阅读说明：本技术 图形优化方法及掩膜版制造方法 (Pattern optimization method and mask manufacturing method ) 是由 倪昶 于 2018-07-17 设计创作，主要内容包括：本发明揭示了一种图形优化方法,所述图形优化方法包括：提供待优化图形,所述待优化图形包括第一图形和第二图形,所述待优化图形具有热区域；对所述第一图形和所述第二图形进行选择性尺寸调整；依据所述热区域对所述选择性尺寸调整进行反馈操作；以及依据所述反馈操作获得优化后的图形。于是,在进行选择性尺寸调整后,进一步对该选择性尺寸调整进行反馈操作,使得选择性尺寸调整对实际图形的影响更合理,有助于提高具有热区域的图形的精度。由此进行的掩膜版制造,可以提高掩膜版的质量。(The invention discloses a graph optimization method, which comprises the following steps: providing a graph to be optimized, wherein the graph to be optimized comprises a first graph and a second graph, and the graph to be optimized is provided with a hot area; selectively resizing the first graphic and the second graphic; performing a feedback operation on the selective sizing according to the thermal zone; and obtaining an optimized graph according to the feedback operation. Therefore, after the selective size adjustment is carried out, the feedback operation is further carried out on the selective size adjustment, so that the influence of the selective size adjustment on the actual graph is more reasonable, and the improvement of the precision of the graph with the hot area is facilitated. The mask plate manufactured by the method can improve the quality of the mask plate.)

1. A method of graph optimization, comprising:

providing a graph to be optimized, wherein the graph to be optimized comprises a first graph and a second graph, the first graph and the second graph are provided with key graphs, and the key graphs of the second graph are correspondingly positioned between the key graphs of the first graph;

selectively resizing the first graphic and the second graphic; and

and continuously adjusting the first graph and the second graph according to the key graph so as to improve the graph precision of the first graph and the second graph after exposure.

2. The pattern optimization method according to claim 1, wherein the first pattern and the second pattern are in the form of a stripe, and the first pattern and the second pattern are arranged in parallel in a longitudinal direction.

3. The pattern optimization method of claim 1, wherein the key pattern is a via pattern.

4. The graph optimization method according to claim 1, wherein the first graph comprises two key graphs, the second graph comprises one key graph, and the key graph of the second graph is correspondingly located between the two key graphs of the first graph.

5. The pattern optimization method according to claim 4, wherein the first pattern includes a first portion, a second portion and a third portion connected in sequence, the first portion is directly opposite to the second pattern, the second portion and the third portion protrude from the second pattern, and the key pattern is located in the first portion and the third portion; the key pattern in the second pattern and the region extending from the key pattern to two sides along the length direction of the second pattern by 40 nm-90 nm are key parts.

6. The pattern optimization method of claim 5, wherein selectively resizing the first pattern and the second pattern comprises:

adding graphics on the side of the first graphics, which is far away from the second graphics;

adding graphics on the side of the third part facing the second graphics; and

and removing the patterns on the side, facing the first pattern, of the second pattern except for the critical part.

7. The graph optimization method of claim 6, wherein continuing to adjust the first graph and the second graph in accordance with the key graph comprises:

removing a first deletion graph from the graph added by the first graph, wherein the first deletion graph is opposite to and far away from the first part and the second part; and

and removing a second abridged graph from the graphs added by the second graph, wherein the second abridged graph is opposite to and far away from the key part.

8. The pattern optimization method according to claim 6, wherein in the pattern addition performed on the side of the first pattern facing away from the second pattern, a first rectangle is added corresponding to the first portion and the second portion, and a plurality of second rectangles are added corresponding to the third portion, the second rectangles being gradually narrowed in width away from the first rectangle and having a maximum width smaller than that of the first rectangle.

9. The pattern optimization method of claim 4, wherein the first pattern is identical to the second pattern, and the key pattern and a region extending from the key pattern to both sides along a length direction of the second pattern in the second pattern are key portions.

10. The pattern optimization method of claim 9, wherein selectively resizing the first pattern and the second pattern comprises:

adding graphics on the side of the first graphics, which is far away from the second graphics; and

and removing the patterns on the side, facing the first pattern, of the second pattern except for the critical part.

11. The graph optimization method of claim 10, wherein continuing to adjust the first graph and the second graph in accordance with the key graph comprises:

removing a first deletion graph from the graphs added by the first graph, wherein the first deletion graph is opposite to and far away from the first graph; and

and removing a second abridged graph from the graphs added by the second graph, wherein the second abridged graph is opposite to and far away from the key part.

12. The pattern optimization method according to claim 7 or 11, wherein a width of the first truncated pattern and the second truncated pattern is denoted as D, a width of the second pattern after pattern addition is denoted as W, and a distance between the first pattern and the second pattern is denoted as S, and then D is proportional to W-S.

13. A method for manufacturing a mask, comprising the pattern optimization method according to any one of claims 1 to 12.

Technical Field

The invention relates to the technical field of semiconductors, in particular to a graph optimization method and a mask manufacturing method.

Background

The photolithography process is one of the important steps in the semiconductor manufacturing process, and the main process is to enlarge the pattern prepared on the mask plate (also called as a photomask) to the substrate by means of a precise instrument after a certain magnification, thereby realizing the preparation of the circuit device.

Due to the small size of the patterns involved in the photolithography process, the possibility of optical effects between adjacent patterns is high, for example, in the case that some patterns also have critical patterns, it is easy to make the actual spacing between adjacent patterns, especially at the critical patterns, small.

Therefore, how to make the mask pattern, especially the pattern with the key pattern, more precise is a constant concern and hard problem in the industry.

Disclosure of Invention

The invention aims to provide a graph optimization method and a mask manufacturing method, which can improve the precision of a graph with a key graph and improve the quality of the mask.

In order to solve the above technical problem, the present invention provides a method for optimizing a graph, comprising:

providing a graph to be optimized, wherein the graph to be optimized comprises a first graph and a second graph, the first graph and the second graph are provided with key graphs, and the key graphs of the second graph are correspondingly positioned between the key graphs of the first graph;

selectively resizing the first graphic and the second graphic; and

and continuously adjusting the first graph and the second graph according to the key graph so as to improve the graph precision of the first graph and the second graph after exposure.

Optionally, for the pattern optimization method, the first pattern and the second pattern are in a long strip shape, and the first pattern and the second pattern are arranged in parallel in a length direction.

Optionally, for the pattern optimization method, the key pattern is a via pattern.

Optionally, for the graph optimization method, the first graph includes two key graphs, the second graph includes one key graph, and the key graph of the second graph is correspondingly located between the two key graphs of the first graph.

Optionally, for the graph optimization method, the first graph includes a first portion, a second portion, and a third portion that are sequentially connected, the first portion is directly opposite to the second graph, the second portion and the third portion protrude from the second graph, and the key graph is located in the first portion and the third portion; the key pattern in the second pattern and the region extending from the key pattern to two sides along the length direction of the second pattern by 40 nm-90 nm are key parts.

Optionally, for the graph optimization method, the selectively resizing the first graph and the second graph includes:

adding graphics on the side of the first graphics, which is far away from the second graphics;

adding graphics on the side of the third part facing the second graphics; and

and removing the patterns on the side, facing the first pattern, of the second pattern except for the critical part.

Optionally, for the graph optimization method, continuously adjusting the first graph and the second graph according to the key graph includes:

removing a first deletion graph from the graph added by the first graph, wherein the first deletion graph is opposite to and far away from the first part and the second part; and

and removing a second abridged graph from the graphs added by the second graph, wherein the second abridged graph is opposite to and far away from the key part.

Optionally, for the graph optimization method, in the graph adding performed on a side of the first graph away from the second graph, a first rectangle is added corresponding to the first portion and the second portion, and a plurality of second rectangles are added corresponding to the third portion, where the second rectangles are gradually narrowed from the side away from the first rectangle, and the maximum width of the second rectangles is smaller than the width of the first rectangle.

Optionally, for the pattern optimization method, the first pattern is the same as the second pattern, and the key pattern in the second pattern and a region extending from the key pattern to both sides along the length direction of the second pattern by 40nm to 90nm are key portions.

Optionally, for the graph optimization method, the selectively resizing the first graph and the second graph includes:

adding graphics on the side of the first graphics, which is far away from the second graphics; and

and removing the patterns on the side, facing the first pattern, of the second pattern except for the critical part.

Optionally, for the graph optimization method, continuously adjusting the first graph and the second graph according to the key graph includes:

removing a first deletion graph from the graphs added by the first graph, wherein the first deletion graph is opposite to and far away from the first graph; and

and removing a second abridged graph from the graphs added by the second graph, wherein the second abridged graph is opposite to and far away from the key part.

Optionally, for the graph optimization method, note that the widths of the first and second truncated graphs are D, the width of the second graph after graph addition is W, and the distance between the first and second graphs is S, then D is proportional to W-S.

The invention also provides a mask manufacturing method, which adopts the graph optimization method.

In the graph optimization method provided by the invention, the graph optimization method comprises the following steps: providing a graph to be optimized, wherein the graph to be optimized comprises a first graph and a second graph, the first graph and the second graph are provided with key graphs, and the key graphs of the second graph are correspondingly positioned between the key graphs of the first graph; selectively resizing the first graphic and the second graphic; and continuously adjusting the first graph and the second graph according to the key graph so as to improve the graph precision of the first graph and the second graph after exposure. Therefore, after the selective size adjustment is carried out, the adjustment is continuously carried out according to the key graph, so that the influence of the selective size adjustment on the actual graph is more reasonable, and the improvement of the precision of the graph with the key graph is facilitated. The mask plate manufactured by the method can effectively improve the quality of the mask plate.

Drawings

FIG. 1 is a photomicrograph of an exposed image;

FIG. 2 is a flow chart of a graph optimization method in one embodiment of the invention;

FIG. 3 is a schematic diagram of providing a graph to be optimized in one embodiment of the present invention;

FIG. 4 is a schematic illustration of selective resizing in one embodiment of the present invention;

FIG. 5 is a diagram illustrating the continued adjustment according to a key pattern according to an embodiment of the present invention;

FIG. 6 is a schematic illustration of an optimized graph in an embodiment of the invention;

FIG. 7 is a schematic diagram of providing a graph to be optimized in another embodiment of the present invention;

FIG. 8 is a schematic illustration of selective resizing in another embodiment of the present invention;

FIG. 9 is a diagram illustrating the continued adjustment according to a key pattern according to another embodiment of the present invention;

FIG. 10 is a schematic diagram of an optimized graph in another embodiment of the invention.

Detailed Description

The method for pattern optimization and the method for manufacturing a reticle of the present invention will be described in more detail with reference to the schematic drawings, in which preferred embodiments of the present invention are shown, it being understood that a person skilled in the art may modify the present invention described herein while still achieving the advantageous effects of the present invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.

The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.

The inventors studied an optimized pattern, as shown in fig. 1, which includes a first pattern 1 and a second pattern 2 after exposure, and a via hole 3 needs to be formed in the first pattern 1 and the second pattern 2 at a later stage. Due to the limitation of the through hole 3, after Selective Size Adjustment (SSA) is performed on the first pattern 1 and the second pattern 2, the first pattern 1 and the second pattern 2 are easily too close to each other, that is, the distance L is smaller than an expected value or a reference value, thereby affecting the quality of the product.

The inventors have analyzed that the main factor causing this situation is that after the SSA is added, only the requirement that the via 3 can be formed in the pattern is considered, and the situation that the SSA may cause the pattern to be widened is ignored. Therefore, further optimization after SSA is needed.

Based on this, the inventor proposes a graph optimization method, as shown in fig. 2, the graph optimization method of the present invention includes:

step S11, providing a graph to be optimized, wherein the graph to be optimized comprises a first graph and a second graph, the first graph and the second graph both have key graphs, and the key graphs of the second graph are correspondingly positioned between the key graphs of the first graph;

step S12 of performing selective size adjustment on the first graph and the second graph; and

and step S13, continuing to adjust the first graph and the second graph according to the key graph so as to improve the graph precision of the first graph and the second graph after exposure.

The graph optimization method of the present invention is described in detail below with reference to fig. 3 to 10.

Referring to fig. 3, for step S11, a to-be-optimized graph is provided, where the to-be-optimized graph includes a first graph 10 and a second graph 20, both of the first graph 10 and the second graph 20 have a key graph 30, and the key graph 30 of the second graph 20 is located between the key graphs 30 of the first graph 10.

As can be seen from fig. 3, due to the existence of the key pattern 30, a restriction may be caused between them, for example, the region shown by the dashed line box 31, and the adjacent sides of the first pattern 10 and the second pattern 20 may be affected by the existence of the key pattern 30 after exposure. Since the key patterns 30 of the first pattern 10 are located at two sides and the key pattern 30 of the second pattern 20 is located at the middle, the key pattern 30 of the second pattern 20 and a certain area 32 around the key pattern 30 are most affected, and this area 32 is a key portion 201, also called a hot area (Hotspot).

In one embodiment, the first pattern 10 and the second pattern 20 have a long shape, and the first pattern 10 and the second pattern 20 are arranged in parallel in a length direction.

The first pattern 10 and the second pattern 20 may be different in shape and size or may be the same, for example, fig. 4 shows a case where they are different in shape and size. Specifically, the first pattern 10 and the second pattern 20 may be rectangular, but the first pattern 10 is longer than the second pattern 20.

In one embodiment, the key pattern 30 is, for example, a via pattern, i.e., a pattern for forming a via, and it is understood that the key pattern 30 may also be other patterns, such as a gate pattern, etc.

For example, two key graphics 30 are included in the first graphic 10, and one key graphic 30 is included in the second graphic 20, the key graphic 30 of the second graphic 20 being located between the two key graphics 30 of the first graphic 10. It is understood that for the case of more key graphics, similar to this example in practice, for example, the case of the first graphic 10 with a plurality of key graphics 30 on the left side in fig. 3, can be treated as a whole, and those skilled in the art can know the operation method of more key graphics based on the present invention.

In detail, the first graphic 10 may include a first portion 101, a second portion 102 and a third portion 103 connected in sequence, the first portion 101 is opposite to the second graphic 20, the second portion 102 and the third portion 103 protrude from the second graphic 20, and the key graphic 30 is located in the first portion 101 and the third portion 103; the key feature 30 of the second pattern 20 and the region extending from the key feature 30 to both sides along the length direction of the second pattern 20 by a distance L1 of 40nm to 90nm are the key portion 201. In one embodiment of the invention, L1 is taken from the key pattern 30 to the end of the second pattern near the second portion 102, as is the case in FIG. 3. In other embodiments, this dimension L1 may be short of the end. Generally, the L1 is the minimum pitch at design, and L1 is not limited to the above-given numerical range depending on products.

In the present invention, the distance L1 extending from both sides of the key pattern 30 can be determined according to the actual product requirement and by combining the prior knowledge.

Referring to fig. 4, for step S12, a selective resizing (SSA) is performed on the first graph 10 and the second graph 20.

In one embodiment, the SSA comprises:

adding graphics on the side of the first graphics 10 and the second graphics 20 which are opposite;

adding graphics on the side of the third portion 103 facing the second graphics 20; and

pattern removal is performed in the second pattern 20 towards the side of the first pattern 10, except for the critical portion 201.

For example, in fig. 4, an additional pattern is added on a side where the first pattern 10 and the second pattern 20 are away from each other, and the size and shape of the additional pattern 40 are set according to the actual first pattern 10 and the actual second pattern 20 in combination with OPC rules. For example, a first rectangle 41 is added to the first pattern 10 corresponding to the first portion 101 and the second portion 102, and a plurality of second rectangles 42 are added to the first pattern 10 corresponding to the third portion 103, wherein the second rectangles 42 are gradually narrowed from the first rectangle 41, and have a maximum width smaller than the width of the first rectangle 41. Taking the example that the second rectangle 42 in fig. 4 includes 3, it can be seen that the widths h1, h2, h3, h4 of the first rectangle 41 and the second rectangle are shown in sequence, and there are h1 > h2 > h3 > h 4.

As shown in fig. 4, a third rectangle 43 is added to the side of the second pattern 20 facing away from the first pattern 10.

As shown in fig. 4, a fourth rectangle 44 is added to the third portion 103 on the side facing the second pattern 20.

As shown in fig. 4, the second pattern 20 is patterned to remove a fifth rectangle 45 except for the critical portion 201 toward the first pattern 10. The width of the fifth rectangle 45 is smaller than the width of the second rectangle 20.

The widths of the first rectangle 41, the second rectangle 42, the third rectangle 43 and the fourth rectangle 44 may be determined by combining the actual sizes of the first pattern 10 and the second pattern 20, the resolution of the exposure machine, and other factors.

Wherein, the pattern removal in the second pattern 20 is performed in consideration that the part of the removed pattern is far away from the key pattern 30, and the removal has a better effect on the key part 201; whereas, for example, the first portion 101 of the first pattern 10 is limited by its own key pattern 30 and the key pattern 30 of the second pattern 20, respectively, removal may adversely affect the accuracy of the post-exposure key portion 201.

Then, referring to fig. 5, for step S13, the first pattern 10 and the second pattern 20 are continuously adjusted according to the key pattern 30, so as to improve the pattern precision of the first pattern 10 and the second pattern 20 after exposure. The method specifically comprises the following steps: removing a first truncated pattern 51 from the pattern added in the first pattern 10, wherein the first truncated pattern 51 faces and is away from the first portion 101 and the second portion 102; and

a second truncated graphic 52 is removed from the graphics added in the second graphic 20, and the second truncated graphic 52 faces and is away from the critical section 201.

In one embodiment, the first and second deletion patterns 51 and 52 are rectangular and have the same width.

Note that the width of the first and second deletion patterns 51 and 52 is D, the width of the second pattern 20 after pattern addition is W, and the distance between the first and second patterns 10 and 20 is S, then D is proportional to W-S. One can write D ═ k (W-S), where k is a constant.

In one embodiment, k is related to the deviation tolerance (PV), which may be set, for example, in combination with the deviation tolerance of dense areas and the deviation tolerance of normal areas.

Then, referring to fig. 6, the first graph 10 and the second graph 20 are merged with the respective added graphs (e.g., the first rectangle 41, the second rectangle 42, the third rectangle 43, and the fourth rectangle 44), the removed graph (e.g., the fifth rectangle 45), and the pruned graphs (e.g., the first pruned graph 51 and the second pruned graph 52), respectively, to obtain an optimized first graph 60 and an optimized second graph 70.

Therefore, after the SSA, the adjustment is continuously carried out according to the key graph, and the adverse effect on the first graph 10 and/or the second graph 20 after the SSA is introduced can be better corrected, so that the influence of the selective size adjustment on the actual graph is more reasonable, and the accuracy of the graph with the key graph 30 is improved.

The case where the lengths of the first pattern 10 and the second pattern 20 are different is described above, and the case where the lengths of the first pattern 10 and the second pattern 20 are the same will be explained below.

Referring to fig. 7, for step S11, a to-be-optimized graph is provided, where the to-be-optimized graph includes a first graph 100 and a second graph 200, both of the first graph 100 and the second graph 200 have a key graph 300, and the key graph 300 of the second graph 200 is located between the key graphs 300 of the first graph 100.

As can be seen from fig. 7, due to the existence of the key pattern 300, a restriction may be generated between them, for example, the region shown by the dashed line box 310, and the adjacent sides of the first pattern 100 and the second pattern 200 may be affected by the existence of the key pattern 300 after exposure. Since the key patterns 300 of the first pattern 100 are located at two sides and the key pattern 300 of the second pattern 200 is located at the middle, the key pattern 300 of the second pattern 200 and a certain area 320 around the key pattern 300 are most affected, and this area 320 is a key portion 2001, also called a hot area (Hotspot).

In one embodiment, the first pattern 100 and the second pattern 200 have a long shape, and the first pattern 100 and the second pattern 200 are arranged in parallel in a length direction.

Specifically, the first pattern 100 and the second pattern 200 may be rectangular, and the length of the first pattern 10 is equal to the length of the second pattern 20, for example, the length and the width of the first pattern 100 and the second pattern 200 are the same.

In one embodiment, the key pattern 300 is, for example, a via pattern, i.e., a pattern for forming a via, and it is understood that the key pattern 300 may also be other patterns, such as a gate pattern, etc.

For example, two key graphics 300 are included in the first graphic 100, and one key graphic 300 is included in the second graphic 200, and the key graphic 300 of the second graphic 200 is located between the two key graphics 300 of the first graphic 100. It is understood that for the case of more key graphics, similar to this example in practice, for example, the case of the first graphic 100 with a plurality of key graphics 300 on the left side in fig. 7, can be treated as a whole, and those skilled in the art can know the operation method of more key graphics based on the present invention.

The key portion 2001 is the key pattern 300 in the second pattern 200 and a region extending from the key pattern 300 to both sides along the length direction of the second pattern 200 by a distance L2 of 40nm to 90 nm. In one embodiment of the present invention, L2 is smaller than the distance between two adjacent key graphics 300 in the first graphic 100 and the second graphic 200, i.e., as in the case shown in fig. 7. Generally, the L2 is the minimum pitch at design, and L1 is not limited to the above-given numerical range depending on products.

In the present invention, the distance L2 extending from both sides of the key pattern 300 can be determined according to the actual product requirement and by combining the prior knowledge.

Referring to fig. 8, for step S12, a selective resizing (SSA) is performed on the first graph 100 and the second graph 200.

In one embodiment, the SSA comprises:

adding graphics on the side of the first graphic 100 and the second graphic 200 which are opposite; and

pattern removal is performed in the second pattern 200 toward the side of the first pattern 100 except for the key portion 2001.

For example, in fig. 8, an additional pattern is added to a side where the first pattern 100 and the second pattern 200 are away from each other, and the size and shape of the additional pattern are set according to the actual first pattern 100 and the second pattern 200 in combination with OPC rules. For example, a first rectangle 410 and a second rectangle 420 are added, respectively. In one embodiment, the first rectangle 410 and the second rectangle 420 are the same.

The widths of the first rectangle 410 and the second rectangle 420 may be determined by combining the sizes of the actual first pattern 100 and the actual second pattern 200, the resolution of the exposure machine, and other factors.

As shown in fig. 8, in the second pattern 200, pattern removal is performed toward one side of the first pattern 100 except for the key portion 2001, for example, a third rectangle 430 may be removed on both sides of the key portion 2001. The width of the third rectangle 430 is less than the width of the second rectangle 200.

The pattern removal in the second pattern 200 is performed in consideration that the part of the removed pattern is far from the key pattern 300, and the removal has a better effect on the key part 2001; for example, the first pattern 100 is limited by its own key pattern 300 and the key pattern 300 of the second pattern 200, and the removal may adversely affect the accuracy of the exposed key portion 2001.

Then, referring to fig. 9, for step S13, the first pattern 100 and the second pattern 200 are continuously adjusted according to the key pattern 300, so as to improve the pattern precision of the first pattern 100 and the second pattern 200 after exposure. The method specifically comprises the following steps: removing a first truncated graphic 510 from the graphics added to the first graphic 100, wherein the first truncated graphic 510 faces and is away from the first graphic 100; and

a second truncated graphic 520 is removed from the graphics added in the second graphic 200, and the second truncated graphic 520 faces and is away from the critical section 2001.

In one embodiment, the first and second puncturing patterns 510 and 520 are rectangular and have the same width.

Note that the widths of the first and second deletion patterns 510 and 520 are D, the width of the second pattern 200 after pattern addition is W, and the distance between the first and second patterns 100 and 200 is S, then D is proportional to W-S. One can write D ═ k (W-S), where k is a constant.

In one embodiment, k is related to the deviation tolerance (PV), which may be set, for example, in combination with the deviation tolerance of dense areas and the deviation tolerance of normal areas.

Then, referring to fig. 10, the first graph 100 and the second graph 200 are merged with the respective added graphs (e.g., the first rectangle 410, the second rectangle 420), the removed graph (e.g., the third rectangle 430), and the subtracted graphs (e.g., the first subtracted graph 510 and the second subtracted graph 520), respectively, to obtain the optimized first graph 600 and the optimized second graph 700.

Therefore, after the SSA, the adjustment is continuously carried out according to the key graph, and the adverse effect on the first graph 100 and/or the second graph 200 after the SSA is introduced can be better corrected, so that the influence of the selective size adjustment on the actual graph is more reasonable, and the accuracy of the graph with the key graph 300 is improved.

Based on the above, the invention also provides a mask manufacturing method, which utilizes the pattern optimization method.

In summary, in the graph optimization method provided by the present invention, the graph optimization method includes: providing a graph to be optimized, wherein the graph to be optimized comprises a first graph and a second graph, the first graph and the second graph are provided with key graphs, and the key graphs of the second graph are correspondingly positioned between the key graphs of the first graph; selectively resizing the first graphic and the second graphic; and continuously adjusting the first graph and the second graph according to the key graph so as to improve the graph precision of the first graph and the second graph after exposure. Therefore, after the selective size adjustment is carried out, the adjustment is continuously carried out according to the key graph, so that the influence of the selective size adjustment on the actual graph is more reasonable, and the improvement of the precision of the graph with the key graph is facilitated. The mask plate manufactured by the method can effectively improve the quality of the mask plate.

It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.