阅读说明：本技术 一种用于台面器件的高涂布均匀性负性光刻胶组合物 (High-coating-uniformity negative photoresist composition for mesa device ) 是由 马骥 于 2019-10-30 设计创作，主要内容包括：本发明涉及一种用于台面器件的高涂布均匀性负性光刻胶组合物,包括环化聚异戊二烯：重均分子量范围为20W~30W,分子量分布Mw/Mn范围为1.0～2.0,环化率55%~85%；环化聚丁二烯：重均分子量范围为2W~4W,分子量分布Mw/Mn范围为1.2～2.4,环化率60%~80%；光敏剂：所述光敏剂为2,6-二[(4-叠氮基苯基)亚甲基]-4-甲基-环己酮；偶联剂。该组合物有效保护台面芯片各个位置的衬底,不出现腐蚀钻蚀问题且不出现浮胶、显影不净等质量异常问题。(The invention relates to a high coating uniformity negative photoresist composition for a mesa device, which comprises cyclized polyisoprene: the weight average molecular weight range is 20W-30W, the molecular weight distribution Mw/Mn range is 1.0-2.0, and the cyclization ratio is 55% -85%; cyclized polybutadiene: the weight average molecular weight range is 2W-4W, the molecular weight distribution Mw/Mn range is 1.2-2.4, and the cyclization rate is 60% -80%; photosensitizer: the photosensitizer is 2, 6-bis [ (4-azidophenyl) methylene ] -4-methyl-cyclohexanone; a coupling agent. The composition effectively protects the substrate at each position of the table-board chip, and has no corrosion and undercutting problems and no quality abnormity problems such as floating glue, incomplete development and the like.)

1. A high coating uniformity negative photoresist composition for a mesa device, comprising: comprises that

Cyclized polyisoprene: the weight average molecular weight range is 20W-30W, the molecular weight distribution Mw/Mn range is 1.0-2.0, and the cyclization ratio is 55% -85%;

cyclized polybutadiene: the weight average molecular weight range is 2W-4W, the molecular weight distribution Mw/Mn range is 1.2-2.4, and the cyclization rate is 60% -80%;

photosensitizer: the photosensitizer is 2, 6-bis [ (4-azidophenyl) methylene ] -4-methyl-cyclohexanone

A coupling agent.

2. The high coating uniformity negative photoresist composition for a mesa device according to claim 1, wherein: the weight average molecular weight of the cyclized polyisoprene is 20W-30W, and the molecular weight distribution Mw/Mn is 1.0-1.5.

3. The high coating uniformity negative photoresist composition for a mesa device according to claim 1, wherein: the cyclization rate of the cyclized polyisoprene is 65-80%.

4. The high coating uniformity negative photoresist composition for a mesa device according to claim 1, wherein: the mass concentration range of the cyclized polyisoprene in the composition is 10-30%.

5. The high coating uniformity negative photoresist composition for a mesa device according to claim 1, wherein: the weight average molecular weight of the cyclized polybutadiene is 3.2-3.8W, and the molecular weight distribution Mw/Mn is 1.2-2.4.

6. The high coating uniformity negative photoresist composition for a mesa device according to claim 1, wherein: the cyclization ratio of the cyclized polybutadiene is 70-75%.

7. The high coating uniformity negative photoresist composition for a mesa device according to claim 1, wherein: the mass fraction of the cyclized polybutadiene in the composition is 2-6%.

8. The high coating uniformity negative photoresist composition for a mesa device according to claim 1, wherein: the mass fraction of the photosensitizer in the composition is 0.2-0.6%.

9. The high coating uniformity negative photoresist composition for a mesa device according to claim 1, wherein: the coupling agent includes, but is not limited to, one or a combination of aminopropyltriethoxysilane, glycidoxypropyltrimethoxysilane, methacryloxypropyltrimethoxysilane, vinyltriethoxysilane, ethylenediamine propyltriethoxysilane, and ethylenediamine propylmethyldimethoxysilane.

Technical Field

The invention relates to a composition, in particular to a negative photoresist composition with high coating uniformity for a mesa device.

Background

The cyclized rubber, namely the double-laminated nitrogen negative photoresist, has the characteristics of excellent light transmittance, adhesiveness, acid and alkali resistance, flexibility and the like, and still has an irreplaceable effect in the production of discrete devices and power device chips. Particularly, in the manufacture of mesa power chips, the requirement of 100um-150um deep trench corrosion of devices can be met due to the excellent etching resistance of cyclized rubber-double-laminated nitrogen negative photoresist.

However, the cyclized rubber, i.e., double-stacked nitrogen negative photoresist, used in the current market has poor protection effect on a chip formed after a mesa is coated due to too large difference in thickness uniformity of glue films at different positions of a mesa tube core after coating, so that the photoresist at the boundary position of the mesa is too thin to resist corrosion of an etching solution during coating of the mesa, and an oxide layer of a substrate is damaged or even corroded through the oxide layer, so that a gold plating phenomenon occurs at the position of a protective ring, the appearance of the product is affected, and the oxide layer is penetrated when the situation is serious, so that the chip is ignited and broken through, and the reliability is poor. Even if the gluing procedure is adjusted, the thickness of each position of the table top can not reach a proper level, and the phenomena of severe swelling of a glue film, glue floating, undercutting and the like during development can be caused due to the excessively low gluing rotating speed.

The problems of poor coating uniformity and poor substrate protection caused by high mesa are one of the major problems faced by the current mesa chip process.

Disclosure of Invention

The invention provides a negative photoresist composition with high coating uniformity for a mesa device, which aims to improve the coating uniformity of the photoresist composition on a mesa chip, namely a novel cyclized rubber-double-laminated nitrogen negative photoresist composition.

The technical scheme adopted by the invention is as follows: a high coating uniformity negative photoresist composition for mesa devices comprising

Cyclized polyisoprene: the weight average molecular weight range is 20W-30W, the molecular weight distribution Mw/Mn range is 1.0-2.0, and the cyclization ratio is 55% -85%;

cyclized polybutadiene: the weight average molecular weight range is 2W-4W, the molecular weight distribution Mw/Mn range is 1.2-2.4, and the cyclization rate is 60% -80%;

photosensitizer: the photosensitizer is 2, 6-bis [ (4-azidophenyl) methylene ] -4-methyl-cyclohexanone

A coupling agent.

Further, the weight average molecular weight of the cyclized polyisoprene is 20W-30W, and the molecular weight distribution Mw/Mn is 1.0-1.5.

Further, the cyclization ratio of the cyclized polyisoprene is 65-80%.

Further, the mass concentration range of the cyclized polyisoprene in the composition is 10-30%.

Furthermore, the weight average molecular weight of the cyclized polybutadiene is 3.2-3.8W, and the molecular weight distribution Mw/Mn range is 1.2-2.4.

Further, the cyclization ratio of the cyclized polybutadiene is 70% -75%.

Further, the mass fraction of the cyclized polybutadiene in the composition ranges from 2% to 6%.

Further, the mass fraction of the photosensitizer in the composition is 0.2-0.6%.

Further, the coupling agent includes, but is not limited to, one or a combination of aminopropyltriethoxysilane, glycidoxypropyltrimethoxysilane, methacryloxypropyltrimethoxysilane, vinyltriethoxysilane, ethylenediamine propyltriethoxysilane, and ethylenediamine propylmethyldimethoxysilane.

The beneficial effects produced by the invention comprise: according to the invention, the aims of simultaneously improving the coating uniformity of the table top of the photoresist and increasing the exposure crosslinking density of the photoresist film under unit thickness are fulfilled by matching isoprene and butadiene cyclized rubber, the acid resistance and the swelling resistance of the film are enhanced, and the table top glass is protected from being corroded by corrosive liquid on the basis of not reducing the process efficiency.

Drawings

FIG. 1a illustrates a conventional negative photoresist mesa coating configuration;

FIG. 1b is an example of a thickness of a photoresist coating at a mesa interface;

FIG. 2a is an enlarged illustration of an optical microscope showing the glass layer broken after the mesa has been etched;

FIG. 2b SEM cross-sectional enlarged illustration of glass layer breakage after mesa etching

FIG. 3 is a photograph of a mesa coating configuration;

FIG. 4 Table top coating of photoresist in example 1;

FIG. 5 photograph showing the state of the surface after development in example 1

FIG. 6 glass morphology after etching for the sample of example 1;

FIG. 7 Table top coating morphology picture of example 2;

FIG. 8 shows the photoresist mesa coating in example 2;

FIG. 9 glass morphology after mesa etching in example 2;

FIG. 10 Table top coating morphology picture of example 3;

FIG. 11 shows the photoresist mesa coating in example 3;

FIG. 12 glass morphology after mesa etching;

FIG. 13 illustrates a coating condition a for RFJ-210-450TVS chip mesa coating pattern;

FIG. 14 coating condition a RFJ-210 mesa coating film thickness data;

FIG. 15 coating condition a RFJ-210 and 450 mesa etch profile;

FIG. 16 illustrates the RFJ-210-450 coating pattern under the coating condition b;

FIG. 17 coating Condition b RFJ-210 coating morphology;

FIG. 18 SC-450 mesa coating configuration;

FIG. 19 SC-450 mesa coating film thickness data;

FIG. 20 illustrates the coating profile after SC-450 adjustment;

FIG. 21 SC-450 mesa coating film thickness data;

FIG. 22 SC-450 thickened dots of applied glue residual picture;

FIG. 23 SC-450 shows a thick coating etch residue image.

Detailed Description

The present invention is explained in further detail below with reference to the drawings and the specific embodiments, but it should be understood that the scope of the present invention is not limited to the specific embodiments.