Magnetic nanoparticle control device based on coil micro-control structure
阅读说明：本技术 一种基于线圈微操控结构的磁性纳米粒子操控装置 (Magnetic nanoparticle control device based on coil micro-control structure ) 是由 杨波 陈新茹 姜永昌 郑翔 于 2020-05-14 设计创作，主要内容包括：本发明公开了一种基于线圈微操控结构的磁性纳米颗粒操控装置,由顶层带电极板结构、磁阻传感器、中间磁性纳米粒子和底层线圈微通道结构构成；磁阻传感器位于顶层带电极板下表面中心位置,底层线圈微通道位于顶层带电极板正下方且与顶层带电极板平行,中间的磁性纳米粒子位于顶层带电极板正下方,同时位于底层线圈微通道的正上方区域；由于通电底层线圈微通道结构的操纵,磁性纳米粒子得以被控制在顶层带电极板和磁阻传感器的正下方,进而通过顶层带电极板对磁性纳米粒子产生静电力使其向上悬浮。本发明降低了顶层带电极板对磁性纳米粒子粘附性。(The invention discloses a magnetic nanoparticle control device based on a coil micro-control structure, which consists of a top layer with an electrode plate structure, a magnetoresistive sensor, middle magnetic nanoparticles and a bottom layer coil micro-channel structure; the magnetic resistance sensor is positioned in the center of the lower surface of the top layer electrified polar plate, the bottom layer coil micro-channel is positioned under the top layer electrified polar plate and is parallel to the top layer electrified polar plate, and the middle magnetic nano-particles are positioned under the top layer electrified polar plate and are positioned in the area right above the bottom layer coil micro-channel; due to the operation of the electrified bottom coil microchannel structure, the magnetic nanoparticles can be controlled under the top layer charged electrode plate and the magnetoresistive sensor, and then the top layer charged electrode plate generates electrostatic force to the magnetic nanoparticles to enable the magnetic nanoparticles to be suspended upwards. The invention reduces the adhesiveness of the top layer charged electrode plate to the magnetic nano particles.)
1. A magnetic nanoparticle control device based on a coil micro-control structure is characterized in that: the magnetic nanoparticle control device is composed of a top layer with electrode plate structure, a magnetoresistive sensor, middle magnetic nanoparticles and a bottom layer coil micro-channel structure;
the magnetic resistance sensor (3) is positioned in the center of the lower surface of the top-layer plate with electrode (1), the bottom-layer coil microchannel (2) is positioned under the top-layer plate with electrode (1) and is parallel to the top-layer plate with electrode (1), and the middle magnetic nano particles (4) are positioned under the top-layer plate with electrode (1) and are positioned in the area right above the bottom-layer coil microchannel (2) at the same time;
due to the operation of the electrified bottom coil micro-channel structure (2), the magnetic nanoparticles (4) can be controlled under the top-layer charged electrode plate (1) and the magnetic resistance sensor (3), and then electrostatic force is generated on the magnetic nanoparticles (4) through the top-layer charged electrode plate (1) to enable the magnetic nanoparticles to be suspended upwards, meanwhile, the magnetic resistance sensor (3) adjusts the voltage value of the top-layer charged electrode plate (1) through detecting the distance between the top-layer charged electrode plate (1) and the magnetic nanoparticles (4), so that the magnetic nanoparticles (4) can be stably suspended in a region between the top-layer charged electrode plate (1) and the bottom coil micro-channel structure (2), and a unified whole is formed.
2. The magnetic nanoparticle manipulation device according to claim 1, wherein: the top layer charged electrode plate structure (1) is formed by symmetrically distributing four first, second, third and fourth square charged electrode plates (5, 6, 7 and 8) around the center point of the top layer charged electrode plate (1), and the magnetic resistance sensor (3) is positioned at the center of the top layer charged electrode plate structure (1); the voltage values of the first square strip electrode plates (5, 6, 7, 8), the second square strip electrode plates, the third square strip electrode plates and the fourth square strip electrode plates are all V, and the magneto-resistive sensor (3) can adjust the value of V so as to provide a proper voltage value.
3. The magnetic nanoparticle manipulation device according to claim 1, wherein: the bottom layer coil micro-channel structure (2) is a rectangular annular channel surrounded by 6 paths of switch current, the rectangle surrounded by the outermost layer of switch current is superposed with the bottom layer coil micro-channel (2), and the circle center of the magnetic nano-particle (4) is positioned at the center of the bottom layer coil micro-channel (2); wherein one end of the rectangular annular channel is respectively connected with tenth, eleventh, twelfth, thirteenth, fourteenth and fifteenth switches (10, 11, 12, 13, 14 and 15) from outside to inside in sequence, the switches are gathered from the outermost layer to the center, the other end of the rectangular annular channel is grounded,
the tenth switch (10) can be connected with a VCC end or a power supply of an A end, the eleventh switch (11) can be connected with a VCC end or a power supply of a B end, the twelfth switch (12) can be connected with a VCC end or a power supply of a C end, the thirteenth switch (13) can be connected with a VCC end or a power supply of a D end, the fourteenth switch (14) can be connected with a VCC end or a power supply of an E end, the fifteenth switch (15) can be connected with a VCC end or a power supply of an F end, wherein the A, B, C, D, E, F ends are direct current power supplies with the same voltage amplitude; when the bottom layer coil micro-channel structure (2) works, the tenth switch (10) is closed, so that the tenth switch (10) is disconnected after a circuit connected with the tenth switch (10) attracts the surrounding magnetic nanoparticles (4) to be close to a circuit channel; closing the eleventh switch (11) to enable the circuit connected with the eleventh switch (11) to attract the surrounding magnetic nanoparticles (4) to be close to the circuit channel, and then opening the eleventh switch (11); then the twelfth switch (12) is closed, so that the circuit connected with the twelfth switch (12) attracts the surrounding magnetic nanoparticles (4) to the vicinity of the circuit channel, and then the twelfth switch (12) is opened; repeating the above operations until the fifteenth switch (15) is closed, so that the twelfth switch (12) is opened after the circuit connected with the fifteenth switch (15) attracts the surrounding magnetic nanoparticles (4) to the vicinity of the circuit channel, and the magnetic nanoparticles (4) are controlled to the center of the bottom-layer coil microchannel (2);
after suspension is finished, the magnetic coil in the bottom coil microchannel structure (2) starts to work, the tenth, eleventh, twelfth, thirteenth, fourteenth and fifteenth switches (10, 11, 12, 13, 14 and 15) are simultaneously connected to a VCC end, alternating voltage provided by VCC enables the bottom magnetic coil structure (2) to generate magnetic field force, magnetic nanoparticles (4) are rapidly adsorbed on the bottom pole plate (1), and the adhesion of the top pole plate (1) to the magnetic nanoparticles (4) is greatly reduced.
4. The magnetic nanoparticle manipulation device according to claim 1, wherein: the bottom layer coil micro-channel structure (2) is composed of 4 arc current loops which are symmetrical about an origin, one end of a left upper circuit is connected with a power supply through sixteenth, seventeen, eighteenth, nineteen, twenty-one, twenty-two, twenty-three, twenty-four, twenty-five and twenty-six switches (16, 17, 18, 19, 20, 21, 22, 23, 24, 25 and 26), the other end is connected with a right public ground end, a right upper circuit and the left upper circuit are distributed in a mirror symmetry mode,
one end is connected with a power supply through twenty-seventh, twenty-eighth, twenty-ninth, thirty-first, thirty-second, thirty-third, thirty-fourth switches (27, 28, 29, 30, 31, 32, 33, 34), the other end is connected with a left common ground, one end of a left lower circuit is connected with the power supply through thirty-fifth, thirty-sixth, thirty-seventh, thirty-eighth, thirty-ninth, forty-fourth, forty-first, forty-twelve, forty-thirteen, forty-fifth switches (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45), the other end is connected with the left common ground, a right lower circuit and the left lower circuit or the right upper circuit are distributed in mirror symmetry, and one end is connected with the power supply through twenty-seventh, twenty-eighth, twenty-ninth, thirty-third, thirty-fourth switches (27, 28, 29, 30, 31, 32, 33, 34), the other end is connected to the right public grounding terminal;
each switch can be connected with an alternating current power supply VCC or a corresponding direct current power supply; wherein, the direct current power supplies corresponding to the sixteenth, seventeenth, eighteenth, nineteen, twenty-one, twenty-two, twenty-three, twenty-four, twenty-five and twenty-six switches (16, 17, 18, 19, 20, 21, 22, 23, 24, 25 and 26) are respectively: A. b, C, A, B, C, A, B, C, A, respectively; the direct current power supplies corresponding to twenty-seventh, twenty-eighth, twenty-ninth, thirty-first, thirty-second, thirty-third and thirty-fourth switches (27, 28, 29, 30, 31, 32, 33 and 34) are respectively: C. b, A, C, B, A, C, B, A, respectively; the direct current power supplies corresponding to the thirty-fifth, thirty-sixth, thirty-seventh, thirty-eighth, thirty-ninth, forty-first, forty-second, forty-third, forty-fourth, forty-fifth switches (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45) are respectively: A. b, C, A, B, C, A, B, C, A, respectively; the direct current power supplies corresponding to the forty-sixth, forty-seventh, forty-eighth, forty-ninth, fifty-first, fifty-second and fifty-third switches (46, 47, 48, 49, 50, 51, 52 and 53) are respectively: C. b, A, C, B, A, C, B, A, respectively; a, B, C is a DC power supply with the same voltage amplitude; when the bottom layer coil micro-channel structure (2) works, all sixteenth, nineteen, twenty-two, twenty-five, twenty-bar, thirty-one, thirty-four, thirty-five, thirty-eight, forty-one, forty-four, forty-seven, fifty switches (16, 19, 22, 25, 28, 31, 34, 35, 38, 41, 44, 47, 50, 53) which can be connected with a direct current power supply A are closed, so that a circuit connected with the end A attracts surrounding magnetic nano particles (4) to be close to a circuit channel, and then the end A switch is disconnected; seventeenth, twenty-third, twenty-seventh, thirty-third, thirty-sixth, thirty-ninth, forty-second, forty-sixth, forty-ninth, fifty-second switches (17, 20, 23, 27, 30, 33, 36, 39, 42, 46, 49, 52) are closed, so that the switch at the B end is opened after the circuit connected with the B end of the switch attracts the surrounding magnetic nano particles (4) to be close to the circuit channel; then an eighteenth, twenty-one, twenty-four, twenty-six, twenty-nine, thirty-two, thirty-seven, forty-three, forty-five, forty-eight, fifty-one switch (18, 21, 24, 26, 29, 32, 37, 40, 43, 45, 48, 51) is closed, so that the C-end switch is opened after the circuit connected with the C-end switch attracts the surrounding magnetic nano-particles (4) to the vicinity of the circuit channel; at the moment, the magnetic nano particles (4) are already positioned at the center of the top layer electrode plate (1), namely at the position right below the magnetoresistive sensor (3), and are prepared for the control of the top layer electrode plate (1) in the next step; after control and control are completed, the top layer belt electrode plate (1) is powered off, the magnetic coil in the bottom layer coil micro-channel structure (2) starts to work, the sixteenth-fifty switches (16-53) are connected to the VCC end at the same time, and alternating voltage provided by VCC enables the bottom layer magnetic coil structure (2) to generate magnetic field force, so that the magnetic nanoparticles (4) are rapidly adsorbed on the bottom layer plate, and the adhesion of the top layer plate to the magnetic nanoparticles (4) is greatly reduced.
5. The magnetic nanoparticle manipulation device according to claim 1, wherein: the bottom layer coil micro-channel structure (2) consists of a metal circular ring (62) positioned in the center of a circular bottom layer plate and 8 surrounding fifty-fourth, fifty-fifth, fifty-sixth, fifty-seventh, fifty-eighth, fifty-nine, sixty and sixty-one current line metal areas (54, 55, 56, 57, 58, 59, 60 and 61) which are symmetrical about an origin, wherein each current line metal area consists of a fan-shaped metal sheet, the current line metal area at the bottom layer coil micro-channel structure (2) is widest and is closer to the circle center of the bottom layer coil micro-channel structure (2), the current line metal area is narrower, and the circle center of the metal circular ring (62) and the circle center of the magnetic nano particles (4) are superposed with the circle center of the bottom layer coil micro-channel structure (2); one wider side of a fifty-fourth, fifty-fifth, fifty-sixth, fifty-seventh, fifty-eighth, fifty-ninth, sixty-sixth current line metal area (54, 55, 56, 57, 58, 59, 60, 61) is connected to a direct current power supply V, and the other narrower side of the current line metal area is connected to a metal ring (62) at the center of the channel and grounded; when the bottom layer coil micro-channel structure (2) works, all current wire metal areas (54-61) are simultaneously connected to a direct current power supply V, so that the energized fifty-fourth, fifty-fifth, fifty-sixth, fifty-seventh, fifty-eighth, fifty-ninth, sixty-sixty, sixty-one current wire metal areas (54, 55, 56, 57, 58, 59, 60, 61) generate potential difference due to different widths, the potential is maximum at the edge of the circular channel and gradually reduced along the direction of the circle center until the potential at the metal circular ring (62) is reduced to zero, at the moment, the magnetic nanoparticles (4) move along the direction of the reduction of the potential until the magnetic nanoparticles are positioned near the metal circular ring (62) after the metal manipulation control is completed, and the magnetic nanoparticles (4) are manipulated to the central position of the bottom layer coil micro-channel structure (2); after suspension is finished, sixty-fourth, sixty-fifth and sixty-sixth magnetic coils (64, 65 and 66) on the periphery of a circular channel in the bottom-layer coil micro-channel structure (2) start to work, the sixty-fourth, sixty-fifth and sixty-sixth magnetic coils (64, 65 and 66) are connected to a VCC alternating current power supply end, alternating current voltage provided by VCC enables the bottom-layer magnetic coil structure (2) to generate magnetic field force, magnetic nanoparticles (4) are rapidly adsorbed to the bottom-layer polar plate, and the adhesion of the top-layer polar plate to the magnetic nanoparticles (4) is greatly reduced.
Technical Field
The invention relates to the technical field of coil micro-control technology and magnetoresistive sensor detection, in particular to a magnetic nanoparticle control device based on a micro-coil control structure.
Background
Coil micromanipulation techniques generate electromagnetic field gradients by switching current between energized wires, so that magnetic nanoparticles can be moved to a detection region for detection. The coil micro-manipulation channel consists of a current-carrying conductive loop to manipulate the magnetic nanoparticles, ensuring that all the magnetic nanoparticles on the coil micro-manipulation channel are finally manipulated to the sensing position for detection. In contrast to external magnets, coil micro-manipulation channels manipulate magnetic nanoparticles with minimal footprint, becoming an extremely attractive on-chip component.
Much work has been done on the detection of magnetic nanoparticles using magnetoresistive sensors. Magnetoresistive sensors are highly sensitive, inexpensive, and compatible with most lab-on-a-chip applications. The chip based magnetoresistive sensor in combination with the magnetic microstructure for manipulating and detecting magnetic nanoparticles allows to build a simple, cheap and practical micro device for manipulating magnetic nanoparticles in a controlled manner, with many potential biomedical applications.
The coil micromanipulation technology is combined with the integrated magnetoresistive sensor technology to form a fully integrated microchip for the detection of magnetic nanoparticles. The ability to manipulate magnetic nanoparticles at the chip level improves particle control accuracy, reduces detection cost, and provides very important functions for biomedical applications and point-of-care medical devices.
Disclosure of Invention
The invention combines the magnetic control technology with the magnetic resistance sensor technology, adopts the magnetic resistance sensor as a detection method, provides the magnetic nano particle control device based on the micro-coil control structure, and has the advantages of good stability, high precision, low adhesion and the like.
Wherein the overall structure front view is composed of a top layer strip electrode plate structure, a magnetic resistance sensor, middle magnetic nano particles and a bottom layer coil micro-channel structure;
the magnetic resistance sensor is positioned in the center of the lower surface of the top layer electrified polar plate, the bottom layer coil micro-channel is positioned under the top layer electrified polar plate and is parallel to the top layer electrified polar plate, and the middle magnetic nano-particles are positioned under the top layer electrified polar plate and are positioned in the area right above the bottom layer coil micro-channel;
due to the operation of the electrified bottom coil micro-channel structure, the magnetic nanoparticles can be controlled under the top layer charged electrode plate and the magnetic resistance sensor, and then electrostatic force is generated on the magnetic nanoparticles through the top layer charged electrode plate to enable the magnetic nanoparticles to be suspended upwards, meanwhile, the magnetic resistance sensor adjusts the voltage value of the top layer charged electrode plate through detecting the distance between the top layer charged electrode plate and the magnetic nanoparticles, so that the magnetic nanoparticles can be stably suspended in the region between the top layer charged electrode plate and the bottom coil micro-channel structure, and a unified whole is formed.
The invention further improves that: analyzing from a top view of a top layer charged electrode plate structure, wherein the top layer charged electrode plate structure is formed by symmetrically distributing four first, second, third and fourth square charged electrode plates around the center point of the top layer charged electrode plate, and a magnetoresistive sensor is positioned at the center of the top layer charged electrode plate structure; the voltage values of the first square strip electrode plate, the second square strip electrode plate, the third square strip electrode plate and the fourth square strip electrode plate are all V, and the magnetoresistive sensor can adjust the value of V so as to provide a proper voltage value. The polar plate center integrated micro-magnetic resistance sensor is used for measuring the distance between the top layer provided with the polar plate and the magnetic nano particles and controlling the voltage value of the provided polar plate, so that the magnetic nano particles can be stably controlled above the bottom layer coil micro-channel structure with ideal height. On a horizontal plane, single magnetic nanoparticles are randomly distributed on a bottom-layer coil microchannel which is not electrified, the magnetic nanoparticles are controlled to regularly move towards the central area of the bottom-layer coil microchannel after the bottom-layer coil microchannel is electrified until the magnetic nanoparticles are positioned right below the magnetic resistance sensor, at the moment, the bottom-layer coil microchannel is powered off, and the top-layer strip electrode plate is electrically operated and controls the magnetic nanoparticles. After the control is completed, the top-layer electrode plate is powered off, and the bottom-layer magnetic coil is powered on to generate induction force so as to reduce the magnetic adhesion of the magnetic nanoparticles to the top-layer electrode plate, thereby realizing the complete control of the magnetic nanoparticles.
The invention further improves that: analyzing from a top view of a first design of a bottom-layer coil micro-channel structure, wherein the bottom-layer coil micro-channel structure is surrounded by 6 paths of switch currents to form a rectangular annular channel, a rectangle surrounded by an outermost-layer switch current is superposed with the bottom-layer coil micro-channel, and the circle center of a magnetic nano particle is positioned at the center of the bottom-layer coil micro-channel; wherein one end of the rectangular annular channel is respectively connected with the tenth switch, the eleventh switch, the twelfth switch, the thirteenth switch, the fourteenth switch and the fifteenth switch from outside to inside in sequence, the switches gather from the outermost layer to the center, the other end of the rectangular annular channel is grounded,
the tenth switch can be connected with a VCC end or a power supply at an A end, the eleventh switch can be connected with a VCC end or a power supply at a B end, the twelfth switch can be connected with a VCC end or a power supply at a C end, the thirteenth switch can be connected with a VCC end or a power supply at a D end, the fourteenth switch can be connected with a VCC end or a power supply at an E end, the fifteenth switch can be connected with a VCC end or a power supply at an F end, wherein the A, B, C, D, E, F ends are direct current power supplies with the same voltage amplitude; when the bottom layer coil micro-channel structure works, the tenth switch is closed, so that the circuit connected with the tenth switch attracts the surrounding magnetic nanoparticles to the vicinity of the circuit channel and then the tenth switch is disconnected; closing the eleventh switch to enable a circuit connected with the eleventh switch to attract the surrounding magnetic nanoparticles to be close to the circuit channel, and then disconnecting the eleventh switch; then the twelfth switch is closed, so that the circuit connected with the twelfth switch attracts the surrounding magnetic nano particles to the vicinity of the circuit channel, and then the twelfth switch is disconnected; repeating the above operations until the fifteenth switch is closed, so that the twelfth switch is opened after the circuit connected with the fifteenth switch attracts the surrounding magnetic nanoparticles to the vicinity of the circuit channel, and the magnetic nanoparticles are controlled to the center of the micro-channel of the bottom layer coil;
after suspension is finished, the magnetic coil in the bottom coil micro-channel structure starts to work, the tenth switch, the eleventh switch, the twelfth switch, the thirteenth switch, the fourteenth switch and the fifteenth switch are simultaneously connected to the VCC end, alternating voltage provided by the VCC enables the bottom magnetic coil structure to generate magnetic field force, magnetic nanoparticles are rapidly adsorbed to the bottom pole plate, and the adhesion of the top pole plate to the magnetic nanoparticles is greatly reduced.
The invention further improves that: from the top view analysis of the second design of the bottom layer coil micro-channel structure, the bottom layer coil micro-channel structure consists of 4 arc current loops which are symmetrical about the origin, one end of the upper left circuit is connected with a power supply through sixteenth, seventeenth, eighteenth, nineteen, twenty-first, twenty-second, twenty-third, twenty-fourth, twenty-fifth and twenty-sixth switches respectively, the other end is connected with the right public ground end, the upper right circuit and the upper left circuit are distributed in a mirror symmetry way,
one end of the left lower circuit is connected with the power supply through thirty-fifth, twenty-eighth, twenty-ninth, thirty-fifth, thirty-eleventh, thirty-twelfth, thirty-third and thirty-fourth switches respectively, the other end of the left lower circuit is connected with the left common ground through thirty-fifth, thirty-sixth, thirty-seventh, thirty-eighth, thirty-ninth, forty-forty, forty-eleventh, forty-twelfth, forty-thirteen, forty-fifth switches respectively, the other end of the left lower circuit is connected with the left common ground, the right lower circuit and the left lower circuit or the right upper circuit are distributed in mirror symmetry, one end of the right lower circuit is connected with the power supply through twenty-seventh, twenty-eighth, twenty-ninth, thirty-eleventh, thirty-second, thirty-third and thirty-fourth switches respectively;
each switch can be connected with an alternating current power supply VCC or a corresponding direct current power supply; wherein, the direct current power supplies corresponding to the sixteenth, seventeenth, eighteenth, nineteen, twenty-one, twenty-two, twenty-three, twenty-four, twenty-five and twenty-six switches are respectively: A. b, C, A, B, C, A, B, C, A, respectively; the direct current power supplies corresponding to twenty-seventh, twenty-eighth, twenty-ninth, thirty-first, thirty-second, thirty-third and thirty-fourth switches are respectively: C. b, A, C, B, A, C, B, A, respectively; the direct current power supplies corresponding to the thirty-fifth, thirty-sixth, thirty-seventh, thirty-eighth, thirty-ninth, forty-first, forty-second, forty-third, forty-fourth and forty-fifth switches are respectively: A. b, C, A, B, C, A, B, C, A, respectively; the direct current power supplies corresponding to the forty-sixth, forty-seventh, forty-eighth, forty-ninth, fifty-first, fifty-second and fifty-third switches are respectively: C. b, A, C, B, A, C, B, A, respectively; a, B, C is a DC power supply with the same voltage amplitude; when the bottom layer coil micro-channel structure works, all sixteenth, nineteen, twenty-two, twenty-five, twenty-bar, thirty-one, thirty-four, thirty-five, thirty-eight, forty-one, forty-four, forty-seven, fifty and fifty switches which can be connected with a direct current power supply A are closed, so that a circuit connected with the end A attracts surrounding magnetic nano particles to the vicinity of a circuit channel, and then the switch at the end A is disconnected; then, the seventeenth switch, the twenty-fifth switch, the twenty-third switch, the twenty-seventh switch, the thirty-third switch, the thirty-sixth switch, the thirty-ninth switch, the forty-second switch, the forty-sixth switch, the forty-ninth switch and the fifty-second switch are closed, so that the circuit connected with the end B of the switch attracts the surrounding magnetic nano particles to the vicinity of the circuit channel, and then the switch at the end B is disconnected; then, the eighteenth, twenty-one, twenty-four, twenty-six, twenty-nine, thirty-two, thirty-seven, forty-three, forty-five, forty-eight and fifty-one switches are closed, so that the circuit connected with the C-end switch attracts the surrounding magnetic nano particles to be close to the circuit channel and then the C-end switch is disconnected; at the moment, the magnetic nano particles are already positioned in the center of the top layer electrode plate, namely in the position right below the magnetoresistive sensor, and are prepared for the control of the top layer electrode plate in the next step; after control is finished, the top-layer band electrode plate is powered off, the magnetic coil in the bottom-layer coil micro-channel structure starts to work at the moment, the sixteenth-fifty three switches are connected to the VCC end at the same time, and the alternating voltage provided by the VCC enables the bottom-layer magnetic coil structure to generate magnetic field force, so that the magnetic nanoparticles are rapidly adsorbed on the bottom-layer electrode plate, and the adhesion of the top-layer electrode plate to the magnetic nanoparticles is greatly reduced.
The invention has the further improvement that the bottom layer coil micro-channel structure consists of a metal ring positioned at the center of a circular bottom layer plate and 8 current line metal areas which are symmetrical about an original point, wherein each current line metal area consists of a fan-shaped metal sheet; the wider side of the metal area of the fifty-fourth, fifty-fifth, fifty-sixth, fifty-seventh, fifty-eighth, fifty-ninth, sixty and sixty-one current line is connected with a direct current power supply V, and the narrower side of the metal area of the current line is connected to the metal ring at the center of the channel and grounded; when the bottom layer coil micro-channel structure works, all current wire metal areas are simultaneously connected to a direct current power supply V, so that the energized fifty-fourth, fifty-fifth, fifty-sixth, fifty-seventh, fifty-eighth, fifty-ninth, sixty and sixty-one current wire metal areas generate potential differences due to different widths, the potential is maximum at the edge of the circular channel and gradually reduced along the direction of the circle center until the potential at the metal circular ring is reduced to zero, and at the moment, the magnetic nanoparticles move along the direction of the reduced potential until the magnetic nanoparticles are positioned near the metal circular ring after the metal manipulation control is completed, so that the magnetic nanoparticles are manipulated to the central position of the bottom layer coil micro-channel structure; after suspension is finished, sixty-fourth, sixty-fifth and sixty-sixth magnetic coils on the periphery of a circular channel in the bottom-layer coil micro-channel structure start to work, the sixty-fourth, sixty-fifth and sixty-sixth magnetic coils are connected into a VCC alternating current power supply end, alternating current voltage provided by VCC enables the bottom-layer magnetic coil structure to generate magnetic field force, magnetic nanoparticles are quickly adsorbed onto the bottom-layer polar plate, and the adhesion of the top-layer polar plate to the magnetic nanoparticles is greatly reduced.
Has the advantages that:
(1) the invention adopts the devices of bottom microchannel control and top electrode plate control to control the magnetic nano particles, ensures that the magnetic nano particles are always positioned under the electrode plate area, is convenient for the detection of the magnetic resistance sensor and the regulation and control of the field intensity, and is easy to realize the stable control of the magnetic nano particles.
(2) The invention adopts the method of detecting the integrated magnetoresistive sensor with the electrode plate to detect the control height of the magnetic nanoparticles and control the voltage value of the electrode plate, thereby easily realizing the accurate control of the magnetic nanoparticles.
(3) The invention adopts a DC circuit micro-channel structure with alternately electrified bottom layers to realize the control of the magnetic nano particles, so that the magnetic nano particles can be controlled to reach the central position of the micro-channel from the edge position of the bottom layer channel through the alternate current paths, the control effect with the unipolar plate is improved, and the precision of the magnetoresistive sensor is also improved.
(4) According to the invention, the alternating current coil structure with the multiplexed bottom-layer channels is adopted, so that the magnetic nanoparticles after the operation and control are quickly adsorbed into the bottom-layer micro-channel structure, and the adhesion of the top-layer band electrode plate to the magnetic nanoparticles is reduced.
Drawings
FIG. 1 is a front view of the overall structure of the present invention
FIG. 2 is a top view of the top layer strip electrode of the present invention
FIG. 3 is a top view of the bottom micro-channel coil design of the present invention
FIG. 4 is a top view of a bottom micro-channel coil design of the present invention
FIG. 5 is a top view of a bottom micro-channel coil design of the present invention
Detailed Description
The present invention will be further illustrated with reference to the accompanying drawings and specific embodiments, which are to be understood as merely illustrative of the invention and not as limiting the scope of the invention. It should be noted that the terms "front," "back," "left," "right," "upper" and "lower" used in the following description refer to directions in the drawings, and the terms "inner" and "outer" refer to directions toward and away from, respectively, the geometric center of a particular component.
The magnetic nanoparticle control device based on the coil micro-control structure is composed of a top layer sensor control structure, magnetic nanoparticles, a bottom layer coil micro-control channel structure and a bottom layer magnetic coil structure. As shown in the overall structure front view of fig. 1, the overall structure is composed of a top layer with
As shown in fig. 2, a top-layer strip electrode plate structure top view, the top-layer strip
As shown in the top view of the first design of the bottom-layer coil microchannel structure in fig. 3, the bottom-layer
the tenth switch 10 can be connected with a VCC end or a power supply of an A end, the eleventh switch 11 can be connected with a VCC end or a power supply of a B end, the twelfth switch 12 can be connected with a VCC end or a power supply of a C end, the thirteenth switch 13 can be connected with a VCC end or a power supply of a D end, the fourteenth switch 14 can be connected with a VCC end or a power supply of an E end, the fifteenth switch 15 can be connected with a VCC end or a power supply of an F end, wherein the A, B, C, D, E, F ends are direct current power supplies with the same voltage amplitude;
when the bottom-layer coil
after the suspension is finished, the magnetic coil in the bottom-layer
As shown in the top view of the second design of the bottom coil microchannel structure in fig. 4, the bottom
one end is connected with a power supply through twenty-seventh, twenty-eighth, twenty-ninth, thirty-first, thirty-second, thirty-third, thirty-fourth switches 27, 28, 29, 30, 31, 32, 33, 34 respectively, the other end is connected with a left public ground, one end of a left lower circuit is connected with the power supply through thirty-fifth, thirty-sixth, thirty-seventh, thirty-eighth, thirty-ninth, forty-eleventh, forty-twelve, forty-thirteen, forty-fifth switches 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45 respectively, the other end is connected with the left public ground, a right lower circuit is distributed in mirror symmetry with the left lower circuit or the right upper circuit, and one end is connected with the power supply through twenty-seventh, twenty-eighth, twenty-ninth, thirty-eleventh, thirty-second, thirty-fourth switches 27, 28, 29, 30, 31, 32, 33, 34 respectively, the other end is connected to the right public grounding terminal;
each switch can be connected with an alternating current power supply VCC or a corresponding direct current power supply; wherein, the dc power supplies corresponding to the sixteenth, seventeenth, eighteenth, nineteen, twenty-one, twenty-two, twenty-three, twenty-four, twenty-five, twenty-six switches 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26 are respectively: A. b, C, A, B, C, A, B, C, A, respectively; the direct current power supplies corresponding to the twenty-seventh, twenty-eighth, twenty-ninth, thirty-first, thirty-second, thirty-third and thirty-fourth switches 27, 28, 29, 30, 31, 32, 33 and 34 are respectively: C. b, A, C, B, A, C, B, A, respectively; the thirty-fifth, thirty-sixth, thirty-seventh, thirty-eighth, thirty-ninth, forty-first, forty-second, forty-third, forty-fourth, forty-fifth switches 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45 correspond to dc power supplies respectively: A. b, C, A, B, C, A, B, C, A, respectively; the direct current power supplies corresponding to the forty-sixth, forty-seventh, forty-eighth, forty-ninth, fifty-first, fifty-second, fifty-fifth switches 46, 47, 48, 49, 50, 51, 52, 53 are respectively: C. b, A, C, B, A, C, B, A, respectively; a, B, C is a DC power supply with the same voltage amplitude; when the bottom layer coil
As shown in the top view of the third design of the bottom layer coil microchannel structure in fig. 5, the bottom layer
The technical means disclosed in the invention scheme are not limited to the technical means disclosed in the above embodiments, but also include the technical scheme formed by any combination of the above technical features.
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