阅读说明：本技术 一种小型化、宽线性调频范围的射频振荡器 (Miniaturized radio frequency oscillator with wide linear frequency modulation range ) 是由 李秀萍 李昱冰 谭韬 陈德阳 杨农军 于 2019-12-09 设计创作，主要内容包括：本发明公开了一种小型化、宽线性调频范围的射频振荡器,其属于射频芯片电路设计技术领域。振荡器包括信号放大子模块、延迟调节子模块和双调频控制电压产生模块。通过在第四MOS管和第五MOS管的源极引入电容来提高振荡器振荡频率,同时通过双调频控制电压产生模块生成两个控制电压同时控制电路延迟,使调频成宽带、线性特性。在相同的功耗下,本发明具有比传统环形振荡器高41％的振荡频率,高83％的调频范围,比传统谐振型振荡器的调频范围宽3.4倍,并且在调频范围内保持线性调节特性。本发明具有的小型化的特性,为集成电路生产节约了成本。(The invention discloses a miniaturized radio frequency oscillator with a wide linear frequency modulation range, and belongs to the technical field of radio frequency chip circuit design. The oscillator comprises a signal amplification submodule, a delay adjustment submodule and a double-frequency-modulation control voltage generation module. The oscillation frequency of the oscillator is improved by introducing capacitors into the source electrodes of the fourth MOS tube and the fifth MOS tube, and two control voltages are generated by the double-frequency-modulation control voltage generation module and delay of the circuit is controlled at the same time, so that frequency modulation is broadband and linear characteristics. The invention has 41% higher oscillation frequency, 83% higher frequency modulation range, 3.4 times wider frequency modulation range than traditional resonance oscillator, and maintains linear regulation characteristic in frequency modulation range. The invention has the characteristic of miniaturization, and saves the cost for the production of the integrated circuit.)

1. A miniaturized radio frequency oscillator with a wide linear frequency modulation range is characterized by comprising two oscillator unit modules and a dual-frequency-modulation control voltage generation module, wherein each oscillator unit module comprises a signal amplification sub-module and a delay adjustment sub-module;

the signal amplification submodule is used for providing a sufficiently large voltage gain and basic circuit delay to realize the circuit oscillation starting process;

the delay regulator submodule is used for providing negative resistance and negative capacitance so as to improve the working frequency of the oscillator, and simultaneously providing a control voltage interface so as to realize broadband linear regulation of the frequency by the control voltage;

the double-frequency-modulation control voltage generation module is used for converting the single control voltage into double control voltages, and the double control voltages have the frequency modulation effect with the same polarity on the oscillator.

2. The miniaturized, wide chirp range radio frequency oscillator of claim 1, wherein the signal amplification module comprises a first resistor, a second resistor, a first MOS transistor, a second MOS transistor, and a third MOS transistor.

3. The miniaturized, wide chirp range radio frequency oscillator of claim 2, wherein the delay adjustment submodule comprises a third resistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor, a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor.

4. The miniaturized, wide chirp range radio frequency oscillator of claim 3, wherein the dual chirp control voltage generation module comprises a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, and an operational amplifier.

5. The miniaturized, wide chirp range radio frequency oscillator of claim 4, wherein the oscillator unit module comprises a first oscillator unit module and a second oscillator unit module, the first oscillator unit module and the second oscillator unit module have the same internal structure, a first output port of the first oscillator unit module is connected to a first input port of the second oscillator unit module, a second output port of the first oscillator unit module is connected to a second input port of the second oscillator unit module, a first output port of the second oscillator unit module is connected to a second input port of the first oscillator unit module, and a second output port of the second oscillator unit module is connected to a first input port of the first oscillator unit module;

the first end of the first resistor is connected to a power supply voltage, and the other end of the first resistor is used as a second output port of the oscillator unit module and is connected with the drain electrode of the first MOS tube, the drain electrode of the fourth MOS tube and the first end of the first capacitor;

the first end of the second resistor is connected to a power supply voltage, and the other end of the second resistor is used as a first output port of the oscillator unit module and is connected with the drain electrode of the second MOS transistor, the drain electrode of the fifth MOS transistor and the first end of the second capacitor;

a grid electrode of the first MOS tube is used as a first input port of the oscillator unit module, a grid electrode of the second MOS tube is used as a second input port of the oscillator unit module, and a source electrode of the first MOS tube is connected with a drain electrode of the third MOS tube and a source electrode of the second MOS tube;

the grid electrode of the third MOS tube is connected with the first bias, and the source electrode of the third MOS tube is directly grounded;

the other end of the first capacitor is connected with the first end of the fourth resistor and the grid electrode of the fifth MOS tube, and the other end of the second capacitor is connected with the first end of the third resistor and the grid electrode of the fourth MOS tube;

the other end of the third resistor is connected with the other end of the fourth resistor and a second control voltage;

the source electrode of the fourth MOS tube is connected with the first end of the third capacitor and the drain electrode of the sixth MOS tube, and the source electrode of the fifth MOS tube is connected with the first end of the fourth capacitor and the drain electrode of the seventh MOS tube;

the other end of the third capacitor is connected with the other end of the fourth capacitor and a first control voltage;

the grid electrode of the sixth MOS tube is connected with the grid electrode of the seventh MOS tube and the second bias voltage, the source electrode of the sixth MOS tube is directly grounded, and the source electrode of the seventh MOS tube is directly grounded;

the first end of the fifth resistor is connected with an external reference direct-current voltage, the other end of the fifth resistor is connected with the first end of the sixth resistor and the first input end of the operational amplifier, and the other end of the sixth resistor is directly grounded;

the first end of the seventh resistor is connected with a first control voltage, the other end of the seventh resistor is connected with the first end of the eighth resistor and the second input end of the operational amplifier, and the other end of the eighth resistor is connected with the output end of the operational amplifier and a second control voltage.

6. The miniaturized, wide chirp range radio frequency oscillator of claim 5, wherein the third and fourth capacitors are voltage-controlled variable capacitors.

7. A radio frequency front end integrated circuit comprising a radio frequency oscillator as claimed in any one of claims 1 to 6.

8. A wide chirp method, comprising the method of generating the first control voltage and the second control voltage as claimed in claim 5, wherein the two inputs of the operational amplifier are input with high impedance, and when the two inputs are kept at equal voltage, the fifth resistor, the sixth resistor, the seventh resistor and the eighth resistor are adjusted to adjust the chirp and the chirp range of the RF oscillator.

Technical Field

The invention relates to the technical field of radio frequency oscillation circuit design, in particular to a design method of a miniaturized radio frequency front-end integrated circuit with a wide linear frequency modulation range, which particularly comprises a voltage-controlled oscillator and a current mode logic frequency divider module.

Background

With the development of radio frequency integrated circuit technology and technology, the fields of high-speed communication, radar detection and the like adopt the radio frequency integrated circuit to replace a traditional PCB discrete component radio frequency circuit, an oscillator is used as a core component in a phase-locked loop, high frequency modulation linearity is required to ensure the stability of the phase-locked loop, and the frequency modulation linearity of the traditional single-control voltage ring oscillator is poor.

The frequency modulation continuous wave radar is widely applied to the Doppler radar target detection field and used for ranging a target, the ranging precision of frequency modulation continuous waves is in direct proportion to the bandwidth of a frequency modulation band, as shown in fig. 1, the frequency modulation continuous wave radar is a circuit schematic diagram of a traditional resonance oscillator, the bandwidth of the traditional resonance oscillator is narrow, and meanwhile, the nonlinearity of frequency modulation degrades the performance of the frequency modulation continuous wave radar, so that the frequency modulation continuous waves are difficult to meet the ranging precision of centimeter level.

The arrival of the internet of things era means that a large number of sensors are applied to our lives, the chip cost often determines the competitiveness of products, large-size devices are required to be avoided when the radio frequency oscillator is designed, and the traditional LC on-chip oscillator is difficult to miniaturize due to the existence of large-size inductors, so that the chip production cost is high. As shown in fig. 2a-2b, the circuit schematic diagram of the conventional ring oscillator is shown, and the ring oscillator does not need to use large-sized devices such as inductors during design, thereby effectively reducing the circuit production and manufacturing cost.

Disclosure of Invention

The invention provides a radio frequency oscillator integrated circuit with good frequency modulation linearity, wide frequency modulation range and small size, aiming at solving the technical problems of poor frequency modulation linearity, narrow frequency modulation range and large size of the existing radio frequency oscillator.

The invention provides a miniaturized and wide-linear-frequency-modulation-range radio frequency oscillator, which comprises two oscillator unit modules and a dual-frequency-modulation control voltage generation module, wherein each oscillator unit module comprises a signal amplification sub-module and a delay adjustment sub-module;

the signal amplification submodule is used for providing a sufficiently large voltage gain and basic circuit delay to realize the circuit oscillation starting process;

the delay adjusting sub-module is used for providing negative resistance and negative capacitance so as to improve the working frequency of the oscillator and simultaneously providing a control voltage interface so as to realize broadband linear adjustment of the frequency by the control voltage;

the double-frequency-modulation control voltage generation module is used for converting the single control voltage into double control voltages, and the double control voltages have the frequency modulation effect with the same polarity on the oscillator.

Preferably, the signal amplification module comprises a first resistor, a second resistor, a first MOS transistor, a second MOS transistor and a third MOS transistor.

Preferably, the delay adjustment submodule includes a third resistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor, a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor.

Preferably, the dual frequency modulation control voltage generation module comprises a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor and an operational amplifier.

Preferably, the oscillator unit module includes a first oscillator unit module and a second oscillator unit module, the internal structures of the first oscillator unit module and the second oscillator unit module are the same, a first output port of the first oscillator unit module is connected to a first input port of the second oscillator unit module, a second output port of the first oscillator unit module is connected to a second input port of the second oscillator unit module, a first output port of the second oscillator unit module is connected to a second input port of the first oscillator unit module, and a second output port of the second oscillator unit module is connected to a first input port of the first oscillator unit module;

the first end of the first resistor is connected to a power supply voltage, and the other end of the first resistor is used as a second output port of the oscillator unit module and is connected with the drain electrode of the first MOS tube, the drain electrode of the fourth MOS tube and the first end of the first capacitor;

the first end of the second resistor is connected to a power supply voltage, and the other end of the second resistor is used as a first output port of the oscillator unit module and is connected with the drain electrode of the second MOS tube, the drain electrode of the fifth MOS tube and the first end of the second capacitor;

the grid electrode of the first MOS tube is used as a first input port of the oscillator unit module, the grid electrode of the second MOS tube is used as a second input port of the oscillator unit module, and the source electrode of the first MOS tube is connected with the drain electrode of the third MOS tube and the source electrode of the second MOS tube;

the grid electrode of the third MOS tube is connected with the first bias, and the source electrode of the third MOS tube is directly grounded;

the other end of the first capacitor is connected with the first end of the fourth resistor and the grid electrode of the fifth MOS transistor, and the other end of the second capacitor is connected with the first end of the third resistor and the grid electrode of the fourth MOS transistor;

the other end of the third resistor is connected with the other end of the fourth resistor and a second control voltage;

the source electrode of the fourth MOS tube is connected with the first end of the third capacitor and the drain electrode of the sixth MOS tube, and the source electrode of the fifth MOS tube is connected with the first end of the fourth capacitor and the drain electrode of the seventh MOS tube;

the other end of the third capacitor is connected with the other end of the fourth capacitor and the first control voltage;

the grid electrode of the sixth MOS tube is connected with the grid electrode of the seventh MOS tube and the second bias voltage, the source electrode of the sixth MOS tube is directly grounded, and the source electrode of the seventh MOS tube is directly grounded;

the first end of the fifth resistor is connected with an external reference direct-current voltage, the other end of the fifth resistor is connected with the first end of the sixth resistor and the first input end of the operational amplifier, and the other end of the sixth resistor is directly grounded;

the first end of the seventh resistor is connected with the first control voltage, the other end of the seventh resistor is connected with the first end of the eighth resistor and the second input end of the operational amplifier, and the other end of the eighth resistor is connected with the output end of the operational amplifier and the second control voltage.

Preferably, the third capacitor and the fourth capacitor are voltage-controlled variable capacitors.

The invention provides a radio frequency front end integrated circuit, which comprises any one of the radio frequency oscillators.

The invention also provides a wide linear frequency modulation method, which comprises the first control voltage and the second control voltage generation method, wherein the two input ends of the operational amplifier are input with high impedance, and when the two input ends keep equal voltage, the fifth resistor, the sixth resistor, the seventh resistor and the eighth resistor are adjusted to adjust the frequency modulation linearity and the frequency modulation range of the radio frequency oscillator.

The invention has the beneficial effects that:

the delay adjusting submodule is arranged, the third capacitor and the fourth capacitor are added to the source electrodes of the fourth MOS tube and the fifth MOS tube, and the parasitic capacitor of the output port is eliminated by introducing the negative capacitor, so that the transmission delay of signals is reduced, and the working frequency of the oscillator is greatly improved under the condition of not improving the power consumption.

According to the delay adjustment submodule, the two control voltages are adopted to respectively control the size of the negative capacitor and the size of the negative resistor, the negative resistor is controlled to obtain a wider frequency modulation range, the negative capacitor is controlled to obtain a linear frequency modulation effect, the wide linear frequency modulation range of the voltage-controlled oscillator is obtained by combining the negative capacitor and the voltage-controlled oscillator, the problem of serious nonlinearity under wide frequency modulation is solved, and meanwhile the delay adjustment submodule can be applied to a frequency modulation continuous wave radar to obtain higher distance measurement precision.

The radio frequency oscillator combines the single control voltage and the external reference direct current voltage through the double frequency modulation control voltage generation module under the condition of not additionally improving the power consumption, thereby realizing the generation of the double frequency modulation control voltage.

Drawings

Fig. 1 is a circuit schematic diagram of a conventional resonant type oscillator;

FIG. 2a is a circuit schematic of a conventional ring oscillator;

FIG. 2b is a block schematic diagram of an oscillation cell of a conventional ring oscillator;

FIG. 3 is a diagram of an integrated circuit module connection according to the present invention;

FIG. 4a is a schematic connection diagram of the core delay unit of the present invention;

FIG. 4b is a schematic diagram of the internal circuit of the oscillating unit module according to the present invention;

FIG. 4c is a schematic diagram of a dual frequency control voltage generation module of the present invention;

FIG. 5 is a diagram showing simulation results of variation of oscillation frequency of three oscillator circuits with control voltage;

fig. 6 is a diagram showing simulation results of frequency modulation sensitivity of three oscillator circuits according to control voltage.

Description of the symbols of the drawings:

1. a first signal amplification submodule; 2. a first delay adjustment submodule; 3. a dual frequency modulation control voltage generation module; 4. a second signal amplification submodule; 5. a second delay adjustment submodule; 10. a first oscillator unit module; 20. a second oscillator unit module.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.

The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.