阅读说明：本技术 可释放负氧离子的半导体复合材料及其制备方法和应用 (Semiconductor composite material capable of releasing negative oxygen ions and preparation method and application thereof ) 是由 严春杰 吴艳 李凌曜 王洪权 海书杰 刘亚楠 于 2019-12-16 设计创作，主要内容包括：本发明公开一种可释放负氧离子的半导体复合材料,包括：二氧化钛和氧化锌,二氧化钛和氧化锌的重量比为1～2:1；还提供一种可释放负氧离子的半导体复合材料的制备方法；还提供了一种可释放负氧离子的半导体复合材料在装潢材料中的应用。本发明公开的可释放负氧离子的半导体复合材料,成本低廉,利用半导体复合材料成分之间的界面复合作用,使之能接受室内光激发而进行快速电子传递,具有释放负氧离子的有益效果。(The invention discloses a semiconductor composite material capable of releasing negative oxygen ions, which comprises: titanium dioxide and zinc oxide, wherein the weight ratio of the titanium dioxide to the zinc oxide is 1-2: 1; also provides a preparation method of the semiconductor composite material capable of releasing negative oxygen ions; also provides the application of the semiconductor composite material capable of releasing negative oxygen ions in decorative materials. The semiconductor composite material capable of releasing negative oxygen ions disclosed by the invention is low in cost, can be subjected to indoor light excitation to carry out rapid electron transfer by utilizing the interface composite action among the components of the semiconductor composite material, and has the beneficial effect of releasing negative oxygen ions.)

1. A negative oxygen ion releasable semiconductor composite, comprising: the titanium dioxide-zinc oxide composite material comprises titanium dioxide and zinc oxide, wherein the weight ratio of the titanium dioxide to the zinc oxide is 1-2: 1.

2. A negative oxygen ion releasable semiconductor composite, comprising: the weight ratio of the titanium dioxide to the zinc oxide is 1-2: 1, and the weight ratio of the sum of the titanium dioxide and the zinc oxide to the ferric oxide is 1-2: 1.

3. A negative oxygen ion releasable semiconductor composite, comprising: the weight ratio of the titanium dioxide to the zinc oxide is 1-2: 1, the weight ratio of the sum of the titanium dioxide and the zinc oxide to the ferric oxide is 1-2: 1, and the weight ratio of the sum of the titanium dioxide, the zinc oxide and the ferric oxide to the cuprous oxide is 5-19: 1.

4. A negative oxygen ion releasable semiconductor composite, comprising: the weight ratio of the titanium dioxide to the zinc oxide is 1-2: 1, the weight ratio of the total weight of the titanium dioxide and the zinc oxide to the ferric oxide is 1-2: 1, the weight ratio of the total weight of the titanium dioxide, the zinc oxide and the ferric oxide to the cuprous oxide is 5-19: 1, and the weight ratio of the total weight of the titanium dioxide, the zinc oxide, the ferric oxide and the cuprous oxide to the zinc simple substance is 11-50: 1.

5. The method for preparing a negative oxygen ion releasable semiconductor composite according to claim 1, wherein the titanium dioxide-zinc oxide semiconductor composite is prepared by mixing titanium dioxide and zinc oxide in the above weight ratio and then sufficiently grinding the mixture.

6. The method for preparing the semiconductor composite material capable of releasing negative oxygen ions according to claim 2, wherein the titanium dioxide, the zinc oxide and the ferric oxide are mixed and fully ground according to the weight ratio to obtain the titanium dioxide-zinc oxide-ferric oxide semiconductor composite material.

7. The method for preparing the semiconductor composite material capable of releasing the negative oxygen ions according to claim 3, wherein the titanium dioxide, the zinc oxide, the ferric oxide and the cuprous oxide are mixed and fully ground according to the weight ratio to obtain the titanium dioxide-zinc oxide-ferric oxide-cuprous oxide semiconductor composite material.

8. The method for preparing the semiconductor composite material capable of releasing the negative oxygen ions, according to the weight ratio, wherein the titanium dioxide, the zinc oxide, the ferric oxide, the cuprous oxide and the zinc simple substance are fully mixed and then fully ground to obtain the titanium dioxide-zinc oxide-ferric oxide-cuprous oxide-zinc semiconductor composite material.

9. Use of the negative oxygen ion releasable semiconductor composite according to any one of claims 1 to 8 in decorative materials.

Technical Field

The invention relates to the field of materials, in particular to a semiconductor composite material capable of releasing negative oxygen ions, and a preparation method and application thereof.

Background

The negative ions in the air are as important as vitamins in food, and are called as 'air vitamins' and 'longevity elements', and preventive medicine scientific research proves that the content of the negative ions in the air is the key for measuring the quality of the air. According to the theory adopted by the joint committee on atmosphere of the international union on geodetics and geophysics, the molecular formula of the air negative ion, namely the negative oxygen ion is O₂ ^-(H₂O)_nOr OH (H)₂O)_nOr CO₄ ^-(H₂O)_nScientific research shows that negative oxygen ions can be combined with positively charged particles such as bacteria, dust, smoke and the like and are aggregated into balls to fall to the ground, thereby playing the roles of sterilization and elimination of peculiar smell (peculiar smell generated by cigarette smoke, harmful gas released from decoration materials and the like). When the concentration of negative oxygen ions in the indoor air reaches 200000/cm³In the process, the amount of floating dust in the air is reduced by more than 98%, the smaller the diameter of the floating dust is, the more easily the floating dust is precipitated under the action of negative oxygen ions, so that in the air containing high-concentration negative oxygen ions, tiny dust, bacteria, viruses and the like with the diameter below micrometers are almost zero, and therefore, the amount of the negative oxygen ions is one of important standards for judging whether the air is fresh or not. Linjinming and the like in the environment, health and negative oxygen ions consider that in air containing high-concentration small-particle-size negative oxygen ions, PM2.5, bacteria, viruses and the like are almost zero, the dust removal rate is as high as 98%, and therefore, the negative oxygen ions have great significance for human health and development of human society.

The potential difference can generate permanent weak current to release negative oxygen ions. According to the regulations of the world health organization, when the concentration of negative oxygen ions in the air is not less than 1000-1500/cm³It is considered to be fresh air. The negative oxygen ions have excellent deodorization performance, can keep good living space, can release various trace elements required by a human body, is beneficial to the health of the human body, and can cause nerve reflex through stimulation to the respiratory tract or the skin of the human body and influence various systems of the human body, thereby playing the effects of promoting metabolism, preventing influenza, enhancing the disease resistance of the organism and restoring the balance of the human body. The negative oxygen ion is confirmed to have killing effect in the medical fieldThe main mechanism of the effective means for bacteria and air purification is that after negative oxygen ions are combined with bacteria, the bacteria are caused to generate structural change or energy transfer, so that the bacteria die. Medical research shows that negative oxygen ions in the air can increase the oxygen content in blood, are beneficial to blood oxygen transportation, absorption and utilization, have the effects of promoting human metabolism, improving human immunity, enhancing human body muscle energy, adjusting body function balance and the like, and have particularly obvious medical health care effect on human bodies in plateau anoxic regions.

According to the report of Japanese lapping news, the Japanese songwang electric appliance is cooperated with an ore research institute, and the nano-level tourmaline and an exciting agent are mixed into the polyester stock solution to produce the special terylene, so as to jointly develop the fabric which can continuously generate negative oxygen ions under the 'standing' condition; a new negative oxygen ion product "IONAGE" is obtained by micronizing radioactive ore (tourmaline), mixing, and attaching to fabric; only the radioactive mineral micro powder and the far infrared mineral powder are attached to the fabric layer by layer in the Japanese warehouse to improve the negative ionization effect of the fabric and produce the 'HOLIC' fabric, the fabric with the size of A4 paper generates 150 negative ions/cm in the air³Close to the effect of negative oxygen ions in forests, but with a certain radioactivity.

So far, the negative oxygen ion powder in the market is nano-scale iron powder, and negative oxygen ions are generated by electric shock, so that the negative oxygen ion powder has the defect of strong electromagnetic radiation. There is currently no report on the application of heterostructure semiconductor composites to negative oxygen ions.

Disclosure of Invention

In view of the above, embodiments of the present invention provide a semiconductor composite material capable of releasing negative oxygen ions, which can be applied in decorative materials, so as to solve the technical problem that a semiconductor composite material is lacking in the prior art to generate negative oxygen ions in air.

In order to achieve the above technical objective, an embodiment of the present invention provides a semiconductor composite material capable of releasing negative oxygen ions, including: the titanium dioxide-zinc oxide composite material comprises titanium dioxide and zinc oxide, wherein the weight ratio of the titanium dioxide to the zinc oxide is 1-2: 1.

There is also provided a negative oxygen ion releasable semiconductor composite comprising: the weight ratio of the titanium dioxide to the zinc oxide is 1-2: 1, and the weight ratio of the sum of the titanium dioxide and the zinc oxide to the ferric oxide is 1-2: 1.

There is also provided a negative oxygen ion releasable semiconductor composite comprising: the weight ratio of the titanium dioxide to the zinc oxide is 1-2: 1, the weight ratio of the sum of the titanium dioxide and the zinc oxide to the ferric oxide is 1-2: 1, and the weight ratio of the sum of the titanium dioxide, the zinc oxide and the ferric oxide to the cuprous oxide is 5-19: 1.

There is also provided a negative oxygen ion releasable semiconductor composite comprising: the weight ratio of the titanium dioxide to the zinc oxide is 1-2: 1, the weight ratio of the total weight of the titanium dioxide and the zinc oxide to the ferric oxide is 1-2: 1, the weight ratio of the total weight of the titanium dioxide, the zinc oxide and the ferric oxide to the cuprous oxide is 5-19: 1, and the weight ratio of the total weight of the titanium dioxide, the zinc oxide, the ferric oxide and the cuprous oxide to the zinc simple substance is 11-50: 1.

The titanium dioxide and the zinc oxide are mixed and fully ground according to the weight ratio to prepare the titanium dioxide-zinc oxide semiconductor composite material.

According to the weight ratio, mixing titanium dioxide, zinc oxide and ferric oxide, and then fully grinding to obtain the titanium dioxide-zinc oxide-ferric oxide semiconductor composite material.

According to the weight ratio, mixing titanium dioxide, zinc oxide, ferric oxide and cuprous oxide, and then fully grinding to obtain the titanium dioxide-zinc oxide-ferric oxide-cuprous oxide semiconductor composite material.

According to the weight ratio, titanium dioxide, zinc oxide, ferric oxide, cuprous oxide and zinc simple substances are mixed and fully ground to obtain the titanium dioxide-zinc oxide-ferric oxide-cuprous oxide-zinc semiconductor composite material.

Also provides an application of the semiconductor composite material capable of releasing negative oxygen ions in decorative materials.

Compared with the prior art, the invention has the beneficial effects that: the semiconductor composite material capable of releasing the negative oxygen ions and the preparation method thereof are provided, the cost is low, the environment is friendly, and the semiconductor composite material can be directly applied to the release of the negative oxygen ions; the semiconductor composite material is mainly subjected to the interface recombination effect among titanium dioxide, zinc oxide, ferric oxide, cuprous oxide and zinc, so that the semiconductor composite material can be subjected to indoor light excitation to carry out rapid electron transfer, and the concentration of indoor negative oxygen ions reaches 1000-2500/cm³The method conforms to the negative oxygen ion concentration standard defined by fresh air, and shows the great development potential of the semiconductor composite material in the field of negative oxygen ions.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.