Method for improving Local Back Surface Field (LBSF) process stability
阅读说明：本技术 一种提升局部背电场(lbsf)工艺稳定性的方法 (Method for improving Local Back Surface Field (LBSF) process stability ) 是由 吴俊旻 张鹏 王岚 尹丙伟 杨蕾 于 2019-09-24 设计创作，主要内容包括：本发明公开了一种提升局部背电场(LBSF)工艺稳定性的方法,属于晶硅太阳能电池生产制造技术领域中的一种电池制造工艺,其目的在于提供一种提升局部背电场(LBSF)工艺,其技术方案为(1)PERC电池的半成品加工；(2)采用激光在步骤(1)中PERC电池的半成品的背面氧化铝及氮化硅膜进行激光开槽；(3)使用丝网印刷将硼源印刷至激光开槽区域；(4)采用激光在步骤(3)将硼源上的硼原子掺杂至PERC电池半成品中部的P型硅中；(5)采用HF溶液对磷源进行清洗；(6)采用丝网印刷形成PERC电池成品；本发明提供一种提升局部背电场(LBSF)工艺稳定性的方法,在局部背电场的工艺中额外添加一道激光工艺,就能有效提升效率以及产品的良率,进而提升产品的加工效率和质量。(The invention discloses a method for improving the stability of a Local Back Surface Field (LBSF) process, belongs to a cell manufacturing process in the technical field of crystalline silicon solar cell production and manufacturing, and aims to provide a process for improving the Local Back Surface Field (LBSF), wherein the technical scheme is (1) the semi-finished product processing of a PERC cell; (2) performing laser grooving on the back aluminum oxide and silicon nitride film of the semi-finished product of the PERC cell in the step (1) by adopting laser; (3) printing a boron source to the laser grooved area using screen printing; (4) doping boron atoms on a boron source into P-type silicon in the middle of the semi-finished product of the PERC cell in the step (3) by adopting laser; (5) cleaning a phosphorus source by adopting an HF solution; (6) forming a PERC battery finished product by adopting screen printing; the invention provides a method for improving the stability of a Local Back Surface Field (LBSF) process, wherein a laser process is additionally added in the local back surface field process, so that the efficiency and the yield of products can be effectively improved, and the processing efficiency and the quality of the products are further improved.)
1. A method for improving the stability of a Local Back Surface Field (LBSF) process is characterized by comprising the following steps:
(1) carrying out film coating processing on a back side aluminum oxide film and a front and back side silicon nitride film of the PERC battery to form a semi-finished product of the PERC battery;
(2) performing laser grooving on the back side aluminum oxide and silicon nitride film of the semi-finished product of the PERC battery in the step (1) by adopting laser, wherein the specific position of the laser grooving is AI in the back side aluminum oxide film 2O 3Passivation layer and SiN xTwo side positions of the antireflection layer along the symmetry axis;
(3) printing a boron source to the laser grooving area by using a screen printing mode, wherein the boron source is printed to the laser grooving area in a sizing material mode;
(4) doping boron atoms on the boron source in the step (3) into P-type silicon in the middle of the semi-finished product of the PERC cell by using laser, wherein the doped P-type silicon forms a P-type silicon doped region, and the square resistance of the P-type silicon doped region is 10-50 ohm/sq;
(5) cleaning the redundant phosphorus source in the step (4) by adopting an HF solution, wherein the concentration of the HF solution is as follows: 5% -15%;
(6) and (5) printing the semi-finished product of the PERC battery in the step (5) by adopting screen printing to form a PERC battery finished product.
2. The method of claim 1, wherein the method comprises the steps of: the laser is nanosecond laser or picosecond laser, and the wavelength of the nanosecond laser or the picosecond laser is 532 nm.
3. The method of claim 1, wherein the method comprises the steps of: and (4) the back electrode in the finished product of the PERC battery formed in the step (6) is an aluminum electrode, and one end of the aluminum electrode is placed in the laser groove.
4. The method of claim 1, wherein the method comprises the steps of: the method is suitable for processing single side or double sides of the battery.
Technical Field
The invention belongs to the technical field of production and manufacturing of crystalline silicon solar cells, and particularly relates to a method for improving the stability of a Local Back Surface Field (LBSF) process.
Background
The local back electric field (LBSF) technology is a method for effectively improving efficiency on the basis of the PERC battery technology, the existing main technology is to print a boron source after a back passivation layer (comprising aluminum oxide and a silicon nitride film), then dry the boron source and then perform a laser doping process, in the existing local back electric field (LBSF) technology, in which laser is used for simultaneously performing passivation layer slotting and boron source doping work in the existing technology, the main mode is to adopt primary laser, print the boron source after the back passivation layer, then perform the laser doping process after the boron source is dried, and simultaneously perform passivation layer slotting and boron source doping work in the existing technology, so that poor doping stability is caused, the efficiency and yield are influenced, and the reliability of a battery product is also influenced. According to the method, only one laser process needs to be additionally added in the process of the local back electric field, so that the efficiency and the yield of products can be effectively improved, and the enterprise profit is further improved. Meanwhile, the method designed by the patent is simple, quick and effective in implementation way. Has great benefit for practical production. In addition, by means of the scheme provided by the patent, the production of bad products can be reduced, the production efficiency of the solar cell is improved, and the yield of the product can be effectively improved.
Disclosure of Invention
The invention aims to: in order to solve the stability of a local back electric field (LBSF) technology in the prior art, a method for improving the stability of the local back electric field (LBSF) process is provided, and a laser process is additionally added in the local back electric field process, so that the efficiency and the yield of products can be effectively improved, and the processing efficiency and the quality of the products are further improved.
The technical scheme adopted by the invention is as follows:
a method for improving the stability of a Local Back Surface Field (LBSF) process comprises the following steps:
(1) processing a back side aluminum oxide film and a front side silicon nitride film of the PERC battery to form a semi-finished product of the PERC battery;
(2) performing laser grooving on the back side alumina film of the semi-finished product of the PERC battery in the step (1) by adopting laser, wherein the specific position of the laser grooving is AI in the back side alumina film 2O 3Passivation layer and SiN xTwo side positions of the antireflection layer along the symmetry axis;
(3) printing a boron source to the laser grooving area by using a screen printing mode, wherein the boron source is printed to the laser grooving area in a sizing material mode;
(4) doping boron atoms on the boron source in the step (3) into P-type silicon in the middle of the semi-finished product of the PERC cell by using laser, wherein the doped P-type silicon forms a P-type silicon doped region, and the square resistance of the P-type silicon doped region is 10-50 ohm/sq;
(5) cleaning the redundant phosphorus source in the step (4) by adopting an HF solution, wherein the concentration of the HF solution is as follows: 5% -15%;
(6) and (5) printing the semi-finished product of the PERC battery in the step (5) by adopting screen printing to form a PERC battery finished product.
Further, the laser is a nanosecond laser or a picosecond laser, and the wavelength of the nanosecond laser or the picosecond laser is 532 nm.
Further, the back electrode in the finished product of the PERC cell formed in the step (6) is an aluminum electrode, and one end of the aluminum electrode is placed in the laser groove.
Furthermore, the method is suitable for processing one side or two sides of the battery.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
according to the method disclosed by the invention, a laser process is additionally added in the process of the local back electric field, so that the efficiency and the yield of products can be effectively improved, and the production efficiency and quality of enterprises are further improved. Meanwhile, the method designed by the patent is simple, quick and effective in implementation way. Has great benefit for practical production. In addition, by means of the scheme provided by the patent, the production of bad products can be reduced, the production efficiency of the solar cell is improved, and the yield of the product can be effectively improved.
Drawings
FIG. 1 is a schematic diagram of forming a P-type doped region according to the present invention.
Fig. 2 is a schematic view of a double-sided finished battery of the present invention.
Fig. 3 is a schematic view of a single-sided finished battery of the present invention.
The labels in the figure are: 1-P type silicon layer, 2-N type doped region, 3-front SiN xAn anti-reflection layer, a 4-N type heavily doped region, a 5-front silver electrode, and a 6-AI 2O 3Passivation layer, 7-SiN xAn antireflection layer, an 8-P type doped region, 9-laser grooving and 10-a back aluminum electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The PERC battery finished product comprises a P-
A method for improving the stability of a Local Back Surface Field (LBSF) process comprises the following steps:
(1) processing a back side aluminum oxide film and a front side silicon nitride film of the PERC battery to form a semi-finished product of the PERC battery;
(2) performing laser grooving on the back side alumina film of the semi-finished product of the PERC battery in the step (1) by adopting laser, wherein the specific position of the laser grooving is AI in the back side alumina film 2O 3Passivation layer and SiN xTwo side positions of the antireflection layer along the symmetry axis;
(3) printing a boron source to the laser grooving area by using a screen printing mode, wherein the boron source is printed to the laser grooving area in a sizing material mode;
(4) doping boron atoms on the boron source in the step (3) into P-type silicon in the middle of the semi-finished product of the PERC cell by using laser, wherein the doped P-type silicon forms a P-type silicon doped region, and the square resistance of the P-type silicon doped region is 10-50 ohm/sq;
(5) cleaning the redundant phosphorus source in the step (4) by adopting an HF solution, wherein the concentration of the HF solution is as follows: 5% -15%;
(6) and (5) printing the semi-finished product of the PERC battery in the step (5) by adopting screen printing to form a PERC battery finished product.
Preferably, the laser is a nanosecond laser or a picosecond laser, and the wavelength of the nanosecond laser or the picosecond laser is 532 nm.
Preferably, the back electrode in the finished product of the PERC cell formed in step (6) is an aluminum electrode, and one end of the aluminum electrode is placed in the laser groove.
Preferably, the method is suitable for processing one side or two sides of the battery; SiN xAn aluminum back field layer is arranged below the antireflection layer, is made of aluminum material and covers SiN xBelow the anti-reflection layer.
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