阅读说明：本技术 一种半导体支撑板材料加工方法 (Semiconductor support plate material processing method ) 是由 陈桂琴 郑建民 于 2019-12-19 设计创作，主要内容包括：本发明公开了一种半导体支撑板材料加工方法,将高抗冲击聚苯乙烯HIPS粉、石粉、辅助剂按照一定比例混合形成改性高抗冲击聚苯乙烯HIPS；将高抗冲击聚苯乙烯HIPS70份,改性高抗冲击聚苯乙烯HIPS20份和通用聚苯乙烯GPPS10份,混合并搅拌均匀备用；通过下料机下料,进行加热挤塑；将挤塑成型的板材进行冷却定型；通过刨床对定型的板体进行加工拉槽；通过石粉的加入,增加了板材的脆性,在对其支撑的半导体或太阳能多晶硅进行切割时,不易粘住切割钢线,减少钢线磨损；将高抗冲击聚苯乙烯HIPS、改性高抗冲击聚苯乙烯HIPS和通用聚苯乙烯GPPS按一定比例混,增加了产品的支撑强度,可以将产品生产成空心或半空心结构,减少其生产成本,且生产该板材的原料可回收利用。(The invention discloses a processing method of a semiconductor support plate material, which comprises the steps of mixing high impact polystyrene HIPS powder, stone powder and an auxiliary agent according to a certain proportion to form modified high impact polystyrene HIPS; 70 parts of high impact polystyrene HIPS, 20 parts of modified high impact polystyrene HIPS and 10 parts of general polystyrene GPPS are mixed and stirred uniformly for later use; blanking through a blanking machine, and heating and extruding; cooling and shaping the extruded sheet; processing a drawing groove on the shaped plate body through a planer; due to the addition of the stone powder, the brittleness of the plate is increased, and a cutting steel wire is not easily stuck when a semiconductor or solar polycrystalline silicon supported by the plate is cut, so that the abrasion of the steel wire is reduced; the high impact polystyrene HIPS, the modified high impact polystyrene HIPS and the general polystyrene GPPS are mixed according to a certain proportion, so that the support strength of the product is increased, the product can be produced into a hollow or semi-hollow structure, the production cost is reduced, and the raw materials for producing the plate can be recycled.)

1. A method for processing a semiconductor supporting plate material is characterized by comprising the following specific steps: 1) preparing modified high impact polystyrene HIPS, and mixing high impact polystyrene HIPS powder, stone powder and an auxiliary agent according to a certain proportion to form the modified high impact polystyrene HIPS; 2) blending materials, namely mixing 70 parts of high impact polystyrene HIPS, 20 parts of modified high impact polystyrene HIPS and 10 parts of general polystyrene GPPS, and uniformly stirring for later use;

blanking through a blanking machine, and heating and extruding;

cooling and shaping the extruded sheet;

and (4) processing the formed plate body by a planer to form a pull groove.

2. The processing method of the semiconductor supporting plate material as claimed in claim 1, wherein the ratio of the high impact polystyrene HIPS powder, the stone powder and the auxiliary agent is 40-60: 20-35: 5-25.

3. The method as claimed in claim 1, wherein in step 3), the heating temperature during extrusion is gradually increased from the inlet to the outlet.

4. The method as claimed in claim 1, wherein the temperature of the heating extrusion molding in step 3) is 190-200 ℃.

5. The method as claimed in claim 1, wherein the processed plate is subjected to water milling when the processed plate is used for cutting solar polysilicon.

6. A method of processing a semiconductor supporting plate material as set forth in claim 1, wherein the plate material for supporting a semiconductor is produced to have a hardness of 90.

7. The processing method for the material of the supporting plate of the semiconductor as claimed in claim 1, wherein the hardness of the produced plate for supporting the solar polysilicon is 75-80.

Technical Field

The invention relates to the field of semiconductor support plate processing, and particularly discloses a semiconductor support plate material processing method.

Background

At present, semiconductor or polycrystalline silicon add man-hour, need the backup pad to support, the backup pad is the consumptive material, and the quantity is big, and traditional backup pad is the plastics material, because its viscidity is great, and cutting tool has the contact of great area with the backup pad during the cutting, easily damages the cutter, just consumes the material.

Disclosure of Invention

In order to solve the technical problem, the invention provides a method for processing a semiconductor supporting plate material.

The technical scheme adopted by the invention is as follows: a method for processing a semiconductor supporting plate material comprises the following specific steps: 1) preparing modified high impact polystyrene HIPS, and mixing high impact polystyrene HIPS powder, stone powder and an auxiliary agent according to a certain proportion to form the modified high impact polystyrene HIPS; 2) blending materials, namely mixing 70 parts of high impact polystyrene HIPS, 20 parts of modified high impact polystyrene HIPS and 10 parts of general polystyrene GPPS, and uniformly stirring for later use;

3) blanking through a blanking machine, and heating and extruding;

4) cooling and shaping the extruded sheet;

5) and (4) processing the formed plate body by a planer to form a pull groove.

Furthermore, the proportion of the high impact polystyrene HIPS powder, the stone powder and the auxiliary agent is 40-60: 20-35: 5-25.

Further, in the step 3), the heating temperature during heating extrusion molding is gradually increased from the feeding port to the discharging port;

further, in the step 3), the temperature for heating and extruding is 190-200 ℃.

Further, when the processed plate is used for cutting the solar polycrystalline silicon, the plate after groove drawing is subjected to water grinding processing.

Further, the sheet for supporting a semiconductor was produced to have a hardness of 90.

Further, the hardness of the produced plate for supporting the solar polycrystalline silicon is 75-80.

The invention has the beneficial effects that: due to the addition of the stone powder, the brittleness of the plate is increased, and a cutting steel wire is not easily stuck when a semiconductor or solar polycrystalline silicon supported by the plate is cut, so that the abrasion of the steel wire is reduced; the high impact polystyrene HIPS, the modified high impact polystyrene HIPS and the general polystyrene GPPS are mixed according to a certain proportion, so that the support strength of the product is increased, the product can be produced into a hollow or semi-hollow structure, the production cost is reduced, and the raw materials for producing the plate can be recycled.

Detailed Description

A method for processing a semiconductor supporting plate material comprises the following specific steps: 1) preparing modified high impact polystyrene HIPS, and mixing high impact polystyrene HIPS powder, stone powder and an auxiliary agent according to the proportion of 40-60: 20-35: 5-25 to form the modified high impact polystyrene HIPS;

2) blending materials, namely mixing 70 parts of high impact polystyrene HIPS, 20 parts of modified high impact polystyrene HIPS and 10 parts of general polystyrene GPPS, and uniformly stirring for later use;

3) blanking through a blanking machine, heating and extruding, wherein the heating temperature is gradually increased from a feeding port to a discharging port; the temperature is 190-200 ℃;

4) cooling and shaping the extruded sheet;

6) processing a drawing groove on the shaped plate body through a planer;

7) when the processed plate is used for cutting the solar polycrystalline silicon, performing water milling processing on the plate after the groove is pulled;

8) the hardness of the produced sheet for supporting semiconductors was 90; the hardness of the produced plate for supporting the solar polycrystalline silicon is 75-80.