +, the model number of the megohmmeter is: VICTORVC60B +, model number of high definition video microscope: TTL, HK, 15-45 times.

Preferably, the method comprises the following steps: according to the operation step in S2, the ITO channel, i.e., the test channel, has an impedance greater than 0.1M Ω and is a micro short between 0 and several tens M Ω.

Preferably, the method comprises the following steps: according to the operation step in S3, the voltage values are: 250/500/1000 VDC.

Preferably, the method comprises the following steps: according to the operation procedure in S4, the megger voltage is adjusted to 500 VDC. The contact time is not more than 2S.

Preferably, the method comprises the following steps: according to the operation procedure in S6, if there is still any impurity, the operation procedures from S2 to S6 are repeated until there is no impurity, and the process proceeds to the next step.

Preferably, the method comprises the following steps: according to the operation step in S7, the supplier of the control card is: dada gaco or EETI.

Preferably, the method comprises the following steps: according to the operation steps in S10, if the repair is successful when the multimeter measurement value is 0, the multimeter measures between 0 and dozens of M omega, and the operation steps from S7 to S9 are repeated until the multimeter measurement value is 0.

The invention provides a process method for eliminating micro short circuit in functional chip production by using a megohmmeter. The method has the following beneficial effects:

1. according to the process method for eliminating the micro short circuit in the functional chip production by using the megohmmeter, the micro short circuit can influence the touch accuracy and linearity, the NG item is also used in program debugging, the functional chip is a defective product when the micro short circuit occurs, if the functional chip cannot be repaired, the functional chip needs to be scrapped, the process can eliminate the micro short circuit, the production through rate of the functional chip is greatly improved, and the scrappage is reduced.

2. Compared with the prior art, the process method for eliminating the micro short circuit in the production of the functional chip by using the megohmmeter has the advantages that the ablation of impurities in the micro short circuit by using the megohmmeter is simple, quick and high in accuracy, and secondary defects are not easily caused, for example, a circuit is cut off when the position of the short circuit is cut.

3. The process method for eliminating the micro short circuit in the production of the functional chip by using the megohmmeter can solve the problem of the micro short circuit of the silver paste circuit with the line width of below 130 um.

4. The process method for eliminating the micro short circuit in the production of the functional chip by using the megohmmeter does not need to visually check and confirm the position of the micro short circuit, and the position of the micro short circuit is relatively difficult to detect for large sizes.

Drawings

FIG. 1 is a schematic flow chart of the method of the present invention.

Detailed Description

The invention provides a technical scheme that: as shown in fig. 1, a process for eliminating micro short circuit in functional chip production by using a megohmmeter comprises the following specific steps:

step one, preparing a jig: take universal meter, megohmmeter, high definition video microscope of M euro shelves, the model of universal meter is: VICTORVC9807A +, the model number of the megohmmeter is: VICTORVC60B +, model number of high definition video microscope: TTL, HK, 15-45 times.

And step two, after silver paste laser etching, using a universal meter to measure and check the micro short circuit of the silver paste circuit, adjusting the universal meter to 200M omega level for measurement, contacting two adjacent ITO channels by two pointers, wherein the universal meter displays that the impedance of the ITO channels is more than 0.1M omega, namely the micro short circuit, and the impedance of the ITO channels, namely the test channels, is more than 0.1M omega, and the micro short circuit is between 0 and dozens of M omega.

Selecting a voltage value of the megger according to the laser line distance of the silver paste, wherein the voltage value is as follows: 250/500/1000 VDC.

And step four, placing two pointers of the megger on the two short-circuited silver paste binding pads, adjusting the voltage of the megger to be 500VDC, and enabling the contact time to be not more than 2S.

And step five, the current generated between the megger voltage and the silver paste circuit resistor can ablate and eliminate impurities causing micro short circuit.

And sixthly, observing by using a high-definition video microscope, and repeating the operation steps from S2 to S6 until no impurities exist, if impurities exist, observing by using the high-definition video microscope, and then entering the next step.

Connecting a control card to perform function test after the FPC is bonded, wherein the supplier of the control card is as follows: dada gaco or EETI (grahamia).

And step eight, the software for testing the control card can display the short-circuited specific line at the moment, and the megameter voltage is selected according to the line distance of the silver paste laser.

And step nine, placing two pointers of the megger on pin pins of two short-circuited line channels corresponding to the FPC, so that the defect of micro short circuit can be eliminated.

Step ten, using a universal meter to measure, if the measured value of the universal meter is 0, the repair is successful, the measured value of the universal meter is between 0 and dozens of M omega, and repeating the operation steps from S7 to S9 until the measured value of the universal meter is 0.

The process difficulty lies in judging the relationship between the voltage setting of the megohmmeter and the length of the silver paste and the line distance and line width of the silver paste circuit and the setting of the contact time of the pointer, and because the larger the voltage is, the longer the contact time is, the larger the ablation effect on the silver paste circuit is, the silver paste circuit can become scorched and crisp, even the silver paste circuit can be scorched and become invalid, and through multiple experiments, the experimental data are as follows:

Figure BDA0002573146260000051

Through a plurality of experiments, the following results are obtained: experimental data that micro short circuit caused by impurities such as dust, sundries, silver paste sundries in the air, fiber sundries and employee hair scraps during production and the like appears on the functional sheet of 10.1-86 inches, the voltage of a megohmmeter is uniformly adjusted to 500VDC, and the contact time is not more than 2S.

Multiple experiments lead to the conclusion that: 1. experiments confirm that no matter the size of the laser line distance, 500V/1-2S is selected as the optimal condition, 2, for a sensor with the laser line distance not less than 220um, 500V voltage is selected as the optimal voltage, if the optimal voltage cannot be eliminated, 1000V is used instead, the contact time is 1S as the optimal voltage, the 3 and 1000V gears are used with caution, the same contact time occurs in the experiment, and silver paste contacted by a gauge pen when 1000V is selected can be ablated to be in a scorched state (observable under a microscope), so that the open circuit of the silver paste circuit is caused.

The product was tested for properties as follows:

the foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the inventive concept of the present invention, and these changes and modifications are all within the scope of the present invention.

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