阅读说明：本技术 边缘自封闭的量子点膜 (Self-sealed edge quantum dot film ) 是由 罗培栋 王立超 魏俊峰 于 2020-07-20 设计创作，主要内容包括：边缘自封闭的量子点膜,包括量子点层,在量子点层的上下表面均设有水氧隔绝层,其特征在于所述量子点层由下列原料组成：改性聚丙烯酸酯20-30质量份、量子点10-20质量份、分散剂0.5-1.5质量份,流平剂0.5-1.5质量份,光引发剂0.5-1.5质量份,溶剂20-30质量份；其中所述的改性聚丙烯酸酯进行交联改性,在该聚丙烯酸酯链段中引入交联基团。在量子点膜被切断以后,在紫外灯照射下,量子点层中聚丙烯酸酯支链进一步交联形成高交联密度的互穿网络结构,从而将量子点层封闭,将量子点与水、氧隔离开来,从而保证其使用寿命,边缘自封闭过程不受到膜边缘轮廓的限制,适用于复杂的膜边缘结构或定位孔一类的膜内部边缘。(The edge self-sealing quantum dot film comprises a quantum dot layer, wherein the upper surface and the lower surface of the quantum dot layer are respectively provided with a water-oxygen isolating layer, and the edge self-sealing quantum dot film is characterized in that the quantum dot layer is composed of the following raw materials: 20-30 parts of modified polyacrylate, 10-20 parts of quantum dots, 0.5-1.5 parts of dispersant, 0.5-1.5 parts of flatting agent, 0.5-1.5 parts of photoinitiator and 20-30 parts of solvent; wherein the modified polyacrylate is subjected to crosslinking modification, and crosslinking groups are introduced into the polyacrylate chain segment. After the quantum dot film is cut off, polyacrylate branched chains in the quantum dot layer are further crosslinked to form an interpenetrating network structure with high crosslinking density under the irradiation of an ultraviolet lamp, so that the quantum dot layer is sealed, the quantum dots are isolated from water and oxygen, the service life of the quantum dot layer is ensured, the edge self-sealing process is not limited by the edge profile of the film, and the quantum dot film is suitable for the inner edges of films such as complex film edge structures or positioning holes.)

1. The edge self-sealing quantum dot film comprises a quantum dot layer, wherein the upper surface and the lower surface of the quantum dot layer are respectively provided with a water-oxygen isolating layer, and the edge self-sealing quantum dot film is characterized in that the quantum dot layer is composed of the following raw materials: 20-30 parts of modified polyacrylate, 10-20 parts of quantum dots, 0.5-1.5 parts of dispersant, 0.5-1.5 parts of flatting agent, 0.5-1.5 parts of photoinitiator and 20-30 parts of solvent;

The modified polyacrylate is subjected to crosslinking modification, a crosslinking group is introduced into a polyacrylate chain segment, and the crosslinking group is a multi-double bond type crosslinking monomer, or a nitrogen substituted acrylamide derivative type crosslinking monomer, or a carboxylic acid type crosslinking monomer, or a hydroxyl type crosslinking monomer, or an epoxy type crosslinking monomer, or a carbonyl type crosslinking monomer.

2. The edge self-sealing quantum dot film of claim 1, wherein: the monomer for synthesizing the polyacrylate is butyl acrylate BA, or ethyl acrylate EA, or n-octyl acrylate OA, or isooctyl acrylate 2-EHA, or isooctyl methacrylate 2-EHMA, or dodecyl methacrylate LMA, or methyl acrylate MA, or methyl methacrylate MMA, or ethyl methacrylate EMA, or n-butyl methacrylate BMA, or vinyl acetate VAc, or styrene ST, or acrylic acid AA.

3. The edge self-sealing quantum dot film of claim 1, wherein: the dispersing agent is vinyl bis stearamide, or glyceryl monostearate, or glyceryl tristearate, or liquid paraffin, or zinc stearate, or polyethylene wax.

4. The edge self-sealing quantum dot film of claim 1, wherein: the leveling agent is polydimethylsiloxane, or polymethylphenylsiloxane, or organopolysiloxane with a comb-shaped structure.

5. The edge self-sealing quantum dot film of claim 1, wherein: the photoinitiator is tetramethylpiperidine oxynitride, or 2-hydroxy-2-methyl-1-phenyl-1-acetone, or 1-hydroxycyclohexyl phenyl ketone, or 2-hydroxy-2-methyl-p-hydroxyethyl ether phenyl acetone-1.

6. The edge self-sealing quantum dot film of claim 1, wherein: the solvent is toluene, or ethylbenzene, or ethyl acetate, or ethanol, or xylene.

7. The edge self-sealing quantum dot film of claim 1, wherein: the solvent is toluene, or ethylbenzene, or ethyl acetate, or ethanol, or xylene.

Technical Field

The invention relates to a quantum dot film with self-closed edges.

Background

The quantum dot film is applied to the liquid crystal display device, so that the color gamut of the liquid crystal display device is improved to more than 100% of NTSC, and the accuracy and the color vividness of color display are obviously improved. According to the existing production technology, the quantum dot film is manufactured in a roll-to-roll manner, the quantum dot film needs to be cut according to the sizes of different devices before being installed on a display device, and after the quantum dot film is cut, the quantum dot film at the edge of the quantum dot is exposed, so that two problems are caused: 1. the quantum dots at the edge of the film may fall off and cause environmental pollution 2, the quantum dots at the edge of the film are directly exposed in a water-oxygen environment, the fluorescence at the edge of the film is quenched and darkened, and water and oxygen even further enter the quantum dot film to influence the service life of the quantum dot film.

In order to solve the above problems, chinese patent CN 104848168A changes the production flow of the quantum dot film, changes the continuous coating of the quantum dot glue solution into the intermittent coating, coats the quantum dot glue solution in the area enclosed by the edge sealing glue, and finally cuts the edge sealing glue area. Compared with the prior art, the technical scheme has the following defects: (1) the coating equipment needs to be updated; (2) poor intermittent coating uniformity; (3) the coating process of the edge sealing glue is added; (4) the film with one quantum dot size can only correspond to one cutting size, and the size adaptability of the product is poor; (5) positioning holes and other complex edge conditions cannot be used.

Chinese patent CN 104501043A adopts coating adhesive on the edge of the quantum dot film to cover the edge of the quantum dot, and compared with the prior art, the defects of the technical scheme are: (1) the process steps are increased, and the efficiency is reduced; (2) the quantum dot film is thin, and the construction on the edge is difficult.

Chinese patent CN 106189826 a adds liquid microcapsule in the quantum dot layer, after the quantum dot film is cut, the liquid in the liquid microcapsule covers the cross section by the surface tension of the liquid, and forms a film to block water and oxygen under normal temperature, heating and ultraviolet irradiation. Compared with the prior art, the technical scheme has the following defects: (1) a large amount of liquid microcapsules need to be added into the quantum dot film, and the thickness of the quantum dot film is increased under the same brightness; (2) liquid microcapsules can increase production costs and increase process difficulties.

Disclosure of Invention

In order to overcome the defects of the edge self-sealing quantum dot film in the prior art, the invention provides the edge self-sealing quantum dot film with simple structure and lower cost.

The technical scheme for solving the technical problem is as follows: the edge self-sealing quantum dot film comprises a quantum dot layer, wherein the upper surface and the lower surface of the quantum dot layer are respectively provided with a water-oxygen isolating layer, and the edge self-sealing quantum dot film is characterized in that the quantum dot layer is composed of the following raw materials: 20-30 parts of modified polyacrylate, 10-20 parts of quantum dots, 0.5-1.5 parts of dispersant, 0.5-1.5 parts of flatting agent, 0.5-1.5 parts of photoinitiator and 20-30 parts of solvent;

the modified polyacrylate is subjected to crosslinking modification, a crosslinking group is introduced into a polyacrylate chain segment, and the crosslinking group is a multi-double bond type crosslinking monomer, or a nitrogen substituted acrylamide derivative type crosslinking monomer, or a carboxylic acid type crosslinking monomer, or a hydroxyl type crosslinking monomer, or an epoxy type crosslinking monomer, or a carbonyl type crosslinking monomer.

Preferably, the monomers for the synthesis of said polyacrylate are butyl acrylate BA, or ethyl acrylate EA, or n-octyl acrylate OA, or isooctyl acrylate 2-EHA, or isooctyl methacrylate 2-EHMA, or dodecyl methacrylate LMA, or methyl acrylate MA, or methyl methacrylate MMA, or ethyl methacrylate EMA, or n-butyl methacrylate BMA, or vinyl acetate VAc, or styrene ST, or acrylic acid AA.

Preferably, the dispersant is vinyl bis stearamide, or glyceryl monostearate, or glyceryl tristearate, or liquid paraffin, or zinc stearate, or polyethylene wax.

Preferably, the leveling agent is polydimethylsiloxane, polymethylphenylsiloxane or organopolysiloxane with a comb-shaped structure.

Preferably, the photoinitiator is tetramethylpiperidine nitroxide, or 2-hydroxy-2-methyl-1-phenyl-1-propanone, or 1-hydroxycyclohexylphenylmethanone, or 2-hydroxy-2-methyl-p-hydroxyethyl ether phenylpropanone-1.

Preferably, the solvent is toluene, or ethylbenzene, or ethyl acetate, or ethanol, or xylene.

The invention has the beneficial effects that: 1. the upper surface and the lower surface of the quantum dot layer are in contact with the water-oxygen isolating layer, and no bonding layer is arranged between the water-oxygen isolating layer and the quantum dot layer, so that the process steps are reduced, and the thickness of the quantum dot layer is reduced. 2. After the quantum dot film is cut off, polyacrylate branched chains in the quantum dot layer are further crosslinked to form an interpenetrating network structure with high crosslinking density under the irradiation of an ultraviolet lamp, so that the quantum dot layer is sealed, the quantum dots are isolated from water and oxygen, the service life of the quantum dot layer is ensured, the edge self-sealing process is not limited by the edge profile of the film, and the quantum dot film is suitable for the inner edges of films such as complex film edge structures or positioning holes.

Drawings

Fig. 1 is a schematic diagram of the high crosslinking of quantum dot layers under uv light.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.