阅读说明：本技术 一种化学机械平坦化设备 (Chemical mechanical planarization equipment ) 是由 李婷 岳爽 尹影 崔凯 蒋锡兵 靳阳 于 2020-04-20 设计创作，主要内容包括：本发明涉及半导体设备技术领域,具体涉及一种化学机械平坦化设备,晶圆与抛光垫接触时,所述晶圆上具有接触区域,该平坦化设备上设有喷液组件,所述喷液组件具有至少一个出液口,从所述出液口喷出的液体均匀地分布在所述接触区域上。本发明提供一种提高了晶圆表面均匀度的化学机械平坦化设备。(The invention relates to the technical field of semiconductor equipment, in particular to chemical mechanical planarization equipment. The invention provides a chemical mechanical planarization device for improving the surface uniformity of a wafer.)

1. A chemical mechanical planarization device, when a wafer (2) contacts with a polishing pad (1), the wafer (2) is provided with a contact area (3), characterized in that the planarization device is provided with a liquid spraying assembly, the liquid spraying assembly is provided with at least one liquid outlet (5), and liquid sprayed from the liquid outlet (5) is uniformly distributed on the contact area (3).

2. The chemical mechanical planarization apparatus of claim 1, wherein the liquid jet assembly is movably disposed relative to the polishing pad (1), and a moving trajectory of the liquid jet assembly is identical to a moving trajectory of the wafer (2) relative to the polishing pad (1).

3. The chemical mechanical planarization apparatus of claim 2, wherein the liquid spray assembly is located in front of the wafer (2) on the moving track relative to the wafer (2).

4. The chemical mechanical planarization apparatus of claim 1, wherein the liquid spray assembly oscillates at the periphery of the contact area (3).

5. The chemical mechanical planarization apparatus of any one of claims 1-4, further comprising a conditioning assembly (4), wherein said conditioning assembly (4) is a liquid jet assembly.

6. The chemical mechanical planarization apparatus of claim 5, wherein the conditioning assembly (4) comprises a conditioning end (41) in contact with the polishing pad (1), the liquid outlet (5) being located on the conditioning end (41).

7. The chemical mechanical planarization apparatus of claim 6, wherein the liquid outlet (5) is provided on the peripheral wall of the trimming end (41).

8. The chemical mechanical planarization apparatus of claim 7, wherein the liquid outlet (5) is plural and uniformly distributed along the peripheral wall of the trimming end (41).

9. The chemical mechanical planarization apparatus of claim 6, wherein the liquid outlet (5) is disposed at the bottom of the trimming end (41).

10. The chemical mechanical planarization apparatus of any one of claims 6-9, wherein the conditioning assembly (4) further comprises a moving arm (43) moving relative to the polishing pad (1), the conditioning end (41) being disposed on the moving arm (43), and an infusion line communicating with the liquid outlet (5) being disposed in the moving arm (43).

11. Chemical mechanical planarization equipment of claim 10, characterized in that said moving arm (43) is provided with said liquid outlet (5).

Technical Field

The invention relates to the technical field of semiconductor equipment, in particular to chemical mechanical planarization equipment.

Background

With the development of moore's law, the role of chemical mechanical planarization equipment in the semiconductor manufacturing process flow becomes more and more important, and the requirements for the process performance of the equipment also become higher and higher. In the process performance of chemical mechanical planarization, the most critical factor is the surface topography of the wafer, and whether the surface topography of the wafer is smooth or not directly affects the subsequent process, and may cause the electrical performance of the final chip to be affected, so effectively improving the surface topography of the wafer is one of the most important targets for optimizing the performance of the chemical mechanical planarization equipment.

When the existing chemical mechanical planarization equipment is used for polishing, the wafer and the polishing pad are used for mutual grinding, polishing liquid is conveyed while grinding, so that the polishing liquid and the surface of the wafer are subjected to chemical reaction, and therefore the surface of the wafer is planarized.

Disclosure of Invention

Therefore, the technical problem to be solved by the present invention is to solve the problem of poor uniformity of the wafer surface after the chemical mechanical planarization apparatus in the prior art is polished, so as to provide a chemical mechanical planarization apparatus with improved uniformity of the wafer surface.

In order to solve the above technical problem, the present invention provides a chemical mechanical planarization apparatus, wherein a wafer has a contact area when the wafer contacts a polishing pad, the planarization apparatus is provided with a liquid spraying assembly, the liquid spraying assembly has at least one liquid outlet, and liquid sprayed from the liquid outlet is uniformly distributed on the contact area.

Further, the liquid spraying assembly is movably arranged relative to the polishing pad, and the moving track of the liquid spraying assembly is the same as the moving track of the wafer relative to the polishing pad.

Further, the liquid spraying assembly is located in front of the wafer on the moving track relative to the wafer.

Further, the liquid ejection assembly oscillates at the periphery of the contact area.

Further, the device also comprises a finishing assembly which is a liquid spraying assembly.

Further, the conditioning assembly includes a conditioning end in contact with the polishing pad, and the fluid outlet is located on the conditioning end.

Further, the liquid outlet is arranged on the peripheral wall of the trimming end.

Further, the liquid outlet is a plurality of, and follows the periphery wall evenly distributed of repairing the end.

Further, the liquid outlet is arranged at the bottom of the trimming end.

Further, the trimming assembly further comprises a moving arm which moves relative to the polishing pad, the trimming end is arranged on the moving arm, and a liquid conveying pipeline communicated with the liquid outlet is arranged in the moving arm.

Further, the moving arm is provided with the liquid outlet.

The technical scheme of the invention has the following advantages:

1. according to the chemical mechanical planarization equipment provided by the invention, when the wafer is contacted with the polishing pad, the wafer is provided with the contact area, the planarization equipment is provided with the liquid spraying assembly, the liquid spraying assembly is provided with at least one liquid outlet, liquid sprayed out of the liquid outlet is uniformly distributed on the contact area, so that the wafer can be uniformly contacted with the liquid, the chemical reaction between the wafer and the liquid is more uniform, the uniformity of the surface of the wafer is further improved, the condition that the polishing rate at the edge of the wafer is suddenly changed, is sharply reduced and then increased or is directly and greatly increased is avoided, the yield of the wafer is improved, and the waste caused by the processing problem is reduced.

2. According to the chemical mechanical planarization equipment provided by the invention, the plurality of liquid outlets are uniformly distributed along the peripheral wall of the trimming end, so that the amount of liquid sprayed on the polishing pad by each liquid outlet is the same and uniform, and the sprayed liquid is more uniformly distributed on the contact area of the polishing pad.

3. The chemical mechanical planarization device provided by the invention is characterized in that the trimming assembly further comprises a moving arm moving relative to the polishing pad, the trimming end is arranged on the moving arm, and a liquid conveying pipeline communicated with the liquid outlet is arranged in the moving arm. Through setting up the infusion pipeline in moving the arm, hidden the infusion pipeline, prevented the removal of infusion pipeline on moving the arm, lead to the fluctuation of the inside liquid of infusion pipeline, and then guaranteed the homogeneity of blowout liquid.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a schematic structural diagram of a chemical mechanical planarization apparatus according to the present invention;

FIG. 2 is a cross-sectional view of a conditioning assembly;

FIG. 3 is a sectional view of the holder;

FIG. 4 is a bottom view of the diamond wheel;

fig. 5 is a schematic structural diagram of another embodiment.

Description of reference numerals:

1-a polishing pad; 2-a wafer; 3-a contact area; 4-a finishing assembly; 41-trimming end; 411-a fixed seat; 412-diamond wheel; 413-storage space; 42-a frame; 43-a moving arm; 44-a shunting block; 5-a liquid outlet; 6-conveying pipeline; 61-main line; 62-branch lines;

Detailed Description

The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

When the chemical mechanical planarization equipment in the prior art performs polishing treatment on the wafer 2, the wafer 2 is placed on the polishing pad 1 for trimming, polishing liquid is conveyed to the surface of the polishing pad 1, and the purpose of polishing and leveling the surface of the wafer 2 is achieved through chemical reaction between the polishing liquid and the surface of the wafer 2.

Referring to fig. 1 to 5, the present embodiment provides a chemical mechanical planarization apparatus for polishing a wafer 2 in a polishing work area. When the wafer 2 is in contact with the polishing pad 1, the wafer 2 is provided with a contact area 3, and the polishing pad 1 grinds the wafer 2 through the contact area 3, so that the surface of the wafer 2 is subjected to chemical mechanical planarization process. The chemical mechanical planarization equipment is provided with a liquid spraying assembly, liquid is contained in the liquid spraying assembly, the liquid is polishing liquid which reacts with the surface of the wafer 2, the liquid spraying assembly is provided with at least one liquid outlet 5, and the liquid sprayed out of the liquid outlet 5 is uniformly distributed on the contact area 3.

Through hydrojet subassembly's setting, and be equipped with liquid outlet 5 on hydrojet subassembly, make spun liquid can distribute uniformly on wafer 2 and polishing pad 1's contact area 3, the liquid on this contact area 3 can be even with wafer 2 contact, the chemical reaction that takes place between wafer 2 and the liquid is also more even, and then improved 2 surperficial degrees of consistency of wafer, avoid 2 edges of wafer rate of polishing sudden change, and sharply reduce then increase appears, or the direct condition that increases by a wide margin, thereby the yields of wafer 2 has been improved, the waste because of the processing problem causes has been reduced.

Specifically, the liquid spraying assembly can be movably disposed relative to the polishing pad 1, that is, the liquid spraying assembly moves on the polishing pad 1, wherein the moving track of the liquid spraying assembly is the same as the moving track of the wafer 2 relative to the polishing pad 1, and the moving track can be that the wafer 2 rotates along the circumference of the polishing pad 1, or can be separately moved according to a fixed shape, for example, the moving track of the wafer 2 on the polishing pad 1 is V-shaped or L-shaped; the liquid ejected from the liquid ejection assembly is uniformly ejected onto the contact area 3 by the movement of the liquid ejection assembly with the movement of the wafer 2.

As an alternative embodiment, the liquid spraying assembly is located on the moving track relative to the wafer 2 and in front of the wafer 2, that is, when the wafer 2 moves along the predetermined moving track on the polishing pad 1, the liquid spraying assembly sprays the liquid onto the pre-contact area 3 in advance, the pre-contact area 3 is the position to which the wafer 2 is to move, so that the uniformity of the liquid at the contact area 3 between the wafer 2 and the polishing pad 1 is ensured.

As an alternative embodiment, the liquid ejecting assembly ejects the liquid uniformly onto the contact area 3 while oscillating at the periphery of the contact area 3, that is, while oscillating at a predetermined cycle in the vicinity of the contact area 3, thereby ensuring uniformity of the liquid at the contact area 3. The period may be set according to the actual movement track of the wafer 2.

In this embodiment, a conditioning assembly 4 is further included, wherein the conditioning assembly 4 is a liquid spray assembly.

Specifically, as shown in fig. 2, the conditioning assembly 4 includes a conditioning end 41 in contact with the polishing pad 1, and the discharge port 5 is located on the conditioning end 41. When grinding between wafer 2 and polishing pad 1, will remain the impurity after grinding on polishing pad 1, dressing end 41 can be timely clear away remaining impurity on polishing pad 1, through setting up liquid outlet 5 on dressing end 41, dressing end 41 is when clearing away remaining impurity on polishing pad 1, can also spout liquid on polishing pad 1 uniformly, make liquid evenly distributed on polishing pad 1, make and fully grind between wafer 2 and polishing pad 1, the grinding effect between polishing pad 1 and wafer 2 has been guaranteed, thereby the degree of consistency on wafer 2 surface has been improved.

Specifically, the dressing end 41 comprises a fixed seat 411 and a diamond wheel 412 arranged at the bottom of the fixed seat 411, the polishing pad 1 is dressed by the diamond wheel 412, and the liquid outlet 5 is arranged on the peripheral wall of the fixed seat 411, so that liquid can be sprayed out while the polishing pad 1 is dressed by the diamond wheel 412, and the liquid can be uniformly sprayed on the polishing pad 1 through the peripheral wall of the fixed seat 411.

In the present embodiment, the number of the liquid outlets 5 is five, and the liquid outlets are uniformly distributed along the outer peripheral wall of the fixing base 411, and the amount of the liquid sprayed onto the polishing pad 1 by each liquid outlet 5 is the same and uniform, so that the sprayed liquid is more uniformly distributed on the contact area 3 of the polishing pad 1.

As an alternative embodiment, the number of the liquid outlets 5 is five, and the five liquid outlets are unevenly distributed along the outer peripheral wall of the fixed seat 411.

As an alternative embodiment, as shown in fig. 4, at least one liquid outlet 5 is provided at the bottom of the diamond wheel 412, and when the diamond wheel 412 dresses the polishing pad 1, liquid is sprayed from the bottom of the diamond wheel 412 onto the polishing pad 1, so that the sprayed liquid is distributed more uniformly over the contact area 3 of the polishing pad 1.

As an alternative embodiment, the number of the liquid outlets 5 is five, and the liquid outlets are uniformly arranged at the bottom center of the diamond wheel.

As an alternative embodiment, the number of the liquid outlets 5 is five, and the liquid outlets are uniformly arranged at the bottom edge of the diamond wheel.

As an alternative embodiment, the number of the liquid outlets 5 is five, and the liquid outlets are not uniformly arranged at the bottom of the diamond wheel.

As shown in fig. 2, in the present embodiment, the dressing assembly 4 further includes a moving arm 43 that moves relative to the polishing pad 1, and a frame 42 that drives the moving arm 43 to rotate, a dressing end 41 is provided on the moving arm 43, and an infusion line 6 communicating with the liquid outlet 5 is provided in the moving arm 43 and the frame 42. The infusion pipeline 6 comprises a main pipeline 61 and a branch pipeline 62 communicated with the main pipeline 61, the main pipeline 61 is arranged in the frame 42 and the moving arm 43, one end of the main pipeline 61 is communicated with a liquid container (not shown in the figure), and the liquid container is filled with liquid; the other end of the main conduit 61 is connected to the liquid outlet 5 provided on the fixing base 411, a branch conduit 62 is provided at the liquid outlet 5, the branch conduit 62 is provided toward the polishing pad 1, and the liquid in the liquid container is uniformly sprayed on the contact area 3 of the polishing pad 1 through the main conduit 61 and the branch conduit 62.

As shown in fig. 5, as an alternative embodiment, the bottom of the moving arm 43 is provided with the liquid outlet 5, in this case, a main pipeline 61 is disposed in the frame 42 and the moving arm 43, a diversion block 44 is disposed in the moving arm 43, one end of the main pipeline 61 is connected to the liquid container, and the other end is communicated with the diversion block 44, and the liquid in the main pipeline 61 is uniformly and equally distributed to a plurality of branch pipelines 62 by the arrangement of the diversion block 44, wherein the branch pipelines 62 are disposed toward the polishing pad 1, so that the liquid can be uniformly sprayed on the contact region 3 of the polishing pad 1.

As shown in fig. 3, as an alternative embodiment, a main conduit 61 and a branch conduit 62 are provided on the outer circumferential wall of the fixed base 411, a storage space 413 is opened inside the fixed base 411, and the main conduit 61 and the branch conduit 62 are communicated with the storage space 413, the main conduit 61 delivers liquid into the storage space 413, and the liquid is uniformly sprayed on the contact area 3 of the polishing pad 1 by the branch conduit 62.

The specific working process is as follows: the wafer 2 is placed on the polishing pad 1 for polishing, impurities left on the surface of the polishing pad 1 after the wafer 2 is ground are removed through the dressing assembly 4 in the polishing process, and the liquid in the liquid container is uniformly sprayed on the contact area 3 of the polishing pad 1 through the main pipeline 61 in the moving process of the dressing assembly 4, so that the uniformity of the distribution of the liquid on the polishing pad 1 is ensured.

It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.