Extensible infrared detector and preparation method thereof

文档序号:1089117 发布日期:2020-10-20 浏览:21次 中文

阅读说明:本技术 一种可延展红外探测器及其制备方法 (Extensible infrared detector and preparation method thereof ) 是由 陈华民 张�诚 王军 于 2020-07-16 设计创作,主要内容包括:本发明涉及一种可延展红外探测器及其制备方法,包括从下到上依次设置的可延展柔性衬底、聚酰亚胺薄膜、石墨烯沟道阵列,以及可延展柔性封装;所述石墨烯沟道两端均制有电极。本发明红外探测器阵列具有可延展柔性,可以贴合在不同形状表面或变形成焦平面阵列,适用于特殊测试环境;制备方法简单,易于控制形貌并实现大面积阵列制备,同时褶皱石墨烯具有较高的红外响应。(The invention relates to an extensible infrared detector and a preparation method thereof, wherein the extensible infrared detector comprises an extensible flexible substrate, a polyimide film, a graphene channel array and extensible flexible packaging which are sequentially arranged from bottom to top; electrodes are arranged at two ends of the graphene channel. The infrared detector array has extensible flexibility, can be attached to surfaces with different shapes or deformed into a focal plane array, and is suitable for special test environments; the preparation method is simple, the morphology is easy to control, large-area array preparation is realized, and meanwhile, the folded graphene has high infrared response.)

1. An extensible infrared detector is characterized by comprising an extensible flexible substrate, a polyimide film, a graphene channel array and extensible flexible packaging, wherein the extensible flexible substrate, the polyimide film, the graphene channel array and the extensible flexible packaging are sequentially arranged from bottom to top; electrodes are arranged at two ends of the graphene channel.

2. The malleable infrared detector, as claimed in claim 1, wherein: the graphene channel and the electrode are folded graphene channels and folded electrodes.

3. The malleable infrared detector, as claimed in claim 1, wherein: the extensible flexible substrate is one or more of polymethyl silicone resin, amino silicone resin and fluorosilicone resin.

4. A preparation method of an extensible infrared detector is characterized by comprising the following steps;

step S1, growing an extensible flexible substrate on the substrate and performing pre-stretching;

step S2, preparing a polyimide film on a pre-stretched extensible flexible substrate;

step S3, preparing a graphene channel array on the polyimide film by a laser direct writing method;

step S4, preparing electrodes at two ends of the graphene channel;

step S5, releasing the pre-stretching strain to form a folded graphene channel and a folded electrode;

and step S6, performing extensible flexible packaging on the detector.

5. The method for preparing a malleable infrared detector, according to claim 4, wherein: the pre-stretching is unidirectional or bidirectional, and the ratio of the length after stretching to the original length is any value between 1 and 10.

6. The method for preparing a malleable infrared detector, according to claim 4, wherein: the PI film is prepared by spin coating, drop coating or a method adopting a commercial PI adhesive tape, and the thickness of the PI film is in a range of 0.05mm-1 mm.

7. The method for preparing a malleable infrared detector, according to claim 4, wherein:

graphene channel length be 10um-1000um, the width be 10um-200um, graphene thickness is between 1um-1 mm.

8. The method for preparing a malleable infrared detector, according to claim 4, wherein: the electrode material is a metal or alloy electrode, wherein the metal comprises gold, silver, platinum, palladium, aluminum, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; the alloy includes an aluminum alloy, a titanium alloy, a magnesium alloy, a beryllium alloy, a copper alloy, a zinc alloy, a manganese alloy, a nickel alloy, a lead alloy, a tin alloy, a cadmium alloy, a bismuth alloy, an indium alloy, a gallium alloy, a tungsten alloy, a molybdenum alloy, a niobium alloy, or a tantalum alloy.

9. The method for preparing a malleable infrared detector, according to claim 4, wherein: the preparation method of the electrode comprises two parts of metal deposition and photoetching, wherein the metal deposition method is an electron beam evaporation method, a magnetron sputtering method or a chemical vapor deposition method.

10. The method for preparing the extensible infrared detector as claimed in claim 5, wherein the step S5 is specifically as follows: if the pre-stretching is unidirectional, releasing unidirectional pre-strain; if the pre-stretching is bidirectional, the bidirectional pre-strain is released simultaneously or the unidirectional pre-strain is released first and then the pre-strain in the other direction is released.

Technical Field

The invention relates to the field of infrared detection, in particular to an extensible infrared detector and a preparation method thereof.

Background

Photoelectric detectors have become important devices in various applications such as night vision, medical imaging, environmental monitoring and the like, and although traditional semiconductor detectors have stable performance, the preparation process is complex and the cost is high. The improvement of the nano material and the preparation technology is beneficial to reducing the preparation cost of the device, simplifying the process flow and improving the performance of the device.

The graphene has ultrahigh carrier mobility and high mechanical strength, more importantly, the band gap of the graphene is zero, so that the graphene has an ultra-wide detection range, and the 'long wave limit' of the traditional detector is broken through. Meanwhile, due to the continuous expansion of the application field and the rise of flexible electronics, the infrared detector has great potential in the wearable field, and higher requirements on the extensibility and the flexibility of the infrared detector are also provided.

Disclosure of Invention

In view of the above, the present invention aims to provide an extensible infrared detector and a method for manufacturing the same, which can adapt to an irregular shape through deformation, prepare a focal plane array, and the like, and have a wide market prospect in the field of infrared detection in a special environment and the field of flexible electronics.

In order to achieve the purpose, the invention adopts the following technical scheme:

an extensible infrared detector comprises an extensible flexible substrate, a polyimide film, a graphene channel array and extensible flexible packaging, wherein the extensible flexible substrate, the polyimide film, the graphene channel array and the extensible flexible packaging are sequentially arranged from bottom to top; electrodes are arranged at two ends of the graphene channel.

Further, the graphene channel and the electrode are a folded graphene channel and a folded electrode.

Further, the extensible flexible substrate is one or more of polymethyl silicone resin, amino silicone resin and fluorosilicone resin.

A preparation method of an extensible infrared detector comprises the following steps;

step S1, growing an extensible flexible substrate on the substrate and performing pre-stretching;

step S2, preparing a polyimide film on a pre-stretched extensible flexible substrate;

step S3, preparing a graphene channel array on the polyimide film by a laser direct writing method;

step S4, preparing electrodes at two ends of the graphene channel;

step S5, releasing the pre-stretching strain to form a folded graphene channel and a folded electrode;

and step S6, performing extensible flexible packaging on the detector.

Further, the pre-stretching is unidirectional or bidirectional, and the ratio of the length after stretching to the original length is any value between 1 and 10.

Further, the PI film is prepared by spin coating, drop coating or a method adopting a commercial PI adhesive tape, and the thickness of the PI film ranges from 0.05mm to 1 mm.

Further, graphene channel length be 10um-1000um, the width be 10um-200um, graphene thickness is between 1um-1 mm.

Further, the electrode material is a metal or alloy electrode, wherein the metal comprises gold, silver, platinum, palladium, aluminum, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; the alloy includes an aluminum alloy, a titanium alloy, a magnesium alloy, a beryllium alloy, a copper alloy, a zinc alloy, a manganese alloy, a nickel alloy, a lead alloy, a tin alloy, a cadmium alloy, a bismuth alloy, an indium alloy, a gallium alloy, a tungsten alloy, a molybdenum alloy, a niobium alloy, or a tantalum alloy.

Furthermore, the electrode preparation method comprises two parts of metal deposition and photoetching, and the metal deposition method is electron beam evaporation, magnetron sputtering or chemical vapor deposition.

Further, the step S5 is specifically: if the pre-stretching is unidirectional, releasing unidirectional pre-strain; if the pre-stretching is bidirectional, the bidirectional pre-strain is released simultaneously or the unidirectional pre-strain is released first and then the pre-strain in the other direction is released.

Compared with the prior art, the invention has the following beneficial effects:

the invention has the advantages of extending flexibility, being capable of being attached to surfaces with different shapes or being deformed into a focal plane array, and being suitable for special test environments; the preparation method is simple, the morphology is easy to control, large-area array preparation is realized, and meanwhile, the folded graphene has high infrared response.

Drawings

Fig. 1 is a pre-stretched extensible flexible substrate proposed by the present invention, exemplified by copolyester on a silicon support layer (Ecoflex);

FIG. 2 is a block diagram of a step 2 process in an embodiment in accordance with the invention;

FIG. 3 is a block diagram of a process after step 3 in an embodiment of the present invention;

FIG. 4 is a block diagram of a process of step 4 according to an embodiment of the present invention;

FIG. 5 is a block diagram of a process of step 5 in an embodiment of the present invention;

FIG. 6 is a side view of a block diagram after processing at step 6 in an embodiment of the invention;

in the figure, 1-extensible flexible substrate, 2-polyimide film, 3-graphene channel array, 4-electrode.

Detailed Description

The invention is further explained below with reference to the drawings and the embodiments.

Referring to fig. 6, the present invention provides an extended infrared detector, including an extended flexible substrate, a polyimide film, a graphene channel array, and an extended flexible package, which are sequentially disposed from bottom to top; electrodes are arranged at two ends of the graphene channel.

In this embodiment, preferably, the extensible flexible substrate may be one or more of polymethyl silicone resin, amino silicone resin, and fluorosilicone resin.

In this embodiment, the pre-stretching may be unidirectional or bidirectional, and the pre-stretching degree (ratio of the stretched length to the original length) is an arbitrary value between 1 and 10.

In this embodiment, the PI film may be prepared by spin coating, drop coating, or the like, or may be a commercial PI tape, and the thickness of the PI film ranges from 0.05mm to 1 mm.

In this embodiment, preferably, the length of the graphene channel is 10um to 1000um, the width is 10um to 200um, the laser power of the laser direct writing is 0 to 20W, and the thickness of the graphene is 1um to 1 mm.

In this embodiment, preferably, the electrode material is a metal or alloy electrode, where the metal includes gold, silver, platinum, palladium, aluminum, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten, or vanadium; the alloy includes an aluminum alloy, a titanium alloy, a magnesium alloy, a beryllium alloy, a copper alloy, a zinc alloy, a manganese alloy, a nickel alloy, a lead alloy, a tin alloy, a cadmium alloy, a bismuth alloy, an indium alloy, a gallium alloy, a tungsten alloy, a molybdenum alloy, a niobium alloy, or a tantalum alloy.

In this embodiment, preferably, the electrode preparation method includes two parts of metal deposition and photolithography, and the metal deposition method may be electron beam evaporation, magnetron sputtering, or chemical vapor deposition.

In this embodiment, preferably, the releasing of the prestress can be divided into two cases: if the pre-stretching is unidirectional, releasing unidirectional pre-strain; if the pre-stretching is bidirectional, the bidirectional pre-strain can be released simultaneously or the unidirectional pre-strain is released first and then the pre-strain in the other direction is released.

Referring to fig. 1 to 5, in the present embodiment, there is further provided a method for manufacturing a malleable infrared detector, including the following steps;

step S1 solution A and solution B of Ecoflex are mixed according to the volume ratio of 1: 1, uniformly stirring, then spin-coating by a spin coater, rotating at 2000 rpm for 10 seconds, then placing in an oven, and heating at 120 ℃ for 2 hours to form an Ecoflex film. A1.5 cm long, 1 cm wide Ecoflex film was cut and stretched 400% in the length direction, after which the length was 6 cm long and 1 cm wide. The stretched Ecoflex was fixed on a silicon substrate.

Step S2, spin-coating a layer of PI solution on a pre-stretched extensible flexible substrate, rotating for 15 seconds at 3000 r/min, heating for 20 minutes on a 120-DEG C hot plate, and naturally cooling to form a PI film;

and S3, adjusting appropriate laser power and time, irradiating the PI position with laser to form graphene, preparing a graphene channel array, wherein the length-width ratio of the graphene is 150um/30um, and removing the rest PI film by using acetone.

Step S4, firstly, spin-coating a layer of photoresist AZ5214 on the surface of the PI, exposing and developing the photoresist, forming a photoetching pattern on the surface of the PI, sputtering Ti/Au metal electrodes by a magnetron sputtering process, wherein the thicknesses of the Ti/Au metal electrodes are respectively 5nm/50nm, then immersing a sample in acetone to remove the photoresist, and forming metal electrodes at two ends of graphene.

And step S5, lifting the extensible flexible substrate from the silicon substrate, slowly releasing the pre-strain, returning to the original length, standing, forming folded graphene by the graphene under the strain, and forming a folded electrode by the electrode.

And step S6, firstly, completing wiring on the electrode through gold wire ball bonding, spin-coating a layer of Ecoflex solution on the uppermost layer, and heating and curing for 2 hours on a 120-degree hot plate to complete the extensible flexible packaging.

The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.

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