阅读说明：本技术 一种基于半导体技术的温控电路 (Temperature control circuit based on semiconductor technology ) 是由 王朝刚 鲁雪松 于 2018-09-11 设计创作，主要内容包括：本发明公开了一种基于半导体技术的温控电路,包括电容C1、单向可控硅VS1、双向可控硅VS2、加热片RL、二极管D1和三极管VT1,所述电容C1一端分别连接电阻R7、加热片RL和220V交流电一端,电容C1另一端分别连接二极管D1正极和电阻R7另一端,加热片RL另一端连接双向可控硅VS2的T1极,二极管D1负极分别连接二极管VD负极、继电器J线圈、电阻R8、蜂鸣器B和电阻R1。本发明基于半导体技术的温控电路采用三极管等分立元件控制,有效实现了温度控制,使采用本发明电路的装置温度保持在一定的范围内,控制精度较高,而且带有声光警示功能,电路结构简单,成本低,适用于热水器、饮水机等装置。(The invention discloses a temperature control circuit based on a semiconductor technology, which comprises a capacitor C1, a unidirectional silicon controlled rectifier VS1, a bidirectional silicon controlled rectifier VS2, a heating sheet RL, a diode D1 and a triode VT1, wherein one end of the capacitor C1 is respectively connected with one ends of a resistor R7, the heating sheet RL and 220V alternating current, the other end of the capacitor C1 is respectively connected with the anode of a diode D1 and the other end of a resistor R7, the other end of the heating sheet RL is connected with a T1 pole of the bidirectional silicon controlled rectifier VS2, and the cathode of the diode D1 is respectively connected with the cathode of a diode VD, a relay J coil, a resistor R8, a buzzer B and a resistor. The temperature control circuit based on the semiconductor technology is controlled by discrete elements such as triodes and the like, so that the temperature control is effectively realized, the temperature of a device adopting the temperature control circuit is kept in a certain range, the control precision is higher, the temperature control circuit has an acousto-optic warning function, the circuit structure is simple, the cost is low, and the temperature control circuit is suitable for devices such as a water heater, a water dispenser and the like.)

1. A temperature control circuit based on semiconductor technology comprises a capacitor C1, a unidirectional silicon controlled rectifier VS1, a bidirectional silicon controlled rectifier VS2, a heating sheet RL, a diode D1 and a triode VT1, wherein one end of the capacitor C1 is connected with one end of a resistor R7, one end of the heating sheet RL and one end of 220V alternating current respectively, the other end of the capacitor C1 is connected with the anode of a diode D1 and the other end of a resistor R7 respectively, the other end of the heating sheet RL is connected with the T1 pole of the bidirectional silicon controlled rectifier VS2, the cathode of the diode D1 is connected with the cathode of a diode VD, a relay J coil, a resistor R8, a buzzer B and the resistor R1 respectively, the temperature control circuit is characterized in that the other end of the resistor R1 is connected with a resistor R2 and a resistor R3 respectively, the other end of the resistor R2 is connected with a resistor R53, a relay K contact K-1 and a resistor R6 respectively, the other end of the resistor R86, The LED driving circuit comprises a T2 pole of a bidirectional thyristor VS2, a diode VD positive pole, a K pole of a unidirectional thyristor VS, an emitter of a triode VT2, a capacitor C2, one end of a potentiometer RP1 and a capacitor C3, the other end of the capacitor C3 is connected with the other end of a resistor R4 and a G pole of the unidirectional thyristor VS1 respectively, an A pole of the unidirectional thyristor VS1 is connected with a cathode of a light-emitting diode LED, and the positive pole of the light-emitting diode LED is connected with the other end of a coil of a relay J.

2. The semiconductor-technology-based temperature control circuit according to claim 1, wherein the collector of the transistor VT2 is connected to the other end of the resistor R8 and the G pole of the triac VS 2.

3. The temperature control circuit based on semiconductor technology as claimed in claim 1 or 2, wherein the base of the triode VT2 is connected with a resistor R5, the other end of the resistor R5 is respectively connected with the other end of a capacitor C2 and the cathode of a diode D2, the anode of the diode D2 is respectively connected with the other ends of a relay K contact K-1, a relay K contact K-2, a potentiometer RP1 sliding sheet and a potentiometer RP1, and the other end of the relay K contact K-1 is connected with the other end of the resistor R3.

4. The semiconductor-technology-based temperature control circuit according to claim 1, wherein the diode VD is a zener diode.

5. The semiconductor technology based temperature control circuit according to claim 3, wherein the relay K contact K-1 is a normally closed contact.

6. The semiconductor technology based temperature control circuit according to claim 3, wherein the relay K contact K-2 is a normally open contact.

7. Temperature control circuit based on semiconductor technology according to claim 1, characterized in that the resistor R2 and the resistor R3 are both PTC resistors.

Technical Field

The invention relates to a control circuit, in particular to a temperature control circuit based on a semiconductor technology.

Background

The temperature controller is a series of automatic control elements which are physically deformed in a switch according to the temperature change of a working environment so as to generate certain special effects and generate on or off actions, and is also called a temperature control switch, a temperature protector and a temperature controller, and is called as the temperature controller for short. Or the temperature protector transmits the temperature to the temperature controller, and the temperature controller sends out a switching command, so that the operation of the equipment is controlled to achieve the ideal temperature and energy-saving effect.

With the development of science and technology, temperature control circuits have been used in many fields in people's daily life, however, although the temperature control circuits can be very simple, most of simple temperature control circuits cannot achieve relatively precise control, can only achieve temperature control simply, and have limited functions; therefore, most of the existing temperature control circuits are controlled by programmable logic devices such as a single chip microcomputer and the like, the cost is high, the circuit structure is complex, and the cost is greatly improved.

Disclosure of Invention

The present invention is directed to a low-cost temperature control circuit based on semiconductor technology, so as to solve the problems mentioned in the background art.

In order to achieve the purpose, the invention provides the following technical scheme:

a temperature control circuit based on a semiconductor technology comprises a capacitor C1, a unidirectional silicon controlled rectifier VS1, a bidirectional silicon controlled rectifier VS2, a heating sheet RL, a diode D1 and a triode VT1, wherein one end of the capacitor C1 is connected with one end of a resistor R7, one end of the heating sheet RL and one end of 220V alternating current respectively, the other end of the capacitor C1 is connected with the anode of a diode D1 and the other end of a resistor R7 respectively, the other end of the heating sheet RL is connected with the T1 pole of the bidirectional silicon controlled rectifier VS2, the cathode of the diode D1 is connected with the cathode of a diode VD, a relay J coil, a resistor R8, a buzzer B and a resistor R1 respectively, the other end of the resistor R1 is connected with a resistor R2 and a resistor R2 respectively, the other end of the resistor R2 is connected with a resistor R4, a relay K contact K-1 and a resistor R6 respectively, the other end of the resistor R87428 is connected, A T2 pole of a bidirectional thyristor VS2, a diode VD positive pole, a K pole of a unidirectional thyristor VS, an emitter of a triode VT2, a capacitor C2, one end of a potentiometer RP1 and a capacitor C3, the other end of the capacitor C3 is respectively connected with the other end of a resistor R4 and a G pole of the unidirectional thyristor VS1, an A pole of the unidirectional thyristor VS1 is connected with a light-emitting diode LED negative pole, the positive pole of the light-emitting diode LED is connected with the other end of a relay J coil, the collector of the triode VT2 is respectively connected with the other end of the resistor R8 and the G pole of the bidirectional triode VS2, the base of the triode VT2 is connected with the resistor R5, the other end of the resistor R5 is respectively connected with the other end of the capacitor C2 and the negative pole of the diode D2, the positive pole of the diode D2 is respectively connected with the other end of the relay K contact K-1, the relay K contact K-2, the sliding sheet of the potentiometer RP1 and the other end of the potentiometer RP1, and the other end of the relay K contact K-2 is connected with the other end of.

As a further scheme of the invention: and the diode VD is a voltage stabilizing diode.

As a further scheme of the invention: the relay K contact K-1 is a normally closed contact.

As a further scheme of the invention: and the relay K contact K-2 is a normally open contact.

As a still further scheme of the invention: the resistor R2 and the resistor R3 are both PTC resistors.

Compared with the prior art, the invention has the beneficial effects that: the temperature control circuit based on the semiconductor technology is controlled by discrete elements such as triodes and the like, so that the temperature control is effectively realized, the temperature of a device adopting the temperature control circuit is kept in a certain range, the control precision is higher, the temperature control circuit has an acousto-optic warning function, the circuit structure is simple, the cost is low, and the temperature control circuit is suitable for devices such as a water heater, a water dispenser and the like.

Drawings

Fig. 1 is a circuit diagram of a temperature control circuit based on semiconductor technology.

Fig. 2 is a circuit diagram of a second embodiment of a temperature control circuit based on semiconductor technology.

Fig. 3 is a pin diagram of a unidirectional thyristor in a temperature control circuit based on semiconductor technology.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.