Radio frequency front end module and wireless device
阅读说明:本技术 射频前端模块和无线装置 (Radio frequency front end module and wireless device ) 是由 倪楠 曹原 胡自洁 倪建兴 于 2020-05-14 设计创作,主要内容包括:本发明公开了一种射频前端模块和无线装置,应用于射频电路技术领域,用于解决射频前端工作过程中功率信号过强导致可靠性较低的器件烧毁的问题。该射频前端模块包括设置在发射路径上的功率放大器、滤波器和射频开关;所述射频开关包括多个并联的晶体管阵列,每一个晶体管阵列由多个晶体管串联组成;所述射频开关被配置为接收控制信号,以根据控制信号控制所述射频开关中各个晶体管阵列的开启或关断,所述控制信号指示所述功率放大器的输出功率,其中,所述功率放大器的输出功率越高,则所述射频开关中开启的晶体管阵列越少。(The invention discloses a radio frequency front end module and a wireless device, which are applied to the technical field of radio frequency circuits and used for solving the problem that devices with lower reliability are burnt due to over-strong power signals in the working process of the radio frequency front end. The radio frequency front end module comprises a power amplifier, a filter and a radio frequency switch which are arranged on a transmitting path; the radio frequency switch comprises a plurality of parallel transistor arrays, and each transistor array is formed by connecting a plurality of transistors in series; the radio frequency switch is configured to receive a control signal to control the on or off of each transistor array in the radio frequency switch according to the control signal, the control signal indicating the output power of the power amplifier, wherein the higher the output power of the power amplifier, the fewer transistor arrays are turned on in the radio frequency switch.)
1. A radio frequency front end module comprising a power amplifier, a filter and a radio frequency switch disposed in a transmit path;
the radio frequency switch comprises a plurality of parallel transistor arrays, and each transistor array is formed by connecting a plurality of transistors in series;
the radio frequency switch is configured to receive a control signal to control the on or off of each transistor array in the radio frequency switch according to the control signal, the control signal indicating the output power of the power amplifier, wherein the higher the output power of the power amplifier, the fewer transistor arrays are turned on in the radio frequency switch.
2. The radio frequency front end module of claim 1, further comprising a control circuit;
the control circuit comprises a sampling circuit and a control signal generating circuit, wherein the input end of the control signal generating circuit is electrically connected with the sampling circuit, and the output end of the control signal generating circuit is electrically connected with the radio frequency switch;
when the radio frequency front end module works, the sampling circuit collects an output power signal of the power amplifier and sends the output power signal to the control signal generating circuit, and the control signal generating circuit compares the output power signal with a preset reference signal and outputs a control signal to the radio frequency switch according to a comparison result.
3. The RF front-end module of claim 1, wherein the RF switch is disposed in a transmission path of the RF front-end module and at an output back end of the power amplifier;
the radio frequency switch is one or more of a frequency band selection switch, a change-over switch of the transmitting path and an antenna change-over switch.
4. The radio frequency front end module of claim 2, wherein the control signal generation circuit is configured to: comparing the output power signal with a plurality of preset reference signal thresholds, and determining a target threshold interval in which the output power signal is located; determining the number of target switch arrays corresponding to the target threshold interval according to the corresponding relation of the switches in the preset interval; and generating and outputting control signals according to the number of the target switch arrays so as to control the number of the transistor arrays of the target switch arrays of the current access circuit of the radio frequency switch.
5. The RF front-end module of claim 4, further comprising a resistor with a resistor access switch;
the control signal generation circuit is further configured to: and if the radio frequency switch only starts one transistor array and the output power of the power amplifier is greater than a preset overload threshold value, outputting an overload protection signal to change the configuration of the resistor access switch so as to control the resistor to be accessed into the circuit of the transmitting path.
6. The rf front-end module of claim 2, further comprising a coupler disposed on the transmit path;
the sampling circuit is configured to: and collecting a signal of the output power of the coupler as an output power signal of the power amplifier.
7. The rf front-end module of claim 2, wherein the control signal generating circuit is a CMOS circuit, the rf switch is an SOI switch, and the CMOS circuit is electrically connected to the SOI switch.
8. The RF front-end module of any one of claims 2 to 7, further comprising a bias circuit electrically connected to an input of the power amplifier;
the control signal generation circuit is further configured to: and if the comparison result meets a first preset condition, reducing the output power of the power amplifier by adjusting the bias circuit.
9. The rf front-end module of claim 8, further comprising an on-off switch for the power amplifier;
the control signal generation circuit is further configured to: and if the comparison result meets a second preset condition, outputting a cutoff protection signal to change the configuration of the on-off switch so as to control the bias circuit of the power amplifier to be in an open circuit.
10. An antenna arrangement comprising an antenna and a radio frequency front end module as claimed in any one of claims 1 to 9 electrically connected to the antenna.
Technical Field
The present invention relates to the field of radio frequency circuit technology, and in particular, to a radio frequency front end module and a wireless device.
Background
When the radio frequency front end module works, most of signals in the mobile phone need to be amplified through the power amplifier, and then the amplified signals are transmitted to the antenna through the transmitting path for transmitting. In order to ensure the quality of the signal, a filter or a device including a filter, such as a duplexer, is generally disposed in the transmission path of the power amplifier. At present, the reliability of filter devices is generally low, and particularly, when the output power of a power amplifier is unstable, the filter devices are easy to burn out, such as surface acoustic wave filters, surface acoustic wave filters and duplexers. In order to prevent the filter device from being burned out, the radio frequency front end module in the market is often provided with a control circuit of the power amplifier to monitor and limit the output power of the power amplifier, so as to prevent the power amplifier from outputting excessive power and avoid the filter device from being burned out.
However, when the rf front-end module is in operation, if the power on the transmission path is too high (e.g., an abnormal circuit occurs), some devices with lower reliability (e.g., filter devices) may be easily burned. In the face of such a situation, the control circuits on the market at present are difficult to play a role in protecting devices with lower reliability.
Disclosure of Invention
The embodiment of the invention provides a radio frequency front end module and a wireless device, which aim to solve the problem that devices with lower reliability are burnt due to over-strong power signals in the working process of the radio frequency front end.
The invention provides a radio frequency front end module, which comprises a power amplifier, a filter and a radio frequency switch, wherein the power amplifier, the filter and the radio frequency switch are arranged on a transmitting path;
the radio frequency switch comprises a plurality of parallel transistor arrays, and each transistor array is formed by connecting a plurality of transistors in series;
the radio frequency switch is configured to receive a control signal to control the on or off of each transistor array in the radio frequency switch according to the control signal, the control signal indicating the output power of the power amplifier, wherein the higher the output power of the power amplifier, the fewer transistor arrays are turned on in the radio frequency switch.
Optionally, a control circuit is also included;
the control circuit comprises a sampling circuit and a control signal generating circuit, wherein the input end of the control signal generating circuit is electrically connected with the sampling circuit, and the output end of the control signal generating circuit is electrically connected with the radio frequency switch;
when the radio frequency front end module works, the sampling circuit collects an output power signal of the power amplifier and sends the output power signal to the control signal generating circuit, and the control signal generating circuit compares the output power signal with a preset reference signal and outputs a control signal to the radio frequency switch according to a comparison result.
Optionally, the radio frequency switch is disposed on a transmission path of the radio frequency front-end module and located at an output rear end of the power amplifier;
the radio frequency switch is one or more of a frequency band selection switch, a change-over switch of the transmitting path and an antenna change-over switch.
Optionally, the control signal generating circuit is configured to: comparing the output power signal with a plurality of preset reference signal thresholds, and determining a target threshold interval in which the output power signal is located; determining the number of target switch arrays corresponding to the target threshold interval according to the corresponding relation of the switches in the preset interval; and generating and outputting control signals according to the number of the target switch arrays so as to control the number of the transistor arrays of the target switch arrays of the current access circuit of the radio frequency switch.
Optionally, the device further comprises a resistor with a resistor access switch;
the control signal generation circuit is further configured to: and if the radio frequency switch only starts one transistor array and the output power of the power amplifier is greater than a preset overload threshold value, outputting an overload protection signal to change the configuration of the resistor access switch so as to control the resistor to be accessed into the circuit of the transmitting path.
Optionally, a coupler disposed on the transmit path;
the sampling circuit is configured to: and collecting a signal of the output power of the coupler as an output power signal of the power amplifier.
Optionally, the control signal generating circuit is a CMOS circuit, the radio frequency switch is an SOI switch, and the CMOS circuit is electrically connected to the SOI switch.
Optionally, the rf front-end module further includes a bias circuit, and the bias circuit is electrically connected to the input terminal of the power amplifier;
the control signal generation circuit is further configured to: and if the comparison result meets a first preset condition, reducing the output power of the power amplifier by adjusting the bias circuit.
Optionally, the radio frequency front end module further includes an on-off switch of the power amplifier;
the control signal generation circuit is further configured to: and if the comparison result meets a second preset condition, outputting a cutoff protection signal to change the configuration of the on-off switch so as to control the bias circuit of the power amplifier to be in an open circuit.
The invention also provides an antenna device, which comprises an antenna and a radio frequency front end module electrically connected with the antenna;
the radio frequency front end module comprises a power amplifier, a filter and a radio frequency switch which are arranged on a transmitting path;
the radio frequency switch comprises a plurality of parallel transistor arrays, and each transistor array is formed by connecting a plurality of transistors in series;
the radio frequency switch is configured to receive a control signal to control the on or off of each transistor array in the radio frequency switch according to the control signal, the control signal indicating the output power of the power amplifier, wherein the higher the output power of the power amplifier, the fewer transistor arrays are turned on in the radio frequency switch.
The radio frequency front-end module provided by the invention can weaken the power strength on a transmitting path by using the equivalent impedance of the radio frequency switch, the power signal is reduced by the consumption of the equivalent impedance of the radio frequency switch, the overload of a device (such as a filter device) with lower reliability caused by the over-strong power signal can be effectively avoided, and the device with lower reliability is prevented from being burnt.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a circuit diagram of a first example of a radio frequency front end module according to the present invention;
FIG. 2 is a circuit diagram of a first example of an RF switch of the present invention;
FIG. 3 is a circuit diagram of a second exemplary RF switch of the present invention;
FIG. 4 is a circuit diagram of a third exemplary RF switch of the present invention;
FIG. 5 is a circuit diagram of a second exemplary RF front-end module according to the present invention;
fig. 6 is a circuit diagram of a third example of a rf front-end module according to the present invention;
fig. 7 is a circuit diagram of a fourth example of an rf front-end module according to the present invention;
fig. 8 is a circuit diagram of a fifth example of a rf front-end module according to the present invention;
fig. 9 is a circuit diagram of a sixth example of a rf front-end module according to the present invention;
fig. 10 is a circuit diagram of a seventh example of an rf front-end module according to the present invention;
fig. 11 is a circuit diagram of an eighth example of an rf front-end module according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to purposefully solve the problem that the overload of a device with lower reliability is caused by the over-strong power signal in the working process of the radio frequency front end, the radio frequency front end module provided by the invention utilizes the equivalent impedance of the radio frequency switch to weaken the power intensity on a transmitting path, and the power signal is reduced through the consumption of the equivalent impedance of the radio frequency switch, so that the overload of the device with lower reliability caused by the over-strong power signal can be effectively avoided, and the device with lower reliability is prevented from being burnt (a filter device is taken as an example below).
Fig. 1 is a circuit diagram of an exemplary rf front-end module according to the present invention. The radio frequency front end module comprises a
Specifically, on the
When the radio frequency front end module works, the
In some embodiments, the
After receiving the output power signal, the control
Fig. 2 is a circuit diagram of an example of an
In some embodiments, in order to more accurately and effectively control the number of switch array access circuits in the
Accordingly, the control
In some application scenarios, after reducing the switch array in the access circuit, the equivalent impedance of the
Preferably, in some embodiments, the
Preferably, in some embodiments, the
In some embodiments, as shown in fig. 5, the rf front-end module further includes a
Preferably, in some embodiments, as shown in fig. 1 and fig. 6, the
Preferably, in some embodiments, as shown in fig. 1 and 7, the control
Further, as shown in fig. 10 and fig. 11, by using the strong performance of the CMOS circuit, when necessary, one CMOS circuit may be used to simultaneously load the sampling and control operations of more than two rf front-end modules, that is, to simultaneously serve as more than two
Preferably, in some embodiments, as shown in fig. 1 and 8, the rf front-end module may further include a bias circuit, and the bias circuit is electrically connected to the input terminal of the
Further, as shown in fig. 1 and fig. 9, the rf front-end module may further include an on-
According to the content of the above embodiments, the radio frequency front end module related to the present invention can weaken the power strength on the transmission path by using the equivalent impedance of the radio frequency switch, and the power signal is reduced by the consumption of the equivalent impedance of the radio frequency switch, so that the filter device can be effectively prevented from being overloaded due to the excessively strong power signal, and the filter device is prevented from being burned. Furthermore, the control signal generating circuit is a CMOS circuit, the
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
In another aspect, the present invention further relates to a wireless device, which includes an antenna, and the rf front-end module described in any of the above embodiments electrically connected to the antenna. The radio frequency front end module comprises a power amplifier, a filter and a radio frequency switch which are arranged on a transmitting path;
the radio frequency switch comprises a plurality of parallel transistor arrays, and each transistor array is formed by connecting a plurality of transistors in series;
the radio frequency switch is configured to receive a control signal to control the on or off of each transistor array in the radio frequency switch according to the control signal, the control signal indicating the output power of the power amplifier, wherein the higher the output power of the power amplifier, the fewer transistor arrays are turned on in the radio frequency switch.
It should be understood that the rf front-end module in the wireless device is not limited to any one of the rf front-end modules mentioned in the embodiments of the present invention, and therefore, the technical features and the expected technical effects of the rf front-end module described in the embodiments above are also possessed by the wireless device, and are not described herein again.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-mentioned functions.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
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