阅读说明：本技术 半导体装置的制造方法 (Method for manufacturing semiconductor device ) 是由 根津裕介 渡边康贵 杉野贵志 于 2017-08-04 设计创作，主要内容包括：本发明提供一种半导体装置的制造方法,其包括：电子零件载置工序,其中,在粘着片(1)上载置电子零件(2)；第一层叠工序,其中,层叠具备固化性的第一树脂组合物层(3)的第一密封片；剥离工序,其中,将粘着片(1)剥离；第二层叠工序,其中,层叠具备固化性的第二树脂组合物层(4)的第二密封片；固化工序,其中,得到具备第一树脂组合物层(3)固化而成的第一固化层(3’)、第二树脂组合物层(4)固化而成的第二固化层(4’)、及通过第一固化层(3’)及第二固化层(4’)而密封的电子零件(2)的密封体(5)；孔形成工序,其中,形成孔(6)；去胶渣工序,其中,对密封体(5)进行去胶渣处理；及电极形成工序,其中,形成电极(7)。该半导体装置的制造方法使半导体装置的高集成化及高功能化成为可能,同时也可适用于高效率且高成品率的方法。(The invention provides a method for manufacturing a semiconductor device, which comprises the following steps: an electronic component mounting step in which an electronic component (2) is mounted on the adhesive sheet (1); a first stacking step of stacking a first sealing sheet having a curable first resin composition layer (3); a peeling step in which the adhesive sheet (1) is peeled; a second lamination step in which a second sealing sheet provided with a curable second resin composition layer (4) is laminated; a curing step for obtaining a sealing body (5) that includes a first cured layer (3 ') obtained by curing the first resin composition layer (3), a second cured layer (4') obtained by curing the second resin composition layer (4), and the electronic component (2) sealed by the first cured layer (3 ') and the second cured layer (4'); a hole forming step in which a hole (6) is formed; a desmear process, wherein the sealing body (5) is desmear treated; and an electrode forming step in which an electrode (7) is formed. The method for manufacturing a semiconductor device enables high integration and high functionality of the semiconductor device, and is also applicable to a method with high efficiency and high yield.)

1. A method for manufacturing a semiconductor device, comprising:

an electronic component mounting step of mounting 1 or 2 or more electronic components on the adhesive surface of the adhesive sheet;

a first laminating step of laminating the first resin composition layer in a first sealing sheet having at least a curable first resin composition layer so as to cover at least the electronic component;

a peeling step of peeling the adhesive sheet from the electronic component and the first resin composition layer;

a second lamination step of laminating a second sealing sheet having at least a curable second resin composition layer so as to cover an exposed surface of the electronic component exposed by peeling of the adhesive sheet;

a curing step of obtaining a sealing body including a first cured layer obtained by curing the first resin composition layer, a second cured layer obtained by curing the second resin composition layer, and the electronic component sealed by the first cured layer and the second cured layer;

a hole forming step of forming a hole that exposes a part of a surface of the electronic component and penetrates at least one of the first cured layer and the second cured layer;

a desmear step in which desmear treatment is performed on the sealing body in which the hole is formed; and

and an electrode forming step of forming an electrode electrically connected to the electronic component through the hole.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the curing of the first resin composition layer is performed at a stage between the first laminating step and the peeling step.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein at least one of the first cured layer and the second cured layer exhibits an insulating property.

4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein curing of at least one of the first resin composition layer and the second resin composition layer is performed by heat treatment.

5. The method for manufacturing a semiconductor device according to claim 4, wherein the heat treatment is performed in stages by a plurality of heat treatments.

6. The method for manufacturing a semiconductor device according to claim 5, wherein the heat treatment is performed by a first heat treatment in which heat curing is performed at a temperature T1, and a second heat treatment in which heat curing is performed at a temperature T2 higher than a temperature T1.

7. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the first cured layer is cured so that a reaction rate of the first cured layer becomes 85% or more.

8. The method for manufacturing a semiconductor device according to any one of claims 1 to 7, wherein the second resin composition layer is cured so that a reaction rate of the second cured layer becomes 85% or more.

9. The method for manufacturing a semiconductor device according to any one of claims 1 to 8, wherein at least one of the first resin composition layer and the second resin composition layer is formed of a resin composition containing a thermosetting resin.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the resin composition contains an inorganic filler.

11. The method for manufacturing a semiconductor device according to claim 10, wherein a minimum coverage area of less than 550m is used²The inorganic filler is surface-treated with/g of a surface treating agent.

12. The method for manufacturing a semiconductor device according to any one of claims 9 to 11, wherein the first resin composition layer and the second resin composition layer are formed of the resin compositions having the same composition.

13. The method for manufacturing a semiconductor device according to any one of claims 1 to 12, wherein the thickness of the second resin composition layer is 1 μm or more and 100 μm or less.

14. The method for manufacturing a semiconductor device according to any one of claims 1 to 13, wherein a thickness of the first resin composition layer is 50 μm or more and 1000 μm or less.

Technical Field

The present invention relates to a method for manufacturing a semiconductor device including a sealed electronic component.

Background

Conventionally, in a method of manufacturing a semiconductor device, an electronic component such as a semiconductor chip is sealed with a sealing sheet having a sealing material formed in a sheet shape, and a semiconductor package is manufactured.

For example, patent document 1 discloses a method in which a semiconductor chip is mounted on a semiconductor wafer as a support, and then the semiconductor chip is sealed with a sealing sheet. Further, patent document 2 discloses a method of mounting a semiconductor chip on a printed circuit board and then sealing the semiconductor chip with a sheet-like resin composition. The semiconductor wafer or the wired circuit board is provided with a wiring in advance, and when the semiconductor chip is mounted, the semiconductor wafer or the wired circuit board is mounted such that the extraction electrode existing in the semiconductor chip is electrically connected to the wiring.

Disclosure of Invention

Technical problem to be solved by the invention

In recent years, high integration and high functionality of semiconductor devices have been demanded, and for example, development of a substrate (chip-embedded substrate) having a semiconductor chip embedded therein has been advanced. However, the semiconductor packages obtained by the methods disclosed in patent documents 1 and 2 cannot sufficiently meet the demands for higher integration and higher functionality of semiconductor devices.

In recent years, development of fan-out wafer level packages (FOWLP), fan-out panel level packages (FOPLP), and the like has been advanced. In such a package manufacturing method, a plurality of semiconductor packages can be obtained by sealing a plurality of semiconductor chips at a time with a sealing sheet and then dividing the semiconductor chips at predetermined positions. Thus, the semiconductor package can be produced with high efficiency and high yield. Therefore, development of a sealing sheet suitable for use in the method for manufacturing such a package has been demanded.

The present invention has been made in view of such circumstances, and provides a method for manufacturing a semiconductor device which enables high integration and high functionality of the semiconductor device and which is also applicable to a method with high efficiency and high yield.

Means for solving the problems

In order to achieve the above object, according to a first aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: an electronic component mounting step of mounting 1 or 2 or more electronic components on the adhesive surface of the adhesive sheet; a first laminating step of laminating the first resin composition layer in a first sealing sheet having at least a curable first resin composition layer so as to cover at least the electronic component; a peeling step of peeling the adhesive sheet from the electronic component and the first resin composition layer; a second lamination step of laminating a second sealing sheet having at least a curable second resin composition layer so as to cover an exposed surface of the electronic component exposed by peeling of the adhesive sheet; a curing step of obtaining a sealing body including a first cured layer obtained by curing the first resin composition layer, a second cured layer obtained by curing the second resin composition layer, and the electronic component sealed by the first cured layer and the second cured layer; a hole forming step of forming a hole that exposes a part of a surface of the electronic component and penetrates at least one of the first cured layer and the second cured layer; a desmear (desmear) step in which the sealing body having the hole formed therein is desmear-treated; and an electrode forming step of forming an electrode electrically connected to the electronic component through the hole (invention 1).

The method for manufacturing a semiconductor device according to the invention (invention 1) includes the above steps, and thus the steps up to the formation of the electrode can be efficiently performed with extremely simple work content. Further, since the holes are formed in at least one of the first cured layer and the second cured layer and the electrodes are provided in the holes, the electrodes can be formed on a desired side of the semiconductor package, particularly on both sides, and thus the three-dimensional mounting of the semiconductor package is also facilitated, and as a result, the high integration and high functionality of the semiconductor device are facilitated. The above-described manufacturing method is also applicable to manufacturing of FOWLP, FOPLP, a substrate with built-in components, and the like. In particular, since the above-described manufacturing method can seal a plurality of electronic components at a time, it is applicable to, for example, a manufacturing process of a so-called panel-level package in which a frame-shaped member described later and a plurality of electronic components are sealed at a time.

In the above invention (invention 1), it is preferable that the curing of the first resin composition layer is performed at a stage between the first laminating step and the peeling step (invention 2).

In the above inventions (inventions 1 and 2), at least one of the first cured layer and the second cured layer preferably exhibits an insulating property (invention 3).

In the above inventions (inventions 1 to 3), it is preferable that curing of at least one of the first resin composition layer and the second resin composition layer is performed by heat treatment (invention 4).

In the above invention (invention 4), it is preferable that the heat treatment is performed in stages by a plurality of heat treatments (invention 5).

In the above invention (invention 5), the heat treatment is preferably performed by a first heat treatment of performing heat curing at a temperature T1 and a second heat treatment of performing heat curing at a temperature T2 higher than a temperature T1 (invention 6).

In the above inventions (inventions 1 to 6), it is preferable that the curing of the first cured layer is performed so that the reaction rate of the first cured layer becomes 85% or more (invention 7).

In the above inventions (inventions 1 to 7), it is preferable that the curing of the second resin composition layer is performed so that the reaction rate of the second cured layer becomes 85% or more (invention 8).

In the above inventions (inventions 1 to 8), it is preferable that at least one of the first resin composition layer and the second resin composition layer is formed of a resin composition containing a thermosetting resin (invention 9).

In the above invention (invention 9), it is preferable that the resin composition contains an inorganic filler (invention 10).

In the above invention (invention 10), it is preferable to use a minimum coverage area of less than 550m²The inorganic filler was surface-treated with/g of a surface treating agent (invention 11).

In the above inventions (inventions 9 to 11), it is preferable that the first resin composition layer and the second resin composition layer are formed of the resin compositions having the same composition (invention 12).

In the above inventions (inventions 1 to 12), it is preferable that the thickness of the second resin composition layer is 1 μm or more and 100 μm or less (invention 13).

In the above inventions (inventions 1 to 13), it is preferable that the thickness of the first resin composition layer is 50 μm or more and 1000 μm or less (invention 14).

Effects of the invention

The method for manufacturing a semiconductor device according to the present invention can realize high integration and high functionality of a semiconductor device, and can be applied to a method with high efficiency and high yield.

Drawings

Fig. 1 is a sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 2 is a sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 3 is a sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 4 is a sectional view illustrating a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

Detailed Description

Hereinafter, embodiments of the present invention will be described. A method for manufacturing a semiconductor device according to an embodiment of the present invention includes: an electronic component mounting step of mounting 1 or 2 or more electronic components on the adhesive surface of the adhesive sheet; a first laminating step of laminating the first resin composition layer in a first sealing sheet having at least a curable first resin composition layer so as to cover at least the electronic component; a peeling step of peeling the adhesive sheet from the electronic component and the first resin composition layer; a second lamination step of laminating a second sealing sheet having at least a curable second resin composition layer so as to cover an exposed surface of the electronic component exposed by the peeling of the adhesive sheet; a curing step of obtaining a sealing body including a first cured layer obtained by curing the first resin composition layer, a second cured layer obtained by curing the second resin composition layer, and the electronic component sealed by the first cured layer and the second cured layer; a hole forming step of forming a hole that exposes a part of a surface of the electronic component and penetrates at least one of the first cured layer and the second cured layer; a desmear step in which desmear treatment is performed on the sealing body in which the hole is formed; and an electrode forming step of forming an electrode electrically connected to the electronic component through the hole.

[ sealing sheet ]

First, a seal fin that can be used as the first seal fin and the second seal fin will be described. The sealing sheet comprises at least a curable resin composition layer. Here, the resin composition layer having curability means that the resin composition layer is curable, in other words, the resin composition layer is not cured in a state of constituting the sealing sheet. The resin composition layer may be thermosetting or energy ray-curable, and is preferably thermosetting. By making the resin composition layer thermosetting, even when it is difficult to irradiate the laminated resin composition layer with an energy ray, the resin composition layer can be cured well by heating the resin composition layer. The sealing sheet may further include a release sheet laminated on at least one surface of the resin composition layer.

1. Layer of resin composition

The resin composition layer is preferably formed of a resin composition containing a thermosetting resin. By containing a thermosetting resin in the resin composition, the formed resin composition layer can easily have desired curability. Preferably, the cured layer obtained by curing the resin composition layer exhibits insulation properties. By making the cured layer insulating, defects such as short circuits can be suppressed in the resulting semiconductor device, and excellent performance can be obtained. In particular, it is preferable that both the first cured layer and the second cured layer have insulating properties.

(1) Thermosetting resin

By containing the thermosetting resin in the above resin composition, when the electronic component is sealed with the obtained resin composition layer, it is easy to firmly seal the electronic component. The thermosetting resin is not particularly limited as long as it enables curing of the resin composition layer, and for example, a resin usually contained in a sealing material can be used. Specifically, there may be mentioned epoxy resins, phenol resins, naphthol resins, active ester resins, benzoxazine resins, cyanate ester resins, and the like, and these resins may be used alone in 1 kind or in combination of 2 or more kinds.

In general, the epoxy resin has a property of forming a three-dimensional network upon heating to form a strong cured product. As such an epoxy resin, known various epoxy resins can be used, and specific examples thereof include glycidyl ethers of phenols such as bisphenol a, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; glycidyl ethers of alcohols such as butanediol, polyethylene glycol, and polypropylene glycol; glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid, and tetrahydrophthalic acid; glycidyl-type or alkylglycidyl-type epoxy resins obtained by substituting an active hydrogen bonded to a nitrogen atom of aniline isocyanurate or the like with a glycidyl group; examples of the epoxy compound include a so-called alicyclic epoxy compound in which an epoxy group is introduced by oxidizing a carbon-carbon double bond in a molecule, such as vinylcyclohexane diepoxide, 3, 4-epoxycyclohexylmethyl-3, 4-dicyclohexylformate, and 2- (3, 4-epoxy) cyclohexyl-5, 5-spiro (3, 4-epoxy) cyclohexane-m-dioxane. Further, epoxy resins having a biphenyl skeleton, a triphenylmethane skeleton, a dicyclohexyldiene skeleton, a naphthalene skeleton, or the like can also be used. These epoxy resins may be used alone in 1 kind, or may be used in combination in 2 or more kinds. Among the above epoxy resins, glycidyl ether of bisphenol a (bisphenol a type epoxy resin), epoxy resin having a biphenyl skeleton (biphenyl type epoxy resin), epoxy resin having a naphthalene skeleton (naphthalene type epoxy resin), or a combination thereof is preferably used.

Examples of the phenol resin include bisphenol a, tetramethylbisphenol a, diallylbisphenol a, dihydroxybiphenyl (biphenol), bisphenol F, diallylbisphenol F, triphenylmethane-type phenol, tetraphenol, novolak-type phenol, cresol novolak resin, phenol having a biphenyl aralkyl skeleton (biphenyl-type phenol), and the like, and among them, biphenyl-type phenol is preferably used. These phenol resins may be used alone in 1 kind, or may be used in combination in 2 or more kinds. When an epoxy resin is used as the curable resin, it is preferable to use a phenol resin together from the viewpoint of reactivity with the epoxy resin and the like.

The content of the thermosetting resin in the resin composition is preferably 10% by mass or more, particularly preferably 15% by mass or more, and more preferably 20% by mass or more. The content is preferably 60% by mass or less, particularly preferably 50% by mass or less, and more preferably 40% by mass or less. When the content is 10 mass% or more, the curing of the resin composition layer 11 becomes more sufficient, and the electronic component can be more firmly sealed. Further, by setting the content to 60 mass% or less, the curing of the resin composition layer 11 at an unintended stage can be further suppressed, and the storage stability becomes further excellent. The content of the thermosetting resin is a solid content equivalent.

(2) Thermoplastic resin

Further, the resin composition may contain a thermoplastic resin. By incorporating a thermoplastic resin into the resin composition, the resin composition layer can be easily formed into a sheet shape, and the workability can be improved. Further, the low stress property of the cured layer obtained by curing the resin composition layer can be effectively obtained. Therefore, the thermoplastic resin is not particularly limited as long as it makes it possible to form the resin composition layer into a sheet shape, and for example, a resin usually contained in a sealing material can be used. Examples of the thermoplastic resin include phenoxy resins, olefin resins, polyester resins, polyurethane resins, polyester urethane resins, acrylic resins, amide resins, styrene resins such as styrene-isobutylene-styrene copolymers (SIS), silane resins, rubber resins, polyvinyl acetal resins, polyvinyl butyral resins, polyimide resins, polyamide-imide resins, polyether sulfone resins, polysulfone resins, fluorine resins, and the like, and 1 kind of these resins may be used alone or 2 or more kinds may be used in combination. In addition, from the viewpoint of electrode formability, as the thermoplastic resin, preferably using a phenoxy resin, polyvinyl acetal resin, polyvinyl butyral resin group in the group of at least 1.

The phenoxy resin is not particularly limited, but examples thereof include bisphenol a type, bisphenol F type, bisphenol a/bisphenol F copolymer type, bisphenol S type, bisphenol acetophenone type, novolak type, fluorene type, dicyclopentadiene type, norbornene type, naphthalene type, anthracene type, adamantane type, terpene (terpene) type, trimethylcyclohexane type, dihydroxybiphenyl type, biphenyl type, and the like, and among them, bisphenol a type phenoxy resin is preferably used. The phenoxy resin may have any functional group such as a phenolic hydroxyl group or an epoxy group at its terminal. The phenoxy resin may be used alone in 1 kind or in combination of 2 or more kinds.

The content of the thermoplastic resin in the resin composition is preferably 1% by mass or more, particularly preferably 3% by mass or more, and further preferably 5% by mass or more. The content is preferably 30% by mass or less, particularly preferably 20% by mass or less, and more preferably 10% by mass or less. When the content is in the above range, the resin composition layer can be more easily formed into a sheet shape. The content of the thermoplastic resin is a solid content equivalent.

(3) Inorganic filler

Further, the resin composition may also contain an inorganic filler. By containing the inorganic filler in the resin composition, the cured layer obtained by curing the resin composition layer has excellent mechanical strength, and the coefficient of thermal expansion can be further suppressed to be low, so that the reliability of the obtained semiconductor device can be improved. Examples of the inorganic filler include fillers made of a composite oxide such as silica, alumina, glass, titania, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesia, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, mullite (mullite), cordierite or the like, montmorillonite (montmorillonite), montmorillonite (smithite), boehmite (boehmite), talc, iron oxide, silicon carbide, zirconia or the like, and 1 kind of these may be used alone or 2 or more kinds may be used in combination. Among them, silica fillers and alumina fillers are preferably used, and silica fillers are particularly preferably used.

The inorganic filler is preferably surface-treated with a surface treatment agent having a predetermined minimum coverage area. This makes it possible to obtain the effects described below depending on the surface treatment agent used, while the resin composition is excellent in dispersibility and filling properties of the inorganic filler.

From the viewpoint of suppressing the swelling of the plating layer when the plating layer is formed on the surface of the cured layer obtained by curing the resin composition layer, it is preferable to use the surface treatment agent having a minimum coverage area of less than 550m²A surface treating agent per gram.

Using a minimum footprint of less than 550m²(iv) g of an inorganic filler surface-treated with a surface-treating agentThe alkaline treatment solution used in the skim coat step has high affinity, and when the cured layer is exposed to the treatment solution, the inorganic filler is easily detached from the cured layer. Therefore, when the plating treatment of the metal is performed in the electrode forming step after the desmear step, the metal enters the portion of the solidified layer from which the inorganic filler is detached, and an anchor effect is exhibited, and the plating layer is firmly adhered to the solidified layer. As a result, air is less likely to enter the interface between the solidified layer and the plating layer, and even if heat is generated in the subsequent manufacturing process or in the use of the obtained semiconductor device, the air is prevented from expanding and bubbling of the plating layer is prevented.

From the viewpoint of more effectively suppressing the occurrence of plating blistering, the minimum coverage area of the surface treatment agent is preferably 520m²A specific ratio of 450m or less per gram²The ratio of the carbon atoms to the carbon atoms is less than g. On the other hand, the lower limit of the minimum coverage area of the surface treatment agent is preferably 100m²A specific ratio of 200m or more per gram²A total of 300m or more²More than g. By making the minimum coverage area 100m²The content of the inorganic filler is more than g, and the dispersibility, filling property, and the like of the inorganic filler in the resin composition are more excellent.

In addition, the minimum coverage area (m) of the surface treatment agent²The term,/g), means the area (m) of the monolayer formed by using 1g of the surface treating agent²). The minimum coverage area can be theoretically calculated according to the structure of the surface treatment agent, for example, when considering a surface treatment agent having trialkoxysilyl groups as reactive groups, Si (O) produced by hydrolysis of the trialkoxysilyl groups₃The structure of (1) is a tetrahedron having 1 Si atom and 3O atoms as vertices. Here, it is assumed that the Si atom has a radius of

The O atom has a radius of

Of a distance of Si-O bonds of

The angle formed by the edges of the two Si-O bonds was 109.5 deg.. Then, assuming that all 3O atoms in the tetrahedron are reacted with hydroxyl groups on the surface of the inorganic filler, and the smallest circular area that can be covered by 3O atoms is calculated, the surface treatment agent is 1.33X 10 per 1 molecule^{- 19}m²Per molecule. It was 8.01X 10 in terms of per 1 mol⁴m²The minimum area covered by the surface treatment agent (m) can be obtained by dividing the area per 1 mole by the molecular weight of the surface treatment agent²/g)。

Is less than 550m as the minimum coverage area²Suitable examples of the surface treating agent per gram include epoxysilane and vinylsilane. They may be used alone or in combination.

Specific examples of the epoxy silane include 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, and 2- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane. Among them, 3-glycidyloxypropyltrimethoxysilane is preferably used from the viewpoint of effectively promoting the detachment of the inorganic filler.

Specific examples of the vinyl silane include vinyl triacetoxysilane, vinyl trimethoxysilane, vinyl triethoxysilane, vinyl trichlorosilane, and vinyl tris (2-methoxyethoxy) silane. Among these, vinyltrimethoxysilane is preferably used from the viewpoint of effectively promoting the detachment of the inorganic filler.

The shape of the inorganic filler may be any of granular, needle-like, plate-like, amorphous, and the like, but when a substance surface-treated with the surface-treating agent is used as the inorganic filler, the inorganic filler is preferably spherical in terms of effectively performing the surface treatment.

The average particle diameter of the inorganic filler is preferably 0.01 μm or more, particularly preferably 0.1 μm or more, and more preferably 0.3 μm or more. The average particle diameter of the inorganic filler is preferably 3.0 μm or less, and particularly preferably 1.0 μm or less. When the inorganic filler has an average particle diameter of 0.01 μm or more, when the inorganic filler is surface-treated with the surface-treating agent, the inorganic filler has a surface area which is easy to be surface-treated with the surface-treating agent, and thus the surface treatment can be effectively performed. On the other hand, by setting the average particle diameter of the inorganic filler to 3.0 μm or less, the inorganic filler is favorably filled in the cured layer, and the cured layer has more favorable mechanical strength. In particular, when a material surface-treated with the surface-treating agent is used as the inorganic filler, the inorganic filler has a surface area which is easily surface-treated with the surface-treating agent by setting the average particle diameter to 3.0 μm or less, and thus the surface treatment can be effectively performed. The average particle diameter of the inorganic filler in the present specification is a value measured by a dynamic light scattering method using a particle size distribution measuring apparatus (Nikkiso co., ltd., product name "Nanotrac Wave-UT 151").

The maximum particle diameter of the inorganic filler is preferably 0.05 μm or more, and particularly preferably 0.5 μm or more. The maximum particle diameter is preferably 5 μm or less, and particularly preferably 3 μm or less. By making the maximum particle diameter of the inorganic filler in the above range, it is easy to fill the inorganic filler in the cured layer, and the cured layer has more excellent mechanical strength. The maximum particle diameter of the inorganic filler in the present specification means a value measured by a dynamic light scattering method using a particle size distribution measuring apparatus (Nikkiso co., manufactured by ltd., product name "nanotrac wave-UT 151").

The content of the inorganic filler in the resin composition is preferably 40% by mass or more, and particularly preferably 50% by mass or more. When the content is 40 mass% or more, the cured layer can have mechanical strength and the effect of surface treatment with the surface treatment agent. The content of the inorganic filler in the resin composition is preferably 90% by mass or less, particularly preferably 85% by mass or less, and more preferably 80% by mass or less. By making the content of the inorganic filler 90 mass% or less, the resin composition layer has better mechanical strength. The content of the inorganic filler is a solid content equivalent.

(4) Curing catalyst

The resin composition preferably further contains a curing catalyst. This allows the curing reaction of the thermosetting resin to proceed efficiently, and the resin composition layer to be cured satisfactorily. Examples of the curing catalyst include imidazole curing catalysts, amine curing catalysts, and phosphorus curing catalysts.

Specific examples of the imidazole-based curing catalyst include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1, 2-dimethylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and the like, 2-phenyl-4, 5-bis (hydroxymethyl) imidazole, etc., and 2-ethyl-4-methylimidazole is preferably used from the viewpoint of reactivity.

Specific examples of the amine curing catalyst include triazine (triazine) compounds such as 2, 4-diamino-6- [2 '-methylimidazolyl- (1') ] ethyl-s-triazine, and tertiary amine compounds such as 1, 8-diazabicyclo [5,4,0] undec-7-ene (DBU), triethylenediamine, benzyldimethylamine, and triethanolamine. Among them, 2, 4-diamino-6- [2 '-methylimidazolyl- (1') ] ethyl-s-triazine is preferable.

Specific examples of the phosphorus-based curing catalyst include triphenylphosphine, tributylphosphine, tris (p-methylphenyl) phosphine, and tris (nonylphenyl) phosphine.

The curing catalyst may be used alone in 1 kind, or may be used in combination in 2 or more kinds.

The content of the curing catalyst in the resin composition is preferably 0.01% by mass or more, particularly preferably 0.05% by mass or more, and more preferably 0.1% by mass or more. The content is preferably 2.0% by mass or less, particularly preferably 1.5% by mass or less, and further preferably 1.0% by mass or less. When the content is in the above range, the resin composition layer can be cured more favorably. The content of the curing catalyst is a solid content equivalent.

(5) Other ingredients

The resin composition may further contain a plasticizer, a stabilizer, a tackifier, a colorant, a coupling agent, an antistatic agent, an antioxidant, and the like.

(6) Thickness of resin composition layer

The thickness of the first resin composition layer in the first sealing sheet may be set in consideration of the application of sealing, the thickness of the cured resin composition layer after sealing, and the like, and is not particularly limited. The thickness of the first resin composition layer in the first sealing sheet is preferably 50 μm or more, particularly preferably 60 μm or more, and more preferably 70 μm or more. The thickness of the first resin composition layer is preferably 1000 μm or less, more preferably 500 μm or less, particularly preferably 300 μm or less, and further preferably 200 μm or less. By setting the thickness of the first resin composition layer to 50 μm or more, the electronic component can be embedded in the first resin composition layer in a favorable manner in the first laminating step, and the effect of protecting the electronic component by the first cured layer obtained by curing the first resin composition layer can be obtained in a favorable manner. Further, by setting the thickness of the first resin composition layer to 1000 μm or less, the occurrence of cure shrinkage of the first cured layer obtained by curing the first resin composition layer can be reduced, and the occurrence of warpage in the sealing body can be suppressed.

The thickness of the second resin composition layer in the second sealing sheet is preferably 1 μm or more, particularly preferably 5 μm or more, and more preferably 10 μm or more. The thickness of the second resin composition layer is preferably 100 μm or less, more preferably 80 μm or less, and particularly preferably 60 μm. By setting the thickness of the second resin composition layer to 1 μm or more, the effect of protecting the electronic component by the second cured layer obtained by curing the second resin composition layer can be obtained well, and good insulation properties can be obtained. Further, by setting the thickness of the second resin composition layer to 100 μm or less, the occurrence of cure shrinkage of the second cured layer obtained by curing the second resin composition layer can be reduced, and thereby the occurrence of warpage in the sealing body can be suppressed.

2. Release sheet

The sealing sheet may be provided with a release sheet. By providing the release sheet, the workability when storing the sealing sheet or in the first stacking step and the second stacking step becomes excellent. The release sheet may be formed into any desired structure, and examples thereof include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and plastic films such as polyolefin films such as polypropylene and polyethylene. These release surfaces are preferably subjected to a release treatment. Examples of the release agent used for the release treatment include silicone-based, alkyd-based, fluorine-based, and long-chain alkyl-based release agents.

The thickness of the release sheet is not particularly limited, but is usually 20 μm or more and 250 μm or less.

3. Physical Properties of the gasket

In the sealing sheet, the upper limit of the melt viscosity at 90 ℃ before curing (hereinafter, sometimes referred to as "90 ℃ melt viscosity") of the material constituting the resin composition layer is preferably 1.0 × 10⁵Pa "s or less, particularly preferably 1.0X 10⁴Pa "s or less. When the upper limit of the melt viscosity at 90 ℃ is as described above, the electronic component is favorably embedded in the first resin composition layer under heating in the first lamination step, and thus the occurrence of voids around the electronic component can be effectively suppressed. The lower limit of the melt viscosity at 90 ℃ is preferably 1.0Pa "s or more, and particularly preferably 10 Pa" s or more. When the lower limit of the melt viscosity at 90 ℃ is as described above, the material constituting the resin composition layer does not excessively flow when the resin composition layer is laminated on the electronic component under heating in the first lamination step, and contamination of the device or displacement of the chip can be prevented.

Here, the melt viscosity at 90 ℃ of the material constituting the resin composition layer can be measured using a viscoelasticity measuring apparatus. Specifically, the melt viscosity of the resin composition layer 13 having a thickness of 15mm can be measured using MCR302 (manufactured by Anton Paar GmbH) under conditions of a temperature range of 30 to 150 ℃ and a temperature rise rate of 5 ℃/min.

4. Method for manufacturing sealing sheet

The sealing chip used in the method for manufacturing a semiconductor device according to the present embodiment can be manufactured in the same manner as a conventional sealing chip. For example, a sealing sheet can be manufactured by: a coating liquid containing the resin composition and, if necessary, a solvent or a dispersion medium is prepared, and the coating liquid is applied to the release surface of a release sheet using a die coater, a curtain coater, a spray coater, a slit coater, a blade coater, or the like to form a coating film, and the coating film is dried. The coating liquid is not particularly limited in its properties as long as it can be applied, and may contain a component for forming the resin composition layer as a solute or may contain the component as a dispersion. The release sheet may be peeled as a process material, or may protect the resin composition layer until it is used for sealing.

In addition, as a method for producing a laminate in which release sheets are laminated on both surfaces of a sealing sheet, a laminate comprising a resin composition layer and a release sheet can be obtained by applying a coating liquid to the release surface of the release sheet to form a coating film, drying the coating film to form a laminate comprising the resin composition layer and the release sheet, and attaching the coating film to the release surface of another release sheet on the opposite side of the release sheet from the resin composition layer of the laminate. At least one of the release sheets in the laminate may be released as a process material, or the resin composition layer may be protected until used for sealing. Examples of the solvent include organic solvents such as toluene, ethyl acetate, and methyl ethyl ketone.

[ method for manufacturing semiconductor device ]

Next, a method for manufacturing a semiconductor device according to this embodiment will be described. Fig. 1 to 4 are sectional views illustrating an example of a method for manufacturing a semiconductor device according to the present embodiment. First, as shown in fig. 1 (a), as an electronic component mounting step, 1 or 2 or more electronic components 2 are mounted on the adhesive surface of the adhesive sheet 1. The method of placing the electronic component 2 on the adhesive sheet 1 is not particularly limited, and a general method can be employed.

The adhesive sheet 1 is not particularly limited as long as the electronic component 2 can be fixed (releasably fixed) to the sheet by the adhesive force exerted by the sheet, and may be formed of a base material and an adhesive layer laminated on the base material, or may be a base material having self-adhesiveness. In addition, such a base material and adhesive layer preferably have heat resistance that can withstand heating when the first resin composition layer or the second resin composition layer is thermally cured.

Examples of the adhesive constituting the adhesive layer include acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, polyester adhesives, polyvinyl ether adhesives, and the like. The adhesive may also contain plasticizers, stabilizers, tackifiers, colorants, coupling agents, antistatic agents, antioxidants, and the like.

The material constituting the base material of the adhesive sheet 1 is not particularly limited, and examples thereof include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefin films such as polyethylene films and polypropylene films; polyimide films, non-woven fabrics, paper, and the like.

When the adhesive sheet 1 is formed of a substrate and an adhesive layer, the adhesive layer preferably has a storage modulus of 1 × 10 at 100 ℃ and a measurement frequency of 1Hz⁵Pa or above. If the adhesive layer has such a storage modulus, the adhesive sheet 1 can be easily peeled off after the curing step, and a defect (so-called adhesive residue) in which the adhesive remains on the surface of the adherend can be prevented. The upper limit of the storage modulus of the adhesive layer at 100 ℃ and a measurement frequency of 1Hz is not particularly limited, but is preferably 1X 10⁷Pa or less. The storage modulus is a value measured by a torsional shear method (ね, リせ and one-off method) using a dynamic viscoelasticity measuring apparatus, and the details of the measuring method are shown in the examples described below.

The adhesive sheet 1 preferably exhibits the following adhesive force after heating. First, the pressure-sensitive adhesive sheet 1 is adhered to an adherend (copper foil or polyimide film) on the pressure-sensitive adhesive surface, heated at 100 ℃ for 30 minutes, then heated at 180 ℃ for 30 minutes, and further heated at 190 ℃ for 1 hour, and then the adhesive strength at room temperature to the copper foil and the adhesive strength at room temperature to the polyimide film are preferably 0.7N/25mm or more and 2.0N/25mm or less, respectively. When the adhesive force after such heating is within the above range, the adhesive sheet 1 can be effectively prevented from being peeled off during the curing step. Further, when curing of the first resin composition layer described later is performed at a stage between the first laminating step and the peeling step of the adhesive sheet 1, the adhesive sheet 1 is easily peeled even if the adhesive sheet 1 is heated. The details of the method for measuring the adhesive force are shown in the examples described below. In the present specification, room temperature means a temperature of 22 ℃ to 24 ℃.

When the adhesive sheet 1 is formed of a substrate and an adhesive layer, the 5% weight reduction temperature is preferably 250 ℃ or more, and more preferably 300 ℃ or more, from the viewpoint of effectively suppressing adhesive residue caused by deterioration of the adhesive layer when the adhesive sheet 1 is peeled off after heating. The 5% weight reduction temperature can be adjusted by, for example, increasing the degree of crosslinking of an adhesive used in the adhesive layer, reducing the content of low molecules in the adhesive, or the like. The details of the method for measuring the 5% weight loss temperature are shown in the examples described below.

The thickness of the substrate constituting the adhesive sheet 1 may be appropriately set from the viewpoint of workability, cost, and the like, and is, for example, preferably 10 μm or more, particularly preferably 15 μm or more, and further preferably 20 μm or more. The thickness of the base material is preferably 500 μm or less, particularly preferably 300 μm or less, and further preferably 100 μm or less.

When the adhesive sheet 1 is formed of a substrate and an adhesive layer, the thickness of the adhesive layer can be appropriately set from the viewpoint of adhesion, workability, cost, and the like, and is, for example, preferably 1 μm or more, particularly preferably 5 μm or more, and more preferably 10 μm or more. The thickness of the adhesive layer is preferably 500 μm or less, particularly preferably 100 μm or less, and more preferably 50 μm or less.

The electronic component 2 is not particularly limited as long as it is an electronic component that is usually a subject of sealing, and examples thereof include a semiconductor chip and the like. Further, the electronic component 2 may be a component in which a semiconductor chip is placed at a predetermined position of an interposer (interposer). At this time, at least a part of the interposer is sealed together with the semiconductor chip or the like in the state of being mounted. Examples of the interposer include a lead frame, a polyimide tape, and a printed circuit board. Further, a frame (also referred to as a frame-like member) such as a frame made of metal such as copper or a frame made of resin may be provided around the electronic component 2 on the adhesive sheet 1, and at least a part of the frame-like member may be sealed together with the electronic component 2. The frame-shaped member generally includes 1 or more opening portions formed by holes penetrating in the thickness direction and a frame-shaped portion made of copper or the like or resin or the like.

In the case of using the frame-shaped member, in the electronic component mounting step, for example, after the frame-shaped member is mounted on the adhesive surface of the adhesive sheet 1, the electronic component 2 is mounted at the position of the opening of the frame-shaped member. Thus, in the first laminating step, the sealing resin can be prevented from bleeding out of the opening portion, the thickness of the obtained semiconductor device can be made uniform, and further, the occurrence of warpage in the cured layer can be prevented, and warpage of the obtained semiconductor device can be prevented.

Next, as shown in fig. 1 (b), as a first laminating step, the first resin composition layer 3 of the first sealing sheet including at least the curable first resin composition layer 3 is laminated so as to cover the electronic component 2. The first seal piece may be the seal piece described above. When the first sealing sheet has a release sheet on only one surface, it is preferable that the release sheet is peeled from the first resin composition layer 3 after the exposed surface of the resin composition layer in the first sealing sheet is laminated so as to cover the electronic component 2. In the case where the first sealing sheet includes release sheets on both surfaces, it is preferable that after the exposed surface of the resin composition layer exposed by peeling one release sheet is laminated so as to cover the electronic component 2, the other release sheet is peeled from the first resin composition layer 3. In the case where the first sealing sheet has a release sheet on one surface or both surfaces, the first sealing sheet may be laminated so as to cover the electronic component 2, the exposed surface of the resin composition layer 3 in the first sealing sheet may be cured to form a first cured layer 3 'as described later, and then the release sheet may be released from the first cured layer 3'.

The first laminating step may be performed using a conventionally known laminating apparatus, and as a condition for laminating, for example, the temperature of the first resin composition layer 3 is preferably 40 ℃ or higher, and particularly preferably 50 ℃ or higher. The temperature is preferably 180 ℃ or lower, more preferably 150 ℃ or lower, and particularly preferably 120 ℃ or lower. The pressure of the lamination is preferably 0.1MPa or more. The pressure is preferably 0.5MPa or less. The time required for lamination is preferably 10 seconds or longer, and particularly preferably 30 seconds or longer. The time is preferably 10 minutes or less, and particularly preferably 5 minutes or less.

The first laminating step may be performed under normal pressure, but is preferably performed under reduced pressure from the viewpoint of adhesion and embeddability of the first resin composition layer 3 to the electronic component 2. The pressure reduction condition is, for example, preferably 5kPa or less, more preferably 500Pa or less, and particularly preferably 100Pa or less.

Next, as shown in fig. 1 (c), the first resin composition layer 3 is preferably cured to form a first cured layer 3'. The curing is preferably performed by a heat treatment, that is, preferably by heating the first resin composition layer 3. The reaction rate of the first cured layer 3' after completion of curing is preferably 85% or more, preferably 90% or more, and particularly preferably 95% or more. When the first cured layer 3 is cured so that the reaction rate of the first cured layer 3 ' becomes 85% or more, the curing reaction of the first cured layer 3 proceeds more favorably and the three-dimensional network is appropriately formed, so that the surface of the first cured layer 3 ' does not become excessively rough after the desmear step described later and the arithmetic average roughness of the surface of the first cured layer 3 ' becomes relatively small. Accordingly, in the subsequent electrode forming step, since it is difficult to form a conductor inside the first cured layer 3', insulation failure such as short circuit can be effectively suppressed even when a fine electrode is formed. The method of measuring the reaction rate is described in the test examples described below.

From the viewpoint of facilitating the formation of fine electrodes, the arithmetic average roughness (Ra value) of the surface of the first cured layer 3' on the side opposite to the electronic component 2 is preferably 300nm or less, more preferably 150nm or less, particularly preferably 100nm or less, and further preferably 50nm or less. The lower limit of the arithmetic average roughness (Ra value) is not particularly limited, but is preferably 1nm or more, particularly preferably 5nm or more, and further preferably 10nm or more, from the viewpoint of further stabilizing the adhesion of the electrode 7 after the electrode forming step described later. The method of measuring the arithmetic average roughness (Ra value) is described in the test examples described below.

In the curing of the first resin composition layer 3 by heating, the temperature of the heat treatment is preferably 100 ℃ or higher, and more preferably 120 ℃ or higher, for example. The temperature is preferably 240 ℃ or lower, and particularly preferably 200 ℃ or lower. The time of the heat treatment is preferably 15 minutes or longer, and particularly preferably 20 minutes or longer. This time is preferably 300 minutes or less, and particularly preferably 100 minutes or less. The curing of the first resin composition layer 3 by heating is preferably performed in stages by a plurality of heat treatments. Thereby, the reaction rate of the first cured layer 3' can easily reach a desired value. The heating at this time is preferably performed 2 times or more, and particularly more preferably performed by a two-stage heat treatment based on a first heat treatment of performing heat curing at a temperature T1 and a second heat treatment of performing heat curing at a temperature T2 higher than the temperature T1. In this case, in the first heat treatment, the temperature T1 is preferably 100 ℃ to 130 ℃ inclusive, and the time of the heat treatment is preferably 15 minutes to 60 minutes inclusive. In the second heat treatment, the temperature T2 is preferably 150 ℃ to 220 ℃, and the time of the heat treatment is preferably 30 minutes to 120 minutes.

In the example of the method for manufacturing a semiconductor device shown in fig. 1 to 4, the first resin composition layer 3 is cured at a stage between the first laminating step and the peeling step, but may be cured at another stage. For example, the first resin composition layer 3 may be cured after the adhesive sheet 1 is peeled off and before the second sealing sheet is laminated. Further, the curing of the first resin composition layer 3 may be performed simultaneously with the curing of the second resin composition layer after the adhesive sheet 1 is peeled off and the lamination of the second sealing sheet is completed.

Next, as shown in fig. 2 (a), the adhesive sheet 1 is peeled from the electronic component 2 and the first cured layer 3' as a peeling step. When the first resin composition layer 3 is not yet cured during the peeling, the adhesive sheet 1 is a sheet peeled from the electronic component 2 and the first resin composition layer 3. In addition, when the adhesive sheet 1 includes an energy ray-curable adhesive layer, the adhesive layer is irradiated with an energy ray and cured before the peeling as described above, so that the adhesive force of the adhesive sheet 1 is reduced, and the peeling can be easily performed.

Next, as shown in fig. 2 (b), as a second lamination step, a second sealing sheet including at least a curable second resin composition layer 4 is laminated so as to cover the exposed surface of the electronic component 2 exposed by the peeling of the adhesive sheet 1. As the second seal piece, the seal piece described above can be used. As the second sealing sheet, a sealing sheet in which the second resin composition layer 4 is formed of the same material as the first resin composition layer 3 is particularly preferably used. That is, in the method for manufacturing a semiconductor device according to the present embodiment, it is preferable that the first resin composition layer 3 and the second resin composition layer 4 are formed of resin compositions having the same composition from the viewpoint of adhesion between the first resin composition layer 3 and the second resin composition layer 4. When the second sealing sheet has a release sheet on only one surface, it is preferable that the release sheet is peeled from the second resin composition layer 4 after the exposed surface of the resin composition layer in the second sealing sheet is laminated so as to cover the exposed surface of the electronic component 2. In the case where the second sealing sheet includes release sheets on both surfaces, it is preferable that after the exposed surface of the resin composition layer exposed by peeling one release sheet is laminated so as to cover the exposed surface of the electronic component 2, the other release sheet is peeled from the second resin composition layer 4. When the second sealing sheet includes the release sheet, the second sealing sheet may be formed by stacking the exposed surface of the resin composition layer 4 in the second sealing sheet so as to cover the exposed surface of the electronic component 2, and then curing the second resin composition layer 4 to form a second cured layer 4 'as described later, and then releasing the release sheet from the second cured layer 4'.

The second laminating step may be performed using a conventionally known laminating apparatus, and as a condition for laminating, for example, the temperature of the second resin composition layer 4 is preferably 40 ℃ or higher, and particularly preferably 50 ℃ or higher. The temperature is preferably 180 ℃ or lower, more preferably 150 ℃ or lower, and particularly preferably 120 ℃ or lower. The pressure of the lamination is preferably 0.1MPa or more. The pressure is preferably 0.5MPa or less. The time required for lamination is preferably 10 seconds or longer, and particularly preferably 30 seconds or longer. The time is preferably 10 minutes or less, and particularly preferably 5 minutes or less.

The second lamination step may be performed under normal pressure, but is preferably performed under reduced pressure from the viewpoint of adhesion and embeddability of the second resin composition layer 4 to the electronic component 2. The pressure reduction condition is preferably 5kPa or less, and particularly preferably 100Pa or less, for example. The pressure reduction condition is preferably 0.1Pa or more, and particularly preferably 0.1kPa or more.

Next, as shown in fig. 2 (c), the second resin composition layer 4 is cured as a curing step to form a second cured layer 4', thereby obtaining the sealing body 5, and the sealing body 5 includes: a first cured layer 3 'obtained by curing the first resin composition layer 3, a second cured layer 4' obtained by curing the second resin composition layer 4, and an electronic component 2 sealed by the first cured layer 3 'and the second cured layer 4'. The curing of the second resin composition layer 4 is preferably thermal curing, i.e. the second resin composition layer 4 is preferably cured by heating. The reaction rate of the second cured layer 4' after completion of curing is preferably 85% or more, particularly preferably 90% or more, and more preferably 95% or more. Since the curing reaction of the second cured layer 4 is more favorably progressed and the three-dimensional network is moderately developed when the second resin composition layer 4 is cured so that the reaction rate of the second cured layer 4 ' becomes 85% or more, the surface of the second cured layer 4 ' is not excessively roughened after the desmear step described later, and the arithmetic average roughness of the surface of the second cured layer 4 ' is relatively small. Accordingly, in the subsequent electrode forming step, since it is difficult to form a conductor inside the second cured layer 4', insulation failure such as short circuit can be effectively suppressed even when a fine electrode is formed. The method of measuring the reaction rate is described in the test examples described below.

From the viewpoint of facilitating the formation of fine electrodes, the arithmetic average roughness (Ra value) of the surface of the second cured layer 4' on the side opposite to the electronic component 2 is preferably 300nm or less, more preferably 150nm or less, particularly preferably 100nm or less, and even more preferably 50nm or less. The lower limit of the arithmetic average roughness (Ra value) is not particularly limited, but is preferably 1nm or more, particularly preferably 5nm or more, and further preferably 10nm or more, from the viewpoint of further stabilizing the adhesion of the electrode 7 after the electrode forming step described later. The method of measuring the arithmetic average roughness (Ra value) is described in the test examples described below.

In the curing of the second resin composition layer 4 by heating, the temperature of the heat treatment is preferably 100 ℃ or higher, and more preferably 120 ℃ or higher, for example. The temperature is preferably 240 ℃ or lower, and particularly preferably 200 ℃ or lower. The time of the heat treatment is preferably 15 minutes or longer, and particularly preferably 20 minutes or longer. This time is preferably 300 minutes or less, and particularly preferably 100 minutes or less. The curing of the second resin composition layer 4 by heating is preferably performed in stages by a plurality of heat treatments. Thereby, the reaction rate of the second cured layer 4' can easily reach a desired value. The heating at this time is preferably performed 2 times or more, and particularly more preferably performed by a two-stage heat treatment based on a first heat treatment of performing heat curing at a temperature T1 and a second heat treatment of performing heat curing at a temperature T2 higher than the temperature T1. In the first heat treatment, the temperature T1 is preferably 100 ℃ to 130 ℃, and the time of the heat treatment is preferably 15 minutes to 60 minutes. In the second heat treatment, the temperature T2 is preferably 150 ℃ to 220 ℃, and the time of the heat treatment is preferably 30 minutes to 120 minutes.

Next, an electrode can be formed on at least one of the first cured layer and the second cured layer by any conventionally known method. An example of forming an electrode by a semi-additive method will be described below.

That is, after the curing step, as a hole forming step, a hole 6 is formed to penetrate at least one of the first cured layer 3 'and the second cured layer 4' while exposing a part of the surface of the electronic component 2. The holes 6 may be formed on a desired side of the first cured layer 3 'and the second cured layer 4' in accordance with the configuration of the semiconductor device to be obtained, or may be formed on both sides of the first cured layer 3 'and the second cured layer 4'. Here, fig. 3 (a) shows a cross-sectional view of a state in which the holes 6 penetrating the second cured layer 4' are formed. At this time, the hole 6 penetrating from the surface of the second cured layer 4 ' opposite to the first cured layer 3 ' to the interface between the second cured layer 4 ' and the electronic component 2 is formed. On the other hand, fig. 4 (a) shows a sectional view of a state in which the holes 6 penetrating the first cured layer 3' are formed. At this time, the hole 6 penetrating from the surface of the first cured layer 3 ' opposite to the second cured layer 4 ' to the interface between the first cured layer 3 ' and the electronic component 2 is formed. The holes 6 can be formed by a general method, for example, by irradiating a surface on which the holes 6 are formed with laser light under a general irradiation condition using a laser irradiation apparatus.

Next, as a desmear process, desmear processing is performed on the sealing body 5 having the hole 6 formed therein. In the hole forming step, when the holes 6 are formed, a residue (smear) of the components constituting the first cured layer 3 'or the second cured layer 4' is generated, and the smear may remain in the holes 6. However, by performing the desmear step, desmear in the hole 6 can be removed, and when an electrode is formed in the hole 6 in the subsequent electrode forming step, conduction failure of the electrode can be suppressed.

The desmear treatment can be performed by a general method, and for example, can be performed by immersing the sealing body 5 in an alkaline solution at 30 ℃ to 120 ℃ for 1 to 30 minutes. As the alkaline solution to be used, a solution generally used for desmear treatment (desmear solution) can be used, and for example, a sodium hydroxide solution containing potassium permanganate, an aqueous solution containing sodium permanganate and sodium hydroxide, or the like can be used. As the alkaline solution, an aqueous solution containing potassium hydroxide, or the like may be used in addition to an aqueous solution containing sodium permanganate and sodium hydroxide.

Finally, as an electrode forming step, an electrode 7 electrically connected to the electronic component 2 through the hole 6 is formed. Here, fig. 3 (b) is a cross-sectional view showing a state in which the electrodes 7 are formed in the holes 6 formed in the second cured layer 4' in the hole forming step. Fig. 4 (b) is a cross-sectional view showing a state in which the electrodes 7 are formed in the holes 6 formed in the first cured layer 3' in the hole forming step. The electrode 7 can be formed by a general method. For example, the surface of the sealing body 5 on which the hole 6 is formed is plated with a conductive metal such as copper or silver, and the conductive metal is embedded in the hole 6 and covered with the conductive metal. Next, unnecessary portions of the conductive metal covering the surface are removed by etching or the like, and an electrode 7 is formed, the electrode 7 being composed of the conductive metal embedded in the hole 6 and the conductive metal connected to the embedded conductive metal and having a predetermined shape remaining on the surface. Here, the conductive metal remaining on the surface may be formed into a linear shape having a predetermined width and length, thereby forming the electrode 7 in a wiring form. By forming the electrode 7, a semiconductor device including the electronic component 2 sealed and the electrode 7 electrically connected to the electronic component 2 can be obtained.

In the method for manufacturing a semiconductor device according to the present embodiment, as described above, the holes 6 are formed in a desired layer of the first solidified layer 3 'and the second solidified layer 4' in accordance with the application of the semiconductor device, and the electrodes 7 are provided. Further, the holes 6 may be formed in two layers of the first cured layer 3 'and the second cured layer 4', and the electrodes 7 may be provided. Therefore, in the obtained semiconductor device, the electrode 7 can be easily provided at a free position, and the three-dimensional mounting of the obtained semiconductor device can be easily performed. As a result, high integration and high functionality of the semiconductor device are facilitated.

The method for manufacturing a semiconductor device according to this embodiment can also be applied to manufacture of a fan-out wafer level package (FOWLP), a fan-out board level package (FOPLP), a component built-in substrate, and the like. In particular, since the above-described manufacturing method can seal a plurality of electronic components at one time, the package obtained by cutting the electronic components at a predetermined position can be divided into a plurality of semiconductor packages, and the semiconductor packages can be produced with high efficiency and high yield. That is, the method for manufacturing a semiconductor device according to the present embodiment can be applied to a method with high efficiency and high yield.

The embodiments described above are described for easy understanding of the present invention, and are not described for limiting the present invention. Therefore, each element disclosed in the above embodiments also includes all design modifications and equivalents that fall within the technical scope of the present invention.