阅读说明：本技术 一种liga技术的埋丝光刻胶片及其制备方法 (L IGA technology buried mercerized silicon wafer and preparation method thereof ) 是由 伊福廷 刘静 张天冲 王波 于 2020-03-06 设计创作，主要内容包括：本发明公开了一种LIGA技术的埋丝光刻胶片及其制备方法,其步骤包括：1)选取两片PMMA光刻胶片和一有机丝；2)将该有机丝放在两片PMMA光刻胶片之间；3)将两所述PMMA光刻胶片相对的两面融合在一起包裹该有机丝,得到埋丝光刻胶片。本发明提供了一种全新的埋丝方法,与传统埋丝方法截然不同,而且埋丝位置易于调控且效率高,埋丝光刻胶片的成品率高。(The invention discloses a buried mercerization etching film of L IGA technology and a preparation method thereof, and the buried mercerization etching film comprises the steps of 1) selecting two PMMA photoetching films and an organic silk, 2) placing the organic silk between the two PMMA photoetching films, and 3) fusing the two opposite surfaces of the two PMMA photoetching films together to wrap the organic silk to obtain the buried mercerization etching film.)

1. A L IGA technology buried mercerized silicon etching film preparation method comprises the following steps:

1) selecting two PMMA photoetching films and an organic silk;

2) placing the organic silk between two PMMA photoetching films;

3) and fusing the two opposite surfaces of the two PMMA photoetching films together to wrap the organic silk, thereby obtaining the buried-silk photoetching film.

2. The method of claim 1, wherein the organic filaments have a diameter of 100 to 800 microns; and determining the thickness of the selected PMMA photoetching film according to the position of the organic silk in the buried-silk photoetching film.

3. The method of claim 2, wherein the PMMA plate has a thickness in the range of 0.2 mm to 2 mm.

4. The method of claim 1, 2 or 3, wherein the organic silk is organic fishing line.

5. The method of claim 1, wherein fusing the two opposing sides of the PMMA prepreg sheet together to encapsulate the organic filament is performed by:

31) horizontally placing the organic silk and the PMMA photoetching film processed in the step 2) in heating equipment;

32) applying tension or weights at two ends of the organic silk to tighten and fix the organic silk at a set position;

33) applying pressure to the PMMA photoetching films to enable two opposite surfaces of the two PMMA photoetching films to be tightly contacted;

34) and starting the heating equipment to heat, so that the two opposite surfaces of the two PMMA photoetching films are fused together to wrap the organic silk.

6. The method of claim 5, wherein the applying pressure to the PMMA photo film is by: placing a glass cover plate on the PMMA photoetching film positioned above, and placing a weight or using a press on the glass cover plate, wherein the pressure is 0.5-10 kg/cm²。

7. The method of claim 5, wherein the heating device is an oven; and heating the oven at the temperature close to the softening point of the PMMA photoetching film within the range of 110-180 ℃ for 8-12 hours.

8. The buried-mercerized photoresist is characterized by comprising two PMMA photoresist films and an organic silk, wherein two opposite surfaces of the two PMMA photoresist films are fused together to wrap the organic silk.

9. The buried-in-wire optical lithography film of claim 8, wherein said organic filament is encapsulated by fusing together opposing sides of said PMMA optical lithography film by placing said organic filament between opposing sides of said PMMA optical lithography film and then applying heat and pressure to said two PMMA optical lithography films.

10. The buried-mercerized silicon wafer of claim 8 or 9, wherein the organic filaments have a diameter of 100-800 microns; and determining the thickness of the selected PMMA photoetching film according to the position of the organic silk in the buried-silk photoetching film.

Technical Field

The invention relates to a photoresist preparation method, in particular to a buried mercerized silicon wafer adopting an L IGA technology and a preparation method thereof.

Background

L IGA technique is invented by German, and comprises three main process links of synchrotron radiation X-ray lithography, electroforming and plastic casting, wherein the synchrotron radiation X-ray lithography obtains a plastic structure of a photoresist, the plastic structure of the photoresist is converted into a required final metal structural element by utilizing the electroforming technique, or the photoresist is electroformed into a metal injection mold, and the plastic casting technique utilizes the metal injection mold obtained by electroforming to manufacture the plastic structural element.

In the structure of an electronic microwave device, an electronic channel is often required to be reserved in a microstructure, so that in the manufacturing process of the microstructure of the electronic microwave device, an organic silk structure is required to be pre-embedded in an exposure substrate to be used as an electronic channel structure of the device, a commonly used silk embedding method is to spread liquid SU8 photoresist on the surface of a silicon wafer, reserve silk in SU8 photoresist, and prepare an SU8 photoresist substrate with embedded silk after the photoresist is pre-baked and solidified, but the SU8 photoresist is commonly used in an ultraviolet exposure technology, and in L IGA technology, no relevant silk embedding technology report is found for PMMA photoresist films.

Disclosure of Invention

Aiming at the problem of how to realize silk embedding in a polymethyl methacrylate (PMMA) photoetching film, the invention aims to provide a silk embedding photoetching film adopting an L IGA technology and a preparation method thereof.

The invention provides a method for preparing a PMMA (polymethyl methacrylate) photoresist film used by L IGA technology by using an organic silk, which is characterized in that the organic silk is embedded in the PMMA photoresist film.

The technical scheme of the invention is as follows:

a L IGA technology buried mercerized silicon etching film preparation method comprises the following steps:

1) selecting two PMMA photoetching films and an organic silk;

2) placing the organic silk between two PMMA photoetching films;

3) and fusing the two opposite surfaces of the two PMMA photoetching films together to wrap the organic silk, thereby obtaining the buried-silk photoetching film.

Further, the diameter of the organic silk is 100-800 microns; and determining the thickness of the selected PMMA photoetching film according to the position of the organic silk in the buried-silk photoetching film.

Further, the thickness range of the PMMA photoetching film is 0.2-2 mm.

Further, the organic silk is organic fishing line.

Furthermore, the method for fusing the two opposite surfaces of the two PMMA photoetching films together to wrap the organic silk comprises the following steps:

31) horizontally placing the organic silk and the PMMA photoetching film processed in the step 2) in heating equipment;

32) applying tension or weights at two ends of the organic silk to tighten and fix the organic silk at a set position;

33) applying pressure to the PMMA photoetching films to enable two opposite surfaces of the two PMMA photoetching films to be tightly contacted;

34) and starting the heating equipment to heat, so that the two opposite surfaces of the two PMMA photoetching films are fused together to wrap the organic silk.

Further, the method for applying pressure to the PMMA photoetching film comprises the following steps: placing a glass cover plate on the PMMA photoetching film positioned above, and placing a weight or using a press on the glass cover plate, wherein the pressure is 0.5-10 kg/cm²。

Further, the heating equipment is an oven; and heating the oven at the temperature close to the softening point of the PMMA photoetching film within the range of 110-180 ℃ for 8-12 hours.

The buried-mercerized photoresist is characterized by comprising two PMMA photoresist films and an organic silk, wherein two opposite surfaces of the two PMMA photoresist films are fused together to wrap the organic silk.

The invention selects two PMMA photoetching films with the same area, clamps the organic silk between the two PMMA photoetching films and straightens the organic silk. And (3) melting the PMMA photo-etching film with the organic silk by hot pressing, so that the two PMMA films are melted together and the organic silk is completely wrapped in the PMMA photo-etching film to form the PMMA photo-etching film with the organic silk embedded in advance.

The thickness range of the PMMA photoresist film can be 0.2-2 mm, and the thicknesses of the two PMMA photoresists can be the same or different according to the requirements of the final filament embedding position.

The organic silk material is organic silk such as fish wire, and the diameter of the organic silk is 100-800 microns. Organic silk is tensioned by a weight, and the pre-tightening force is adjusted by changing the gravity of the weight, wherein the weight is 200-5000 g.

The hot pressing temperature is close to the softening point of the PMMA photoresist, the temperature range is 110-180 ℃, and the softening temperature of the selected PMMA photoresist film is specifically required to be combined. The hot pressing pressure is provided by a weight and a press, and the pressure range is 0.5-10 kg/cm². The hot pressing time is 8-12 hours.

Compared with the prior art, the invention has the following positive effects:

the invention provides a brand-new silk burying method which is completely different from the traditional silk burying method, the silk burying position is easy to regulate and control, the efficiency is high, and the finished product rate of silk engraving films of the silk burying machine is high.

The invention meets the manufacturing requirement of the electronic microwave device microstructure, the organic silk structure provides an electronic channel structure of the device, and the PMMA sheet substrate structure provides a microwave transmission channel structure.

Drawings

FIG. 1 is a flow chart of a preparation method of L IGA technology for buried mercerized photoresist;

fig. 2 is a schematic view of a wire embedding process.

Detailed Description

The present application will be described in further detail with reference to the following drawings and examples, but the present application is not limited thereto.

The invention discloses a preparation method of a silk-buried photoresist suitable for L IGA technology, wherein an organic silk is buried in a PMMA (polymethyl methacrylate) photo-etching film to form a PMMA photo-etching film structure buried with the organic silk, and the method is suitable for preparing a microstructure with a channel structure by X-ray exposure.

The method comprises the following steps: firstly, two PMMA (polymethyl methacrylate) photo-etching films with the same area and an organic silk with the diameter of 100-800 micrometers are selected, the thickness range of the PMMA photo-etching films can be 0.2-2 millimeters, and the thicknesses of the two PMMA photo-etching films can be the same or the thicknesses of the two PMMA photo-etching films can be the same according to the requirements of the final silk embedding positionMay be different. Putting the organic silk between PMMA photoetching films and integrally and horizontally placing the organic silk on a flat plate base plate in an oven. And then, tensioning the organic silk by using a weight, and adjusting the pre-tightening force by changing the gravity of the weight, wherein the weight is 200-5000 g. Then, a glass cover plate is placed on the PMMA photoetching film, a weight is placed on the glass cover plate or a press is used, and the pressure is 0.5-10 kg/cm²And then, heating the oven, wherein the temperature is near the softening point of the PMMA photoetching film, the temperature ranges from 110 ℃ to 180 ℃, the softening temperature of the selected PMMA photoetching film is specifically required to be combined, the hot pressing time is required to ensure that the PMMA photoetching film can be fully deformed and completely wraps the organic silk fishing line after being slowly melted, the two PMMA photoetching films and the organic fishing line are completely adhered together, the hot pressing time ranges from 8 hours to 12 hours, the oven is closed and cooled to room temperature, finally, a lead brick weight and a glass flat plate cover plate are removed, and the PMMA photoetching film with the organic fishing line is taken out, so that the preparation of the silk-buried PMMA photoetching film used in the L IGA technology is completed.

The density of the organic silk selected by the invention is relatively close to that of a PMMA photoresist film, the organic silk has good transmittance to X rays, and the X ray sensitization performance of the surrounding PMMA photoresist material cannot be influenced in the exposure process of the L IGA technology.