阅读说明：本技术 一种太赫兹材料制作pet膜的制作方法 (Method for manufacturing PET film by using terahertz material ) 是由 张晓� 许荣 高林 于 2020-05-19 设计创作，主要内容包括：本发明提供一种太赫兹材料制作PET膜的制作方法,涉及PET膜技术领域。实现了提升降低反射效果、制作成本低的效果。该太赫兹材料制作PET膜的制作方法,包括以下步骤：S1、灼烧：选择30×30cm<Sup>2</Sup>的硅基,将选用的硅基置于燃烧炉中进行灼烧,S2、化学清洗：对灼烧后的硅基置于清洗溶液内,进行化学清洗,S3、物理清洗：将酸洗后的硅基置于平板擦洗机内进行物理清洗。该太赫兹材料制作PET膜的制作方法,在制作前对硅基进行灼烧和清洗,硅基去除了杂质,避免了杂质对后续使用的干扰,采用层叠结构的双层金-聚酰亚胺薄膜,降低了双波段反射率,制作成本低,比以往太赫兹材料制作PET膜更具有广阔的应用前景。(The invention provides a method for manufacturing a PET film by using a terahertz material, which relates to the technical field of PET films and realizes the effects of improving and reducing reflection effect and low manufacturing cost 2 The selected silicon substrate is placed in a combustion furnace for burning, and S2, chemical cleaning: and (3) placing the burned silicon substrate into a cleaning solution for chemical cleaning, and S3, physical cleaning: and (4) placing the silicon substrate after acid washing in a flat plate scrubbing machine for physical cleaning. According to the method for manufacturing the PET film by the terahertz material, the silicon substrate is fired and cleaned before manufacturing, impurities are removed from the silicon substrate, interference of the impurities on subsequent use is avoided, the dual-band reflectivity is reduced by adopting the double-layer gold-polyimide film with the laminated structure, the manufacturing cost is low, and the method has a wide application prospect compared with the conventional method for manufacturing the PET film by the terahertz material.)

1. A method for manufacturing a PET film by using a terahertz material is characterized by comprising the following steps:

s1, burning, selecting 30 × 30cm²The selected silicon substrate is placed in a combustion furnace to be burnt;

s2, chemical cleaning: placing the burnt silicon substrate in a cleaning solution for chemical cleaning;

s3, physical cleaning: placing the silicon substrate after acid washing in a flat plate scrubbing machine, and carrying out physical cleaning;

s4, air drying: placing the cleaned silicon substrate in an air dryer for air drying to obtain a silicon substrate for later use;

s5, embossing the non-metal medium film: placing the silicon substrate to be used in a hot press, and stamping the non-metal medium film on the silicon substrate at the temperature of 150 ℃ and 200 ℃;

s6, imprinting gold-polyimide film: stamping the gold-polyimide film onto the non-metal dielectric film through a hot press at the temperature of 150-;

s7, embossed PET film: and (3) impressing the terahertz metamaterial antireflection film obtained in the S6 on the PET film through a hot press under the conditions of 250 ℃ and 280 ℃, so as to obtain the terahertz material PET film.

2. The method for manufacturing the PET film by using the terahertz material as claimed in claim 1, comprising the following steps: according to the operation step in S1, the high temperature burning temperature is 600 ℃ and 700 ℃, and the burning time is 2-3 min.

3. The method for manufacturing the PET film by using the terahertz material as claimed in claim 1, comprising the following steps: according to the operation step in S2, the cleaning solution is an acid solution selected from SPM acid solutions, the SPM acid solution is prepared by mixing 95% concentrated sulfuric acid and 25% hydrogen peroxide according to the ratio of 35:1, and the cleaning time is 15-25min under the conditions that the cleaning temperature is 105-120 ℃.

4. The method for manufacturing the PET film by using the terahertz material as claimed in claim 1, comprising the following steps: according to the operation step in S3, the silicon substrate is horizontally placed on a roller of a flat scrubbing machine, the roller drives the silicon substrate to move forward, the front side of the silicon substrate contacts a brush head rotating in the same direction as the roller to realize physical cleaning, and then the silicon substrate is turned over to physically clean the other side of the silicon substrate.

5. The method for manufacturing the PET film by using the terahertz material as claimed in claim 1, comprising the following steps: and (4) according to the operation step in S4, air-drying the silicon substrate by an air dryer, wherein the air drying temperature is 40-50 ℃, and the air speed is 2.5-3.5 m/S.

6. The method for manufacturing the PET film by using the terahertz material as claimed in claim 1, comprising the following steps: according to the procedure in S6, two gold-polyimide films were formed, and the conductivity of gold was σ_gold==4.561 X107S.m^-1Thickness t =0.2 μm and dielectric constant of polyimide E_plyide=3.5+9.45×10^-3i, thicknessT =15 μm.

Technical Field

The invention relates to the technical field of PET films, in particular to a method for manufacturing a PET film by using a terahertz material.

Background

The PET film is also named as a high-temperature resistant polyester film. Can be widely applied to the fields of magnetic recording, photosensitive materials, electronics, electrical insulation, industrial films, package decoration, screen protection, optical mirror surface protection and the like.

Terahertz waves refer to electromagnetic waves in the frequency range of 0.1-10 THz, with a spectrum between that of radio waves and infrared light. In recent years, with the development of terahertz radiation generation and detection technology, the demand for terahertz functional devices is gradually increased, terahertz functional devices are deeply researched, effective control of terahertz waves is realized, and the terahertz radiation detection device becomes a leading-edge basic research direction acknowledged by the international terahertz academic community at present.

In 2009, researchers suggested that reflection could be reduced by making relief structures, and they etched air columns of different densities in silicon to adjust the ratio of air to silicon, thereby meeting the requirement of impedance matching and reducing reflection. In 2014, another scholars proposed that the terahertz antireflection film is manufactured by utilizing graphene, the impedance value of the graphene changes along with the number of stacked layers, and when the impedance value of the stacked graphene is matched with the impedance values of air and silicon, the effect of reducing reflection can be achieved.

Disclosure of Invention

The invention aims to provide a method for manufacturing a PET film by using a terahertz material. The method for manufacturing the PET film by using the terahertz material can solve the problems of poor reflection effect and high manufacturing cost.

In order to solve the problems of poor reflection reducing effect and high manufacturing cost, the invention provides the following technical scheme: a method for manufacturing a PET film by using a terahertz material comprises the following steps:

s1, burning, selecting 30 × 30cm²And (3) placing the selected silicon substrate in a combustion furnace for burning.

S2, chemical cleaning: and placing the burnt silicon substrate into a cleaning solution for chemical cleaning.

S3, physical cleaning: and (4) placing the silicon substrate after acid washing in a flat plate scrubbing machine for physical cleaning.

S4, air drying: and (4) placing the silicon substrate after being cleaned in an air dryer for air drying to obtain the silicon substrate for later use.

S5, embossing the non-metal medium film: and placing the silicon substrate to be used in a hot press, and stamping the non-metal medium film on the silicon substrate at the temperature of 150 ℃ and 200 ℃.

S6, imprinting gold-polyimide film: and (3) impressing the gold-polyimide film onto the non-metal dielectric film through a hot press under the condition of 200 ℃ at 150-.

S7, embossed PET film: and (3) impressing the terahertz metamaterial antireflection film obtained in the S6 on the PET film through a hot press under the conditions of 250 ℃ and 280 ℃, so as to obtain the terahertz material PET film.

Further, according to the operation step in S1, the temperature of high-temperature burning is 600 ℃ and 700 ℃, and the burning time is 2-3 min.

Further, according to the operation step in S2, the cleaning solution is an acid solution selected from SPM acid solutions, the SPM acid solution is prepared by mixing 95% concentrated sulfuric acid and 25% hydrogen peroxide according to the ratio of 35:1, and the cleaning time is 15-25min under the condition that the cleaning temperature is 105 ℃ and 120 ℃.

Further, according to the operation step in S3, the silicon substrate is horizontally placed on a roller of the flat scrubbing machine, the roller drives the silicon substrate to move forward, the front side of the silicon substrate contacts with a brush head rotating in the same direction as the roller to realize physical cleaning, and then the silicon substrate is turned over to physically clean the other side of the silicon substrate.

Further, according to the operation step in S4, the silicon substrate is air-dried by an air dryer, and the air drying temperature is 40-50 ℃ and the air speed is 2.5-3.5 m/S.

Further, according to the operation in S6, two gold-polyimide films, gold having an electric conductivity of σ_gold==4.561 X107 S.m^-1Thickness t =0.2 μm and dielectric constant of polyimide E_plyide=3.5+9.45×10^-3i, thickness t =15 μm.

The invention provides a method for manufacturing a PET film by using a terahertz material, which has the following beneficial effects:

the silicon substrate is fired and cleaned before manufacturing, impurities are removed from the silicon substrate, interference of the impurities on subsequent use is avoided, the double-layer gold-polyimide film with the laminated structure is adopted, the double-waveband reflectivity is reduced, the manufacturing cost is low, and the method has a wide application prospect compared with the conventional method for manufacturing the PET film by using the terahertz material.

Detailed Description

The invention provides a technical scheme that: a method for manufacturing a PET film by using a terahertz material comprises the following steps:

s1, burning, selecting 30 × 30cm²And (3) placing the selected silicon substrate in a combustion furnace for burning.

S2, chemical cleaning: and placing the burnt silicon substrate into a cleaning solution for chemical cleaning.

S3, physical cleaning: and (4) placing the silicon substrate after acid washing in a flat plate scrubbing machine for physical cleaning.

S4, air drying: placing the cleaned silicon substrate in an air dryer for air drying to obtain a silicon substrate for later use;

s5, embossing the non-metal medium film: and placing the silicon substrate to be used in a hot press, and stamping the non-metal medium film on the silicon substrate at the temperature of 150 ℃ and 200 ℃.

S6, imprinting gold-polyimide film: and (3) impressing the gold-polyimide film onto the non-metal dielectric film through a hot press under the condition of 200 ℃ at 150-.

S7, embossed PET film: and (3) impressing the terahertz metamaterial antireflection film obtained in the S6 on the PET film through a hot press under the conditions of 250 ℃ and 280 ℃, so as to obtain the terahertz material PET film.

Further, according to the operation step in S1, the temperature of high-temperature burning is 600 ℃ and 700 ℃, and the burning time is 2-3 min.

Further, according to the operation step in S2, the cleaning solution is an acid solution selected from SPM acid solutions, the SPM acid solution is prepared by mixing 95% concentrated sulfuric acid and 25% hydrogen peroxide according to the ratio of 35:1, and the cleaning time is 15-25min under the condition that the cleaning temperature is 105 ℃ and 120 ℃.

Further, according to the operation step in S3, the silicon substrate is horizontally placed on a roller of the flat scrubbing machine, the roller drives the silicon substrate to move forward, the front side of the silicon substrate contacts with a brush head rotating in the same direction as the roller to realize physical cleaning, and then the silicon substrate is turned over to physically clean the other side of the silicon substrate.

Further, according to the operation step in S4, the silicon substrate is air-dried by an air dryer, and the air drying temperature is 40-50 ℃ and the air speed is 2.5-3.5 m/S.

Further, according to the operation in S6, two gold-polyimide films, gold having an electric conductivity of σ_gold==4.561 X107 S.m^-1Thickness t =0.2 μm and dielectric constant of polyimide E_plyide=3.5+9.45×10^-3i, thickness t =15 μm.