阅读说明：本技术 温度控制装置、温度控制方法和半导体生产设备 (Temperature control device, temperature control method and semiconductor production equipment ) 是由 不公告发明人 于 2018-09-07 设计创作，主要内容包括：本发明涉及半导体生产技术领域,提供一种温度控制装置,用于控制半导体生产设备的温度,该温度控制装置包括温度感测器、控制器以及气体流量调节器。温度感测器用于测量半导体生产设备的实时温度；控制器与温度感测器电连接,控制器用于接收实时温度并将实时温度与预设温度范围进行比较；然后根据比较结果发出控制信号给气体流量调节器；气体流量调节器与控制器电连接,气体流量调节器用于根据控制信号控制通入半导体生产设备的气体流量,以使半导体生产设备的温度保持在预设温度范围内。使用该温度控制装置可以实现对半导体生产设备的温度进行实时控制。(The invention relates to the technical field of semiconductor production, and provides a temperature control device which is used for controlling the temperature of semiconductor production equipment. The temperature sensor is used for measuring the real-time temperature of the semiconductor production equipment; the controller is electrically connected with the temperature sensor and is used for receiving the real-time temperature and comparing the real-time temperature with a preset temperature range; then sending a control signal to the gas flow regulator according to the comparison result; the gas flow regulator is electrically connected with the controller and used for controlling the flow of the gas introduced into the semiconductor production equipment according to the control signal so as to keep the temperature of the semiconductor production equipment within a preset temperature range. The temperature control device can realize real-time control of the temperature of the semiconductor production equipment.)

1. A temperature control apparatus for controlling a temperature of a semiconductor manufacturing apparatus, comprising:

a temperature sensor for measuring a real-time temperature of the semiconductor production equipment;

the controller is electrically connected with the temperature sensor and used for receiving the real-time temperature, comparing the real-time temperature with a preset temperature range and sending a control signal according to a comparison result;

and the gas flow regulator is electrically connected with the controller and used for controlling the flow of the gas introduced into the semiconductor production equipment according to the control signal so as to keep the temperature of the semiconductor production equipment within a preset temperature range.

2. The temperature control apparatus of claim 1, wherein the preset temperature range comprises: a first predetermined temperature range and a second predetermined temperature range.

3. The temperature control apparatus according to claim 2, wherein the first predetermined temperature range is a first set temperature value plus a first error temperature, and the second predetermined temperature range is a second set temperature value plus a second error temperature.

4. The temperature control device according to claim 3, wherein the first set temperature value is 270 ℃ or higher and 400 ℃ or lower.

5. The temperature control apparatus of claim 4, wherein the second set temperature value is 10 ℃ to 50 ℃ greater than the first set temperature value.

6. The temperature control apparatus of claim 1, wherein the gas flow adjustment range is 2050sccm or more and 10050sccm or less, and the voltage range for clamping the wafer is 1050 volts or more and 10050 volts or less.

7. The temperature control apparatus of claim 1, wherein the gas flow adjustment range is greater than or equal to 2000sccm and less than or equal to 10000sccm, and the voltage range for clamping the wafer is greater than or equal to 1000 volts and less than or equal to 10000 volts.

8. A semiconductor manufacturing apparatus, comprising:

the temperature control device according to any one of claims 1 to 7.

9. A temperature control method for controlling a temperature of a semiconductor manufacturing apparatus, comprising:

measuring a real-time temperature of the semiconductor production equipment;

comparing the real-time temperature with a preset temperature range, and sending a control signal according to a comparison result;

and controlling the flow of the gas introduced into the semiconductor production equipment according to the control signal so as to keep the temperature of the semiconductor production equipment within a preset temperature range.

10. The temperature control method according to claim 9, wherein the preset temperature range includes: a first predetermined temperature range and a second predetermined temperature range.

11. The method according to claim 10, wherein the first predetermined temperature range is a first set temperature value plus a first error temperature, and the second predetermined temperature range is a second set temperature value plus a second error temperature.

12. The temperature control method according to claim 11, wherein the first set temperature value is 270 ℃ or higher and 400 ℃ or lower.

13. The temperature control method according to claim 12, wherein the second set temperature value is 10 ℃ to 50 ℃ greater than the first set temperature value.

14. The method of claim 9, wherein the gas flow rate is adjusted within a range of 2050sccm and 10050sccm, and the voltage across the adsorbed wafer is adjusted within a range of 1050 volts and 10050 volts.

15. The method of claim 9, wherein the gas flow rate is adjusted within a range of 2000sccm to 10000sccm, and the voltage across the adsorbed wafer is adjusted within a range of 1000 volts to 10000 volts.

Technical Field

The invention relates to the technical field of semiconductor production, in particular to a temperature control device, a temperature control method and semiconductor production equipment provided with the temperature control device.

Background

In the manufacturing process of semiconductor production, the film forming process needs to control the temperature, the temperature can influence the property of the film, the quality of the produced film can be greatly influenced if the temperature is not controlled in time in the film forming process, but the prior art does not have a method for controlling the temperature in the film forming process in real time; the PID controller is not well applied to the semiconductor manufacturing process in the prior art.

Therefore, it is necessary to develop a new temperature control device, a temperature control method, and a semiconductor manufacturing apparatus mounting the temperature control device.

The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not constitute prior art that is already known to a person of ordinary skill in the art.

Disclosure of Invention

The invention aims to overcome the defect that the temperature of the semiconductor production equipment cannot be controlled in real time in the prior art, and provides a temperature control device and a temperature control method which can control the temperature of the semiconductor production equipment in real time, and the semiconductor production equipment provided with the temperature control device.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

According to an aspect of the present invention, a temperature control apparatus for controlling a temperature of a semiconductor manufacturing apparatus, includes:

a temperature sensor for measuring a real-time temperature of the semiconductor production equipment;

the controller is electrically connected with the temperature sensor and used for receiving the real-time temperature, comparing the real-time temperature with a preset temperature range and sending a control signal according to a comparison result;

and the gas flow regulator is electrically connected with the controller and is used for controlling the gas flow introduced into the semiconductor production equipment according to the control signal so as to keep the temperature of the semiconductor production equipment within a preset temperature range and avoid the defect caused by the protrusion of the aluminum metal.

According to an embodiment of the present invention, the preset temperature range includes: a first predetermined temperature range and a second predetermined temperature range.

According to an embodiment of the present invention, the first preset temperature range is a first set temperature value plus a first error temperature, and the second preset temperature range is a second set temperature value plus a second error temperature.

According to an embodiment of the present invention, the first set temperature value is 270 ℃ or higher and 400 ℃ or lower.

According to one embodiment of the invention, the second set temperature value is 10 ℃ to 50 ℃ greater than the first set temperature value.

According to an embodiment of the present invention, the gas flow adjustment range is equal to or greater than 2050sccm and equal to or less than 10050sccm, and the voltage range for clamping the wafer is equal to or greater than 1050 volts and equal to or less than 10050 volts.

According to an embodiment of the present invention, the gas flow adjusting range is greater than or equal to 2000sccm and less than or equal to 10000sccm, and the voltage range for adsorbing the wafer is greater than or equal to 1000 volts and less than or equal to 10000 volts.

According to a second aspect of the present invention, a semiconductor production apparatus comprises:

the temperature control device according to any one of the above.

According to a third aspect of the present invention, a temperature control method for controlling a temperature of a semiconductor manufacturing apparatus, comprises:

measuring a real-time temperature of the semiconductor production equipment;

comparing the real-time temperature with a preset temperature range, and sending a control signal according to a comparison result;

and controlling the flow of the gas introduced into the semiconductor production equipment according to the control signal so as to keep the temperature of the semiconductor production equipment within a preset temperature range.

According to an embodiment of the present invention, the preset temperature range includes: a first predetermined temperature range and a second predetermined temperature range.

According to an embodiment of the present invention, the first preset temperature range is a first set temperature value plus a first error temperature, and the second preset temperature range is a second set temperature value plus a second error temperature.

According to an embodiment of the present invention, the first set temperature value is greater than or equal to 270 ℃ and less than or equal to 400 ℃.

According to one embodiment of the invention, the second set temperature value is 10 ℃ to 50 ℃ greater than the first set temperature value.

According to an embodiment of the present invention, the gas flow adjustment range is equal to or greater than 2050sccm and equal to or less than 10050sccm, and the voltage range for wafer adsorption is equal to or greater than 1050 volts and equal to or less than 10050 volts.

According to an embodiment of the present invention, the gas flow adjusting range is greater than or equal to 2000sccm and less than or equal to 10000sccm, and the voltage range for adsorbing the wafer is greater than or equal to 1000 volts and less than or equal to 10000 volts.

According to the technical scheme, the invention has at least one of the following advantages and positive effects:

the temperature control device, the temperature control method and the semiconductor production equipment provided with the temperature control device adopt the temperature sensor to measure the real-time temperature of the semiconductor production equipment; receiving the real-time temperature by using a controller, comparing the real-time temperature with a preset temperature range, and sending a control signal according to a comparison result; and controlling the gas flow introduced into the semiconductor production equipment by adopting a gas flow regulator according to the control signal so as to keep the temperature of the semiconductor production equipment within a preset temperature range. The temperature sensor is adopted to measure the real-time temperature, the real-time temperature is compared by the controller, and the gas flow regulator is indicated to control the gas flow introduced into the semiconductor production equipment, so that the temperature of the semiconductor production equipment is kept within a preset temperature range, the effect of effectively controlling the real-time temperature of the semiconductor production equipment is achieved, and the defect of metal protrusion caused by overhigh temperature is avoided.

Drawings

The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.

FIG. 1 is a schematic diagram of a metal bump defect on a semiconductor device;

FIG. 2 is a schematic diagram of a semiconductor device with serious metal bump defects;

FIG. 3 is a simplified top view schematic diagram of a normal state of a semiconductor device;

FIG. 4 is a schematic cross-sectional view of FIG. 3;

FIG. 5 is a simplified schematic diagram of a semiconductor device in the presence of a bump defect;

FIG. 6 is a cross-sectional schematic view of FIG. 5;

FIG. 7 is a schematic view showing a structure of a semiconductor manufacturing apparatus after a valve is installed in a vent hole;

FIG. 8 is a schematic of the temperature of the semiconductor manufacturing apparatus of FIG. 7 over time;

FIG. 9 is a schematic view of the construction of the temperature control apparatus of the present invention;

FIG. 10 is a corresponding schematic diagram of the effect of a first set temperature value on the generation of defect types and wafer dust particle patterns;

FIG. 11 is a schematic of temperature change over time without a second preset temperature setting;

FIG. 12 is a schematic view of an arrangement for providing gas communication to the backside of a wafer;

FIG. 13 is a schematic of temperature change over time after use of the temperature control device of the present invention;

FIG. 14 is a schematic diagram comparing the defects generated in the prior art after the temperature control device of the present invention is used.

The reference numerals of the main elements in the figures are explained as follows:

1. a first electrode; 2. a second electrode; 3. an air gap; 4. a first barrier layer; 5. a second barrier layer; 6. a semiconductor layer; 7. a semiconductor production facility; 8. a valve; 9. a pre-step; 10. the main steps are as follows; 11. metal bump defects; 12. a temperature sensor; 13. a controller; 14. a gas flow regulator; 15. a wafer; 16. a disc; 17. blur defects.

Detailed Description

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.

The metal bump defect 11 is one of the common defects in the semiconductor manufacturing process. Referring to fig. 1 and 2, the metal bump defect 11 has a structure that is schematically shown, and when serious, may result in reliability reduction or even short circuit, as shown in fig. 2. The main reason for the generation of the metal bump defect 11 is caused by the excessive temperature of other subsequent processes.

Referring to fig. 3 and 4, an air gap 3 is formed between the first electrode 1 and the second electrode 2. But metal bump defects 11 occur in case of too high temperature; referring to FIG. 5, a simplified schematic diagram of the occurrence of a protrusion defect and the cross-sectional schematic diagram of FIG. 5 shown in FIG. 6; a first barrier layer 4 and a second barrier layer 5 are respectively arranged at two ends of the first electrode 1 and the second electrode 2; are surrounded by the semiconductor layer 6, and metal protrusion defects 11 are generated on the first electrode 1 and the second electrode 2 at high temperature, which may cause short circuit in severe cases. At present, there is no temperature control apparatus and temperature control method that perform good temperature control of the semiconductor production apparatus 7.

Referring to fig. 7, the structure of the semiconductor manufacturing apparatus after the vent hole is installed with the valve is schematically illustrated, although the valve is adjusted to a certain angle before each step to control the flow rate of the gas introduced in the step to control the temperature. However, the process temperature cannot be precisely controlled, and referring to fig. 8, which is a schematic diagram of the temperature of the semiconductor manufacturing equipment in fig. 7, which varies with time, it can be seen that the temperature of the main step 10 in the three stages is very different, and the above-mentioned problem is not completely solved.

The present invention firstly provides a temperature control device for controlling the temperature of a semiconductor manufacturing apparatus 7, and referring to the schematic structural diagram of the temperature control device of the present invention shown in fig. 9, the temperature control device may include a temperature sensor 12, a controller 13 and a gas flow regulator 14. The temperature sensor 12 may be used to measure the real-time temperature of the semiconductor manufacturing apparatus 7; the controller 13 is electrically connected with the temperature sensor 12, and the controller 13 can be used for receiving the real-time temperature, comparing the real-time temperature with a preset temperature range, and then sending a control signal to the gas flow regulator 14 according to a comparison result; the gas flow regulator 14 is electrically connected to the controller 13, and the gas flow regulator 14 can be used for controlling the flow of the gas to the semiconductor production equipment 7 according to the control signal so as to keep the temperature of the semiconductor production equipment 7 within the preset temperature range.

In the present exemplary embodiment, the temperature sensor 12 may be provided inside the semiconductor production apparatus 7 by optically sensing the temperature, specifically, the infrared temperature sensor 12. Of course, the temperature sensor 12 may also be a temperature sensor made of a thermistor sensor.

The electrical connection may be an electrical signal network connection, or the electrical signals may be connected by wires.

In the present exemplary embodiment, a PID controller in the related art may be used as the controller 13 of the present invention; of course, the controller 13 may also be a microprocessor, a single chip, or the like.

The functional settings of the PID controller, which is composed of a proportional unit (P), an integral unit (I) and a derivative unit (D), are explained in detail here. The relationship between the input e (t) and the output u (t) is:

u(t)＝kp[e(t)+1/TI∫e(t)dt+TD*de(t)/dt]，

where u (t) is the input parameter and e (t) is the output parameter, for example, the input u (t) is set to 100sccm, and the output e (t) is calculated to be 101 sccm.

kp is a proportionality coefficient, and the value range of kp is 0-100; TI is an integral time constant, and the value range of TI is 0-100; TD is a differential time constant, and the value range of TD is 0-100. kp, TI and TD are all self-defined parameters.

The upper and lower limits of the integral are 0 and t, respectively, so its transfer function is:

G(s)＝U(s)/E(s)＝kp[1+1/(TI*s)+TD*s]，

the formula is a transfer function obtained by removing calculus parameters from the formula and then carrying out finishing deformation; wherein G(s) is a transfer function; u(s) is input; e(s) is output, s is seconds.

When the real-time temperature is within the preset temperature range, the controller 13 controls the gas flow regulator 14 to maintain the existing gas flow. When the real-time temperature is higher than the preset temperature range, the controller 13 controls the gas flow regulator 14 to increase the gas flow and take away more heat to reduce the real-time temperature of the semiconductor production equipment 7, for example, the temperature is 310 ℃ and the helium flow is about 70sccm in 10 seconds; the 20 seconds is about 74 sccm. When the real-time temperature is lower than the preset temperature range, the controller 13 controls the gas flow regulator 14 to reduce the gas flow and raise the temperature back to the preset temperature range.

The gas flow regulator 14 may include a valve 8 installed at a vent of the semiconductor production apparatus 7; the gas flow regulator 14 achieves the purpose of controlling the gas flow by changing the opening angle of the valve 8, refer to the structural schematic diagram of the semiconductor production equipment shown in fig. 7 after the valve is installed on the vent hole of the semiconductor production equipment, the valve 8 can be a disc 16 arranged in the vent hole, the disc 16 can rotate, the rotation of the disc 16 is driven by a motor, the motor can be fixed on the semiconductor production equipment 7, when the temperature is higher than the preset temperature, the motor drives the disc 16 to rotate, so that the included angle between the plane of the disc 16 and the axis of the vent hole is reduced, and the vent hole is enlarged; when the temperature is lower than the preset temperature, the motor drives the disc 16 to rotate, so that the included angle between the plane of the disc 16 and the axis of the vent hole is increased, and the vent hole is reduced; the maximum gas flow is when the plane of the disc 16 is parallel to the axis of the vent hole, and the minimum gas flow is when the plane of the disc 16 is perpendicular to the axis of the vent hole; changing the gas flow rate can be done by changing the angle of the valve 8 and the vent. The valve 8 may also be a solenoid valve, and the control end of the solenoid valve is electrically connected to the output end of the controller 13. Helium is mostly used as temperature control gas in the semiconductor production and preparation process, and of course, gas with better heat conductivity and more stable property can also be used.

In the present example embodiment, the preset temperature range may include a first preset temperature range and a second preset temperature range. Referring to fig. 8, which is a schematic diagram illustrating the temperature of the semiconductor manufacturing apparatus in fig. 7 changing with time, the operation process of the semiconductor manufacturing apparatus 7 is divided into a pre-step 9 and a main step 10, and the first preset temperature range is the preset temperature range of the main step 10; the second predetermined temperature range is the predetermined temperature range of the preceding step 9.

In the exemplary embodiment, the first preset temperature range is the first set temperature value plus or minus the first error temperature, and the second preset temperature range is the second set temperature value plus or minus the second error temperature. Referring to the corresponding schematic diagram of fig. 10, the first set temperature value may be 270 ℃ or higher and 400 ℃ or lower, and when the temperature of the semiconductor manufacturing apparatus 7 is in the range of 270 ℃ or higher and 400 ℃ or lower, the defect may be minimized. When the temperature is higher than 400 ℃, the defect of aluminum metal protrusion can occur due to overhigh temperature, so that the quantity of dust particles on the wafer 15 is large, and the requirement required by the process is difficult to meet; when the temperature is lower than 270 ℃, the blur defect 17 occurs, and the number of dust particles on the wafer 15 is also large, so that the process requirement is difficult to achieve.

Referring to fig. 11, which is a schematic diagram of the temperature change with time when the second preset temperature is not set, when the temperature of the main step 10 is within the preset temperature range, that is, the temperature of the main step 10 is within the first preset temperature range, but the temperature of the pre-step 9 is not within the preset temperature range, which may affect the process stability, therefore, the second preset temperature of the pre-step 9 also needs to be further limited, and the second preset temperature value is set to be 10 ℃ to 50 ℃ higher than the first preset temperature value in the actual production process, which may not only meet the production requirements of the product, but also make the temperature of the whole production process more stable.

The first error temperature and the second error temperature may have different settings and have different values when different semiconductor products are produced, the first error temperature and the second error temperature may be the same or different, and generally, the first error temperature and the second error temperature may both be set within 5 ℃, for example, may be an integer such as 2, 3, or a decimal such as 2.5, 3.5.

Referring to fig. 12, a schematic diagram of a structure for ensuring gas circulation on the back of the wafer is shown, in which an upward arrow indicates an upward thrust of helium on the wafer 15; the downward arrow indicates the downward suction force generated by the electro-adsorption on the wafer 15, when the flow rate of the helium gas is larger, the force for sucking the wafer 15 needs to be larger, the wafer 15 cannot be caught by too small force to cause the wafer throwing, but the wafer 15 is broken by too large force; the range of adjustment of the gas flow rate in each step should correspond to the range of voltage to which the wafer 15 is to be attracted, and the increase in the flow rate of the helium gas increases the voltage to which the wafer 15 is to be attracted.

It should be noted that the gas flow adjustment range and the voltage range of the adsorbed wafer 15 are only required to ensure that the wafer 15 is not thrown out, and the wafer 15 is not broken due to the excessive voltage of the adsorbed wafer 15.

In the exemplary embodiment, the gas flow rate adjustment range in the pre-step 9 is equal to or greater than 2050sccm and equal to or less than 10050sccm, and accordingly, the voltage range of the adsorbed wafer 15 may be equal to or greater than 1050 volts and equal to or less than 10050 volts; in the main step 10802, the gas flow rate can be adjusted within a range greater than or equal to 2000sccm and less than or equal to 10000sccm, and correspondingly, the voltage range of the adsorbed wafer 15 is greater than or equal to 1000 volts and less than or equal to 10000 volts.

After the above improvement, referring to fig. 13, which is a schematic diagram of the temperature change with time after the temperature control device of the present invention is used, the temperature required by the production of the product can be satisfied, and the temperature in the whole production process can be relatively stable.

Referring to fig. 14, a schematic diagram of comparison between defects generated in the prior art and defects generated after the temperature control device of the present invention is used is shown, in the diagram, the number of dust particles on the wafer 15 in the prior art is about 800, and lines inside the square frame are the maximum value and the minimum value of the number of dust particles on the wafer, where the upper line and the lower line of the median of the number of dust particles on the wafer are the maximum value and the minimum value of the number of dust particles on the wafer; on the axis of abscissa, the number of dust particles appearing on the wafer 15 in the present invention is about 1. Therefore, the number of dust particles on the wafer 15 is obviously less, and the product yield is obviously improved.

Further, the invention also provides semiconductor production equipment which comprises the temperature control device. The specific structure of the temperature control device has been described in detail above, and therefore, the detailed description thereof is omitted.

Further, the present invention also provides a temperature control method for controlling a temperature of a semiconductor manufacturing apparatus, which may include the steps of:

step S110, measuring a real-time temperature of the semiconductor manufacturing apparatus.

And step S120, comparing the real-time temperature with a preset temperature range, and sending a control signal according to the comparison result.

And step S130, controlling the gas flow introduced into the semiconductor production equipment according to the control signal so as to keep the temperature of the semiconductor production equipment within a preset temperature range.

Next, the temperature control method in the present exemplary embodiment will be further described.

In step S110, the real-time temperature of the semiconductor manufacturing apparatus is measured.

In the present exemplary embodiment, an optical temperature measurer 12, specifically, an infrared temperature sensor 12 may be used to measure the real-time temperature of the semiconductor production apparatus 7.

In step S120, the real-time temperature is compared with a preset temperature range, and a control signal is sent according to the comparison result.

In the present exemplary embodiment, a prior art PID controller may be used as the controller 13 of the present invention in performing the comparison and issuing the control signal.

The functional settings of the PID controller, which is composed of a proportional unit (P), an integral unit (I) and a derivative unit (D), are explained in detail here. The relationship between the input e (t) and the output u (t) is:

u(t)＝kp[e(t)+1/TI∫e(t)dt+TD*de(t)/dt]，

where u (t) is the input parameter and e (t) is the output parameter, for example, the input u (t) is set to 100sccm, and the output e (t) is calculated to be 101 sccm.

kp is a proportionality coefficient, and the value range of kp is 0-100; TI is an integral time constant, and the value range of TI is 0-100; TD is a differential time constant, and the value range of TD is 0-100. kp, TI and TD are all self-defined parameters.

The upper and lower limits of the integral are 0 and t, respectively, so its transfer function is:

G(s)＝U(s)/E(s)＝kp[1+1/(TI*s)+TD*s]，

the formula is a transfer function obtained by removing calculus parameters from the formula and then carrying out finishing deformation; wherein G(s) is a transfer function; u(s) is input; e(s) is output, s is seconds.

In step S130, the gas flow rate introduced into the semiconductor manufacturing apparatus is controlled according to the control signal, so that the temperature of the semiconductor manufacturing apparatus is kept within the preset temperature range.

In the present exemplary embodiment, the gas flow regulator 14 may include a valve 8 installed at a vent of the semiconductor production apparatus 7; the gas flow regulator 14 controls the gas flow by changing the opening of the valve 8, and when the temperature exceeds a preset temperature range, He is replenished to cool the gas flow, for example, the temperature is 310 ℃ and the helium flow is about 70sccm in 10 seconds; the 20 seconds is about 74 sccm. When the temperature is lower than the preset range value of the temperature, the flow rate of the helium gas is reduced. Referring to fig. 7, a schematic structural diagram of the semiconductor manufacturing equipment after installing the valve in the vent hole, the valve 8 may be a circular disc 16 disposed in the cylindrical vent hole, the circular disc 16 may rotate, the rotation of the circular disc 16 is driven by a motor, when the temperature is higher than a preset temperature, the motor drives the circular disc 16 to rotate, so that an included angle between a plane of the circular disc 16 and an axis of the vent hole becomes smaller, and the vent hole becomes larger; when the temperature is lower than the preset temperature, the motor drives the disc 16 to rotate, so that the included angle between the plane of the disc 16 and the axis of the vent hole is increased, and the vent hole is reduced; the maximum gas flow is when the plane of the disc 16 is parallel to the axis of the vent hole, and the minimum gas flow is when the plane of the disc 16 is perpendicular to the axis of the vent hole; changing the gas flow rate can be done by changing the angle of the valve 8 and the vent. The valve 8 may also be a solenoid valve, and the control end of the solenoid valve is electrically connected to the output end of the controller 13.

Helium is mostly used as temperature control gas in the semiconductor production and preparation process, and of course, gas with better heat conductivity and more stable property can also be used.

In the present example embodiment, the preset temperature range may include a first preset temperature range and a second preset temperature range. Referring to fig. 8, which is a schematic diagram illustrating the temperature of the semiconductor manufacturing apparatus in fig. 7 changing with time, the operation process of the semiconductor manufacturing apparatus 7 is divided into a pre-step 9 and a main step 10, and the first preset temperature range is the preset temperature range of the main step 10; the second predetermined temperature range is the predetermined temperature range of the preceding step 9.

In the exemplary embodiment, the first preset temperature range is the first set temperature value plus or minus the first error temperature, and the second preset temperature range is the second set temperature value plus or minus the second error temperature. Referring to the corresponding schematic diagram of fig. 10, the first set temperature value may be 270 ℃ or higher and 400 ℃ or lower, and when the first set temperature value of the semiconductor manufacturing apparatus 7 is in the range of 270 ℃ or higher and 400 ℃ or lower, the defect may be minimized. When the temperature is higher than 400 ℃, the defect of aluminum metal protrusion can occur due to overhigh temperature, so that the quantity of dust particles on the wafer 15 is large, and the requirement required by the process is difficult to meet; when the temperature is lower than 270 ℃, the blur defect 17 occurs, and the number of dust particles on the wafer 15 is also large, so that the process requirement is difficult to achieve.

Referring to fig. 11, which is a schematic diagram illustrating a temperature change with time when the second preset temperature is not set, when the temperature of the main step 10 is within a preset temperature range, that is, the temperature of the main step 10 is within the first preset temperature range, but the temperature of the pre-step 9 is not within the preset temperature range, which may affect the process stability, therefore, the second preset temperature of the pre-step 9 also needs to be further limited, and setting the second preset temperature to be 10 ℃ to 50 ℃ higher than the first preset temperature in the actual production process may not only meet the production requirement of the product, but also make the temperature of the whole production process more stable.

The first error temperature and the second error temperature may have different settings and have different values when different semiconductor products are produced, the first error temperature and the second error temperature may be the same or different, and generally, the first error temperature and the second error temperature may both be set within 5 ℃, for example, may be an integer such as 2, 3, or a decimal such as 2.5, 3.5.

Referring to fig. 12, a schematic diagram of a structure for ensuring gas circulation on the back of the wafer is shown, in which an upward arrow indicates an upward thrust of helium on the wafer 15; the downward arrow indicates the downward suction force generated by the electro-adsorption on the wafer 15, when the flow rate of the helium gas is larger, the force for sucking the wafer 15 needs to be larger, the wafer 15 cannot be caught by too small force to cause the wafer throwing, but the wafer 15 is broken by too large force; the range of adjustment of the gas flow rate in each step should correspond to the range of voltage to which the wafer 15 is to be attracted, and the increase in the flow rate of the helium gas increases the voltage to which the wafer 15 is to be attracted.

It should be noted that the gas flow adjustment range and the voltage range of the adsorbed wafer 15 are only required to ensure that the wafer 15 is not thrown out, and the wafer 15 is not broken due to the excessive voltage of the adsorbed wafer 15.

In the exemplary embodiment, the gas flow rate adjustment range in the pre-step 9 is equal to or greater than 2050sccm and equal to or less than 10050sccm, and accordingly, the voltage range of the adsorbed wafer 15 may be equal to or greater than 1050 volts and equal to or less than 10050 volts; in the main step 10802, the gas flow rate can be adjusted within a range greater than or equal to 2000sccm and less than or equal to 10000sccm, and correspondingly, the voltage range of the adsorbed wafer 15 is greater than or equal to 1000 volts and less than or equal to 10000 volts.

In the present exemplary embodiment, referring to a schematic diagram of a structure for ensuring gas flow on the back of the wafer shown in fig. 12, when the flow rate of the helium gas is larger, the force for adsorbing the wafer 15 is larger, too small force may not catch the wafer 15 and cause the wafer 15 to be flaked, and too large force may cause the wafer 15 to be broken; the adjustment range of the gas flow rate in each step should correspond to the voltage range of the suction wafer 15.

In the pre-step 9, the gas flow rate is adjusted within a range of 2050sccm or more and 10050sccm or less, and the voltage for adsorbing the wafer 15 may be 1050 volts or more and 10050 volts or less; in the main step 10, the gas flow rate can be adjusted within a range of 2000sccm or more and 10000sccm or less, and the voltage of the adsorbed wafer 15 can be adjusted within a range of 1000 volts or more and 10000 volts or less.

It should be noted that the gas flow adjustment range and the voltage range of the adsorbed wafer 15 only need to ensure that the wafer 15 is not thrown away, and the wafer 15 is not broken due to the excessive voltage of the adsorbed wafer 15, and only one of many embodiments is proposed herein.

After the above improvement, referring to fig. 13, which is a schematic diagram of the temperature change with time after the temperature control device of the present invention is used, the temperature required by the production of the product can be satisfied, and the temperature in the whole production process can be relatively stable.

Referring to fig. 14, a schematic diagram of comparison between defects generated in the prior art and a temperature control device of the present invention is shown, in which a block diagram shows the number of dust particles on the wafer 15 in the prior art, about 800, and lines inside a square frame indicate that the number of dust particles on the wafer 15 is a median and upper and lower lines indicate the maximum value and the minimum value of dust particles on the wafer; on the axis of abscissa, the number of dust particles appearing on the wafer 15 in the present invention is about 1. Therefore, the number of dust particles on the wafer 15 is obviously less, and the product yield is obviously improved.

The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments, and the features discussed in connection with the embodiments are interchangeable, if possible. In the above description, numerous specific details are provided to give a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of the invention.

The terms "about" and "approximately" as used herein generally mean within 20%, preferably within 10%, and more preferably within 5% of a given value or range. The amounts given herein are approximate, meaning that the meaning of "about", "approximately" or "approximately" may still be implied without specific recitation.

Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". Other relative terms, such as "high", "low", "top", "bottom", "front", "back", "left", "right", etc., are also intended to have similar meanings. When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.

In this specification, the terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising," "including," and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first," "second," and "third," etc. are used merely as labels, and are not limiting on the number of their objects.

It is to be understood that the invention is not limited in its application to the details of construction and the arrangement of components set forth in the description. The invention is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications fall within the scope of the present invention. It will be understood that the invention disclosed and defined in this specification extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute alternative aspects of the present invention. The embodiments described in this specification illustrate the best mode known for carrying out the invention and will enable those skilled in the art to utilize the invention.