阅读说明：本技术 可大面积制备增大手性场的结构及其制备方法 (Structure capable of preparing enlarged chiral field in large area and preparation method thereof ) 是由 不公告发明人 于 2020-08-05 设计创作，主要内容包括：本发明涉及可大面积制备增大手性场的结构及其制备方法,主要涉及增强手性场的领域。该结构的贵金属层设置在基底的一侧,手性分子层设置在贵金属层远离基底的一侧,手性分子层内填充有手性分子溶液,多个胶体小球周期镶嵌在手性分子溶液中,贵金属包裹膜包裹在胶体小球的外壁上。由于贵金属包裹膜-胶体小球-贵金属层构成了金属-介质-金属的结构,在贵金属包裹膜周围,磁场被增强,电场被抑制,产生了较大的手性场,并且手性场是一种手性,所以测量手性分子溶液时,手性场不会抵消分子的手性,减弱手性增强的效果,因此探测手性分子时具有较强的信号。并且本发明中通过胶体小球作为介质隔离层,使得本申请中的结构可以大面积制备。(The invention relates to a structure capable of preparing an enlarged chiral field in a large area and a preparation method thereof, and mainly relates to the field of enhancing the chiral field. The noble metal layer setting of this structure is in one side of base, and chiral molecular layer setting has chiral molecule solution at the one side that the base was kept away from to the noble metal layer, and chiral molecular layer intussuseption is filled with chiral molecule solution, and a plurality of colloid bobbles are inlayed in chiral molecule solution periodically, and noble metal parcel membrane parcel is on the outer wall of colloid bobble. Because the noble metal wrapping film, the colloidal globule and the noble metal layer form a metal-medium-metal structure, the magnetic field is enhanced, the electric field is inhibited and a larger chiral field is generated around the noble metal wrapping film, and the chiral field is chiral, so when the chiral molecular solution is measured, the chiral field can not offset the chirality of the molecules, the chiral enhancement effect is weakened, and therefore, a stronger signal is obtained when the chiral molecules are detected. In addition, the colloid ball is used as a medium isolation layer, so that the structure in the application can be prepared in a large area.)

1. A structure for large area fabrication of increased chiral fields, the structure comprising: the novel metal ball comprises a substrate, a precious metal layer, a chiral molecular layer, a precious metal wrapping film and a plurality of colloid balls, wherein the precious metal layer is arranged on one side of the substrate, the chiral molecular layer is arranged on one side, away from the precious metal layer, of the substrate, chiral molecular solution is filled in the chiral molecular layer, the colloid balls are embedded in the chiral molecular solution periodically, and the precious metal wrapping film wraps the outer walls of the colloid balls.

2. The structure for large-area preparation of increased chiral field according to claim 1, wherein a plurality of said colloidal globules are embedded in said chiral molecular solution in a hexagonal periodic arrangement.

3. The structure for large area preparation of increased chiral field according to claim 1, wherein the chiral molecule solution has a height smaller than the diameter of the colloidal globule.

4. The structure capable of large-area preparation of increased chiral field according to claim 1, wherein the material of said colloidal spheres is polystyrene.

5. The structure capable of large-area preparation of increased chiral field according to claim 1, wherein the thickness of the noble metal coating is not less than 150 nm.

6. The structure capable of increasing chiral field in large area according to claim 1, wherein the noble metal coating film covers a part of the lateral surface of the colloidal globule.

7. The structure for large-area preparation of increased chiral field according to claim 1, wherein the noble metal layer is coated on the side of the colloidal globule away from the noble metal layer.

8. A method for preparing a large-area chiral field-enlarging structure, which is applied to any one of claims 1 to 7, and comprises:

evaporating a noble metal layer on a substrate by using an electron beam evaporation coating instrument;

laying colloid balls in six-close-packed arrangement on one side of the noble metal layer away from the substrate;

scattering the small balls by using an ultrasonic technology;

using an electron beam evaporation coating instrument to evaporate a noble metal layer on the colloid globule for multiple times;

and arranging the chiral molecular solution around the ball coated with the noble metal wrapping film by a spin coating method.

9. The method for preparing a structure capable of increasing chiral field in a large area according to claim 8, wherein the spin speed is less than 600rpm when spin coating the chiral molecular solution.

Technical Field

The invention relates to the field of enhancing chiral fields, in particular to a structure capable of preparing an enlarged chiral field in a large area and a preparation method thereof.

Background

It was found that the chirality of the electromagnetic wave is increased at the node of the standing wave formed by the circularly polarized light, and thus the chiral signal of the biomolecule can be enhanced in this way. However, this device is very complicated and not practical. Recent research shows that electromagnetic waves with stronger chirality than circularly polarized light can be generated around a metal-dielectric-metal micro-nano structure. The chiral molecules are used as effective refractive indexes, and the chiral signals of the chiral molecules can be greatly enhanced by detecting the movement of the CD spectrum of the metal chiral micro-nano structure in the chiral molecule environment.

However, the preparation of the multilayer structure is generally complicated, the preparation difficulty is high, and the large-area preparation is difficult to realize.

Disclosure of Invention

The present invention aims to provide a structure capable of large-area preparation of an increased chiral field and a preparation method thereof, so as to solve the problems in the prior art that the preparation of a multilayer structure is generally complicated, the preparation difficulty is high, and large-area preparation is difficult to realize.

In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:

in a first aspect, embodiments of the present application provide a structure capable of large-area preparation of an increased chiral field, where the structure includes: the novel metal oxide semiconductor chip comprises a substrate, a noble metal layer, a chiral molecular layer, a noble metal wrapping film and a plurality of colloid pellets, wherein the noble metal layer is arranged on one side of the substrate, the chiral molecular layer is arranged on one side of the noble metal layer far away from the substrate, chiral molecular solution is filled in the chiral molecular layer, the colloid pellets are periodically embedded in the chiral molecular solution, and the noble metal wrapping film is wrapped on the outer wall of the colloid pellets.

Optionally, the plurality of colloidal beads are periodically arranged and inlaid in a hexagonal shape in the chiral molecular solution.

Optionally, the height of the chiral molecule solution is less than the diameter of the colloidal globule.

Optionally, the material of the colloidal spheres is polystyrene.

Optionally, the noble metal wrapping film has a thickness of not less than 150 nm.

Optionally, the noble metal coating covers a portion of the side of the colloidal sphere.

Optionally, the noble metal layer covers the side of the colloidal globule away from the noble metal layer.

In a second aspect, an embodiment of the present application provides a method for preparing a structure capable of increasing a chiral field in a large area, where the method is applied to any one of the first aspect, and the method includes:

evaporating a noble metal layer on a substrate by using an electron beam evaporation coating instrument;

laying colloid balls in six-close-packed arrangement on one side of the noble metal layer away from the substrate;

scattering the small balls by using an ultrasonic technology;

using an electron beam evaporation coating instrument to evaporate a noble metal layer on the colloid globule for multiple times;

and arranging the chiral molecular solution around the ball coated with the noble metal wrapping film by a spin coating method.

Optionally, when the chiral molecule solution is spin-coated, the spin-coating speed is less than 600 rpm.

The invention has the beneficial effects that:

the application discloses a can prepare structure that increases chiral field in large tracts of land includes: the novel metal oxide semiconductor chip comprises a substrate, a noble metal layer, a chiral molecular layer, a noble metal wrapping film and a plurality of colloid pellets, wherein the noble metal layer is arranged on one side of the substrate, the chiral molecular layer is arranged on one side of the noble metal layer far away from the substrate, chiral molecular solution is filled in the chiral molecular layer, the colloid pellets are periodically embedded in the chiral molecular solution, and the noble metal wrapping film is wrapped on the outer wall of the colloid pellets. Because the noble metal wrapping film, the colloidal globule and the noble metal layer form a metal-medium-metal structure, the magnetic field is enhanced and the electric field is inhibited around the colloidal globule, so that a larger chiral field is distributed around the globule, and the chiral field is the chiral field generated by the chiral molecular solution, so that the chiral offset is not generated in the chiral field when the chiral molecular solution is added, and the chiral enhancement effect is weakened.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic structural diagram of an embodiment of the present invention, which is capable of preparing an increased chiral field in a large area;

FIG. 2 is a chiral field distribution diagram for large-area preparation of a structure with an increased chiral field according to an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of an alternative method for large-area preparation of an increased chiral field according to an embodiment of the present invention;

FIG. 4 is a schematic structural diagram of an alternative method for large-area preparation of an increased chiral field according to an embodiment of the present invention;

FIG. 5 is a schematic structural diagram of an embodiment of the present invention, which is capable of preparing an increased chiral field in a large area.

Icon: 1-a substrate; 2-a noble metal layer; 3-a layer of chiral molecules; 4-colloidal globules; 5-noble metal wrapping film.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiment is a metal plate embodiment of the present invention, and not all embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.

Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In order to make the implementation of the present invention clearer, the following detailed description is made with reference to the accompanying drawings.