阅读说明：本技术 电子器件的制造方法及电子器件 (Method for manufacturing electronic device and electronic device ) 是由 井上裕康 岸川英司 赤对真人 于 2018-12-12 设计创作，主要内容包括：本发明的一个实施方式的电子器件(1)的制造方法具备：准备工序,是准备在基板(10)上设有第1电极层(20)的带有电极的基板(2)的准备工序,第1电极层具有第1导电层(21)和设于第1导电层上的第2导电层(22),在第1电极层的缘部的规定区域(A)的至少一部分,形成有在从基板的厚度方向观察时第2导电层相对于第1导电层向外侧突出的檐部(24)；器件功能部形成工序,在第1电极层上形成器件功能部(30)；第2电极层形成工序,以将第2电极层的一部分配置于第1电极层的规定区域上的方式,在器件功能部上形成第2电极层；以及非导电部形成工序,在第2电极层形成工序前,在规定区域的至少一部分上形成非导电部(40)。(A method for manufacturing an electronic device (1) according to an embodiment of the present invention includes: a preparation step of preparing a substrate (2) with an electrode, wherein a 1 st electrode layer (20) is provided on a substrate (10), the 1 st electrode layer has a 1 st conductive layer (21) and a 2 nd conductive layer (22) provided on the 1 st conductive layer, and a brim (24) in which the 2 nd conductive layer protrudes outward from the 1 st conductive layer when viewed in the thickness direction of the substrate is formed in at least a part of a predetermined region (A) at the edge of the 1 st electrode layer; a device function part forming step of forming a device function part (30) on the 1 st electrode layer; a 2 nd electrode layer forming step of forming a 2 nd electrode layer on the device functional portion so that a part of the 2 nd electrode layer is disposed on a predetermined region of the 1 st electrode layer; and a non-conductive portion forming step of forming a non-conductive portion (40) on at least a part of the predetermined region before the 2 nd electrode layer forming step.)

1. A method for manufacturing an electronic device includes:

a preparation step of preparing an electrode-attached substrate having a 1 st electrode layer provided on a substrate, the 1 st electrode layer having a 1 st conductive layer and a 2 nd conductive layer provided on a side opposite to the substrate with respect to the 1 st conductive layer, and forming a brim portion in which the 2 nd conductive layer protrudes outward with respect to the 1 st conductive layer when viewed from a thickness direction of the substrate, in at least a part of a predetermined region of an edge portion of the 1 st electrode layer;

a device functional portion forming step of forming a device functional portion including one or more functional layers on the 1 st electrode layer of the electrode-attached substrate;

a 2 nd electrode layer forming step of forming a 2 nd electrode layer on the device functional portion, and forming the 2 nd electrode layer so that a part of the 2 nd electrode layer is disposed on the predetermined region; and

and a non-conductive portion forming step of forming a non-conductive portion on the at least a part of the predetermined region before the 2 nd electrode layer forming step.

2. The method of manufacturing an electronic device according to claim 1,

in the non-conductive portion forming step, the non-conductive portion is formed over the entire predetermined region.

3. The method of manufacturing an electronic device according to claim 1 or 2,

in the device function portion forming step, the device function portion is formed inside the 1 st electrode layer as viewed in a thickness direction of the substrate.

4. The method for manufacturing an electronic device according to any one of claims 1 to 3,

in the non-conductive portion forming step, the non-conductive portion is formed so as to insulate the protrusion from the 2 nd electrode layer, assuming that the eave portion is deformed and the protrusion is formed on the side opposite to the substrate.

5. The method for manufacturing an electronic device according to any one of claims 1 to 3,

the 2 nd conductive layer has a protrusion on a side opposite to the substrate in the at least a part of the predetermined region,

in the non-conductive portion forming step, the non-conductive portion is formed so as to insulate the protrusion from the 2 nd electrode layer.

6. The method for manufacturing an electronic device according to any one of claims 1 to 5,

the non-conductive portion includes an insulating material.

7. The method for manufacturing an electronic device according to any one of claims 1 to 5,

in the non-conductive portion forming step, a photosensitive resin composition is applied to the at least a part of the predetermined region, and the photosensitive resin composition is cured by light irradiation, thereby forming the non-conductive portion.

8. The method for manufacturing an electronic device according to any one of claims 1 to 5,

the material of the non-conductive portion is a material contained in one or more functional layers included in the device functional portion.

9. The method for manufacturing an electronic device according to any one of claims 1 to 8,

the 1 st conductive layer has at least one metal selected from silver, gold, aluminum, copper, iron, palladium, rhodium, titanium, chromium, and molybdenum, or an alloy containing the one metal.

10. The method for manufacturing an electronic device according to any one of claims 1 to 9,

the 1 st electrode layer further has a metal oxide layer between the 1 st conductive layer and the substrate.

11. The method for manufacturing an electronic device according to any one of claims 1 to 10,

the preparation step includes:

forming a 1 st material layer and a 2 nd material layer in this order on the substrate, wherein the 1 st material layer contains the same material as the 1 st conductive layer, and the 2 nd material layer contains the same material as the 2 nd conductive layer; and

forming the 1 st electrode layer by patterning the 1 st material layer and the 2 nd material layer into a predetermined pattern by etching,

the material of the 2 nd conductive layer is a material whose etching rate is slower than that of the material of the 1 st conductive layer in the etching.

12. The method for manufacturing an electronic device according to any one of claims 1 to 11,

at least one functional layer included in the device functional portion is a light-emitting layer including an organic material.

13. An electronic device is provided with:

a substrate;

a 1 st electrode layer provided on the substrate;

a device function portion provided on the 1 st electrode layer and including one or more functional layers;

a 2 nd electrode layer provided on the device functional portion, a part of the 2 nd electrode layer being located on a predetermined region of an edge portion of the 1 st electrode layer; and

a non-conductive portion provided between at least a part of the predetermined region and the 2 nd electrode layer,

the 1 st electrode layer has:

a 1 st conductive layer, and

a 2 nd conductive layer disposed closer to the device functional portion than the 1 st conductive layer,

a projection is formed on the 2 nd conductive layer on the side opposite to the substrate in the at least a part of the predetermined region.

14. The electronic device of claim 13,

the non-conductive portion is provided over the entire predetermined region.

15. The electronic device of claim 13 or 14,

the device function portion is disposed inside the 1 st electrode layer when viewed from a thickness direction of the substrate.

16. The electronic device according to any one of claims 13 to 15,

the non-conductive portion includes an insulating material.

17. The electronic device according to any one of claims 13 to 15,

the non-conductive portion is a cured product of a photosensitive resin composition.

18. The electronic device according to any one of claims 13 to 15,

the material of the non-conductive portion is a material contained in one or more functional layers included in the device functional portion.

19. The electronic device according to any one of claims 13 to 18,

the 1 st conductive layer has one metal selected from silver, gold, aluminum, copper, iron, palladium, rhodium, titanium, chromium, and molybdenum, or an alloy containing the one metal.

20. The electronic device according to any one of claims 13 to 19,

the 1 st electrode layer further has a metal oxide layer between the 1 st conductive layer and the substrate.

21. The electronic device according to any one of claims 13 to 20,

at least one functional layer included in the device functional portion is a light-emitting layer including an organic material.

Technical Field

The invention relates to a method for manufacturing an electronic device and an electronic device.

Background

An electronic device includes a substrate with an electrode, which includes a substrate and a 1 st electrode layer provided on the substrate, a device function portion, and a 2 nd electrode layer. An electronic device is manufactured by forming a device function portion and a 2 nd electrode layer in this order on a 1 st electrode layer of a substrate with electrodes.

As an example of the substrate with an electrode, there is a transparent conductor described in patent document 1. The transparent conductor is a laminate comprising a transparent substrate, a 1 st high refractive index layer, a transparent metal film, and a 2 nd high refractive index layer in this order. The multilayer structure portion including the 1 st high refractive index layer, the transparent metal film, and the 2 nd high refractive index layer functions as the 1 st electrode layer.

Disclosure of Invention

Problems to be solved by the invention

Patent document 1 discloses, for example, the following method as a method for producing a 1 st electrode layer including a 1 st high refractive index layer, a transparent metal film, and a 2 nd high refractive index layer. First, a 1 st high refractive index layer, a transparent metal film, and a 2 nd high refractive index layer are formed on a transparent substrate. Thereafter, the multilayer structure portion including the 1 st high refractive index layer, the transparent metal film, and the 2 nd high refractive index layer was patterned into a desired shape using an etching solution, thereby forming a 1 st electrode layer.

However, since the 1 st high refractive index layer, the transparent metal film, and the 2 nd high refractive index layer are different in material, their etching rates are also different. Therefore, when the 1 st electrode layer is formed as described above, the 2 nd high refractive index layer protrudes outward from the edge portion of the transparent metal film when viewed from the thickness direction of the multilayer structure portion, and the protruding portion from the transparent metal film among the 2 nd high refractive index layers forms the eaves portion. In the case of manufacturing an electronic device using the 1 st electrode layer having the overhang, the overhang may be bent to the side opposite to the substrate to form a protrusion during the manufacturing process. When the projections are formed, sufficient insulation between the 1 st electrode layer and the 2 nd electrode layer including the projections cannot be secured, and thus the 1 st electrode layer and the 2 nd electrode layer are short-circuited or current leakage occurs.

Accordingly, an object of the present invention is to provide a method for manufacturing an electronic device and an electronic device, which can more reliably insulate a 1 st electrode layer from a 2 nd electrode layer.

Means for solving the problems

One aspect of the present invention includes: a preparation step of preparing an electrode-attached substrate having a 1 st electrode layer provided on a substrate, the 1 st electrode layer having a 1 st conductive layer and a 2 nd conductive layer provided on a side opposite to the substrate with respect to the 1 st conductive layer, and forming a brim portion in which the 2 nd conductive layer protrudes outward with respect to the 1 st conductive layer when viewed from a thickness direction of the substrate, in at least a part of a predetermined region of an edge portion of the 1 st electrode layer; a device functional portion forming step of forming a device functional portion including one or more functional layers on the 1 st electrode layer of the electrode-equipped substrate; a 2 nd electrode layer forming step of forming a 2 nd electrode layer on the device functional portion, and forming the 2 nd electrode layer so that a part of the 2 nd electrode layer is disposed on the predetermined region; and a non-conductive portion forming step of forming a non-conductive portion in the at least a part of the predetermined region before the 2 nd electrode layer forming step.

In the manufacturing method, a non-conductive portion is formed in at least a part of the predetermined region before the 2 nd electrode layer forming step in the non-conductive portion forming step. Thus, even if the eaves portion of the 1 st electrode layer of the electrode-attached substrate prepared in the preparation step is bent, for example, to the opposite side of the substrate to form a protrusion, a non-conductive portion is provided between the protrusion and the 2 nd electrode layer. Therefore, the 1 st electrode layer and the 2 nd electrode layer can be insulated more reliably.

In the non-conductive portion forming step, the non-conductive portion may be formed in the entire predetermined region. In this case, even if the protrusion is generated by deformation of the brim portion, the non-conductive portion is reliably provided between the protrusion and the 2 nd electrode layer regardless of the position within the predetermined region where the protrusion is formed. Therefore, the 1 st electrode layer and the 2 nd electrode layer can be insulated more reliably.

In the device function portion forming step, the device function portion may be formed inside the 1 st electrode layer as viewed in a thickness direction of the substrate.

In the non-conductive portion forming step, the non-conductive portion may be formed so that the protrusion is insulated from the 2 nd electrode layer when the protrusion is formed on the opposite side of the substrate on the assumption that the brim portion is deformed. This can more reliably insulate the 1 st electrode layer from the 2 nd electrode layer.

The 2 nd conductive layer may have a protrusion on a side opposite to the substrate in the at least a part of the predetermined region, and the non-conductive portion may be formed in the non-conductive portion forming step so as to insulate the protrusion from the 2 nd electrode layer. In this case, since the non-conductive portion is reliably provided between the projection and the 2 nd electrode layer, the 1 st electrode layer and the 2 nd electrode layer can be more reliably insulated.

In the non-conductive portion forming step, the non-conductive portion may be formed by applying a photosensitive resin composition to the at least a part of the predetermined region and curing the photosensitive resin composition by light irradiation. In this case, the non-conductive portion is a cured product of the photosensitive resin composition.

The preparation step may include: a step of sequentially forming a 1 st material layer and a 2 nd material layer on the substrate, the 1 st material layer containing the same material as that of the 1 st conductive layer, and the 2 nd material layer containing the same material as that of the 2 nd conductive layer; and forming the 1 st electrode layer by patterning the 1 st material layer and the 2 nd material layer together into a predetermined pattern by etching, wherein the material of the 2 nd conductive layer may be a material having an etching rate slower than that of the material of the 1 st conductive layer in the etching.

In this case, since the etching rate of the material of the 2 nd material layer serving as the 2 nd conductive layer is slower than the etching rate of the material of the 1 st material layer serving as the 1 st conductive layer, the eaves portion is formed in the 2 nd conductive layer.

An electronic device according to another aspect of the present invention includes: a substrate; a 1 st electrode layer provided on the substrate; a device function portion provided on the 1 st electrode layer and including one or more functional layers; a 2 nd electrode layer provided on the device functional portion, wherein a part of the 2 nd electrode layer is positioned on a predetermined region of an edge portion of the 1 st electrode layer; and a non-conductive portion provided between at least a part of the predetermined region and the 2 nd electrode layer, wherein the 1 st electrode layer includes a 1 st conductive layer and a 2 nd conductive layer provided closer to the device function portion than the 1 st conductive layer, and a protrusion is formed on the 2 nd conductive layer on a side opposite to the substrate in the at least a part of the predetermined region.

In the electronic device, a non-conductive portion is provided between the projection of the 2 nd conductive layer and the 2 nd electrode layer. Therefore, the insulation between the 1 st electrode layer and the 2 nd electrode layer can be ensured more reliably.

The non-conductive portion may be provided over the entire predetermined region. The device function portion may be disposed inside the 1 st electrode layer when viewed in a thickness direction of the substrate.

The non-conductive portion may include an insulating material. Thus, the non-conductive portion can have insulation properties.

The non-conductive portion may be a cured product of the photosensitive resin composition. The material of the non-conductive portion may be a material contained in one or more functional layers included in the device functional portion.

Examples of the material of the above-described 1 st conductive layer may have at least one metal selected from silver, gold, aluminum, copper, iron, palladium, rhodium, titanium, chromium, and molybdenum, or an alloy containing the one metal.

The 1 st electrode layer may further include a metal oxide layer between the 1 st conductive layer and the substrate.

At least one functional layer included in the device functional portion may be a light-emitting layer including an organic material. In this case, the electronic device is an organic electroluminescent device.

Effects of the invention

According to the present invention, it is possible to provide a method for manufacturing an electronic device and an electronic device, which can more reliably insulate the 1 st electrode layer from the 2 nd electrode layer.

Drawings

Fig. 1 is a plan view of an electrode-equipped substrate used in manufacturing an electronic device according to an embodiment.

Fig. 2 is a sectional view taken along line II-II of fig. 1.

Fig. 3 is a diagram for explaining a method of manufacturing an electronic device according to an embodiment.

Fig. 4 is a sectional view taken along line IV-IV shown in fig. 3.

Fig. 5 is a diagram illustrating a modification of the electronic device according to the embodiment.

Fig. 6 is a sectional view taken along line VI-VI of fig. 5.

Detailed Description

Hereinafter, embodiments of the present invention will be described with reference to the drawings. The same elements are denoted by the same reference numerals, and redundant description thereof is omitted. The dimensional ratios in the drawings do not necessarily correspond to the dimensional ratios illustrated.

Fig. 1 is a plan view of an electrode-equipped substrate used in manufacturing an electronic device according to an embodiment. Fig. 2 is a sectional view taken along line II-II of fig. 1. In this embodiment, unless otherwise specified, the electronic device is an organic electroluminescent device (organic EL device) that emits light from the substrate side with electrodes. An example of the organic EL device is an organic EL lighting device. As shown in fig. 1 and 2, in the electrode-equipped substrate 2, an anode layer (1 st electrode layer) 20 is provided on a substrate 10.

[ base plate ]

The substrate 10 has a light-transmitting property with respect to light (including visible light having a wavelength of 400nm to 800 nm) emitted from an organic EL device (electronic device) to be manufactured.

The substrate 10 may have flexibility. The flexibility is a property that allows the substrate to be bent without causing shearing or breaking even when a predetermined force is applied to the substrate. Examples of the flexible substrate 10 include a plastic film and a polymer film, and the thickness thereof is, for example, 30 to 700 μm. The substrate 10 may be glass, and may have a thickness of 0.05mm to 1.1mm, for example. The substrate 10 may further include a shielding layer having a moisture shielding function. The shielding layer may have a function of shielding gas (e.g., oxygen) in addition to a function of shielding moisture.

[ Anode layer ]

The anode layer 20 is provided on the substrate 10. The anode layer 20 has a light-transmitting property with respect to light emitted from the organic EL device to be manufactured. The anode layer 20 may have a network structure. Anode layer 20 is a laminate having a 1 st conductive layer 21 and a 2 nd conductive layer 22. The 2 nd conductive layer 22 is disposed on the opposite side of the substrate 10 from the 1 st conductive layer 21. Anode layer 20 may further have a metal oxide layer 23 between the 1 st conductive layer 21 and the substrate 10. Hereinafter, the anode layer 20 has a metal oxide layer 23 unless otherwise specified. In this case, the anode layer 20 has a 3-layer structure in which the metal oxide layer 23, the 1 st conductive layer 21, and the 2 nd conductive layer 22 are stacked in this order from the substrate 10 side, and has the metal oxide layer 23, the 1 st conductive layer 21, and the 2 nd conductive layer 22.

The 1 st conductive layer 21 is exemplified by a metal layer, for example, having at least one metal selected from silver (Ag), gold (Au), aluminum (Al), copper (Cu), iron (Fe), palladium (Pd), rhodium (Rh), titanium (Ti), chromium (Cr), and molybdenum (Mo), or an alloy containing the above one metal. As the metal layer, silver or a silver alloy is preferably contained. The thickness of the 1 st conductive layer 21 may be a thickness through which light emitted from the organic EL device to be manufactured can pass. The 1 st conductive layer 21 can be formed in the form of a thin film. The thickness of the 1 st conductive layer 21 is, for example, 5nm to 15nm, preferably 7nm to 9 nm.

The 2 nd conductive layer 22 is stacked on the 1 st conductive layer 21. The 2 nd conductive layer 22 is a transparent conductive film having light permeability with respect to light emitted from the organic EL device to be manufactured. The material of the 2 nd conductive layer 22 is different from the material of the 1 st conductive layer 21. For example, in the case where the 1 st conductive layer 21 and the 2 nd conductive layer 22 are etched at the same time (in other words, etched with the same etching solution), the material of the 2 nd conductive layer 22 may be a material having a lower etching rate than the 1 st conductive layer 21. Examples of the material of the 2 nd conductive layer 22 include Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO). The thickness of the 2 nd conductive layer 22 is, for example, 10nm to 100nm, preferably 70nm to 80 nm.

The metal oxide layer 23 is provided between the substrate 10 and the 1 st conductive layer 21. Examples of the material of the metal oxide layer 23 include indium oxide, zinc oxide, tin oxide, and titanium oxide. The thickness of the metal oxide layer 23 may be a thickness that allows light emitted from the organic EL device to be manufactured to pass therethrough. The thickness of the metal oxide layer 23 is, for example, 30nm to 70nm, preferably 50nm to 60 nm.

When the anode layer 20 is viewed from the thickness direction of the substrate 10, the 2 nd conductive layer 22 includes an overhang 24 having an overhang shape with respect to the 1 st conductive layer 21 in at least a predetermined region a of an edge of the anode layer 20. The eaves 24 is a portion of the 2 nd conductive layer 22 that protrudes outward from the 1 st conductive layer 21. Fig. 1 and 2 illustrate a case where the anode layer 20 has a brim portion 24 formed on the entire edge portion thereof, and in fig. 1, the brim portion 24 is hatched for the sake of convenience of explanation. In the organic EL device, the predetermined region a is a region where an edge portion of the anode layer 20 overlaps with a cathode layer constituting a pair with the anode layer 20 when viewed from the thickness direction of the substrate 10.

The anode layer 20 can be formed, for example, as follows. First, a 3 rd material layer, a 1 st material layer, and a 2 nd material layer are sequentially formed on the substrate 10 in a region (for example, the entire surface of the substrate 10) larger than the anode layer formation region of the substrate 10, using the materials of the metal oxide layer 23, the 1 st conductive layer 21, and the 2 nd conductive layer 22, respectively. The 3 rd material layer, the 1 st material layer, and the 2 nd material layer are layers to be the metal oxide layer 23, the 1 st conductive layer 21, and the 2 nd conductive layer 22, respectively.

The 3 rd material layer, the 1 st material layer, and the 2 nd material layer can be formed by, for example, a dry film formation method, a plating method, a coating method, or the like. Examples of the dry film formation method include a vacuum deposition method, a sputtering method, an ion plating method, and a CVD method. Examples of the coating method include an ink jet printing method, a die gap coating method, a micro gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, and a nozzle printing method.

Then, the 3 rd material layer, the 1 st material layer, and the 2 nd material layer formed on the substrate 10 are etched, and the 1 st material layer and the 2 nd material layer are patterned together into a predetermined pattern, whereby the anode layer 20 is obtained on the anode layer formation region. Since the material of the 3 rd material layer, the material of the 1 st material layer and the material of the 2 nd material layer are different from each other, the etching rate is different in the above-mentioned etching. In general, since the 2 nd material layer has a slower etching rate than the 1 st material layer, the foregoing eaves 24 are formed.

Next, an example of a method for manufacturing the organic EL device 1 shown in fig. 3 and 4 using the electrode-attached substrate 2 will be described. The method for manufacturing the organic EL device 1 mainly includes a preparation step, a device functional portion forming step, a non-conductive portion forming step, and a cathode layer forming step (2 nd electrode layer forming step). The respective steps will be explained.

[ preparation Process ]

In the preparation step, the substrate 2 with electrodes shown in fig. 1 and 2 is prepared. In the preparation step, the substrate 2 with electrodes may be prepared by purchasing the substrate 2 with electrodes. Alternatively, the anode layer 20 may be formed on the substrate 10 by using the above-described example of the method for forming the anode layer 20, thereby preparing the substrate 2 with an electrode.

After the preparation step and before the device functional portion forming step, a cleaning step of cleaning (surface treatment) the surface of the substrate 2 having the electrode may be performed, for example.

[ device function portion Forming Process ]

In the device functional portion forming step, the device functional portion 30 is formed on the anode layer 20 of the substrate 2 with electrodes. The device functional portion 30 is formed so as to cover the predetermined region a while exposing a part of the anode layer 20 for external connection. Since the device functional portion 30 covers the predetermined region a, a part of the device functional portion 30 is in contact with the substrate 10.

The device functional portion 43 is a functional portion that participates in the light emission of the organic EL device 1, such as the transfer and recombination of charges, according to the voltage applied to the anode layer 20 and the cathode layer 50. The device function portion 43 has one or more functional layers. Fig. 3 and 4 illustrate an embodiment in which the device functional portion 30 has a single-layer structure, in other words, an embodiment in which the device functional portion 30 is the light-emitting layer 31.

The light-emitting layer 31 is a functional layer having a function of emitting light (including visible light). The light-emitting layer 31 generally contains an organic substance that mainly emits at least one of fluorescence and phosphorescence, or the organic substance and a dopant material that assists the organic substance. Thus, the light-emitting layer 31 is an organic layer (layer containing an organic substance). The dopant material is added, for example, to improve at least one of the light emission efficiency and the light emission wavelength. The organic substance may be a low molecular compound or a high molecular compound. The thickness of the light-emitting layer is, for example, 2nm to 200 nm.

Examples of the organic material that mainly emits at least one of fluorescence and phosphorescence include the following dye-based material, metal complex-based material, and polymer-based material.

(pigment series material)

Examples of the coloring material include cyclopentamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds, pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, quinacridone derivatives, and coumarin derivatives.

(Metal Complex Material)

Examples of the metal complex material include metal complexes having a rare earth metal such as Tb, Eu, and Dy as a central metal, or a structure of oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, quinoline as a ligand such as Al, Zn, Be, Ir, and Pt, and examples of the metal complex material include metal complexes having light emission from a triplet excited state such as iridium complexes and platinum complexes, hydroxyquinoline aluminum complexes, benzoquinolinol beryllium complexes, benzoxazolyl zinc complexes, benzothiazole zinc complexes, azomethyl zinc complexes, porphyrin zinc complexes, and phenanthroline europium complexes.

(Polymer series Material)

Examples of the polymer material include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and materials obtained by polymerizing the above-mentioned dye materials and metal complex-based light-emitting materials.

(dopant Material)

Examples of the dopant material include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squarylium salt derivatives, porphyrin derivatives, styrene-based pigments, tetracene derivatives, pyrazolone derivatives, decacycloalkene, phenoxazinone, and the like.

The light-emitting layer 31 can be formed by a dry film formation method, a coating method, or the like. Examples of the dry film formation method and the coating method are the same as those of the anode layer 20. The light-emitting layer 31 is preferably formed by an inkjet printing method.

The device functional portion 30 may have various functional layers in addition to the light-emitting layer 31. Examples of the functional layer disposed between the anode layer 20 and the light-emitting layer 31 include a hole injection layer and a hole transport layer. Examples of the functional layer disposed between the cathode layer 450 and the light-emitting layer 31 include an electron injection layer and an electron transport layer. The electron injection layer may also be part of the cathode layer 50.

The hole injection layer is a functional layer having a function of improving the efficiency of injecting holes from the anode layer 20 into the light-emitting layer 31. The hole transport layer is a functional layer having a function of improving the efficiency of injecting holes from the hole injection layer (in the embodiment where the hole injection layer is not present, the anode layer) into the light-emitting layer 31. The electron transport layer is a functional layer having a function of improving electron injection efficiency from the electron injection layer (the cathode layer in the embodiment where the electron injection layer is not present) to the light emitting layer 31. The electron injection layer is a functional layer having a function of improving the efficiency of injecting electrons from the cathode layer 50 into the light-emitting layer 31.

The hole injection layer may be an inorganic layer or an organic layer. The hole injection material constituting the hole injection layer may be a low molecular compound or a high molecular compound.

Examples of the low-molecular compound include metal oxides such as vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide, metal phthalocyanine compounds such as copper phthalocyanine, and carbon.

Examples of the polymer compound include polythiophene derivatives such as polyaniline, polythiophene and polyethylene dioxythiophene (PEDOT), polypyrrole, polyphenylene vinylene, polythienylene vinylene, polyquinoline, polyquinoxaline, and derivatives thereof; and conductive polymers such as polymers having an aromatic amine structure in the main chain or side chain.

The optimum value of the thickness of the hole injection layer varies depending on the material used. The thickness of the hole injection layer can be determined appropriately in consideration of the required characteristics, the ease of film formation, and the like. The thickness of the hole injection layer is, for example, 1nm to 1 μm, preferably 2nm to 500nm, and more preferably 5nm to 200 nm.

The hole transport layer is an organic layer containing a hole transport material. The hole-transporting material is not limited as long as it is an organic compound having a hole-transporting function. Examples of the organic compound having a hole-transporting function include polyvinylcarbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine residue in a side chain or a main chain, a pyrazoline derivative, an arylamine derivative, a stilbene derivative, a triphenyldiamine derivative, polyaniline or a derivative thereof, polythiophene or a derivative thereof, polypyrrole or a derivative thereof, polyarylamine or a derivative thereof, poly (p-phenylenevinylene) or a derivative thereof, a polyfluorene derivative, a polymer compound having an aromatic amine residue, and poly (2, 5-thienylenevinylene) or a derivative thereof.

Examples of the hole-transporting material include those described in Japanese patent application laid-open Nos. 63-70257, 63-175860, 2-135359, 2-135361, 2-209988, 3-37992 and 3-152184.

The optimum value of the thickness of the hole transport layer differs depending on the material used. The thickness of the hole transport layer can be determined appropriately in consideration of the required characteristics, the ease of film formation, and the like. The thickness of the hole-transporting layer is, for example, 1nm to 1 μm, preferably 2nm to 500nm, and more preferably 5nm to 200 nm.

The electron transport layer is an organic layer comprising an electron transport material. The electron-transporting material may be a known material. Examples of the electron transporting material constituting the electron transporting layer include oxadiazole derivatives, anthraquinone dimethane or its derivatives, benzoquinone or its derivatives, naphthoquinone or its derivatives, anthraquinone or its derivatives, tetracyanoanthraquinone dimethane or its derivatives, fluorenone derivatives, metal complexes of diphenyldicyanoethylene or its derivatives, diphenoquinone derivatives, or 8-hydroxyquinoline or its derivatives, polyquinoline or its derivatives, polyquinoxaline or its derivatives, and polyfluorene or its derivatives.

The thickness of the electron transport layer can be appropriately determined in consideration of the required characteristics, the ease of film formation, and the like. The thickness of the electron transport layer is, for example, 1nm to 1 μm, preferably 2nm to 500nm, and more preferably 5nm to 200 nm.

The electron injection layer may be an inorganic layer or an organic layer. The material constituting the electron injection layer may be appropriately selected from the most suitable materials according to the kind of the light emitting layer. Examples of the material constituting the electron injection layer include alkali metals, alkaline earth metals, alloys containing 1 or more of alkali metals and alkaline earth metals, oxides, halides, carbonates of alkali metals and alkaline earth metals, and mixtures thereof. Examples of the alkali metal and examples of the alkali metal oxide, halide and carbonate include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, potassium fluoride, rubidium oxide, rubidium fluoride, cesium oxide, cesium fluoride, lithium carbonate and the like. Examples of the alkaline earth metal and the oxide, halide and carbonate of the alkaline earth metal include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium oxide, barium fluoride, strontium oxide, strontium fluoride and magnesium carbonate.

In addition, a layer obtained by mixing a conventionally known electron-transporting organic material with an alkali metal organometallic complex can be used as the electron injection layer.

An example of the layer configuration of the device functional portion 30 is given below. In the following examples of layer structures, the anode layer and the cathode layer are also described in parentheses in order to show the arrangement relationship between the anode layer and the cathode layer and the various functional layers.

(a) (anode layer)/luminescent layer/(cathode layer)

(b) (anode layer)/hole injection layer/light emitting layer/(cathode layer)

(c) (anode layer)/hole injection layer/luminescent layer/electron injection layer/(cathode layer)

(d) (anode layer)/hole injection layer/luminescent layer/electron transport layer/electron injection layer/(cathode layer)

(e) (anode layer)/hole injection layer/hole transport layer/light emitting layer/(cathode layer)

(f) (anode layer)/hole injection layer/hole transport layer/light emitting layer/electron injection layer/(cathode layer)

(g) (anode layer)/hole injection layer/hole transport layer/light emitting layer/electron transport layer/electron injection layer/(cathode layer)

(h) (anode layer)/light-emitting layer/electron injection layer/(cathode layer)

(i) (anode layer)/luminescent layer/electron transport layer/electron injection layer/(cathode layer)

The symbol "/" indicates a junction between the layers on both sides of the symbol "/".

Functional layers other than the light-emitting layer 31 included in the device functional portion 30 can be formed by the same method as the light-emitting layer 31.

The number of the light-emitting layers 31 included in the device functional portion 30 may be 1, or 2 or more. In any 1 of the layer configurations of the configuration examples (a) to (I), when the laminate disposed between the anode layer and the cathode layer is represented by [ structural unit I ], the layer configuration shown in the following (j) can be given as the configuration of the device functional section 30 having the light-emitting layer 31 of 2 layers. The layer structures in which 2 (structural units I) are present may be the same or different from each other.

(j) (Anode layer)/[ structural Unit I ]/Charge generating layer/[ structural Unit I ]/(cathode layer)

The charge generation layer is a layer that generates holes and electrons by applying an electric field. Examples of the charge generation layer include a thin film containing vanadium oxide, ITO, molybdenum oxide, or the like.

When "[ structural unit I ]/charge generation layer" is represented by [ structural unit II ], the structure of an organic EL element having 3 or more light-emitting layers can be a layer structure shown in the following (k).

(k) (Anode layer)/[ structural Unit II ] x/[ structural Unit I ]/(cathode layer)

The symbol "x" represents an integer of 2 or more, and the "[ structural unit II ] x" represents a laminate of [ structural unit II ] in which x layers are laminated. The layer structure in which a plurality of [ structural units II ] exist may be the same or different.

The device function portion 30 may be configured by directly stacking a plurality of light emitting layers 31 without providing a charge generation layer.

[ non-conductive portion Forming Process ]

In the non-conductive portion forming step, the non-conductive portion 40 is formed over the entire predetermined region a. Fig. 3 illustrates a state in which the non-conductive portion 40 is also formed outside the predetermined region a. In the device functional portion forming step, in the embodiment in which the predetermined region a is covered with the device functional portion 30, the non-conductive portion 40 is formed so as to cover the device functional portion 30 on the predetermined region a. The non-conductive portion 40 is formed over the entire predetermined region a.

An example of the material of the non-conductive portion 40 is an insulating material. The nonconductive portion 40 may be a cured product of the photosensitive resin composition. The material of the non-conductive portion 40 may be a material contained in one or more functional layers included in the device functional portion 30.

If the anode layer 20 has the overhang 24, the overhang 24 of the 2 nd conductive layer 22 may be bent to the side opposite to the substrate 10 at the stage of transition from the preparation step to the device functional portion forming step, during the device functional portion forming step, or the like, and the protrusion 25 as a convex portion may be formed on the side opposite to the substrate 10 as shown in fig. 4. Alternatively, when the step of cleaning the electrode-attached substrate 2 is performed between the preparation step and the device functional portion forming step, the protrusion 25 may be generated in the cleaning step.

In the non-conductive portion forming step, the non-conductive portion 40 is formed so as to insulate the protrusion 25 from the cathode layer 50 formed in the cathode layer forming step described later. Specifically, the non-conductive portion 40 is formed so as to embed the protrusion 25. The height t (see FIG. 4) of the protrusion 25 is, for example, 100nm to 1 μm. An example of the height t is 600 nm. As shown in fig. 3 and 4, in the embodiment in which the non-conductive portion 40 is formed after the device functional portion 30 is formed, the non-conductive portion 40 may be formed to a thickness that allows the protrusion 25 to be embedded by the device functional portion 30 and the non-conductive portion 40.

The non-conductive portion 40 in which the projection 25 can be embedded can be designed as follows, for example. The size of the eaves 24 is measured using a preliminary (or test) electrode-attached substrate 2 having the same configuration as the electrode-attached substrate 2 used for manufacturing the organic EL device 1, for example. Based on the measurement result, the shape of the virtual protrusion 25 is estimated in advance. The non-conductive portion 40 is designed to insulate the estimated protrusion 25 from the cathode layer 50.

The non-conductive portion 40 may be formed by a coating method. The coating method may be the same as the example illustrated in the method for forming the anode layer 20. Among the coating methods exemplified, the inkjet printing method is preferred. The nonconductive portion 40 may be formed by a manufacturer by directly applying a coating liquid containing the material of the nonconductive portion 40 to the predetermined region a and drying the coating liquid. In the embodiment in which the nonconductive portion 40 is a cured product of the photosensitive resin composition, the photosensitive resin composition to be the nonconductive portion 40 is applied to the predetermined region a, and then the photosensitive resin composition is cured by light irradiation, thereby forming the nonconductive portion 40.

[ cathode layer Forming Process ]

In the cathode layer forming step, the cathode layer 50 is formed on the device functional portion 30. In the cathode layer forming step, the cathode layer 50 is formed such that the cathode layer 50 protrudes from the predetermined region a side to the outside of the anode layer 20 when viewed from the thickness direction of the substrate 10. Thereby, the cathode layer 50 is formed so as to be disposed on the non-conductive portion 40 on the predetermined region a, and a part of the cathode layer 50 is formed so as to be in contact with the substrate 10. In the present embodiment, for example, the cathode layer 50 may be formed so that the predetermined region a does not surround the device functional portion 30.

The optimum value of the thickness of the cathode layer 50 varies depending on the material used. The thickness of the cathode layer 50 may be set in consideration of electrical conductivity, durability, and the like. The thickness of the cathode layer 50 is usually 10nm to 10 μm, preferably 20nm to 1 μm, and more preferably 50nm to 500 nm.

In order to reflect light from the device function unit 30 (specifically, light from the light-emitting layer) to the anode layer 20 side by the cathode layer 50, the material of the cathode layer 50 is preferably a material having a high reflectance with respect to light (particularly, visible light) from the light-emitting layer 31 included in the device function unit 30. Examples of the material of the cathode layer 50 include alkali metals, alkaline earth metals, transition metals, and metals of group 13 of the periodic table. As the cathode layer 50, a transparent conductive electrode containing a conductive metal oxide, a conductive organic substance, or the like may be used.

Examples of the method for forming the cathode layer 50 include an ink jet method, a die coater method, a gravure printing method, a screen printing method, a coating method such as a coater method, a vacuum deposition method, a sputtering method, and a lamination method of thermocompression bonding a metal thin film.

The organic EL device 1 can be obtained by forming the cathode layer 50 in the cathode layer forming step. The organic EL device 1 may further include a sealing member that seals the device functional section 30. The sealing member is a member for preventing moisture from entering the device functional section 30, and has a moisture shielding function. For external connection, the sealing member is provided on the electrode-equipped substrate 2 so that a part of the anode layer 20 and the cathode layer 50 is exposed from the sealing member.

In the embodiment where the organic EL device 1 further includes a sealing member, the sealing step of sealing the device functional portion 30 with the sealing member may be further provided after the cathode layer forming step. In the sealing step, for example, a sealing member may be bonded to the electrode-attached substrate 2 provided with the cathode layer 50 so as to seal the device functional portion 30.

In the method of manufacturing the organic EL device 1, the organic EL device 1 can be manufactured using the long substrate 2 with electrodes. The long electrode-attached substrate 2 is a substrate in which the anode layer 20 is formed on each of a plurality of device formation regions virtually set along at least the longitudinal direction of the long substrate 10.

When the organic EL device 1 is manufactured using the long electrode-provided substrate 2, the device function portion forming step, the non-conductive portion forming step, and the cathode layer forming step may be performed on each device forming region while conveying the electrode-provided substrate 2 in the longitudinal direction thereof. In this embodiment, the organic EL device 1 is formed for each device formation region by performing the cathode layer formation step. Therefore, a plurality of organic EL devices 1 can be obtained by singulating the device forming regions from the electrode-attached substrate 2 after the cathode layer forming step. In the embodiment including the sealing step, the above-described singulation step may be performed after the sealing step is performed. At least one of the steps of the method for manufacturing the organic EL device 1 may be performed by a roll-to-roll method.

In a mode in which the layers constituting the device function portion 30 are formed by a coating method (for example, an inkjet printing method) while the long electrode-attached substrate 2 is conveyed, the electrode-attached substrate 2 is preferably conveyed horizontally by a conveying mechanism. The substrate 2 with the electrode may be horizontally transported by a plurality of rollers, or may be horizontally transported by an air floating mechanism using air, for example.

As shown in fig. 3 and 4, the organic EL device 1 includes a substrate 10, an anode layer (1 st electrode layer) 20, a device function portion 30, a cathode layer (2 nd electrode layer) 50, and a non-conductive portion 40 provided between the predetermined region a of the anode layer 20 and the cathode layer 50. The anode layer 20, the device function portion 30, the cathode layer 50, and the non-conductive portion 40 are configured and arranged as described above in the manufacturing method. In the organic EL device 1 of the present embodiment, the number of the device functional portions 30 with respect to the substrate 10 is 1.

Since the 2 nd conductive layer 22 of the anode layer 20 has the eaves 24, the eaves 24 may be deformed to form the protrusions 25 (see fig. 4) before the non-conductive portion forming step in the method for manufacturing the organic EL device 1. Depending on the height of the protrusion 25, as shown in fig. 4, the protrusion 25 cannot be completely covered with the device functional portion 30. For example, since the thickness of the device functional portion 30 is usually less than 600nm (e.g., 200nm), if the height of the protrusion 25 is 600nm or more, a part of the protrusion 25 penetrates the device functional portion 30.

In this case as well, in the above-described method for manufacturing the organic EL device (electronic device) 1, the non-conductive portion 40 is formed on the projection 25 because the non-conductive portion 40 is formed on the predetermined region a in the non-conductive portion forming step. Accordingly, the anode layer 20 including the protrusions 25 is insulated from the cathode layer 50, and thus, a short circuit between the anode layer 20 and the cathode layer 50, a current leak, and the like can be prevented, and as a result, the highly reliable organic EL device 1 can be manufactured. By providing the non-conductive portion forming step, short-circuiting between the anode layer 20 and the cathode layer 50, current leakage, and the like can be prevented, and therefore the manufacturing yield of the organic EL device 1 is also improved.

In the embodiment in which the non-conductive portion 40 is formed over the entire predetermined region a, it is not necessary to specify the portion of the predetermined region a where the protrusion 25 is generated. Therefore, the organic EL device 1 in which the above-described defect such as the short circuit caused by the protrusion 25 is prevented can be efficiently manufactured. This further improves the manufacturing yield of the organic EL device 1.

In the embodiment in which the nonconductive portion 40 is a cured product of the photosensitive resin composition, the nonconductive portion 40 can be easily formed while the substrate 2 with the electrode is conveyed. Therefore, the organic EL device 1 can be efficiently manufactured.

(modification example)

In the organic EL device 1 shown in fig. 3 and 4, the device function portion 30 is formed so as to cover the predetermined region a when viewed from the thickness direction of the substrate 10. However, as in the organic EL device 1A shown in fig. 5 and 6, the device function portion 30 may be disposed inside the anode layer 20 as viewed in the thickness direction of the substrate 10. In other words, the surface of the anode layer 20 on which the device functional portion 30 is formed may have a functional portion forming region in which the device functional portion 30 is formed and a functional portion non-forming region surrounding the functional portion forming region, as viewed in the thickness direction of the substrate 10, and the device functional portion 30 may be formed only in the functional portion forming region.

In this case, the non-conductive portion 40 is provided on the predetermined region a, and is provided on a portion between the device functional portion 30 and the predetermined region a in the anode layer 20. Such an organic EL device 1A can be manufactured in the same manner as in the case of the organic EL device 1 except that the device functional portion 30 is formed inside the anode layer 20 as viewed in the thickness direction of the substrate 10 in the device functional portion forming step, and the non-conductive portion is formed on the predetermined region a in the non-conductive portion forming step and is formed in a portion between the device functional portion 30 and the predetermined region a in the anode layer 20. In the method of manufacturing the organic EL device 1A and the organic EL device 1A, the non-conductive portion 40 is provided on the projection 25, and therefore, the same operational advantages as those of the method of manufacturing the organic EL device 1 and the organic EL device 1 are obtained.

In the present modification, the embodiment in which the device functional portion 30 is formed inside has been described, but in the embodiment in which the device functional portion 30 has one or more functional layers, at least one functional layer included in the device functional portion 30 may be provided in the predetermined region a.

Various embodiments of the present invention have been described above. However, the present invention is not limited to the various embodiments illustrated, and is intended to include not only the scope given by the scope of the claims but also all modifications within the meaning and scope equivalent to the scope of the claims.

For example, the non-conductive portion may not be formed in the entire predetermined region. When the protrusion is formed in at least a part of the predetermined region, the non-conductive portion may be formed in at least a part of the predetermined region. For example, if the protrusions can be visually confirmed, the non-conductive portion may be formed only in the protrusion portion in the predetermined region. Alternatively, before the non-conductive portion forming step is performed, for example, when the substrate with the electrode is prepared in the preparation step or immediately before the device functional portion forming step is performed, an inspection step of measuring the shape of the predetermined region and its vicinity by a shape measuring device such as a level difference detector may be performed, and the non-conductive portion may be provided on the projection specified in the inspection. When the inspection step is performed in this manner, in the case where the non-conductive portion is formed by an application method such as an inkjet printing method, the non-conductive portion may be automatically formed so that the projection is embedded by inputting the projection position, the projection height, and the like to the application device based on the inspection result.

The material, thickness, and the like of the non-conductive portion are not limited as long as the 1 st electrode layer and the 2 nd electrode layer are insulated by the non-conductive portion to such an extent that the above-described problems such as current leakage and short circuit do not occur.

The non-conductive portion forming step may be performed before the 2 nd electrode layer forming step. For example, the non-conductive portion forming step may be performed before the device function portion forming step. In this case, the thickness of the non-conductive portion may be such that the protrusion is embedded in the non-conductive portion by the non-conductive portion alone, or may be such that the protrusion can be embedded in the non-conductive portion and the device function portion.

The method of manufacturing the organic EL device is not limited to the case of manufacturing the organic EL device emitting light from the substrate side, and can be applied to the case of manufacturing the organic EL device emitting light from the side opposite to the substrate. Although the embodiment in which the 1 st electrode layer and the 2 nd electrode layer are an anode layer and a cathode layer, respectively, has been described, the 1 st electrode layer may be a cathode layer and the 2 nd electrode layer may be an anode layer. The present invention can also be applied to organic electronic devices other than organic EL devices, for example, organic solar cells, organic photodetectors, organic transistors, and the like. The present invention is not limited to electronic devices using organic materials, and can be applied to electronic devices using inorganic materials, for example, liquid crystal displays and the like.