阅读说明：本技术 一种极紫外光掩模的缺陷修复方法 (Defect repairing method for extreme ultraviolet mask ) 是由 杨渝书 伍强 李艳丽 于 2019-11-12 设计创作，主要内容包括：本发明提供了一种极紫外光掩模的缺陷修复方法,包括以下步骤：步骤10：提供一基底,在所述基底上形成图形化的极紫外光刻胶层,其中,图形化的极紫外光刻胶层具有极紫外光刻胶连桥缺陷和/或极紫外光刻胶断裂缺陷；以及步骤20：对图形化的所述极紫外光刻胶层多次执行极紫外光刻胶修复工艺,所述极紫外光刻胶修复工艺用于修复所述极紫外光刻胶连桥缺陷和/或极紫外光刻胶断裂缺陷。本发明通过对图形化的所述极紫外光刻胶层多次执行极紫外光刻胶修复工艺,以消除图形化的极紫外光刻胶层中可能出现的极紫外光刻胶连桥缺陷和/或极紫外光刻胶断裂缺陷,从而提高极紫外光掩模工艺后的产品良率。(The invention provides a defect repairing method of an extreme ultraviolet mask, which comprises the following steps: step 10: providing a substrate, and forming a patterned extreme ultraviolet photoresist layer on the substrate, wherein the patterned extreme ultraviolet photoresist layer has extreme ultraviolet photoresist bridging defects and/or extreme ultraviolet photoresist breaking defects; and step 20: and repeatedly executing an extreme ultraviolet photoresist repairing process on the patterned extreme ultraviolet photoresist layer, wherein the extreme ultraviolet photoresist repairing process is used for repairing the extreme ultraviolet photoresist bridging defect and/or the extreme ultraviolet photoresist fracture defect. According to the invention, the extreme ultraviolet photoresist repairing process is carried out on the patterned extreme ultraviolet photoresist layer for multiple times, so that the extreme ultraviolet photoresist bridging defect and/or the extreme ultraviolet photoresist breaking defect which may occur in the patterned extreme ultraviolet photoresist layer are eliminated, and the product yield after the extreme ultraviolet mask process is improved.)

1. A method for repairing defects of an extreme ultraviolet photomask is characterized by comprising the following steps:

step 10: providing a substrate, and forming a patterned extreme ultraviolet photoresist layer on the substrate, wherein the patterned extreme ultraviolet photoresist layer has extreme ultraviolet photoresist bridging defects and/or extreme ultraviolet photoresist breaking defects; and

step 20: and repeatedly executing an extreme ultraviolet photoresist repairing process on the patterned extreme ultraviolet photoresist layer, wherein the extreme ultraviolet photoresist repairing process is used for repairing the extreme ultraviolet photoresist bridging defect and/or the extreme ultraviolet photoresist fracture defect.

2. The method for repairing defects of an extreme ultraviolet photomask as claimed in claim 1, wherein the step 20 comprises the following steps:

step 21: forming a polymer layer on the patterned extreme ultraviolet photoresist layer;

step 22: performing an anisotropic etching process on the polymer layer;

step 23: performing a surface treatment process on the polymer layer and the patterned extreme ultraviolet photoresist layer; and

step 24: steps S21 to S23 are executed in a plurality of sequential cycles.

3. The method for repairing defects of an extreme ultraviolet photomask as claimed in claim 2, wherein the number of cycles for performing steps S21 through S23 is between 5 and 15.

4. The method for repairing defects of an extreme ultraviolet photomask as claimed in claim 2, wherein the step 21 is specifically:

and forming a polymer layer on the patterned extreme ultraviolet photoresist layer by a polymer deposition process by using a high polymer reaction gas.

5. The method of repairing defects in an extreme ultraviolet photomask of claim 4, wherein the process parameters of the polymer deposition process are as follows:

the reaction chamber pressure is between 20mtorr and 60 mtorr; the power of the radio frequency source is between 600W and 1500W; the radio frequency bias power is less than or equal to 40W; the etching gas adopts methane, and the gas flow rate of the etching gas is between 100sccm and 400 sccm; the etching time of the etching gas is between 4 seconds and 10 seconds.

6. The method for repairing defects of an extreme ultraviolet photomask as claimed in claim 2, wherein step 22 is specifically:

and performing an anisotropic etching process on the polymer layer by using ion bombardment reaction gas.

7. The method for repairing defects of an extreme ultraviolet photomask of claim 6, wherein the process parameters of the anisotropic etching process are as follows:

the reaction chamber pressure is between 2mtorr and 20 mtorr; the power of the radio frequency source is between 400W and 800W; the radio frequency bias power is between 100W and 300W; argon ions are adopted as etching gas, and the gas flow rate of the etching gas is between 80sccm and 200 sccm; the etching time of the etching gas is between 4 seconds and 10 seconds.

8. The method for repairing defects of an extreme ultraviolet photomask according to claim 2, wherein step 23 specifically comprises:

and performing a surface treatment process on the polymer layer and the patterned extreme ultraviolet photoresist layer by using plasma generated by etching gas.

9. The method for repairing defects of an extreme ultraviolet photomask according to claim 8, wherein the surface treatment process has the following process parameters:

the reaction chamber pressure is between 3mtorr and 10 mtorr; the power of the radio frequency source is between 900W and 1500W; the radio frequency bias power is between 10W and 30W; the etching gas adopts the mixed gas of hydrogen bromide and helium, the gas flow rate of the hydrogen bromide is between 140sccm and 280sccm, and the gas flow rate of the helium is between 30sccm and 80 sccm; the etching time of the etching gas is between 3 seconds and 12 seconds.

10. The method for repairing defects of an extreme ultraviolet photomask of claim 2, further comprising, after step 20:

and etching the substrate by taking the polymer layer and the patterned extreme ultraviolet photoresist layer as masks.

Technical Field

The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a defect repairing method of an extreme ultraviolet mask.

Background

The semiconductor Integrated Circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have resulted in one generation of ICs, each of which has smaller and more complex circuits than the previous generation. In the course of IC development, functional density (i.e., the number of interconnected devices per unit of chip area) has generally increased while geometry (i.e., the smallest element or line that can be created using a fabrication process) has decreased. This scaling down process generally provides benefits by increasing production efficiency and reducing associated costs. Such scaling down also increases the complexity of IC processing and manufacturing. To achieve these advances, similar developments in IC processing and fabrication are required. For example, there is an increasing demand for implementing higher resolution photolithography processes. One Lithography technique is Extreme Ultraviolet Lithography (EUV), and other techniques include X-ray Lithography, ion beam projection Lithography, electron beam projection Lithography, and multi-electron beam maskless Lithography.

EUV is a next generation lithography technique using extreme ultraviolet wavelengths, e.g. 13.5nm, and in particular, for many critical levels, lithographic patterning to pattern smaller technology nodes would require EUV. However, due to the random effect of the EUV photoresist, i.e., the fluctuation of the number of illuminating photons, the EUV photoresist bridging defect is easily generated when the trench line width design requirement is too small, and the EUV photoresist fracture defect is easily generated when the trench line width design requirement is too large in the EUV process.

Disclosure of Invention

The invention aims to provide a defect repairing method of an extreme ultraviolet mask, which is used for repairing an extreme ultraviolet photoresist bridging defect and an extreme ultraviolet photoresist breaking defect.

In order to solve the above problems, the present invention provides a method for repairing defects of an extreme ultraviolet photomask, comprising the steps of:

step 10: providing a substrate, and forming a patterned extreme ultraviolet photoresist layer on the substrate, wherein the patterned extreme ultraviolet photoresist layer has extreme ultraviolet photoresist bridging defects and/or extreme ultraviolet photoresist breaking defects; and

step 20: and carrying out an extreme ultraviolet photoresist repairing process on the patterned extreme ultraviolet photoresist layer for multiple times so as to repair the extreme ultraviolet photoresist bridging defect and/or the extreme ultraviolet photoresist fracture defect.

Optionally, step 20 specifically includes the following steps:

step 21: forming a polymer layer on the patterned extreme ultraviolet photoresist layer;

step 22: performing an anisotropic etching process on the polymer layer;

step 23: performing a surface treatment process on the polymer layer and the patterned extreme ultraviolet photoresist layer; and

step 24: steps S21 to S23 are executed in a plurality of sequential cycles.

Further, the number of cycles of performing steps S21 through S23 is between 5 and 15.

Further, step 21 specifically includes: and forming a polymer layer on the patterned extreme ultraviolet photoresist layer by a polymer deposition process by using a high polymer reaction gas.

Furthermore, the process parameters of the polymer deposition process are as follows: the reaction chamber pressure is between 20mtorr and 60 mtorr; the power of the radio frequency source is between 600W and 1500W; the radio frequency bias power is less than or equal to 40W; the etching gas adopts methane, and the gas flow rate of the etching gas is between 100sccm and 400 sccm; the etching time of the etching gas is between 4 seconds and 10 seconds.

Further, step 22 specifically includes: and performing an anisotropic etching process on the polymer layer by using ion bombardment reaction gas.

Furthermore, the process parameters of the anisotropic etching process are as follows: the reaction chamber pressure is between 2mtorr and 20 mtorr; the power of the radio frequency source is between 400W and 800W; the radio frequency bias power is between 100W and 300W; argon ions are adopted as etching gas, and the gas flow rate of the etching gas is between 80sccm and 200 sccm; the etching time of the etching gas is between 4 seconds and 10 seconds.

Further, step 23 specifically includes: and performing a surface treatment process on the polymer layer and the patterned extreme ultraviolet photoresist layer by using plasma generated by etching gas.

Furthermore, the surface treatment process has the following process parameters: the reaction chamber pressure is between 3mtorr and 10 mtorr; the power of the radio frequency source is between 900W and 1500W; the radio frequency bias power is between 10W and 30W; the etching gas adopts the mixed gas of hydrogen bromide and helium, the gas flow rate of the hydrogen bromide is between 140sccm and 280sccm, and the gas flow rate of the helium is between 30sccm and 80 sccm; the etching time of the etching gas is between 3 seconds and 12 seconds.

Further, after step 20, the method further comprises:

and etching the substrate by taking the polymer layer and the patterned extreme ultraviolet photoresist layer as masks.

Compared with the prior art, the method has the following beneficial effects:

the invention provides a defect repairing method of an extreme ultraviolet mask, which comprises the following steps: step 10: providing a substrate, and forming a patterned extreme ultraviolet photoresist layer on the substrate, wherein the patterned extreme ultraviolet photoresist layer has extreme ultraviolet photoresist bridging defects and/or extreme ultraviolet photoresist breaking defects; and step 20: and repeatedly executing an extreme ultraviolet photoresist repairing process on the patterned extreme ultraviolet photoresist layer, wherein the extreme ultraviolet photoresist repairing process is used for repairing the extreme ultraviolet photoresist bridging defect and/or the extreme ultraviolet photoresist fracture defect. According to the invention, the extreme ultraviolet photoresist repairing process is carried out on the patterned extreme ultraviolet photoresist layer for multiple times, so that the defects of extreme ultraviolet photoresist connecting bridges, extreme ultraviolet photoresist fracture and the like which may occur in the patterned extreme ultraviolet photoresist layer are eliminated, and the product yield after the extreme ultraviolet mask process is improved.

Further, the invention forms a polymer layer on the patterned extreme ultraviolet photoresist layer; performing an anisotropic etching process on the polymer layer; performing a surface treatment process on the polymer layer and the patterned extreme ultraviolet photoresist layer; and circularly executing the steps S21 to S23 for multiple times, eliminating defects such as extreme ultraviolet photoresist bridge defects and extreme ultraviolet photoresist fracture, and improving the line width roughness of the patterned extreme ultraviolet photoresist, thereby improving the quality of the subsequently formed product.

Drawings

Fig. 1 is a schematic flowchart illustrating a method for repairing a defect of an euv mask according to an embodiment of the present invention;

fig. 2a-2d are schematic structural diagrams of steps of a defect repair method for an euv photomask according to an embodiment of the present invention.

Description of reference numerals:

a-an extreme ultraviolet photoresist bridging portion; b-an extreme ultraviolet photoresist breaking part;

100-a substrate; 110-extreme ultraviolet photoresist layer; 110 a-opening;

200-polymer layer.

Detailed Description

The core idea provided by the invention is to provide a defect repairing method of an extreme ultraviolet mask, which comprises the following steps: step 10: providing a substrate, and forming a patterned extreme ultraviolet photoresist layer on the substrate, wherein the patterned extreme ultraviolet photoresist layer has extreme ultraviolet photoresist bridging defects and/or extreme ultraviolet photoresist breaking defects; and step 20: and repeatedly executing an extreme ultraviolet photoresist repairing process on the patterned extreme ultraviolet photoresist layer, wherein the extreme ultraviolet photoresist repairing process is used for repairing the extreme ultraviolet photoresist bridging defect and/or the extreme ultraviolet photoresist fracture defect. According to the invention, the extreme ultraviolet photoresist repairing process is carried out on the patterned extreme ultraviolet photoresist layer for multiple times, so that the defects of extreme ultraviolet photoresist connecting bridges, extreme ultraviolet photoresist fracture and the like which may occur in the patterned extreme ultraviolet photoresist layer are eliminated, and the product yield after the extreme ultraviolet mask process is improved.

Further, the invention forms a polymer layer on the patterned extreme ultraviolet photoresist layer; performing an anisotropic etching process on the polymer layer; performing a surface treatment process on the polymer layer and the patterned extreme ultraviolet photoresist layer; and the steps S21 to S23 are circularly executed for a plurality of times, so that the defects of extreme ultraviolet photoresist connecting bridges, extreme ultraviolet photoresist breakage and the like are eliminated, and the line width roughness of the patterned extreme ultraviolet photoresist is improved.

The method for repairing defects of an extreme ultraviolet photomask according to the present invention will be described in further detail below. The present invention will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.

In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.

In order to make the objects and features of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise ratio for the purpose of facilitating and distinctly aiding in the description of the embodiments of the invention.

The embodiment provides a defect repairing method of an extreme ultraviolet mask. Fig. 1 is a schematic flow chart of a defect repairing method of an euv photomask according to this embodiment. As shown in fig. 1, the forming method includes the steps of:

step S10: providing a substrate, and forming a patterned extreme ultraviolet photoresist layer on the substrate, wherein the patterned extreme ultraviolet photoresist layer has extreme ultraviolet photoresist bridging defects and/or extreme ultraviolet photoresist breaking defects; and

step S20: and repeatedly executing an extreme ultraviolet photoresist repairing process on the patterned extreme ultraviolet photoresist layer, wherein the extreme ultraviolet photoresist repairing process is used for repairing the extreme ultraviolet photoresist bridging defect and/or the extreme ultraviolet photoresist fracture defect.

The method for repairing defects of an extreme ultraviolet photomask according to the present invention will be described in detail with reference to the following embodiments and fig. 2a to 2 d.

Fig. 2a is a schematic structural diagram of the semiconductor device of the present embodiment after a patterned euv photoresist layer is formed. As shown in fig. 2a, step S10 is performed to provide a substrate 100, and a patterned euv photoresist layer 110 is formed on the substrate 100, wherein the patterned euv photoresist layer 110 has an euv photoresist bridging defect and/or an euv photoresist breaking defect.

The method specifically comprises the following steps:

first, a substrate 100 is provided. In this embodiment, the substrate 100 is a planar substrate, and the material of the substrate 100 is a silicon substrate, a silicon germanium substrate, a silicon carbide substrate, a silicon-on-insulator (SOI) substrate, a germanium-on-insulator (GOI) substrate, a glass substrate, or a III-V compound substrate (e.g., a gallium nitride substrate or a gallium arsenide substrate). Other structural layers, such as a composite organic layer barrier layer, are also formed on the substrate 100. In the present embodiment, the patterned euv photoresist layer 110 has euv photoresist bridging defects and euv photoresist cracking defects.

Next, a patterned euv photoresist layer 110 is formed on the substrate 100 through an euv lithography process such as coating, exposure, and development. The patterned euv photoresist layer 110 has an opening 110 a. As shown in fig. 2a, after the patterned euv photoresist layer 110 is formed, an euv photoresist bridging defect may occur at the opening 110a, the euv photoresist of the euv photoresist bridging portion a where the euv photoresist bridging defect occurs has a thickness generally between 1nm and 10nm and a width generally between 1nm and 10nm, and/or the euv photoresist fracture defect occurs and the euv photoresist fracture portion b where the euv photoresist fracture defect occurs has a width generally between 1nm and 10 nm.

In order to repair the euv photoresist bridging defect and/or euv photoresist breaking defect which may occur after the patterned euv photoresist layer 110 is formed, step S20 is performed, and an euv photoresist repairing process is performed on the patterned euv photoresist layer 110 for multiple times, wherein the euv photoresist repairing process is used to repair the euv photoresist bridging defect and/or euv photoresist breaking defect. The step is carried out in a cavity of a subsequent dry etching process, equipment is not added, the increase of process cost is avoided, and the product yield after the extreme ultraviolet mask process is improved.

The method comprises the following steps:

specifically, fig. 2b is a schematic structural diagram of the semiconductor device after the polymer layer is formed. As shown in fig. 2b, step S21 is first performed to form a polymer layer 200 on the substrate 100. Specifically, a polymer layer 200 is formed on the substrate 100 through a polymer deposition process using a high polymer reaction gas (e.g., CH4), the polymer layer 200 covers the substrate 100 exposed by the patterned euv photoresist layer 110, the euv photoresist bridge portion a of the substrate 100 should be exposed, the patterned euv photoresist layer 110 is also filled with euv photoresist fractured portions b, and at this time, since the electron concentration is high at the top of the patterned euv photoresist 110 (i.e. the euv photoresist 110 covering the substrate 100 except the bottom of the opening a), the top of the euv photoresist attracts the positively charged polymer to be highly concentrated, thereby, more polymer is deposited on the top of the EUV photoresist, and less polymer is deposited on the bridge portion a of the EUV photoresist at the bottom of the opening a. The polymer layer 200 is also deposited on the sidewalls of the opening 110a in this step, resulting in an increased critical dimension of the opening 110 a.

Wherein, the process parameters of the deposition process of the polymer layer 200 are as follows: the reaction chamber pressure is between 20mtorr and 60 mtorr; the power of the radio frequency source is between 600W and 1500W; the radio frequency bias power is less than or equal to 40W; the etching gas adopts methane (CH4), and the gas flow rate of the etching gas is between 100sccm and 400 sccm; the etching time of the etching gas is between 4 seconds and 10 seconds.

Fig. 2c is a schematic structural diagram of the semiconductor device after the anisotropic etching process. As shown in fig. 2c, next, step S22 is performed, and an anisotropic etching process is performed on the polymer layer 200. Specifically, an anisotropic etch process is performed on the polymer layer 200 using an ion bombardment reaction gas (e.g., argon ions). In the step, through the bombardment effect of argon ions, the extreme ultraviolet photoresist of the extreme ultraviolet photoresist bridging part a is partially consumed, meanwhile, the top of the extreme ultraviolet photoresist is still protected by the polymer 200, the height of the extreme ultraviolet photoresist is not influenced, and at the extreme ultraviolet photoresist fracture part b, because the extreme ultraviolet photoresist fracture part b is filled with the polymer 200, the extreme ultraviolet photoresist fracture part b can resist the ion etching of the argon ions.

The anisotropic etching process comprises the following process parameters: the reaction chamber pressure is between 2mtorr and 20 mtorr; the power of the radio frequency source is between 400W and 800W; the radio frequency bias power is between 100W and 300W; the etching gas adopts argon ions, and the gas flow rate of the etching gas is between 80sccm and 200 sccm; the etching time of the etching gas is between 4 seconds and 10 seconds.

Next, step S23 is performed to perform a surface treatment process on the polymer layer 200 and the patterned euv photoresist layer 110. Specifically, a surface treatment process is performed on the polymer layer 200 and the patterned euv photoresist layer 110 using a plasma generated from an etching gas (e.g., hydrogen bromide). In this step, through the release of Ultraviolet (UV) light in HBr plasma, the C ═ O bond on the surface of the euv photoresist 110 is broken, and ester or lactone molecular groups are released, so that the surface tension of the euv photoresist 110 becomes gentle, thereby improving the roughness of the line width at the opening a, and simultaneously reducing the critical dimension of the opening a.

Wherein the surface treatment process comprises the following process parameters: the reaction chamber pressure is between 3mtorr and 10 mtorr; the power of the radio frequency source is between 900W and 1500W; the radio frequency bias power is between 10W and 30W; the etching gas is a mixed gas of hydrogen bromide and helium, the gas flow rate of the hydrogen bromide is between 140sccm and 280sccm, and the gas flow rate of the helium is between 30sccm and 80 sccm; the etching time is between 3 seconds and 12 seconds.

Fig. 2d is a schematic structural diagram of the semiconductor device after the defect is eliminated. As shown in FIG. 2d, step S24 is executed next, and steps S21-S23 are executed in a plurality of successive loops, preferably, steps S21-S23 are executed between 5 and 15 loops. The steps S21-S23 are sequentially and circularly executed for a plurality of times, so that the appearance of the patterned extreme ultraviolet photoresist (extreme ultraviolet mask) is protected, the bridging defect or the fracture defect of the extreme ultraviolet photoresist is eliminated, the line width roughness of the patterned extreme ultraviolet photoresist is improved, and the quality of a subsequently formed product is improved. The corresponding process time of S21-S23 in each cycle can be the same or different, and is specifically adjusted according to the process result after each cycle. In other embodiments, the number of cycles may be less than 5, or greater than 15, with the specific number of cycles being adjusted according to the process result after each cycle. Meanwhile, the specific process times in steps S21-S23 may also be adjusted, which are determined according to the process debugging result after each cycle.

In step S20, the multiple-cycle processing is a short-time processing, and specifically, the deposition process of the polymer layer 200 has a short processing time, so as to prevent the topography of the euv photoresist from changing, and meanwhile, the processing time required for the anisotropic etching process is short because the difference between the thicknesses of the polymer 200 at the top of the euv photoresist and the bottom of the opening a is small, and the short-time processes of steps S21 and S22 make the processing time of the surface processing shorter, so as to reduce the critical dimension of the line width of the euv photoresist, which are balanced with each other. Therefore, the euv photoresist bridging defect and/or the euv photoresist breaking defect (especially, the euv photoresist bridging defect) are gradually eliminated in each cycle through the short-time cyclic treatment process of step S20, so that the euv photoresist bridging defect and/or the euv photoresist breaking defect can be completely eliminated after a plurality of cyclic treatment processes.

After step S20, the method further includes: and etching the substrate 100 by using the polymer layer 200 and the patterned extreme ultraviolet photoresist layer 110 as a mask. At this time, since the euv mask is repaired, the repaired mask is a combination of the polymer layer 200 and the patterned euv photoresist layer 110.

In summary, the method for repairing defects of an euv photomask provided by the present invention includes the following steps: step 10: providing a substrate, and forming a patterned extreme ultraviolet photoresist layer on the substrate, wherein the patterned extreme ultraviolet photoresist layer has extreme ultraviolet photoresist bridging defects and/or extreme ultraviolet photoresist breaking defects; and step 20: and repeatedly executing an extreme ultraviolet photoresist repairing process on the patterned extreme ultraviolet photoresist layer, wherein the extreme ultraviolet photoresist repairing process is used for repairing the extreme ultraviolet photoresist bridging defect and/or the extreme ultraviolet photoresist fracture defect. According to the invention, the extreme ultraviolet photoresist repairing process is carried out on the patterned extreme ultraviolet photoresist layer for multiple times, so that the defects of extreme ultraviolet photoresist connecting bridges, extreme ultraviolet photoresist fracture and the like which may occur in the patterned extreme ultraviolet photoresist layer are eliminated, and the product yield after the extreme ultraviolet mask process is improved.

Further, the invention forms a polymer layer on the patterned extreme ultraviolet photoresist layer; performing an anisotropic etching process on the polymer layer; performing a surface treatment process on the polymer layer and the patterned extreme ultraviolet photoresist layer; and circularly executing the steps S21 to S23 for multiple times, eliminating defects such as extreme ultraviolet photoresist bridge defects and extreme ultraviolet photoresist fracture, and improving the line width roughness of the patterned extreme ultraviolet photoresist, thereby improving the quality of the subsequently formed product.

In addition, it should be noted that the description of the terms "first", "second", and the like in the specification is only used for distinguishing each component, element, step, and the like in the specification, and is not used for representing a logical relationship or a sequential relationship between each component, element, step, and the like, unless otherwise specified or indicated.

It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.