阅读说明：本技术 一种铟锡氧化物磨球的制备方法 (Preparation method of indium tin oxide grinding ball ) 是由 师琳璞 王政红 张秀勤 于 2020-06-24 设计创作，主要内容包括：一种铟锡氧化物磨球的制备方法,将氧化铟粉和氧化锡粉加入水中进行混合、研磨、造粒,得到造粒粉,氧化铟粉的重量比例为氧化铟粉和氧化锡粉总重量的90%-97%；然后将造粒粉装入模具进行冷等静压处理,得到坯体,对坯体进行破碎和筛分,得到晶种；以晶种作为球坯的核心,使造粒粉和晶种进行滚制成型,得到球坯；对球坯的表面进行蜡封,然后对球坯进行冷等静压处理；再对冷等静压后的球坯进行脱脂处理,对脱脂后的球坯进行烧结,得到铟锡氧化物磨球。本发明通过滚制成型、冷等静压、烧结相配合的方法得到密度高、晶粒小的铟锡氧化物磨球,用本发明的磨球制备得到的ITO靶材密度大于7.12 g/cm<Sup>3</Sup>,纯度大于99.99%,能够满足ITO靶材制备的研磨需要。(A preparation method of indium tin oxide grinding balls comprises the steps of adding indium oxide powder and tin oxide powder into water for mixing, grinding and granulating to obtain granulated powder, wherein the weight ratio of the indium oxide powder is 90-97% of the total weight of the indium oxide powder and the tin oxide powder; then, filling the granulated powder into a mold for cold isostatic pressing treatment to obtain a blank, and crushing and screening the blank to obtain seed crystals; taking the seed crystal as the core of the ball blank, and rolling and molding the granulation powder and the seed crystal to obtain the ball blank; carrying out wax sealing on the surface of the ball blank, and then carrying out cold isostatic pressing treatment on the ball blank; then the ball blank after cold isostatic pressing is degreased, and the ball blank is processedSintering the degreased ball blank to obtain the indium tin oxide grinding ball. The indium tin oxide grinding ball with high density and small crystal grains is obtained by the method of matching roll forming, cold isostatic pressing and sintering, and the density of the ITO target material prepared by the grinding ball is more than 7.12 g/cm 3 The purity is more than 99.99 percent, and the grinding requirement of the ITO target preparation can be met.)

1. The preparation method of the indium tin oxide grinding ball is characterized by comprising the following steps:

adding indium oxide powder and tin oxide powder into water, mixing, grinding and granulating to obtain granulated powder, wherein the weight ratio of the indium oxide powder is 90-97% of the total weight of the indium oxide powder and the tin oxide powder;

step two, putting the granulated powder obtained in the step one into a die for cold isostatic pressing treatment to obtain a blank, and crushing and screening the blank to obtain seed crystals;

step three, taking the seed crystal obtained in the step two as a core of the ball blank, and performing rolling molding on the granulated powder obtained in the step one and the seed crystal obtained in the step two to obtain the ball blank;

step four, wax sealing the surface of the ball blank obtained in the step three, and then carrying out cold isostatic pressing treatment on the ball blank;

step five, degreasing the ball blank subjected to cold isostatic pressing, and removing a wax seal layer and an organic auxiliary agent on the surface of the ball blank;

and step six, sintering the degreased ball blank to obtain the indium tin oxide grinding ball.

2. The method for preparing an indium tin oxide grinding ball according to claim 1, characterized in that: the diameter of the ball blank obtained in the third step is 0.1mm-4 mm.

3. The method for preparing an indium tin oxide grinding ball according to claim 1, characterized in that: and the wax sealing in the fourth step is that a plurality of ball blanks are poured into a container containing liquid paraffin at the same time, the ball blanks are uniformly dispersed in the container, then the ball blanks are taken out from the container, and the ball blanks pass through a screen mesh and then enter cold water for cooling and film solidification.

4. The method for preparing an indium tin oxide grinding ball according to claim 3, characterized in that: and after the plurality of ball blanks are poured into the container, closing the container and rolling the container to uniformly disperse the plurality of ball blanks in the container.

5. The method for preparing an indium tin oxide grinding ball according to claim 3, characterized in that: after the plurality of ball blanks are poured into the container, the liquid paraffin contained in the container is stirred, so that the plurality of ball blanks are uniformly dispersed in the container.

6. The method for preparing an indium tin oxide grinding ball according to claim 1, characterized in that: the pressure of the cold isostatic pressing treatment in the second step is 50-200MPa, and the pressure of the cold isostatic pressing treatment in the fourth step is 150-400 MPa.

7. The method for preparing an indium tin oxide grinding ball according to claim 1, characterized in that: the degreasing temperature in the step five is 550-650 ℃.

8. The method for preparing an indium tin oxide grinding ball according to claim 1, characterized in that: in the sixth step, an oxygen atmosphere normal pressure sintering mode is adopted, the sintering temperature is 1400-1800 ℃, and the heat preservation time is 10-60 hours.

9. The method for preparing an indium tin oxide grinding ball according to claim 8, characterized in that: the sintering temperature in the sixth step is 1400-.

Technical Field

The invention relates to the field of preparation methods of ceramic grinding balls, in particular to a preparation method of an indium tin oxide grinding ball.

Background

The ITO target can form a transparent conductive film on a substrate by a magnetron sputtering method, is an important material for manufacturing flat-panel liquid crystal display, and has important application in the aspects of electronics, information, communication and artificial intelligence. In order to obtain a conductive film with low resistance and high light transmittance, the relative density of the ITO target material is required to reach more than 99.5%, the structure is uniform, and the purity reaches 99.99%. The density and texture affect the structure and uniformity of the film, and the purity directly affects the electrical resistance and light transmittance of the film.

When the ITO target material is prepared, a zirconium oxide grinding ball or an agate grinding ball is generally used in a grinding process, so that impurities such as Zr, Si and the like are inevitably introduced into the target material, and the service performance of the target material is influenced. The grinding ball is also made of high polymer, so that the introduction of impurities can be reduced, but the high polymer grinding ball has low density and hardness, and is difficult to generate enough kinetic energy to ensure sufficient grinding. Therefore, the conventional grinding ball is difficult to meet the grinding requirement for preparing the ITO target material, and the development of the ITO target material is restricted.

Disclosure of Invention

The invention provides a preparation method of an indium tin oxide grinding ball, aiming at solving the problem that the existing grinding ball is difficult to meet the grinding requirement of ITO target preparation.

The technical scheme adopted by the invention for solving the technical problems is as follows: a preparation method of an indium tin oxide grinding ball comprises the following steps:

adding indium oxide powder and tin oxide powder into water, mixing, grinding and granulating to obtain granulated powder, wherein the weight ratio of the indium oxide powder is 90-97% of the total weight of the indium oxide powder and the tin oxide powder;

step two, putting the granulated powder obtained in the step one into a die for cold isostatic pressing treatment to obtain a blank, and crushing and screening the blank to obtain seed crystals;

step three, taking the seed crystal obtained in the step two as a core of the ball blank, and performing rolling molding on the granulated powder obtained in the step one and the seed crystal obtained in the step two to obtain the ball blank;

step four, wax sealing the surface of the ball blank obtained in the step three, and then carrying out cold isostatic pressing treatment on the ball blank;

step five, degreasing the ball blank subjected to cold isostatic pressing, and removing a wax seal layer and an organic auxiliary agent on the surface of the ball blank;

and step six, sintering the degreased ball blank to obtain the indium tin oxide grinding ball.

Preferably, the diameter of the ball blank obtained in the third step is 0.1mm-4 mm.

Preferably, the wax sealing in the fourth step is to pour a plurality of ball blanks into a container containing liquid paraffin at the same time, uniformly disperse the plurality of ball blanks in the container, take the ball blanks out of the container, and make the ball blanks pass through a screen mesh and then enter cold water for cooling and film solidification.

Preferably, after the plurality of ball blanks are poured into the container, the container is closed and turned over, so that the plurality of ball blanks are uniformly dispersed in the container.

Preferably, after the plurality of ball blanks are poured into the container, the liquid paraffin contained in the container is stirred, so that the plurality of ball blanks are uniformly dispersed in the container.

Preferably, the pressure of the cold isostatic pressing treatment in the step two is 50-200MPa, and the pressure of the cold isostatic pressing treatment in the step four is 150-400 MPa.

Preferably, the degreasing temperature in the step five is 550-650 ℃.

Preferably, the step six adopts a mode of oxygen atmosphere normal pressure sintering, the sintering temperature is 1400-1800 ℃, and the heat preservation time is 10-60 hours.

Further, the sintering temperature in the sixth step is 1400-.

According to the technical scheme, the invention has the beneficial effects that:

1. according to the invention, the indium tin oxide grinding ball with high density and small crystal grains is obtained by the method of matching rolling forming, cold isostatic pressing and sintering, the grinding ball with the particle size of 0.1-4 mm, the density of more than 7.12 g/cm3 and the crystal grain of less than 6 microns can be prepared, the impact force of the grinding ball is strong, the grinding efficiency is high, the grinding effect is good, the abrasion is small, any other impurities except ITO can not be introduced in the preparation process, and the negative influence on the forming and sintering process can not be caused. ITO target prepared by using grinding ball of the inventionThe density of the material is more than 7.12 g/cm³The purity is more than 99.99 percent, and the grinding requirement of the ITO target preparation can be met.

2. According to the invention, a protective layer is coated on the surface of the ball blank by adopting a wax sealing method, and screening is carried out before film fixing so as to avoid agglomeration of the ball blank, so that not only can smooth isostatic pressing be ensured, but also the pressure conduction liquid can be prevented from contacting with the ball blank, thereby successfully realizing cold isostatic pressing of the ball blank with the thickness of 0.1-4 mm, improving the compactness of the ball blank and finally improving the density and mechanical properties of a grinding ball.

3. The invention adopts a method of roll forming and cold isostatic pressing, so that the compactness of the ball blank is improved, and the size of the ball blank is smaller, therefore, in the preferred scheme of the invention, the ball blank can be sintered at 1400-1550 ℃, the conventional sintering temperature of the ball blank is above 1600 ℃, and the ball blank can be sintered at a temperature lower than the conventional temperature, so that the crystal grains of the grinding ball can be further reduced, and the abrasion is further reduced.

Detailed Description

A preparation method of an indium tin oxide grinding ball comprises the following steps:

adding indium oxide powder and tin oxide powder into water, mixing, grinding and granulating to obtain granulated powder, wherein the weight ratio of the indium oxide powder is 90-97% of the total weight of the indium oxide powder and the tin oxide powder.

And step two, putting the granulated powder obtained in the step one into a die for cold isostatic pressing treatment, wherein the pressure of the cold isostatic pressing treatment is 50-200MPa, so as to obtain a blank body, and crushing and screening the blank body to obtain the seed crystal.

And step three, taking the seed crystal obtained in the step two as a core of the ball blank, and performing rolling molding on the granulated powder obtained in the step one and the seed crystal obtained in the step two to obtain the ball blank, wherein the diameter of the ball blank is 0.1-4 mm.

And step four, carrying out wax sealing on the surfaces of the ball blanks obtained in the step three, pouring a plurality of ball blanks into a container containing liquid paraffin at the same time, uniformly dispersing the ball blanks in the container, taking the ball blanks out of the container, enabling the ball blanks to pass through a screen mesh and then enter cold water for cooling and film solidification, and carrying out cold isostatic pressing treatment on the ball blanks, wherein the pressure of the cold isostatic pressing treatment is 150-400 MPa.

After pouring a plurality of ball bases into the container, can seal the container and roll the container, make a plurality of ball bases homodisperse in the container, also can stir the liquid paraffin that holds in the container, make a plurality of ball bases homodisperse in the container.

Step five, degreasing the ball blank subjected to cold isostatic pressing at the degreasing temperature of 550-650 ℃, and removing the wax seal layer and the organic auxiliary agent on the surface of the ball blank;

and step six, sintering the degreased ball blank in an oxygen atmosphere normal pressure sintering mode, wherein the sintering temperature is 1400 ℃ plus 1800 ℃, and the heat preservation time is 10-60 hours, so as to obtain the indium tin oxide grinding ball.

In a preferred scheme, the compactness of the ball blank is improved by adopting a method of roll forming and cold isostatic pressing, and the size of the ball blank is smaller, so that the sintering temperature can be reduced to 1400 ℃ and 1550 ℃, the crystal grains of the grinding ball can be further reduced, and the abrasion is further reduced.