阅读说明：本技术 一种小型化超宽带功率放大模块 (Miniaturized ultra-wideband power amplification module ) 是由 顾汉清 苏力晟 潘强 于 2019-11-21 设计创作，主要内容包括：本发明提供了一种小型化超宽带功率放大模块,包括依次级联连接的小信号放大器、GaAs功率放大器和GaN HEMT功率放大器,且小信号放大器、GaAs功率放大器和GaN HEMT功率放大器均安装于同一PCB板上。本发明将小信号放大器、GaAs功率放大器集成在一块PCB板上,且皆为50欧姆内匹配,馈电电路简单,有利于减小整体尺寸,PCB板通过焊锡与镀银铜散热基板焊接在一起,增加了接地性能和导热性能,提高整个500MHz至2700MHz超宽带功率50W放大模块的可靠性。(The invention provides a miniaturized ultra-wideband power amplification module which comprises a small signal amplifier, a GaAs power amplifier and a GaN HEMT power amplifier which are connected in a cascade mode in sequence, wherein the small signal amplifier, the GaAs power amplifier and the GaN HEMT power amplifier are all arranged on the same PCB. According to the invention, the small signal amplifier and the GaAs power amplifier are integrated on one PCB and are matched in 50 ohms, the feed circuit is simple, the whole size is favorably reduced, the PCB is welded with the silver-plated copper radiating substrate through soldering tin, the grounding performance and the heat conducting performance are increased, and the reliability of the whole 500 MHz-2700 MHz ultra-wideband power 50W amplifying module is improved.)

1. The miniaturized ultra-wideband power amplification module is characterized by comprising a small signal amplifier (1), a GaAs power amplifier (2) and a GaN HEMT power amplifier (3) which are sequentially connected in a cascade mode, wherein the small signal amplifier (1), the GaAs power amplifier (2) and the GaN HEMT power amplifier (3) are all installed on the same PCB (4).

2. The miniaturized ultra-wideband power amplifier module according to claim 1, characterized in that the small-signal power amplifier (1) is input/output 50 ohm inner-matching for amplifying all frequency signals in the 500MHz to 2700MHz frequency band.

3. The miniaturized ultra-wideband power amplification module of claim 1, wherein the GaAs power amplifier (2) is input/output 50 ohm intra-matching for amplifying all frequency signals in the 500MHz to 2700MHz frequency band.

4. The miniaturized ultra-wideband power amplifier module according to claim 1, characterized in that the GaN HEMT power amplifier (3) is configured to amplify all frequency signals in the 500 to 2700MHz band.

5. The miniaturized ultra-wideband power amplifier module according to claim 4, characterized in that the GaN HEMT power amplifier (3) matches the input and output impedance to 50 ohms in the 500MHz to 2700MHz band by load pulling.

6. The miniaturized ultra-wideband power amplification module of claim 1, wherein the heat dissipation substrate (5) is fixed on the PCB (4) by soldering.

7. The miniaturized ultra-wideband power amplification module according to claim 6, wherein the PCB (4) is provided with a slot, and the GaN HEMT power amplifier (3) is mounted in the slot and fixed on the heat dissipation substrate (5) through soldering.

8. The miniaturized ultra-wideband power amplification module of claim 7, wherein the heat-dissipating substrate (5) is a silver-plated copper block.

9. The miniaturized ultra-wideband power amplification module of claim 1, wherein the board type of the PCB board (4) is RO 4350B.

10. The miniaturized ultra-wideband power amplifying module of claim 9, characterized in that the PCB board (4) has a thickness of 10-30 mil.

Technical Field

The invention belongs to the technical field of power amplifiers, and particularly relates to a miniaturized ultra-wideband power amplification module.

Background

The power amplifier module is a very common device in the electronic information technology, and is mainly applied to occasions where ultra-wideband signal power amplification is needed, and is typically applied to products in the field of signal transmission. The performance of the device affects the performance quality and the operation reliability of the instrument and equipment, and has very important function in electronic communication. However, the power amplifier module in the prior art has the problems of large volume, low efficiency and low reliability.

Disclosure of Invention

The invention aims to solve the problems and provides a miniaturized ultra-wideband power amplification module.

In order to achieve the purpose, the invention adopts the following technical scheme:

a miniaturized ultra-wideband power amplification module comprises a small signal amplifier, a GaAs power amplifier and a GaN HEMT power amplifier which are sequentially connected in a cascade mode, wherein the small signal amplifier, the GaAs power amplifier and the GaN HEMT power amplifier are all installed on the same PCB.

In the miniaturized ultra-wideband power amplification module, the small-signal power amplifier is matched with the input and output of 50 ohms and is used for amplifying all frequency signals in a frequency band from 500MHz to 2700 MHz.

In the miniaturized ultra-wideband power amplification module, the GaAs power amplifier is matched for input and output within 50 ohms and is used for amplifying all frequency signals within a frequency range of 500MHz to 2700 MHz.

In the miniaturized ultra-wideband power amplification module, the GaN HEMT power amplifier is configured to amplify all frequency signals within a frequency band of 500MHz to 2700 MHz.

In the miniaturized ultra-wideband power amplification module, the GaN HEMT power amplifier matches input and output impedance to 50 ohms in a frequency band of 500MHz to 2700MHz through load traction.

In the miniaturized ultra-wideband power amplification module, the heat dissipation substrate is fixed on the PCB through solder.

In the miniaturized ultra-wideband power amplification module, a groove is formed in the PCB, and the GaN HEMT power amplifier is mounted in the groove and fixed on the heat dissipation substrate through soldering tin.

In the miniaturized ultra-wideband power amplification module, the heat dissipation substrate is a silver-plated copper block.

In the miniaturized ultra-wideband power amplification module, the board model of the PCB board is RO 4350B.

In the miniaturized ultra-wideband power amplification module, the thickness of the PCB is 10-30 mil.

The invention has the advantages that: the small signal amplifier and the GaAs power amplifier are matched within 50 ohms, and a feed circuit is simple, so that the overall size is reduced; the GaN HEMT power amplifier performs input and output matching through load traction in a frequency band of 500-2700MHz, so that the reliability of the amplifier is improved; the PCB is welded with the silver-plated copper heat dissipation substrate through soldering tin, so that the grounding performance and the heat conduction performance are improved, and the reliability of the whole 500 MHz-2700 MHz ultra-wideband power 50W amplification module is improved.

Drawings

FIG. 1 is a functional block diagram of a miniaturized ultra-wideband power amplification module of the present invention;

fig. 2 is a schematic structural diagram of a miniaturized ultra-wideband power amplification module according to the present invention;

fig. 3 is a schematic diagram of the installation of a GaN HEMT power amplifier in the miniaturized ultra-wideband power amplification module of the present invention.

Reference numerals: a small-signal amplifier 1; a GaAs power amplifier 2; a GaN HEMT power amplifier 3; a PCB board 4; and a heat dissipating substrate 5.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.

As shown in fig. 1, the present embodiment discloses a miniaturized ultra-wideband power amplification module, which is formed by cascading a small-signal amplifier 1, a GaAs power amplifier 2, and a GaN HEMT power amplifier 3. 50 ohm impedance matching is used among the amplifiers, and the reliability of the power amplifier is improved.

Specifically, the small-signal power amplifier 1 is input and output within 50 ohms, and can amplify all frequency signals within a 500-2700MHz frequency band and output signals of 18 dBm; the GaAs power amplifier 2 is input and output in 50 ohm matching, can amplify all frequency signals in a frequency band of 500 to 2700MHz and outputs signals of 33 dBm; the GaN HEMT power amplifier 3 matches input and output impedance to 50 ohms in a frequency band of 500-2700MHz through load traction, so that the GaN HEMT power amplifier 3 works at an efficiency and power optimal point in the frequency band of 500-2700MHz, all frequency signals in the frequency band of 500-2700MHz are amplified, signals with the minimum value of 47dBm are output in the frequency band of 500-2700MHz, and the power output efficiency is more than 40% in the frequency band of 500-2700 MHz.

Further, as shown in fig. 2 and 3, a heat dissipation substrate 5 is fixed on the PCB 4 through soldering tin, a slot is formed in the PCB 4, and the GaN HEMT power amplifier 3 is mounted in the slot and fixed with the heat dissipation substrate 5 through soldering tin, so that the grounding performance of the whole module is improved, the parasitic parameters of the amplifier are reduced, the reliability of the whole small ultra-wideband power amplification module is improved, and the small signal amplifier 1 is provided; the GaAs power amplifier 2 adopts a label type packaging form, is convenient to install and has good consistency. In addition, here, the heat conductivity between the GaN HEMT power amplifier 3 and the heat dissipation substrate 5 is greatly improved by soldering, which is more beneficial to heat dissipation of the miniaturized ultra-wideband power amplification module.

Preferably, the three stage amplifier is laid out on the same PCB board 4, and the board is preferably RO4350B with a thickness of 20 mil.

The scheme solves the defects of large volume, low efficiency, low reliability and the like of the existing ultra-wideband power amplification module, and meets the requirements of high reliability, small volume, light weight, ultra-wideband, high performance and high power output of the power amplification module.

The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made or substituted in a similar manner to the specific embodiments described herein by those skilled in the art without departing from the spirit or exceeding the scope of the invention as defined in the appended claims, the invention being expressed as directly or indirectly connected.

Although small signal amplifiers 1 are used more herein; a GaAs power amplifier 2; a GaN HEMT power amplifier 3; a PCB board 4; heat sink substrate 5, etc., but does not exclude the possibility of using other terms. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.