Method of forming a pattern on a substrate

文档序号:1114594 发布日期:2020-09-29 浏览:14次 中文

阅读说明:本技术 在衬底上形成图案的方法 (Method of forming a pattern on a substrate ) 是由 李泰文 杨拥平 于 2019-03-20 设计创作,主要内容包括:本发明公开了一种在衬底上形成图案的方法,包括如下步骤:(1)提供一透光载体,在透光载体的表面铺设固定带;(2)将一衬底的第一表面固定在固定带上;(3)在衬底的第二表面附着一光刻胶层,第一表面与第一表面相对;(4)自透光载体至光刻胶层的方向进行曝光,从而在光刻胶层上形成保留区域和可去除区域;(5)显影光刻胶层从而除去可去除区域,光刻胶层的保留区域构成待光刻图案;(6)蚀刻衬底的第二表面以除去部分衬底材料和光刻胶材料,从而形成光刻图案。该在衬底上形成图案的方法利用光的边界效应限定出需要刻蚀的图案的边界范围,简化了其制造过程且降低了成本。(The invention discloses a method for forming a pattern on a substrate, which comprises the following steps: (1) providing a light-transmitting carrier, and paving a fixing band on the surface of the light-transmitting carrier; (2) fixing a first surface of a substrate on a fixing tape; (3) attaching a photoresist layer to a second surface of the substrate, wherein the first surface is opposite to the first surface; (4) exposing the light-transmitting carrier to the photoresist layer to form a reserved area and a removable area on the photoresist layer; (5) developing the photoresist layer to remove the removable region, the remaining region of the photoresist layer constituting a pattern to be lithographed; (6) the second surface of the substrate is etched to remove portions of the substrate material and the photoresist material to form a photolithographic pattern. The method for forming patterns on the substrate limits the boundary range of the patterns to be etched by using the boundary effect of light, simplifies the manufacturing process and reduces the cost.)

1. A method of forming a pattern on a substrate, comprising the steps of:

(1) providing a light-transmitting carrier, and paving a fixing band on the surface of the light-transmitting carrier;

(2) fixing a first surface of a substrate on the fixing tape;

(3) attaching a photoresist layer to a second surface of the substrate, the second surface being opposite to the first surface;

(4) exposing in a direction from the light-transmitting carrier to the photoresist layer, thereby forming a reserved region and a removable region on the photoresist layer;

(5) developing the photoresist layer to remove the removable region, the remaining region of the photoresist layer constituting a pattern to be lithographed; and

(6) etching the second surface of the substrate to remove portions of the substrate material and the photoresist material to form the pattern.

2. The method of forming a pattern on a substrate of claim 1, wherein: further comprising the step of removing the photoresist remaining on the substrate.

3. The method of forming a pattern on a substrate of claim 1, wherein: the light-transmitting carrier is a transparent carrier.

4. The method of forming a pattern on a substrate of claim 1, wherein: the fixing band is transparent adhesive tape.

5. The method of forming a pattern on a substrate according to claim 1, wherein the substrate is plural in number.

6. The method of forming a pattern on a substrate according to claim 5, wherein a plurality of said substrates are fixed on said fixing tape in a predetermined gap arrangement.

7. The method of forming a pattern on a substrate according to claim 1, wherein the substrate is provided with a baffle plate at both sides, and the baffle plate and the substrate are fixed on the fixing tape in a predetermined gap arrangement.

8. The method of forming a pattern on a substrate of claim 1, wherein: the photoresist layer is a dry negative photoresist layer.

9. The method of forming a pattern on a substrate of claim 1, wherein: and a reflection control layer is arranged above the photoresist layer.

10. The method of forming a pattern on a substrate of claim 1, wherein: and (4) in the step (3), the second surface of the substrate is an air bearing surface of the magnetic head.

11. The method of forming a pattern on a substrate of claim 1, wherein: and (4) performing exposure by using UV scattered light.

Technical Field

The present invention relates to an etching process of a semiconductor magnetic head manufacturing technology, and more particularly, to a method of forming a pattern on a substrate.

Background

In the field of production and manufacture of devices such as conductors, semiconductor devices, and magnetic head sliders for magnetic disk drive devices, etching processes are indispensable. The photoetching process is a process of transferring a pattern onto a substrate by utilizing a geometric figure on a mask through photochemical reaction, and mainly comprises the steps of transferring the figure of the mask to a photoresist and transferring the photoresist figure to the surface of the substrate. The photoetching process comprises photoresist, a mask and a photoetching machine, and mainly comprises the steps of forming a photoresist film with uniform thickness and no defects on the surface; irradiating light through the mask plate to enable the irradiated photoresist to have chemical reaction; dissolving the photoresist in the exposed area and the non-exposed area to different degrees during development; after the final etch, the photoresist is removed from the surface.

Generally, there are two types of photoresists: positive photoresists and negative photoresists. After the positive photoresist is exposed, the material under illumination is removed; negative-tone photoresists are characterized as opposite to positive-tone photoresists in that the exposed negative-tone photoresist will remain on the surface and only the unexposed portions will be removed upon development.

Fig. 1-2 all show a photolithography method for forming a pattern on a surface using a positive photoresist. Referring to fig. 1, the photolithography process includes the steps of: laying a layer of fixing belt 101 on the substrate 100, and fixing a product 103 to be subjected to photoetching and a baffle plate 102 through the fixing belt 101; filling materials 104 are injected between the products 103, and then the surface of the products is flattened; forming a layer of positive photoresist 105 on the planarized surface; exposing the photoresist 105 to light 107 through a predetermined mask 106, and then moving the mask 106 left and right to expose a plurality of places on the photoresist 105; finally, the photoresist 105 is developed to remove the photoresist 105 in the exposed region, thereby forming a photoresist pattern on the planarized surface. Subsequently, etching is performed according to the photoresist pattern, the photoresist is removed, and the filling material is removed (this step is not shown).

As described above, in the photolithography process for forming a pattern on a surface, surface planarization and alignment of the pattern are important, resulting in complication of the manufacturing flow. Once the surface is not uniform, the thickness of the photoresist is not uniform to form a defective photoresist film, and if alignment and exposure fail, the precise shape and size of the pattern cannot be determined, the entire process needs to be reworked, and more seriously, the product will be damaged, thereby causing a sharp increase in the overall cost. Moreover, when the etching is completed, the sidewall of the product is easily damaged when the filling material is removed.

Therefore, there is an urgent need for a method of forming a pattern on a substrate that is cost-effective and simple and efficient.

Disclosure of Invention

The present invention is directed to a method of forming a pattern on a substrate, which defines a boundary range of a pattern to be etched using a boundary effect of light, simplifies a manufacturing process thereof, and reduces costs.

In order to achieve the above object, the present invention provides a method of forming a pattern on a substrate, comprising the steps of: (1) providing a light-transmitting carrier, and paving a fixing band on the surface of the light-transmitting carrier;

(2) fixing a first surface of a substrate on a fixing tape;

(3) attaching a photoresist layer to a second surface of the substrate, the second surface being opposite to the first surface;

(4) exposing the light-transmitting carrier to the photoresist layer to form a reserved area and a removable area on the photoresist layer;

(5) developing the photoresist layer to remove the removable region, the remaining region of the photoresist layer constituting a pattern to be lithographed; and

(6) the second surface of the substrate is etched to remove portions of the substrate material and the photoresist material to form a pattern.

In the conventional photolithography method, surface planarization processing and pattern alignment are required, which causes complexity of the method and increases the number of failures, and in addition, a mask and a mask alignment lithography machine and the like are required during exposure, which increases a lot of costs. Compared with the prior art, the method for forming the pattern on the substrate has the advantages that in the exposure process, the light generates the boundary effect along the boundary of the substrate, the boundary and the size of the pattern are accurately limited by the boundary effect of the light, the precise alignment and the use of the mask are not needed in the exposure process, the manufacturing process is simplified, the failure times are reduced, the mask and the mask are not needed to be aligned with a photoetching machine, and the instrument cost is reduced; by utilizing the boundary effect of light, filling materials and surface planarization treatment are not needed, the manufacturing process is simplified, the material cost is reduced, and the risk of damaging the side wall of the substrate due to the removal of the filling materials after the manufacturing is finished is avoided.

Preferably, the method of forming a pattern on a substrate further comprises the step of removing the photoresist remaining on the substrate.

Preferably, the light-transmitting carrier is a transparent carrier, and the transparent carrier ensures excellent transparency and good light transmittance, and is beneficial to light projection in the exposure process.

Preferably, the fixing tape is a transparent adhesive tape, and the substrate is fixed by the fixing tape, and the transparent adhesive tape can fix the substrate and also contribute to projection of light during exposure, so as to ensure uniform light transmission.

Preferably, there are multiple substrates, and multiple substrates are performed simultaneously to improve manufacturing efficiency.

Specifically, a plurality of substrates are arranged and fixed on the fixing belt at preset gaps, and light passes through the gaps among the substrates and reaches the side edge of the second surface of the substrate to generate a boundary effect, so that the boundary range of a pattern to be subjected to photoetching is determined.

Preferably, baffles are arranged on two sides of the substrate, the baffles and the substrate are arranged and fixed on the fixing belt at preset intervals, light passes through the gaps between the substrate and the baffles and between the substrate and the baffle and reaches the side edge of the second surface of the substrate, and the baffles can absorb unnecessary scattered light. It is understood that the number of the substrate may be one, two baffles are provided on both sides of the substrate, and a certain distance is provided between the substrate and the baffles.

Preferably, the photoresist layer is a dry negative photoresist layer, wherein exposed portions of the negative photoresist remain on the surface after exposure, wherein unexposed portions are removed during development, and wherein the dry negative photoresist layer is attached to the second surface of the substrate without damaging the second surface and is more easily removed.

Preferably, a reflection control layer is arranged above the photoresist layer, so that unnecessary transmission light is absorbed by the reflection control layer, the reflection of light is weakened, the effect of a boundary effect is improved, and the boundary range of the pattern to be etched is accurately limited.

Specifically, the second surface of the substrate in step (3) is an air bearing surface of the magnetic head.

Preferably, the step (4) is performed by using UV scattered light, and when the sidewall of the substrate is irregular, the scattered light is used to help the light reach the boundary of the substrate accurately, so as to avoid the light from being projected inaccurately due to the influence of the sidewall of the substrate.

Drawings

Fig. 1 is a schematic view of a conventional method of forming a pattern on a substrate surface using a positive photoresist.

Fig. 2 is a top view of the conventional method of forming a pattern on a substrate surface using a positive photoresist of fig. 1.

FIG. 3 is a schematic diagram of a method of forming a pattern on a substrate surface in accordance with one embodiment of the present invention.

Fig. 4 is a top view of the method of fig. 3 for forming a pattern on a surface of a substrate.

FIG. 5 is a pattern formed prior to the addition of a reflection control layer using the method of forming a pattern on a substrate of the present invention.

FIG. 6 is a pattern formed after adding a reflection control layer using the method of forming a pattern on a substrate of the present invention.

Detailed Description

To explain technical contents, structural features and effects of the present invention in detail, the following detailed description is given with reference to the embodiments in conjunction with the accompanying drawings, in which like reference numerals denote like elements.

Referring to fig. 3 and 4, a preferred embodiment of the method of forming a pattern on a substrate according to the present invention will be described in detail below, taking a negative photoresist as an example.

Firstly, a light-transmitting carrier 200 is provided, then a layer of fixing tape 201 is laid on the surface of the light-transmitting carrier 200, then the first surface 203a of the substrate 203 is fixed on the fixing tape 201, and then the photoresist layer 205 is attached on the second surface 203b of the substrate 203. Specifically, the second surface 203b is opposite to the first surface 203a, i.e., the first surface 203a of the substrate is a lower surface of the substrate, and the second surface 203b of the substrate is an upper surface of the substrate.

Specifically, the light-transmitting carrier 200 is a transparent carrier with uniform thickness, has good light-transmitting performance, and can be an inorganic glass plate or an organic glass plate; the fixing tape 201 is a transparent adhesive tape, has a uniform thickness, and can fix the substrate 203 and ensure good light transmittance, but is not limited to a transparent adhesive tape, for example, an adhesive layer is attached to the light-transmitting carrier 200, as long as the substrate 203 can be fixed. Preferably, the substrates 203 are fixed on the fixing tape 201 in a predetermined gap 204 arrangement at a time of fixing the plurality of substrates 203, so that light is transmitted to generate a boundary effect along the edge of the second surface 203b of the substrate 203, and the plurality of substrates 203 are simultaneously performed to improve the manufacturing efficiency. Of course, the number of the substrate 203 may be one, and the substrate 203 is exposed by direct light and projected to the side of the substrate 203, so that a boundary effect is generated on the two sides of the substrate 203; the exposure may be performed using scattered light, and more preferably, two shutters 202 are provided with a predetermined gap on both sides of the substrate 203 to absorb unnecessary scattered light. It is understood that if the boundary range of the lithography pattern is defined on both sides of the second surface of the substrate 203, the baffles 202 may be disposed on the two outermost sides of the transparent carrier 200 to absorb unnecessary transmitted light, ensure the exposure process, and ensure accurate light emission; if the boundary range of the lithography pattern is limited only on one side of the substrate 203, the shutter 202 may not be provided. Specifically, the substrate 203 may be a magnetic head, and the second surface of the substrate 203 is an air bearing surface of the magnetic head. Preferably, photoresist layer 205 is a dry negative photoresist layer, wherein exposed portions of the negative photoresist remain on the surface after exposure, non-exposed portions are removed during development, and wherein the dry negative photoresist layer, when attached over a second surface of the substrate, does not damage the second surface and is more easily removed. More preferably, the photoresist layer 205 is a photoresist film with uniform thickness, strong adhesion, and no defects.

Subsequently, exposure is performed from the light-transmissive carrier 200 to the photoresist layer 205, and the light 207 produces a boundary effect along the boundary of the substrate 203, thereby forming a remaining region 208 and a removable region 209 on the photoresist layer 205, in this embodiment, a negative photoresist layer is selected, the remaining region 208 is formed by the light-exposed portion and the boundary effect-producing portion, and the removable region 209 is formed by the unexposed portion. Next, the photoresist layer 205 is developed to remove the removable areas 209, and the remaining areas 208 of the photoresist layer 205 constitute the pattern to be lithographed, i.e., the photoresist pattern left by the development will be used as a "mask" in the subsequent etching.

Preferably, the reflection control layer 206 is disposed above the photoresist layer 205, so that the reflection control layer 206 absorbs unnecessary transmitted light, reduces light reflection, improves the boundary effect, accurately defines the boundary range of the pattern to be etched, determines the precise shape and size of the pattern, avoids forming an irregular pattern at the boundary of the boundary effect, and reduces the error probability. Fig. 5 and 6 are patterns formed before and after adding the reflection control layer 206, respectively, and if fig. 5 does not add the reflection control layer 206, the boundary range defined by the boundary effect is blurred and uneven, and after adding the reflection control layer 206, the boundary range can be accurately defined by the boundary effect, and the boundary range of the pattern to be photoetched can be accurately defined, as shown in fig. 6. Specifically, the reflection control layer 206 may be a black plate or a panel to which a light absorbing material is attached, but is not limited thereto. Preferably, during the exposure process, the exposure is performed by using the UV scattered light, and when the sidewall of the substrate is an irregular sidewall, the scattered light is used to help the light to accurately reach the boundary of the substrate, so as to avoid the light from being influenced by the sidewall of the substrate and being incapable of being accurately projected.

Finally, the second surface 203b of the substrate 203 is etched to form a desired pattern according to the formed pattern to be lithographically patterned. Preferably, the photoresist remaining on the substrate 203 is removed after the pattern is formed on the substrate 203.

The method for forming the pattern on the substrate accurately limits the boundary and the size of the pattern by using the boundary effect of light, does not need to carry out accurate alignment and use a mask in the exposure process, simplifies the manufacturing process, reduces the failure times, does not need to use the mask and the mask to align a photoetching machine, and reduces the instrument cost; by utilizing the boundary effect of light, the steps of filling materials, surface planarization treatment, removal of the filling materials and the like are not needed, the manufacturing process is simplified, the raw material cost is reduced, and the risk of damaging the side wall of the substrate due to removal of the filling materials after the manufacturing is finished is avoided.

The above disclosure is only a preferred embodiment of the present invention, and certainly should not be taken as limiting the scope of the present invention, which is therefore intended to cover all equivalent changes and modifications within the scope of the present invention.

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