阅读说明：本技术 一种含有钛杂质中间带的晶体硅材料及其制备方法 (Crystalline silicon material containing titanium impurity intermediate zone and preparation method thereof ) 是由 王新涛 于 2019-09-16 设计创作，主要内容包括：本发明公开了硅材料技术领域的一种含有钛杂质中间带的晶体硅材料的其制备方法,如下步骤,硅片准备,选取硅片,将硅片进行裁剪成所使用硅片正常大小,硅片清洗,先用双氧水和浓硫酸的混合溶液超声清洗基片10～20min,再用去离子水清洗,然后再把基片先后放入丙酮溶液、乙醇溶液和去离子水中超声10～20min,清洗结束后将基片置于烘箱干燥待用,钛薄膜的制备,在准备好的硅片表面制备生成含有钛薄膜的硅片,将带有钛薄膜的硅片用激光辐照,采用YAG,Nd一维线型连续激光,激光器的电流为20～30A,提高基片表面活性,从而增加钛薄膜薄膜与硅片的结合力,使得氮化钛薄膜表面颗粒增加的现象得到明显控制,大大提高晶体硅的整体性能。(The invention discloses a preparation method of a crystalline silicon material containing a titanium impurity intermediate zone, which belongs to the technical field of silicon materials, and comprises the following steps of preparing a silicon wafer, selecting the silicon wafer, cutting the silicon wafer into the normal size of the used silicon wafer, cleaning the silicon wafer, firstly ultrasonically cleaning a substrate for 10-20 min by using a mixed solution of hydrogen peroxide and concentrated sulfuric acid, then cleaning by using deionized water, then sequentially putting the substrate into an acetone solution, an ethanol solution and deionized water for ultrasonic cleaning for 10-20 min, drying the substrate in an oven for standby after cleaning, preparing a titanium film, preparing the silicon wafer containing the titanium film on the surface of the prepared silicon wafer, irradiating the silicon wafer with the titanium film by using laser, adopting YAG and Nd one-dimensional linear continuous laser, wherein the current of the laser is 20-30A, the surface activity of the substrate is improved, so that the binding force between the titanium film and the silicon wafer is increased, and the phenomenon that the particles on the surface of the titanium nitride film, the overall performance of the crystalline silicon is greatly improved.)

1. A method for preparing a crystalline silicon material containing a titanium impurity intermediate zone is characterized in that: the method comprises the following steps:

preparing a silicon wafer: selecting a silicon wafer, and cutting the silicon wafer into the normal size of the used silicon wafer;

cleaning a silicon wafer: firstly, ultrasonically cleaning a substrate for 10-20 min by using a mixed solution of hydrogen peroxide and concentrated sulfuric acid, then cleaning by using deionized water, then sequentially putting the substrate into an acetone solution, an ethanol solution and deionized water for ultrasonic cleaning for 10-20 min, and after cleaning, placing the substrate in an oven for drying for later use;

preparing a titanium film: preparing a silicon wafer containing a titanium film on the surface of the prepared silicon wafer;

irradiating the silicon wafer with the titanium film by using laser: YAG is adopted: nd one-dimensional linear continuous laser, wherein the current of a laser is 20-30A, and the scanning speed is 3-10 mm/s;

and (3) separating fluorine ions in the titanium film on the surface of the silicon wafer: processing a titanium nitride film covered on a semiconductor device by using first plasma, and separating fluorine ions diffused in the titanium nitride film;

passivating the titanium film on the surface of the silicon wafer: processing the titanium nitride film by using second plasma, and performing surface passivation on the titanium nitride film;

annealing treatment: the temperature of the annealing treatment is 400-800 ℃, and the time of the annealing treatment can be 10-30 min.

2. A crystalline silicon material containing an intermediate band of titanium impurities as claimed in claim 1 wherein: the first plasma was a plasma of H2 gas combined with N2 gas.

3. A crystalline silicon material containing an intermediate band of titanium impurities as claimed in claim 1 wherein: the second plasma was a plasma of CH4 gas combined with N2 gas.

4. A crystalline silicon material containing an intermediate band of titanium impurities as claimed in claim 1 wherein: the preparation method of the titanium film adopts an electron beam evaporation method, and the thickness of the titanium film is 30-300 nm.

5. A crystalline silicon material containing an intermediate band of titanium impurities as claimed in claim 1 wherein: the method for processing the titanium film on the surface of the silicon wafer by the first plasma and the second plasma is a dry etching method.

Technical Field

The invention relates to the technical field of silicon materials, in particular to a crystalline silicon material containing a titanium impurity intermediate band and a preparation method thereof.

Background

As energy is consumed, solar cells are present in daily life, silicon-based solar cells account for 90% of the market, but the cost of crystalline silicon is too high and the efficiency of amorphous silicon is too low. In the production and preparation process of crystalline silicon, a titanium film is generally plated on the surface of the crystalline silicon, but in the prior art, the surface activity of the crystalline silicon body is too low, the titanium film is difficult to combine on the surface of the crystalline silicon, and in general, after the titanium film is etched on the surface of the crystalline silicon, air vapor is easy to enter an interlayer between the titanium film and the crystalline silicon in the etching process and particles are produced. Therefore, a crystalline silicon material containing titanium impurity intermediate bands and a preparation method thereof are provided.

Disclosure of Invention

The present invention is directed to a crystalline silicon material containing an intermediate zone of titanium impurity and a method for preparing the same, so as to solve the problems mentioned in the background art.

In order to achieve the purpose, the invention provides the following technical scheme: a method for preparing a crystalline silicon material containing a titanium impurity intermediate zone comprises the following steps:

preparing a silicon wafer: selecting a silicon wafer, and cutting the silicon wafer into the normal size of the used silicon wafer;

cleaning a silicon wafer: firstly, ultrasonically cleaning a substrate for 10-20 min by using a mixed solution of hydrogen peroxide and concentrated sulfuric acid, then cleaning by using deionized water, then sequentially putting the substrate into an acetone solution, an ethanol solution and deionized water for ultrasonic cleaning for 10-20 min, and after cleaning, placing the substrate in an oven for drying for later use;

preparing a titanium film: preparing a silicon wafer containing a titanium film on the surface of the prepared silicon wafer;

irradiating the silicon wafer with the titanium film by using laser: YAG is adopted: nd one-dimensional linear continuous laser, wherein the current of a laser is 20-30A, and the scanning speed is 3-10 mm/s;

and (3) separating fluorine ions in the titanium film on the surface of the silicon wafer: processing a titanium nitride film covered on a semiconductor device by using first plasma, and separating fluorine ions diffused in the titanium nitride film;

passivating the titanium film on the surface of the silicon wafer: processing the titanium nitride film by using second plasma, and performing surface passivation on the titanium nitride film;

annealing treatment: the temperature of the annealing treatment is 400-800 ℃, and the time of the annealing treatment can be 10-30 min.

2. A crystalline silicon material containing an intermediate band of titanium impurities as claimed in claim 1 wherein: the first plasma was a plasma of H2 gas combined with N2 gas.

3. A crystalline silicon material containing an intermediate band of titanium impurities as claimed in claim 1 wherein: the second plasma was a plasma of CH4 gas combined with N2 gas.

4. A crystalline silicon material containing an intermediate band of titanium impurities as claimed in claim 1 wherein: the preparation method of the titanium film adopts an electron beam evaporation method, and the thickness of the titanium film is 30-300 nm.

5. A crystalline silicon material containing an intermediate band of titanium impurities as claimed in claim 1 wherein: the method for processing the titanium film on the surface of the silicon wafer by the first plasma and the second plasma is a dry etching method.

Compared with the prior art, the invention has the beneficial effects that: soaking a mixed solution of hydrogen peroxide and concentrated sulfuric acid, and improving the surface activity of the substrate through an acetone solution, an ethanol solution and deionized water, thereby increasing the binding force of the titanium film and the silicon wafer, defluorinating and passivating the titanium film on the surface of the crystal silicon, controlling water vapor in an air environment to enter the titanium film to inhibit the generation of particles after etching, obviously controlling the phenomenon of increasing the particles on the surface of the titanium nitride film, and greatly improving the overall performance of the crystal silicon.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The invention provides a technical scheme that: a method for preparing a crystalline silicon material containing a titanium impurity intermediate zone.