阅读说明：本技术 感光性树脂组合物、干膜抗蚀剂及树脂组合物与干膜抗蚀剂的硬化物 (Photosensitive resin composition, dry film resist, and cured product of resin composition and dry film resist ) 是由 今泉尚子 于 2018-11-29 设计创作，主要内容包括：本发明的目的在于提供一种感光性树脂组合物,该感光性树脂组合物保有良好的图像分辨率,且减少硬化物的湿热溶出污染,湿热接着性良好。本发明提供的感光性树脂组合物,含有(A)光阳离子聚合引发剂及(B)环氧化合物,前述(A)光阳离子聚合引发剂含有由下述式(1)表示的阴离子与阳离子所形成的盐,式(1)中,R<Sub>1</Sub>至R<Sub>4</Sub>分别独立地表示碳数1至18的烷基或碳数6至14的芳基。但是,R<Sub>1</Sub>至R<Sub>4</Sub>中的至少一者表示碳数6至14的芳基。R<Sub>1</Sub>至R<Sub>4</Sub>,可以分别独立地为具有全氟烷基作为取代基的苯基、或具有氟原子作为取代基的苯基。R<Sub>1</Sub>至R<Sub>4</Sub>可以分别独立地为五氟苯基或双(三氟甲基)苯基。<Image he="311" wi="700" file="DDA0002512609360000011.GIF" imgContent="drawing" imgFormat="GIF" orientation="portrait" inline="no"></Image>(The invention aims to provide a photosensitive resin composition which has good image resolution, reduces the wet and hot dissolution pollution of a cured product and has good wet and hot adhesion. The invention provides a photosensitive resin composition, which contains (A) photo cation polymerization initiator and (B) epoxy compound, wherein the photo cation polymerization initiator (A) contains salt formed by anion and cation represented by the following formula (1), in the formula (1), R 1 To R 4 Each independently represents an alkyl group having 1 to 18 carbon atoms or an aryl group having 6 to 14 carbon atoms. However, R 1 To R 4 At least one of them represents an aryl group having 6 to 14 carbon atoms. R 1 To R 4 Each of these substituents may be independently a phenyl group having a perfluoroalkyl group as a substituent, or a phenyl group having a fluorine atom as a substituent. R 1 To R 4 May each independently be pentafluorophenyl or bis (trifluoromethyl) phenyl.)

1. A photosensitive resin composition comprising (A) a photo cation polymerization initiator and (B) an epoxy compound;

the photo cation polymerization initiator (A) contains a salt formed by an anion represented by the following formula (1) and a cation, and

the (B) epoxy compound contains a compound selected from:

an epoxy compound (b-1) represented by the following formula (2),

An epoxy compound (b-2) represented by the following formula (3),

An epoxy compound (b-3) represented by the following formula (4),

One or more epoxy compounds (b-4) selected from the group of epoxy compounds represented by the following formulae (5) to (7),

An epoxy compound (b-5) which is a co-condensate of a compound represented by the following formula (8) and/or formula (9) with a compound represented by the following formula (10) and/or formula (11),

An epoxy compound (b-6) represented by the following formula (12),

An epoxy compound (b-7) represented by the following formula (13),

An epoxy compound (b-8) represented by the following formula (14),

An epoxy compound (b-9) represented by the following formula (15), and

an epoxy compound (b-10) represented by the following formula (16)

1 or 2 or more epoxy compounds in the formed group;

in the formula (1), R₁To R₄Each independently represents an alkyl group having 1 to 18 carbon atoms or an aryl group having 6 to 14 carbon atoms; however, R₁To R₄At least one of which represents an aryl group having 6 to 14 carbon atoms;

in the formula (2), R₅Each independently represents a glycidyl group or a hydrogen atom, and a plurality of R's are present₅At least 2 of which are glycidyl groups; k represents an average number of repetitions, and is a real number in the range of 0 to 30;

in the formula (3), R₆Each independently represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or a trifluoromethyl group; r₇Represents a hydrogen atom or a glycidyl group, with a plurality of R' s₇When each R is₇May be the same or different; m represents an average number of repetitions, and is a real number in the range of 0 to 30;

in the formula (4), R₈Each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; n represents an average number of repetitions, and is a real number in the range of 4 to 30;

in the formula (6), R₉Each independently represents a hydrogen atom or a glycidyl group;

in the formula (7), R₁₀Each independently represents a hydrogen atom or a glycidyl group;

in the formula (12), R₁₂Each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; p represents an average number of repetitions, and is a real number in the range of 0 to 10;

in the formula (13), q represents an average number of repetitions and is a real number in the range of 0 to 5;

in the formula (14), r represents an average number of repetitions and is a real number in the range of 0 to 6;

in the formula (15), R₁₃Each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; s represents an average number of repetitions, and is a real number in the range of 0 to 30;

in the formula (16), t, u and v each represent an average number of repetitions and are real numbers satisfying the relationship of 2. ltoreq. t + u + v. ltoreq.60.

2. The photosensitive resin composition according to claim 1, wherein R is₁To R₄Each independently having a perfluoroalkyl group as a substituentA phenyl group, or a phenyl group having a fluorine atom as a substituent.

3. The photosensitive resin composition according to claim 2, wherein R is₁To R₄Each independently is pentafluorophenyl or bis (trifluoromethyl) phenyl.

4. The photosensitive resin composition according to any one of claims 1 to 3, wherein (A) the photo cation polymerization initiator contains a salt formed from an anion represented by formula (1) and a cation having an iodine atom or a sulfur atom.

5. A dry film resist obtained by sandwiching the photosensitive resin composition according to any one of claims 1 to 4 with a substrate.

6. A cured product of the photosensitive resin composition according to any one of claims 1 to 4 or the dry film resist according to claim 5.

Technical Field

The present invention relates to a photosensitive resin composition which is used for the production of insulating layers for electronic parts such as MEMS (Micro Electro Mechanical Systems), Micro Mechanical parts, Micro fluid parts, μ -TAS (Micro-Total Analysis Systems), inkjet print head parts, Micro reactor parts, capacitors, sensors (inductors), L IGA parts, dies and dies for Micro injection molding and thermal embossing, screens or stencils for Micro printing, MEMS sensors, semiconductor elements, package parts such as filter elements, bio MEMS and bio-photonic elements (bio-MEMS) and printed circuit boards, which are mounted on mobile terminals and IoT (Internet of Things) parts, and which has excellent resolution, extremely low wet-heat elution and hardening contamination, and excellent adhesion to substrates after a wet-heat test.

Background

Photo-etchable (photo-etching) processable resists can be widely used in semiconductor or MEMS, micromechanical applications. In such applications, the photolithographic process is accomplished by patterned exposure on the substrate followed by development with a developer solution to selectively remove either the exposed or unexposed regions. A photo-etchable resist has a positive type or a negative type, and an exposed portion is a positive type when dissolved in a developer, and similarly, a negative type when not dissolved.

Conventional positive resists based on the diazoquinone-novolac combination are not suitable for use in applications requiring thick films. This limitation of thickness is caused by the higher absorbance of the diazonaphthoquinone type photoactive compound in wavelengths in the near infrared region of the optical spectrum typically used when exposing the resist.

On the other hand, as a negative resist which has solved the problem of the positive resist, a photosensitive epoxy resin composition which contains a polyfunctional epoxy resin and a photopolymerization initiator and is capable of forming a thick film pattern has been proposed (see patent document 1).

Patent document 1 discloses a photosensitive resin composition containing a photopolymerization initiator having a specific structure, which is an antimony compound. This document describes a method of improving characteristics such as good image resolution and adhesion by using a photopolymerization initiator having such a specific structure. However, the photopolymerization initiator containing an antimony fluoride compound has a problem of toxicity of antimony although it has relatively high sensitivity. Many antimony compounds have been referred to as harmful substances, and not only their use is strongly limited, but also hydrogen fluoride is liberated from antimony fluoride-based compounds due to processing conditions, which causes corrosion of metal parts. Therefore, there is inconvenience that a step of avoiding the corrosion failure is added. In addition, when a pressure cooker test (hereinafter referred to as "PCT test") is performed on a cured product alone, the extract water of the cured product obtained from the polymerization of the initiator is strongly acidic, and a large amount of free hydrogen fluoride and an oxidative decomposition product of the resin are eluted.

Patent documents 2 and 3 propose photosensitive resin compositions using a photocationic polymerization initiator of a non-antimony compound having a specific structure in which the central element of the anionic portion is boron or phosphorus. These documents describe that a photosensitive resin composition using a photo cation polymerization initiator other than an antimony compound exhibits sensitivity equal to or higher than that of a photosensitive resin composition using a photo cation polymerization initiator of an antimony compound. However, when a cured product of a composition using a photopolymerization initiator other than antimony compounds described in these documents was subjected to a PCT test, the extracted water thereof showed high conductivity and low pH. Such a cured product is not only insufficient in water resistance or moist heat resistance, but also may cause contamination by acidic dissolved substances in a moist heat environment or a water-resistant environment. Therefore, the photosensitive resin compositions of these documents are strongly limited in applications such as microfluidic components using an aqueous fluid, μ -TAS (micro total analysis system) components, inkjet nozzle components, and the like, and in applications such as electronic packaging applications such as filter elements mounted on mobile information terminals and sensors mounted on IoT components, which require high heat resistance in resin sealing.

[ Prior art documents ]

[ patent document ]

[ patent document 1] Japanese patent No. 4691047 publication

[ patent document 2] Japanese patent No. 6205522 publication

[ patent document 3] Japanese patent No. 5020646.

Disclosure of Invention

[ problems to be solved by the invention ]

The present invention has been made in view of the above circumstances, and an object thereof is to provide a photosensitive resin composition which has good image resolution, is reduced in the contamination of a cured product due to hot and humid elution, and has good hot and humid adhesion.

[ means for solving problems ]

Various aspects of the present invention for solving the above problems are as follows.

[1] A photosensitive resin composition comprising (A) a photo cation polymerization initiator and (B) an epoxy compound;

the photo cation polymerization initiator (A) contains a salt formed by an anion represented by the following formula (1) and a cation, and

the (B) epoxy compound contains a compound selected from:

an epoxy compound (b-1) represented by the following formula (2),

An epoxy compound (b-2) represented by the following formula (3),

An epoxy compound (b-3) represented by the following formula (4),

One or more epoxy compounds (b-4) selected from the group of epoxy compounds represented by the following formulae (5) to (7),

An epoxy compound (b-5) which is a co-condensate of a compound represented by the following formula (8) and/or formula (9) with a compound represented by the following formula (10) and/or formula (11),

An epoxy compound (b-6) represented by the following formula (12),

An epoxy compound (b-7) represented by the following formula (13),

An epoxy compound (b-8) represented by the following formula (14),

An epoxy compound (b-9) represented by the following formula (15), and

an epoxy compound (b-10) represented by the following formula (16)

1 or 2 or more epoxy compounds in the formed group;

(in the formula (1), R₁To R₄Each independently represents an alkyl group having 1 to 18 carbon atoms or an aryl group having 6 to 14 carbon atoms. However, R₁To R₄At least one of them represents an aryl group having 6 to 14 carbon atoms. )

(in the formula (2), R₅Each independently represents a glycidyl group or a hydrogen atom, and a plurality of R's are present₅At least 2 of which are glycidyl groups. k represents an average number of repetitions, and is a real number in the range of 0 to 30. )

(in the formula (3), R₆Each independently represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or a trifluoromethyl group. R₇Represents a hydrogen atom or a glycidyl group, with a plurality of R' s₇When each R is₇May be the same or different. m represents an average number of repetitions, and is a real number in the range of 0 to 30. )

(in the formula (4), R₈Each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. n represents an average number of repetitions, and is a real number in the range of 4 to 30. )

(in the formula (6), R₉Each independently represents a hydrogen atom or a glycidyl group. )

(in the formula (7), R₁₀Each independently represents a hydrogen atom or a glycidyl group. )

(in the formula (12), R₁₂Each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. p represents an average number of repetitions, and is a real number in the range of 0 to 10. )

(in the formula (13), q represents an average number of repetitions and is a real number in the range of 0 to 5.)

(in the formula (14), r represents an average number of repetitions and is a real number in the range of 0 to 6.)

(in the formula (15), R₁₃Each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. s represents an average number of repetitions, and is a real number in the range of 0 to 30. )

(in the formula (16), t, u and v each represent an average number of repetitions and are real numbers satisfying a relationship of 2. ltoreq. t + u + v. ltoreq.60.)

[2]As described above [1]The photosensitive resin composition of item (I), wherein R₁To R₄Each independently is a phenyl group having a perfluoroalkyl group as a substituent, or a phenyl group having a fluorine atom as a substituent.

[3]As described above [2]The photosensitive resin composition of item (I), wherein R₁To R₄Each independently is pentafluorophenyl or bis (trifluoromethyl) phenyl.

[4] The photosensitive resin composition according to any one of the above [1] to [3], wherein the (A) photo cation polymerization initiator contains a salt formed by an anion represented by the formula (1) and a cation having an iodine atom or a sulfur atom.

[5] A dry film resist (dry film resist) obtained by sandwiching the photosensitive resin composition described in any one of [1] to [4] above with a base material.

[6] A cured product of the photosensitive resin composition according to any one of the above items [1] to [4] or the dry film resist according to the above item [5 ].

[ Effect of the invention ]

The photosensitive resin composition of the present invention has excellent resolution, extremely low wet heat elution contamination of a cured product of the composition, and excellent adhesion to a substrate after a wet heat test, and thus can be suitably used for MEMS parts and the like used in applications in which an aqueous fluid is used or applications in which high wet heat resistance is required in resin sealing.

Detailed Description

The present invention will be described below.

The photo cation polymerization initiator (a) contained in the photosensitive resin composition of the present invention contains a salt formed by an anion represented by the formula (1) and a cation.

In the formula (1), R₁To R₄R represents an alkyl group having 1 to 18 carbon atoms or an aryl group having 6 to 14 carbon atoms, respectively₁To R₄At least one of them represents an aryl group having 6 to 14 carbon atoms. That is, R in the formula (1)₁To R₄Any combination of the following.

(i)R₁To R₄One of them is aryl, and the other three are a combination of alkyl.

(ii)R₁To R₄Two of them are aryl groups and the remaining two are combinations of alkyl groups.

(iii)R₁To R₄Three of them are aryl groups, and the other one is a combination of alkyl groups.

(iv)R₁To R₄Are all combinations of aryl groups.

Among the above combinations, the anion of (iii) or (iv) is preferred, and the anion of (iv) is more preferred.

R of formula (1)₁To R₄The alkyl group having 1 to 18 carbon atoms is not limited to a straight chain, a branched chain, or a cyclic one. Specific examples thereof include: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, n-pentyl, isopentyl, tert-pentyl, sec-pentyl, n-hexyl, isohexyl, n-heptyl, sec-heptyl, n-heptylOctyl, n-nonyl, sec-nonyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, cyclopentyl, cyclohexyl and the like.

R of formula (1)₁To R₄Represents an alkyl group having 1 to 18 carbon atoms and may have a substituent. The "alkyl group which may have a substituent" as used herein means an alkyl group in which a hydrogen atom in the structure thereof is substituted with a substituent. The position of the substituent and the number of the substituent are not particularly limited. When the substituent has a carbon atom, R₁To R₄The carbon number of the alkyl group does not include the number of carbon atoms of the substituent. Specifically, for example, an ethyl group having a phenyl group as a substituent is considered to be an alkyl group having 2 carbon atoms.

R of formula (1)₁To R₄The substituent that an alkyl group having 1 to 18 carbon atoms may have is not particularly limited (except for an alkyl group), and examples thereof include: alkoxy, aromatic group, heterocyclic group, halogen atom, hydroxyl group, thiol group, nitro group, alkyl substituted amino group, aryl substituted amino group, unsubstituted amino group (NH)₂Cyano, isocyano group (isocyano group), and the like.

R of formula (1)₁To R₄The alkoxy group which may be contained in the alkyl group having 1 to 18 carbon atoms as a substituent is a substituent in which an oxygen atom is bonded to an alkyl group. Examples of the alkyl group of the alkoxy group include: and R of formula (1)₁To R₄The alkyl group described in the paragraph representing the alkyl group having 1 to 18 carbon atoms is the same.

R of formula (1)₁To R₄The aromatic group which may be substituted by the alkyl group having 1 to 18 carbon atoms is not particularly limited as long as it is a residue obtained by removing one hydrogen atom from the aromatic ring of the aromatic compound. Examples thereof include: phenyl, biphenyl, triphenyl, octaphenyl, tolyl, indenyl, naphthyl, anthryl, fluorenyl, pyrenyl, phenanthryl, and 2,4, 6-trimethylphenyl, and the like.

R of formula (1)₁To R₄The heterocyclic group which may have an alkyl group having 1 to 18 carbon atoms as a substituent(s) may be selected from the group consisting ofThe residue of the compound after removal of one hydrogen atom from the heterocyclic ring is not particularly limited. Examples thereof include: furyl, thienyl, thienothienyl, pyrrolyl, imidazolyl, N-methylimidazolyl, thiazolyl, oxazolyl, pyridyl, pyrazinyl, pyrimidinyl, quinolyl, indolyl, benzopyrazinyl, benzopyrimidinyl, benzothienyl, naphthothienyl, benzofuranyl, benzothiazolyl, pyridothiazolyl, benzimidazolyl, pyridoimidazolyl, N-methylbenzimidazolyl, pyrido-N-methylimidazolyl, benzoxazolyl, pyridooxazolyl, benzothiadiazolyl, pyridothiadiazolyl, benzooxadiazolyl, pyridooxadiazolyl, carbazolyl, Phenoxazinyl (Phenoxazinyl) and Phenothiazinyl (Phenothiazinyl) and the like.

R of formula (1)₁To R₄Examples of the halogen atom as a substituent which the alkyl group having 1 to 18 carbon atoms may have include: fluorine atom, chlorine atom, bromine atom and iodine atom.

R of formula (1)₁To R₄The alkyl-substituted amino group as a substituent which the alkyl group having 1 to 18 carbon atoms may have is not limited to any of monoalkyl-substituted amino group and dialkyl-substituted amino group, and examples of the alkyl group in these alkyl-substituted amino groups include: and R of formula (1)₁To R₄The alkyl group in the paragraph of the alkyl group having 1 to 18 carbon atoms is the same as that described above.

R of formula (1)₁To R₄The aryl group substituted amino group which may be a substituent for the aryl group having 1 to 18 carbon atoms is not limited to any of a monoaryl group substituted amino group and a diaryl group substituted amino group. Examples of the aryl group in these aryl-substituted amino groups include: and R of formula (1)₁To R₄The aromatic group as a substituent which the alkyl group having 1 to 18 carbon atoms may have is the same.

R of formula (1)₁To R₄Specific examples of the aryl group having 6 to 14 carbon atoms include R of the formula (1)₁To R₄The aromatic group as a substituent which the alkyl group having 1 to 18 carbon atoms may have is the same.

R of formula (1)₁To R₄The aryl group having 6 to 14 carbon atoms represented may have a substituent. The term "substituted aryl" as used herein means an aryl group in which a hydrogen atom in the structure thereof is substituted with a substituent. The position of the substituent and the number of the substituent are not particularly limited. When the substituent has a carbon atom, at R₁To R₄The number of carbons of the aryl group does not include the number of carbon atoms of the substituent. Specifically, for example, a phenyl group having an ethyl group as a substituent is regarded as an aryl group having 6 carbon atoms.

R of formula (1)₁To R₄The substituents which the aryl group having 6 to 14 carbon atoms may have include, although not particularly limited to: alkyl group, alkoxy group, aromatic group, heterocyclic group, halogen atom, hydroxyl group, thiol group, nitro group, alkyl-substituted amino group, aryl-substituted amino group, unsubstituted amino group (NH)₂Alkyl), cyano, isocyano and the like.

R of formula (1)₁To R₄Examples of the alkyl group as a substituent which the aryl group having 6 to 14 carbon atoms may have include: and R of formula (1)₁To R₄The alkyl group in the paragraph of the alkyl group having 1 to 18 carbon atoms is the same as that described above.

R of formula (1)₁To R₄Specific examples of the alkoxy group, the aromatic group, the heterocyclic group, the halogen atom, the alkyl-substituted amino group and the aryl-substituted amino group which may be included in the aryl group having 6 to 14 carbon atoms include: and R of formula (1)₁To R₄The alkoxy group, the aromatic group, the heterocyclic group, the halogen atom, the alkyl-substituted amino group and the aryl-substituted amino group, which may be included in the alkyl group having 1 to 18 carbon atoms, are the same.

R in the formula (1)₁To R₄An alkyl group having 1 to 18 carbon atoms and having a halogen atom as a substituent, or an aryl group having 6 to 14 carbon atoms and having a halogen atom as a substituent is preferable, and an alkyl group having 1 to 18 carbon atoms and having a fluorine atom as a substituent, or an aryl group having 6 to 14 carbon atoms and having a fluorine atom as a substituent is more preferable.

The cation forming a salt with the anion represented by the formula (1) is not particularly limited if it is a monovalent cation, but it is preferably an oxonium ion (oxonium ion), ammonium ion (ammonium ion), phosphonium ion (phosphonium ion), sulfonium ion (sulfonium ion) or iodonium ion (iodonium ion), more preferably an ammonium ion, phosphonium ion, sulfonium ion or iodonium ion, and still more preferably a sulfonium ion or iodonium ion.

Examples of the oxonium ion include: oxonium salts such as trimethyloxonium, diethylmethyloxonium, triethyloxonium and tetramethylenemethyloxonium; pyrylium such as 4-methyl-pyrylium, 2,4, 6-trimethylpyranium, 2, 6-di-tert-butylpyranium and 2, 6-diphenylpyranium; benzopyrylium or isochromylium such as 2, 4-dimethylbenzopyrylium (2,4-dimethylchromenium) and 1, 3-dimethylisochromylium.

Examples of ammonium ions include: pyrrolidinium such as N, N-dimethylpyrrolidinium, N-ethyl-N-methylpyrrolidinium, and N, N-diethylpyrrolidinium; imidazolinium such as N, N ' -dimethylimidazolinium, N ' -diethylimidazolinium, N-ethyl-N ' -methylimidazolinium, 1,3, 4-trimethylimidazolinium and 1,2,3, 4-tetramethylimidazolinium; tetrahydropyrimidinium such as N, N' -dimethyltetrahydropyrimidinium; morpholinium such as N, N' -dimethylmorpholinium; piperidinium such as N, N' -diethylpiperidinium; pyridinium such as N-methylpyridinium, N-benzylpyridinium and N-phenacylpyridinium; imidazolium such as N, N' -dimethylimidazolium, quinolinium such as N-methylquinolinium, N-benzylquinolinium, and N-benzoylmethylquinolinium; isoquinolinium such as N-methylisoquinolinium; thiazolium such as benzylbenzothiazolium and benzoylmethylbenzothiazolium; acridinium such as benzylacridinium and phenacridinium.

Examples of the phosphonium ion include: tetraarylphosphonium such as tetraphenylphosphonium, tetra-p-tolylphosphonium, tetra (2-methoxyphenyl) phosphonium, tetra (3-methoxyphenyl) phosphonium and tetra (4-methoxyphenyl) phosphonium; triarylphosphonium such as triphenylbenzylphosphonium, triphenylbenzoylmethylphosphonium, triphenylmethylphosphonium and triphenylbutylphosphonium; tetraalkylphosphonium such as triethylbenzylphosphonium, tributylbenzylphosphonium, tetraethylphosphonium, tetrabutylphosphonium, tetrahexylphosphonium, triethylbenzoylmethylphosphonium and tributylbenzoylmethylphosphonium.

Examples of sulfonium ions include: triphenylsulfonium, tri-p-tolylsulfonium, tri-o-tolylsulfonium, tri (4-methoxyphenyl) sulfonium, 1-naphthyldiphenylsulfonium, 2-naphthyldiphenylsulfonium, tri (4-fluorophenyl) sulfonium, tri-1-naphthylsulfonium, tri-2-naphthylsulfonium, tri (4-hydroxyphenyl) sulfonium, 4- (phenylthio) phenyldiphenylsulfonium, 4- (p-tolylthio) phenyldi-p-tolylsulfonium, 4- (4-methoxyphenylthio) phenylbis (4-methoxyphenyl) sulfonium, 4- (phenylthio) phenylbis (4-fluorophenyl) sulfonium, 4- (phenylthio) phenylbis (4-methoxyphenyl) sulfonium, 4- (phenylthio) phenylbis-p-tolylsulfonium, tri (4-methoxyphenyl) sulfonium, tri (4-o-tolylsulfonium), tri (4-methoxyphenyl) sulfonium, 1-naphthyldiphenylsulfonium, 2-naphthyldiphenylsulfonium, 4- (p-tolylsulfonium, and 4- (phenylthio, [4- (4-biphenylthio) phenyl ] -4-biphenylphenylsulfonium, [4- (2-thianthrenylthio) phenyl ] diphenylsulfonium, bis [4- (diphenyldihydrothio) phenyl ] sulfide, bis [4- { bis [4- (2-hydroxyethoxy) phenyl ] dihydrothio } phenyl ] sulfide, bis {4- [ bis (4-fluorophenyl) dihydrothio ] phenyl ] sulfide, bis {4- [ bis (4-methylphenyl) dihydrothio ] phenyl ] sulfide, bis {4- [ bis (4-methoxyphenyl) dihydrothio ] phenyl ] sulfide, 4- (4-benzoyl-2-chlorophenylthio) phenyl bis (4-fluorophenyl) sulfonium, 4- (4-benzoyl-2-chlorophenylthio) phenyl diphenylsulfonium, and the like, 4- (4-benzoylphenylthio) phenylbis (4-fluorophenyl) sulfonium, 4- (4-benzoylphenylthio) phenyldiphenylsulfonium, 7-isopropyl-9-oxo-10-thia-9, 10-dihydroanthracen-2-ylbis-p-tolylsulfonium, 7-isopropyl-9-oxo-10-thia-9, 10-dihydroanthracen-2-yldiphenylsulfonium, 2- [ (di-p-tolyl) dihydrothio ] thioxanthone, 2- [ (diphenyl) dihydrothio ] thioxanthone, 4- (9-oxo-9H-thioxanthin-2-yl) thiophenyl-9-oxo-9H-thioxanthin-2-ylphenylsulfonium, thiobenzophenanthrenethionium, thiobenzophenanthrenesulphonium, thiobenzosulphonium, thiosulphonium, thio, Triarylsulfonium such as 4- [4- (4-tert-butylbenzoyl) phenylthio ] phenylbis-p-tolylsulfonium, 4- [4- (4-tert-butylbenzoyl) phenylthio ] phenyldiphenylsulfonium, 4- [4- (benzoylphenylthio) ] phenylbis-p-tolylsulfonium, 4- [4- (benzoylphenylthio) ] phenyldiphenylsulfonium, 5- (4-methoxyphenyl) thioanthrenium, 5-phenylthioanthrenium, 5-tolylthioanthrenium, 5- (4-ethoxyphenyl) thioanthrenium and 5- (2,4, 6-trimethylphenyl) thioanthrenium, diphenylbenzylsulfonium, diphenyl4-nitrobenzoylmethylthiosulfonium, diphenylbenzylsulfonium and diphenylmethylthiosulfonium, diarylsulfonium such as diphenylbenzylsulfonium, and diphenylmethylthiosulfonium, diarylsulfonium, Monoaryl sulfonium, dimethylbenzylsulfonium, phenacyltetrahydrothiophenium, dimethylbenzylsulfonium, 4-methoxyphenylmethylbenzylsulfonium, 4-acetylcarbonyloxyphenylmethylbenzylsulfonium, 4-hydroxyphenyl (2-naphthylmethyl) methylthioninium, 2-naphthylmethylbenzylsulfonium, 2-naphthylmethyl (1-ethoxycarbonyl) ethylsulfonium, phenylmethylbenzoylmethylthioninium, 4-hydroxyphenylmethylbenzoylmethylthioninium, 4-methoxyphenylmethylbenzoylmethylthioninium, 4-acetylcarbonyloxyphenylmethylbenzoylmethylthioninium, 2-naphthylmethylbenzoylmethylthioninium, 2-naphthyloctadecylbenzoylmethylsulfonium, and 9-anthracenylmethylbenzoylmethylthioninium, etc., dimethylbenzylsulfonium, benzoylmethyltetrahydrothiophenium, dimethylbenzylsulfonium, tolylsulfonium, Trialkylsulfonium such as benzyltetrahydrothiophenium and octadecylbenzoylmethylsulfonium.

Examples of the iodonium ion include: and iodonium ions such as diphenyliodonium, di-p-tolyliodonium, bis (4-dodecylphenyl) iodonium, bis (4-methoxyphenyl) iodonium, (4-octyloxyphenyl) phenyliodonium, bis (4-decyloxy) phenyliodonium, 4- (2-hydroxytetradecyloxy) phenyliodonium, 4-isopropylphenyl (p-tolyl) iodonium, and 4-isobutylphenyl (p-tolyl) iodonium.

The salt of the anion represented by the formula (1) and the cation can be synthesized by a known method as described in, for example, Japanese patent application laid-open No. 2013-043864. Further, a commercially available CPI-310FG (product name, photo cation polymerization initiator, manufactured by San Apro Co., Ltd.) or the like can be obtained and used.

Specific examples of the salt of the anion represented by the formula (1) and the cation contained in the photocationic polymerization initiator (a) contained in the photosensitive resin composition of the present invention are given below, but not limited thereto.

The content of the photocationic polymerization initiator (a) in the photosensitive resin composition of the present invention is preferably 0.05 to 15% by mass, more preferably 0.07 to 10% by mass, still more preferably 0.1 to 8% by mass, and most preferably 0.5 to 5% by mass, relative to the content of the epoxy compound (B). (A) When the molar absorption coefficient of the photo cation polymerization initiator is high at a wavelength of 300 to 380nm, the amount to be adjusted may be appropriately adjusted in accordance with the volume or thickness of the photosensitive resin composition to be used.

The content of the salt formed by the anion represented by the formula (1) and the cation in the photo cation polymerization initiator (a) is, without particularly limiting the effect of the present invention, preferably 80% by mass or more, more preferably 90% by mass or more, still more preferably 95% by mass or more, and most preferably 100% by mass.

The epoxy compound (B) contained in the photosensitive resin composition of the present invention contains 1 or 2 or more epoxy compounds selected from the group consisting of the epoxy compounds (B-1) to (B-10).

Specific examples of the epoxy compound (b-1) include KM-N L C L (trade name, bisphenol A novolac type epoxy resin, manufactured by Nippon chemical Co., Ltd., epoxy equivalent of 195 to 210g/eq., softening point of 78 to 86 ℃), JeR157 (trade name, bisphenol A novolac type epoxy resin, manufactured by Mitsubishi chemical Co., Ltd., epoxy equivalent of 200 to 220g/eq., softening point of 70 ℃), EPON SU-8 (trade name, bisphenol A novolac type epoxy resin, manufactured by Hexion Co., Ltd., epoxy equivalent of 195 to 230g/eq., softening point of 80 to 90 ℃) and the like.

Examples of the epoxy compound (b-2) include bisphenol A type epoxy compounds, bisphenol F type epoxy compounds, epoxy compounds in which a part or all of alcoholic hydroxyl groups in the structure are epoxidized, specific examples of bisphenol A type epoxy compounds include YD series manufactured by Nissan iron and gold chemical Co., Jer828 series or Jer1000 series manufactured by Mitsubishi chemical Co., and EPIC L ON series manufactured by DIC corporation (various epoxy equivalents and softening points depending ON the average number of repetitions). specific examples of bisphenol F type epoxy compounds include YDF series manufactured by Nissan iron and gold chemical Co., Jer800 series or Jer4000 series manufactured by Mitsubishi chemical Co., and EPIC L ON series manufactured by DIC corporation (various epoxy equivalents and softening points depending ON the average number of repetitions), and specific examples of bisphenol A type epoxy compounds or bisphenol F type epoxy compounds are epoxy compounds having a part or all of alcoholic hydroxyl groups in the structure thereof, epoxy equivalents and softening points thereof are epoxy equivalent compounds manufactured by Nippon iron and epoxy equivalent resins manufactured by Nissan iron and epoxy equivalent resins manufactured by NIPPO corporation, such as NER 2, NER 03, NEEQ, NER 55, NEQ 55 to NEQ 55, NER 2, NEQ 55, NER 2, NEQ 80 to NEQ 80 ℃ and NEE.C.

In the present specification, the number of repetitions of the structural unit in the epoxy compound refers to a number average molecular weight calculated from polystyrene converted from GPC measurement results and a value calculated from the general formula. The number of repetitions of the epoxy compound used in examples described later is a value calculated in this manner.

Specific examples of the epoxy compound (b-3) include NC-3000H and other NC-3000 series (trade name, biphenyl-phenol novolac type epoxy resin, manufactured by Nippon chemical Co., Ltd., epoxy equivalent of 270 to 300g/eq., softening point of 55 to 75 ℃ C.).

Specific examples of the epoxy compound (b-4) include NC-6300H (trade name, manufactured by Nippon chemical Co., Ltd., epoxy equivalent 226 to 238g/eq., softening point 67 to 74 ℃ C.).

The epoxy compound (b-5) can be obtained, for example, by the method described in Japanese patent application laid-open No. 2007-291263.

Specific examples of the epoxy compound (b-6) include EPPN-201 (trade name, manufactured by Nippon chemical Co., Ltd., epoxy equivalent of 180 to 200g/eq., softening point of 65 to 78 ℃), EOCN-1020 series (trade name, manufactured by Nippon chemical Co., Ltd., epoxy equivalent of 190 to 210g/eq., softening point of 55 to 85 ℃) such as EOCN-1020-70, and the like.

Specific examples of the epoxy compound (b-7) include EPPN-501H (trade name, manufactured by Nippon chemical Co., Ltd., epoxy equivalent of 162 to 172g/eq., softening point of 51 to 57 ℃), EPPN-501HY (trade name, manufactured by Nippon chemical Co., Ltd., epoxy equivalent of 163 to 175g/eq., softening point of 57 to 63 ℃), EPPN-502H (trade name, manufactured by Nippon chemical Co., Ltd., epoxy equivalent of 158 to 178g/eq., softening point of 60 to 72 ℃).

Specific examples of the epoxy compound (b-8) include XD-1000 (trade name, manufactured by Nippon chemical Co., Ltd., epoxy equivalent 245 to 260g/eq., softening point 68 to 78 ℃ C.).

Specific examples of the epoxy compound (b-9) include NC-7700 (trade name, manufactured by Nippon chemical Co., Ltd., epoxy equivalent 210 to 250g/eq., softening point 86 to 91 ℃ C.).

Specific examples of the epoxy compound (b-10) include EHPE3150 (trade name, manufactured by Daicel Chemicals, Inc., epoxy equivalent 170 to 190g/eq., softening point 70 to 90 ℃).

The epoxy equivalent and the molecular weight of the epoxy compound (B) contained in the photosensitive resin composition of the present invention are not particularly limited, and the softening point is not particularly limited. When a dry film resist described later is used in direct contact with a photomask, the softening point of the epoxy compound (B) is preferably 40 ℃ or higher, and more preferably 55 ℃ or higher, in order to prevent the photomask from being stained.

The epoxy equivalent in the present specification means a value measured by a method according to JIS K7236. The molecular weight in the present specification means a value of a weight average molecular weight calculated in terms of polystyrene based on a measurement result of gel permeation chromatography. The softening point in the present specification means a value measured by a method according to JIS K7234.

In the photosensitive resin composition of the present invention, components such as an epoxy compound other than the epoxy compounds (b-1) to (b-10), a solvent, an adhesion-imparting agent, a polyol compound, a polyphenol compound, a sensitizer, and an ion scavenger can be optionally selected and used in combination. Any component that can be used in combination is not particularly limited insofar as it does not inhibit the function and effect of the photosensitive resin composition.

The epoxy compounds other than the epoxy compounds (b-1) to (b-10) which can be used in combination in the photosensitive resin composition of the present invention are not particularly limited, and a known glycidyl ether type epoxy compound or alicyclic epoxy compound can be used.

The content of the epoxy compound as an optional component in the photosensitive resin composition of the present invention is not particularly limited as long as the effects of the present invention are not impaired, and it is preferable to use the epoxy compound in an amount of 10 mass% or less in the solid content of the photosensitive resin composition from which the solvent is removed.

The solvent used in combination with the photosensitive resin composition of the present invention is not particularly limited, but is preferably an organic solvent generally used in inks and paints, and a solvent capable of dissolving various components of the photosensitive resin composition, and such organic solvents include ketones such as acetone, ethyl methyl ketone, methyl isobutyl ketone, cyclohexanone, and cyclopentanone, aromatic hydrocarbons such as toluene, xylene, methoxybenzene, and tetramethylbenzene, alcohol ethers such as diglyme (diglyme), dipropylene glycol dimethyl ether, and dipropylene glycol diethyl ether, ethyl lactate, butyl lactate, propyl lactate, ethyl acetate, methyl acetoacetate, ethyl acetoacetate, methyl propionate, ethyl propionate, propyl propionate, isopropyl propionate, methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, methyl-3-methoxypropionate, ethyl-3-ethoxypropionate, propyl-3-methoxypropionate, butyl acetate, butylcellosolve acetate, carbitol acetate, and propylene glycol monoacetate, esters such as α -ethyl lactone, β -propiolactone, γ -butyrolactone, valerolactone, methyl alcohol, methyl cellosolve, and petroleum naphtha, and various solvents such as methyl alcohol, and petroleum naphtha, and petroleum hydrocarbon, can be used alone or in combination with a petroleum solvent.

The content of the solvent in the photosensitive resin composition of the present invention is not particularly limited as long as the effects of the present invention are not impaired, and an amount of 95% by mass or less, preferably 10 to 90% by mass, is usually used in the photosensitive resin composition.

The adhesion-imparting agent usable in combination in the photosensitive resin composition of the present invention is not particularly limited, and a known silane coupling agent, titanium coupling agent or the like can be used. More preferred is a silane coupling agent. These adhesion-imparting agents may be used alone or in combination of two or more.

Specific examples of the silane coupling agent include: 3-chloropropyltrimethoxysilane, vinyltrichlorosilane, vinyltriethoxysilane, vinyltrimethoxysilane, vinyltris (2-methoxyethoxy) silane, 3-methacryloxypropyltrimethoxysilane, 2- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-mercaptopropyltrimethoxysilane, 8-glycidoctyltrimethoxysilane and the like. These coupling agents may be used alone or in combination of two or more.

The content of the adhesion-imparting agent in the photosensitive resin composition of the present invention is not particularly limited as long as the effects of the present invention are not impaired, and the amount of the adhesion-imparting agent used is preferably 15% by mass or less, and more preferably 10% by mass or less, in the solid content of the photosensitive resin composition from which the solvent is removed.

The polyol compound usable in combination in the photosensitive resin composition of the present invention is not particularly limited, but is typically a polyester polyol compound containing a hydroxyl group which reacts with an epoxy group under the influence of a strong acid catalyst. For example, the polyol compounds exemplified in Japanese patent publication No. 5901070 can be used in combination. By using the compound, stress triggering (stress triggering) in the steps of exposure hardening, development and thermal hardening at the time of photo-etching processing can be avoided, shrinkage can be reduced, and cracking of a photosensitive image can be prevented. The content of the polyol compound in the photosensitive resin composition of the present invention is not particularly limited as long as the effect of the present invention is not impaired, and is usually 1 to 30% by mass, and preferably 2 to 25% by mass, based on the total mass of the epoxy compound (B).

The polyhydric phenol compound which can be used in combination in the photosensitive resin composition of the present invention is a compound which can highly cure the crosslinking density of an epoxy compound by heating. For example, the polyhydric phenol compounds exemplified in Japanese patent publication No. 5967824 can be used in combination. By using this compound, a function of imparting low moisture permeability, high adhesiveness, and strong flexibility to the cured resin can be provided. The content of the polyphenol compound in the photosensitive resin composition of the present invention is not particularly limited as long as the effect of the present invention is not impaired, and is usually 3 to 40% by mass, preferably 4 to 30% by mass, and more preferably 5 to 25% by mass, based on the total mass of the epoxy compound (B).

The sensitizer which can be used in combination in the photosensitive resin composition of the present invention is not particularly limited as long as it plays a role of supplying absorbed light energy to the photo cation polymerization initiator. For example, an anthracene compound having an alkoxy group at the 9 th and 10 th positions (9, 10-dialkoxyanthracene derivative) is more preferable as the thioxanthone. Examples of the alkoxy group include: alkoxy groups having 1 to 4 carbon atoms such as methoxy, ethoxy, propoxy and butoxy groups. The 9, 10-dialkoxyanthracene derivative may also have a substituent. Examples of the substituent include: halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom, alkyl groups having 1 to 4 carbon atoms such as methyl group, ethyl group and propyl group, alkyl sulfonate groups, and alkyl carboxylate groups. Examples of the alkyl group in the alkyl sulfonate group or the alkyl carboxylate group include: alkyl groups having 1 to 4 carbon atoms such as methyl, ethyl and propyl. The substitution position of these substituents is preferably the 2-position.

Specific examples of thioxanthones include: 2, 4-dimethylthioxanthone, 2, 4-diethylthioxanthone, 2-chlorothianthrone, 2, 4-diisopropylthioxanthone, and the like. And 2, 4-diethylthioxanthone (for example, product name KayacureDETX-S, manufactured by Nippon Kagaku Co., Ltd.) and 2, 4-diisopropylthioxanthone are preferable.

Examples of the 9, 10-dialkoxyanthracene derivative include: 9, 10-dimethoxyanthracene, 9, 10-diethoxyanthracene, 9, 10-dipropoxyanthracene, 9, 10-dibutoxyanthracene, 9, 10-dimethoxy-2-ethylanthracene, 9, 10-diethoxy-2-ethylanthracene, 9, 10-dipropoxy-2-ethylanthracene, 9, 10-dimethoxy-2-chloroanthracene, 9, 10-dimethoxyanthracene-2-sulfonic acid methyl ester, 9, 10-diethoxyanthracene-2-sulfonic acid methyl ester, 9, 10-dimethoxyanthracene-2-carboxylic acid methyl ester, and the like. These sensitizers may be used alone, or a mixture of a plurality of them may be used.

The content of the sensitizer in the photosensitive resin composition of the present invention is not particularly limited as long as the effect of the present invention is not impaired, and it is preferably 30% by mass or less and more preferably 20% by mass or less with respect to the (a) photo cation polymerization initiator.

The ion scavenger that can be used in combination in the photosensitive resin composition of the present invention is not particularly limited as long as it can reduce adverse effects caused by ions derived from the photo cation polymerization initiator (a). For example, organoaluminum compounds, specifically, there can be mentioned: aluminum alkoxides such as aluminum trimethoxy, aluminum triethoxide, aluminum triisopropoxide, aluminum isopropoxydiethoxide and aluminum tributoxide; phenoxyaluminum such as triphenoxyaluminum and tri-p-methylphenoxyaluminum; aluminum triacetoxy, aluminum tristearate, aluminum tributyl, aluminum tripropionate, aluminum triacetylacetonate, aluminum tristrifluoroacetoacetonate, aluminum triethylacetoacetate, aluminum di (trimethylacetyl) formate of diacetylpyruvic acid, aluminum diisopropoxy (ethylacetoacetate), and the like. These ion scavengers may be used alone or in combination of two or more.

Further, an onium salt compound which generates a weak acid by ultraviolet irradiation can be suitably used as an ion scavenger. Specifically, the anion portion of the onium salt includes the following weak acid structure: alkylsulfonic acids such as methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid and camphorsulfonic acid; trifluoromethane sulfonic acid, pentafluoroethane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, cyclohexane sulfonic acid, adamantane sulfonic acid, dicyclopentadiene sulfonic acid, and the like. These may be used alone or in combination of two or more. The cation portion of the onium salt is not particularly limited as long as it is a monovalent organic cation, but an oxonium ion, ammonium ion, phosphonium ion, sulfonium ion or iodonium ion is more preferable. Ammonium ion, phosphonium ion, sulfonium ion or iodonium ion is more preferable, and sulfonium ion or iodonium ion is still more preferable. The onium salt compound may be used in combination to such an extent that photopolymerization is not significantly inhibited.

The content of the ion scavenger in the photosensitive resin composition of the present invention is not particularly limited as long as the effects of the present invention are not impaired. In the case of the organoaluminum compound, it is preferable to use the organoaluminum compound in an amount of 10 mass% or less in the solid content of the photosensitive resin composition from which the solvent has been removed.

In the case of the onium salt compound, the amount of the onium salt compound is preferably 0.001 to 2% by mass based on the amount of the (a) photocationic polymerization initiator to be used in the present invention.

Various additives such as a thermoplastic resin, a colorant, a thickener, an antifoaming agent, and a leveling agent may be optionally used in the photosensitive resin composition of the present invention. Examples of the thermoplastic resin include: polyethersulfones, polystyrenes, polycarbonates, and the like. The coloring agent may be exemplified by: phthalocyanine blue (phthalocyanine blue), phthalocyanine green, iodine green (iodine green), crystal violet (crystal violet), titanium oxide, carbon black, naphthalene black, and the like. Examples of tackifiers are: orben, Bento, montmorillonite (montmorillonites), and the like. Examples of defoaming agents include: silicone, fluorine, and polymer defoaming agents.

The content of these various additives in the photosensitive resin composition of the present invention is not particularly limited as long as the effects of the present invention are not impaired, and the amount of the additives used in the solid content of the photosensitive resin composition from which the solvent is removed is preferably 30% by mass or less.

In the photosensitive resin composition of the present invention, an inorganic filler such as barium sulfate, barium titanate, silica, amorphous silica, talc, clay, magnesium carbonate, calcium carbonate, alumina, aluminum hydroxide, mica powder, or the like can be further optionally used.

The content of these inorganic fillers in the photosensitive resin composition of the present invention is not particularly limited as long as the effects of the present invention are not impaired, and the amount of the inorganic fillers used in the solid content of the photosensitive resin composition from which the solvent is removed is preferably 60% by mass or less.

The photosensitive resin composition of the present invention can be obtained by mixing and stirring the (a) photocationic polymerization initiator and the (B) epoxy compound, which are essential components, optionally with the addition of an optional component by a usual method. Alternatively, the dispersion and mixing may be optionally carried out by using a disperser such as a dissolver, a homogenizer, a three-roll mill, or the like. After mixing, filtration may be performed using a mesh, a membrane filter, or the like.

The photosensitive resin composition of the present invention is preferably used in a liquid state.

When the photosensitive resin composition of the present invention is used for forming a cured product on a substrate, for example, a substrate having a metal film or a metal oxide film of aluminum, copper, platinum, gold, titanium, chromium, tantalum, or the like, a ceramic substrate of lithium tantalate, glass, silicon oxide, silicon nitride, or the like, a substrate of polyimide, polyethylene terephthalate, or the like is coated to a thickness of 0.1 to 1,000 μm by a spin coater or the like, and heat-treated at 60 to 130 ℃ for about 5 to 60 minutes to remove the solvent, thereby forming a photosensitive resin composition layer. Then, a mask having a predetermined pattern is attached and irradiated with ultraviolet rays, and after a heat treatment is performed at 50 to 130 ℃ for about 1 to 50 minutes, an unexposed portion is developed at room temperature (for example, 15 ℃ or higher) to 50 ℃ for about 1 to 180 minutes using a developing solution to form a pattern, and then a heat treatment is performed at 130 to 200 ℃, whereby a cured product satisfying various characteristics is obtained.

The developing solution can be used as follows: for example, an organic solvent such as γ -butyrolactone, triethylene glycol dimethyl ether, and propylene glycol monomethyl ether acetate, or a mixed solution of the organic solvent and water. In the development, a developing device of a spin immersion (paddle) type, a shower type, or the like may be used, and ultrasonic irradiation may be optionally performed. In addition, aluminum is a more preferred metal substrate when the photosensitive resin composition of the present invention is used.

The conditions for forming a cured product using the photosensitive resin composition of the present invention are not limited to the above conditions, and may be optionally and appropriately adjusted.

The photosensitive resin composition of the present invention can be used as a dry film resist by applying the composition onto a base film by means of a roll coater, die coater, knife coater, bar coater, gravure coater, or the like, drying the composition in a drying oven set to 45 to 100 ℃, removing a predetermined amount of solvent, or further optionally laminating a coating film. At this time, the thickness of the resist on the base film is adjusted to 2 to 200 μm. The base film and the cover film may be used, for example: films of polyester, polypropylene, polyethylene, TAC, polyimide, and the like. These films may be optionally subjected to a release treatment with a silicone release treatment agent or a non-silicone release treatment agent. When the dry film resist is used, for example, the coating film is removed, transferred to a substrate by a roll, a laminator or the like at a temperature of 40 to 100 ℃ and a pressure of 0.05 to 2MPa, and subjected to exposure, post-exposure baking, development and heating treatment as in the case of forming the cured product.

The conditions for forming and using a dry film resist using the photosensitive resin composition of the present invention are not limited to the above conditions, and may be optionally and appropriately adjusted.

If the photosensitive resin composition is supplied as a dry film resist as described above, the steps of coating on a support and drying can be omitted, and a pattern using the photosensitive resin composition of the present invention can be formed more easily.

When used as MEMS package or semiconductor package, the photosensitive composition of the present invention can be usedThe resin composition is used for coating or manufacturing a hollow structure. The substrate for MEMS package and semiconductor package can be made of a metal thin film of aluminum, copper, platinum, gold, titanium, chromium, tantalum, or the like by sputtering, evaporation, or CVD method in an amount of 10 to 10%The film thickness of (2) is formed on silicon wafers (silicon wafers) of various shapes, and the metal is finely processed by photolithography to obtain a substrate. Optionally, a film thickness of 10 to 10 is formed by further using silicon oxide or silicon nitrideAs an inorganic protective film. Subsequently, MEMS or semiconductor devices are fabricated or mounted on the substrate, and in order to isolate the devices from the outside air, the hollow structure must be encapsulated or fabricated. When the photosensitive resin composition of the present invention is used for coating, the coating can be carried out by the method described above. In addition, when the hollow structure is manufactured, the spacer is formed on the substrate by the above-described method, and the dry film is patterned on the barrier rib by the above-described method so as to be stacked and a cap on the spacer, thereby manufacturing the hollow package structure. Further, after the production, a heat treatment at 130 to 200 ℃ for 10 to 120 minutes is optionally carried out, and a MEMS package part and a semiconductor package part satisfying various characteristics are obtained.

The "package" is a sealing method used for maintaining stability of a substrate, a circuit, an element, or the like and blocking permeation of external gas or liquid. The package according to the present invention means, for example, a hollow package for packaging an oscillator such as a SAW element, a surface protection for preventing deterioration of a semiconductor substrate, a printed circuit board, a circuit, or the like, a resin seal, or the like, which is provided in a driving portion of an MEMS.

The photosensitive resin composition of the present invention can be used for manufacturing MEMS (micro electro mechanical system) parts, micro mechanical parts, micro fluid parts, μ -TAS (micro total analysis system) parts, ink jet print head parts, micro reactor parts, insulating layers of electronic parts such as capacitors or inductors, L IGA parts, molds and dies for micro injection molding and thermal embossing, screens and stencils for micro printing, MEMS sensors mounted on mobile terminals or IoT parts, packaging parts such as semiconductor elements and filter elements, bio-MEMS and bio-photonic elements, printed circuit boards, and the like.