阅读说明：本技术 一种三维堆叠射频光模块制作方法 (three-dimensional stacking radio frequency optical module manufacturing method ) 是由 郁发新 冯光建 王志宇 张兵 周琪 于 2019-09-24 设计创作，主要内容包括：本发明公开了一种三维堆叠射频光模块制作方法,具体包括如下步骤：101)射频转接板制作步骤、102)散热转接板制作步骤、103)多层键合步骤、104)封盖转接板制作步骤、105)芯片联通步骤、106)模组键合步骤；本发明通过多层堆叠工艺把面积较大的芯片上下放置,通过TSV工艺把芯片的电信号引出,然后在模组的顶部设置光电芯片,把射频信号通过光信号的方式传出或者接入,这样可以大大增加光模块的集成度的一种三维堆叠射频光模块制作方法。(The invention discloses a manufacturing method of three-dimensional stacked radio frequency optical modules, which specifically comprises the following steps of 101) manufacturing a radio frequency adapter plate, 102) manufacturing a heat dissipation adapter plate, 103) multi-layer bonding, 104) manufacturing a cover adapter plate, 105) chip communication, and 106) module bonding, wherein the chips with larger areas are placed up and down through a multi-layer stacking process, electric signals of the chips are led out through a TSV process, then photoelectric chips are arranged at the tops of the modules, and radio frequency signals are transmitted or accessed in a mode of optical signals, so that the integration level of the optical modules can be greatly increased through three-dimensional stacked radio frequency optical modules.)

The manufacturing method of the three-dimensional stacked radio frequency optical modules is characterized by comprising the following steps:

101) the radio frequency adapter plate manufacturing step: through photoetching and etching processes, TSV holes are formed in the upper surface of the radio frequency adapter plate; depositing silicon oxide or silicon nitride on the upper surface of the radio frequency adapter plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; electroplating metal to fill the TSV hole with the metal, densifying the metal at the temperature of 200-500 ℃, and removing the metal on the surface of the radio frequency adapter plate by using a CMP (chemical mechanical polishing) process to only leave the filled metal;

manufacturing a cavity for placing a radio frequency chip in the middle area of the upper surface of the radio frequency adapter plate by photoetching, dry etching or wet etching, and welding the radio frequency chip in the cavity by welding or gluing; manufacturing an RDL on the upper surface of the radio frequency adapter plate;

thinning the lower surface of the radio frequency adapter plate to a thickness of between 10 and 700 mu m, exposing the end of the TSV hole, depositing silicon oxide or silicon nitride on the lower surface of the radio frequency adapter plate to generate an insulating layer, and exposing the end of the TSV hole on the surface of the insulating layer by a CMP (chemical mechanical polishing) process;

102) the manufacturing steps of the heat dissipation adapter plate are as follows: manufacturing TSV holes in the upper surface of the radiator adapter plate through photoetching and etching processes; depositing silicon oxide or silicon nitride on the upper surface of the adapter plate of the radiator, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; electroplating metal to fill the TSV hole with the metal, densifying the metal at the temperature of 200-500 ℃, and removing the metal on the surface of the radio frequency adapter plate by using a CMP (chemical mechanical polishing) process to only leave the filled metal; manufacturing a bonding metal forming bonding pad on the upper surface of the adapter plate of the radiator by photoetching and electroplating processes;

the method comprises the steps of manufacturing a micro-channel groove in the middle area of the upper surface of a radiator adapter plate through a photoetching, dry method or wet method etching process, thinning the lower surface of the radiator adapter plate through a grinding and etching process, controlling the thinning thickness to be between 10 and 700 mu m, exposing the end of a TSV hole, generating an insulating layer on the lower surface of the radiator adapter plate through deposited silicon oxide or silicon nitride, and exposing the end of the TSV hole on the surface of the insulating layer through a CMP process;

103) multilayer bonding step: bonding the radio frequency adapter plate and the heat dissipation adapter plate through a wafer-level bonding process to obtain a radio frequency chip module, wherein the bonding temperature is controlled between 100 and 350 ℃;

104) the manufacturing method of the cover adapter plate comprises the steps of manufacturing a TSV hole and an RDL on the upper surface of the upper plate through the cover adapter plate comprising an upper plate and a lower plate, manufacturing a cover chip groove on the lower surface of the upper plate through photoetching and etching processes, thinning the lower surface of the upper plate to the thickness of 10-700 mu m to expose ends of the TSV hole, generating an insulating layer on the lower surface of the upper plate through silicon oxide or silicon nitride deposition, and exposing ends of the TSV hole on the surface of the insulating layer through a CMP process;

thinning the lower surface of the lower plate to a thickness of between 10 and 700 mu m so as to expose ends of the TSV holes, generating an insulating layer on the lower surface of the lower plate by depositing silicon oxide or silicon nitride, and exposing ends of the TSV holes on the surface of the insulating layer by a CMP (chemical mechanical polishing) process;

welding a functional chip on the upper surface of the lower plate at a position corresponding to the sealing cover chip groove of the upper plate by an FC (fiber channel) process, welding the upper plate and the lower plate, and sealing the functional chip in the sealing cover chip groove;

105) chip communication: fixing the photoelectric conversion chip and the radio frequency antenna on the surface of the seal cover adapter plate through a welding process, and interconnecting the photoelectric conversion chip and the functional chip through a routing process to form an optical transmission chip module;

106) module bonding step: respectively cutting the optical transmission chip module and the radio frequency chip module to obtain a single optical transmission module and a single radio frequency module, interconnecting the optical transmission module and the radio frequency module through a welding process, welding the optical transmission module and the radio frequency module on a PCB, and arranging an optical fiber module to obtain a radio frequency optical module structure with optical signal processing capability.

2. The manufacturing method of the kinds of three-dimensional stacked radio frequency optical modules according to claim 1, wherein the RDL manufacturing process includes RDL routing and bonding PADs, an insulating layer is manufactured by depositing silicon oxide or silicon nitride, a chip PAD is exposed by photoetching and dry etching, RDL routing layout is performed by photoetching and electroplating processes, wherein the RDL routing adopts or a mixture of copper, aluminum, nickel, silver, gold and tin, the structure of the RDL routing adopts a layer or multilayer structure, the thickness range is 10nm to 1000um, bonding metals are manufactured by photoetching and electroplating processes to form the bonding PADs, and the opening diameter of the bonding PADs is 10um to 10000 um.

3. The method for manufacturing three-dimensional stacked radio frequency optical modules according to claim 2, wherein an insulating layer is further covered on the surface of the RDL, and the bonding pads are exposed through a windowing process.

4. The method for manufacturing the three-dimensional stacked radio frequency optical module as claimed in claim 2, wherein the diameter of the TSV hole ranges from 1um to 1000um, and the depth ranges from 10um to 1000um, the seed layer structure is a layer or multilayer structure, the thickness ranges from 1nm to 100um, the material is or a mixture of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, the thickness of the insulating layer ranges from 10nm to 1000um, the thickness of the plating metal ranges from 1nm to 100um, the metal structure is a layer or multilayer structure, the material is a or a mixture of titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and gallium, the depth of the cavity ranges from 10um to 700um, and the length of the cavity ranges from 100um to 10 mm.

5. The method for manufacturing three-dimensional stacked radio frequency optical modules according to claim 1, wherein the radio frequency interposer is of 4, 6, 8, 12 inch wafers, the thickness of the radio frequency interposer ranges from 200um to 2000um, and the radio frequency interposer is made of glass, quartz, silicon carbide, aluminum oxide, epoxy resin or polyurethane.

6. The manufacturing method of kinds of three-dimensional stacked RF optical modules according to claim 5, wherein the depth of the micro-channel groove ranges from 10um to 700um, the length of the groove ranges from 100um to 10mm, the depth of the micro-channel through hole ranges from 10um to 700um, and the diameter ranges from 10um to 10 mm.

7. The method for manufacturing the kinds of three-dimensional stacked radio frequency optical modules according to claim 1, wherein a radio frequency interposer or a heat dissipation interposer is manufactured by repeating step 101) or step 102), and stacked and bonded by step 103) to form a three-dimensional module with a multi-layer radio frequency structure.

Technical Field

The invention relates to the technical field of semiconductors, in particular to a manufacturing method of three-dimensional stacked radio frequency optical modules.

Background

Generally, loads carried by satellites include phased array radars, high-definition cameras, inertial navigation and various sensors, the requirement for the speed of data transmission is gradually increased along with the gradual improvement of the load performance, and the optical fiber module data transmission becomes a good substitute for high-frequency cables in data transmission due to the advantages of light weight, good electromagnetic shielding property, large communication capacity, easiness in multiplexing and integration and the like.

However, since the rf chip is an analog chip, the area cannot be reduced by times, and thus, when the rf optical module is used, the overall area of the module is increased due to the large occupied area of the rf chip, which is not favorable for multi-channel integration.

Disclosure of Invention

The invention overcomes the defects of the prior art and provides methods for manufacturing the three-dimensional stacking radio frequency optical module.

The technical scheme of the invention is as follows:

A three-dimensional stacking radio frequency optical module manufacturing method specifically comprises the following steps:

101) the radio frequency adapter plate manufacturing step: through photoetching and etching processes, TSV holes are formed in the upper surface of the radio frequency adapter plate; depositing silicon oxide or silicon nitride on the upper surface of the radio frequency adapter plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; electroplating metal to fill the TSV hole with the metal, densifying the metal at the temperature of 200-500 ℃, and removing the metal on the surface of the radio frequency adapter plate by using a CMP (chemical mechanical polishing) process to only leave the filled metal;

manufacturing a cavity for placing a radio frequency chip in the middle area of the upper surface of the radio frequency adapter plate by photoetching, dry etching or wet etching, and welding the radio frequency chip in the cavity by welding or gluing; manufacturing an RDL on the upper surface of the radio frequency adapter plate;

thinning the lower surface of the radio frequency adapter plate to a thickness of between 10 and 700 mu m, exposing the end of the TSV hole, depositing silicon oxide or silicon nitride on the lower surface of the radio frequency adapter plate to generate an insulating layer, and exposing the end of the TSV hole on the surface of the insulating layer by a CMP (chemical mechanical polishing) process;

102) the manufacturing steps of the heat dissipation adapter plate are as follows: manufacturing TSV holes in the upper surface of the radiator adapter plate through photoetching and etching processes; depositing silicon oxide or silicon nitride on the upper surface of the adapter plate of the radiator, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; electroplating metal to fill the TSV hole with the metal, densifying the metal at the temperature of 200-500 ℃, and removing the metal on the surface of the radio frequency adapter plate by using a CMP (chemical mechanical polishing) process to only leave the filled metal; manufacturing a bonding metal forming bonding pad on the upper surface of the adapter plate of the radiator by photoetching and electroplating processes;

the method comprises the steps of manufacturing a micro-channel groove in the middle area of the upper surface of a radiator adapter plate through a photoetching, dry method or wet method etching process, thinning the lower surface of the radiator adapter plate through a grinding and etching process, controlling the thinning thickness to be between 10 and 700 mu m, exposing the end of a TSV hole, generating an insulating layer on the lower surface of the radiator adapter plate through deposited silicon oxide or silicon nitride, and exposing the end of the TSV hole on the surface of the insulating layer through a CMP process;

103) multilayer bonding step: bonding the radio frequency adapter plate and the heat dissipation adapter plate through a wafer-level bonding process to obtain a radio frequency chip module, wherein the bonding temperature is controlled between 100 and 350 ℃;

104) the manufacturing method of the cover adapter plate comprises the steps of manufacturing a TSV hole and an RDL on the upper surface of the upper plate through the cover adapter plate comprising an upper plate and a lower plate, manufacturing a cover chip groove on the lower surface of the upper plate through photoetching and etching processes, thinning the lower surface of the upper plate to the thickness of 10-700 mu m to expose ends of the TSV hole, generating an insulating layer on the lower surface of the upper plate through silicon oxide or silicon nitride deposition, and exposing ends of the TSV hole on the surface of the insulating layer through a CMP process;

thinning the lower surface of the lower plate to a thickness of between 10 and 700 mu m so as to expose ends of the TSV holes, generating an insulating layer on the lower surface of the lower plate by depositing silicon oxide or silicon nitride, and exposing ends of the TSV holes on the surface of the insulating layer by a CMP (chemical mechanical polishing) process;

welding a functional chip on the upper surface of the lower plate at a position corresponding to the sealing cover chip groove of the upper plate by an FC (fiber channel) process, welding the upper plate and the lower plate, and sealing the functional chip in the sealing cover chip groove;

105) chip communication: fixing the photoelectric conversion chip and the radio frequency antenna on the surface of the seal cover adapter plate through a welding process, and interconnecting the photoelectric conversion chip and the functional chip through a routing process to form an optical transmission chip module;

106) module bonding step: respectively cutting the optical transmission chip module and the radio frequency chip module to obtain a single optical transmission module and a single radio frequency module, interconnecting the optical transmission module and the radio frequency module through a welding process, welding the optical transmission module and the radio frequency module on a PCB, and arranging an optical fiber module to obtain a radio frequency optical module structure with optical signal processing capability.

, the RDL manufacturing process comprises RDL routing and a PAD, an insulating layer is manufactured by depositing silicon oxide or silicon nitride, a chip PAD is exposed by photoetching and dry etching, RDL routing arrangement is performed by photoetching and electroplating processes, wherein the RDL routing adopts or a mixture of copper, aluminum, nickel, silver, gold and tin, the RDL routing adopts a layer or multilayer structure, the thickness range is 10nm to 1000um, bonding metal is manufactured by photoetching and electroplating processes to form the PAD, and the window diameter of the PAD is 10um to 10000 um.

, covering an insulating layer on the surface of the RDL and exposing the pad through a windowing process.

, the diameter range of TSV hole is 1um to 1000um, the depth is 10um to 1000um, the seed layer structure is layer or multilayer structure, the thickness range is 1nm to 100um, the material is or a mixture of a plurality of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, the thickness range of insulating layer is 10nm to 1000um, the thickness range of electroplating metal is 1nm to 100um, the metal structure is layer or multilayer structure, the material is or a mixture of a plurality of titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and gallium metal alloy, the depth range of cavity is 10um to 700um, and the length range of cavity is 100um to 10 mm.

, the radio frequency adapter plate adopts of 4, 6, 8 and 12 inch wafers, the thickness range is 200um to 2000um, and the material is glass, quartz, silicon carbide, alumina, epoxy resin or polyurethane.

, the depth of the groove is 10um to 700um, the length of the groove is 100um to 10mm, the depth of the through hole is 10um to 700um, and the diameter is 10um to 10 mm.

, manufacturing the radio frequency adapter plate or the heat dissipation adapter plate by repeating the step 101) or the step 102), and stacking and bonding the radio frequency adapter plate or the heat dissipation adapter plate to form the three-dimensional module of the multilayer radio frequency structure by the step 103).

Compared with the prior art, the invention has the advantages that: according to the invention, the chip with a larger area is vertically arranged through a multilayer stacking process, the electric signal of the chip is led out through the TSV process, then the photoelectric chip is arranged at the top of the module, and the radio frequency signal is transmitted or accessed in an optical signal mode, so that the integration level of the optical module can be greatly increased.

Drawings

FIG. 1 is a schematic view of a radio frequency adapter plate according to the present invention;

FIG. 2 is a schematic view of a closure adaptor plate of the present invention;

FIG. 3 is a schematic diagram of an optical transmission chip module and an RF chip module according to the present invention;

FIG. 4 is a schematic structural view of the present invention;

FIG. 5 is a schematic diagram of a side-welded RF antenna according to the present invention;

FIG. 6 is a second structural diagram of the present invention.

The labels in the figure are: the structure comprises a radio frequency adapter plate 101, TSV holes 102, an RDL103, a radio frequency chip 104, a micro channel groove 105, a micro channel through hole 106, a heat dissipation adapter plate 107, a cover adapter plate 108, an upper plate 109, a lower plate 110, a cover chip groove 111, a functional chip 112, a radio frequency antenna 113, an optical fiber module 114 and a support module 115.

Detailed Description

Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements of similar function throughout. The embodiments described below with reference to the drawings are exemplary only, and are not intended as limitations on the present invention.

It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein by .

Reference numerals in the various embodiments are provided for steps of the description only and are not necessarily associated in a substantially sequential manner. Different steps in each embodiment can be combined in different sequences, so that the purpose of the invention is achieved.

The invention is further described in conjunction with the figures and the detailed description.