阅读说明：本技术 一种射频偏置电路封装结构 (Radio frequency bias circuit packaging structure ) 是由 阎述昱 其他发明人请求不公开姓名 于 2019-04-18 设计创作，主要内容包括：一种射频偏置电路封装结构,射频偏置电路封装结构包括封装部件,封装部件内封装有功率放大器；射频偏置电路,射频偏置电路包括射频扼流部件,功率放大器电连接输出负载的端口经由射频扼流部件电连接至直流偏置电压源；封装部件覆盖射频扼流部件。通过本发明的技术方案,在实现了射频扼流部件与功率放大器连接关系,避免了射频信号影响直流偏置电压源特性的同时,避免了射频偏置电路在印刷电路板上设置较长的偏置线导致的功率放大器模块占用大面积的印刷电路板的问题,有利于减小功率放大器模块的尺寸,提高印刷电路板的集成度。(A radio frequency bias circuit packaging structure comprises a packaging component, wherein a power amplifier is packaged in the packaging component; the radio frequency bias circuit comprises a radio frequency choke component, and a port of the power amplifier, which is electrically connected with the output load, is electrically connected with the direct current bias voltage source through the radio frequency choke component; the encapsulation part covers the radio frequency choke part. According to the technical scheme, the connection relation between the radio frequency choking component and the power amplifier is realized, the influence of radio frequency signals on the characteristics of a direct current bias voltage source is avoided, the problem that the power amplifier module occupies a large-area printed circuit board due to the fact that the radio frequency bias circuit is provided with a long bias line on the printed circuit board is avoided, the size of the power amplifier module is favorably reduced, and the integration level of the printed circuit board is improved.)

1. A radio frequency bias circuit package structure, comprising:

a package in which a power amplifier is packaged;

a radio frequency bias circuit including a radio frequency choke component via which a port of the power amplifier electrically connected to an output load is electrically connected to a direct current bias voltage source;

the encapsulation part covers the radio frequency choke part.

2. The package structure of claim 1, wherein the package component includes a plurality of pads, the rf choke component is disposed corresponding to a region where a portion of the pads of the package component are located, and the rf choke component is electrically connected to the portion of the pads.

3. The rf bias circuit package structure of claim 2, wherein the rf choke member extends along an arrangement direction of the partial pads.

4. The package structure of claim 3, further comprising a resonant circuit packaged in the package component, wherein the resonant circuit includes a resonant inductor and a resonant capacitor, a first end of the resonant inductor is electrically connected to the pad corresponding to one end of the rf choke component, a second end of the resonant inductor is electrically connected to a first end of the resonant capacitor, and a second end of the resonant capacitor is connected to a fixed voltage.

5. The package structure of claim 4, wherein the pad corresponding to one end of the RF choke component is electrically connected to the DC bias voltage source, and the pad corresponding to the other end of the RF choke component is electrically connected to the drain of the power amplifier.

6. The RF bias circuit package of claim 4, wherein the resonant inductor comprises a bond wire and/or the resonant capacitor comprises an IPD.

7. The rf bias circuit package structure of claim 1, wherein the rf choke component is disposed on the printed circuit board in an area for disposing the package component, and the package component is attached to the rf choke component.

8. The rf bias circuit package structure of claim 1, wherein the rf choke is attached to the package.

9. The rf bias circuit package structure of claim 1, wherein the rf choke is a microstrip line.

10. The radio frequency bias circuit package structure of claim 1, wherein the package component is a QFN package component or the package component is a DFN package component.

Technical Field

The embodiment of the invention relates to the field of packaging, in particular to a radio frequency bias circuit packaging structure.

Background

The power amplifier is an important component of a wireless communication system, the power amplifier is used for amplifying an input signal and then outputting the amplified signal, and the power amplifier converts direct current energy into radio frequency energy in the process of performing an amplification function.

At present, the power amplifier module is difficult to integrate with other modules, and most of the power amplifier modules are connected into the whole wireless communication system in the form of independent modules, so that the power amplifier module occupies a larger size of the whole wireless communication system, and the miniaturization of the whole wireless communication system is not facilitated. In addition, the conventional power amplifier needs to be provided with a bias circuit matched with the power amplifier during actual operation so as to provide a bias voltage for the power amplifier to perform an amplification function, but the currently adopted bias circuit of the power amplifier needs to introduce a longer bias line on the printed circuit board, the longer bias line occupies a larger area of the printed circuit board, and the integration level of the printed circuit board is lower.

Disclosure of Invention

In view of this, embodiments of the present invention provide a radio frequency bias circuit package structure, which achieves a connection relationship between a radio frequency choke component and a power amplifier, avoids the radio frequency signal from affecting characteristics of a dc bias voltage source, and avoids a problem that a large area of a printed circuit board is occupied by a power amplifier module due to a long bias line arranged on the printed circuit board by the radio frequency bias circuit, thereby facilitating reduction of a size of the power amplifier module and improvement of an integration level of the printed circuit board.

The embodiment of the invention provides a radio frequency bias circuit packaging structure, which comprises:

a package in which a power amplifier is packaged;

a radio frequency bias circuit including a radio frequency choke component via which a port of the power amplifier electrically connected to an output load is electrically connected to a direct current bias voltage source;

the encapsulation part covers the radio frequency choke part.

Furthermore, the packaging component comprises a plurality of bonding pads, the radio frequency choke component is arranged corresponding to the area where the partial bonding pads of the packaging component are located, and the radio frequency choke component is electrically connected with the partial bonding pads.

Further, the radio frequency choke member extends along the arrangement direction of the partial pads.

Further, a resonant circuit is packaged in the packaging component, the resonant circuit includes a resonant inductor and a resonant capacitor, a first end of the resonant inductor is electrically connected to the pad corresponding to one end of the radio frequency choke component, a second end of the resonant inductor is electrically connected to a first end of the resonant capacitor, and a second end of the resonant capacitor is connected to a fixed voltage.

Further, the pad corresponding to one end of the radio frequency choke component is electrically connected to the dc bias voltage source, and the pad corresponding to the other end of the radio frequency choke component is electrically connected to the drain of the power amplifier.

Further, the resonant inductor comprises a bonding wire, and/or the resonant capacitor comprises an IPD.

Further, the radio frequency choke component is arranged in a region, used for arranging the packaging component, on the printed circuit board, and the packaging component is attached to the radio frequency choke component.

Further, the radio frequency choke component is attached to the packaging component.

Further, the radio frequency choke part is a microstrip line.

Further, the package component is a QFN package component or the package component is a DFN package component.

The embodiment of the invention provides a radio frequency bias circuit packaging structure, which comprises a packaging component and a radio frequency bias circuit, wherein a power amplifier is packaged in the packaging component, the radio frequency bias circuit comprises a radio frequency choke component, a port of an output load electrically connected with the power amplifier is electrically connected to a direct current bias voltage source through the radio frequency choke component, the packaging component covers the radio frequency choke component, thus, the embodiment of the invention realizes the connection relationship between the radio frequency choking component and the power amplifier, avoids the radio frequency signal from influencing the characteristic of the direct current bias voltage source, the packaging component is arranged to cover the radio frequency choking component, so that the problem that the power amplifier module occupies a large-area printed circuit board due to the fact that the radio frequency bias circuit is provided with a long bias line on the printed circuit board is solved, the size of the power amplifier module is reduced, and the integration level of the printed circuit board is improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments or the background art of the present invention, the drawings needed to be used in the description of the embodiments or the background art will be briefly introduced below, and it is obvious that the drawings in the following description are schematic diagrams of some embodiments of the present invention, and for those skilled in the art, other solutions can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a radio frequency bias circuit package structure according to an embodiment of the present invention;

fig. 2 is a schematic diagram illustrating a connection relationship between a power amplifier and a radio frequency bias circuit according to an embodiment of the present invention;

fig. 3 is a schematic diagram of a power amplifier and an rf bias circuit in the prior art.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures. Throughout this specification, the same or similar reference numbers refer to the same or similar structures, elements, or processes. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.

The embodiment of the invention provides a radio frequency bias circuit packaging structure which comprises a packaging component and a radio frequency bias circuit, wherein a power amplifier is packaged in the packaging component, the radio frequency bias circuit comprises a radio frequency choking component, a port of an output load, which is electrically connected with the power amplifier, is electrically connected to a direct current bias voltage source through the radio frequency choking component, and the packaging component covers the radio frequency choking component.

The power amplifier is an important component of a wireless communication system, the power amplifier is used for amplifying an input signal and then outputting the amplified signal, and the power amplifier converts direct current energy into radio frequency energy in the process of performing an amplification function. At present, the power amplifier module is difficult to integrate with other modules, and most of the power amplifier modules are connected into the whole wireless communication system in the form of independent modules, so that the power amplifier module occupies a larger size of the whole wireless communication system, and the miniaturization of the whole wireless communication system is not facilitated. In addition, the conventional power amplifier needs to be provided with a bias circuit matched with the power amplifier during actual operation so as to provide a bias voltage for the power amplifier to perform an amplification function, but the currently adopted bias circuit of the power amplifier needs to introduce a longer bias line on the printed circuit board, the longer bias line occupies a larger area of the printed circuit board, and the integration level of the printed circuit board is lower.

The radio frequency bias circuit packaging structure provided by the embodiment of the invention comprises a packaging component and a radio frequency bias circuit, wherein a power amplifier is packaged in the packaging component, the radio frequency bias circuit comprises a radio frequency choke component, a port of an output load which is electrically connected with the power amplifier is electrically connected to a direct current bias voltage source through the radio frequency choke component, and the packaging component covers the radio frequency choke component, so that the embodiment of the invention realizes the connection relationship between the radio frequency choke component and the power amplifier, avoids the influence of radio frequency signals on the characteristics of the direct current bias voltage source, simultaneously arranges the packaging component to cover the radio frequency choke component, namely integrates the radio frequency bias circuit in the packaging component, avoids the problem that the power amplifier module occupies a large-area printed circuit board due to the arrangement of a longer bias line on the printed circuit board by the radio frequency bias circuit, and, the integration level of the printed circuit board is improved.

The above is the core idea of the present invention, and the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the protection scope of the present invention.

Fig. 1 is a schematic structural diagram of a radio frequency bias circuit package structure according to an embodiment of the present invention, and fig. 2 is a schematic connection relationship diagram of a power amplifier and a radio frequency bias circuit according to an embodiment of the present invention. With reference to fig. 1 and fig. 2, the rf bias circuit package structure includes a package component 1 and an rf bias circuit 2, a power amplifier Die is packaged in the package component 1, the rf bias circuit 2 includes an rf choke component TL, a port of the power amplifier Die electrically connected to the output load 5 is electrically connected to the dc bias voltage source VDD through the rf choke component TL, and the package component 1 covers the rf choke component TL.

Specifically, the power amplifier Die is configured to amplify and output an input signal, and convert direct current energy into radio frequency energy, the power amplifier Die may include a GaN or GaAs high electron mobility transistor, the power amplifier Die needs to be simultaneously provided with an input bias circuit and an output bias circuit during actual operation, the input bias circuit provides a gate bias voltage for the power amplifier Die, the output bias circuit provides a drain bias circuit for the power amplifier Die, and the radio frequency bias circuit 2 in the embodiment of the present invention is an output bias circuit. In addition, referring to fig. 1 and fig. 2, the rf bias circuit 2 includes an rf choke part TL, the power amplifier Die outputs an rf signal to the output load 5 through the drain D, and the rf choke part TL can effectively prevent the rf signal output by the drain D of the power amplifier Die from being transmitted to the dc bias voltage source VDD to affect the characteristics of the dc bias voltage source VDD.

Fig. 3 is a schematic diagram of a power amplifier and an rf bias circuit in the prior art. As shown in fig. 3, the rf bias circuit of the prior art needs to introduce a long bias line 30 on the pcb, and at the same time, a chip capacitor C is disposed on the pcb_f0A filter circuit is formed to filter the radio frequency signal output by the power amplifier Die to the output load 5, so as to prevent the radio frequency signal from being transmitted to the DC bias voltage source VDD to influence the characteristic of the DC bias voltage source VDD, the longer bias line 30 and the patch capacitor C_f0Occupies a larger area on the printed circuit board, increases the size of the power amplifier module, and reduces the integration level of the printed circuit board.

With reference to fig. 1 and fig. 2, in the embodiment of the present invention, the port of the power amplifier Die electrically connected to the output load 5 is electrically connected to the dc bias voltage source VDD through the radio frequency choke part TL, the power amplifier Die is packaged in the package part 1, and the package part 1 covers the radio frequency choke part TL, so that the connection relationship between the radio frequency choke part TL and the power amplifier Die is realized, the radio frequency signal is prevented from being transmitted to the dc bias voltage source VDD to affect the characteristics of the dc bias voltage source VDD, and the radio frequency bias circuit 2 is integrated in the package, thereby preventing the problem that the power amplifier Die module occupies a large-area printed circuit board due to the long bias line arranged on the printed circuit board by the radio frequency bias circuit 2, which is beneficial to reducing the size of the power amplifier module and improving the integration level of the.

Illustratively, as shown in fig. 2, the output load 5 may include an output matching network Z0 and a load impedance ZL, and the output matching network Z0 is used to provide a suitable load impedance for the power amplifier Die, so as to ensure that the power amplifier Die has good power amplifier power, efficiency, and linearity characteristics.

Alternatively, with reference to fig. 1 and fig. 2, the radio frequency choke part TL may be disposed in an area on the printed circuit board where the package part 1 is disposed, for example, the radio frequency choke part TL may be disposed on a surface of the area on the printed circuit board where the package part 1 is disposed, and the package part 1 is attached to the radio frequency choke part TL. Illustratively, the radio frequency choke part TL can be configured as a microstrip line, the radio frequency choke part TL formed by the microstrip line has a wide frequency band, high reliability and low manufacturing cost, the material forming the microstrip line can include copper, the copper line can be directly laid on the printed circuit board to form the radio frequency choke part TL, and the package part 1 packaged with the power amplifier Die is attached to the radio frequency choke part TL, namely, the copper line, so as to integrate the radio frequency bias circuit 2 inside the package, reduce the size of the power amplifier module, and improve the integration level of the printed circuit board.

Optionally, with reference to fig. 1 and fig. 2, the radio frequency choke part TL may also be attached to the package part 1, and similarly, the radio frequency choke part TL may be configured as a microstrip line, a material constituting the microstrip line may include copper, and the copper line may be directly attached to the package part 1, so as to integrate the radio frequency bias circuit 2 inside the package, reduce the size of the power amplifier module, and improve the integration level of the printed circuit board.

Alternatively, referring to fig. 1 and 2, the package component 1 may include a plurality of pads 3, the radio frequency choke component TL is disposed corresponding to an area where a portion of the pads 3 of the package component 1 is located, and the radio frequency choke component TL is electrically connected to the portion of the pads 3. Specifically, the package component 1 may be configured to attach to the radio frequency choke component TL through a portion of the pads 3, for example, in a direction perpendicular to the surface of the package component 1, and all the pads 3 of the package component 1 overlapping with the radio frequency choke component TL in fig. 2 are electrically connected to the radio frequency choke component TL. It should be noted that fig. 2 only shows the areas where the radio frequency choke component TL corresponds to the partial pads 3 on the upper side and the right side of the package component 1 by way of example, and the embodiment of the present invention does not limit the specific area where the radio frequency choke component TL corresponds to the partial pads 3 of the package component 1.

Optionally, with reference to fig. 1 and fig. 2, the radio frequency choke component TL may be arranged to extend along the arrangement direction of the partial pads 3, so as to reduce the influence of the radio frequency choke component TL on the area of the region where the corresponding partial pads 3 are arranged on the package component 1 while facilitating the realization of the electrical connection relationship between the radio frequency choke component TL and the corresponding partial pads 3, and also enable two ends of the radio frequency choke component TL to be respectively arranged corresponding to the two pads 3 to be electrically connected with the internal devices of the package component 1 through the corresponding pads 3.

Alternatively, in conjunction with fig. 1 and fig. 2, it may be configured that a resonant circuit 4 is further packaged in the package component 1, the resonant circuit 4 includes a resonant inductor LS and a resonant capacitor CS, a first end of the resonant inductor LS is electrically connected to the pad 3 corresponding to one end of the radio frequency choke component TL, a second end of the resonant inductor LS is electrically connected to a first end of the resonant capacitor CS, and a second end of the resonant capacitor CS is electrically connected to the fixed voltage end, where the second end of the resonant capacitor CS is exemplarily configured to be electrically connected to the ground terminal GND.

Alternatively, in conjunction with fig. 1 and fig. 2, the pad 3 corresponding to one end of the radio frequency choke part TL electrically connected to the first end of the resonant inductor LS may be electrically connected to the dc bias voltage source VDD, and the pad 3 corresponding to the other end of the radio frequency choke part TL is electrically connected to the drain D of the power amplifier Die.

Specifically, the power amplifier Die may include a GaN or GaAs hemt, in order to effectively filter the rf signal output from the drain D of the power amplifier Die to the output load 5 and prevent the rf signal from being transmitted to the dc bias voltage source VDD to affect the characteristics of the dc bias voltage source VDD, one end of the rf choke part TL needs to be electrically connected to the drain D of the power amplifier Die and the other end needs to be electrically connected to the dc bias voltage source VDD, the power amplifier Die is packaged in the package part 1, the dc bias voltage source VDD may be disposed in a region of the printed circuit board outside the region where the package part 1 is located, the rf choke part TL is disposed to extend along the arrangement direction of a portion of the pads 3 disposed corresponding to the rf choke part TL, and the rf choke part TL is disposed in the region where the pads 3 are disposed in the package part 1, that is, while the rf choke part TL is disposed inside the package part 1, the electric connection relationship between the radio frequency choke part TL and the power amplifier Die and the dc bias voltage source VDD is advantageously realized through the pad 3.

Alternatively, in conjunction with fig. 1 and fig. 2, the pad 3 corresponding to one end of the radio frequency choke part TL electrically connected to the drain D of the power amplifier Die may be arranged to be electrically connected to the drain D of the power amplifier Die through the bonding wire LS 2. Specifically, one end of the bonding wire LS2 may be tied to the pad 3 corresponding to the end of the rf choke part TL electrically connected to the drain D of the power amplifier Die, and the other end may be tied to the drain D of the power amplifier Die located inside the package part 1, so as to electrically connect the pad 3 corresponding to the end of the rf choke part TL electrically connected to the drain D of the power amplifier Die and the drain D of the power amplifier Die. In addition, the dc bias voltage source VDD may be disposed on the printed circuit board, and the rf choke part TL is electrically connected to the pad 3 corresponding to one end of the dc bias voltage source VDD, and may be directly electrically connected to the dc bias voltage source VDD through a copper wire disposed on the printed circuit board. It should be noted that fig. 2 only shows the shape of the radio frequency choke part TL by way of example, and the shape of the radio frequency choke part TL is not particularly limited in the embodiment of the present invention.

Specifically, the drain D of the power amplifier Die outputs the rf signal to the output load 5, and the rf signal is filtered by the rf choke TL to prevent the rf signal from being transmitted to the dc bias voltage source VDD and affecting the characteristics of the dc bias voltage source VDD. For example, the resonant circuit 4 may be configured to resonate at the frequency of the rf signal output by the drain D of the power amplifier Die, when the rf choke part TL cannot completely filter the rf signal passing through the rf choke part TL, the resonant circuit 4 is configured to enable the rf signal to be transmitted to one end of the resonant circuit 4, that is, when the resonant inductor LS is electrically connected to one end of the rf choke part TL, the resonant circuit 4 short-circuits the rf signal to a fixed voltage end, such as the ground end GND, so as to further avoid the problem that the characteristic of the dc bias voltage source VDD is affected by the transmission of the rf signal to the dc bias voltage source VDD.

The pad 3 corresponding to one end of the radio frequency choke component TL electrically connected to the first end of the resonant inductor LS is electrically connected to the dc bias voltage source VDD, so that for the radio frequency signal output by the drain D of the power amplifier Die, the resonant inductor LS and the resonant capacitor CS form the resonant circuit 4 to form two parallel filter branches with the radio frequency choke component TL, thereby further avoiding the problem that the characteristic of the dc bias voltage source VDD is affected by the transmission of the radio frequency signal to the dc bias voltage source VDD.

Optionally, the resonant inductor LS may comprise a bond wire LS1, and/or the resonant capacitor CS may comprise IPD. Specifically, an IPD (integrated Passive Device) implements a capacitor inside a chip, the IPD includes electronic elements such as a capacitor and an inductor, which can equivalently serve as a resonant capacitor CS, the resonant inductor LS includes a bonding wire LS1, that is, the bonding wire LS1 forms a resonant inductor LS, one end of the bonding wire LS1 is electrically connected to a dc bias voltage source VDD, that is, the rf choke part TL is electrically connected to a pad 3 corresponding to one end of the dc bias voltage source VDD. In addition, in consideration of higher cost of IPD, the same frequency range rf bias circuit 2 can reuse the same IPD.

Optionally, the package component 1 may be a QFN package component, where the QFN (Quad Flat No-lead package) package component belongs to one of surface mount packages, the QFN package is a leadless package, the QFN package component is square or rectangular, a large-area exposed pad is disposed at a central position of a bottom of the package component for conducting heat, and electrically conductive pads for achieving electrical connection are disposed around a periphery of the large pad, that is, the pad 3 mentioned in the above embodiment. The package component 1 may also be a DFN package component, and a difference between a DFN (Dual Flat No-lead package) package component and a QFN package component is that the DFN package component only has conductive pads for realizing electrical connection on two sides of the package component 1, and the package component 1 may also adopt other package forms, which is not limited in the embodiment of the present invention.

It should be noted that the drawings of the embodiments of the present invention only show the sizes of the components by way of example, and do not represent the actual sizes of the components in the package structure of the rf bias circuit.

The radio frequency bias circuit packaging structure provided by the embodiment of the invention comprises a packaging component and a radio frequency bias circuit, wherein a power amplifier is packaged in the packaging component, the radio frequency bias circuit comprises a radio frequency choke component, a port of an output load electrically connected with the power amplifier is electrically connected to a direct current bias voltage source through the radio frequency choke component, and the packaging component covers the radio frequency choke component.

It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments illustrated herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.