阅读说明：本技术 一种非掺b晶体硅太阳电池的制备方法 (Preparation method of non-B-doped crystalline silicon solar cell ) 是由 陈红 冯志强 于 2020-04-24 设计创作，主要内容包括：本发明提供了一种非掺B晶体硅太阳电池的制备方法,属于光伏技术领域。它包括以下步骤：A、制作电池,将硅片清洗、激光掺杂、沉积钝化层、激光开槽、丝网印刷电极后烧结成电池；B、采用抗衰减处理,使步骤A得到的电池的硅片中的杂质和晶界缺陷得到钝化,复合减少。本发明通过对电池片做特殊处理降低其衰减现象,工艺相对简单,适合应用于规模化生产。(The invention provides a preparation method of a non-B-doped crystalline silicon solar cell, belonging to the technical field of photovoltaics. It comprises the following steps: A. manufacturing a battery, namely cleaning a silicon wafer, doping by laser, depositing a passivation layer, grooving by laser, and sintering after screen printing an electrode to form the battery; B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination. The method reduces the attenuation phenomenon of the battery piece by performing special treatment on the battery piece, has relatively simple process, and is suitable for large-scale production.)

1. A preparation method of a non-B-doped crystalline silicon solar cell is characterized by comprising the following steps:

A. manufacturing a battery, namely cleaning a silicon wafer, doping by laser, depositing a passivation layer, grooving by laser, and sintering after screen printing an electrode to form the battery;

B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination.

2. The method as claimed in claim 1, wherein the anti-fading treatment is carried out by placing the cell of step A into a light recovery furnace with the front or back side of the cell facing upward, and heating the front or back side of the cell with a halogen lamp for high temperature annealing.

3. The method as claimed in claim 2, wherein the halogen lamp is heated at 100-500 deg.C with a light intensity >1Sun for 1-10000 s.

4. The method as claimed in claim 1, wherein the anti-fading treatment is to put the cell of step A into an electric annealing furnace and heat the cell at high temperature.

5. The method for preparing a non-doped B crystalline silicon solar cell according to claim 4, wherein the current of the electric annealing furnace is 1-20A, the heating temperature is 50-500 ℃, and the heating time is 1-10000 s.

6. The method as claimed in claim 2, wherein the step of depositing the passivation layer after the silicon wafer is cleaned and the selective emitter is laser doped is a step of polishing the back surface of the silicon wafer with an acid solution and/or an alkali solution, and then depositing a silicon oxide layer of 1-200nm on the front and back surfaces of the silicon wafer.

7. The method as claimed in claim 6, wherein depositing the passivation layer further comprises depositing one or more aluminum oxide films or silicon nitride films on the silicon oxide layer.

8. The method for preparing a non-doped B crystal silicon solar cell as claimed in claim 7, wherein the deposition method is plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition or atomic layer deposition.

9. The method for preparing a non-doped B crystalline silicon solar cell as claimed in claim 7, wherein the thickness of the deposited passivation layer is 1-200 nm.

Technical Field

The invention belongs to the technical field of photovoltaics, and relates to a preparation method of a non-B-doped crystalline silicon solar cell.

Background

The mechanism and solution of light decay (BO-L ID) caused by boron-oxygen complexes was extensively studied prior to 2000. As early as 1997, professor Jan Schmid by ISFH discovered that the use of Ga as a dopant could solve the light decay behavior of Ga-L ID. in 1999, professor T.Saitoh by Tokyo University of Agriculture and Technology, which extensively studied Ga-doped, boron-doped p-type CZ, MCZ and FZ wafers.

There are various prior art references that use of non-B-doped sheet sources, such as Ga-doped sheet sources, is a solution in addition to BO-L ID attenuation using high temperature light or forward current.

More and more battery factories use non-B-doped sheets, such as Ga-doped sheets, for battery production to cope with the degradation problem caused by B-doped sheet sources. But it is not clear whether the Ga-doped sheet source has a new attenuation.

The applicant finds that the efficiency attenuation phenomenon exists in the battery made of a non-B-doped sheet source such as a Ga-doped silicon sheet source under the condition of high-temperature illumination, and the efficiency attenuation phenomenon is particularly obvious on the back surface of a double-sided battery. The rapid attenuation test is carried out by using 1000W illumination and placing the cell at 145 ℃ for 10 minutes, and the cell is illuminated with light with the front side facing upwards, the front efficiency performance of the Ga-doped sheet source has larger fluctuation compared with that of the B-doped sheet source, and the back efficiency performance has larger fluctuation. The back side is irradiated upwards, the front side of the Ga-doped sheet source shows larger efficiency fluctuation compared with the B-doped sheet source, and the back side shows larger efficiency fluctuation.

Disclosure of Invention

The invention aims to solve the problems and provides a preparation method of a non-B-doped crystalline silicon solar cell.

In order to achieve the purpose, the invention adopts the following technical scheme:

a preparation method of a non-B-doped crystalline silicon solar cell is characterized by comprising the following steps:

A. manufacturing a battery, namely cleaning a silicon wafer, doping by laser, depositing a passivation layer, grooving by laser, and sintering after screen printing an electrode to form the battery;

B. and (4) passivating impurities and crystal boundary defects in the silicon wafer of the battery obtained in the step (A) by adopting anti-attenuation treatment, and reducing recombination.

Further, the anti-attenuation treatment is to place the battery in the step A into a light recovery furnace, the front side or the back side of the battery faces upwards, and heat the front side or the back side of the battery by a halogen lamp for high-temperature annealing.

Furthermore, the heating temperature of the halogen lamp is 100-.

Further, the anti-attenuation treatment is to put the battery in the step A into an electric annealing furnace to carry out high-temperature heating.

Furthermore, the current of the electric annealing furnace is 1-20A, the heating temperature is 50-500 ℃, and the heating time is 1-10000 s.

Further, in the step a, after the silicon wafer is cleaned and the selective emitter is doped with laser, the passivation layer is deposited by polishing the surface of the back surface of the silicon wafer with an acid solution and/or an alkali solution, and then depositing a silicon oxide layer with a thickness of 1-200nm on the front surface and the back surface of the silicon wafer.

Further, depositing the passivation layer may further include depositing one or more aluminum oxide films or silicon nitride films on the silicon oxide layer.

Further, the deposition method is plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition or atomic layer deposition.

Further, the thickness of the deposited passivation layer is 1-200 nm.

Compared with the prior art, the invention has the advantages that:

the invention researches the attenuation problem of non-doped B, discovers the attenuation phenomenon of the cell, and provides a preparation method of the crystalline silicon solar cell with the sheet source, wherein the attenuation phenomenon is reduced by specially processing the cell sheet; the method is relatively simple in process and suitable for large-scale production.

Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.

Drawings

FIG. 1 is a box line plot of the Eta-Q L ID attenuation ratio.

Detailed Description

The invention is further described below with reference to the accompanying drawings.