阅读说明：本技术 一种应用在320MHz~420MHz的双向功率放大器 (Bidirectional power amplifier applied to 320 MHz-420 MHz ) 是由 相征 张涛 任鹏 于 2020-03-18 设计创作，主要内容包括：本发明公开了一种应用在320MHz～420MHz的双向功率放大器,其特征在于,包括第一射频开关、第二射频开关、低噪声放大器模块、功率放大器模块和收发控制模块,第一射频开关分别连接低噪声放大器模块的输入端、功率放大器模块的输出端和收发控制模块,第二射频开关分别连接低噪声放大器模块的输出端、功率放大器模块的输入端和收发控制模块。本发明的双向功率放大器通过收发控制模块控制接收链路和发射链路的导通,当接收链路导通时,则可以使双向功率放大器对天线接收的信号进行放大,当发射链路导通时,则可以使通信系统的信号处理端的射频信号进行功率放大,达到所需功率的射频信号,因此本发明的双向功率放大器实现了双向功放的设计。(The invention discloses a bidirectional power amplifier applied to 320-420 MHz, which is characterized by comprising a first radio frequency switch, a second radio frequency switch, a low noise amplifier module, a power amplifier module and a transceiving control module, wherein the first radio frequency switch is respectively connected with the input end of the low noise amplifier module, the output end of the power amplifier module and the transceiving control module, and the second radio frequency switch is respectively connected with the output end of the low noise amplifier module, the input end of the power amplifier module and the transceiving control module. The bidirectional power amplifier controls the conduction of the receiving link and the transmitting link through the transceiving control module, when the receiving link is conducted, the bidirectional power amplifier can amplify signals received by the antenna, and when the transmitting link is conducted, the bidirectional power amplifier can amplify the power of radio-frequency signals at a signal processing end of a communication system to achieve the radio-frequency signals with required power, so that the bidirectional power amplifier realizes the design of bidirectional power amplification.)

1. A bidirectional power amplifier applied to 320 MHz-420 MHz is characterized by comprising a first radio frequency switch, a second radio frequency switch, a low noise amplifier module, a power amplifier module and a transceiving control module, wherein the first radio frequency switch is respectively connected with an input end of the low noise amplifier module, an output end of the power amplifier module and the transceiving control module, the second radio frequency switch is respectively connected with an output end of the low noise amplifier module, an input end of the power amplifier module and the transceiving control module, wherein,

the low-noise amplifier module is used for amplifying the signals received from the antenna to obtain finally amplified signals;

the power amplifier module is used for carrying out power amplification on the radio-frequency signal at the signal processing end to obtain a finally amplified radio-frequency signal;

and the transceiving control module is used for conducting a receiving link corresponding to the low-noise amplifier module according to the coupling power so as to enable the finally amplified signal to be received or conducting a transmitting link corresponding to the power amplifier module so as to enable the finally amplified radio-frequency signal to be transmitted.

2. The bi-directional power amplifier of claim 1, wherein the low noise amplifier module comprises an input matching circuit, a low noise amplifier chip, an output matching circuit, a capacitor C6 and a resistor R1, wherein an input terminal of the input matching circuit is connected to the first RF switch, an output terminal of the input matching circuit is connected to an input terminal of the low noise amplifier chip and a first terminal of the capacitor C6, a second terminal of the capacitor C6 is connected to a first terminal of the resistor R1, an output terminal of the low noise amplifier chip and a second terminal of the resistor R1 are connected to an input terminal of the output matching circuit, and an output terminal of the output matching circuit is connected to the second RF switch,

the input matching circuit is used for matching the impedance of the signal received from the antenna with the impedance of the low-noise amplifier chip to obtain a signal after first matching;

the low-noise amplifier chip is used for amplifying the signals after the first matching to obtain amplified signals;

and the output matching circuit is used for matching the amplified signal with the impedance of the communication system to obtain a finally amplified radio frequency signal.

3. The bi-directional power amplifier of claim 2, wherein the input matching circuit comprises a capacitor C1, a capacitor C2, a capacitor C3, an inductor L1, and an inductor L2, wherein,

the first end of the capacitor C1 and the first end of the inductor L1 are connected to the first radio frequency switch, the second end of the capacitor C1 is connected to the ground terminal, the second end of the inductor L1 is connected to the first end of the capacitor C2 and the first end of the inductor L2, the second end of the capacitor C2 is connected to the ground terminal, the second end of the inductor L2 is connected to the first end of the capacitor C3, and the second end of the capacitor C3 is connected to the input end of the low noise amplifier chip and the first end of the capacitor C6.

4. The bi-directional power amplifier of claim 3, wherein the output matching circuit comprises a capacitor C4, a capacitor C5, and an inductor L3, wherein,

the second end of the capacitor C6 is connected to the first end of the resistor R1, the second end of the resistor R1 is connected to the output end of the low noise amplifier chip and the first end of the capacitor C4, the second end of the capacitor C4 is connected to the first end of the inductor L3, the second end of the inductor L3 is connected to the first end of the capacitor C5 and the second rf switch, and the second end of the capacitor C5 is connected to the ground.

5. The bi-directional power amplifier of claim 1, wherein the power amplifier module comprises a push stage amplifier circuit and a post stage amplifier circuit, wherein an input of the push stage amplifier circuit is connected to the second RF switch, an output of the push stage amplifier circuit is connected to an input of the post stage amplifier circuit, and an output of the post stage amplifier circuit is connected to the first RF switch, wherein,

the push-stage amplifier circuit is used for carrying out first power amplification on the radio-frequency signal to obtain a radio-frequency signal after the first power amplification;

and the post-amplifier circuit is used for carrying out secondary power amplification on the radio-frequency signal subjected to the primary power amplification to obtain a finally amplified radio-frequency signal.

6. The bi-directional power amplifier of claim 5, wherein the push stage amplifier circuit comprises a capacitor C7, a capacitor C8, a capacitor C9, a capacitor C10, a capacitor C11, a capacitor C12, a capacitor C13, an inductor L4, an inductor L5, an inductor L6, an inductor L7, an inductor L8, and a push stage amplifier chip, wherein,

a first terminal of the capacitor C7 is connected to the second rf switch, a second terminal of the capacitor C7 is connected to the first terminal of the capacitor C8 and the first terminal of the inductor L, a second terminal of the capacitor C8 is connected to ground, a second terminal of the inductor L is connected to the input terminal of the push-stage amplifier chip, an output terminal of the push-stage amplifier chip is connected to the first terminal of the inductor L, a second terminal of the inductor L is connected to the first terminal of the capacitor C9 and the first terminal of the inductor L, a second terminal of the capacitor C9 is connected to ground, a second terminal of the inductor L6 is connected to the first terminal of the capacitor C10 and the first terminal of the inductor L, a second terminal of the capacitor C10 is connected to ground, a second terminal of the inductor L is connected to the first terminal of the capacitor C11 and the first terminal of the inductor 588, a second terminal of the capacitor C11 is connected to the second terminal of the capacitor C L, a second terminal of the inductor 63598 is connected to the second terminal of the capacitor C599, and a second terminal of the capacitor C599 is electrically connected to the second terminal of the amplifier 13.

7. The bi-directional power amplifier of claim 6, wherein the post-amplifier circuit comprises a capacitor C14, a capacitor C15, a capacitor C16, a capacitor C17, a capacitor C18, a capacitor C19, a capacitor C20, a capacitor C21, a capacitor C22, a capacitor C23, an inductor L9, an inductor L10, an inductor L11, an inductor L12, an inductor L13, an inductor L14, an inductor L15, a resistor R2, and a post-amplifier chip, wherein,

a first end of the capacitor C is connected to a second end of the capacitor C, a second end of the capacitor C is connected to the first end of the inductor 9, a second end of the capacitor C is connected to ground, a second end of the inductor 9 is connected to the first end of the capacitor C and the first end of the inductor 010, a second end of the capacitor C is connected to ground, a second end of the inductor 110 is connected to the first end of the capacitor C and the first end of the inductor 211, a second end of the capacitor C is connected to ground, a second end of the inductor 311 is connected to the first end of the capacitor C and the first end of the inductor 412, a second end of the capacitor C is connected to ground, a second end of the inductor 512 is connected to the first end of the capacitor C and the first end of the resistor R, the second end of the capacitor C and the second end of the resistor R are connected to the input end of the post-stage amplifier chip, the output end of the post-stage amplifier chip is connected to the first end of the inductor 13, the second end of the capacitor C13 is connected to the first end of the capacitor C and the first end of the inductor 14, the second end of the inductor C is connected to the second end of the inductor C23, the second end of the inductor C is connected to the second end of the first end of the inductor C, and the second end of the inductor C23, and the second end of the inductor C are connected to the second end of the inductor C23, and the second end.

8. The bi-directional power amplifier of claim 1, wherein the transceiver control module comprises a coupler module, a power detection chip, a comparator module, and a double-gated inverter chip, wherein,

the coupler module is connected with the power detection chip, the power detection chip is connected with the comparator module, the comparator module is connected with a pin IN1 of the double-gate phase inverter chip, a pin IN2 of the double-gate phase inverter chip is connected with a pin Out1 of the double-gate phase inverter chip, a pin VCT L of the first radio frequency switch and a pin B of the second radio frequency switch, and a pin Out2 of the double-gate phase inverter chip is connected with a pin A of the second radio frequency switch.

9. The bi-directional power amplifier of claim 8, wherein the coupler module includes a coupling chip, a capacitor C24, and a capacitor C25, wherein,

the pin CP L of the coupling chip is connected to the first end of the capacitor C24, the second end of the capacitor C24 is connected to the first end of the capacitor C25, and the second end of the capacitor C25 is connected to the pin INHI of the power detection chip.

10. The bi-directional power amplifier of claim 9, wherein the comparator module comprises a voltage comparison chip, a voltage follower chip, a resistor R3, a resistor R4, and a resistor R5, wherein,

the power detection chip comprises a pin VOUT and a pin VSET, wherein the pin VOUT and the pin VSET are connected with a first end of a resistor R3, a second end of a resistor R3 is connected with a pin IN-of a voltage comparison chip, a pin IN + of the voltage comparison chip is connected with a first end of a resistor R4 and a pin IN-of a voltage following chip, a second end of a resistor R4 is connected with a pin OUT of the voltage following chip, the IN + of the voltage following chip is connected with a first end of a resistor R5, and a second end of a resistor R5 is connected with a power supply end.

Technical Field

The invention belongs to the technical field of wireless communication, and particularly relates to a bidirectional power amplifier applied to 320-420 MHz.

Background

Wireless communication technology is being used more fully in modern life and military and is also being developed at a rapid pace. The size and functionality of wireless communication devices have also evolved from initially bulky and singular to now small and diverse. And the transmission rate between the devices is becoming faster and faster, and the transmission quality is continuously improved.

When a special condition is met, wired communication cannot be applied, and at the moment, wireless communication becomes a few effective communication modes and command ways, such as communication between ships on the shore, communication in earthquake-stricken areas, ground-to-air communication and the like. In any scenario, however, the front end of the wireless communication system cannot be disconnected from the critical part of the amplifier,

the rf amplifier plays a very important role in the wireless communication system, and it is the main work content of the rf amplifier to amplify the power of the rf signal at the transmitting end or amplify the weak signal at the receiving end, and the performance of the rf amplifier will directly affect the performance of the wireless communication system, so providing an rf amplifier suitable for the wireless communication system becomes an urgent problem to be solved.

Disclosure of Invention

In order to solve the problems in the prior art, the invention provides a bidirectional power amplifier applied to 320 MHz-420 MHz. The technical problem to be solved by the invention is realized by the following technical scheme:

a bidirectional power amplifier applied to 320 MHz-420 MHz comprises:

comprises a first radio frequency switch, a second radio frequency switch, a low noise amplifier module, a power amplifier module and a receiving and transmitting control module, wherein the first radio frequency switch is respectively connected with the input end of the low noise amplifier module, the output end of the power amplifier module and the receiving and transmitting control module, the second radio frequency switch is respectively connected with the output end of the low noise amplifier module, the input end of the power amplifier module and the receiving and transmitting control module,

the low-noise amplifier module is used for amplifying the signals received from the antenna to obtain finally amplified signals;

the power amplifier module is used for carrying out power amplification on the radio-frequency signal of the communication system to obtain a finally amplified radio-frequency signal;

and the transceiving control module is used for conducting a receiving link corresponding to the low-noise amplifier module according to the coupling power so as to enable the finally amplified signal to be received or conducting a transmitting link corresponding to the power amplifier module so as to enable the finally amplified radio-frequency signal to be transmitted.

In one embodiment of the present invention, the low noise amplifier module includes an input matching circuit, a low noise amplifier chip, an output matching circuit, a capacitor C6 and a resistor R1, an input terminal of the input matching circuit is connected to the first rf switch, an output terminal of the input matching circuit is connected to the input terminal of the low noise amplifier chip and a first terminal of the capacitor C6, a second terminal of the capacitor C6 is connected to a first terminal of the resistor R1, an output terminal of the low noise amplifier chip and a second terminal of the resistor R1 are connected to the input terminal of the output matching circuit, and an output terminal of the output matching circuit is connected to the second rf switch,

the input matching circuit is used for matching the impedance of the signal received from the antenna with the impedance of the low-noise amplifier chip to obtain a signal after first matching;

the low-noise amplifier chip is used for amplifying the signals after the first matching to obtain amplified signals;

and the output matching circuit is used for matching the amplified signal with the impedance of the communication system to obtain a finally amplified radio frequency signal.

In one embodiment of the present invention, the input matching circuit includes a capacitor C1, a capacitor C2, a capacitor C3, an inductor L1, and an inductor L2, wherein,

the first end of the capacitor C1 and the first end of the inductor L1 are connected to the first radio frequency switch, the second end of the capacitor C1 is connected to the ground terminal, the second end of the inductor L1 is connected to the first end of the capacitor C2 and the first end of the inductor L2, the second end of the capacitor C2 is connected to the ground terminal, the second end of the inductor L2 is connected to the first end of the capacitor C3, and the second end of the capacitor C3 is connected to the input end of the low noise amplifier chip and the first end of the capacitor C6.

In one embodiment of the present invention, the output matching circuit includes a capacitor C4, a capacitor C5, and an inductor L3, wherein,

the second end of the capacitor C6 is connected to the first end of the resistor R1, the second end of the resistor R1 is connected to the output end of the low noise amplifier chip and the first end of the capacitor C4, the second end of the capacitor C4 is connected to the first end of the inductor L3, the second end of the inductor L3 is connected to the first end of the capacitor C5 and the second rf switch, and the second end of the capacitor C5 is connected to the ground.

In one embodiment of the invention, the power amplifier module comprises a push-stage amplifier circuit and a post-stage amplifier circuit, wherein the input terminal of the push-stage amplifier circuit is connected to the second radio frequency switch, the output terminal of the push-stage amplifier circuit is connected to the input terminal of the post-stage amplifier circuit, and the output terminal of the post-stage amplifier circuit is connected to the first radio frequency switch,

the push-stage amplifier circuit is used for carrying out first power amplification on the radio-frequency signal to obtain a radio-frequency signal after the first power amplification;

and the post-amplifier circuit is used for carrying out secondary power amplification on the radio-frequency signal subjected to the primary power amplification to obtain a finally amplified radio-frequency signal.

In one embodiment of the present invention, the push stage amplifier circuit comprises a capacitor C7, a capacitor C8, a capacitor C9, a capacitor C10, a capacitor C11, a capacitor C12, a capacitor C13, an inductor L4, an inductor L5, an inductor L6, an inductor L7, an inductor L8, and a push stage amplifier chip, wherein,

a first terminal of the capacitor C7 is connected to the second rf switch, a second terminal of the capacitor C7 is connected to the first terminal of the capacitor C8 and the first terminal of the inductor L, a second terminal of the capacitor C8 is connected to ground, a second terminal of the inductor L is connected to the input terminal of the push-stage amplifier chip, an output terminal of the push-stage amplifier chip is connected to the first terminal of the inductor L, a second terminal of the inductor L is connected to the first terminal of the capacitor C9 and the first terminal of the inductor L, a second terminal of the capacitor C9 is connected to ground, a second terminal of the inductor L6 is connected to the first terminal of the capacitor C10 and the first terminal of the inductor L, a second terminal of the capacitor C10 is connected to ground, a second terminal of the inductor L is connected to the first terminal of the capacitor C11 and the first terminal of the inductor 588, a second terminal of the capacitor C11 is connected to the second terminal of the capacitor C L, a second terminal of the inductor 63598 is connected to the second terminal of the capacitor C599, and a second terminal of the capacitor C599 is electrically connected to the second terminal of the amplifier 13.

In one embodiment of the present invention, the post-amplifier circuit includes a capacitor C14, a capacitor C15, a capacitor C16, a capacitor C17, a capacitor C18, a capacitor C19, a capacitor C20, a capacitor C21, a capacitor C22, a capacitor C23, an inductor L9, an inductor L10, an inductor L11, an inductor L12, an inductor L13, an inductor L14, an inductor L15, a resistor R2, and a post-amplifier chip, wherein,

a first end of the capacitor C is connected to a second end of the capacitor C, a second end of the capacitor C is connected to the first end of the inductor 9, a second end of the capacitor C is connected to ground, a second end of the inductor 9 is connected to the first end of the capacitor C and the first end of the inductor 010, a second end of the capacitor C is connected to ground, a second end of the inductor 110 is connected to the first end of the capacitor C and the first end of the inductor 211, a second end of the capacitor C is connected to ground, a second end of the inductor 311 is connected to the first end of the capacitor C and the first end of the inductor 412, a second end of the capacitor C is connected to ground, a second end of the inductor 512 is connected to the first end of the capacitor C and the first end of the resistor R, the second end of the capacitor C and the second end of the resistor R are connected to the input end of the post-stage amplifier chip, the output end of the post-stage amplifier chip is connected to the first end of the inductor 13, the second end of the capacitor C13 is connected to the first end of the capacitor C and the first end of the inductor 14, the second end of the inductor C is connected to the second end of the inductor C23, the second end of the inductor C is connected to the second end of the first end of the inductor C, and the second end of the inductor C23, and the second end of the inductor C are connected to the second end of the inductor C23, and the second end.

In one embodiment of the present invention, the transceiving control module comprises a coupler module, a power detection chip, a comparator module, and a double-gate inverter chip, wherein,

the coupler module is connected with the power detection chip, the power detection chip is connected with the comparator module, the comparator module is connected with a pin IN1 of the double-gate phase inverter chip, a pin IN2 of the double-gate phase inverter chip is connected with a pin Out1 of the double-gate phase inverter chip, a pin VCT L of the first radio frequency switch and a pin B of the second radio frequency switch, and a pin Out2 of the double-gate phase inverter chip is connected with a pin A of the second radio frequency switch.

In one embodiment of the invention, the coupler module includes a coupling chip, a capacitor C24, and a capacitor C25, wherein,

the pin CP L of the coupling chip is connected to the first end of the capacitor C24, the second end of the capacitor C24 is connected to the first end of the capacitor C25, and the second end of the capacitor C25 is connected to the pin INHI of the power detection chip.

In one embodiment of the present invention, the comparator module includes a voltage comparing chip, a voltage following chip, a resistor R3, a resistor R4, and a resistor R5, wherein,

the power detection chip comprises a pin VOUT and a pin VSET, wherein the pin VOUT and the pin VSET are connected with a first end of a resistor R3, a second end of a resistor R3 is connected with a pin IN-of a voltage comparison chip, a pin IN + of the voltage comparison chip is connected with a first end of a resistor R4 and a pin IN-of a voltage following chip, a second end of a resistor R4 is connected with a pin OUT of the voltage following chip, the IN + of the voltage following chip is connected with a first end of a resistor R5, and a second end of a resistor R5 is connected with a power supply end.

The invention has the beneficial effects that:

the bidirectional power amplifier controls the conduction of the receiving link and the transmitting link through the transceiving control module, when the receiving link is conducted, the bidirectional power amplifier can amplify signals received by the antenna, and when the transmitting link is conducted, the bidirectional power amplifier can amplify the power of radio-frequency signals at a signal processing end of a communication system to achieve the radio-frequency signals with required power, so that the bidirectional power amplifier realizes the design of bidirectional power amplification.

The present invention will be described in further detail with reference to the accompanying drawings and examples.

Drawings

Fig. 1 is a schematic circuit diagram of a bidirectional power amplifier applied to 320 MHz-420 MHz according to an embodiment of the present invention;

fig. 2 is a schematic circuit diagram of a low noise amplifier module according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of a circuit configuration of a push-stage amplifier circuit according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of a circuit structure of a post-amplifier circuit according to an embodiment of the present invention;

fig. 5 is a schematic circuit diagram of a transceiving control module according to an embodiment of the present invention;

FIG. 6 is a schematic diagram illustrating a simulation of the gain performance of a low noise amplifier module according to an embodiment of the present invention;

fig. 7 is a simulation diagram of the gain performance of a post-amplifier circuit according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.